CN202076296U - Back touch type HIT (heterojunction with intrinsic thin layer) solar battery structure based on N type silicon wafer - Google Patents
Back touch type HIT (heterojunction with intrinsic thin layer) solar battery structure based on N type silicon wafer Download PDFInfo
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- CN202076296U CN202076296U CN 201120107672 CN201120107672U CN202076296U CN 202076296 U CN202076296 U CN 202076296U CN 201120107672 CN201120107672 CN 201120107672 CN 201120107672 U CN201120107672 U CN 201120107672U CN 202076296 U CN202076296 U CN 202076296U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 83
- 239000010703 silicon Substances 0.000 title claims abstract description 83
- 238000007639 printing Methods 0.000 claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 30
- 239000002002 slurry Substances 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000006117 anti-reflective coating Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to a solar battery structure, and specifically to a back touch type HIT (heterojunction with intrinsic thin layer) solar battery structure based on an N type silicon wafer. In the utility model, a conventional crystal silicon battery is combined with a thin film solar battery; the structure does not have the photoinduced attenuation phenomenon of a crystal silicon solar battery; the propagation optical length of solar light in the battery is longer; compared with the conventional crystal silicon solar battery, the battery is greatly reduced in thickness; an electrode is completely printed on the back surface of the battery; not only is the problem that an electrode on the front surface of the conventional solar battery shields light solved, but also the requirements on the printing precision and the height-to-width ratio of the electrode is decreased; the efficiency of the crystal silicon solar battery can be improved; and the back touch type HIT solar battery structure based on the N type silicon wafer is applicable to industrial production.
Description
Technical field
The utility model relates to a kind of solar battery structure, is specifically related to a kind of back-contact HIT solar battery structure based on N type silicon chip.
Background technology
A kind of technological process of the demand that develops rapidly of solar energy industry is simple, and the industrialization technology that electricity conversion is high reduces cost of electricity-generating, reach with civil power with valency or be lower than the target of civil power electricity price.
Current conventional crystal silicon battery is along with the development of industrialization, and conversion efficiency promotes and the cost reduction has all had bigger progress.But the technical characterstic of conventional crystal silicon battery own has limited the further reduction of its cost of electricity-generating, is difficult to reach the target of civil power with valency.Multiple solution has appearred in industry, comprises selective emitter solar battery, back contact solar battery, HIT battery etc.With stylish technology, also promote and cost reduces that provide may for the further conversion efficiency of solar cell as the appearance of laser technology, LIP technology, photoetching technique etc.
At present in various efficient solar batteries, back of the body contact battery and HIT battery are solutions very effectively.Back of the body contact battery improves the light utilization efficiency of solar cell, makes efficient that tremendous increase arranged.But it has adopted laser technology more, and cost is higher and production capacity is less.The HIT battery has reduced cell thickness and the more conventional crystal silicon battery of efficient has had raising, but it is still at battery front side printed silver electrode, and the problem of shading rate does not solve.
Summary of the invention
The purpose of this utility model is exactly to provide a kind of back-contact HIT solar battery structure based on N type silicon chip at the defective of above-mentioned existence, and crystal silicon solar batteries photo attenuation phenomenon can not appear in this structure; Sunlight is propagated light path in battery longer, and the more conventional crystal silicon solar battery thickness of battery is attenuate greatly; Electrode all is printed on cell backside, has promptly avoided the problem of conventional front electrode of solar battery shading, has reduced the requirement to electrode printing precision and depth-width ratio again, can improve the efficient of crystal silicon solar energy battery, is applicable to industrialization production.
The technical solution adopted in the utility model is a kind of back-contact HIT solar battery structure based on N type silicon chip, and the N type silicon chip front surface after making herbs into wool has one deck high concentration N+ type amorphous silicon membrane and one deck silicon nitride antireflective coating; N type silicon chip back of the body surface is divided into N type zone and p type island region territory, and wherein N type zone is a N type silicon chip matrix; The substrate of p type island region territory is a N type silicon chip, is followed successively by one deck intrinsic amorphous silicon thin layer and one deck P type amorphous silicon thin layer on the N type silicon chip, covers one deck SiO in N type zone and p type island region field surface
2Thin layer; Carrying on the back surperficial N type zone and p type island region territory difference printing conductive slurry as N region electrode and P region electrode.
One deck high concentration N+ type amorphous silicon membrane of N type silicon chip front surface, the film thickness scope is 1 ~ 50000nm.
One deck silicon nitride antireflective coating thickness of N type silicon chip front surface is 75 ~ 85nm, and refractive index is 2.0 ~ 2.2.
N type silicon chip is carried on the back one deck intrinsic amorphous silicon thin layer in surperficial p type island region territory, and the film thickness scope is 1 ~ 50000nm; One deck P type amorphous silicon thin layer, the film thickness scope is 1 ~ 50000nm.
One deck SiO on N type silicon chip back side N type zone and p type island region territory
2Thin layer is as backside passivation layer, SiO
2Thickness of thin layer is at 1 ~ 50000nm.
The silk screen printing electrocondution slurry is as electrode respectively in the N type zone on N type silicon chip back of the body surface and p type island region territory, and the electrode printing material that adopts on the N type zone is starched for silver; The electrode printing material that adopts on the p type island region territory is silver slurry, silver-colored aluminium paste, or the similar conventional rear surface of solar cell silver aluminium structure of joining is a kind of.
The beneficial effects of the utility model are: a kind of back-contact HIT solar battery structure based on N type silicon chip, the N type silicon chip front surface deposition one deck high concentration N+ type amorphous silicon membrane after making herbs into wool; Deposit one deck intrinsic amorphous silicon thin layer and one deck P type amorphous silicon thin layer successively on back of the body surface; Adopt silk screen printing sintering processing deposition SiO on silicon chip back of the body surface
2As mask, the mode that adopts silk screen printing is SiO
2Slurry is printed on the silicon chip back side, and the method that sintering forms mask makes the more accurate and easy control of mask shape; At silicon chip front surface grown silicon nitride antireflection layer; Use the surperficial mask of the strong base solution corrosion back of the body not the shield zone until exposing N type silicon substrate; Use HF sour eating away SiO
2Mask is to expose P type amorphous silicon; At silicon chip backside deposition one deck SiO
2Thin layer is as backside passivation layer and reflecting surface; Distinguish in the N type zone on back of the body surface and p type island region territory the silk screen printing electrocondution slurry through sintering as N region electrode and P region electrode.Crystal silicon solar batteries photo attenuation phenomenon can not appear in the solar cell of this structure; Sunlight is propagated light path in battery longer, and the more conventional crystal silicon solar battery thickness of battery is attenuate greatly; Electrode all is printed on cell backside, has promptly avoided the problem of conventional front electrode of solar battery shading, has reduced the requirement to electrode printing precision and depth-width ratio again; In assembly production, use this battery can reduce welding sequence, save welding, reduce the assembly production cost.The utility model is with conventional crystal silicon battery and thin-film solar cells combination, and method is simple, industrialization rapidly.
Description of drawings:
Figure 1 shows that battery structure schematic diagram in the utility model;
Figure 2 shows that the schematic diagram of the masked areas of cell backside in the utility model embodiment 1 and 2;
Figure 3 shows that backplate structural representation in the utility model embodiment 1 and 2.
Among the figure, 1. N type silicon chip, 2. N+ amorphous silicon membrane, 3. intrinsic amorphous silicon thin layer, 4. P type amorphous silicon thin layer, 5. silicon nitride antireflective coating, 6. SiO
2Thin layer, 7. N region electrode, 8. P region electrode, 9. SiO
2Mask.
Embodiment:
In order to understand the utility model better, below in conjunction with accompanying drawing and example the technical solution of the utility model is described, but the utility model is not limited thereto.
The technical solution adopted in the utility model is a kind of back-contact HIT solar battery structure based on N type silicon chip, comprises N type silicon chip 1, and N type silicon chip 1 front surface after making herbs into wool has one deck high concentration N+ type amorphous silicon membrane 2 and one deck silicon nitride antireflective coating 5; N type silicon chip 1 back of the body surface is divided into N type zone and p type island region territory, and wherein N type zone is N type silicon chip 1 matrix; The substrate of p type island region territory is a N type silicon chip 1, is followed successively by one deck intrinsic amorphous silicon thin layer 3 and one deck P type amorphous silicon thin layer 4 on the N type silicon chip 1, covers one deck SiO at silicon chip back side N mold base 1 and p type island region field surface
2 Thin layer 6 is as backside passivation layer and reflecting surface; Carrying on the back surperficial N type zone and the difference printing conductive slurry conduct of p type island region territory as N region electrode 7 and P region electrode 8.
Embodiment 1:
Select the n type single crystal silicon sheet; N type silicon chip 1 carries out surperficial alkali making herbs into wool through conventional cleaning, so that remove the mechanical damage layer of silicon chip surface, remove surface and oil contaminant and metal impurities, form the matte of pyramid pattern, increase absorption sunlight, increase the PN junction area, improve short circuit current.Adopt the front surface deposition one deck highly doped N+ type amorphous silicon thin layer 2 of amorphous silicon filming equipment at N type silicon chip 1, the film thickness is 50nm, deposit one deck intrinsic amorphous silicon thin layer 3 successively on N type silicon chip 1 back of the body surface then, film thickness is 1nm and one deck P type amorphous silicon thin layer 4, and film thickness is 150nm.On the silk screen printing board, according to mask pattern shown in Figure of description Fig. 2, SiO on N type silicon chip 1 back of the body surface printing
2Slurry becomes SiO behind the sintering
2Mask 9.Under 400 ℃, adopting pecvd process is that the plasma enhanced chemical vapor deposition method deposits the thick silicon nitride antireflective coating 5 of 70 ~ 80nm at N type silicon chip 1 front surface, and reacting gas is silane and ammonia.Then silicon chip being placed concentration is 20% NaOH solution, under 85 ℃ with SiO
2Mask 9 unlapped amorphous silicons are removed, and expose the N type silicon substrate on back of the body surface.Be with SiO in 15% the HF acid solution in concentration then
2Mask 9 is removed.Adopt APCVD or PECVD board at the very thin SiO of silicon chip back of the body surface deposition one deck
2 Thin layer 6, thickness of thin layer are 30nm, as backside passivation layer and reflecting surface.Accompanying drawing pattern shown in Figure 3 is being carried on the back surperficial N type zone and the difference printing conductive slurry conduct of p type island region territory as N region electrode 7 and P region electrode 8 to specifications at last, and the electrode printing material that adopts on the N type zone is silver-colored slurry; The electrode printing material that adopts on the p type island region territory is silver slurry, silver-colored aluminium paste, or the similar conventional rear surface of solar cell silver aluminium structure of joining is a kind of, forms the back-contact HIT solar cell based on N type silicon chip of the present utility model behind the sintering.
Embodiment 2:
Select N type polysilicon chip; N type silicon chip 1 carries out surface acid making herbs into wool through conventional cleaning, so that remove the mechanical damage layer of silicon chip surface, removes surface and oil contaminant and metal impurities, forms the matte that rises and falls, and increases the absorption to sunlight, increases the PN junction area, improves short circuit current.Adopt the upper surface deposition one deck highly doped N+ type amorphous silicon thin layer 2 of amorphous silicon filming equipment at N type silicon chip 1, the film thickness is 50nm, deposit one deck intrinsic amorphous silicon thin layer 3 successively on N type silicon chip 1 back of the body surface then, film thickness is 1nm, with one deck P type amorphous silicon thin layer 4, film thickness is 150nm.On the silk screen printing board,, on N type silicon chip 1 back of the body surface, print SiO according to mask pattern shown in Figure of description Fig. 2
2Slurry becomes SiO behind the sintering
2Mask 9.Under 400 ℃, adopting pecvd process is that the plasma enhanced chemical vapor deposition method deposits the thick silicon nitride antireflection layer 5 of 70 ~ 80nm at N type silicon chip 1 front surface, and reacting gas is silane and ammonia.Then silicon chip being placed concentration is 20% NaOH solution, under 85 ℃ with SiO
2Mask 9 unlapped amorphous silicons are removed, and expose the N type silicon substrate on back of the body surface.Be with SiO in 15% the HF acid solution in concentration then
2Mask 9 is removed.Adopt APCVD or PECVD board at the very thin SiO of silicon chip lower surface deposition one deck
2 Thin layer 6, thickness of thin layer is 30nm, as backside passivation layer.Accompanying drawing pattern shown in Figure 3 is being carried on the back surperficial N type zone and the difference printing conductive slurry conduct of p type island region territory as N region electrode 7 and P region electrode 8 to specifications at last, and the electrode printing material that adopts on the N type zone is silver-colored slurry; The electrode printing material that adopts on the p type island region territory is silver slurry, silver-colored aluminium paste, or the similar conventional rear surface of solar cell silver aluminium structure of joining is a kind of, forms the back-contact HIT solar cell based on N type silicon chip of the present utility model behind the sintering.
Claims (6)
1. the back-contact HIT solar battery structure based on N type silicon chip comprises N type silicon chip, it is characterized in that, the N type silicon chip front surface after making herbs into wool has one deck high concentration N+ type amorphous silicon membrane and one deck silicon nitride antireflective coating; N type silicon chip back of the body surface is divided into N type zone and p type island region territory, and wherein N type zone is a N type silicon chip matrix; The substrate of p type island region territory is a N type silicon chip, is followed successively by one deck intrinsic amorphous silicon thin layer and one deck P type amorphous silicon thin layer on the N type silicon chip, covers one deck SiO in N type zone and p type island region field surface
2Thin layer; Carrying on the back surperficial N type zone and p type island region territory difference printing conductive slurry as N region electrode and P region electrode.
2. a kind of back-contact HIT solar battery structure based on N type silicon chip according to claim 1 is characterized in that: one deck high concentration N+ type amorphous silicon membrane of N type silicon chip front surface, the film thickness scope is 1 ~ 50000nm.
3. a kind of back-contact HIT solar battery structure based on N type silicon chip according to claim 1 is characterized in that: one deck silicon nitride antireflective coating thickness of N type silicon chip front surface is 75 ~ 85nm, and refractive index is 2.0 ~ 2.2.
4. a kind of back-contact HIT solar battery structure according to claim 1 based on N type silicon chip, it is characterized in that: N type silicon chip is carried on the back one deck intrinsic amorphous silicon thin layer in surperficial p type island region territory, and the film thickness scope is 1 ~ 50000nm; One deck P type amorphous silicon thin layer, the film thickness scope is 1 ~ 50000nm.
5. a kind of back-contact HIT solar battery structure based on N type silicon chip according to claim 1 is characterized in that: one deck SiO on N type silicon chip back side N type zone and p type island region territory
2Thin layer, thickness is at 1 ~ 50000nm.
6. a kind of back-contact HIT solar battery structure according to claim 1 based on N type silicon chip, it is characterized in that: the silk screen printing electrocondution slurry is as electrode respectively in the N type zone on N type silicon chip back of the body surface and p type island region territory, and the electrode printing material that adopts on the N type zone is starched for silver; The electrode printing material that adopts on the p type island region territory is silver slurry, silver-colored aluminium paste, or the similar conventional rear surface of solar cell silver aluminium structure of joining is a kind of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120107672 CN202076296U (en) | 2011-04-13 | 2011-04-13 | Back touch type HIT (heterojunction with intrinsic thin layer) solar battery structure based on N type silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120107672 CN202076296U (en) | 2011-04-13 | 2011-04-13 | Back touch type HIT (heterojunction with intrinsic thin layer) solar battery structure based on N type silicon wafer |
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| CN202076296U true CN202076296U (en) | 2011-12-14 |
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| CN 201120107672 Expired - Lifetime CN202076296U (en) | 2011-04-13 | 2011-04-13 | Back touch type HIT (heterojunction with intrinsic thin layer) solar battery structure based on N type silicon wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931269A (en) * | 2012-11-29 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof |
-
2011
- 2011-04-13 CN CN 201120107672 patent/CN202076296U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931269A (en) * | 2012-11-29 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof |
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Granted publication date: 20111214 |
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