CN210040211U - Thin film photovoltaic cell - Google Patents
Thin film photovoltaic cell Download PDFInfo
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- CN210040211U CN210040211U CN201920814030.4U CN201920814030U CN210040211U CN 210040211 U CN210040211 U CN 210040211U CN 201920814030 U CN201920814030 U CN 201920814030U CN 210040211 U CN210040211 U CN 210040211U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a film photovoltaic cell, which is arranged on one side of the display surface of a display module and comprises a transparent substrate and photovoltaic units which are arranged on the transparent substrate and are arranged towards the display module; the photovoltaic unit comprises a front electrode arranged on the transparent substrate, a light absorption layer arranged on the front electrode and a back electrode arranged on the light absorption layer; and a metal auxiliary electrode contacting the front electrode, and a protective layer for protecting the back electrode, the light absorbing layer, the front electrode, and the metal auxiliary electrode, the metal auxiliary electrode contacting the front electrode for serving as a gate bus line or reducing the resistance of the front electrode. Implement the utility model discloses, be connected with auxiliary electrode through with the front electrode contact, auxiliary electrode is as the grid bus or reduces the resistance of front electrode, and the metal auxiliary electrode can be decided according to effective photovoltaic conversion area with the coupling part area of front electrode, and it can prevent that front electrode resistance is too big to photovoltaic conversion efficiency's influence to improve whole film photovoltaic cell's efficiency.
Description
Technical Field
The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a thin film photovoltaic cell.
Background
With the increasing demand of people for energy and the continuous development of thin film photovoltaic cell technology, the thin film photovoltaic cell is applied to a display module (such as a wearable electronic product), and the technology of supplying power to the display module by using the principle of converting light into electricity is widely applied.
Because wearable electronic products are not only used outdoors or in a strong light environment, but also used indoors or in a weak light environment for more time, how to improve the photoelectric conversion efficiency in the weak light environment becomes one of the technical problems to be solved urgently in the manufacturing technology of the thin film photovoltaic cell.
Disclosure of Invention
In order to solve the disadvantages of the prior art, the present invention provides a thin film photovoltaic cell, in which an auxiliary electrode is connected to a front electrode in a contact manner, the auxiliary electrode serves as a gate bus or reduces the resistance of the front electrode, the area of the connection portion of the metal auxiliary electrode and the front electrode can be determined according to the effective photovoltaic conversion area, and the influence of the excessive resistance of the front electrode on the photovoltaic conversion efficiency can be prevented, thereby improving the efficiency of the entire thin film photovoltaic cell.
The technical effect to be achieved by the invention is realized by the following scheme: a thin-film photovoltaic cell is arranged on one side of a display surface of a display module and comprises a transparent substrate and photovoltaic units arranged on the transparent substrate and facing the display module; the photovoltaic unit comprises a front electrode arranged on the transparent substrate, a light absorption layer arranged on the front electrode and a back electrode arranged on the light absorption layer; and a metal auxiliary electrode contacting the front electrode and a protective layer for protecting the back electrode, the light absorbing layer, the front electrode and the metal auxiliary electrode, the metal auxiliary electrode contacting the front electrode and being connected to serve as a gate bus line or to reduce the resistance of the front electrode.
Preferably, the metal auxiliary electrode is at least partially formed on a lower surface of the front electrode, and the metal auxiliary electrode is formed on one side or both sides of the front electrode.
Preferably, the surface of the metal auxiliary electrode, which is in contact with the front electrode, is at least partially an inclined surface facing away from the metal auxiliary electrode.
Preferably, the metal auxiliary electrode is formed on the upper surface of the front electrode, and an insulating layer is further disposed between the metal auxiliary electrode and the back electrode.
Preferably, the light absorbing layer and the back electrode are arranged on the front electrode at intervals, each of the light absorbing layer and the back electrode is further covered with an insulating layer, a plurality of openings are formed between the insulating layers, and the metal auxiliary electrode is in contact connection with the front electrode through the openings.
Preferably, the lower surface of the metal auxiliary electrode is further provided with an anti-reflection layer.
The invention has the following advantages:
the auxiliary electrode is connected with the front electrode in a contact mode and used as a grid bus or for reducing the resistance of the front electrode, the area of the connecting part of the metal auxiliary electrode and the front electrode can be determined according to the effective photovoltaic conversion area, the influence of overlarge resistance of the front electrode on the photovoltaic conversion efficiency can be prevented, and therefore the efficiency of the whole thin-film photovoltaic cell is improved.
Drawings
FIG. 1 is a schematic plane view of a thin film photovoltaic cell applied to a display module according to the present invention;
FIG. 2 is a schematic cross-sectional view of a first embodiment of a thin film photovoltaic cell in accordance with the present invention;
FIG. 3 is a schematic cross-sectional view of a second embodiment of a thin film photovoltaic cell in accordance with the present invention;
fig. 4 is a schematic cross-sectional structure diagram of a third embodiment of the thin film photovoltaic cell of the present invention.
Detailed Description
The invention is described in detail below with reference to the drawings, wherein examples of the embodiments are shown in the drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," "disposed," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be connected through the interconnection of two elements or through the interaction of two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Referring to fig. 1 to 4, the present invention provides a method for manufacturing a thin film photovoltaic cell, wherein the thin film photovoltaic cell is disposed on one side of a display surface of a display module to provide power for the display module, and the thin film photovoltaic cell may be formed in a frame region (e.g., an annular region shown in fig. 1) of the display module, may also be formed in a viewing region (e.g., an inner circle region shown in fig. 1) of the display module, and may also be disposed in both the frame region and the viewing region, and the thin film photovoltaic cell formed in the viewing region may be negligible for normal display of the display module.
The thin film photovoltaic cell comprises a transparent substrate 10 and photovoltaic units which are arranged on the transparent substrate 10 and face a display module; the photovoltaic unit includes a front electrode 20 disposed on the transparent substrate 10, a light absorbing layer 30 disposed on the front electrode 20, and a back electrode 40 disposed on the light absorbing layer 30. The thin film photovoltaic cell of the embodiment of the present invention further includes a metal auxiliary electrode 50 in contact with the front electrode 20, and a protective layer 60 for protecting the back electrode 40, the light absorbing layer 30, the front electrode 20, and the metal auxiliary electrode 50 from oxidation or scratching, etc., the metal auxiliary electrode 50 being connected in contact with the front electrode 20 to serve as a gate bus line or to reduce the resistance of the front electrode 20.
The area of the connection part of the metal auxiliary electrode 50 and the front electrode 20 can be determined according to the effective photovoltaic conversion area, which can prevent the influence of the excessive resistance of the front electrode 20 on the photovoltaic conversion efficiency, thereby improving the efficiency of the whole thin film photovoltaic cell.
Example one
Referring to fig. 2, a method for manufacturing a thin film photovoltaic cell according to an embodiment of the present invention includes the following steps:
step S1: providing a transparent substrate 10, and forming a metal auxiliary electrode 50 on the side of the transparent substrate 10 facing the display module.
Preferably, the film structure of the metal auxiliary electrode 50 may be a first Mo layer, a metal layer, and a second Mo layer sequentially stacked on the transparent substrate 10, wherein the metal layer may be made of a material with good conductivity such as Al, Ag, Au, and Cu, the first Mo layer may improve the adhesion between the middle metal layer and the transparent substrate 10, the second Mo layer may play a role in protection, and the second Mo layer may also be made of a metal with weak activity, wherein the film forming temperature of the metal auxiliary electrode 50 is 40 ℃ to 230 ℃, the thickness of the metal auxiliary electrode may be 500A for the first Mo layer, 500A for the metal layer, and 500A for the second Mo layer. The metal layer has strong reflection effect, so that the reflection light of the incident light surface of the sun is strong when the light is irradiated, and in order to reduce the phenomenon, a SiNx anti-reflection layer can be plated before the metal auxiliary electrode 50 is formed, or black metal such as molybdenum oxide is used for replacing the metal auxiliary electrode 50, so that the reflection effect of the thin-film photovoltaic cell device when the thin-film photovoltaic cell device is used is reduced. The film formation of the metal auxiliary electrode can be a physical vapor deposition or other film coating, but is not limited thereto.
Step S2: the metal auxiliary electrode 50 is imaged and chemically etched after being subjected to photoresist exposure.
Preferably, the proportion of the Al etching solution is HNO3=3%，HPO3=68%，CH3COOH=16%，H2O = 13%. Of course, the image can also be formed by laser etching, which is a conventional technique and is not described in detail.
Step S3: the front electrode 20 is formed on the transparent substrate 10, and the metal auxiliary electrode 50 is at least partially formed under the front electrode 20. The metal auxiliary electrode 50 is used for reducing the resistance of a current loop and improving the efficiency of the thin film photovoltaic cell device to the maximum extent.
Optionally, a step of texturing the front electrode 20 to form a rugged plane is further included to improve solar absorption.
Specifically, the front electrode 20 may be made of one or a combination of AZO, ITO, etc., and when used in combination, the AZO contacts the light absorption layer 30 to reduce the contact resistance, wherein the film forming temperature of the AZO is 200-350 ℃, and the film forming thickness is 300-1000 nm; the ITO can be formed at normal temperature, the film thickness is 500-3000A, preferably 235 ℃ and above, annealing is carried out to reduce ITO resistance, and for AZO, low-concentration HCl or alkaline substances can be selected for texturing to form an uneven plane so as to improve solar energy absorption.
Step S4: a light absorbing layer 30 is formed on the front electrode 20 by chemical vapor deposition.
Specifically, the light absorption layer 30 is divided into a P layer, an I layer and an N layer, wherein the thickness of the P layer is 10nm-30nm, the film forming temperature is 190-210 ℃, the thickness of the I layer is 200 nm-500 nm, the film forming temperature is 190-210 ℃, the thickness of the N layer is 20 nm-30nm, and the film forming temperature is 170-190 ℃. More preferably, the P layer is divided into two layers of P1 and P2, wherein P1 is gas, B2H6, SiH4, H2, B2H6 is SiH4=1:2 or 1:2.5, the deposition pressure is 9000mtorr, the pressure ensures that the P1-bit nanocrystalline silicon has good conductivity, the deposition power is 700w-1400w, and the deposition power is adjusted according to the actual film thickness. Hydrogen dilution ratio H2/SiH4= 600; p2 used B2H6, CH4, SiH4, H2, B2H6: SiH4: CH4= 1: 3.75: 2.5, the deposition pressure is 2500mtor, the deposition power is 80w-140w, and the hydrogen dilution ratio H2/SiH4= 10. The layer I uses two gases, namely SiH4 and H2, in a ratio of 1: 10, the deposition pressure is 2500mtorr, and the deposition power is 30w-500 w. The N1 used PH3, SiH4 and H2, PH 3: SiH4=1: 1.5, the deposition pressure is 1500mtor, and the deposition power is 90w-120 w; the hydrogen dilution ratio H2/SiH4= 5.5. The N2 used PH3, SiH4 and H2, PH 3: SiH4= 4: 3, deposition pressure is 1500mtor, deposition power is 30-60w, and hydrogen dilution ratio H2/SiH4= 8.
Step S5: a back electrode 40 is formed by Physical Vapor Deposition (PVD) on the light absorbing layer 30. Preferably, the film forming temperature of the back electrode 40 is 40-180 ℃, and the film thickness is 3000A-4000A. Or, a metal with weak activity such as Mo may be used on the metal layer of the back electrode 40 to protect the back electrode 40.
Step S6: after the cleaning, the back electrode 40 and the light absorbing layer 30 are imaged. In this step, an Al etching solution may be selected to etch the imaging back electrode 40; then, the light absorbing layer 30 is etched by a dry etching machine using a gas (cl 2: SF6= 10), or Ar and SF6 may be selected. The method mainly comprises the step of directly carrying out dry etching without carrying out demolding treatment on the photoresist before dry etching, thereby saving process steps.
Step S7: the front electrode 20 is subjected to photoresist exposure imaging and then to chemical etching, and preferably, the front electrode 20 can be imaged by means of chemical etching. Preferably, the width of the front electrode 20 is wider than that of the light absorbing layer 30 to secure an area of an effective photovoltaic conversion region.
Step S8: the outermost protective layer 60 is formed or coated with a film, preferably, SiNx film or an organic protective paste screen printing.
In the present embodiment, when the metal auxiliary electrode 50 is formed only on one side of the front electrode 20, the metal auxiliary electrode 50 may be used as a gate bus line of the front electrode 20; when the metal auxiliary electrodes 50 are formed at both sides of the front electrode 20, the metal auxiliary electrode 50 at one side serves as a gate bus line of the front electrode 20, and the metal auxiliary electrode 50 at the other side may serve to reduce the resistance of the front electrode 20, and may be connected by the metal in the protective layer 60 or in the form of an arch bridge near the bonding position, with an insulating layer 70 interposed to separate the back electrode 40. And the metal auxiliary electrodes 50 are disposed at both sides of the front electrode 20, the efficiency of reducing the resistance is improved, the area of the light absorbing layer 30 can be widened, and the installation area of the thin film photovoltaic cell is increased.
As a further improvement of the embodiment of the present invention, at least a portion of the contact surface of the metal auxiliary electrode 50 and the front electrode 20 is an inclined surface facing away from the metal auxiliary electrode 50, that is, the metal auxiliary electrode 50 has an inclined angle, which is beneficial to film formation of the front electrode 20 and will not break due to the existence of a vertical angle or a chamfer. Preferably, the inclination angle of the metal auxiliary electrode 50 is 70 ° or less.
It should be understood that the back electrode 40 is on the same vertical line as the light absorbing layer 30, and the inclined starting point of the auxiliary electrode does not have to be aligned with the light absorbing layer 30.
Example two
Referring to fig. 3, the difference between the second embodiment of the present invention and the first embodiment of the present invention is that the film formation of the front electrode 20 is performed first, and then the film formation of the metal auxiliary electrode 50 is performed, at this time, the metal auxiliary electrode 50 is formed on the upper surface of the front electrode 20.
The manufacturing method of the thin film photovoltaic cell in the second embodiment includes the following steps:
step S1: a transparent substrate 10 is provided, and a front electrode 20 is formed on the transparent substrate 10 facing the display module.
Optionally, a step of texturing the front electrode 20 to form a rugged plane is further included to improve solar absorption.
Step S2: a light absorbing layer 30 is formed on the front electrode 20 by chemical vapor deposition.
Step S3: and carrying out physical vapor deposition film forming, imaging and etching on the light absorption layer 30 by using the back electrode 40.
Step S4: the photoresist film is removed after the light absorbing layer 30 is directly dry-etched.
Step S5: the front electrode 20 is subjected to photoresist coating, exposure and imaging, and then is subjected to chemical etching, and then photoresist is removed.
Step S6: the insulating layer 70 is formed to prevent a short circuit caused by the connection of the gate bus line on the front electrode 20 and the back electrode 40. The insulating layer 70 may be made of organic material, and the angle between the insulating layer and the front electrode 20 should be controlled within 80 degrees to prevent the metal auxiliary electrode 50 from being disconnected due to too steep angle during film formation.
Furthermore, the insulating layer 70 may be simultaneously disposed on the periphery of the front electrode 20 for protecting the front electrode 20, as shown in fig. 3, because if the metal auxiliary electrode 50 is chemically etched, the etching solution can etch away the front electrode 20, where the insulating layer 70 is to protect the front electrode 20 from being etched.
Step S7: and forming a film on the metal auxiliary electrode 50, imaging, etching and carrying out photoresist demoulding treatment.
Step S8: the outermost protective layer 60 is preferably formed into a film or coated with a protective material such as sin x or an organic protective coating.
The width of the front electrode 20 described in this embodiment may be determined according to actual conditions, but the area without the back electrode 40 and the adjacent area are completely covered by a cover plate or the like during assembly, and are invisible areas, and there is no transparency, and only the photovoltaic conversion area is visible. The metal auxiliary electrode 50 may be directly connected to the light absorbing layer 30, or may be spaced apart from the light absorbing layer 30, and is not particularly limited.
It should be understood that the parameters of the film forming conditions of the front electrode 20, the photovoltaic layer, the back electrode 40, the metal auxiliary electrode 50, the insulating layer 70 and the protective layer 60, and the parameters of the imaging and etching conditions of the front electrode 20, the photovoltaic layer, the back electrode 40 and the metal auxiliary electrode 50 in the second embodiment of the present invention are the same as those in the first embodiment, and therefore, the description thereof is omitted.
Referring to fig. 4, in the present embodiment, the metal auxiliary electrode 50 may further extend from two sides of the front electrode 20 to the upper surface of the insulating layer 70 and then be connected in contact with each other, and the manufacturing method of the thin film photovoltaic cell includes first forming the light absorbing layer 30, the back electrode 40 and the insulating layer 70, and then forming the metal auxiliary electrode 50.
It should be understood that the extension of the metal auxiliary electrode 50 on the upper surface of the insulating layer 70 may be linear or sheet-shaped, and is not particularly limited.
In addition, when the thin film photovoltaic cell is applied to the frame region, the metal auxiliary electrode 50 at the edge of the inner frame of the frame region may be in a discontinuous ring shape, that is, the metal auxiliary electrode 50 is in a small dot shape or in a plurality of block shapes, and the dot or square metal auxiliary electrode 50 is connected with the gate bus (which may also be understood as the outermost metal auxiliary electrode 50) at the outermost periphery, so that the distribution may make the metal auxiliary electrode invisible to naked eyes, and the peripheral display effect of the visible area of the display module is improved.
EXAMPLE III
The third embodiment of the present invention is different from the second embodiment in that a step of opening the light absorbing layer 30, the back electrode 40 and the insulating layer 70 is further included, and the metal auxiliary electrode 50 is connected to the front electrode 20 through a hole to further reduce the resistance of the front electrode 20.
The manufacturing method of the thin film photovoltaic cell in the third embodiment comprises the following steps:
step S1: providing a transparent substrate 10, and forming a film on the front electrode 20 and performing image etching on the transparent substrate 10 facing the display module.
Optionally, a step of texturing the front electrode 20 to form a rugged plane is further included to improve solar absorption.
Step S2: a light absorbing layer 30 is formed on the front electrode 20 by chemical vapor deposition.
Step S3: and carrying out physical vapor deposition film forming and imaging etching on the back electrode 40 on the light absorption layer 30, forming a plurality of openings in the non-photoresist protection area in the etching process of the metal etching solution, and then reserving the photoresist to directly carry out dry etching on the light absorption layer 30, so that the front electrode 20 is reserved in the openings.
Step S4: an insulating layer 70 is formed on the back electrode 40. When the insulating layer 70 is made of organic materials such as organic photoresist, light can be directly exposed in the opening region to form an opening, so that a hole is formed from the insulating layer 70 down to the front electrode 20; when the insulating layer 70 is made of a non-metallic material such as SiNx, dry etching is performed.
Step S5: a metal auxiliary electrode 50 is formed, and the metal auxiliary electrode 50 is in contact with the front electrode 20 through the opening.
Step S6: the metal auxiliary electrode 50 is imaged and chemically etched after being subjected to photoresist exposure.
In the third embodiment, the metal auxiliary electrode 50 is in contact connection with the front electrode 20 through the opening to reduce the resistance, the metal auxiliary electrode 50 may also be formed on one side of the front electrode 20 to serve as a gate bus, and the metal auxiliary electrode 50 may also extend from the opening to the upper surface of the insulating layer 70 to be connected with each other, so that the effect of reducing the resistance is better.
In the third embodiment, the metal auxiliary electrode 50 may not be formed on the outer side of the front electrode 20, i.e. not connected to the front electrode 20, and the whole auxiliary electrode is distributed on the insulating layer 70, so that the color difference between the edge of the thin film photovoltaic cell device and the photovoltaic conversion ring does not occur, because the outermost region has no light absorbing layer 30 and has a certain color difference with the region having the light absorbing layer 30 when viewed from the front.
As a further improvement of the third embodiment of the present invention, the openings are irregularly distributed on the photovoltaic conversion ring, the openings may be circular areas with a diameter smaller than 10um or square areas with a side length of 10um, and in terms of the size, the requirement of macroscopic vision is satisfied, and the holes do not form color or visual difference, and generally have a better effect below 8 um. If the distribution of pores is seen macroscopically, the visual effect of the device is affected.
The film forming condition parameters of the front electrode 20, the photovoltaic layer, the back electrode 40, the metal auxiliary electrode 50 and the insulating layer 70, and the imaging and etching condition parameters of the front electrode 20, the photovoltaic layer, the back electrode 40 and the metal auxiliary electrode 50 in the third embodiment of the present invention are the same as those in the first embodiment, and therefore, the description thereof is omitted.
Example four
Referring to fig. 1 to 4, a thin film photovoltaic cell is provided in a fourth embodiment of the present invention, and the thin film photovoltaic cell is disposed on one side of a display surface of a display module, and generates power to charge the display module by using light energy. The thin-film photovoltaic cell comprises a transparent substrate 10 and photovoltaic units which are arranged on the transparent substrate 10 and face a display module; the photovoltaic unit includes a front electrode 20 disposed on the transparent substrate 10, a light absorbing layer 30 disposed on the front electrode 20, and a back electrode 40 disposed on the light absorbing layer 30. The thin film photovoltaic cell of the embodiment of the present invention further includes a metal auxiliary electrode 50 in contact with the front electrode 20, and a protective layer 60 for protecting the back electrode 40, the light absorbing layer 30, the front electrode 20, and the metal auxiliary electrode 50, the metal auxiliary electrode 50 being connected in contact with the front electrode 20 to serve as a gate bus line or to reduce the resistance of the front electrode 20.
The area of the connection part of the metal auxiliary electrode 50 and the front electrode 20 can be determined according to actual conditions, and the influence of overlarge resistance of the front electrode 20 on the photovoltaic conversion efficiency can be prevented, so that the efficiency of the whole thin film photovoltaic cell is improved.
In the embodiment of the present invention, the widths of the back electrode 40 and the front electrode 20 are not necessarily the same, and the overlapping portion between the two may be changed due to different processes, or may be designed to be non-overlapping. The width of the front electrode 20 in the embodiment of the present invention is determined according to specific situations, but the area without the back electrode 40 adjacent to the front electrode is completely covered by a cover plate or the like during assembly, and is an invisible area without transparency.
The thin film photovoltaic cell can be applied to a frame area (forming a photovoltaic conversion ring) of a display module, can also be applied to a visible area of the display module, and can also be provided with the thin film photovoltaic cell in the frame area and the visible area so as to improve the effective area of photovoltaic conversion. The external dimensions of the thin film photovoltaic cell are not particularly limited.
Referring to fig. 2, as an embodiment of the present invention, the metal auxiliary electrode 50 is at least partially formed on the lower surface of the front electrode 20, and the metal auxiliary electrode 50 is formed on one side or two sides of the front electrode 20.
Preferably, the metal auxiliary electrode 50 causes more light reflection of an incident light surface due to a strong reflection effect, and in order to reduce the phenomenon, the lower surface of the metal auxiliary electrode 50 is further provided with an antireflection layer, and the antireflection layer may be made of SiNx material or made of black metal such as molybdenum oxide, and is used for covering the metal auxiliary electrode 50 and reducing the reflection effect of the thin film photovoltaic cell device during use.
Preferably, the surface of the metal auxiliary electrode 50 contacting the front electrode 20 is at least partially an inclined surface facing away from the metal auxiliary electrode 50, i.e. the metal auxiliary electrode 50 has an inclined angle (preferably below 70 °), which is beneficial for the film formation of the front electrode 20 and will not be broken due to a vertical angle or a chamfer.
It should be understood that the back electrode 40 is on the same vertical line as the light absorbing layer 30, and the inclined starting point of the auxiliary electrode does not have to be aligned with the light absorbing layer 30.
When the metal auxiliary electrode 50 is formed only at one side of the front electrode 20, the metal auxiliary electrode 50 may serve as a gate bus line of the front electrode 20; when the metal auxiliary electrodes 50 are formed at both sides of the front electrode 20, the metal auxiliary electrodes 50 formed at the outer sides of the front electrode 20 serve as gate bus lines of the front electrode 20, and the metal auxiliary electrodes 50 formed at the inner sides of the front electrode 20 may function to reduce the resistance of the front electrode 20. And the metal auxiliary electrodes 50 are disposed at both sides of the front electrode 20, the efficiency of reducing the resistance is improved, the area of the light absorbing layer 30 can be widened, and the installation area of the thin film photovoltaic cell is increased.
Referring to fig. 3, as another embodiment of the present invention, the metal auxiliary electrode 50 is formed on the upper surface of the front electrode 20, an insulating layer 70 is further disposed between the metal auxiliary electrode 50 and the back electrode 40, and the insulating layer 70 is used to prevent the metal auxiliary electrode 50 and the back electrode 40 from being electrically connected to form a short circuit. The metal auxiliary electrode 50 may be formed at one side or both sides of the front electrode 20. When the metal auxiliary electrodes 50 are formed on both sides of the front electrode 20, the metal auxiliary electrodes 50 on both sides may be extended to be disposed to be connected to each other, which may effectively reduce the resistance of the front electrode 20. The extension of the metal auxiliary electrode 50 may be a full extension to form a sheet-like extension, or a short extension thereof to form a thin wire.
More preferably, the insulating layer 70 may be simultaneously disposed on the periphery of the front electrode 20 for protecting the front electrode 20.
Referring to fig. 4, in the present embodiment, the metal auxiliary electrodes 50 may further extend from two sides of the front electrode 20 to the upper surface of the insulating layer 70 and then be connected to each other in a contact manner.
It should be understood that the extension of the metal auxiliary electrode 50 on the upper surface of the insulating layer 70 may be linear or sheet-shaped, and is not particularly limited.
In addition, when the thin film photovoltaic cell is applied to the frame region, the metal auxiliary electrode 50 at the edge of the inner frame of the frame region may be in a discontinuous ring shape, that is, the metal auxiliary electrode 50 is in a small dot shape or in a plurality of block shapes, and the dot or square metal auxiliary electrode 50 is connected with the gate bus (which may also be understood as the outermost metal auxiliary electrode 50) at the outermost periphery, so that the distribution may make the metal auxiliary electrode invisible to naked eyes, and the peripheral display effect of the visible area of the display module is improved.
In the embodiment of the present invention, when the thin film photovoltaic cell is formed in the frame region of the display module, the metal with high conductivity is used as the metal auxiliary electrode 50, which is distributed at the outermost periphery of the frame region and connected to the front electrode 20, and the area of the connection portion (i.e., the width of the electrode line) is determined according to the total photovoltaic conversion area.
In the embodiment of the invention, the front electrode 20 and the back electrode 40 can be directly used as electrodes, silver paste and other materials with good conductivity are not required to be added, the process flow is shortened, and the product yield is improved. Although this patent details the process of amorphous silicon production, the light absorbing layer 30 of this structure is equally applicable to crystalline silicon, GaAs, CIGS or various photovoltaic layer combinations.
In the embodiment of the present invention, the shape structure formed by the thin film photovoltaic cell may be changed according to the shape requirement of the device, and is not limited to the circular ring shape illustrated in the present invention, and may also be a square or polygon shape.
The metal auxiliary electrode 50 may be replaced by a metal oxide such as AZO, ITO, or a stack of a metal oxide and a metal. Since the aperture is small and the front electrode 20 is uneven after texturing, the metal film formation is difficult, so that the film formation of the metal auxiliary electrode 50 is facilitated by adding a layer of metal oxide under the metal, and the efficiency of the thin-film photovoltaic cell is improved.
In order to ensure the transmittance of natural light, the front electrode 20 may be made of a high-transmittance metal oxide such as AZO, Ito, SnO, or a transparent material such as graphene, carbon nanotube, or nano metal.
The back electrode 40 may be made of Al, Mo, Ag, Cu, Au, or the like, or a combination of these metals, or may be made of a metal oxide or graphene as the front electrode 20.
In the embodiment of the present invention, the material of the metal auxiliary electrode 50 may be the same as that of the back electrode 40, and preferably, a metal with good conductivity is used.
The circular ring graphic area shown in the embodiment of the invention does not display the electrode shape bound with the FPC display, and the electrode shape can be designed according to actual needs.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the embodiments of the present invention and not for limiting the same, and although the embodiments of the present invention are described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the embodiments of the present invention, and these modifications or equivalent substitutions cannot make the modified technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. A thin film photovoltaic cell is arranged on one side of a display surface of a display module and is characterized by comprising a transparent substrate and photovoltaic units arranged on the transparent substrate and facing the display module; the photovoltaic unit comprises a front electrode arranged on the transparent substrate, a light absorption layer arranged on the front electrode and a back electrode arranged on the light absorption layer; and a metal auxiliary electrode contacting the front electrode and a protective layer for protecting the back electrode, the light absorbing layer, the front electrode and the metal auxiliary electrode, the metal auxiliary electrode contacting the front electrode and being connected to serve as a gate bus line or to reduce the resistance of the front electrode.
2. The thin film photovoltaic cell of claim 1, wherein the metal auxiliary electrode is formed at least partially on the lower surface of the front electrode, and the metal auxiliary electrode is formed on one side or both sides of the front electrode.
3. A thin film photovoltaic cell as claimed in claim 2 wherein the face of the metal auxiliary electrode in contact with the front electrode is at least partially beveled facing away from the metal auxiliary electrode.
4. The thin film photovoltaic cell of claim 1, wherein the metal auxiliary electrode is formed on the upper surface of the front electrode, and an insulating layer is further provided between the metal auxiliary electrode and the back electrode.
5. The thin film photovoltaic cell as claimed in claim 1, wherein the light absorbing layer and the back electrode are disposed on the front electrode at intervals, each of the light absorbing layer and the back electrode is further covered with an insulating layer, a plurality of openings are formed between the insulating layers, and the metal auxiliary electrode is in contact connection with the front electrode through the openings.
6. A thin film photovoltaic cell as claimed in any one of claims 1 to 5 wherein the lower surface of the metal auxiliary electrode is further provided with an anti-reflection layer.
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| CN201920814030.4U CN210040211U (en) | 2019-05-31 | 2019-05-31 | Thin film photovoltaic cell |
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| CN201920814030.4U CN210040211U (en) | 2019-05-31 | 2019-05-31 | Thin film photovoltaic cell |
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| CN210040211U true CN210040211U (en) | 2020-02-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277473A (en) * | 2019-05-31 | 2019-09-24 | 信利半导体有限公司 | A kind of manufacturing method and film photovoltaic cell of film photovoltaic cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277473A (en) * | 2019-05-31 | 2019-09-24 | 信利半导体有限公司 | A kind of manufacturing method and film photovoltaic cell of film photovoltaic cell |
| CN110277473B (en) * | 2019-05-31 | 2024-03-26 | 信利半导体有限公司 | Manufacturing method of thin-film photovoltaic cell and thin-film photovoltaic cell |
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