CN110277473A - A kind of manufacturing method and film photovoltaic cell of film photovoltaic cell - Google Patents
A kind of manufacturing method and film photovoltaic cell of film photovoltaic cell Download PDFInfo
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- CN110277473A CN110277473A CN201910472996.9A CN201910472996A CN110277473A CN 110277473 A CN110277473 A CN 110277473A CN 201910472996 A CN201910472996 A CN 201910472996A CN 110277473 A CN110277473 A CN 110277473A
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- auxiliary electrode
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
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- 238000005240 physical vapour deposition Methods 0.000 claims description 20
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- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of manufacturing method of film photovoltaic cell and film photovoltaic cells, wherein manufacturing method is the following steps are included: provide a transparent substrate, and the film forming of electrode, light absorbing layer and back electrode etches before transparent substrate is carried out towards the side of display module；Further include the steps that the film forming etching to metal auxiliary electrode, wherein metal auxiliary electrode is connected with preceding electrode and metal auxiliary electrode is separated with back electrode insulation.Implement the present invention, by the way that preceding electrode contact connectio is had auxiliary electrode, the resistance of electrode before the auxiliary electrode is used as grid bus or reduces, the excessive influence to photovoltaic conversion efficiency of electrode resistance before can preventing, to improve the efficiency of entire film photovoltaic cell.
Description
Technical field
The present invention relates to photovoltaic cell manufacturing technology fields, relate more specifically to a kind of manufacturing method of film photovoltaic cell
And film photovoltaic cell.
Background technique
Demand with people to the energy is higher and higher and the continuous development of film photovoltaic cell technology, by film photovoltaic electricity
Pond is applied in display module (such as wearable electronic product), the technology powered using the principle that light converts electricity to display module
It has been more and more widely used.
Due to wearable electronic product not only perhaps use under strong light environment outdoors the more time be indoors or
The photoelectric conversion efficiency for using, therefore how being lifted under low light environment under low light environment becomes film photovoltaic cell manufacturing technology
One of the technical problems that are urgent to solve.
Summary of the invention
In order to solve the deficiencies in the prior art, the present invention provides the manufacturing methods of a kind of film photovoltaic cell and thin
Film photovoltaic cell, before thering is auxiliary electrode, the auxiliary electrode to be used as grid bus or reduce preceding electrode contact connectio
The resistance of electrode, the coupling part area of the metal auxiliary electrode and preceding electrode can depending on effective photoelectric conversion area,
The excessive influence to photovoltaic conversion efficiency of electrode resistance before it can be prevented, to improve the efficiency of entire film photovoltaic cell.
Present invention technical effect to be achieved is realized by following scheme: a kind of manufacturing method of film photovoltaic cell,
The following steps are included: provide a transparent substrate, by transparent substrate towards display module side carry out before electrode, light absorbing layer and
The film forming of back electrode etches；Further include the steps that the film forming etching to metal auxiliary electrode, wherein metal auxiliary electrode and preceding electricity
Pole connects and metal auxiliary electrode is separated with back electrode insulation.
Preferably, the film photovoltaic cell manufacturing method the following steps are included:
Step S1: providing a transparent substrate, and transparent substrate is carried out metal auxiliary electrode film forming towards the side of display module；
Step S2: metal auxiliary electrode is imaged after gluing exposes and chemical etching；
Step S3: electrode film forming before carrying out on the transparent substrate, the metal auxiliary electrode is at least partially formed at this time
Below preceding electrode；
Step S4: light absorbing layer chemical vapor deposition film-formation is carried out on the preceding electrode；
Step S5: back electrode physical vapour deposition (PVD) film forming is carried out on the light absorbing layer；
Step S6: back electrode and light absorbing layer are imaged after cleaning；
Step S7: chemical etching is carried out after carrying out gluing exposure image to preceding electrode；
Step S8: film forming or gluing are carried out to outermost protective layer.
Preferably, the film photovoltaic cell manufacturing method the following steps are included:
Step S1: providing a transparent substrate, electrode film forming before transparent substrate is carried out towards the side of display module；
Step S2: light absorbing layer chemical vapor deposition film-formation is carried out on the preceding electrode；
Step S3: back electrode physical vapour deposition (PVD) film forming, imaging, etching are carried out on the light absorbing layer；
Step S4: photoresist film is taken off after directly carrying out dry etching to light absorbing layer；
Step S5: to preceding electrode carry out gluing exposure image after carry out chemical etching after take off photoresist；
Step S6: forming a film to insulating layer, and the grid bus on electrode before preventing is connect with back electrode leads to short circuit；
Step S7: forming a film to metal auxiliary electrode, imaging, etching, photoresist demoulding processing；
Step S8: it forms a film to outermost protective layer.
Preferably, the film photovoltaic cell manufacturing method the following steps are included:
Step S1: providing a transparent substrate, and electrode film forming and imaging are lost before transparent substrate is carried out towards the side of display module
It carves；
Step S2: light absorbing layer chemical vapor deposition film-formation is carried out on the preceding electrode；
Step S3: carrying out back electrode physical vapour deposition (PVD) film forming on the light absorbing layer and imaging etching, non-lithographic glue are protected
Shield region is formed several apertures in metal etch liquid etching process, then carries out retaining photoresist directly to light absorbing layer progress
Dry etching remains with preceding electrode in such hole；
Step S4: insulating layer film forming is carried out on the back electrode；
Step S5: forming a film to metal auxiliary electrode, and the metal auxiliary electrode is contacted by aperture with preceding electrode；
Step S6: metal auxiliary electrode is imaged after gluing exposes and chemical etching.
A kind of film photovoltaic cell, the film photovoltaic cell are set to the display surface side of display module, including transparent base
Plate and the photovoltaic cells arranged on the transparent substrate and towards display module；The photovoltaic cells include set on described
Preceding electrode on bright substrate, the light absorbing layer on the preceding electrode and equipped with the back electrode on the light absorbing layer；Also wrap
The metal auxiliary electrode contacted with preceding electrode is included, and for protecting back electrode, light absorbing layer, preceding electrode and metal auxiliary electrode
Protective layer, the metal auxiliary electrode and preceding electrode connect be used as grid bus or reduce before electrode resistance.
Preferably, the lower surface of electrode before the metal auxiliary electrode is at least partially formed in, and metal auxiliary electricity
The side or two sides of electrode before pole is formed in.
Preferably, the face that the metal auxiliary electrode is contacted with preceding electrode is at least partially backwards to the oblique of metal auxiliary electrode
Face.
Preferably, the upper surface of electrode, the metal auxiliary electrode and back electrode before the metal auxiliary electrode is formed in
Between be additionally provided with insulating layer.
Preferably, the light absorbing layer and back electrode are that several are arranged at intervals on the preceding electrode, each light
It is also covered with insulating layer on absorbed layer and back electrode, several apertures, the metal auxiliary electricity are formed between the insulating layer
Pole is connected by aperture and preceding electrode.
Preferably, the lower surface of the metal auxiliary electrode is additionally provided with anti-reflection layer.
The invention has the following advantages that
Pass through the electricity of electrode before thering is auxiliary electrode, the auxiliary electrode to be used as grid bus or reduce preceding electrode contact connectio
Resistance, the coupling part area of the metal auxiliary electrode and preceding electrode can be depending on effective photoelectric conversion areas, can be to prevent
The only excessive influence to photovoltaic conversion efficiency of preceding electrode resistance, to improve the efficiency of entire film photovoltaic cell.
Detailed description of the invention
Fig. 1 applies the planar structure schematic diagram in display module for film photovoltaic cell a kind of in the present invention；
Fig. 2 is the schematic cross-sectional view of the embodiment one of film photovoltaic cell in the present invention；
Fig. 3 is the schematic cross-sectional view of the embodiment two of film photovoltaic cell in the present invention；
Fig. 4 is the schematic cross-sectional view of the embodiment three of film photovoltaic cell in the present invention.
Specific embodiment
The present invention will be described in detail with reference to the accompanying drawings and examples, and the examples of the embodiments are shown in the accompanying drawings
Out, in which the same or similar labels are throughly indicated same or similar element or members with the same or similar functions
Part.The embodiments described below with reference to the accompanying drawings are exemplary, it is intended to be used to explain the present invention, and should not be understood as to this
The limitation of invention.
In the description of the present invention, it is to be understood that, term " length ", " width ", "upper", "lower", "front", "rear",
The orientation or positional relationship of the instructions such as "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is based on attached drawing institute
The orientation or positional relationship shown, is merely for convenience of description of the present invention and simplification of the description, rather than the dress of indication or suggestion meaning
It sets or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to limit of the invention
System.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation ",
Terms such as " settings " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be with
It is mechanical connection, is also possible to be electrically connected；It can be directly connected, can also can also be indirectly connected through an intermediary
The interaction relationship of connection or two elements inside two elements.It for the ordinary skill in the art, can be with
The concrete meaning of above-mentioned term in the present invention is understood as the case may be.
In conjunction with shown in Fig. 1-Fig. 4, the present invention provides a kind of manufacturing method of film photovoltaic cell, wherein film photovoltaic cell
It is used to provide electric power for display module set on the display surface side of display module, the rim area of display module can be formed in
(annular region as shown in Figure 1) can also be formed in the visible area (inner circle region as shown in Figure 1) of display module, may be used also
To be rim area and visible area while be equipped with the film photovoltaic cell, normal display when being formed in visible area to display module
It can be ignored.
Film photovoltaic cell of the present invention includes transparent substrate 10 and is set on the transparent substrate 10 and towards display
The photovoltaic cells of mould group arrangement；The photovoltaic cells include preceding electrode 20 on the transparent substrate 10, be set to it is described before
Light absorbing layer 30 on electrode 20 and equipped with the back electrode 40 on the light absorbing layer 30.The film photovoltaic electricity of the embodiment of the present invention
Pond further includes the metal auxiliary electrode 50 contacted with preceding electrode 20, and for protecting back electrode 40, light absorbing layer 30, preceding electrode
20 and metal auxiliary electrode 50 is not oxidized or the protective layer 60 that scratches etc., the metal auxiliary electrode 50 contacts with preceding electrode 20
The resistance of electrode 20 before connection is used as grid bus or reduces.
The coupling part area of the metal auxiliary electrode 50 and preceding electrode 20 can depending on effective photoelectric conversion area,
The excessive influence to photovoltaic conversion efficiency of 20 resistance of electrode before it can be prevented, to improve the effect of entire film photovoltaic cell
Rate.
Embodiment one
Please correspond to referring to Fig.2, film photovoltaic cell described in the embodiment of the present invention one manufacturing method the following steps are included:
Step S1: providing a transparent substrate 10, and transparent substrate 10 is carried out metal auxiliary electrode 50 towards the side of display module
Film forming.
Preferably, the film layer structure of the metal auxiliary electrode 50 can be the first Mo layers, metal layer, the 2nd Mo layers successively
It is stacked on the transparent substrate 10, wherein metal layer can use Al, Ag, Au, the material of the good conductivities such as Cu, and the first Mo layers
Can be improved the adhesion strength of intermediate metal layer Yu transparent substrate 10, the 2nd Mo layers can play a protective role, the described 2nd Mo layers
It can also use the not strong metal of activity, wherein the film-forming temperature of the metal auxiliary electrode 50 is 40 DEG C -230 DEG C, thickness
Can be the first Mo layers be Mo layer of 500A, metal layer 2000A-5000A, the 2nd be 500A.The metal layer is due to strong reflection
Effect, cause sun incident light plane light irradiation when reflected light it is strong, to reduce the phenomenon, can metal auxiliary electrode 50 at
It is coated with the anti-reflection layer of SiNx before film, or substitutes the metal auxiliary electrode 50 using ferrous metal such as molybdenum oxides, reduces the film
Reflection action when photovoltaic cell device uses.The film forming of the metal auxiliary electrode can be the modes such as physical vapour deposition (PVD) and plate
Film, but not limited to this.
Step S2: metal auxiliary electrode 50 is imaged after gluing exposes and chemical etching.
Preferably, the ratio of Al etching solution is HNO3=3%, HPO3=68%, CH3COOH=16%, H2O=13%.Certainly, may be used
To be imaged with the method for laser ablation, it is routine techniques, does not repeat.
Step S3: electrode 20 forms a film before carrying out on the transparent substrate 10, and the metal auxiliary electrode 50 is at least at this time
Before part is formed in below electrode 20.The metal auxiliary electrode 50 improves to greatest extent for reducing current loop resistance
The film photovoltaic cell device efficiency.
Optionally, further include the steps that preceding 20 making herbs into wool of electrode to form rough plane, to improve solar energy suction
It receives.
Specifically, the preceding electrode 20 can use AZO, one kind or combination of the materials such as ITO, when being applied in combination, AZO with
Light absorbing layer 30 is contacted to reduce contact resistance, and wherein the film-forming temperature of AZO is 200-350 DEG C, film forming thickness 300nm-
Between 1000nm；ITO can use film formation, film thickness 500A-3000A, it is preferred to use 235 DEG C or more of temperature is moved back
Fire can choose AZO and form rough plane with low concentration HCl or alkaline matter making herbs into wool to reduce ITO resistance, with
Improve solar absorption.
Step S4: 30 chemical vapor deposition film-formation of light absorbing layer is carried out on the preceding electrode 20.
Specifically, it is P layers, I layers and N layers that the light absorbing layer 30, which divides, and wherein P layers with a thickness of 10nm-30nm, film-forming temperature
It is 190 DEG C -210 DEG C, I layer 200 nm -500nm, 190 DEG C -210 DEG C of film-forming temperature, 20 nm -30nm of N layer, film-forming temperature
170℃-190℃.More there is choosing, described P layers is divided into P1 and two layers of P2, wherein P1: using gas, B2H6, SiH4, H2,
B2H6:SiH4=1:2 or 1:2.5, deposition pressure 9000mtorr, the pressure guarantee P1 nanocrystal silicons, have good
Electric conductivity, deposition power 700w-1400w are adjusted according to practical film thickness.SiH4=600 hydrogen dilution ratio H2/；P2 uses B2H6,
CH4, SiH4, H2, B2H6:SiH4:CH4=1:3.75:2.5, deposition pressure 2500mtor, deposition power 80w-140w,
SiH4=10 hydrogen dilution ratio H2/.Described I layers is using SiH4 and two kinds of gases of H2, ratio 1:10, deposition pressure
2500mtorr, deposition power 30w-500w.The N1 uses PH3, SiH4 and H2, PH3:SiH4=1:1.5, and deposition pressure is
1500mtor, deposition power 90w-120w；SiH4=5.5 hydrogen dilution ratio H2/.The N2 uses PH3, SiH4 and H2, PH3:
SiH4=8 SiH4=4:3, deposition pressure 1500mtor, deposition power 30-60w, hydrogen dilution ratio H2/.
Step S5: 40 physical vapor deposition (PVD) of back electrode film forming is carried out on the light absorbing layer 30.Preferably, institute
The film-forming temperature for stating back electrode 40 is 40 DEG C -180 DEG C, and film thickness uses 3000A-4000A.It can also be simultaneously in the gold of back electrode 40
Belong to layer and the weaker metal of Mo isoreactivity is used above, plays the role of protecting back electrode 40.
Step S6: back electrode 40 and light absorbing layer 30 are imaged after cleaning.First Al can be selected to etch in the step
Liquid etching imaging back electrode 40；Then dry etching board is put into, light absorbing layer 30 is etched, it is gases used (cl2:SF6=10), it can also
To select Ar and SF6.Here dry etching is directly carried out without the demoulding processing of photoresist mainly before dry etching, and saves work
Skill step.
Step S7: chemical etching is carried out after carrying out gluing exposure image to preceding electrode 20, can preferably use chemical etching
Mode carry out before electrode 20 imaging.Preferably, the width of the preceding electrode 20 is more wider than the width of light absorbing layer 30, to protect
Demonstrate,prove the area in effective photovoltaic conversion area.
Step S8: carrying out film forming or gluing to outermost protective layer 60, preferably can use SiNx film forming or organic guarantor
Collodion silk print is protected to complete.
In the present embodiment, before the metal auxiliary electrode 50 is made only in when the side of electrode 20, the metal auxiliary
Electrode 50 can be used as the grid bus of preceding electrode 20；Before the metal auxiliary electrode 50 is formed in when the two sides of electrode 20, institute
The metal auxiliary electrode 50 for stating side is used as the grid bus of preceding electrode 20, and the metal auxiliary electrode 50 of the other side, which can play, to be subtracted
The resistance effect of electrode 20 before few, the two can be attached by the metal in protective layer 60 or bound near at position
In the form of arch bridge, the two is connected, centre is separated with insulating layer 70 to separate back electrode 40.And metal auxiliary electrode 50 is set
It sets in the two sides of preceding electrode 20, improves the low-resistance efficiency of drop, the area of light absorbing layer 30 can be made to widen, make film photovoltaic
The laying area of battery increases.
As the further improvement of the embodiment of the present invention, the face that the metal auxiliary electrode 50 is contacted with preceding electrode 20 is at least
Part is backwards to the inclined-plane of metal auxiliary electrode 50, i.e. metal auxiliary electrode 50 has a tilt angle, is conducive to preceding electricity in this way
The film forming of pole 20 will not exist because of vertical angle or chamfering and is broken.Preferably, the inclination angle of the metal auxiliary electrode 50
Degree is 70 ° or less.
It should be understood that the back electrode 40 with light absorbing layer 30 in same vertical line, and the inclination of auxiliary electrode
Starting point is not necessarily intended to be aligned with light absorbing layer 30.
Embodiment two
It please correspond to refering to Fig. 3, the difference of the embodiment of the present invention two and embodiment one is before first carrying out that electrode 20 forms a film, then carries out
Metal auxiliary electrode 50 forms a film, at this point, the metal auxiliary electrode 50 is formed in the upper surface of preceding electrode 20.
The manufacturing method of film photovoltaic cell described in the present embodiment two the following steps are included:
Step S1: providing a transparent substrate 10, and electrode 20 forms a film before transparent substrate 10 is carried out towards the side of display module.
Optionally, further include the steps that preceding 20 making herbs into wool of electrode to form rough plane, to improve solar energy suction
It receives.
Step S2: 30 chemical vapor deposition film-formation of light absorbing layer is carried out on the preceding electrode 20.
Step S3: 40 physical vapour deposition (PVD) of back electrode film forming, imaging, etching are carried out on the light absorbing layer 30.
Step S4: photoresist film is taken off after directly carrying out dry etching to light absorbing layer 30.
Step S5: to preceding electrode 20 carry out gluing exposure image after carry out chemical etching after take off photoresist.
Step S6: forming a film to insulating layer 70, and the grid bus on electrode 20 before preventing is connect with back electrode 40
Lead to short circuit.The insulating layer 70 can select organic material, should control within 80 degree, be used for the angle of preceding electrode 20
Prevent metal auxiliary electrode 50 from disconnecting when forming a film since angle is too steep.
In addition, the periphery of preceding electrode 20 can be arranged in the insulating layer 70 simultaneously, for protecting the preceding electrode 20, such as
Shown in Fig. 3, because if etching liquid can etch away preceding electrode 20 when the chemical etching of metal auxiliary electrode 50, insulation at this
Layer 70 is to protect preceding electrode 20 to be not etched.
Step S7: forming a film to metal auxiliary electrode 50, imaging, etching, photoresist demoulding processing.
Step S8: to outermost protective layer 60 film forming or gluing, S iNx film forming or organic protective glue preferably be can use
Equal material protections.
Preceding 20 width of electrode described in the present embodiment can according to the actual situation depending on, but itself and adjacent no 40th area of back electrode
Domain can be completely covered in assembling by cover board etc., be invisible area, there is no the transparencys, and only photovoltaic conversion area is visible
's.The metal auxiliary electrode 50 can be directly connected to light absorbing layer 30, can also be spaced apart with light absorbing layer 30, not made to have
Body limits.
It should be understood that preceding electrode 20, photovoltaic layer described in the embodiment of the present invention two, back electrode 40, metal auxiliary electricity
The membrance casting condition parameter and preceding electrode 20 of pole 50, insulating layer 70 and protective layer 60, photovoltaic layer, back electrode 40, metal auxiliary electricity
The imaging of pole 50, the conditional parameter of etching are the same as example 1, therefore do not repeat.
It please correspond to refering to Fig. 4, in the present embodiment, the metal auxiliary electrode 50 can also be extended to from the two sides of preceding electrode 20
Contact with each other connection behind the upper surface of insulating layer 70, and the production method of the film photovoltaic cell is first to carry out light absorbing layer at this time
30, the film forming of back electrode 40 and insulating layer 70, then carry out the film forming of metal auxiliary electrode 50.
It should be understood that extension of the metal auxiliary electrode 50 in 70 upper surface of insulating layer can be threadiness, it can also
To be sheet, it is not especially limited.
In addition, the film photovoltaic cell is applied at rim area, the metal at the inside casing edge of the rim area assists electricity
Pole 50 can be discontinuous ring-type, i.e., metal auxiliary electrode 50 is lesser dotted or several square blocks, this it is dotted or
The metal auxiliary electrode 50 of person's square block and the grid bus of outermost are (it can be appreciated that the metal auxiliary electrode of outermost
50) it connects, distribution in this way can make naked eyes invisible, promote the peripheral display effect of the visible area of display module.
Embodiment three
The difference of the embodiment of the present invention three and embodiment two is to further include opening light absorbing layer 30, back electrode 40 and insulating layer 70
The step of hole, 50 through hole of metal auxiliary electrode are connect with preceding electrode 20, to further decrease the resistance of preceding electrode 20.
The manufacturing method of film photovoltaic cell described in the present embodiment three the following steps are included:
Step S1: provide a transparent substrate 10, by transparent substrate 10 towards display module side carry out before electrode 20 film forming and
Imaging etching.
Optionally, further include the steps that preceding 20 making herbs into wool of electrode to form rough plane, to improve solar energy suction
It receives.
Step S2: 30 chemical vapor deposition film-formation of light absorbing layer is carried out on the preceding electrode 20.
Step S3: carrying out 40 physical vapour deposition (PVD) of back electrode film forming and imaging etching on the light absorbing layer 30, non-
Photoresist protection zone is formed several apertures in metal etch liquid etching process, then carries out retaining photoresist directly to light suction
It receives layer 30 and carries out dry etching, electrode 20 before remaining in such hole.
Step S4: insulating layer 70 is carried out on the back electrode 40 and is formed a film.When the insulating layer 70 selects organic photoresist
When equal organic materials, it can use up and directly be exposed in opening area, form aperture, thus form one and alienate oneself edge layer 70 down
To the hole of preceding electrode 20；When the insulating layer 70 is using nonmetallic materials such as SiNx, then dry etching is carried out.
Step S5: forming a film to metal auxiliary electrode 50, and the metal auxiliary electrode 50 passes through aperture and preceding electrode 20
Contact.
Step S6: metal auxiliary electrode 50 is imaged after gluing exposes and chemical etching.
In the present embodiment three, the metal auxiliary electrode 50 is connected by aperture and preceding electrode 20 to reduce resistance,
The side of electrode 20 is used as grid bus before the metal auxiliary electrode 50 is additionally formed in, and the metal auxiliary electrode 50 is also
It is more preferable that the upper surface that insulating layer 70 can be extended to from aperture is connected with each other the effect for making to reduce resistance.
In the present embodiment three, the metal auxiliary electrode 50 can be not formed in front of electrode 20 lateral surface, i.e., not with it is preceding
Electrode 20 connects, and entire auxiliary electrode is distributed on insulating layer 70, such film photovoltaic cell device edge and photovoltaic conversion ring
The difference of color would not occur, because the region of outermost does not have light absorbing layer 30 in terms of front, and have light absorbing layer 30
Region has certain color difference.
As the further improvement of the embodiment of the present invention three, the aperture is irregular to be distributed in above photovoltaic conversion ring, institute
The squared region that aperture can be circle of the diameter less than 10um or side length is 10um is stated, in the regulation of size, meets macroscopic view
Visually, this some holes will not form color or vision difference, and general 8um or less effect is preferable.If macroscopically seeing point in hole
Cloth then will affect the visual effect of device.
Preceding electrode 20, photovoltaic layer, back electrode 40, metal auxiliary electrode 50 and insulating layer 70 described in the embodiment of the present invention three
Membrance casting condition parameter and preceding electrode 20, photovoltaic layer, back electrode 40, the imaging of metal auxiliary electrode 50, etching condition ginseng
Number is the same as example 1, therefore is not repeated.
Example IV
Fig. 1-Fig. 4 is please referred to, the embodiment of the present invention four provides a kind of film photovoltaic cell, which is set to display mould
The display surface side of group is charged using optical energy power to display module.The film photovoltaic cell includes transparent substrate 10 and sets
In the photovoltaic cells arranged on the transparent substrate 10 and towards display module；The photovoltaic cells include being set to the transparent base
Preceding electrode 20 on plate 10, the light absorbing layer 30 on the preceding electrode 20 and equipped with the back electrode on the light absorbing layer 30
40.The film photovoltaic cell of the embodiment of the present invention further includes the metal auxiliary electrode 50 contacted with preceding electrode 20, and for protecting
Backpiece electrode 40, light absorbing layer 30, preceding electrode 20 and metal auxiliary electrode 50 protective layer 60, the metal auxiliary electrode 50 with
Preceding electrode 20 connects the resistance for being used as grid bus or reducing preceding electrode 20.
The coupling part area of the metal auxiliary electrode 50 and preceding electrode 20 can according to the actual situation depending on, can be to prevent
The only preceding excessive influence to photovoltaic conversion efficiency of 20 resistance of electrode, to improve the efficiency of entire film photovoltaic cell.
Back electrode 40 described in the embodiment of the present invention is not necessarily consistent with the width of preceding electrode 20, coincidence part between the two
Divide because the difference of technique can change, may be designed as not being overlapped.The width root of preceding electrode 20 described in the embodiment of the present invention
It can be completely covered by cover board etc. depending on concrete condition, but with adjacent no 40 region of back electrode in assembling, be invisible area
Domain, there is no the transparencys.
Film photovoltaic cell of the invention can be applied in the rim area (formed photovoltaic conversion ring) of display module, can also be with
The visible area in display module is applied, film photovoltaic cell can also be equipped in rim area and visible area, is turned with improving photovoltaic
Effective area is changed, when applying in visible area, the film photovoltaic cell is preferred with the display effect for not influencing visible area, such as
Film photovoltaic cell can be made into tiny linear shape, and perhaps the film photovoltaic cell of the linear shape of lattice-shaped or lattice-shaped makes
It is visually invisible.The outer dimension of the film photovoltaic cell is not specifically limited.
Referring to Fig. 2, as one embodiment of the present invention, before the metal auxiliary electrode 50 is at least partially formed in
The lower surface of electrode 20, and the metal auxiliary electrode 50 is formed in the side or two sides of preceding electrode 20.
Preferably, the metal auxiliary electrode 50 causes the reflection of incident light plane light more due to strong reflection effect, to reduce
The phenomenon, the lower surface of the metal auxiliary electrode 50 are additionally provided with anti-reflection layer, and the anti-reflection layer can use SiNx material,
Or using ferrous metal materials such as molybdenum oxides, for covering metal auxiliary electrode 50, reducing the film photovoltaic cell device makes
The reflection action of used time.
More preferably, the face that the metal auxiliary electrode 50 is contacted with preceding electrode 20 is at least partially backwards to metal auxiliary electrode
50 inclined-plane, i.e. metal auxiliary electrode 50 have a tilt angle (preferably 70 ° or less), be conducive to so preceding electrode 20 at
Film will not be broken because of vertical angle or chamfering.
It should be understood that the back electrode 40 with light absorbing layer 30 in same vertical line, and the inclination of auxiliary electrode
Starting point is not necessarily intended to be aligned with light absorbing layer 30.
Before the metal auxiliary electrode 50 is made only in when the side of electrode 20, the metal auxiliary electrode 50 can be used as
The grid bus of preceding electrode 20；Before the metal auxiliary electrode 50 is formed in when the two sides of electrode 20, it is formed in the preceding electricity
The metal auxiliary electrode 50 in 20 outside of pole is used as the grid bus of preceding electrode 20, and the metal for being formed in 20 inside of preceding electrode is auxiliary
Help electrode 50 that can play the role of the resistance of electrode 20 before reducing.And the two sides of preceding electrode 20 are arranged in metal auxiliary electrode 50,
The low-resistance efficiency of drop is improved, the area of light absorbing layer 30 can be made to widen, increase the laying area of film photovoltaic cell.
Referring to Fig. 3, the metal auxiliary electrode 50 is formed in preceding electrode 20 as another embodiment of the invention
Upper surface, be additionally provided with insulating layer 70 between the metal auxiliary electrode 50 and back electrode 40, the insulating layer 70 is for preventing
Metal auxiliary electrode 50 and the conducting of back electrode 40 form short circuit.The one of electrode 20 before the metal auxiliary electrode 50 can be formed in
Side or two sides.Before the metal auxiliary electrode 50 is formed in when the two sides of electrode 20, the metal auxiliary electrode of the two sides
50 can extend to interconnection setting, and the prevention of electrode 20 is effectively reduced before can making in this way.The metal auxiliary electrode 50
Extension can be all extend make extension formed sheet, be also possible to a bit of extension therein, extension is formed
It is thin-line-shaped.
More preferably, the periphery of preceding electrode 20 can be arranged in the insulating layer 70 simultaneously, for protecting the preceding electrode 20.
It please correspond to refering to Fig. 4, in the present embodiment, the metal auxiliary electrode 50 can also be extended to from the two sides of preceding electrode 20
Contact with each other connection behind the upper surface of insulating layer 70.
It should be understood that extension of the metal auxiliary electrode 50 in 70 upper surface of insulating layer can be threadiness, it can also
To be sheet, it is not especially limited.
In addition, the film photovoltaic cell is applied at rim area, the metal at the inside casing edge of the rim area assists electricity
Pole 50 can be discontinuous ring-type, i.e., metal auxiliary electrode 50 is lesser dotted or several square blocks, this it is dotted or
The metal auxiliary electrode 50 of person's square block and the grid bus of outermost are (it can be appreciated that the metal auxiliary electrode of outermost
50) it connects, distribution in this way can make naked eyes invisible, promote the peripheral display effect of the visible area of display module.
As another embodiment of the invention, the light absorbing layer 30 and back electrode 40 are arranged at intervals on for several
On the preceding electrode 20, be also covered with insulating layer 70 on each light absorbing layer 30 and back electrode 40, the insulating layer 70 it
Between be formed with several apertures, the metal auxiliary electrode 50 is connected by aperture and preceding electrode 20.Preferably, the gold
Latticed or demihull shape can be also interconnected to form on back electrode 40 by belonging to after auxiliary electrode 50 extends from the aperture.Institute
Stating the number of openings can be a large amount of and can be random distribution.
In present embodiment, the outside of electrode 20 is used as grid bus before the metal auxiliary electrode 50 can be formed in,
The lateral surface of electrode 20, is thus not in the difference of color before can also being not formed in, because in terms of front, outermost
Region does not have light absorbing layer 30, has certain color difference with the region for having light absorbing layer 30.
In the embodiment of the present invention, when the film photovoltaic cell is formed in the rim area of display module, by the conduction
The high metal of rate is distributed in the outermost of rim area as metal auxiliary electrode 50, is connected with preceding electrode 20, coupling part area
Depending on (i.e. electrode line width) size is according to total photovoltaic conversion area.
In the embodiment of the present invention, the preceding electrode 20 and back electrode 40 can be used directly as electrode, not need to increase
The material of other good conductivities such as silver paste shortens process flow, improves product yield.Although the detailed system of amorphous silicon of this patent
Standby technique, but the equally applicable crystalline silicon of light absorbing layer 30 described in the structure, GaAs, CIGS or various difference photovoltaic layer combination.
In the embodiment of the present invention, the shape and structure that the film photovoltaic cell is formed can be needed according to the shape of device and
Change, is not limited only to the circular ring shape illustrated in the present invention, is also possible to rectangular or polygon etc..
The metal auxiliary electrode 50 can use AZO, the lamination of the metal oxides such as ITO or metal oxide and metal
To replace.Since aperture diameter is smaller, and after making herbs into wool, preceding electrode 20 is rough shape, these can all cause gold
Category film forming is relatively difficult, therefore adds one layer of metal oxide to be conducive to the film forming of metal auxiliary electrode 50 under metal, improves thin
The efficiency of film photovoltaic cell.
AZO, Ito, the high transmittances metal such as SnO can be used in order to guarantee the transmitance of natural light in the preceding electrode 20
Oxide or graphene, carbon nanotube, the transparency materials such as nano metal.
The back electrode 40 can be used metal Al, Mo, Ag, and the materials such as Cu, Au or the metal are applied in combination, can also be with
Use the metal oxide and the materials such as graphene as preceding electrode 20.
The material of metal auxiliary electrode 50 described in the embodiment of the present invention can be consistent with the material of back electrode 40, it is preferably to
Using the metal of good conductivity.
Annulus graphics field shown in the embodiment of the present invention does not show the electrode shape for showing and binding with FPC, can
To carry out the design of electrode shape according to actual needs.
Finally, it should be noted that above embodiments be only to illustrate the technical solution of the embodiment of the present invention rather than to its into
Row limitation, although the embodiment of the present invention is described in detail referring to preferred embodiment, those skilled in the art
It should be understood that the technical solution of the embodiment of the present invention can be still modified or replaced equivalently, and these are modified or wait
The range of modified technical solution disengaging technical solution of the embodiment of the present invention cannot also be made with replacement.
Claims (10)
1. a kind of manufacturing method of film photovoltaic cell, which comprises the following steps: a transparent substrate is provided, it will be saturating
The film forming etching of electrode, light absorbing layer and back electrode before bright substrate is carried out towards the side of display module；It further include auxiliary to metal
The step of helping the film forming of electrode to etch, wherein metal auxiliary electrode and preceding electrode connect simultaneously metal auxiliary electrode and back electrode
Insulation separates.
2. a kind of manufacturing method of film photovoltaic cell as described in claim 1, which comprises the following steps:
Step S1: providing a transparent substrate, and transparent substrate is carried out metal auxiliary electrode film forming towards the side of display module；
Step S2: metal auxiliary electrode is imaged after gluing exposes and chemical etching；
Step S3: electrode film forming before carrying out on the transparent substrate, the metal auxiliary electrode is at least partially formed at this time
Below preceding electrode；
Step S4: light absorbing layer chemical vapor deposition film-formation is carried out on the preceding electrode；
Step S5: back electrode physical vapour deposition (PVD) film forming is carried out on the light absorbing layer；
Step S6: back electrode and light absorbing layer are imaged after cleaning；
Step S7: preceding electrode is imaged, is etched；
Step S8: film forming or gluing are carried out to outermost protective layer.
3. a kind of manufacturing method of film photovoltaic cell as described in claim 1, which comprises the following steps:
Step S1: providing a transparent substrate, electrode film forming before transparent substrate is carried out towards the side of display module；
Step S2: light absorbing layer chemical vapor deposition film-formation is carried out on the preceding electrode；
Step S3: back electrode physical vapour deposition (PVD) film forming, imaging, etching are carried out on the light absorbing layer；
Step S4: photoresist is taken off after directly carrying out dry etching to light absorbing layer；
Step S5: photoresist is taken off after preceding electrode is imaged, is etched；
Step S6: film forming or gluing are carried out to insulating layer, the grid bus on electrode before preventing is connect with back electrode to be caused
Short circuit；
Step S7: forming a film to metal auxiliary electrode, imaging, etching, photoresist demoulding processing；
Step S8: it forms a film to outermost protective layer.
4. a kind of manufacturing method of film photovoltaic cell as described in claim 1, which comprises the following steps:
Step S1: providing a transparent substrate, and electrode film forming and imaging are lost before transparent substrate is carried out towards the side of display module
It carves；
Step S2: light absorbing layer chemical vapor deposition film-formation is carried out on the preceding electrode；
Step S3: carrying out back electrode physical vapour deposition (PVD) film forming on the light absorbing layer and imaging etching, non-lithographic glue are protected
Shield region is formed aperture in metal etch liquid etching process, then carries out retaining photoresist directly to light absorbing layer progress dry etching
It loses, remains with preceding electrode in such hole；
Step S4: insulating layer film forming is carried out on the back electrode；
Step S5: forming a film to metal auxiliary electrode, and the metal auxiliary electrode is contacted by aperture with preceding electrode；
Step S6: metal auxiliary electrode is imaged after gluing exposes and chemical etching.
5. a kind of film photovoltaic cell, the film photovoltaic cell is set to the display surface side of display module, which is characterized in that packet
The photovoltaic cells for including transparent substrate and being arranged on the transparent substrate and towards display module；The photovoltaic cells include setting
In the preceding electrode on the transparent substrate, the light absorbing layer on the preceding electrode and equipped with the back electricity on the light absorbing layer
Pole；It further include the metal auxiliary electrode contacted with preceding electrode, and for protecting back electrode, light absorbing layer, preceding electrode and metal
The protective layer of auxiliary electrode, the metal auxiliary electrode and preceding electrode connect as grid bus or reduce preceding electrode
Resistance.
6. a kind of manufacturing method of film photovoltaic cell as claimed in claim 5, which is characterized in that the metal auxiliary electrode
The lower surface of electrode before being at least partially formed in, and the metal auxiliary electrode is formed in the side or two sides of preceding electrode.
7. a kind of manufacturing method of film photovoltaic cell as claimed in claim 6, which is characterized in that the metal auxiliary electrode
The face contacted with preceding electrode is at least partially backwards to the inclined-plane of metal auxiliary electrode.
8. a kind of film photovoltaic cell as claimed in claim 5, which is characterized in that the metal auxiliary electrode is formed in preceding electricity
The upper surface of pole is additionally provided with insulating layer between the metal auxiliary electrode and back electrode.
9. a kind of film photovoltaic cell as claimed in claim 5, which is characterized in that the light absorbing layer and back electrode are several
It is a to be arranged at intervals on the preceding electrode, insulating layer, the insulating layer are also covered on each light absorbing layer and back electrode
Between be formed with several apertures, the metal auxiliary electrode is connected by aperture and preceding electrode.
10. such as a kind of described in any item film photovoltaic cells of claim 5-9, which is characterized in that the metal auxiliary electrode
Lower surface be additionally provided with anti-reflection layer.
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| PCT/CN2019/089809 WO2020237696A1 (en) | 2019-05-31 | 2019-06-03 | Manufacturing method for thin-film photovoltaic cell and thin-film photovoltaic cell |
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| CN110277473B (en) | 2024-03-26 |
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