CN103943693A - Back contact-type solar cell structure based on P-type silicon substrate and manufacturing method - Google Patents
Back contact-type solar cell structure based on P-type silicon substrate and manufacturing method Download PDFInfo
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- CN103943693A CN103943693A CN201410179507.8A CN201410179507A CN103943693A CN 103943693 A CN103943693 A CN 103943693A CN 201410179507 A CN201410179507 A CN 201410179507A CN 103943693 A CN103943693 A CN 103943693A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 116
- 239000010703 silicon Substances 0.000 title claims abstract description 116
- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000010410 layer Substances 0.000 claims description 132
- 239000013078 crystal Substances 0.000 claims description 43
- 238000002360 preparation method Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000010276 construction Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 239000006117 anti-reflective coating Substances 0.000 claims description 9
- 235000008216 herbs Nutrition 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 210000002268 wool Anatomy 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 4
- 230000000149 penetrating effect Effects 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 10
- 238000011160 research Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a back contact-type solar cell structure based on a P-type silicon substrate and a manufacturing method. The light receiving surface of the P-type silicon substrate is provided with a laminated structure with one or more anti-reflection layers. P-type layer portions and N-type layer portions which are alternate mutually are arranged on the backlight face of the P-type silicon substrate, and the P-type layer portions sequentially comprise P-type silicon substrate bodies, anti-reflection layers and electrodes penetrating through the anti-reflection layers and the P-type silicon substrate bodies; the N-type layer portions sequentially comprise P-type silicon substrate bodies, N-type crystalline silicon layers, anti-reflection layers and electrodes penetrating through the anti-reflection layers and the N-type crystalline silicon layers. The back contact-type solar cell structure based on the P-type silicon substrate and the manufacturing method are compatible with traditional crystalline silicon production lines, and production of back contact-type solar cells can be achieved through upgrading and rebuilding; compared with a traditional crystalline silicon solar cell, the problem of front electrode shading of a conventional solar cell is avoided, the use amount of metal electrodes is reduced, and the efficiency of the solar cells is increased; compared with a traditional HIT battery and an IBC solar cell, the manufacturing process is simple, and the equipment cost is also very low.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to a kind of P type silicon substrate back side contact solar battery structure and preparation method.
Background technology
Conventional solar cell adopts P type crystal silicon chip to carry out the method preparation of homojunction doping, and electrode is the both sides in solar cell respectively, and solar cell sensitive surface is because be subject to the eclipsing loss part sunlight of electrode like this.Some research institutions transfer to the back side solar cell front electrode whole or in part with regard to employing and raise the efficiency, for example MWT, IBC solar cell etc.
MWT solar cell is the back side of the method that burrows by laser current lead-through that positive solar cell thin grid are collected to battery, reduce like this blocking of front main grid, can significantly reduce blocking of solar cel electrode, the efficiency of this solar cell can be raised the efficiency 0.3-0.5% with respect to traditional solar cell.But this technology is monopolized by more external research institutions, technology transfer and equipment investment are all very high, so this technology only has a handful of company to use, but output is limited.
IBC solar cell is the solar cell technology that sunpower researches and develops and produces, and efficiency can reach more than 22%.Selection of Battery N-shaped backing material, front and rear surfaces all covers one deck heat oxide film, to reduce surface recombination.Utilize photoetching technique, carry out respectively phosphorus, boron local diffusion at cell backside, be formed with P district, N district that interdigitate is arranged, and the P of the side of being located thereon
+district, N
+district.The complex process of this structure solar cell, has repeatedly used grinding corrosion technology, and processing step is more than 30 steps, more loaded down with trivial details.
Summary of the invention
Object of the present invention is exactly a kind of P type silicon substrate back side contact solar battery structure and the preparation method who provides for the defect of above-mentioned existence, the present invention can compatible traditional crystal silicon production line, can realize through upgrading the production of back of the body contact solar cell, with respect to traditional crystal silicon solar battery, avoid the problem of conventional solar cell front electrode shading, reduce the use amount of metal electrode, improved the efficiency of solar cell; And with respect to traditional HIT battery, IBC solar cell, not only preparation technology is simple, equipment cost is also very low.
A kind of P type silicon substrate back side contact solar battery structure of the present invention and preparation method, technical scheme is, a kind of P type silicon substrate back side contact solar battery structure, P type silicon substrate sensitive surface is provided with the laminated construction of the above antireflection layer of one deck; P type silicon substrate shady face is P type layer segment and the N-type layer segment mutually replacing, and P type layer segment is followed successively by P type silicon substrate, antireflection layer, and penetrates the electrode that antireflection layer contacts with P type silicon substrate; N-type layer segment is followed successively by P type silicon substrate, N-type crystal silicon layer, antireflection layer, and penetrates the electrode that antireflection layer is connected with N-type crystal silicon layer.
The thickness of the antireflection layer of N-type crystal silicon layer, sensitive surface or shady face is 1-5000nm.
Preferably, N-type crystal silicon layer thickness is 0.2um, and the antireflection layer thickness of sensitive surface is 80nm, and the antireflection layer thickness of shady face is 120nm.
The antireflection layer of sensitive surface or shady face is SiO
x, Al
2o
3, SiN
xin one or more laminated construction;
The preparation method of described a kind of P type silicon substrate back side contact solar battery structure, comprises following three kinds of methods:
Method one, comprises the following steps successively:
(1) deposition of the P type silicon substrate sensitive surface after making herbs into wool antireflection layer;
(2) shady face carries out the doping of P type and forms N-type crystal silicon layer;
(3) block with mask plate the etching removal of carrying out part reverse diffusion layer, N-type crystal silicon layer and P type silicon substrate are alternately distributed mutually;
(4) carry out antireflective coating deposition at shady face;
(5) electrode preparation and sintering.
Method two, comprises the following steps successively:
(1) the silicon substrate shady face after making herbs into wool carries out the doping of P type and forms N-type crystal silicon layer;
(2) block with mask plate the etching removal of carrying out part reverse diffusion layer, N-type crystal silicon layer and P type silicon substrate are alternately distributed mutually;
(3) carry out respectively antireflective coating deposition at sensitive surface and shady face;
(4) electrode preparation and sintering.
In method one and method two, the etching removal method of mask plate shield portions diffusion layer backlight is:
silk screen printing layer protective layer outside the N-type crystal silicon layer part that needs etching to remove,
not protected part is removed in chemical corrosion,
remove protective layer, 4. remove the silicon oxide layer of protected layer protection part; The method of P type doping is High temperature diffusion doping or Implantation.
Method three, comprises the following steps successively:
(1) the silicon substrate shady face after making herbs into wool carries out local P type doping and forms N-type crystal silicon layer, and N-type crystal silicon layer and P type silicon substrate are alternately distributed mutually;
(2) carry out respectively antireflective coating deposition at sensitive surface and shady face;
(3) electrode preparation and sintering.
The method of P type doping is High temperature diffusion doping or Implantation.
The method that the doping of P type adopts mask to block Implantation.
A kind of P type silicon substrate back side contact solar battery structure of the present invention and preparation method's beneficial effect are, this invention preparation method preparation process is simple, overall structure has reduced the use amount of metal electrode, and avoided the problem of conventional solar cell front electrode shading, improve the efficiency of solar cell.
Adopt the method for invented technology three, made efficiency and be 22. 5% solar cell, this solar cell preparation method is with respect to traditional solar cell, efficiency is greatly improved, and through producing the upgrading of line, production cost is also significantly reduced, its major parameter is as shown in table 1
Table 1
。
brief description of the drawings:
Figure 1 shows that P type silicon substrate of the present invention back side contact solar battery structure schematic diagram;
Figure 2 shows that preparation method's flow chart of the embodiment of the present invention 1.
Figure 3 shows that preparation method's flow chart of the embodiment of the present invention 2.
Figure 4 shows that preparation method's flow chart of the embodiment of the present invention 3.
In figure, 1.P type silicon substrate; 2. front antireflection layer; 3.N type crystal silicon layer; 4. back side antireflection layer; 5. electrode.
embodiment:
In order to understand better the present invention, describe technical scheme of the present invention in detail below in conjunction with accompanying drawing, but the present invention is not limited thereto.
Embodiment 1
A kind of P type silicon substrate back side contact solar battery structure, P type silicon substrate 1 sensitive surface is provided with the laminated construction of front antireflection layer 2; P type silicon substrate 1 shady face is P type layer segment and the N-type layer segment mutually replacing, and P type layer segment is followed successively by P type silicon substrate 1, back side antireflection layer 4, and penetrates the electrode 5 that back side antireflection layer 4 contacts with P type silicon substrate 1; P type layer segment is followed successively by P type silicon substrate 1, N-type crystal silicon layer 3, back side antireflection layer 4, and penetrates the electrode 5 that back side antireflection layer 4 is connected with N-type crystal silicon layer 3.
N-type crystal silicon layer 3 thickness are 0.2um, and antireflection layer 2 thickness in front are 80nm, and antireflection layer 4 thickness in the back side are 120nm.
Front antireflection layer 2 is SiO
x/ SiN
xlaminated construction, back side antireflection layer 4 is Al
2o
3/ SiN
xlaminated construction;
Its preparation method is:
(1) the P type silicon substrate 1 sensitive surface deposition front antireflection layer 2 after making herbs into wool;
(2) shady face carries out the doping of P type and forms N-type crystal silicon layer 3;
(3) block with mask plate the etching removal of carrying out part reverse diffusion layer, N-type crystal silicon layer 2 and P type silicon substrate 1 are alternately distributed mutually;
(4) carry out antireflective coating deposition at shady face;
(5) electrode 5 is prepared and sintering.
The etching removal method of mask plate shield portions diffusion layer 3 backlight is:
silk screen printing layer protective layer outside the N-type crystal silicon layer 3 of removing at needs,
not protected part 3 is removed in chemical corrosion,
remove protective layer, 4. remove the silicon oxide layer of protected layer protection part.
Adopting this example to make efficiency is 20.2% solar cell, as shown in table 2:
Table 2
。
This shows that this structure has very strong application prospect.
Embodiment 2
A kind of P type silicon substrate back side contact solar battery structure, P type silicon substrate 1 sensitive surface is provided with the laminated construction of front antireflection layer 2; P type silicon substrate 1 shady face is P type layer segment and the N-type layer segment mutually replacing, and P type layer segment is followed successively by P type silicon substrate 1, back side antireflection layer 4, and penetrates the electrode 5 that back side antireflection layer 4 contacts with P type silicon substrate 1; P type layer segment is followed successively by P type silicon substrate 1, N-type crystal silicon layer 3, back side antireflection layer 4, and penetrates the electrode 5 that back side antireflection layer 4 is connected with N-type crystal silicon layer 3.
N-type crystal silicon layer 3 thickness are 0.2um, and antireflection layer 2 thickness in front are 80nm, and antireflection layer 4 thickness in the back side are 120nm.
Front antireflection layer 2 is SiO
x/ SiN
xlaminated construction, back side antireflection layer 4 is Al
2o
3/ SiN
xlaminated construction;
Its preparation method is:
(1) silicon substrate 1 shady face after making herbs into wool carries out the doping of P type and forms N-type crystal silicon layer 3;
(2) block with mask plate the etching removal of carrying out part reverse diffusion layer, N-type crystal silicon layer 3 and P type silicon substrate 1 are alternately distributed mutually;
(3) carry out respectively antireflective coating deposition at sensitive surface and shady face;
(4) electrode 5 is prepared and sintering.
The etching removal method of mask plate shield portions diffusion layer 3 backlight is:
silk screen printing layer protective layer outside the N-type crystal silicon layer 3 of removing at needs,
not protected part 3 is removed in chemical corrosion,
remove protective layer, 4. remove the silicon oxide layer of protected layer protection part.
Adopt the method for invented technology, made efficiency and be 21.25% solar cell, this solar cell preparation method is with respect to traditional solar cell, efficiency is greatly improved, through producing the upgrading of line, production cost is also significantly reduced, and its major parameter is as shown in table 3:
Table 3
。
Embodiment 3
A kind of P type silicon substrate back side contact solar battery structure, P type silicon substrate 1 sensitive surface is provided with the laminated construction of front antireflection layer 2; P type silicon substrate 1 shady face is P type layer segment and the N-type layer segment mutually replacing, and P type layer segment is followed successively by P type silicon substrate 1, back side antireflection layer 4, and penetrates the electrode 5 that back side antireflection layer 4 contacts with P type silicon substrate 1; P type layer segment is followed successively by P type silicon substrate 1, N-type crystal silicon layer 3, back side antireflection layer 4, and penetrates the electrode 5 that back side antireflection layer 4 is connected with N-type crystal silicon layer 3.
N-type crystal silicon layer 3 thickness are 0.2um, and antireflection layer 2 thickness in front are 80nm, and antireflection layer 4 thickness in the back side are 120nm.
Front antireflection layer 2 is SiO
x/ SiN
xlaminated construction, back side antireflection layer 4 is Al
2o
3/ SiN
xlaminated construction;
Its preparation method is:
(1) silicon substrate 1 shady face after making herbs into wool carries out local P type doping and forms N-type crystal silicon layer 3, and N-type crystal silicon layer 3 and P type silicon substrate 1 are alternately distributed mutually;
(2) carry out respectively antireflective coating deposition at sensitive surface and shady face;
(3) electrode 5 is prepared and sintering.
The method that the doping of P type adopts mask to block Implantation.
Adopt the method for invented technology, made efficiency and be 22. 5% solar cell, this solar cell preparation method is with respect to traditional solar cell, efficiency is greatly improved, through producing the upgrading of line, production cost is also significantly reduced, and its major parameter is as shown in table 4:
Table 4
。
Claims (10)
1. a P type silicon substrate back side contact solar battery structure, is characterized in that, P type silicon substrate sensitive surface is provided with the laminated construction of the above antireflection layer of one deck; P type silicon substrate shady face is P type layer segment and the N-type layer segment mutually replacing, and P type layer segment is followed successively by P type silicon substrate, antireflection layer, and penetrates the electrode that antireflection layer contacts with P type silicon substrate; N-type layer segment is followed successively by P type silicon substrate, N-type crystal silicon layer, antireflection layer, and penetrates the electrode that antireflection layer is connected with N-type crystal silicon layer.
2. a kind of P type silicon substrate back side contact solar battery structure according to claim 1, is characterized in that, the thickness of the antireflection layer of N-type crystal silicon layer, sensitive surface or shady face is 1-5000nm.
3. a kind of P type silicon substrate back side contact solar battery structure according to claim 1, is characterized in that, N-type crystal silicon layer thickness is 0.2um, and the antireflection layer thickness of sensitive surface is 80nm, and the antireflection layer thickness of shady face is 120nm.
4. a kind of P type silicon substrate back side contact solar battery structure according to claim 1, is characterized in that, the antireflection layer of sensitive surface or shady face is SiO
x, Al
2o
3, SiN
xin one or more laminated construction.
5. the preparation method of a kind of P type silicon substrate back side contact solar battery structure as claimed in claim 1, is characterized in that, comprises the following steps successively:
(1) deposition of the P type silicon substrate sensitive surface after making herbs into wool antireflection layer;
(2) shady face carries out the doping of P type and forms N-type crystal silicon layer;
(3) block with mask plate the etching removal of carrying out part reverse diffusion layer, N-type crystal silicon layer and P type silicon substrate are alternately distributed mutually;
(4) carry out antireflective coating deposition at shady face;
(5) electrode preparation and sintering.
6. the preparation method of a kind of P type silicon substrate back side contact solar battery structure as claimed in claim 1, is characterized in that, comprises the following steps successively:
(1) the silicon substrate shady face after making herbs into wool carries out the doping of P type and forms N-type crystal silicon layer;
(2) block with mask plate the etching removal of carrying out part reverse diffusion layer, N-type crystal silicon layer and P type silicon substrate are alternately distributed mutually;
(3) carry out respectively antireflective coating deposition at sensitive surface and shady face;
(4) electrode preparation and sintering.
7. according to the preparation method of a kind of P type silicon substrate back side contact solar battery structure described in claim 5 or 6, it is characterized in that, the etching removal method of mask plate shield portions diffusion layer backlight is:
silk screen printing layer protective layer outside the N-type crystal silicon layer part that needs etching to remove,
not protected part is removed in chemical corrosion,
remove protective layer, 4. remove the silicon oxide layer of protected layer protection part; The method of P type doping is High temperature diffusion doping or Implantation.
8. the preparation method of a kind of P type silicon substrate back side contact solar battery structure as claimed in claim 1, is characterized in that, comprises the following steps successively:
(1) the silicon substrate shady face after making herbs into wool carries out local P type doping and forms N-type crystal silicon layer, and N-type crystal silicon layer and P type silicon substrate are alternately distributed mutually;
(2) carry out respectively antireflective coating deposition at sensitive surface and shady face;
(3) electrode preparation and sintering.
9. the preparation method of a kind of P type silicon substrate back side contact solar battery structure according to claim 8, is characterized in that, the method for P type doping is High temperature diffusion doping or Implantation.
10. the preparation method of a kind of P type silicon substrate back side contact solar battery structure according to claim 8, is characterized in that, the method that the doping of P type adopts mask to block Implantation.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293606A (en) * | 2017-06-19 | 2017-10-24 | 浙江晶科能源有限公司 | P-type IBC battery structures and preparation method thereof |
| WO2020184705A1 (en) * | 2019-03-13 | 2020-09-17 | 東洋アルミニウム株式会社 | Method for manufacturing back contact-type solar cell |
| WO2020184706A1 (en) * | 2019-03-13 | 2020-09-17 | 東洋アルミニウム株式会社 | Method for producing back contact solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293606A (en) * | 2017-06-19 | 2017-10-24 | 浙江晶科能源有限公司 | P-type IBC battery structures and preparation method thereof |
| WO2020184705A1 (en) * | 2019-03-13 | 2020-09-17 | 東洋アルミニウム株式会社 | Method for manufacturing back contact-type solar cell |
| WO2020184706A1 (en) * | 2019-03-13 | 2020-09-17 | 東洋アルミニウム株式会社 | Method for producing back contact solar cell |
| JP2020150111A (en) * | 2019-03-13 | 2020-09-17 | 東洋アルミニウム株式会社 | Manufacturing method of back contact type solar cell |
| JP2020150110A (en) * | 2019-03-13 | 2020-09-17 | 東洋アルミニウム株式会社 | Manufacturing method of back contact type solar cell |
| CN113597682A (en) * | 2019-03-13 | 2021-11-02 | 东洋铝株式会社 | Method for manufacturing back contact type solar cell unit |
| CN113785405A (en) * | 2019-03-13 | 2021-12-10 | 东洋铝株式会社 | Method for manufacturing back contact type solar cell unit |
| JP7264674B2 (en) | 2019-03-13 | 2023-04-25 | 東洋アルミニウム株式会社 | Method for manufacturing back-contact solar cell |
| JP7264673B2 (en) | 2019-03-13 | 2023-04-25 | 東洋アルミニウム株式会社 | Method for manufacturing back-contact solar cell |
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