CN113555451A - Preparation method of transparent photoelectric device and transparent photoelectric device - Google Patents
Preparation method of transparent photoelectric device and transparent photoelectric device Download PDFInfo
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- CN113555451A CN113555451A CN202010327092.XA CN202010327092A CN113555451A CN 113555451 A CN113555451 A CN 113555451A CN 202010327092 A CN202010327092 A CN 202010327092A CN 113555451 A CN113555451 A CN 113555451A
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- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 103
- 239000002346 layers by function Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 28
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 230000005525 hole transport Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 230000005693 optoelectronics Effects 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- RYXHOMYVWAEKHL-UHFFFAOYSA-N astatine atom Chemical compound [At] RYXHOMYVWAEKHL-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a transparent photoelectric device and the transparent photoelectric device. The preparation method of the transparent photoelectric device comprises the following steps: forming a first transparent electrode layer on a transparent substrate; forming a photoelectric functional layer on one side of the first transparent electrode layer, which is far away from the transparent substrate; and forming a second transparent electrode layer on the side of the photoelectric functional layer, which is far away from the first transparent electrode layer. In the embodiment of the invention, the first transparent electrode and the second transparent electrode are formed on two sides of the photoelectric functional layer, so that the preparation of the photoelectric device with high transparency is realized.
Description
Technical Field
The invention relates to the field of photoelectric device preparation, in particular to a transparent photoelectric device and a preparation method thereof.
Background
With the development of socioeconomic, the demand of human beings on photoelectric devices is continuously increasing, and the scale of the domestic photovoltaic industry in China is over trillion at present, taking a solar cell as an example, and the demand is still in a high-speed development stage.
However, in the prior art, the opaqueness of the photoelectric devices makes such photoelectric devices incapable of being used in application scenes such as transparent solar glass outer walls, which greatly limits the application.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a transparent photoelectric device and the transparent photoelectric device, so as to prepare the photoelectric device with high transparency.
The embodiment of the invention provides a preparation method of a transparent photoelectric device, which comprises the following steps:
forming a first transparent electrode layer on a transparent substrate;
forming a photoelectric functional layer on one side of the first transparent electrode layer, which is far away from the transparent substrate;
and forming a second transparent electrode layer on one side of the photoelectric functional layer, which is far away from the first transparent electrode layer.
Optionally, the first transparent electrode layer and the second transparent electrode layer are prepared by a magnetron sputtering process.
Optionally, the material of the transparent electrode layer comprises indium tin oxide, and the ratio of indium oxide to zinc oxide in the indium zinc oxide is 50: 50-99: 1; or
The transparent electrode is made of indium zinc oxide, and the ratio of indium oxide to tin oxide in the indium tin oxide is 50: 50-99: 1;
wherein the transparent electrode is a first transparent electrode layer and/or a second transparent electrode layer.
Optionally, the power range of the magnetron sputtering is 50-300W.
Optionally, the pressure range of the magnetron sputtering is 0.34-0.8 Pa.
Optionally, the magnetron sputtering time range is 2.5-6.0 h.
The embodiment of the invention also provides a transparent photoelectric device which is prepared by applying the preparation method of the transparent photoelectric device in any embodiment.
Optionally, the transparent optoelectronic device comprises a photovoltaic cell, a light emitting diode and a photodetector.
Optionally, the photovoltaic cell further comprises:
a hole transport layer and an electron transport layer;
the hole transport layer and the electron transport layer are positioned between the first transparent electrode and the second transparent electrode, and the photoelectric function layer is positioned between the hole transport layer and the electron transport layer.
Optionally, the material of the photoelectric functional layer includes:
perovskite materials, organic or inorganic;
and the halogen material is doped in the photoelectric functional layer.
In the embodiment of the invention, the first transparent electrode and the second transparent electrode are formed on two sides of the photoelectric functional layer, so that the preparation of the photoelectric device with high transparency is realized.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a transparent photoelectric device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a transparent optoelectronic device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another transparent optoelectronic device provided in an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic flow chart of a method for manufacturing a transparent photoelectric device according to an embodiment of the present invention, and as shown in fig. 1, the method for manufacturing a transparent photoelectric device includes:
and S100, forming a first transparent electrode layer on the transparent substrate.
Firstly, a first transparent electrode is formed on a transparent substrate, and the transparent substrate is selected as a substrate material, so that the substrate made of the transparent material can meet the normal transmission of light, and the transparent substrate can be used as a support structure to ensure the smoothness of the surface of the first transparent electrode.
The transparent substrate may be a glass substrate, or may be a flexible substrate made of other transparent materials, and the material of the transparent substrate is not specifically limited in the embodiment of the present invention.
And S200, forming a photoelectric functional layer on the side, away from the transparent substrate, of the first transparent electrode layer.
The photoelectric functional layer is formed on the side, away from the transparent substrate, of the first transparent electrode, and absorbs light in the visible light wavelength range in sunlight and converts light energy into electric energy for the transparent photoelectric device to use. Another part of the infrared light passes through the photoelectric functional layer to reach the second transparent electrode layer, so that part of the light which is not utilized by the photoelectric functional layer passes through the second transparent electrode layer.
It should be noted that the function of the optoelectronic functional layer may be to convert optical energy into electrical energy, or to convert electrical energy into optical energy, and the function of the optoelectronic functional layer is limited according to the specific type of the optoelectronic device, and the specific function of the optoelectronic functional layer is not limited in the embodiment of the present invention.
And S300, forming a second transparent electrode layer on the side, away from the first transparent electrode layer, of the photoelectric functional layer.
The infrared light which is not absorbed by the photoelectric functional layer reaches the second transparent electrode layer through the photoelectric functional layer, the infrared light penetrates through the second transparent electrode layer, and the penetrated infrared light can be subsequently utilized.
In practical production application, the transparent photoelectric device is prepared by a preparation method of the transparent photoelectric device, such as a solar cell, because two electrodes of the solar cell are composed of a first transparent electrode layer and a second transparent electrode layer, namely, a cathode and an anode of the solar cell are transparent electrodes, a functional layer of the solar cell absorbs sunlight of a visible light part and converts light energy into electric energy, an infrared light part in the sunlight directly penetrates through the transparent cathode and the anode, the penetrated infrared light contains more than 50% of energy in the sunlight, the light energy of the penetrated infrared light can be recycled and converted into the electric energy, and the utilization rate of the sunlight is improved.
Optionally, the first transparent electrode layer and the second transparent electrode layer are prepared by a magnetron sputtering process.
The working principle of magnetron sputtering is that electrons collide with argon atoms in the process of flying to a substrate under the action of an electric field, so that the argon atoms are ionized to generate Ar positive ions and new electrons, the new electrons fly to the substrate, the Ar ions accelerate to fly to a cathode target under the action of the electric field and bombard the surface of the target at high energy, and the target is sputtered. In the sputtered particles, neutral target atoms or molecules are deposited on the substrate to form a thin film.
Wherein the magnetron sputtering power range is 50-300W, the magnetron sputtering air pressure range is 0.34-0.8 Pa, and the magnetron sputtering time range is 2.5-6.0 h.
Through the set power range, air pressure range and time range of the magnetron sputtering, the proper power, air pressure and time of the magnetron sputtering are selected through a plurality of times of test data, and then the first transparent electrode layer and the second transparent electrode layer are prepared, so that the first transparent electrode layer and the second transparent electrode layer are ensured to have higher light transmittance.
By adopting the magnetron sputtering process to prepare the first transparent electrode and the second transparent electrode, on the basis of ensuring that the first transparent electrode layer and the second transparent electrode layer are prepared in a normal temperature environment, the first transparent electrode layer and the second transparent electrode layer have better light transmittance, and the first transparent electrode layer and the second transparent electrode layer are applied to the transparent photoelectric device.
Optionally, the material of the transparent electrode layer comprises indium tin oxide, and the ratio of indium oxide to zinc oxide in the indium zinc oxide is 50: 50-99: 1; or the transparent electrode is made of indium zinc oxide, and the ratio of indium oxide to tin oxide in the indium tin oxide is 50: 50-99: 1; the transparent electrode is a first transparent electrode layer and/or a second transparent electrode layer.
It should be noted that the ratio of indium oxide to zinc oxide in indium zinc oxide may be set to 80:20, or the ratio of indium oxide to tin oxide in indium tin oxide may be set to 90:10, and the transparent electrode layer prepared by the magnetron sputtering process has better conductivity and transparency.
According to the technical scheme, the transparent photoelectric material is prepared and formed by preparing the first transparent electrode layer and the second transparent electrode layer and arranging the photoelectric functional layer between the first transparent electrode layer and the second transparent electrode layer, wherein the photoelectric functional layer absorbs light energy and converts the light energy into electric energy on one hand, and on the other hand, solar energy which is not absorbed by the photoelectric functional layer can penetrate through the first transparent electrode and the second transparent electrode so as to be recycled later, and the transparent photoelectric device is applied to transparent objects such as glass.
On the basis of the above embodiments, the embodiment of the present invention further provides a transparent photoelectric device, and the transparent photoelectric device is manufactured by applying the method for manufacturing the transparent photoelectric device according to any of the above embodiments.
Optionally, the transparent optoelectronic device comprises a photocell, a light emitting diode, and a photodetector.
It should be noted that the transparent photoelectric device can be a photoelectric cell, a light emitting diode or a photodetector, or other photoelectric devices, the embodiment of the present invention is specifically limited to the transparent photoelectric device,
optionally, fig. 2 is a schematic structural diagram of a photovoltaic cell provided in an embodiment of the present invention, and as shown in fig. 2, the photovoltaic cell further includes: a hole transport layer 50 and an electron transport layer 30; the hole transport layer 50 and the electron transport layer 30 are located between the first transparent electrode layer 20 and the second transparent electrode layer 60, and the photoelectric functional layer 40 is located between the hole transport layer 50 and the electron transport layer 30.
As shown in fig. 2, fig. 2 provides a schematic structural diagram of a photovoltaic cell in which a first transparent electrode layer 20 and a second transparent electrode layer 60 are prepared by the method for preparing a transparent photovoltaic device shown in fig. 1, and the photovoltaic cell further includes a hole transport layer 50 and an electron transport layer 30. Since the hole transport layer 50 and the electron transport layer 30 are included between the first transparent electrode layer 20 and the second transparent electrode layer 60, since the electron transport layer 30 and the hole transport layer 50 are thin, the first transparent electrode layer 20 and the second transparent electrode layer 60 prepared by using the above embodiment do not easily damage the electron transport layer 30 and the hole transport layer 50, and the first transparent electrode layer 20 and the second transparent electrode layer 60 have good light transmittance.
Further, since the photovoltaic cell can be excited to generate electrons and holes under the irradiation of sunlight, the electrons move and generate holes, and the photoelectric functional layer 40 is disposed between the electron transport layer 30 and the hole transport layer 50, when the photovoltaic cell is irradiated by sunlight, the photoelectric functional layer 40 absorbs part of light energy and converts the light energy into electric energy, and on the other hand, solar energy which is not absorbed by the photoelectric functional layer 40 directly penetrates through the photovoltaic cell.
It should be noted that the photoelectric functional layer 40 may be a light absorbing layer for converting light energy into electric energy and transmitting a part of unabsorbed light, and the photoelectric functional layer 40 may also be other types of functions, and the embodiment of the present invention does not limit the specific function of the photoelectric functional layer 40.
Further, fig. 2 exemplarily expresses a schematic structure of a formal photovoltaic cell, and as shown in fig. 2, the formal photovoltaic cell includes a transparent substrate 10, a first transparent electrode layer 20, an electron transport layer 30, a photovoltaic functional layer 40, a hole transport layer 50, and a second transparent electrode 60, which are sequentially stacked. Fig. 3 schematically shows a structure of a trans-type photovoltaic cell including a transparent substrate 10, a first transparent electrode layer 20, a hole transport layer 50, a photovoltaic functional layer 40, an electron transport layer 30, and a second transparent electrode 60, which are sequentially stacked.
Optionally, the material of the photoelectric functional layer 40 includes: perovskite materials, organic or inorganic; and the halogen material is doped in the photoelectric functional layer.
For conventional perovskite photovoltaic cells, the photovoltaic functional layer 40 absorbs sunlight in the visible range and converts light energy into electrical energy, passing through sunlight in the infrared and ultraviolet ranges. Since the energy of infrared light in sunlight accounts for 50% of the total energy of sunlight, and the conventional perovskite photovoltaic cell cannot be utilized, the wavelength range of light absorbed by the photoelectric functional layer 40 is changed by adding a halogen material to the material of the photoelectric functional layer, so that more sunlight is utilized by the photoelectric functional layer. And because the perovskite photocell has the advantages of high efficiency, low cost, simple preparation process and the like, the forbidden bandwidth of the perovskite material is 1.63ev, and the cut-off wavelength is 760nm, the material of the photoelectric functional layer 40 of the photocell is generally selected to be the perovskite material.
It should be noted that, by adding halogen materials into the materials of the photoelectric functional layer to perform doping regulation and control on the photoelectric functional layer of the perovskite photocell, the perovskite light absorption layer with the forbidden bandwidth of 1.59 ev-2.3 ev can be obtained, so that the cut-off wavelength of the perovskite light absorption layer is regulated to be 540 nm-780 nm, the cut-off wavelength range of the perovskite light absorption layer is enlarged, and more solar energy can be utilized.
Furthermore, the halogen material comprises five elements of fluorine element, chlorine element, bromine element, iodine element and astatine element, and the metal halide perovskite material formed by doping the halogen material in the perovskite material has the functions of adjustable spectral absorption and high carrier mobility.
It should be noted that the material of the photoelectric functional layer 40 may also be an organic substance or an inorganic substance, wherein the inorganic substance may be, for example, silicon, cadmium sulfide, or cadmium telluride, and the material of the photoelectric functional layer is not specifically limited in the embodiments of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method of fabricating a transparent photovoltaic device, comprising:
forming a first transparent electrode layer on a transparent substrate;
forming a photoelectric functional layer on one side of the first transparent electrode layer, which is far away from the transparent substrate;
and forming a second transparent electrode layer on one side of the photoelectric functional layer, which is far away from the first transparent electrode layer.
2. The method according to claim 1, wherein the first transparent electrode layer and the second transparent electrode layer are prepared by magnetron sputtering process.
3. A method of fabricating a transparent optoelectronic device according to claim 1, wherein:
the transparent electrode layer is made of indium tin oxide, and the ratio of indium oxide to zinc oxide in the indium zinc oxide is 50: 50-99: 1; or
The material of the transparent electrode comprises indium zinc oxide, and the proportion range of indium oxide and tin oxide in the indium tin oxide is 50: 50-99: 1;
wherein the transparent electrode is a first transparent electrode layer and/or a second transparent electrode layer.
4. The method for preparing the transparent photoelectric device according to claim 2, wherein the magnetron sputtering power is in a range of 50-300W.
5. The method for preparing the transparent photoelectric device according to claim 1, wherein the pressure of the magnetron sputtering is in a range of 0.34 to 0.8 Pa.
6. The method for preparing the transparent photoelectric device according to claim 1, wherein the magnetron sputtering time is in a range of 2.5 to 6.0 hours.
7. A transparent photoelectric device produced by the method for producing a transparent photoelectric device according to any one of claims 1 to 6.
8. The transparent optoelectronic device according to claim 7, wherein the transparent optoelectronic device comprises a photovoltaic cell, a light emitting diode, and a photodetector.
9. The transparent optoelectronic device according to claim 8, wherein the optoelectronic cell further comprises:
a hole transport layer and an electron transport layer;
the hole transport layer and the electron transport layer are located between the first transparent electrode layer and the second transparent electrode layer, and the photoelectric functional layer is located between the hole transport layer and the electron transport layer.
10. The transparent optoelectronic device according to claim 9, wherein the material of the optoelectronic functional layer comprises:
perovskite materials, organic or inorganic;
and the halogen material is doped in the photoelectric functional layer.
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