CN107749432A - A kind of CdTe thin film solar cell and preparation method thereof - Google Patents
A kind of CdTe thin film solar cell and preparation method thereof Download PDFInfo
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 51
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 69
- 230000005540 biological transmission Effects 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims abstract description 15
- 229910007709 ZnTe Inorganic materials 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 11
- 210000001142 back Anatomy 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 238000005092 sublimation method Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract description 2
- 238000007761 roller coating Methods 0.000 description 14
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- ZERULLAPCVRMCO-UHFFFAOYSA-N Dipropyl sulfide Chemical compound CCCSCCC ZERULLAPCVRMCO-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of CdTe thin film solar cell and preparation method thereof, the structure of the CdTe thin film solar cell includes substrate glassy layer, CdS Window layers, CdTe light absorbing layers, back contact and dorsum electrode layer successively from bottom to top, it is characterised in that：CuI hole transmission layers are set between the CdTe light absorbing layers and back contact；The substrate glassy layer is FTO Conducting Glass, and its material is the SnO of doping F elements2；The material of back contact is doping Cu ZnTe；Dorsum electrode layer is Cu/Ni composite back electrode layers, and its material is Cu and Ni.One layer of CuI hole transmission layer is added in traditional CdTe film battery, CuI is as a kind of p types semi-conducting material, with good cavity transmission ability, the transmission in inside battery hole can be accelerated, reduce compound, photoelectric current is improved, is finally reached the purpose for improving CdTe film battery photoelectric transformation efficiency.
Description
Technical field
The present invention relates to a kind of CdTe thin film solar cell and preparation method thereof, belongs to thin film solar cell technologies neck
Domain.
Background technology
With the fast development of social economy, environmental pollution and the major test that energy shortage has been that human survival faces,
Finding alternative, clean energy resource becomes the important means for solving crisis.In numerous new energy, solar energy is with its clean nothing
The advantages such as pollution, rich reserves, become the leading army of new energy.
The utilization of solar energy mainly prepares solar cell, wherein compound film solar cell as the second generation too
Positive energy battery, has cost low, easily mass produces, and physical and chemical performance is stable, the advantage such as conversion efficiency height, becomes and studies weight
Point, and paid close attention to by many research structures and company.
CdTe energy gaps about 1.5eV, it is matched preferably with solar spectrum, research find the films of 2 μ m-thicks to it is ultraviolet-can
See that the absorption conversion of the sunshine in region is good light absorbent, preparation technology is more, possesses completely as the sun up to 99%
The condition of energy battery light absorbing material.At present, the efficiency based on CdTe film battery prepared in laboratory more than 22%, into
For " new lover " of solar cell industry.Traditional CdTe film battery mainly by Conducting Glass, CdS Window layers,
CdTe absorbed layers and metallic back electrode layer are formed, and the battery structure is simple, and preparation technology is also more ripe.But for this
, the drawbacks of larger be present in the battery of structure：After electron-hole separation, due to being limited by transmission speed so that carrier is multiple
Probability increase is closed, causes damage, influences the further raising of battery efficiency.
The content of the invention
In view of this, in view of the shortcomings of the prior art, the present invention provides a kind of CdTe thin film solar cell and its making
Method, it is one layer of CuI hole transmission layer of addition in traditional CdTe film battery, and CuI is as a kind of p-type semiconductor material
Material, has good cavity transmission ability, can accelerate the transmission in inside battery hole, and reduction is compound, improves photoelectric current, finally reaches
To the purpose for improving CdTe film battery photoelectric transformation efficiency.
To solve above technical problem, technical scheme employs a kind of CdTe thin film solar cell, and it is tied
Structure includes substrate glassy layer, CdS Window layers, CdTe light absorbing layers, back contact and dorsum electrode layer, its feature successively from bottom to top
It is：CuI hole transmission layers are set between the CdTe light absorbing layers and back contact；The substrate glassy layer is FTO conductive
Glass substrate, its material are the SnO of doping F elements2；The material of back contact is doping Cu ZnTe；Dorsum electrode layer is Cu/Ni
Composite back electrode layer, its material are Cu and Ni.
Further, the thickness of glass is 2~2.5mm in the FTO Conducting Glass, the thickness of conducting film for 50~
200nm。
Further, the thickness of the CdS Window layers is 80~250nm, and the thickness of CdTe light absorbing layers is 2.5~5 μm.
Further, the thickness of the CuI hole transmission layers is 20~50nm.
Further, the thickness of the back contact is 50~150nm, and the thickness of dorsum electrode layer is 200~400nm.
Simultaneously present invention also offers a kind of preparation method of CdTe thin film solar cell, it comprises the following steps：
(1) FTO electro-conductive glass is prepared：F SnO is adulterated in deposition on glass using magnetron sputtering method2, in glass surface shape
Into conducting film, the thickness of glass is 2~2.5mm, and the thickness of conducting film is 50~200nm；
(2) CdS Window layers are being formed using close spaced sublimation method deposition CdS on FTO electro-conductive glass made from step (1),
Distance 2-4mm between evaporation source and substrate；Using two-part plated film, 500-550 DEG C of first paragraph source temperature, underlayer temperature
460-480 DEG C, the plated film 5-10s times；550-600 DEG C of second segment source temperature, 480-500 DEG C of underlayer temperature, plated film time
5-15s, the film thickness finally obtained are 80-250nm, and film causes dense and uniform；
(3) CdTe light absorbing layers, evaporation source and substrate are formed using close spaced sublimation method deposition CdTe in CdS Window layers
Between distance 2-4mm, using three-stage plated film, 500-550 DEG C of first paragraph source temperature, 460-480 DEG C of underlayer temperature, plated film
Time 1-2min；550-600 DEG C of second segment source temperature, 480-500 DEG C of underlayer temperature, plated film time 1-2min；3rd section
600-650 DEG C of source temperature, 500-550 DEG C of underlayer temperature, plated film time 1-3min, 2.5-5 μm of film thickness；
(4) CdCl is coated on CdTe light absorbing layers2Made annealing treatment after methanol solution, annealing temperature 380~450
DEG C, 15~30min of annealing time；CdCl2Annealing improves the uniformity and recrystallization property of CdS/CdTe films, reaches P
Type enhancing effect；
(5) CuI solution is coated on CdTe light absorbing layers after annealing and prepares CuI hole transmission layers；The concentration of CuI solution
For 0.05-0.3mol/L, preparation method is：Under room temperature condition (25 ± 2 DEG C), by dipropyl sulfide and chlorobenzene vol=1 by volume
~5:After 5~35 mixing, CuI dissolvings are configured in this mixed liquor and formed；
The preparation of CuI hole transmission layers can use following two methods：
A. roll coating process：CuI solution is dispersed in film surface, pressure, roller coating number (1 during by adjusting roller coating
~3 times) and solution concentration carry out the regulation of film thickness and uniformity；Pressure is bigger during roller coating, and roller coating number is fewer, and solution is dense
Spend smaller, film thickness is thinner, and vice versa；
B. spin coating method：Likewise, CuI solution is dispersed in film surface, then by controlling spin coating machine speed (1000
~3000r/min), spin coating grade (1~3) and spin coating time (10-60s) and solution concentration reach the regulation of film thickness；
The thickness of hole transport layer finally obtained is about 20-50nm, complete CuI layers preparation, and by whole hull cell drying (70~
90℃)。
(6) ZnTe for depositing doping Cu on CuI hole transmission layers using magnetron sputtering method forms back contact, thickness control
System is in the range of 50-150nm；
(7) preparation of Cu/Ni composite back electrode layers is carried out using magnetron sputtering method：Cu electricity is sputtered first on back contact
Pole, sputtering time 30-100s；The preparation of Ni layers, the thickness of sputtering time 30-100s, Cu/Ni composite back electrode layer are carried out again
200-400nm。
In the present invention, laser scoring can be carried out to battery sample according to the actual requirements, and then realizes that battery is connected, most
The preparation of cadmium telluride thin-film battery is completed by packaging technology afterwards.
Compared with prior art, the present invention has prepared the CdTe thin film solar-electricity with good cavity transmission ability
Pond, the introducing of CuI hole transmission layers, it will accelerate the transmission of hole in the film, enhancing electron reflection and hole collection ability,
Carrier recombination is reduced, and then improves the purpose of cell photoelectric performance.The battery for possessing structure of the present invention has more preferably
Electron reflection and hole collection ability, can reduce that electronics is compound, obtain higher battery conversion efficiency；Meanwhile in hole transport
Layer, back contact, back electrode this three structure in, have a participation of Cu elements, the progressive design of this same element,
The bond strength between three kinds of films can be strengthened, reduce the power loss that boundary defect is brought, and then the photoelectricity for improving battery turns
Change efficiency.In addition preparation method of the present invention is simple to operate, effective, and can prepare that thickness is uniform, and the thin layer of multi-thickness can be very
Good realizes process modification and industrialization.
Brief description of the drawings
Fig. 1 is the structural representation of CdTe thin film solar cell provided by the invention；
Fig. 2 is the process chart of CdTe thin film method for manufacturing solar battery of the present invention.
Embodiment
In order that those skilled in the art more fully understands technical scheme, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
Referring to Fig. 1, the invention provides a kind of CdTe thin film solar cell, its structure includes successively from bottom to top
FTO Conducting Glass layer 1, CdS Window layers 2, CdTe light absorbing layers 3, CuI hole transmission layers 4, the and of Cu ︰ ZnTe back contacts 5
Cu/Ni composite back electrodes layer 6, the thickness of glass is 2~2.5mm wherein in FTO Conducting Glass, and the thickness of conducting film is 50
~200nm；The thickness of CdS Window layers is 80~250nm；The thickness of CdTe light absorbing layers is 2.5~5 μm；CuI hole transmission layers
Thickness be 20~50nm；The thickness of Cu ︰ ZnTe back contacts is 50~150nm；The thickness of Cu/Ni composite back electrode layers is
200~400nm.
Referring to Fig. 2, present invention also offers a kind of preparation method of CdTe thin film solar cell, and it includes following step
Suddenly：
The preparation of 1.FTO electro-conductive glass
The Conducting Glass being related in the present invention, using mixing F:SnO2Transparent conducting glass, thickness of glass 2-2.5mm,
Conductive film thickness is 50-200nm, is prepared using magnetron sputtering method.Glass size can adjust according to the actual requirements.Electro-conductive glass
Cleaning can be using ultrasonic wave, spray or round brush by the way of, the reagent that is used in cleaning has absolute ethyl alcohol, acetone, and distills
Water, to remove the impurity of glass surface and oil stain or dirt, (60-100 DEG C) is dried after glass cleaning is clean, is directly used in
Back segment coating process operates (or being stored in dustless space with standby).
The preparation of 2.CdS Window layers
The present invention carries out the preparation of CdS Window layers using close spaced sublimation method (CSS).Distance 2- between evaporation source and substrate
4mm；Using two-part plated film, 500-550 DEG C of first paragraph source temperature, 460-480 DEG C of underlayer temperature, plated film 5-10s times；
550-600 DEG C of second segment source temperature, 480-500 DEG C of underlayer temperature, plated film time 5-15s, the film thickness finally obtained
For 80-250nm, film causes dense and uniform.
The preparation of 3.CdTe absorbed layers
The present invention carries out the preparation of CdTe absorbed layers using CSS, and the distance 2-4mm between evaporation source and substrate is thin to ensure
The uniformity of film, three-stage coating process is used in of the invention：500-550 DEG C of first paragraph source temperature, underlayer temperature 460-
480 DEG C, plated film time 1-2min；550-600 DEG C of second segment source temperature, 480-500 DEG C of underlayer temperature, plated film time 1-
2min；3rd section of 600-650 DEG C of source temperature, 500-550 DEG C of underlayer temperature, plated film time 1-3min, film thickness 2.5-5
μm。
4.CdCl2Processing
The present invention uses CdCl2Methanol solution carries out the activation process of CdS/CdTe layers, solution concentration selection 0.1-
0.25mol/L, using roller bearing cladding process, with coating method back and forth, it is ensured that the equal load C dCl of film surface2；Then activated
The annealing of layer, 380-450 DEG C of annealing temperature, time 15-30min, with this improve the uniformities of CdS/CdTe films with again
Crystallinity, reach p-type enhancing effect.
It is prepared by 5.CuI hole transmission layers
The present invention uses hole transmission layers of the CuI as battery, improves inside battery electron reflection, the collection in hole and biography
Movement Capabilities.The configuration of CuI stostes is carried out by this：Under room temperature condition (25 ± 2 DEG C), by dipropyl sulfide and chlorobenzene vol by volume
=1~5:5~35 mixing, by CuI dissolvings in this mixed liquor, it is configured to 0.05-0.3mol/L solution.CuI cavitation layers
Preparation can use following several method：
A. roll coating process：CuI stostes are dispersed in film surface, pressure, roller coating number (1 during by adjusting roller coating
~3 times) and solution concentration carry out the regulation of film thickness and uniformity；Pressure is bigger during roller coating, and roller coating number is fewer, and solution is dense
Spend smaller, film thickness is thinner, and vice versa；
B. spin coating method：Likewise, CuI stostes are dispersed in film surface, then by controlling spin coating machine speed (1000
~3000r/min), spin coating grade (1~3) and spin coating time (10-60s) and solution concentration reach the regulation of film thickness；
The thickness of hole transport layer finally obtained is about 20-50nm, complete CuI layers preparation, and by whole hull cell drying (70~
90℃)。
6.Cu:The preparation of ZnTe back contacts
Magnetron sputtering method is used in the present invention, carries out Cu:The film for preparing whole back contact of ZnTe back contacts is thick
Degree control possesses preferable uniformity of film in the range of 50-150nm.
The preparation of 7.Cu/Ni composite back electrode layers
The present invention carries out the preparation of Cu/Ni composite back electrode layers using magnetron sputtering method.First in CuI hole transmission layers
Upper sputtering Cu electrodes, sputtering time 30-100s；The preparation of Ni layers, sputtering time 30-100s, Cu/Ni composite back electrode are carried out again
The thickness 200-400nm of layer.
8. in the present invention, laser scoring can be carried out to battery sample according to the actual requirements, and then realize that battery is connected,
The preparation of cadmium telluride thin-film battery is finally completed by packaging technology.
Embodiment 1：
(1) cutting and cleaning of electro-conductive glass
With thickness 2.2mm, conductive film thickness is about that 100nm mixes F:SnO2Transparent conducting glass is substrate, glass size
4cm × 6cm, cleaned, glass is cleaned with absolute ethyl alcohol, acetone, distilled water respectively, glass cleaning is clean using ultrasonic wave
It is dried afterwards under the conditions of 60 DEG C.
(2) preparation of CdS Window layers and CdTe absorbed layers
The distance adjusted between evaporation source and substrate is 2-3mm；The preparation of CdS layer is carried out first：First paragraph source temperature
550 DEG C, 480 DEG C of underlayer temperature, the plated film 8s times；550 DEG C of second segment source temperature, 500 DEG C of underlayer temperature, plated film time
10s；Then the preparation of CdTe layer is carried out：500 DEG C of first paragraph source temperature, 480 DEG C of underlayer temperature, plated film time 1min；The
550 DEG C of dual circulation source temperature, 500 DEG C of underlayer temperature, plated film time 1min；3rd section of 600 DEG C of source temperature, underlayer temperature
500 DEG C, sample is taken out after plated film time 2min Slow coolings.
(3)CdCl2Processing
Prepare 0.1mol/L CdCl2Methanol solution, the activation process of CdS/CdTe layers is carried out, temperature is 400 during annealing
DEG C, time 20min, the uniformity of CdS/CdTe films and recrystallization property are improved with this.
(4) prepared by CuI hole transmission layers
Under room temperature condition (25 DEG C), with volume ratio vol=1:10 dipropyl sulfide, chlorobenzene are dispersion liquid, prepare 0.15ol/
L CuI solution, the preparation of CuI hole transmission layer preparations is carried out by sol evenning machine：Under 1000r/min speed, spin coating time
Keep 10s；Under 2000r/min speed, spin coating time keeps 10s, the preparation of CuI hole transmission layers is completed, in 80 DEG C of bars
After being dried under part, then carry out subsequent technique.
(5)Cu:The preparation of ZnTe back contacts and Cu/Ni composite back electrode layers
Cu is finally carried out using magnetron sputtering method respectively:The preparation of ZnTe back contacts and Cu/Ni composite back electrode layers, it is thick
Degree controls in 100nm, 300nm or so respectively.
Embodiment 2：
Cutting and cleaning, CdS Window layer and CdTe absorbed layer of the battery sample being related in embodiment 2 in electro-conductive glass
Preparation, CdCl2Processing, Cu:Preparing for Ni composite back electrode layers is consistent in this four techniques with embodiment 1, is distinguished
In CuI hole transmission layers prepare preparation on, it is specific as follows：
The concentration of CuI solution still uses the 0.15mol/L in embodiment 1, in example 2, is carried out using roll coating process
The preparation of CuI hole transmission layers：Appropriate CuI stostes are dispersed in substrate film surface as homogeneously as possible, adjust roller coating pressure
Power, and fixation pressure；Then carry out roller coating, unidirectionally carry out during roller coating, forbid roller coating back and forth；Roller coating number, it is complete after roller coating 2 times
Into the preparation of film, after being dried under the conditions of 80 DEG C, then later processing operation is carried out.
Embodiment 3：
Cutting and cleaning, CdS Window layer and CdTe absorbed layer of the battery sample being related in embodiment 3 in electro-conductive glass
Preparation, CdCl2Processing, Cu:Preparing for Ni composite back electrode layers is consistent in this four techniques with embodiment 1, is distinguished
It is traditional battery knot in being free of hole transmission layer in the preparation that the battery is prepared without CuI hole transmission layers, battery structure
Structure, the embodiment 3 are used as blank control group.
Finally, in three embodiments, using identical process conditions and parameter, laser scoring is carried out to battery sample,
The preparation of cadmium telluride thin-film battery is finally completed by packaging technology.
After testing sample corresponding to three embodiments, find：Compared to battery knot of the tradition without hole transmission layer
Structure, the efficiency for possessing the battery sample of CuI hole transmission layers have a certain upgrade；Also, preparation technology is to hole transmission layer
Quality (film thickness, uniformity) has considerable influence, the final efficiency for influenceing battery.In three embodiments, what embodiment 1 was related to
Sample shows relatively optimal battery efficiency, and design parameter see the table below.
| Embodiment | JSC/mA·cm-2 | Voc/V | FF | Eff/% |
| Embodiment 1 | 24.82 | 0.73 | 0.70 | 12.68 |
| Embodiment 2 | 23.52 | 0.73 | 0.69 | 11.84 |
| Embodiment 3 | 22.95 | 0.74 | 0.62 | 10.53 |
It should be pointed out that above-mentioned embodiment is not construed as limitation of the present invention, protection scope of the present invention should
It is defined by claim limited range.For those skilled in the art, do not departing from the present invention's
In spirit and scope, some improvements and modifications can also be made, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of CdTe thin film solar cell, its structure includes substrate glassy layer, CdS Window layers, CdTe successively from bottom to top
Light absorbing layer, back contact and dorsum electrode layer, it is characterised in that：CuI is set between the CdTe light absorbing layers and back contact
Hole transmission layer；The substrate glassy layer is FTO Conducting Glass, and its material is the SnO of doping F elements2；Back contact
Material is doping Cu ZnTe；Dorsum electrode layer is Cu/Ni composite back electrode layers, and its material is Cu and Ni.
A kind of 2. CdTe thin film solar cell according to claim 1, it is characterised in that：The FTO electro-conductive glass lining
The thickness of glass is 2~2.5mm on bottom, and the thickness of conducting film is 50~200nm.
A kind of 3. CdTe thin film solar cell according to claim 1, it is characterised in that：The thickness of the CdS Window layers
Spend for 80~250nm, the thickness of CdTe light absorbing layers is 2.5~5 μm.
A kind of 4. CdTe thin film solar cell according to claim 1, it is characterised in that：The CuI hole transmission layers
Thickness be 20~50nm.
A kind of 5. CdTe thin film solar cell according to claim 1, it is characterised in that：The thickness of the back contact
For 50~150nm, the thickness of dorsum electrode layer is 200~400nm.
A kind of 6. preparation method of CdTe thin film solar cell, it is characterised in that：Comprise the following steps：
(1) FTO electro-conductive glass is prepared：F SnO is adulterated in deposition on glass using magnetron sputtering method2, formed and led in glass surface
Electrolemma, the thickness of glass is 2~2.5mm, and the thickness of conducting film is 50~200nm；
(2) CdS Window layers are being formed using close spaced sublimation method deposition CdS on FTO electro-conductive glass made from step (1)；
(3) CdTe light absorbing layers are formed using close spaced sublimation method deposition CdTe in CdS Window layers；
(4) CdCl is coated on CdTe light absorbing layers2Made annealing treatment, 380~450 DEG C of annealing temperature, annealed after methanol solution
15~30min of time；
(5) CuI solution is coated on CdTe light absorbing layers after annealing and prepares CuI hole transmission layers；
(6) ZnTe for depositing doping Cu on CuI hole transmission layers using magnetron sputtering method forms back contact；
(7) Cu and Ni is deposited on back contact using magnetron sputtering method and forms Cu/Ni composite back electrode layers.
A kind of 7. preparation method of CdTe thin film solar cell according to claim 6, it is characterised in that：The step
(2) preparation of CdS Window layers uses close spaced sublimation method, the distance 2-4mm between evaporation source and substrate；Using two-part plated film,
500-550 DEG C of first paragraph source temperature, 460-480 DEG C of underlayer temperature, plated film 5-10s times；Second segment source temperature
550-600 DEG C, 480-500 DEG C of underlayer temperature, plated film time 5-15s.
A kind of 8. preparation method of CdTe thin film solar cell according to claim 6, it is characterised in that：The step
(3) preparation of CdTe light absorbing layers uses close spaced sublimation method, the distance 2-4mm between evaporation source and substrate, is plated using three-stage
Film, 500-550 DEG C of first paragraph source temperature, 460-480 DEG C of underlayer temperature, plated film time 1-2min；Second segment evaporation source temperature
550-600 DEG C of degree, 480-500 DEG C of underlayer temperature, plated film time 1-2min；3rd section of 600-650 DEG C of source temperature, substrate temperature
500-550 DEG C of degree, plated film time 1-3min.
A kind of 9. preparation method of CdTe thin film solar cell according to claim 6, it is characterised in that：The step
(5) concentration of CuI solution is 0.05-0.3mol/L in.
A kind of 10. preparation method of CdTe thin film solar cell according to claim 6, it is characterised in that：The step
Suddenly the preparation method of CuI hole transmission layers uses roll coating process or spin coating method in (5).
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| CN110544729A (en) * | 2019-08-09 | 2019-12-06 | 中山瑞科新能源有限公司 | CdTe double-sided solar cell and preparation method thereof |
| CN110854239A (en) * | 2019-11-26 | 2020-02-28 | 龙焱能源科技（杭州）有限公司 | Thin film solar cell and manufacturing method thereof |
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| CN104737254A (en) * | 2012-09-12 | 2015-06-24 | 韩国化学研究院 | Solar cell having light-absorbing structure |
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Application publication date: 20180302 |