CN107394044A - A kind of perovskite solar cell of high-performance conductive electrode and electron transfer layer and preparation method thereof - Google Patents
A kind of perovskite solar cell of high-performance conductive electrode and electron transfer layer and preparation method thereof Download PDFInfo
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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Abstract
The invention discloses perovskite solar cell of a kind of high-performance conductive electrode and electron transfer layer and preparation method thereof, including glass substrate and the transparent conductive oxide electrode, metal oxide electron transport layer, perovskite light absorbing layer, hole transmission layer, the metal electrode that are cascading on a glass substrate, the transparent conductive oxide electrode and metal oxide electron transport layer are formed using RF magnetron co-sputtering method deposition.Present invention process is simple, uniformity is good, reproducible and perovskite efficiency of solar cell is higher.
Description
Technical field
The present invention relates to photovoltaic art, and in particular to a kind of perovskite of high-performance conductive electrode and electron transfer layer
The preparation method of solar cell.
Background technology
Caused environmental pollution, the mankind are urgently to be resolved hurrily with the excessive use to fossil energy and in use
It is the novel energy that sustainable development utilizes, and photovoltaic is then wherein most prospect energy strategy.Improve solar energy
The electricity conversion of battery is come to reduce photovoltaic generation cost be one of core research topic of current photovoltaic art.It is wherein organic
The halogen perovskite material of inorganic hybridization was used in solar cell first in 2009, in a few years, its photoelectric conversion effect
Rate from 3.8% at that time ascend to heaven by now be higher than 22%.The efficiency of perovskite solar cell has surmounted organic solar electricity
Pond, it is expected to reach monocrystaline silicon solar cell level.As the record of perovskite solar battery efficiency is constantly refreshed, scientific research work
Author starts to focus more on the stability of perovskite battery, service life, prepares cost, the replacement of heavy metal element lead and big face
Preparation of product flexible device etc..
Most typical absorbed layer is organic metal trihalid ABX in perovskite solar cell3(A:CH3NH+ 3CH3CH2NH+ 3
Or HN=CHNH+ 3Deng；B:Pb2+Or Sn2+；X:I, Br or Cl), a primary structure of perovskite solar cell divides plane different
Matter junction structure type, it is corresponding just to put and be inverted two kinds of structure devices.It is substrate/negative electrode/electric transmission generally preparation order
The perovskite solar cell of layer/perovskite absorbed layer/hole transmission layer/anode referred to as just puts structure devices, otherwise to be inverted knot
Structure device.In order to improve the efficiency of perovskite solar cell and life-span, would generally be introduced between perovskite absorbed layer and electrode
Various auxiliary layers, transport layer prevent exciton in the compound quenching of electrode interface, the effect of electron transfer layer be improve electron injection and
Stop hole.In the high efficiency perovskite solar cell reported, titanium dioxide turns into utilization rate highest electric transmission
Layer material, its basic role are to form electronic selection with perovskite absorbed layer to contact, and meet level-density parameter, improve light induced electron
Extraction efficiency, and effectively stop that hole migrates to cathode direction, by controlling electron transfer layer and hole transmission layer respectively
Thickness carrys out transmission of the equilbrium carrier in each layer, so as to avoid influence of the charge accumulated to device lifetime.
In perovskite solar cell, electron transfer layer shortens light except being advantageous to the growth of perovskite crystal
Raw electronics, to the migration distance n-type semiconductor, can effectively reduce recombination rate, improve the effect of solar cell out of perovskite body
Rate.As can be seen here, electron transfer layer is vital for perovskite solar cell.Although with based on metal oxygen
The perovskite solar cell of compound electron transfer layer obtains higher electricity conversion, but perovskite solar cell has one
Unavoidable shortcoming is its stability.With regard to metal oxide TiO2For the solar cell of electron transfer layer, by not
TiO prepared by synsedimentary method2The substantial amounts of volume defect density of states and interface charge trap density in film be present, cause device
It can decay rapidly, its Declining cause is mainly due to TiO2The desorption of surface molecular oxygen.It is understood that in metal oxide half
In conductor, many Lacking oxygens in its surface especially be present, these deep energy level defects can adsorb oxygen molecule in air, so as to be formed
Charge transfer complex causes device unstable.Many researchers report, by that can strengthen electron transfer layer surface modification
The performance of perovskite solar cell.Henry etc. proposes fullerene C60Electron transfer layer TiO can be regulated and controled2And it can effectively extract light
Raw electric charge.Liu etc. points out lithium doping TiO2Charge trap density can be dropped to, improves battery performance.The it is proposeds such as Leijtens understand
The caused dedining mechanism of absorption, the TiO under ultraviolet excitation2Hole in valence band and the electronics on oxygen adsorption site are compound, inhale
Attached oxygen molecule is released, and the free electron and a positively charged Lacking oxygen formed on conduction band, free electron is quickly
With the hole-recombination being had more than needed on hole mobile material.Because the state energy level of the defects of caused by the Lacking oxygen left is about at conduction band bottom
At following 1eV, light induced electron can be transferred in these deep defect states by the vibration level of molecule, and this part electronics can not be again
Transit on the conduction band of electron transfer layer, final result can only be with the hole-recombination of inside or by local to these surface defects
In, cause the short circuit current of device to be remarkably decreased.
One of metal oxide electron transport layer area research focus of interest is to reduce the film defects density of states at present
With reduce surface charge trap density, to improve its stability.Make a general survey of current research achievement, transparent conductive electrode and electric transmission
Layer combines category hetero-junctions laminated construction, it means that two of which film contacts area has potential barrier, influences carrier transport.Together
When, because two kinds of material lattice mismatches introduce a large amount of charge traps, so as to lower the short-circuit current density of perovskite solar cell,
Influence cell photoelectric transformation efficiency.However, at present reported on transparent conductive electrode and the preparation method of electron transfer layer
Its defect state density and surface charge trap density can not be effectively reduced.Therefore, simple technique, low cost, large area are realized
And the controllable preparation of high efficiency perovskite solar cell is one of important topic currently faced.
The content of the invention
It is an object of the invention to provide a kind of perovskite sun of high-performance conductive electrode and electron transfer layer electricity
The preparation method in pond, the defects of to overcome above-mentioned prior art to exist, present invention process is simple, uniformity is good, it is reproducible and
Perovskite efficiency of solar cell is higher.
To reach above-mentioned purpose, the present invention adopts the following technical scheme that：
A kind of perovskite solar cell of high-performance conductive electrode and electron transfer layer, including glass substrate and according to
It is secondary to be laminated the transparent conductive oxide electrode being arranged in glass substrate, metal oxide electron transport layer, perovskite light absorbs
Layer, hole transmission layer, metal electrode, the transparent conductive oxide electrode and metal oxide electron transport layer are to utilize to penetrate
Frequency magnetron co-sputtering deposition forms.
Further, the first contact zone is formed between transparent conductive oxide electrode and metal oxide electron transport layer,
The second contact zone is formed between metal oxide electron transport layer and perovskite light absorbing layer, perovskite light absorbing layer and hole pass
The 3rd contact zone is formed between defeated layer, the 4th contact zone is formed between hole transmission layer and metal electrode.
Further, the transparent conductive oxide electrode is made using RF magnetron co-sputtering method double target co-sputtering,
Metal oxide electron transport layer is made using preparing the sputtering of transparent conductive oxide electrode one of target source, electrically conducting transparent
Oxide electrode and metal oxide electron transport layer are homogeneity laminated construction.
Further, the open-circuit voltage of described perovskite solar cell is more than 1.0V, and short-circuit current density is more than 19mA/
cm2, for fill factor, curve factor more than 0.60, electricity conversion is higher than 15%.
A kind of preparation method of the perovskite solar cell of high-performance conductive electrode and electron transfer layer, including it is following
Step：
Step 1：Transparent conductive oxide electricity is deposited by double targets using RF magnetron co-sputtering method on a glass substrate
Pole；
Step 2：After preparing transparent conductive oxide electrode, in the case where not destroying vacuum, immediately using radio frequency
Magnetron co-sputtering passes through one of target source depositing metal oxide electron transfer layer；
Step 3：After obtaining metal oxide electron transport layer, sequentially formed in metal oxide electron transport layer
Perovskite light absorbing layer, hole transmission layer and metal electrode, that is, obtain high-performance conductive electrode and electron transfer layer
Perovskite solar cell.
Further, transparent conductive oxide electrode is fluorine doped tin oxide, tin indium oxide, Al-Doped ZnO or mixes gallium oxidation
Zinc.
Further, metal oxide electron transport layer is zinc oxide or tin oxide.
Further, the depositing temperature of transparent conductive oxide electrode is controlled at 23-150 DEG C, and thickness control is in 50-
150nm。
Further, the depositing temperature of metal oxide electron transport layer is controlled at 23-350 DEG C, and thickness control is in 10-
100nm。
Further, prepared perovskite solar cell is just to put structure type.
Compared with prior art, the present invention has technique effect beneficial below：
The high-performance conductive electrode of the present invention and the perovskite solar cell of electron transfer layer, are total to using radio frequency magnetron
Sputtering method prepares transparent conductive electrode and electron transfer layer, (1), can be in low temperature flexibility substrates by sputtering method compared with solwution method
On realize large area, uniformity are good, repeatable, stability is high film；(2) transparent conductive electrode and electric transmission are being prepared
During layer, the sedimentary condition of condition of high vacuum degree is always maintained at, this ensures in thin-film technique is prepared and is sequentially preparing two kinds
Between film, avoid due to the environment such as vacuum, atmosphere moisture change introduce pollution, so as to reduce transparent conductive electrode and
Electron transfer layer interface trap density；(3) due to during transparent conductive electrode and electron transfer layer is formed, no interface
Reason operation, compared with conventional process flow, the cleaning of complexity is avoided, reaches the effect for shortening fabrication cycle and reducing cost
Fruit.
Further, during transparent conductive electrode and electron transfer layer is sequentially prepared, using same target sequentially
Deposition film and obtain lamination, this lamination is combined in the form of homojunction, can effectively reduce by two kinds of materials by lattice mismatch is drawn
The defects of enter'sing energy level, reduce boundary defect level density, and then avoid it is quick compound after perovskite solar cell exciton dissociation,
Be advantageous to the export ability and speed of the electronics after exciton dissociation, so as to improve the photoelectric conversion responsiveness of solar cell and contribution compared with
High short-circuit current density, obtain higher electricity conversion.In summary, passed by regulating and controlling transparent conductive electrode and electronics
Defeated layer homojunction laminated construction, the charge trap density of electric transmission bed boundary is effectively reduced, based on the conductive electricity of high-performance
The perovskite solar cell of pole and electron transfer layer has higher open-circuit voltage, short-circuit current density, fill factor, curve factor and phase
The electricity conversion answered.
What this inventive method was realized is had based on the perovskite solar cell of high-performance conductive electrode and electron transfer layer
Have technique is simple, uniformity is good, large area, it is reproducible, electricity conversion and stability are high the characteristics of.To realize technique
Simply, sufficient Research foundation is established in the controllable preparation of low cost, large area and high efficiency perovskite solar cell.
Brief description of the drawings
Fig. 1 is the perovskite solar battery structure signal of the high-performance conductive electrode and electron transfer layer of the present invention
Figure.
In figure：1 is glass substrate, and 2 be transparent conductive oxide electrode, and 3 be metal oxide electron transport layer, and 4 be calcium
Titanium ore light absorbing layer, 5 be hole transmission layer, and 6 be metal electrode, and 11 be the first contact zone, and 12 be the second contact zone, and 13 be the 3rd
Contact zone, 14 be the 4th contact zone.
Embodiment
The present invention is described in further detail below：
A kind of perovskite solar cell of high-performance conductive electrode and electron transfer layer, including glass substrate 1 and
Be cascading transparent conductive oxide electrode 2, metal oxide electron transmitting layer 3, perovskite light in glass substrate 1
Absorbed layer 4, hole transmission layer 5, metal electrode 6, transparent conductive oxide electrode 2 are total to using the double targets of RF magnetron co-sputtering method
Sputtering is made, and metal oxide electron transmitting layer 3 is to use to prepare the one of target source sputtering system of transparent conductive oxide electrode 2
, transparent conductive oxide electrode 2 and metal oxide electron transmitting layer 3 are homogeneity laminated construction, and transparent conductive oxide is electric
Pole 2 and metal oxide electron transmitting layer 3 have good Lattice Matching degree, relatively low interface contact resistance, low interface electricity
Lotus trap density, excellent film contacts interface, between transparent conductive oxide electrode 2 and metal oxide electron transmitting layer 3
The first contact zone 11 is formed, the second contact zone 12 is formed between metal oxide electron transmitting layer 3 and perovskite light absorbing layer 4,
The 3rd contact zone 13, shape between hole transmission layer 5 and metal electrode 6 are formed between perovskite light absorbing layer 4 and hole transmission layer 5
Into the 4th contact zone 14, the open-circuit voltage of perovskite solar cell is more than 1.0V, and short-circuit current density is more than 19mA/cm2, filling
The factor is more than 0.60, and electricity conversion is higher than 15%.
A kind of preparation method of the perovskite solar cell of high-performance conductive electrode and electron transfer layer, including it is following
Step：
Step 1：Transparent conductive oxide electricity is deposited by double targets using RF magnetron co-sputtering method in glass substrate 1
Pole 2, transparent conductive oxide electrode 2 are fluorine doped tin oxide FTO, tin indium oxide ITO, Al-Doped ZnO AZO, gallium-doped zinc oxide
Any one material in GZO, transparent conductive oxide electrode 2 have low resistivity, high conductance, high transmittance, caused
Close film, the depositing temperature of transparent conductive oxide electrode 2 are controlled at 23-150 DEG C, and thickness control is in 50-150nm；
Step 2：After preparing transparent conductive oxide electrode 2, in the case where not destroying vacuum, use penetrate immediately
Frequency magnetron co-sputtering passes through one of target source depositing metal oxide electron transfer layer 3, metal oxide electron transmitting layer 3
It is any one material in zinc oxide, tin oxide, the preparation temperature of metal oxide electron transmitting layer 3 is controlled in 23-350
DEG C, thickness control is in 10-100nm；Transparent conductive oxide electrode 2 and metal oxide electron transmitting layer 3 interface need not surpass
The handling process such as sound, cleaning,
Step 3：After obtaining metal oxide electron transmitting layer 3, the shape successively on metal oxide electron transmitting layer 3
Into perovskite light absorbing layer 4, hole transmission layer 5 and metal electrode 6, that is, obtain high-performance conductive electrode and electric transmission
The perovskite solar cell of layer, perovskite solar cell device are arranged to just put structure type.
The present invention is described in further detail with reference to embodiment：
Embodiment 1
A kind of preparation method of the perovskite solar cell of high-performance conductive electrode and electron transfer layer, including it is as follows
Step：
1) cleaning of glass substrate 1：Substrate is cleaned in supersonic wave cleaning machine and is divided into following four step, 1. ethanol cleans
15min；2. acetone cleans 30min；3. isopropanol cleans 30min；4. ethanol cleans 15min；Then by cleaned with electricity
The glass substrate of pole is dried up with nitrogen.
2) preparation of transparent conductive oxide electrode 2：Splashed altogether using radio frequency magnetron in glass substrate 1 based on Fig. 1 structures
The method of penetrating prepares transparent conductive oxide electrode 2, and by taking fluorine-doped tin oxide FTO as an example, target is tin oxide, and deposition gases atmosphere is
Argon gas, oxygen and Nitrogen trifluoride, its ratio are 26:1:3sccm, depositing temperature are 23 DEG C, deposition power 180W, deposition pressure
For 1Pa, deposit thickness 50nm.
3) preparation of metal oxide electron transmitting layer 3：After step 2), gold is prepared using RF magnetron co-sputtering method
Belong to Oxide Electron transmitting layer 3, by taking tin oxide as an example, target is tin oxide, and deposition gases atmosphere is argon gas and oxygen, its ratio
For 29.4:0.6sccm, depositing temperature are 23 DEG C, deposition power 180W, deposition pressure 1Pa, deposit thickness 100nm.
4) preparation of perovskite light absorbing layer 4：After step 3), using a step spin-coating method, the perovskite prepared
Precursor solution CH3NH3PbI3With 4000rpm speed spin coating 40s, then 100 DEG C of annealing 10min, perovskite on warm table
The thickness of light absorbing layer 4 is 350nm.
5) after step 4), with 5000rpm speed, spin coating 40s prepares Spiro- on perovskite light absorbing layer 4
OMeTAD hole transmission layers 5, finally it is passed to vacuum cavity evaporation gold electrode.
The open-circuit voltage of resulting perovskite solar cell is 1.10V, short-circuit current density 21.20mA/cm2, fill out
It is 0.70 to fill the factor, electricity conversion 16.32%.
Embodiment 2
A kind of preparation method of the perovskite solar cell of high-performance conductive electrode and electron transfer layer, including it is as follows
Step：
1) cleaning of glass substrate 1：Substrate is cleaned in supersonic wave cleaning machine and is divided into following four step, 1. ethanol cleans
15min；2. acetone cleans 30min；3. isopropanol cleans 30min；4. ethanol cleans 15min；Then by cleaned with electricity
The glass substrate of pole is dried up with nitrogen.
2) preparation of transparent conductive oxide electrode 2：Splashed altogether using radio frequency magnetron in glass substrate 1 based on Fig. 1 structures
The method of penetrating prepares transparent conductive oxide electrode 2, and by taking Al-Doped ZnO AZO as an example, target is zinc oxide and aluminium, deposition gases atmosphere
It is argon gas and oxygen, its ratio is 29.4:0.6sccm, depositing temperature are 100 DEG C, and deposition power is respectively 180W and 60W, is sunk
It is 1Pa, deposit thickness 150nm to overstock strong.
3) preparation of metal oxide electron transmitting layer 3：After step 2), gold is prepared using RF magnetron co-sputtering method
Belong to Oxide Electron transmitting layer 3, by taking zinc oxide as an example, target is zinc oxide, and deposition gases atmosphere is argon gas and oxygen, its ratio
For 29.4:0.6sccm, depositing temperature are 350 DEG C, deposition power 180W, deposition pressure 1Pa, deposit thickness 45nm.
4) preparation of perovskite light absorbing layer 4：After step 3), using a step spin-coating method, the perovskite prepared
Precursor solution CH3NH3PbI3With 4000rpm speed spin coating 40s, then 100 DEG C of annealing 10min, perovskite on warm table
The thickness of light absorbing layer 4 is 350nm.
5) after step 4), with 5000rpm speed, spin coating 40s prepares Spiro- on perovskite light absorbing layer 4
OMeTAD hole transmission layers 5, finally it is passed to vacuum cavity evaporation gold electrode.
The open-circuit voltage of resulting perovskite solar cell is 1.14V, short-circuit current density 21.45mA/cm2, fill out
It is 0.65 to fill the factor, electricity conversion 15.89%.
Embodiment 3
A kind of preparation method of the perovskite solar cell of high-performance conductive electrode and electron transfer layer, including it is as follows
Step：
1) cleaning of glass substrate 1：Substrate is cleaned in supersonic wave cleaning machine and is divided into following four step, 1. ethanol cleans
15min；2. acetone cleans 30min；3. isopropanol cleans 30min；4. ethanol cleans 15min；Then by cleaned with electricity
The glass substrate of pole is dried up with nitrogen.
2) preparation of transparent conductive oxide electrode 2：Splashed altogether using radio frequency magnetron in glass substrate 1 based on Fig. 1 structures
The method of penetrating prepares transparent conductive oxide electrode 2, and by taking tin indium oxide ITO as an example, target is tin oxide and indium oxide, deposition gases atmosphere
It is argon gas and oxygen to enclose, and its ratio is 29.4:0.6sccm, depositing temperature are 150 DEG C, and deposition power is respectively 180W and 60W,
Deposition pressure is 1Pa, deposit thickness 100nm.
3) preparation of metal oxide electron transmitting layer 3：After step 2), gold is prepared using RF magnetron co-sputtering method
Belong to Oxide Electron transmitting layer 3, by taking tin oxide as an example, target is tin oxide, and deposition gases atmosphere is argon gas and oxygen, its ratio
For 29.4:0.6sccm, depositing temperature are 200 DEG C, deposition power 180W, deposition pressure 1Pa, deposit thickness 10nm.
4) preparation of perovskite light absorbing layer 4：After step 3), using a step spin-coating method, the perovskite prepared
Precursor solution CH3NH3PbI3With 4000rpm speed spin coating 40s, then 100 DEG C of annealing 10min, perovskite on warm table
The thickness of light absorbing layer 4 is 350nm.
5) after step 4), with 5000rpm speed, spin coating 40s prepares Spiro- on perovskite light absorbing layer 4
OMeTAD hole transmission layers 5, finally it is passed to vacuum cavity evaporation gold electrode.
The open-circuit voltage of resulting perovskite solar cell is 1.08V, short-circuit current density 22.00mA/cm2, fill out
It is 0.66 to fill the factor, electricity conversion 15.68%.
Embodiment 4
A kind of preparation method of the perovskite solar cell of high-performance conductive electrode and electron transfer layer, including it is as follows
Step：
1) cleaning of glass substrate 1：Substrate is cleaned in supersonic wave cleaning machine and is divided into following four step, 1. ethanol cleans
15min；2. acetone cleans 30min；3. isopropanol cleans 30min；4. ethanol cleans 15min；Then by cleaned with electricity
The glass substrate of pole is dried up with nitrogen.
2) preparation of transparent conductive oxide electrode 2：Splashed altogether using radio frequency magnetron in glass substrate 1 based on Fig. 1 structures
The method of penetrating prepares transparent conductive oxide electrode 2, and by taking gallium-doped zinc oxide GZO as an example, target is zinc oxide and gallium oxide, deposition gases
Atmosphere is argon gas and oxygen, and its ratio is 29.4:0.6sccm, depositing temperature are 50 DEG C, and deposition power is respectively 180W and 60W,
Deposition pressure is 1Pa, deposit thickness 50nm.
3) preparation of metal oxide electron transmitting layer 3：After step 2), gold is prepared using RF magnetron co-sputtering method
Belong to Oxide Electron transmitting layer 3, by taking zinc oxide as an example, target is zinc oxide, and deposition gases atmosphere is argon gas and oxygen, its ratio
For 29.4:0.6sccm, depositing temperature are 150 DEG C, deposition power 180W, deposition pressure 1Pa, deposit thickness 45nm.
4) preparation of perovskite light absorbing layer 4：After step 3), using a step spin-coating method, the perovskite prepared
Precursor solution CH3NH3PbI3With 4000rpm speed spin coating 40s, then 100 DEG C of annealing 10min, perovskite on warm table
The thickness of light absorbing layer 4 is 350nm.
5) after step 4), with 5000rpm speed, spin coating 40s prepares Spiro- on perovskite light absorbing layer 4
OMeTAD hole transmission layers 5, finally it is passed to vacuum cavity evaporation gold electrode.
The open-circuit voltage of resulting perovskite solar cell is 1.15V, short-circuit current density 21.08mA/cm2, fill out
It is 0.71 to fill the factor, electricity conversion 17.21%.
The preparation for the perovskite solar cell with high-performance conductive electrode and electron transfer layer that the present invention realizes
Method, it can be applied to solar cell of new generation and flexible photovoltaic product scope.
Claims (10)
1. the perovskite solar cell of a kind of high-performance conductive electrode and electron transfer layer, it is characterised in that including glass
Substrate (1) and transparent conductive oxide electrode (2), the metal oxide electron being cascading in glass substrate (1)
Transport layer (3), perovskite light absorbing layer (4), hole transmission layer (5) and metal electrode (6), the transparent conductive oxide electrode
(2) and metal oxide electron transport layer (3) is formed using RF magnetron co-sputtering method deposition.
2. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 1 and electron transfer layer,
Characterized in that, form the first contact zone between transparent conductive oxide electrode (2) and metal oxide electron transport layer (3)
(11) the second contact zone (12), perovskite, are formed between metal oxide electron transport layer (3) and perovskite light absorbing layer (4)
Form the 3rd contact zone (13) between light absorbing layer (4) and hole transmission layer (5), hole transmission layer (5) and metal electrode (6) it
Between formed the 4th contact zone (14).
3. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 1 and electron transfer layer,
Characterized in that, the transparent conductive oxide electrode (2) is made using RF magnetron co-sputtering method double target co-sputtering, metal
Oxide Electron transport layer (3) is made using preparing the sputtering of transparent conductive oxide electrode (2) one of target source, transparent to lead
Oxide electrode (2) and metal oxide electron transport layer (3) are homogeneity laminated construction.
4. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 1 and electron transfer layer,
Characterized in that, the open-circuit voltage of described perovskite solar cell is more than 1.0V, short-circuit current density is more than 19mA/cm2, fill out
The factor is filled more than 0.60, and electricity conversion is higher than 15%.
5. a kind of preparation method of the perovskite solar cell of high-performance conductive electrode and electron transfer layer, its feature exist
In comprising the following steps：
Step 1：Transparent conductive oxide electrode is deposited by double targets using RF magnetron co-sputtering method in glass substrate (1)
(2)；
Step 2：After preparing transparent conductive oxide electrode (2), in the case where not destroying vacuum, immediately using radio frequency
Magnetron co-sputtering passes through one of target source depositing metal oxide electron transfer layer (3)；
Step 3：After obtaining metal oxide electron transport layer (3), the shape successively in metal oxide electron transport layer (3)
Into perovskite light absorbing layer (4), hole transmission layer (5) and metal electrode (6), that is, obtain high-performance conductive electrode and electricity
The perovskite solar cell of sub- transport layer.
6. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 5 and electron transfer layer
Preparation method, it is characterised in that transparent conductive oxide electrode (2) is fluorine doped tin oxide, tin indium oxide, Al-Doped ZnO or mixed
Gallium zinc oxide.
7. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 5 and electron transfer layer
Preparation method, it is characterised in that metal oxide electron transport layer (3) is zinc oxide or tin oxide.
8. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 5 and electron transfer layer
Preparation method, it is characterised in that the depositing temperature of transparent conductive oxide electrode (2) is controlled at 23-150 DEG C, and thickness control exists
50-150nm。
9. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 5 and electron transfer layer
Preparation method, it is characterised in that the depositing temperature control of metal oxide electron transport layer (3) is at 23-350 DEG C, thickness control
In 10-100nm.
10. the perovskite solar cell of a kind of high-performance conductive electrode according to claim 5 and electron transfer layer
Preparation method, it is characterised in that prepared perovskite solar cell is just puts structure type.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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