CN105895806A - CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof - Google Patents
CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN105895806A CN105895806A CN201610380050.6A CN201610380050A CN105895806A CN 105895806 A CN105895806 A CN 105895806A CN 201610380050 A CN201610380050 A CN 201610380050A CN 105895806 A CN105895806 A CN 105895806A
- Authority
- CN
- China
- Prior art keywords
- layer
- tin
- zinc
- copper
- sulfur
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a CuZnSnS-perovskite-based planar heterojunction solar cell and a manufacturing method thereof. The solar cell comprises a substrate, a transparent conducting layer, a CuZnSnS layer, a perovskite layer, an electron transport layer and a metal electrode layer from bottom to top respectively. In a cell structure disclosed by the invention, the CuZnSnS layer is taken as a hole transport layer in the cell instead of a common organic material, and a charge layer is low in material price, environmentally friendly, high in material stability, high in charge mobility, well matched with a perovskite absorbing layer in energy level and process and easy to prepare over a large area, and has a wide industrial application prospect.
Description
Technical field
The invention belongs to green energy resource technical field, relate to film photovoltaic material and devices field, particularly relate to one and adopt
With copper-zinc-tin-sulfur film as the battery device of perovskite cell interface layer and preparation method.
Background technology
Ca-Ti ore type solaode was a kind of novel organic inorganic hybridization solaode, from such material in 2009
First Application in photovoltaic cell field, a few years, quickly grow.Conversion efficiency breaks through rapidly percent from 3 percent
20, the most reach the peer-level of commercialization silion cell, there is vast potential for future development.
2009, Akihiro Kojima was first by CH3NH3PbI3And CH3NH3PbBr3It is prepared as quantum dot to be applied to too
In sun energy battery, it is thus achieved that the CH of 3.8%3NH3PbI3Battery conversion efficiency and the CH of 3.1%3NH3PbBr3Battery conversion efficiency.
This field subsequent experimental shows that perovskite material has wide absorption spectrum and high absorption coefficient, and this characteristic is for Ca-Ti ore type too
The development of sun energy battery is particularly important.The results show of Lee research group perovskite structure both can serve as light and absorb
Layer can serve as again electron transfer layer.Etgar have also been made similar experiment, demonstrates calcium titanium ore bed and can function as hole transport
Layer.Due to the bipolar transmission characteristic of perovskite, this just lays a good foundation for planar heterojunction perovskite solar battery structure.
The use of planar heterojunction structure, greatly simplify the preparation technology of battery, reduce in preparation process for high temperature work
The restriction of skill.
Current perovskite-based solar cell device structure mainly has two kinds, and one is n-i-p structure, typically has FTO/
TiO2/ perovskite/organic hole transport material/metal electrode, the battery of this structure typically requires high temperature sintering, and battery
There is obvious hysteresis in power output；Another kind is p-i-n structure, typically has ITO/ organic cavity transmission layer/calcium titanium
Ore deposit/organic electron transport layer/metal electrode, the battery of this structure generally uses organic transport materials, and organic transport materials
Generally expensive and poor durability.Copper-zinc-tin-sulfur is a kind of direct band gap p-type semiconductor material, has the forbidden band width of 1.5eV
Degree and good charge transport properties, be applied to area of solar cell.Copper-zinc-tin-sulfur film solar cell have with
CIGS (CuInGaSe, the CIGS) theoretical conversion efficiencies that thin-film solar cells is identical, and do not use poisonous and rare
Element.Currently used most commonly used organic hole transport material Spiro-OMeTAD is with high costs, does not utilize solar-electricity
The popularization and application in pond.The application of copper-zinc-tin-sulfur inorganic hole-transporting layer has emphatically for the follow-up developments of perovskite solaode
Want meaning.
Summary of the invention
In order to solve the Cost Problems of Ca-Ti ore type solaode charge transport layer, the purpose of the present invention in background technology
It is to provide a kind of low cost, technique simply based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode and preparation side thereof
Method.
Specifically, the invention provides techniques below scheme:
The present invention provides a kind of based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, and its structure includes basal layer
, and be successively set on basal layer (1) (1): transparency conducting layer (2), copper-zinc-tin-sulfur layer (3), calcium titanium ore bed (4), without dynamo-electric
Sub-transport layer (5) and metal electrode layer (6).
Further, the material of described inorganic electronic transport layer (5) is zinc oxide, and its thickness is 30-500nm.
Further, the material of described basal layer (1) is glass or polyimides.Advantageous applications glass or polyamides in the present invention
Imines, as base layer material, certainly can also use other similar material as basal layer, such as polyesters film, preferentially select
Glass or polyimides can make battery have good dimensional stability as basal layer, reduce battery defect density, for
The quality promoting solaode has great importance.
Further, during the material of described transparency conducting layer (2) is tin indium oxide (ITO) and fluorine doped tin oxide (FTO)
Plant or two kinds.Tin indium oxide or fluorine doped tin oxide is used to have light transmittance high, the characteristic that resistance is low, more illumination can be made to arrive and to inhale
Receipts layer, and reduce the series resistance of battery, improve solaode power delivery constant.
Further, the thickness of described copper-zinc-tin-sulfur layer (3) is 30-200nm.Copper-zinc-tin-sulfur layer is to have custerite structure
Inorganic semiconductor material, there is good photo and thermal stability and high charge mobility.Copper-zinc-tin-sulfur layer and calcium titanium ore bed are joined
Close, it is achieved that synergism, it is possible to significantly promote its absorption efficiency for solaode, it is ensured that the light of solaode
Electricity conversion ratio.
Further, the thickness of described calcium titanium ore bed (4) is 300-500nm.The present invention use calcium titanium ore bed belong to halogenation
Thing perovskite material, has ABX3One-tenth be grouped into, wherein A is methylamino (CH3NH3 +), first miaow base (HC (NH2)2+), Cs+Sun from
Son or they three kinds of ions mix with certain proportion；B is bivalence Pb2+Or Sn2+Ion, X is monovalence Cl-, Br-, I-Cloudy from
One or more in son, the structure of calcium titanium ore bed is to have the perovskite structure of metal halide octahedron feature.This kind of material
The absorption coefficient of light of material is high, and charge transport properties is outstanding, it is possible to fully photoelectric conversion effect in solar cells, it is achieved the sun
The Efficient Conversion of energy battery utilizes.
Further, the material of described inorganic electronic transport layer (5) is zinc oxide, and its thickness is 30-200nm.Use oxidation
Zinc is as inorganic electronic transport layer, because zinc oxide film can protect perovskite absorbed layer by dampness as dense oxide layer
Deng the erosion of environment, be conducive to improving battery context stability.
Further, the material of described metal electrode layer (6) is one or more in gold, silver, copper and aluminum.Electrode layer is even
Connect output circuit, it is achieved the key of the utilization of power of photoelectric conversion, select above-mentioned metal electrode material, there is resistance low, conduction
Effective feature, it is possible to promote to realize the high usage of solaode, it is to avoid electric energy loss on the line, simultaneously for
The temperature of solaode controls the most helpful effect.
The present invention provide based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode preparation technology, including following step
Rapid:
1) take and be coated with the substrate (being the composite construction of substrate and transparency conducting layer) of transparency conducting layer, clean up.
2) preparing copper-zinc-tin-sulfur layer over transparent conductive layer, preparation method is magnetron sputtering deposition or the sulfuration of metal preformed layer
Any one in method.
3) preparing calcium titanium ore bed on copper-zinc-tin-sulfur layer, preparation method is in solution spin coating, solution spraying or evaporation
Any one.
4) preparing inorganic electronic transport layer on calcium titanium ore bed, preparation method is solution spin-coating method.
5) evaporation is used to prepare metal electrode layer on the electron transport layer.
Further, in above-mentioned preparation technology protocol step 2, magnetron sputtering obtains the concrete operations of copper-zinc-tin-sulfur layer and is: adopt
Use copper-zinc-tin-sulfur ceramic target, with high-purity argon gas as sputter gas, use magnetron sputtering deposition copper-zinc-tin-sulfur layer, sputtering pressure
0.1～2.5Pa, preferably air pressure is 0.5～1.0Pa, and sputter temperature is 200～550 DEG C, and sputtering time is 2～20min.Magnetic control
Sputtering is physical vapour deposition (PVD) (PVD) method, the advantage such as have that equipment is simple, easily controllable, plated film area is big and adhesive force is strong,
Easily achieving high speed, low temperature, the processing step of low damage, the solaode for preparation high-quality has good help
Meaning.Preferably, sputter temperature is 240～500 DEG C, and the temperature controlling sputtering can preferably ensure that CZTS sinks in this range
Long-pending atomic ratio and deposited crystal pattern, it is achieved higher photovoltaic property.
Compared with prior art, beneficial effects of the present invention:
1. the solar battery structure of the present invention uses copper-zinc-tin-sulfur layer as inorganic charge transport layers, compared with have
Machine charge transport layer is compared, and its stability of material is high, and conducts electricity very well, and advantageously reduces the internal resistance of battery device.
2. the raw material elemental of the copper-zinc-tin-sulfur Rotating fields of the solar cell application of present invention abundance in the earth's crust is big,
Application cost can be reduced.
3. the solar battery structure of present invention upgrading, can be straight in original inorganic compound semiconductor thin-film technique
Connect upgrading to expand, apply existing perovskite device, quickly realize large area and prepare, improve the repeatability of battery device.Environmental protection
Cost-effective.
4., in the solaode of the present invention, copper-zinc-tin-sulfur layer is good with calcium titanium ore bed level-density parameter performance.Thus it is corresponding
It is high that battery device has charge extraction efficiency, and the good characteristic that battery open circuit voltage is high, for the popularization and application of solaode
It is significant.
Accompanying drawing illustrates:
Fig. 1 is the structural representation of the solaode of the present invention.
Fig. 2 is the surface topography photo of the copper-zinc-tin-sulfur film sample of embodiment 4 preparation.
Fig. 3 is the i-v curve that the sample prepared by embodiment 4 records.
Fig. 4 is the i-v curve that the sample prepared by embodiment 5 records.
Detailed description of the invention
Below in conjunction with test example and detailed description of the invention, the present invention is described in further detail.But this should not understood
Scope for the above-mentioned theme of the present invention is only limitted to below example, and all technology realized based on present invention belong to this
The scope of invention.Torr, torr, pressure unit, refer to rise the hydrargyrum in thin for children straight tube the pressure of one millimeter, i.e. represent 1/760
Atmospheric pressure again.
Embodiment 1
The substrate of glass that will be covered with tin indium oxide is washed 30 minutes with detergent, acetone, EtOH Sonicate successively, uses nitrogen
Rifle dries up, and carries out UV-ozone process 5min.Substrate is put in vacuum chamber, be evacuated to 5 × 10-6Torr (torr) with
Under, heating substrate, to 400 DEG C, then passes to argon and keeps vacuum to be in 0.5Pa, use medium frequency magnetron sputtering to deposit about 50nm
Copper-zinc-tin-sulfur film.By the CH of 1mmol3NH3I and 1mmol PbI2It is molten to dimethylformamide (DMF) that powder is dissolved into 1mL
In liquid, in solution, add 100 μ L dimethyl sulfoxide (DMSO) solution the most again, take 50 these solution of μ L and drop in copper-zinc-tin-sulfur film
Surface so that it is sufficiently drawout, then rotary sample, anneal at 100 DEG C 10min subsequently by sample, it is thus achieved that thin film thickness
Spend about 300nm, be perovskite thin film layer.On perovskite thin film surface, the method for employing solution spin-coating method is prepared thickness and is
The ZnO electron transfer layer of 50nm, spin coating liquid used is ZnO suspension.Finally, the method for thermal evaporation is used to prepare 100nm thickness
Silver electrode.The solar battery structure layer prepared is as it is shown in figure 1, be followed successively by basal layer (1), transparency conducting layer from top to bottom
(2), copper-zinc-tin-sulfur layer (3), calcium titanium ore bed (4), inorganic electronic transport layer (5) and metal electrode layer (6).In intensity of illumination it is
100mW/cm2AM1.5 simulated solar irradiation irradiate under, test battery device current-voltage curve, the open circuit therefrom obtained electricity
Pressure is 0.46V, and short circuit current is 8.3mA/cm2, fill factor, curve factor is 0.40, and photovoltaic energy conversion efficiency is 1.52%.
Embodiment 2
The substrate of glass that will be covered with tin indium oxide is washed 30 minutes with detergent, acetone, EtOH Sonicate successively, uses nitrogen
Rifle dries up, and carries out UV-ozone process 5min.Substrate is put in vacuum chamber, be evacuated to 5 × 10-6Below torr, adds
Hot substrate, to 400 DEG C, then passes to argon and keeps vacuum to be in 0.5Pa, use medium frequency magnetron sputtering to deposit the copper of about 50nm
Zinc-tin-sulfur film.By the CH of 1.35mmol3NH3I and 1.35mmol PbI2Powder is dissolved into 1mL to dimethylformamide (DMF)
In solution, adding 100 μ L dimethyl sulfoxide (DMSO) solution the most again in solution, taking 50 these solution of μ L, to drop in copper-zinc-tin-sulfur thin
Film surface so that it is sufficiently drawout, then rotary sample, anneal at 100 DEG C 10min subsequently by sample, it is thus achieved that thin film
Thickness about 400nm.On perovskite thin film surface, the method for solution spin-coating method is used to prepare the ZnO electric transmission that thickness is 50nm
Layer, spin coating liquid used is ZnO suspension.Finally, the method for thermal evaporation is used to prepare the thick silver electrode of 100nm.In intensity of illumination
For 100mW/cm2AM1.5 simulated solar irradiation irradiate under, test battery device current-voltage curve, the open circuit therefrom obtained
Voltage is 0.48V, and short circuit current is 9.7mA/cm2, fill factor, curve factor is 0.46, and photovoltaic energy conversion efficiency is 2.14%.
Embodiment 3
The substrate of glass that will be covered with fluorine doped tin oxide is washed 30 minutes with detergent, acetone, EtOH Sonicate successively, uses nitrogen
Air gun dries up, and carries out UV-ozone process 5min.Substrate is put in vacuum chamber, be evacuated to 5 × 10-6Below torr,
Heating substrate, to 500 DEG C, then passes to argon and keeps vacuum to be in 0.5Pa, use medium frequency magnetron sputtering to deposit about 50nm's
Copper-zinc-tin-sulfur film.By the CH of 1mmol3NH3I and 1mmol PbI2Powder is dissolved into 1mL to dimethylformamide (DMF) solution
In, in solution, add 100 μ L dimethyl sulfoxide (DMSO) solution the most again, take 50 these solution of μ L and drop in copper-zinc-tin-sulfur film table
Face so that it is sufficiently drawout, then rotary sample, anneal at 100 DEG C 10min subsequently by sample, it is thus achieved that film thickness
About 300nm.On perovskite thin film surface, the method for solution spin-coating method is used to prepare the ZnO electron transfer layer that thickness is 50nm, institute
It is ZnO suspension with spin coating liquid.Finally, the method for thermal evaporation is used to prepare the thick silver electrode of 100nm.In intensity of illumination it is
100mW/cm2AM1.5 simulated solar irradiation irradiate under, test battery device current-voltage curve, the open circuit therefrom obtained electricity
Pressure is 0.89V, and short circuit current is 8.5mA/cm2, fill factor, curve factor is 0.42, and photovoltaic energy conversion efficiency is 3.18%.
Embodiment 4
The substrate of glass that will be covered with fluorine doped tin oxide is washed 30 minutes with detergent, acetone, EtOH Sonicate successively, uses nitrogen
Air gun dries up, and carries out UV-ozone process 5min.Substrate is put in vacuum chamber, be evacuated to 5 × 10-6Below torr,
Heating substrate, to 500 DEG C, then passes to argon and keeps vacuum to be in 0.5Pa, use medium frequency magnetron sputtering to deposit about 50nm's
Copper-zinc-tin-sulfur film.By the CH of 1.35mmol3NH3I and 1.35mmol PbI2Powder is dissolved into 1mL to dimethylformamide
(DMF), in solution, in solution, add 100 μ L dimethyl sulfoxide (DMSO) solution the most again, take 50 these solution of μ L and drop in copper zinc
Stannum sulfur film surface so that it is sufficiently drawout, then rotary sample, anneal at 100 DEG C 10min subsequently by sample, it is thus achieved that
Film thickness about 400nm.On perovskite thin film surface, the method for employing solution spin-coating method prepares the ZnO electricity that thickness is 50nm
Sub-transport layer, spin coating liquid used is ZnO suspension.Finally, the method for thermal evaporation is used to prepare the thick silver electrode of 100nm.At light
It is 100mW/cm according to intensity2AM1.5 simulated solar irradiation irradiate under, test battery device current-voltage curve, therefrom obtain
Open-circuit voltage be 0.87V, short circuit current is 13.2mA/cm2, fill factor, curve factor is 0.48, and photovoltaic energy conversion efficiency is
5.51%.I-v curve, its result is as shown in Figure 2.
Embodiment 5
The substrate of glass that will be covered with fluorine doped tin oxide is washed 30 minutes with detergent, acetone, EtOH Sonicate successively, uses nitrogen
Air gun dries up, and carries out UV-ozone process 5min.Substrate is put in vacuum chamber, be evacuated to 5 × 10-6Below torr,
Heating substrate, to 500 DEG C, then passes to argon and keeps vacuum to be in 0.5Pa, use medium frequency magnetron sputtering to deposit about 100nm's
Copper-zinc-tin-sulfur film, it is thus achieved that the stereoscan photograph of copper-zinc-tin-sulfur film see Fig. 3.By the CH of 1.35mmol3NH3I and
1.35mmol PbI2Powder is dissolved into 1mL in dimethylformamide (DMF) solution, adds 100 μ L bis-the most again in solution
Methyl sulfoxide (DMSO) solution, takes 50 these solution of μ L and drops in copper-zinc-tin-sulfur film surface so that it is sufficiently drawout, then rotates
Sample, anneal at 100 DEG C 10min subsequently by sample, it is thus achieved that film thickness about 400nm.On perovskite thin film surface, use
The method of solution spin-coating method prepares the ZnO electron transfer layer that thickness is 50nm, and spin coating liquid used is ZnO suspension.Finally, use
The method of thermal evaporation prepares the silver electrode that 100nm is thick.It is 100mW/cm in intensity of illumination2AM1.5 simulated solar irradiation irradiate under,
The current-voltage curve of test battery device, the open-circuit voltage therefrom obtained is 0.71V, and short circuit current is 10.8mA/cm2, fill out
Filling the factor is 0.42, and photovoltaic energy conversion efficiency is 3.22%.I-v curve, its result is as shown in Figure 4.
Claims (9)
1. one kind based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, it is characterised in that: include basal layer (1), and
It is successively set on basal layer (1): transparency conducting layer (2), copper-zinc-tin-sulfur layer (3), calcium titanium ore bed (4), inorganic electronic are transmitted
Layer (5) and metal electrode layer (6).
One the most according to claim 1 is based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, and its feature exists
In: the material of described basal layer (1) is glass or polyimides.
One the most according to claim 1 is based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, and its feature exists
In: the material of described transparency conducting layer (2) is one or both in tin indium oxide and fluorine doped tin oxide.
One the most according to claim 1 is based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, and its feature exists
In: the thickness of described copper-zinc-tin-sulfur layer (3) is 30-200nm.
One the most according to claim 1 is based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, and its feature exists
In: the thickness of described calcium titanium ore bed (4) is 300-500nm.
One the most according to claim 1 is based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, and its feature exists
In: the material of described inorganic electronic transport layer (5) is zinc oxide, and its thickness is 30-200nm.
One the most according to claim 1 is based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, and its feature exists
In: the material of described metal electrode layer (6) is mainly one or more in gold, silver, copper and aluminum.
8. prepare the method based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode described in claim 1, its
It is characterised by, comprises the steps:
1) cleaning is coated with the substrate of transparency conducting layer；
2) preparing copper-zinc-tin-sulfur layer over transparent conductive layer, preparation method is in magnetron sputtering deposition or metal preformed layer sulfuration method
Any one；
3) preparing calcium titanium ore bed on copper-zinc-tin-sulfur layer, preparation method is arbitrary in solution spin coating, solution spraying, evaporation
Kind；
4) preparing inorganic electronic transport layer on calcium titanium ore bed, preparation method is solution spin-coating method；
5) evaporation is used to prepare metal electrode layer on the electron transport layer.
Preparation the most according to claim 8 method based on copper-zinc-tin-sulfur perovskite planar heterojunction solaode, its
It is characterised by: step 2 prepares copper-zinc-tin-sulfur layer (5), is obtained by magnetron sputtering deposition, magnetron sputtering deposition process, specifically
Behaviour is taken as copper-zinc-tin-sulfur ceramic target, and with high-purity argon gas as sputter gas, sputtering pressure 0.5 ~ 1.0 Pa, sputter temperature is
200 ~ 500 DEG C, sputtering time is 2 ~ 20 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610380050.6A CN105895806A (en) | 2016-05-31 | 2016-05-31 | CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610380050.6A CN105895806A (en) | 2016-05-31 | 2016-05-31 | CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105895806A true CN105895806A (en) | 2016-08-24 |
Family
ID=56709707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610380050.6A Pending CN105895806A (en) | 2016-05-31 | 2016-05-31 | CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105895806A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411553A (en) * | 2018-01-26 | 2019-03-01 | 宁波工程学院 | A kind of method and application of low temperature preparation copper zinc sulphur nano thin-film |
| CN110808333A (en) * | 2019-11-05 | 2020-02-18 | 信阳师范学院 | Perovskite solar cell based on copper-zinc-tin-sulfur-selenium hole transport layer and preparation method thereof |
| CN113013340A (en) * | 2021-03-03 | 2021-06-22 | 北京交通大学 | Heterojunction solar cell and manufacturing method thereof |
| CN113517370A (en) * | 2021-06-11 | 2021-10-19 | 上海应用技术大学 | Heterogeneous structure type solar cell structure and preparation method and application thereof |
| CN113823747A (en) * | 2020-06-18 | 2021-12-21 | Tcl科技集团股份有限公司 | Nano material, preparation method thereof and light-emitting diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733617A (en) * | 2015-03-30 | 2015-06-24 | 朱熹 | Method for manufacturing high-efficiency perovskite type solar cell through large crystal grain forming |
| CN105609639A (en) * | 2015-12-23 | 2016-05-25 | 海安常州大学高新技术研发中心 | Low-temperature preparation method for organic/inorganic hybrid perovskite solar cell |
-
2016
- 2016-05-31 CN CN201610380050.6A patent/CN105895806A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733617A (en) * | 2015-03-30 | 2015-06-24 | 朱熹 | Method for manufacturing high-efficiency perovskite type solar cell through large crystal grain forming |
| CN105609639A (en) * | 2015-12-23 | 2016-05-25 | 海安常州大学高新技术研发中心 | Low-temperature preparation method for organic/inorganic hybrid perovskite solar cell |
Non-Patent Citations (2)
| Title |
|---|
| KYUNGEUN JUNG ET AL.: ""Solution-processed flexible planar perovskite solar cells: A strategy to enhance efficiency by controlling the ZnO electron transfer layer, PbI2 phase, and CH3NH3PbI3 morphologies"", 《JOURNAL OF POWER SOURCES》 * |
| QILIANG WU ET AL.: ""Kesterite Cu2ZnSnS4 as a Low-Cost Inorganic Hole-TransportingMaterial for High-Efficiency Perovskite Solar Cells"", 《APPLIED MATERIALS & INTERFACES》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411553A (en) * | 2018-01-26 | 2019-03-01 | 宁波工程学院 | A kind of method and application of low temperature preparation copper zinc sulphur nano thin-film |
| CN110808333A (en) * | 2019-11-05 | 2020-02-18 | 信阳师范学院 | Perovskite solar cell based on copper-zinc-tin-sulfur-selenium hole transport layer and preparation method thereof |
| CN113823747A (en) * | 2020-06-18 | 2021-12-21 | Tcl科技集团股份有限公司 | Nano material, preparation method thereof and light-emitting diode |
| CN113013340A (en) * | 2021-03-03 | 2021-06-22 | 北京交通大学 | Heterojunction solar cell and manufacturing method thereof |
| CN113517370A (en) * | 2021-06-11 | 2021-10-19 | 上海应用技术大学 | Heterogeneous structure type solar cell structure and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104134711B (en) | A kind of preparation method of perovskite solar cell | |
| CN104124291B (en) | A kind of perovskite solar cell and preparation method thereof | |
| CN106558650B (en) | A kind of preparation method of flexible copper indium gallium selenide/perovskite lamination solar cell | |
| CN105895806A (en) | CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof | |
| CN105789444A (en) | Perovskite solar cell based on vacuum evaporation coating method and preparation method of perovskite solar cell | |
| CN104269452A (en) | Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof | |
| CN104134720A (en) | Preparation method of organic and inorganic hybridization perovskite material growing by single-source flash evaporation method and plane solar cell of material | |
| CN105609643A (en) | Perovskite-type solar cell and preparation method | |
| AU2020100802A4 (en) | A fully-inorganic perovskite-type solar cell and its preparation method | |
| CN108123000A (en) | A kind of nano-rod shaped antimony selenide solar cell and preparation method thereof | |
| CN108447936B (en) | Preparation method of antimony-based double-junction laminated solar cell | |
| CN110335945B (en) | Double-electron-transport-layer inorganic perovskite solar cell and manufacturing method and application thereof | |
| CN112736200B (en) | Laminated battery and preparation method and application thereof | |
| CN108039411A (en) | A kind of Ca-Ti ore type solar cell and its decorative layer preparation method | |
| CN108807675A (en) | A kind of preparation method of solar battery of surface passivation perovskite thin film | |
| CN106159095A (en) | The preparation method of a kind of perovskite solaode and perovskite solaode | |
| CN106098820B (en) | A kind of new antimony selenide thin-film solar cells and preparation method thereof | |
| CN102280589B (en) | Organic solar cell and preparation method thereof | |
| CN107394044B (en) | Perovskite solar cell with conductive electrode and electron transmission layer and preparation method | |
| CN209963073U (en) | Novel high-efficiency double-sided incident light CdTe perovskite laminated photovoltaic cell | |
| CN110416413A (en) | A kind of perovskite solar cell and preparation method thereof of high-performance gradient electron transfer layer | |
| CN202308074U (en) | Organic solar battery | |
| CN207441751U (en) | A kind of homojunction perovskite thin film solar cell | |
| CN104377261A (en) | CdTe thin-film solar cell panel and manufacturing method | |
| CN105206746A (en) | Organic thin-film solar cell based on ternary solvent system and preparing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160824 |
|
| RJ01 | Rejection of invention patent application after publication |