CN104269452A - Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof - Google Patents

Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof Download PDF

Info

Publication number
CN104269452A
CN104269452A CN201410535451.5A CN201410535451A CN104269452A CN 104269452 A CN104269452 A CN 104269452A CN 201410535451 A CN201410535451 A CN 201410535451A CN 104269452 A CN104269452 A CN 104269452A
Authority
CN
China
Prior art keywords
silica
base film
perovskite
layer
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410535451.5A
Other languages
Chinese (zh)
Inventor
梁鹏
韩培德
廖显伯
向贤碧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Semiconductors of CAS
Original Assignee
Institute of Semiconductors of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Semiconductors of CAS filed Critical Institute of Semiconductors of CAS
Priority to CN201410535451.5A priority Critical patent/CN104269452A/en
Publication of CN104269452A publication Critical patent/CN104269452A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864Annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a perovskite solar battery made of silicon-based thin-film materials and a manufacturing method of the perovskite solar battery. The perovskite solar battery made of the silicon-based thin-film materials structurally comprises conductive glass, an n-type electron transfer layer arranged on the conductive glass, a perovskite photosensitive layer arranged on the n-type electron transfer layer, a p-type hole transfer layer arranged on the perovskite photosensitive layer and a metal counter electrode arranged on the p-type hole transfer layer. The perovskite solar battery and the manufacturing method have the advantages that the p-type silicon-based thin-film materials low in cost and easy to combine are adopted as the hole transfer layer, expensive spiro-OMeTAD organic materials are replaced, and the long wave response and battery efficiency of the silicon solar battery are improved.

Description

Perovskite solar cell of silica-base film material and preparation method thereof
Technical field
The present invention relates to technical field of solar cells, refer to perovskite solar cell of a kind of silica-base film material and preparation method thereof especially.
Background technology
Current hull cell mainly with cadmium telluride (CdTe) and the Copper Indium Gallium Selenide sun (CIGS) battery for main representative, the small size battery conversion efficiency of current World Report reaches 19.6% and 19.8% respectively.But the cadmium element relating to expensive rare element tellurium, indium, gallium and human body and environment are had to huge pollution prepared in material by above hull cell, therefore the development of these hull cells in following terawatt (TW) level installation total amount level can be extremely restricted.
In the recent period, the great interest of photovoltaic cell circle has been attracted as the new calcium perovskite like structure thin film solar cell of dye-sensitized cell " upgrade version ".Within the four short years, efficiency of solar cell prepared by the plumbous iodine material of the organic and inorganic mixing methylamine based on perovskite structure is advanced by leaps and bounds.The element that material is earth's crust rich reserves prepared by this battery, and preparation method is simple, and full processing procedure low temperature, thus has boundless industrialization prospect.The plumbous halide light-sensitive material of this perovskite structure, there is typical semiconductor material characteristic and suitable energy gap, can reach more than 95% to the absorption efficiency being less than 800nm wavelength sunlight, and charge carrier have very high mobility and diffusion length, is particularly suitable for photovoltaic application.
But the efficient calcium titanium ore battery of existing efficiency more than 15% without exception all have employed spiral shell two fluorenes (spiro-OMeTAD) this organic compound as p-type hole transmission layer (HTM), its price is more than ten times (4000RMB/g) of gold, significantly limit the commercial application process of perovskite battery, seeking the more suitable cheap p-type hole transmission layer being easy to synthesize becomes the important actuating force promoting device development.Material as p-type hole transmission layer must form at the interface place with calcium titanium ore bed that typical hole is selected, the heterojunction of electron repelling, namely require that it has suitable band gap width, electron affinity and band edge position, and there is good photoconductivity and mobility.For meeting above-mentioned requirements, the nitrogen element that can adulterate suitable in p-type silica-base film material or carbon or oxygen element, thus the band structure significantly changing p-type silica-base film material.The present invention proposes to utilize p-type silica-base film material band gap adjustable, doping type is variable, sunlight is had to the excellent specific properties such as certain absorption, realize substituting spiro-OMeTAD organic material, and then greatly advance the combination of amorphous silicon industry and perovskite battery.
Summary of the invention
The object of the invention is to, perovskite solar battery structure of a kind of silica-base film material and preparation method thereof is provided, have with low cost, the p-type silica-base film material being easy to synthesize is as hole transmission layer, replace expensive spiro-OMeTAD organic material, improve the long-wave response of silicon solar cell and the advantage of battery efficiency.
For achieving the above object, the present invention proposes a kind of perovskite solar battery structure of silica-base film material, comprising:
One electro-conductive glass;
One N-shaped electron transfer layer, it is produced on electro-conductive glass;
One perovskite photosensitive layer, it is produced on N-shaped electron transfer layer;
One p-type hole transmission layer, it is produced on perovskite photosensitive layer;
One metal counter electrode, it is produced on p-type hole transmission layer.
The present invention also provides a kind of perovskite solar battery structure of silica-base film material, comprising:
One electro-conductive glass;
One p-type hole transmission layer, it is produced on electro-conductive glass;
One perovskite photosensitive layer, it is produced on p-type electron transfer layer;
One N-shaped electron transfer layer, it is produced on perovskite photosensitive layer;
One metal counter electrode, it is produced on N-shaped hole transmission layer.
The present invention provides again a kind of preparation method of perovskite solar cell of silica-base film material, comprises the steps:
Step 1: get an electro-conductive glass;
Step 2: clean, dry up;
Step 3: depositing n-type electron transfer layer, perovskite photosensitive layer, p-type hole transmission layer and metal counter electrode successively on electro-conductive glass, complete preparation.
The present invention reoffers a kind of preparation method of perovskite solar cell of silica-base film material, comprises the steps:
Step 1: get an electro-conductive glass;
Step 2: clean, dry up;
Step 3: depositing p-type hole transmission layer, perovskite photosensitive layer, N-shaped electron transfer layer and metal counter electrode successively on electro-conductive glass, complete preparation.
The present invention has following beneficial effect:
1. utilize the present invention, the light activated charge carrier of long wave can be ensured at nearest silica-base film/perovskite heterojunction place separately, and add extra heterojunction electromotive force to device, significantly improve short circuit current and the open circuit voltage of device.
2. select layer material compared to other p-type holes, amorphous silicon band gap is adjustable, feature especially cheap and easy to manufacture, greatly can reduce the production cost of perovskite solar cell, accelerates the popularization of perovskite battery.
3. utilize the present invention, the full process vacuum depositing operation of battery can be realized, avoid solwution method and prepare p-type hole transmission layer technology, completely compatible with existing amorphous silicon battery production technology, be thus beneficial to large-scale production.
Accompanying drawing explanation
For further illustrating technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is perovskite/silicon-based thin-film lamination band structure schematic diagram;
Fig. 2 is the structural representation of the first embodiment of the present invention;
Fig. 3 is the structural representation of the second embodiment of the present invention;
Fig. 4 is the preparation flow figure of first embodiment of the invention;
Fig. 5 is the preparation flow figure of second embodiment of the invention.
Embodiment
Refer to shown in Fig. 1, the invention provides the operation principle of the perovskite solar cell of silica-base film material, be summarized as follows:
For the perovskite solar cell of NIP structure, be-3.93eV (relative to vacuum level) at the bottom of the conduction band of perovskite material, top of valence band is-5.43eV, and p-type noncrystal membrane is by alloy doping such as carbon, nitrogen, oxygen, conduction band limit and valence-band edge can be adjusted to higher than the corresponding band edge of perovskite I layer, the discrete band structure formed is as shown in Fig. 1 (a), and during unglazed photograph heat balance, band structure is as shown in Fig. 1 (b), and now Fermi level reaches unified.The heterostructure formed after connecting is applicable to hole and carries from perovskite I layer to P-type layer but electronics is stopped by conduction band, namely has obvious holoe carrier capacity gauge.In PIN structural, perovskite I layer can be with run-off the straight under both sides heterojunction Built-in field is through, and will speed up light induced electron and flow to N district, photohole flows to P district, produces significant photo-generated carrier field and helps collection effect.
Refer to shown in Fig. 2, the invention provides a kind of perovskite solar battery structure of silica-base film material, comprising:
One electro-conductive glass 1, the material of described electro-conductive glass 1 can be FTO glass, ito glass, AZO glass or IZO glass, and the square resistance of glass is 5-30 Ω/;
One N-shaped electron transfer layer 2, it is produced on electro-conductive glass 1, and described N-shaped electron transfer layer 2 is N-shaped zinc-oxide film, N-shaped thin film of titanium oxide or N-shaped silica-base film, and thickness is 5nm-50nm;
One perovskite photosensitive layer 3, it is produced on N-shaped electron transfer layer 2, and described perovskite photosensitive layer 3 is CH 3nH 3pbI 3or CH 3nH 3pbI 3-xcl x, thickness is 50nm-2000nm;
One p-type hole transmission layer 4, it is produced on perovskite photosensitive layer 3, described p-type hole transmission layer 4 is p-type silica-base film, comprise silicon-base alloy film, as the one in microcrystal silicon carbon alloy, microcrystal silicon nitrogen alloy, microcrystal silicon oxygen alloy, non-crystal silicon carbon alloy, amorphous silicon nitrogen alloy or non-crystalline/micro-crystalline silicon oxygen alloy or its combination.Deposition process is plasma enhanced chemical vapor deposition, and thickness is at 10nm-100nm, and the atomic fraction of carbon containing is at 10%-30%, and nitrogenous atomic fraction is at 10%-30%, and oxygen containing atomic fraction is at 10%-30%;
One metal counter electrode 5, it is produced on p-type hole transmission layer 4, and described metal counter electrode 5 is one in gold, silver, copper or aluminium or its combination.
Refer to shown in Fig. 3, the present invention provides a kind of perovskite solar battery structure of silica-base film material in addition, comprising:
One electro-conductive glass 1, the material of described electro-conductive glass 1 can be FTO glass, ito glass, AZO glass or IZO glass, and the square resistance of glass is 5-30 Ω/;
One p-type hole transmission layer 4, it is produced on electro-conductive glass 1, described p-type hole transmission layer 4 is p-type silica-base film, comprise silicon-base alloy film, as the one in microcrystal silicon carbon alloy, microcrystal silicon nitrogen alloy, microcrystal silicon oxygen alloy, non-crystal silicon carbon alloy, amorphous silicon nitrogen alloy or non-crystalline/micro-crystalline silicon oxygen alloy or its combination.Deposition process is plasma enhanced chemical vapor deposition, and thickness is at 10nm-100nm, and the atomic fraction of carbon containing is at 10%-30%, and nitrogenous atomic fraction is at 10%-30%, and oxygen containing atomic fraction is at 10%-30%;
One perovskite photosensitive layer 3, it is produced on p-type electron transfer layer 4, and described perovskite photosensitive layer 3 is CH 3nH 3pbI 3or CH 3nH 3pbI 3-xcl x, thickness is 50nm-2000nm;
One N-shaped electron transfer layer 2, it is produced on perovskite photosensitive layer 3, and described N-shaped electron transfer layer 2 is N-shaped zinc-oxide film, N-shaped thin film of titanium oxide or N-shaped silica-base film, and thickness is 5nm-50nm;
One metal counter electrode 5, it is produced on N-shaped electron transfer layer 2, and described metal counter electrode 5 is one in gold, silver, copper or aluminium or its combination.
Refer to Fig. 4, in conjunction with consulting Fig. 2, a kind of perovskite solar cell preparation method of silica-base film material, comprises the steps:
Step 1: get an electro-conductive glass 1.The material of described electro-conductive glass 1 can be FTO glass, ito glass, AZO glass or IZO glass, and the square resistance of glass is 5-30 Ω/, plays support and the electric action of follow-up film plating layer.
Step 2: clean, dry up.After the cleaning of ultrasonic wave organic solvent, dry up with nitrogen.Carry out local corrosion on the electrically conductive or cover, when avoiding follow-up plated film, upper/lower electrode forms short circuit.
Step 3: depositing n-type electron transfer layer 2, perovskite photosensitive layer 3, p-type hole transmission layer 4 and metal counter electrode 5 successively on electro-conductive glass 1, complete preparation.Described N-shaped electron transfer layer 2 is zinc oxide or thin film of titanium oxide, and thickness is 5nm-50nm, and deposition process is magnetron sputtering method, also can be N-shaped silica-base film, comprise N-shaped microcrystal silicon or the N-shaped amorphous silicon of hydrogen dilution or non-hydrogen dilution, thickness is 5-50nm, and deposition process is chemical vapour deposition technique.Can corrode to define source region figure to glass conductive layer with acid solution before depositing n-type electron transfer layer 2, and can clean with oxygen or nitrogen plasma effects on surface.Described perovskite photosensitive layer 3 is CH 3nH 3pbI 3or CH 3nH 3pbI 3-xcl xdeposition process is organic and inorganic double source coevaporation method or spin-coating method, thickness is 50nm-2000nm, through annealing steps after deposition, form stable perovskite photosensitive layer, annealing way comprises hot plate annealing, baking oven annealing, furnace anneal or sintering furnace annealing, and annealing temperature is 70-200 DEG C, and the time is 10min-100min.Described p-type hole transmission layer 4 is p-type silicon-base alloy film, comprises the one in microcrystal silicon carbon alloy, microcrystal silicon nitrogen alloy, microcrystal silicon oxygen alloy, non-crystal silicon carbon alloy, amorphous silicon nitrogen alloy or non-crystalline/micro-crystalline silicon oxygen alloy or its combination.Deposition process is chemical vapour deposition (CVD), comprise plasma activated chemical vapour deposition, hot-wire chemical gas-phase deposition, photoinduction chemical vapour deposition (CVD), thickness is at 10nm-100nm, the atomic fraction of carbon containing is at 10%-30%, nitrogenous atomic fraction is at 10%-30%, and oxygen containing atomic fraction is at 10%-30%.Described metal counter electrode 5 is one in gold, silver, copper or aluminium or its combination, and deposition process comprises electron beam evaporation or resistance heat evaporation.
Refer to Fig. 5, in conjunction with consulting Fig. 3, the perovskite solar cell preparation method of another silica-base film material, comprises the steps:
Step 1: get an electro-conductive glass 1.The material of described electro-conductive glass 1 can be FTO glass, ito glass, AZO glass or IZO glass, and the square resistance of glass is 5-30 Ω/, plays support and the electric action of follow-up film plating layer.
Step 2: clean, dry up.After the cleaning of ultrasonic wave organic solvent, dry up with nitrogen.Carry out local corrosion on the electrically conductive or cover, when avoiding follow-up plated film, upper/lower electrode forms short circuit.
Step 3: depositing p-type hole transmission layer 4, perovskite photosensitive layer 3, N-shaped electron transfer layer 2 and metal counter electrode 5 successively on electro-conductive glass 1, complete preparation.Described p-type hole transmission layer 4 is p-type silicon-base alloy film, comprises the one in microcrystal silicon carbon alloy, microcrystal silicon nitrogen alloy, microcrystal silicon oxygen alloy, non-crystal silicon carbon alloy, amorphous silicon nitrogen alloy or non-crystalline/micro-crystalline silicon oxygen alloy or its combination.Deposition process is chemical vapour deposition (CVD), comprise plasma activated chemical vapour deposition, hot-wire chemical gas-phase deposition, photoinduction chemical vapour deposition (CVD), thickness is at 10nm-100nm, the atomic fraction of carbon containing is at 10%-30%, nitrogenous atomic fraction is at 10%-30%, and oxygen containing atomic fraction is at 10%-30%.Described perovskite photosensitive layer 3 is CH 3nH 3pbI 3or CH 3nH 3pbI 3-xcl xdeposition process is organic and inorganic double source coevaporation method or spin-coating method, thickness is 50nm-2000nm, through annealing steps after deposition, form stable perovskite photosensitive layer, annealing way comprises hot plate annealing, baking oven annealing, furnace anneal or sintering furnace annealing, and annealing temperature is 70-200 DEG C, and the time is 10min-100min.Described N-shaped electron transfer layer 2 is zinc oxide or thin film of titanium oxide, and thickness is 5nm-50nm, and deposition process is magnetron sputtering method, also can be N-shaped silica-base film, comprise N-shaped microcrystal silicon or the N-shaped amorphous silicon of hydrogen dilution or non-hydrogen dilution, thickness is 5-50nm, and deposition process is chemical vapour deposition technique.Can corrode to define source region figure to glass conductive layer with acid solution before depositing n-type electron transfer layer 2, and can clean with oxygen or nitrogen plasma effects on surface.Described metal counter electrode 5 is one in gold, silver, copper or aluminium or its combination, and deposition process comprises electron beam evaporation or resistance heat evaporation.
Above-described specific embodiment, has carried out further detailed description to object of the present invention, technical scheme and beneficial effect, and institute it should be understood that and the foregoing is only specific embodiments of the invention, does not limit the present invention.Within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. a perovskite solar battery structure for silica-base film material, comprising:
One electro-conductive glass;
One N-shaped electron transfer layer, it is produced on electro-conductive glass;
One perovskite photosensitive layer, it is produced on N-shaped electron transfer layer;
One p-type hole transmission layer, it is produced on perovskite photosensitive layer;
One metal counter electrode, it is produced on p-type hole transmission layer.
2. a perovskite solar battery structure for silica-base film material, comprising:
One electro-conductive glass;
One p-type hole transmission layer, it is produced on electro-conductive glass;
One perovskite photosensitive layer, it is produced on p-type electron transfer layer;
One N-shaped electron transfer layer, it is produced on perovskite photosensitive layer;
One metal counter electrode, it is produced on N-shaped hole transmission layer.
3. the perovskite solar battery structure of silica-base film material according to claim 1 and 2, the material of wherein said N-shaped electron transfer layer is N-shaped zinc-oxide film, N-shaped thin film of titanium oxide or N-shaped silica-base film, and thickness is 5nm-50nm.
4. the perovskite solar battery structure of silica-base film material according to claim 1 and 2, the material of wherein said perovskite photosensitive layer is CH 3nH 3pbI 3or CH 3nH 3pbI 3-xcl x, thickness is 50nm-2000nm.
5. the perovskite solar battery structure of silica-base film material according to claim 1 and 2, the material of wherein said p-type hole transmission layer is p-type silica-base film, this p-type silica-base film comprises silicon-base alloy film, and the material of this p-type silica-base film is one in microcrystal silicon carbon alloy, microcrystal silicon nitrogen alloy, microcrystal silicon oxygen alloy, non-crystal silicon carbon alloy, amorphous silicon nitrogen alloy or non-crystalline/micro-crystalline silicon oxygen alloy or its combination; The thickness of this p-type silica-base film is 10nm-100nm.
6. a preparation method for the perovskite solar cell of silica-base film material, comprises the steps:
Step 1: get an electro-conductive glass;
Step 2: clean, dry up;
Step 3: depositing n-type electron transfer layer, perovskite photosensitive layer, p-type hole transmission layer and metal counter electrode successively on electro-conductive glass, complete preparation.
7. a preparation method for the perovskite solar cell of silica-base film material, comprises the steps:
Step 1: get an electro-conductive glass;
Step 2: clean, dry up;
Step 3: depositing p-type hole transmission layer, perovskite photosensitive layer, N-shaped electron transfer layer and metal counter electrode successively on electro-conductive glass, complete preparation.
8. the preparation method of the perovskite solar cell of the silica-base film material according to claim 6 or 7, the material of wherein said N-shaped electron transfer layer is zinc oxide or thin film of titanium oxide, thickness is 5nm-50nm, deposition process is magnetron sputtering method, or the material of N-shaped electron transfer layer is N-shaped silica-base film, thickness is 5-50nm, and deposition process is chemical vapour deposition technique.
9. the preparation method of the perovskite solar cell of the silica-base film material according to claim 6 or 7, the material of wherein said perovskite photosensitive layer is CH 3nH 3pbI 3or CH 3nH 3pbI 3-xcl x, thickness is 50nm-2000nm, and deposition process is organic and inorganic double source coevaporation method or spin-coating method.
10. the preparation method of the perovskite solar cell of the silica-base film material according to claim 6 or 7, the material of wherein said p-type hole transmission layer is p-type silicon-base alloy film, comprise one in microcrystal silicon carbon alloy, microcrystal silicon nitrogen alloy, microcrystal silicon oxygen alloy, non-crystal silicon carbon alloy, amorphous silicon nitrogen alloy or non-crystalline/micro-crystalline silicon oxygen alloy or and combination, deposition process is chemical vapour deposition (CVD), deposit thickness is 10nm-100nm, the atomic fraction of carbon containing is at 10%-30%, nitrogenous atomic fraction is at 10%-30%, and oxygen containing atomic fraction is at 10%-30%.
CN201410535451.5A 2014-10-11 2014-10-11 Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof Pending CN104269452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410535451.5A CN104269452A (en) 2014-10-11 2014-10-11 Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410535451.5A CN104269452A (en) 2014-10-11 2014-10-11 Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN104269452A true CN104269452A (en) 2015-01-07

Family

ID=52160959

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410535451.5A Pending CN104269452A (en) 2014-10-11 2014-10-11 Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN104269452A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104934503A (en) * 2015-06-12 2015-09-23 辽宁工业大学 Preparation method of perovskite solar cell light absorption layer material methylamine lead dibromide
CN104952963A (en) * 2015-04-14 2015-09-30 上海大学 Method for preparing TiO2-ZnO hetero-junction nanorod for perovskite solar cell
CN105047823A (en) * 2015-06-24 2015-11-11 华南师范大学 Semitransparent perovskite and crystalline silicon tandem laminated solar cell and preparation method thereof
CN105118922A (en) * 2015-09-14 2015-12-02 昆明学院 Perovskite-type light-sensitive material in cubic system structure and preparation method therefor
CN105226187A (en) * 2015-11-15 2016-01-06 河北工业大学 Film crystal silicon perovskite heterojunction solar cell and preparation method thereof
CN105244442A (en) * 2015-11-15 2016-01-13 河北工业大学 Thin film crystal silicon perovskite heterojunction solar cell manufacturing method
CN106299126A (en) * 2015-06-08 2017-01-04 南开大学 Perovskite battery of amorphous silicon membrane electric transmission Rotating fields and preparation method thereof
CN104362253B (en) * 2014-10-23 2017-03-22 河北工业大学 All solid state perovskite microcrystalline silicon composite solar battery and preparation method thereof
CN106449845B (en) * 2016-09-14 2018-05-04 南昌大学 One kind is based on Si/TiOxThe two-sided crystal-silicon solar cell of hetero-junctions
EP3657554A4 (en) * 2017-07-21 2021-03-17 LG Electronics Inc. Perovskite solar battery and tandem solar battery including same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013171520A1 (en) * 2012-05-18 2013-11-21 Isis Innovation Limited Optoelectronic device comprising perovskites
CN103681886A (en) * 2013-12-26 2014-03-26 中国科学院物理研究所 Support layer for perovskite base thin film solar cell and production method of support layer
WO2014045021A1 (en) * 2012-09-18 2014-03-27 Isis Innovation Limited Optoelectronic device
CN103904218A (en) * 2014-03-28 2014-07-02 中国科学院上海技术物理研究所 Perovskite thin-film solar cell structure based on metal particles

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013171520A1 (en) * 2012-05-18 2013-11-21 Isis Innovation Limited Optoelectronic device comprising perovskites
WO2014045021A1 (en) * 2012-09-18 2014-03-27 Isis Innovation Limited Optoelectronic device
CN103681886A (en) * 2013-12-26 2014-03-26 中国科学院物理研究所 Support layer for perovskite base thin film solar cell and production method of support layer
CN103904218A (en) * 2014-03-28 2014-07-02 中国科学院上海技术物理研究所 Perovskite thin-film solar cell structure based on metal particles

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104362253B (en) * 2014-10-23 2017-03-22 河北工业大学 All solid state perovskite microcrystalline silicon composite solar battery and preparation method thereof
CN104952963A (en) * 2015-04-14 2015-09-30 上海大学 Method for preparing TiO2-ZnO hetero-junction nanorod for perovskite solar cell
CN106299126A (en) * 2015-06-08 2017-01-04 南开大学 Perovskite battery of amorphous silicon membrane electric transmission Rotating fields and preparation method thereof
CN104934503B (en) * 2015-06-12 2017-03-08 辽宁工业大学 A kind of preparation method of perovskite solar cell light absorption layer material methyl amine lead bromide
CN104934503A (en) * 2015-06-12 2015-09-23 辽宁工业大学 Preparation method of perovskite solar cell light absorption layer material methylamine lead dibromide
CN105047823A (en) * 2015-06-24 2015-11-11 华南师范大学 Semitransparent perovskite and crystalline silicon tandem laminated solar cell and preparation method thereof
CN105118922A (en) * 2015-09-14 2015-12-02 昆明学院 Perovskite-type light-sensitive material in cubic system structure and preparation method therefor
CN105118922B (en) * 2015-09-14 2017-12-22 昆明学院 A kind of cubic crystal structure Ca-Ti ore type light-sensitive material and preparation method thereof
CN105244442A (en) * 2015-11-15 2016-01-13 河北工业大学 Thin film crystal silicon perovskite heterojunction solar cell manufacturing method
CN105226187A (en) * 2015-11-15 2016-01-06 河北工业大学 Film crystal silicon perovskite heterojunction solar cell and preparation method thereof
CN105226187B (en) * 2015-11-15 2018-01-30 河北工业大学 Film crystal silicon perovskite heterojunction solar battery and preparation method thereof
CN106449845B (en) * 2016-09-14 2018-05-04 南昌大学 One kind is based on Si/TiOxThe two-sided crystal-silicon solar cell of hetero-junctions
EP3657554A4 (en) * 2017-07-21 2021-03-17 LG Electronics Inc. Perovskite solar battery and tandem solar battery including same

Similar Documents

Publication Publication Date Title
CN104269452A (en) Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof
CN102569442B (en) Thin film solar cell and method for manufacturing the same
CN101814553B (en) Light-assistant method for preparing light absorption layer of copper-indium-gallium-selenium film solar cell
CN104134720A (en) Preparation method of organic and inorganic hybridization perovskite material growing by single-source flash evaporation method and plane solar cell of material
CN103426943B (en) A kind of copper-zinc-tin-sulfur film solar cell rhythmo structure and its preparation method
CN100541824C (en) A kind of mechanical laminated AlSb/CIS thin film solar cell
CN106653898B (en) A kind of CZTS solar battery
CN104659123A (en) Compound film solar battery and manufacturing method thereof
CN106098820B (en) A kind of new antimony selenide thin-film solar cells and preparation method thereof
Sajid et al. Computational study of ternary devices: stable, low-cost, and efficient planar perovskite solar cells
CN105826425A (en) Preparation method for preparing copper-zinc-tin-sulfide (Cu-Zn-Sn-S) thin film solar cell
CN104332515B (en) Copper indium diselenide nanocrystalline silicon thin film solar cell with graphene as conductive material and preparation method thereof
CN109638096A (en) A kind of compound semiconductor thin film solar cell preparation method
CN101847669B (en) I2-II-IV-VI4 base thin film solar battery
JP2014503125A (en) Solar cell and manufacturing method thereof
CN109671803A (en) A kind of thin-film solar cells preparation method
CN105489672A (en) Method for preparing copper indium diselenide photoelectric thin film by chloride system through two-step method
CN105552166A (en) Method for preparing copper-indium-diselenide photoelectric film by two-step method of nitrate system
CN103339741B (en) Solar cell device and its manufacture method
CN104143579A (en) Antimony-base compound thin film solar cell and manufacturing method thereof
CN106784113A (en) A kind of silicon based hetero-junction solar cell and preparation method thereof
CN105529243A (en) Method for copper indium diselenide optoelectronic film by sulphate system in two-step process
CN101707219B (en) Solar cell with intrinsic isolation structure and production method thereof
CN103469170B (en) A kind of sputtering target for thin-film solar cells
CN105355674B (en) There is the flexible cadmium telluride solar cell of Graphene interposed layer

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150107

C02 Deemed withdrawal of patent application after publication (patent law 2001)