CN113782566A - Laminated battery based on back contact and preparation method thereof - Google Patents
Laminated battery based on back contact and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 230000031700 light absorption Effects 0.000 claims abstract description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 230000005641 tunneling Effects 0.000 claims description 43
- 239000010408 film Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000005525 hole transport Effects 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000862 absorption spectrum Methods 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 229910014299 N-Si Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a back contact-based laminated cell and a preparation method thereof, and relates to the technical field of solar cell production. Combining the MWT, perovskite and HJT battery technologies, including stacked HJT bottom and perovskite top cells; the HJT bottom cell sequentially comprises an N + type doped amorphous silicon layer, a first intrinsic amorphous silicon passivation layer, an N type monocrystalline silicon substrate, a second intrinsic amorphous silicon passivation layer, a P type doped amorphous silicon layer, a back TCO layer and a back grid line electrode from top to bottom; the perovskite top cell sequentially comprises a front grid line electrode, a front TCO layer, a top electrode buffer layer, an electron transmission layer, a perovskite light absorption layer and a hole transmission layer from top to bottom. The invention combines the MWT, perovskite and HJT battery technologies, gives full play to the advantage that the perovskite HJT laminated battery can expand the absorption spectrum to be wider, and accordingly breaks the efficiency limit of a single junction battery.
Description
Technical Field
The invention relates to the technical field of solar cell production, in particular to a structure design and preparation method of an MWT type perovskite heterojunction laminated cell.
Background
A perovskite-type solar cell is a solar cell using a perovskite-type organic metal halide semiconductor as a light absorbing material. In principle, the band gap of the perovskite material is higher than that of the silicon material, and the height of the perovskite material is adjustable, so that high-energy ultraviolet and blue-green visible light can be more effectively utilized, and the silicon solar cell can effectively utilize infrared light which cannot be absorbed by the perovskite material. Therefore, if the high-efficiency single cells can be combined in a lamination mode, the theoretical efficiency limit of the traditional silicon photovoltaic cell can be broken through, and the efficiency of the silicon photovoltaic cell can be further improved.
The MWT (Metal Wrap Through) battery has a back contact structure, and because the front surface is not provided with the main grid, the shading area can be effectively reduced, and meanwhile, the silver paste consumption is greatly reduced. Compared with other back contact structures such as IBC, the method has the advantages of simple process, low cost and better cost performance.
An HIT (heterojunction with Intrinsic thin) battery, also called HJT battery, has the advantages of high conversion efficiency, low temperature coefficient, low attenuation, good low-light property and the like, but the consumption and the unit price of the low-temperature silver paste are high at present, the low-temperature silver paste occupies the highest proportion of the BOM cost, and the cost performance is relatively poor.
Therefore, how to combine the MWT and the perovskite HJT tandem cell technologies together can not only exert the advantages of the MWT structure and the perovskite HJT tandem cell simultaneously to improve the efficiency of the tandem cell, but also exert the characteristic of low silver consumption on the front surface of the MWT structure to reduce the manufacturing cost of the tandem cell, i.e., a technical problem to be solved by those skilled in the art is urgently needed.
Disclosure of Invention
Aiming at the problems, the invention provides a laminated cell based on back contact and a preparation method thereof, wherein the MWT, perovskite and HJT cell technologies are combined, the advantage that the absorption spectrum of the perovskite HJT laminated cell can be expanded to be wider is fully exerted, and therefore the efficiency limit of a single junction cell is broken through.
The technical scheme of the invention is as follows: the laminated battery sequentially comprises an HJT bottom battery and a perovskite top battery which are superposed;
the HJT bottom cell sequentially comprises an N + type doped amorphous silicon layer 8, a first intrinsic amorphous silicon passivation layer 9, an N type monocrystalline silicon substrate 10, a second intrinsic amorphous silicon passivation layer 11, a P type doped amorphous silicon layer 12, a back TCO layer 13 and a back grid line electrode 14 from top to bottom;
the perovskite top battery sequentially comprises a front grid line electrode 1, a front TCO layer 2, a top electrode buffer layer 3, an electron transport layer 4, a perovskite light absorption layer 5, a hole transport layer 6 and a tunneling layer 7 from top to bottom; the perovskite top battery is connected with the HJT bottom battery through the tunneling layer 7.
The tunneling layer 7 is a transparent conductive film, a microcrystalline-amorphous film or SnO2The material is prepared.
And a through hole which sequentially penetrates through the perovskite top battery, the tunneling layer and the HJT bottom battery is also formed in the laminated battery, an in-hole electrode 16 is arranged in the through hole, and in-hole insulating glue 15 is arranged between the inner wall of the through hole and the in-hole electrode 16.
The preparation method comprises the following steps:
s01, cleaning and polishing the silicon wafer: texturing and cleaning an N-type monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s02, depositing intrinsic amorphous silicon layers on two sides;
s03, depositing an N + type doped amorphous silicon layer 8 on the front surface;
s04, depositing the P-type doped amorphous silicon layer 12 on the back surface;
s05, depositing the back TCO layer 13 on the surface of the P-type doped amorphous silicon layer 12;
s06, preparing a tunneling layer 7 on the surface plated with the N + type doped amorphous silicon layer 8;
s07, preparing a hole transport layer 6 on the tunneling layer 7;
s08, preparing a perovskite light absorption layer 5 on the hole transport layer 6;
s09, preparing an electron transport layer 4 on the perovskite light absorption layer 5;
s10, preparing a top electrode buffer layer 3 on the electron transport layer 4;
s11, preparing a front TCO layer 2 on the top electrode buffer layer 3 to obtain a laminated semi-finished cell;
s12, carrying out laser drilling on the obtained laminated semi-finished battery;
s13, insulating treatment in the hole: coating insulating glue on the inner wall of the hole and the outer edge of the open hole by printing the insulating glue;
s14, screen printing of hole plugging slurry: printing hole plugging slurry into the holes with the inner walls solidified with the insulating glue from the back;
s15, preparing a back gate line electrode 14 on the back TCO layer 13;
s16, preparing a front grid line electrode 1 on the front TCO layer 2; and (6) finishing.
The tunneling layer prepared in step S06 is a transparent conductive film ITO.
The tunneling layer prepared in step S06 is a tunneling junction layer formed by reverse-heavily doping a microcrystalline-amorphous thin film.
The tunneling layer prepared in the step S06 is made of SnO2The material is prepared.
The invention punches the laminated cell, the front grid line electrode is wound to the back of the laminated cell through the electrode in the hole and forms a back contact structure with the original grid line electrode on the back, the preparation of the perovskite HJT laminated cell is combined with the MWT back contact, a new process route of the MWT perovskite HJT laminated cell product is created, compared with the perovskite HJT laminated cell product, the MWT perovskite HJT laminated cell product structure and the process preparation method provided by the invention have the following beneficial effects:
the front side of the perovskite HJT laminated cell has more light receiving areas, the efficiency is further improved, and the electricity consumption cost is reduced;
the MWT and perovskite HJT laminated cell has structural advantages, can be adapted to a 100-micron-thickness silicon wafer, and further reduces the cost;
compared with the traditional perovskite HJT laminated cell, the low-temperature silver paste consumption in the preparation of the front grid line electrode is greatly reduced, and the back contact structure can improve the welding strip type connection into the plane connection of the conductive core plate in the component packaging process, thereby simplifying the welding process and improving the packaging yield;
and fourthly, the protection of the insulating glue in the hole is realized, and the electric leakage and parasitic shunt resistance caused by the electrode in the hole can be effectively prevented.
The invention combines the MWT, perovskite and HJT battery technologies, gives full play to the advantage that the perovskite HJT laminated battery can expand the absorption spectrum to be wider, and accordingly breaks the efficiency limit of a single junction battery. But inevitable simultaneously, the front surface can shield incident light to a certain extent due to the existence of the metal main grid line, and power loss is generated. And due to the adoption of the MWT technology, the metal main grid line on the front side can be omitted, and the light receiving area of the front side of the laminated battery is increased. On the other hand, the perovskite HJT tandem cell requires a large amount of low-temperature silver paste and a high unit price, which is the highest cost of BOM and is one of the problems to be solved on the industrial road. After the MWT technology is introduced, the consumption of the front silver paste can be greatly reduced, and the industrialization is facilitated.
Drawings
Figure 1 is a schematic view of the structure of a laminate battery,
FIG. 2 is a flow chart of a laminate battery fabrication;
in the figure, 1 is a front grid line electrode, 2 is a front TCO layer, 3 is a top electrode buffer layer, 4 is an electron transport layer, 5 is a perovskite light absorption layer, 6 is a hole transport layer, 7 is a tunneling layer, 8 is an N < + > type doped amorphous silicon layer, 9 is a first intrinsic amorphous silicon passivation layer, 10 is an N-type monocrystalline silicon substrate, 11 is a second intrinsic amorphous silicon passivation layer, 12 is a P-type doped amorphous silicon layer, 13 is a back TCO layer, 14 is a back grid line electrode, 15 is an in-hole insulating glue, and 16 is an in-hole electrode.
Detailed Description
In order to clearly explain the technical features of the present patent, the following detailed description of the present patent is provided in conjunction with the accompanying drawings.
As shown in fig. 1-2, the stacked battery sequentially includes a stacked HJT bottom battery and a perovskite top battery;
the HJT bottom cell sequentially comprises an N < + > type doped amorphous silicon layer N < + > -Si (a), a first intrinsic amorphous silicon passivation layer i < - > Si (a), an N-type monocrystalline silicon substrate N < - > Si (c), a second intrinsic amorphous silicon passivation layer i < - > Si (a), a P-type doped amorphous silicon layer P < - > Si (a), a back TCO layer and a back grid line electrode from top to bottom;
the perovskite top battery sequentially comprises a front grid line electrode, a front TCO layer, a top electrode buffer layer, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer and a tunneling layer from top to bottom; the perovskite top battery is connected with the HJT bottom battery through the tunneling layer.
Because the positive and negative electrodes of the traditional perovskite HJT laminated battery are respectively arranged on the front and the back surfaces of the laminated battery, a back contact structure cannot be formed, and the silver consumption is increased due to the existence of the main grid when the front grid line electrode is prepared. This results in an increase in cost, which is disadvantageous for the industrialization of the laminate battery.
The semi-finished battery is punched, and the inner wall of the hole and the outer edge of the hole opening are subjected to insulation protection. And after insulation protection, the front grid line electrode is wound to the back of the laminated battery through the electrode in the hole to form a back contact structure with the original grid line electrode on the back. The front surface is not provided with the main grid, so that the consumption of the front silver paste is greatly reduced.
The interface of any double-end laminated cell is a key point, the upper layer cell is matched with the crystal lattice of the lower layer cell, and in order to solve the problem, materials which cannot be mismatched in crystal lattice are not required to be selected, and a buffer layer with gradually changed components is not required to be added. So-called double-ended stacked cells are only those in which the final cell lead-out electrodes are positive and negative, and are essentially all four-terminal, since each subcell necessarily has N and P terminals. As a series structure, the lower end of the top cell and the upper end of the bottom cell are internally connected together, which can be understood as a wire stringing them together. But leads are not feasible as a "monolithically" fabricated laminate cell. It is necessary to introduce a "tunneling layer" that combines the majority of one cell with the majority of another subcell of opposite polarity, as by connecting them together with wires.
The tunneling layer is a transparent conductive film, a microcrystalline-amorphous film or SnO2The material is prepared.
In other words, this layer tunnelsThe layer may be a transparent conductive film such as ITO. Or a microcrystalline-amorphous film, such as a tunnel junction layer made of inversely heavily doped silicon. SnO may also be used2The material can be used as an electron transport layer of a perovskite layer and a contact layer of a bottom HJT battery, so that the independent preparation of a tunneling layer is omitted.
And a through hole which sequentially penetrates through the perovskite top battery, the tunneling layer and the HJT bottom battery is also formed in the laminated battery, an in-hole electrode 16 is arranged in the through hole, and in-hole insulating glue 15 is arranged between the inner wall of the through hole and the in-hole electrode 16.
And subsequently, the front grid line electrode can be connected with the hole internal electrode, so that the front grid line electrode and the hole internal electrode are wound on the back of the laminated battery through the hole internal electrode to form a back contact structure with the original grid line electrode on the back, and the preparation of the perovskite HJT laminated battery is combined with the MWT back contact. The insulating gel in the hole has stable chemical property, does not react with each layer of substance, only plays an insulating role, and can effectively prevent the formation of electric leakage and parasitic shunt resistance caused by the electrode in the hole.
The preparation method comprises the following steps:
s01, cleaning and polishing the silicon wafer: texturing and cleaning an N-type monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s02, depositing intrinsic amorphous silicon layers on two sides; thereby preparing a first intrinsic amorphous silicon passivation layer 9 and a second intrinsic amorphous silicon passivation layer 11 on the upper and lower sides of the N-type monocrystalline silicon substrate 10;
s03, depositing an N + type doped amorphous silicon layer 8 on the front surface; thereby preparing an N + type doped amorphous silicon layer 8 on the first intrinsic amorphous silicon passivation layer 9;
s04, depositing the P-type doped amorphous silicon layer 12 on the back surface; thereby preparing a P-type doped amorphous silicon layer 12 under the second intrinsic amorphous silicon passivation layer 11;
s05, depositing the back TCO layer 13 on the surface of the P-type doped amorphous silicon layer 12; thereby preparing a back TCO layer 13 under the P-type doped amorphous silicon layer 12;
s06, preparing a tunneling layer 7 on the surface plated with the N + type doped amorphous silicon layer 8; the preparation method comprises the following specific steps:
tunneling layer (ITO): the ITO is In2O3Sn element is doped in a certain proportion. After doping Sn element, the transmissivity of the tunneling layer will decrease, but the carrier mobility of the film layer will increase. Preparing an ITO layer on a substrate by adopting a radio frequency magnetron sputtering method, wherein the radio frequency is 13.56MHz, and a target material is an ITO ceramic target (90 wt% of In)2O3And 10wt% SnO2Sintered to form). Placing the substrate on a sample holder, adjusting the distance between the substrate and the target to 65mm, vacuumizing to 7x10-4Pa, and filling high-purity O2And Ar. The flow rate of Ar was maintained at 170sccm, and sputtering was started when the gas pressure was increased to 0.1 Pa.
Tunneling layer (In)2O3）：In2O3The film layer does not contain doping elements and has high transmittance, but the carrier mobility is not high. Preparing In on a substrate by radio frequency magnetron sputtering method2O3The film layer, the radio frequency is 13.56MHz, the target material is ceramic target (pure In)2O3Composition). Placing the substrate on a sample holder, adjusting the distance between the substrate and the target to 80mm, vacuumizing to 7.5x10-4Pa, and filling high-purity O2And Ar. The flow rate of Ar was maintained at 165sccm, and sputtering was started when the gas pressure was increased to 0.1 Pa.
Tunneling layer (tunneling junction composed of p +/n + double layer crystalline silicon thin film): depositing a high-quality p + crystalline silicon film by adopting Plasma Enhanced Chemical Vapor Deposition (PECVD) and taking high-hydrogen diluted silane and borane as reaction gases; high-hydrogen diluted silane and phosphine are used as reaction gases to deposit the high-quality n + crystalline silicon film. The p +/n + double-layer crystalline silicon thin film forms a tunneling junction.
S07, preparing a hole transport layer 6 on the tunneling layer 7; the preparation method comprises the following specific steps:
adding a nickel source and a copper source into water, stirring and dissolving to prepare a spin-coating liquid; and spin-coating the spin-coating liquid on a substrate, and then sintering at 350-550 ℃ to obtain the hole transport layer. The preparation method does not adopt organic solvent, thereby avoiding the harm of the organic solvent to human body and environment.
S08, preparing a perovskite light absorption layer 5 on the hole transport layer 6; the preparation method comprises the following specific steps:
firstly, preparing PbI with double-layer structure by using micro-distance vacuum thermal evaporation method2Film, bonding with CH3NH3I steam treatment of PbI2Film, converting it into CH of double-layer structure3NH3PbI thin film, this thin film is perovskite light absorption layer.
S09, preparing an electron transport layer 4 on the perovskite light absorption layer 5; the preparation method comprises the following specific steps:
preparing Al-doped TiO on perovskite light absorption layer by adopting thermal atomic layer deposition technology2The film is used as an electron transport layer of the perovskite solar cell, and the preferred Al is TiO2The doping concentration ratio is 1: 99.
s10, preparing a top electrode buffer layer 3 on the electron transport layer 4; the preparation method comprises the following specific steps:
the top electrode buffer layer on the electron transport layer can avoid the damage of ions to the perovskite light absorption layer during the subsequent deposition of the TCO layer. A solution method is adopted to prepare an Al-doped ZnO solution, the Al-doped ZnO solution is spin-coated on a substrate and annealed to form a top electrode buffer layer. In addition, the doping concentration of Al is required to be 2mol%, so that the work function matching between the electron transport layer and the TCO layer can be better adjusted.
S11, preparing a front TCO layer 2 on the top electrode buffer layer 3 to obtain a laminated semi-finished cell; the preparation method comprises the following specific steps:
the TCO layer can be prepared by adopting a magnetron sputtering method PVD or reactive plasma deposition RPD, the RPD method is selected in the invention, the effective particle energy is distributed in the range of 20-30eV, and the substrate is not exposed in plasma, so that the damage to the surface of the substrate is small. The RPD method controls the shape of plasma using a specific magnetic field, thereby generating stable, uniform, high-density plasma. The ion source is bombarded on the target after being deflected by a magnetic field, and target atoms are bombarded out and deposited on a substrate to form a TCO layer.
S12, carrying out laser drilling on the obtained laminated semi-finished battery;
s13, insulating treatment in the hole: coating insulating glue on the inner wall of the hole and the outer edge of the open hole by printing the insulating glue; forming an in-hole insulating paste 15;
s14, screen printing of hole plugging slurry: printing hole plugging slurry into the holes with the inner walls solidified with the insulating glue from the back; forming an in-hole electrode 16;
s15, preparing a back gate line electrode 14 on the back TCO layer 13;
s16, preparing a front grid line electrode 1 on the front TCO layer 2; and (6) finishing.
The tunneling layer prepared in step S06 may be a transparent conductive film ITO. Or a tunneling junction layer made by reverse heavily doping of a microcrystalline-amorphous film, namely a tunneling junction formed by a p +/n + double-layer crystalline silicon film. May also be made of SnO2The material is prepared. Therefore, the perovskite-type electron transport layer can be used as an electron transport layer of the perovskite layer and can also be used as a contact layer of the bottom layer HJT battery, and the independent preparation of a tunneling layer is omitted.
The first embodiment is as follows:
the invention provides an MWT type perovskite HJT laminated battery product, which is shown in a figure 1 and a figure 2 and sequentially comprises the following components from top to bottom: the positive grid line electrode, the positive TCO, the top electrode buffer layer, the electron transmission layer, the perovskite light absorption layer, the hole transmission layer, the tunneling layer (ITO), the N < + > -Si doped amorphous silicon layer N < + > -Si (a), the first intrinsic amorphous silicon passivation layer i < - > -Si (a), the N-Si substrate N < - > -Si (c), the second intrinsic amorphous silicon passivation layer i < - > -Si (a), the P-type amorphous silicon doped layer P < - > -Si (a), the back TCO layer and the back grid line electrode.
Example two:
the invention provides an MWT type perovskite HJT laminated battery product, which is shown in a figure 1 and a figure 2 and sequentially comprises the following components from top to bottom: front grid line electrode, front TCO, top electrode buffer layer, electron transport layer, perovskite light absorption layer, hole transport layer, tunneling layer (In)2O3) The N + type doped amorphous silicon layer N + -Si (a), a first intrinsic amorphous silicon passivation layer i-Si (a), an N type monocrystalline silicon substrate N-Si (c), a second intrinsic amorphous silicon passivation layer i-Si (a), a P type doped amorphous silicon layer P-Si (a), a back TCO layer and a back grid line electrode.
Example three:
the invention provides an MWT type perovskite HJT laminated battery product, which is shown in a figure 1 and a figure 2 and sequentially comprises the following components from top to bottom: the positive grid line electrode, the positive TCO, the top electrode buffer layer, the electron transmission layer, the perovskite light absorption layer, the hole transmission layer, the tunneling layer (a tunneling junction formed by a P +/N + double-layer crystalline silicon film), the N + type doped amorphous silicon layer N + -Si (a), the first intrinsic amorphous silicon passivation layer i-Si (a), the N type monocrystalline silicon substrate N-Si (c), the second intrinsic amorphous silicon passivation layer i-Si (a), the P type doped amorphous silicon layer P-Si (a), the back TCO layer and the back grid line electrode.
While the invention has been described in terms of its preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (6)
1. The laminated battery based on the back contact is characterized by comprising an HJT bottom battery and a perovskite top battery which are stacked in sequence;
the HJT bottom cell sequentially comprises an N + type doped amorphous silicon layer (8), a first intrinsic amorphous silicon passivation layer (9), an N type monocrystalline silicon substrate (10), a second intrinsic amorphous silicon passivation layer (11), a P type doped amorphous silicon layer (12), a back TCO layer (13) and a back grid line electrode (14) from top to bottom;
the perovskite top battery sequentially comprises a front grid line electrode (1), a front TCO layer (2), a top electrode buffer layer (3), an electron transmission layer (4), a perovskite light absorption layer (5), a hole transmission layer (6) and a tunneling layer (7) from top to bottom; the perovskite top battery is connected with the HJT bottom battery through a tunneling layer (7);
the laminated battery is further provided with a through hole which sequentially penetrates through the perovskite top battery, the tunneling layer (7) and the HJT bottom battery, an in-hole electrode (16) is arranged in the through hole, and in-hole insulating glue (15) is arranged between the inner wall of the through hole and the in-hole electrode (16).
2. The back-contact based laminated cell according to claim 1, wherein the tunneling layer (7) is a transparent conductive layerElectric films, microcrystalline-amorphous films or from SnO2The material is prepared.
3. The method for preparing the back contact-based laminated battery as claimed in claim 1, which comprises the following steps:
s01, cleaning and polishing the silicon wafer: texturing and cleaning an N-type monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s02, depositing intrinsic amorphous silicon layers on two sides;
s03, depositing an N + type doped amorphous silicon layer (8) on the front surface;
s04, depositing a P-type doped amorphous silicon layer (12) on the back surface;
s05, depositing a back TCO layer (13) on the surface plated with the P-type doped amorphous silicon layer (12);
s06, preparing a tunneling layer (7) on the surface plated with the N + type doped amorphous silicon layer (8);
s07, preparing a hole transport layer (6) on the tunneling layer (7);
s08, preparing a perovskite light absorption layer (5) on the hole transport layer (6);
s09, preparing an electron transport layer (4) on the perovskite light absorption layer (5);
s10, preparing a top electrode buffer layer (3) on the electron transport layer (4);
s11, preparing a front TCO layer (2) on the top electrode buffer layer (3) to obtain a laminated semi-finished cell;
s12, carrying out laser drilling on the obtained laminated semi-finished battery;
s13, insulating treatment in the hole: coating insulating glue on the inner wall of the hole and the outer edge of the open hole by printing the insulating glue;
s14, screen printing of hole plugging slurry: printing hole plugging slurry into the holes with the inner walls solidified with the insulating glue from the back;
s15, preparing a back grid line electrode (14) on the back TCO layer (13);
s16, preparing a front grid line electrode (1) on the front TCO layer (2); and (6) finishing.
4. The method for preparing a back contact-based stacked cell according to claim 3, wherein the tunneling layer (7) prepared in step S06 is a transparent conductive film ITO.
5. The method of claim 3, wherein the tunneling layer (7) prepared in step S06 is a tunneling junction layer formed by reverse-doping microcrystalline-amorphous thin film.
6. The method for preparing a back-contact based laminated cell according to claim 3, wherein the tunneling layer (7) prepared in step S06 is made of SnO2The material is prepared.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114005909A (en) * | 2021-12-31 | 2022-02-01 | 南京日托光伏新能源有限公司 | Manufacturing and packaging method of MWT (Metal wrap through) assembly for increasing light secondary absorption |
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