CN213366623U

CN213366623U - Four-terminal perovskite and crystalline silicon tandem cell assembly

Info

Publication number: CN213366623U
Application number: CN202022878261.7U
Authority: CN
Inventors: 不公告发明人
Original assignee: Hangzhou Microquanta Semiconductor Corp ltd
Current assignee: Hangzhou Microquanta Semiconductor Corp ltd
Priority date: 2020-12-05
Filing date: 2020-12-05
Publication date: 2021-06-04
Anticipated expiration: 2030-12-05

Abstract

The utility model relates to a four terminal perovskite and crystal silicon tandem cell subassembly, include from last to down the last encapsulation glass that sets gradually, upper rubber film, perovskite battery pack cluster, middle glued film, crystal silicon battery pack cluster, lower floor's glued film and down encapsulation glass, the perovskite battery pack cluster has close short-circuit current and open circuit voltage with crystal silicon battery pack cluster, a perovskite battery pack cluster and a common dc-to-ac converter of crystal silicon battery pack cluster. The utility model discloses a perovskite battery pack cluster is similar with crystalline silicon battery pack's output, and two kinds of battery pack clusters can be connected with arbitrary cluster parallel mode from top to bottom, make four terminal tandem cell's connection method have the variety, are four terminal perovskite and crystalline silicon tandem cell subassemblies that do not have current loss.

Description

Four-terminal perovskite and crystalline silicon tandem cell assembly

Technical Field

The utility model belongs to the technical field of the preparation of perovskite battery pack, in particular to four terminal perovskite and crystal silicon tandem cell subassembly.

Background

The current matching of the current of an upper battery and a lower battery is required for the existing two-terminal perovskite and crystalline silicon laminated battery, the perovskite at the top is required to have a high band gap (about 1.7eV, which is 1.5 eV-1.6 eV higher than the band gap of a common perovskite light absorption layer), and the defects of complex preparation method, poor repeatability and the like are not suitable for commercial application. Two-terminal tandem cells are generally connected in series, but the voltage difference between perovskite cells and crystalline silicon cells is large, which affects the improvement of the overall performance of the stack. And the series resistance produced by the transparent electrode of the top semi-transparent perovskite cell will gradually increase as the size becomes larger.

The perovskite battery with the four terminals has a simple preparation method, the circuits of the two batteries are mutually independent, the existing crystalline silicon component can be directly used for preparing the four-terminal laminated battery, and only one semitransparent perovskite photovoltaic component needs to be additionally prepared to be superposed for use, so that the perovskite battery has huge commercial application potential. In a general four-terminal laminated cell assembly, the original series structure and cutting mode of a perovskite assembly are reserved, in the cutting mode, after perovskite sub-cells in a single perovskite cell are connected in series, the open-circuit voltage is increased, and the short-circuit current is unchanged, including the published patent with the publication number of CN111312905A, although the top and the bottom can realize separate series-parallel circuits, and the series-parallel circuits have no influence on each other, due to the inherent property of perovskite materials, the perovskite materials have higher open-circuit voltage in unit area than a crystalline silicon cell assembly, but the short-circuit current is lower than the crystalline silicon cell assembly. Therefore, the perovskite cell assembly on the top and the crystalline silicon cell assembly on the bottom have different output power per unit area, two inverters suitable for different output voltages and currents are needed, the price of the inverter is very high, and the commercial application of the four-terminal perovskite and crystalline silicon laminated cell assembly is limited. And the laser cutting process (e.g., three cuts to form a series structure) of conventional perovskite battery components can result in numerous laser cut grooves in the battery components that increase the risk of attenuation of the battery components.

Due to different trends of band gaps of perovskite and crystalline silicon along with temperature change, perovskite and crystalline silicon tandem cell components of two-terminal structures or four-terminal structures have the defect that current and voltage cannot be completely matched. When the solar cell is used outdoors, the temperature is higher than 50 ℃, so that the band gaps of the light absorption layers of the two cells are changed, the voltage, the current and the output power have larger difference, and the attenuation aging of devices such as a cell assembly, an adapter and the like is accelerated. Meanwhile, for the perovskite and crystalline silicon laminated cell assembly with the four-terminal structure, the voltage of the perovskite cell assembly at the top is basically greater than 0.8V, but the voltage of the crystalline silicon cell assembly at the bottom is smaller than 0.7V, if the currents and the voltages of the two cell assemblies at the top and the bottom are not matched, two inverters suitable for different purposes need to be used, and the operation cost is greatly increased. Thus, while having independent outputs does not affect the normal use of the four terminal stacked cell assembly, it increases the operational and maintenance costs.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a four terminal perovskite and crystal silicon tandem cell subassembly is provided, it unmatched with bottom crystal silicon subassembly operating current, operating voltage to have solved top perovskite subassembly to need the problem of the dc-to-ac converter of two kinds of adaptations. Meanwhile, laser cutting of the battery assembly in a light absorption effective area is avoided, a mask is used for sputtering a transparent electrode layer on the effective area, so that the battery forms a plurality of sub-battery structures connected in parallel, and the prepared top perovskite battery is more stable.

The utility model discloses a realize like this, provide a four terminal perovskite and crystal silicon tandem cell subassembly, include from last encapsulation glass, upper rubber film, perovskite battery pack cluster, middle glued film, crystal silicon battery pack cluster, lower floor's glued film and the lower encapsulation glass that sets gradually extremely down, the perovskite battery pack cluster has close short-circuit current and open circuit voltage with crystal silicon battery pack cluster, perovskite battery pack cluster and a crystal silicon battery pack cluster sharing dc-to-ac converter, go up encapsulation glass, upper rubber film, perovskite battery pack cluster and middle glued film and be translucent or transparent state respectively.

Further, the string of perovskite battery modules comprises a plurality of perovskite batteries connected in series with each other by a conductive circuit, each of the perovskite batteries comprising positive and negative bus bars and a plurality of perovskite sub-batteries connected in parallel with each other by the positive and negative bus bars.

Furthermore, each perovskite battery sequentially comprises a conductive substrate, a first current carrier transmission layer, perovskite light absorption layers, a second current carrier transmission layer, a buffer layer, transparent electrode layers and passivation layers from bottom to top, positive bus bars and negative bus bars are respectively arranged on two side edges of the perovskite battery and positioned on the surface of the transparent electrode layers, the positive bus bars and the negative bus bars are mutually isolated through the arranged passivation layers, each perovskite battery is provided with a scribing groove which is filled with the same material as the passivation layers, one side of the scribing groove is provided with a common transparent electrode layer, the bottom surface of the common transparent electrode layer is contacted and communicated with the conductive substrate, the top surface of the common transparent electrode layer is contacted and communicated with the bus bars, a plurality of perovskite sub-batteries are arranged on the other side of the scribing groove, and the transparent electrode layers of two adjacent perovskite sub-batteries are separated through spacing grooves, the spacer trench is filled with the same material as the passivation layer.

Further, the thickness of the first carrier transmission layer and the second carrier transmission layer is 10 nm-300 nm.

Furthermore, the thickness of the perovskite light absorption layer is 80 nm-500 nm.

Further, the thickness of the transparent electrode layer is 80 nm-200 nm.

Further, the thickness of the passivation layer is 100 nm-1000 nm.

Compared with the prior art, the utility model discloses a four terminal perovskite and crystalline silicon tandem cell subassembly is through the perovskite light-absorption layer that uses narrow band gap (the band gap is between 1.2eV ~1.5 eV) to and the parallelly connected of monolithic battery inner structure, reduced the voltage of perovskite battery, increased short-circuit current, realized the matching of monolithic perovskite battery and crystalline silicon battery pack's electric current and voltage. And the method that three times of cutting is needed in a common series structure is changed, only one time of laser cutting is needed for edge cleaning, and the laser cutting is not carried out on the light absorption effective area, so that the battery performance attenuation caused by the fact that the laser cutting groove is exposed for long-term outdoor use is avoided. The utility model also provides a four terminal perovskite and crystal silicon tandem cell subassembly's preparation method, the crystal silicon subassembly and the perovskite subassembly that have close open circuit voltage and short circuit photocurrent connect in parallel each other and establish ties can not be like voltage and electric current not causing the loss mutually simultaneously, influence battery pack's life-span. The utility model discloses the perovskite subassembly of preparation has the open circuit voltage and the short-circuit current close with crystal silicon battery pack, can realize arbitrary series-parallel connection, makes four terminal laminated cell's connection method have the variety, and the translucent perovskite battery pack that the preparation obtained is similar with crystal silicon battery pack output, only needs to use the dc-to-ac converter of a sharing, is a four terminal perovskite and crystal silicon laminated cell subassembly that do not have the current loss.

Drawings

Fig. 1 is a schematic diagram illustrating an internal structure of a preferred embodiment of a four-terminal perovskite and crystalline silicon tandem cell assembly according to the present invention;

fig. 2 is a schematic diagram of the internal structure of a component prepared by the first step of the preparation method of the four-terminal perovskite and crystalline silicon tandem cell assembly of the present invention;

fig. 3 is a schematic diagram of the internal structure of the component prepared in step two of the preparation method of the four-terminal perovskite and crystalline silicon tandem cell assembly of the present invention;

fig. 4a is a schematic cross-sectional view of the internal structure of the component prepared in step three of the method for preparing a four-terminal perovskite and crystalline silicon tandem cell assembly according to the present invention, and fig. 4b is a schematic plan view;

fig. 5a is a schematic cross-sectional view of the internal structure of a part prepared by the fourth step of the method for preparing a four-terminal perovskite and crystalline silicon tandem cell assembly according to the present invention, and fig. 5b is a schematic plan view;

fig. 6a is a schematic cross-sectional view of the internal structure of the part prepared in step five of the method for preparing a four-terminal perovskite and crystalline silicon tandem cell assembly according to the present invention, and fig. 6b is a schematic plan view;

fig. 7 is a schematic diagram of the tandem connection of 48 crystal silicon battery component strings and perovskite battery component strings in the four-terminal perovskite and crystal silicon laminated battery component prepared in step five of the preparation method of the four-terminal perovskite and crystal silicon laminated battery component of the present invention;

fig. 8 is a schematic diagram of the tandem connection of 24 crystal silicon battery component strings and perovskite battery component strings in the four-terminal perovskite and crystal silicon tandem cell component prepared in step five of the preparation method of the four-terminal perovskite and crystal silicon tandem cell component of the present invention;

fig. 9 is a schematic view of the internal structure of the perovskite battery prepared in example 1 of the present invention;

fig. 10 is a schematic diagram of the internal structure of the perovskite battery prepared in example 2 of the present invention.

Detailed Description

In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Referring to fig. 1, the preferred embodiment of the four-terminal perovskite and crystalline silicon tandem cell assembly of the present invention includes an upper package glass 1, an upper adhesive film 2, a perovskite cell assembly string 3, a middle adhesive film 4, a crystalline silicon cell assembly string 5, a lower adhesive film 6 and a lower package glass 7, which are sequentially disposed from top to bottom.

Butyl rubber 8 for sealing is arranged at the peripheral side edges of the perovskite battery component string 3 and the crystalline silicon battery component string 5. The perovskite cell assembly string 3 and the crystalline silicon cell assembly string 5 have similar short-circuit current and open-circuit voltage, and the perovskite cell assembly string 3 and the crystalline silicon cell assembly string 5 share one inverter (not shown in the figure). The upper packaging glass 1, the upper adhesive film 2, the perovskite battery component string 3 and the middle adhesive film 4 are in a semitransparent or transparent state respectively.

The perovskite battery assembly string 3 includes a plurality of perovskite batteries 9 connected in series with each other through a conductive circuit, each of the perovskite batteries including positive and negative bus bars 10 and a plurality of perovskite sub-batteries 11 connected in parallel with each other through the positive and negative bus bars 10.

Each of the perovskite cells 9 includes, from bottom to top, a conductive substrate 91, a first carrier transport layer 92, a perovskite light absorption layer 93, a second carrier transport layer 94, a buffer layer 95, a transparent electrode layer 96, and a passivation layer 97 in this order. The positive and negative bus bars 10 are disposed on both sides of the perovskite cell 9 and on the surface of the transparent electrode 96, respectively. The positive and negative bus bars 10 are isolated from each other by a passivation layer 97 provided therebetween. The first carrier transport layer 92 is an electron transport layer or a hole transport layer, and correspondingly, the second carrier transport layer 94 is a hole transport layer or an electron transport layer.

A scribe line groove 12 is provided on each of the perovskite cells 9. The scribe line groove 12 is filled with the same material as the passivation layer 97. A common transparent electrode layer 96' is provided on one side of the scribe line groove 12. The bottom surface of the common transparent electrode layer 96' is in contact with and communicates with the conductive substrate 91, and the top surface thereof is in contact with and communicates with the bus bar 10. A plurality of perovskite sub-cells 11 are arranged in parallel on the other side of the scribe line groove 12. The transparent electrode layers 96 of two adjacent perovskite sub-cells 11 are separated by the provided spacing grooves 13, and each spacing groove 13 is filled with the same material as the passivation layer 97.

The material for preparing the first and second

carrier transport layers

92 and 94 includes any one of imide compounds, quinone compounds, fullerene (C60), and derivatives thereof, or any one of metal oxides including cadmium (Cd), zinc (Zn), indium (In), lead (Pb), molybdenum (Mo), tungsten (W), antimony (Sb), bismuth (Bi), copper (Cu), mercury (Hg), titanium (Ti), silver (Ag), manganese (Mn), iron (Fe), vanadium (V), tin (Sn), zirconium (Zr), strontium (Sr), gallium (Ga), and chromium (Cr), or strontium titanate (SrTiO)₃) And calcium titanate (CaTiO)₃) Or a perovskite oxide of (i) or (ii) or (iii) aluminum oxide (Al)₂O₃) Tin oxide (SnO)₂) Zinc magnesium oxide (MZO), zinc tin oxide (ZnSnO), dioxygenTitanium (TiO)₂) Zinc oxide (ZnO), lithium fluoride (LiF), calcium fluoride (CaF)₂) Magnesium oxide (MgO), niobium pentoxide (Nb)₂O₅) 2,2',7,7' -tetrakis [ N, N-di (4-methoxyphenyl) amino]-9,9' -spirobifluorene (Spiro-MeOTAD), OMeTPA-FA, poly (3, 4-ethylenedioxythiophene) -polystyrenesulfonic acid (PEDOT: PSS), 3-hexyl-substituted polythiophene (P3 HT), poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine](PTAA), 4' -cyclohexylbis [ N, N-bis (4-methylphenyl) aniline](TAPC), N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB), N '-diphenyl-N, N' -di (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine (TPD), cuprous thiocyanate (CuSCN), nickel (Ni) oxide₂O₃) Iron oxide (Fe)₂O₃) EDOT-OMeTPA, CzPAF-SBF, cuprous iodide (CuI), cupric oxide (CuO), cuprous oxide (Cu)₂O), nickel oxide (NiO), molybdenum oxide (MoO)₃) And 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBI), wherein the thickness of the TPBI is 10nm to 300 nm.

The perovskite light absorbing layer 93 is made of a narrow band gap perovskite light absorbing material comprising ABX₃The halide crystal with the structure is characterized in that A is at least one of methylamino, amidino and cesium, B is any one of Sn, Bi, Sb, Ge, Cu or Pb ions, X is at least one of halogen F, Cl, Br and I, and the thickness of the halide crystal is 80-500 nm. The voltage of the perovskite battery prepared by the utility model is less than 1V, and is equivalent to the voltage of the crystalline silicon battery component.

The material for preparing the buffer layer 95 includes any one of fullerene (C60) and its derivatives, metal oxide, BCP, and LiF.

The transparent electrode layer 96 is made of a composite electrode formed by at least one of AZO, ITO, IZO, silver nanowires, copper, silver, graphene and carbon nanotubes, and the thickness of the composite electrode is 80 nm-200 nm.

The passivation layer 97 includes an inorganic passivation layer, an organic passivation layer, and a polymer passivation layer. The material for preparing the inorganic passivation layer comprises SiO₂、SiNx、Al₂O₃And BN, wherein the material for preparing the organic passivation layer comprises any one of arylene diamine derivatives, carbazole derivatives (containing carbazole groups and heterocyclic derivatives bonded with the carbazole groups), phosphorus oxide derivatives and quinolinone derivatives, the material for preparing the polymer passivation layer comprises any one of PEI, PMMA, PS, PU, acrylic resin and epoxy resin, and the thickness of the material is 100 nm-1000 nm.

The utility model also discloses a preparation method of four terminal perovskite and crystal silicon tandem cell subassembly as before, including following step:

step one, preparing a first carrier transport layer 92, a perovskite light absorption layer 93 and a second carrier transport layer 94 on a conductive substrate 91 in sequence. As shown in fig. 2.

And step two, performing edge cleaning treatment on the side edge region 98 of one side edge of the conductive substrate 91 with the prepared second carrier transmission layer 94, removing the first carrier transmission layer 92, the perovskite light absorption layer 93 and the second carrier transmission layer 94 which are prepared on the surface of the side edge region 98, and only keeping the conductive layer part of the conductive substrate 91. The cleaning mode can adopt a laser cutting mode and an etching mode. As shown in fig. 3.

Step three, preparing the buffer layer 95 on the surface of the reserved second carrier transport layer 94 by using a first mask (not shown in the figure), and preparing no buffer layer 95 in the mask region 98' where the first mask is reserved. The masked areas 98' of the first reticle are identical to the side areas 98. As shown in fig. 4a and 4 b.

Step four, preparing the transparent electrode layer 96 on the buffer layer 95 by using a second mask (not shown), wherein a mask region 98 ″ of the second mask includes the positions of the scribing grooves 12 and the spacing grooves 13. The transparent electrode layer 96 on the surface of the buffer layer 95 is divided into a plurality of small areas where the perovskite sub-cells 11 with the same size are located by the arranged spacing grooves 13, and the common transparent electrode layer 96 'is prepared in the side edge areas 98, and the common transparent electrode layer 96' is directly prepared on the conductive substrate 91. The common transparent electrode layer 96' is spaced apart from each of the other transparent electrode layers 96 by the scribe line grooves 12. As shown in fig. 5a and 5 b.

And step five, paving the bus strips 10 on the surfaces of the transparent electrode layer 96 and the common transparent electrode layer 96 ', removing the rest surfaces of the bus strips 10 on the transparent electrode layer 96 and the common transparent electrode layer 96' by using a third mask (not shown in the figure) to prepare a passivation layer 97, and filling the materials of the passivation layer 97 into the scribing grooves 12 and each spacing groove 13 to obtain a single perovskite battery 9. As shown in fig. 6a and 6 b.

And step six, connecting the single perovskite batteries 9 in series through a conductive circuit to obtain the perovskite battery component string 3.

And step seven, sequentially laying lower packaging glass 7, a lower layer adhesive film 6, the prepared crystalline silicon battery pack string 5, an intermediate adhesive film 4, the perovskite battery pack string 3 prepared in the step six, an upper layer adhesive film 2 and upper packaging glass 1, and then putting all the assembled parts into a laminating machine together for laminating to obtain the four-terminal perovskite and crystalline silicon laminated battery pack, wherein the four-terminal perovskite and crystalline silicon laminated battery pack is shown in figure 1. The prepared crystalline silicon battery component string 5 and the perovskite battery component string 3 have the same short-circuit current and matched rated voltage, and are convenient to be connected in series or in parallel.

Fig. 7 shows a string of crystalline silicon cell modules 5 comprising 24 crystalline silicon cells 5' and a string of perovskite cell modules 3 comprising 24 perovskite cells 9 connected in series with each other.

Fig. 8 shows a string of crystalline silicon cell modules 5 comprising 12 crystalline silicon cells 5' and a string of perovskite cell modules 3 comprising 12 perovskite cells 9 connected in series with each other.

In step seven, the lamination parameters of the machine are: the temperature is 100-150 ℃, the pressure is 60-90 kPa, and the laminating time is 5-15 min.

The following will further illustrate the preparation method of the four-terminal perovskite and crystalline silicon tandem cell assembly according to the present invention by specific examples.

Example 1

Referring to fig. 9, fig. 1 to 5a, and fig. 5b, the first embodiment of the method for manufacturing a four-terminal perovskite and crystalline silicon tandem cell assembly of the present invention includes the following steps:

(11) after washing, 16 x 16cm²The FTO surface (i.e., the surface of the conductive substrate 91) of (a) preparing tin dioxide as an electron transport layer (i.e., the first carrier transport layer 92).

(12) Preparation of CsFASnF on tin dioxide layer_0.3I_2.7A perovskite light absorbing layer 93. The prepared 0.9mol/L CsFASnF_0.3I_2.7The DMSO solution was drawn down on tin dioxide and annealed at 100 ℃ for 10 min.

(13) A Spiro-OMeTAD hole transport layer (i.e., second carrier transport layer 94) is prepared on the perovskite light absorbing layer 93. The edges are cleared at the side edge regions 98 using laser cutting, leaving the FTO conductive layer on the glass.

(14) Using the first mask to evaporate a layer of MoO₃A buffer layer 95.

(15) Using a second mask to prepare an ITO transparent electrode layer 96, dividing the semitransparent perovskite battery 9 into 40 perovskite sub-batteries 11 with the same area size, forming a parallel structure, increasing the current of the perovskite battery 9 by 40 times after parallel connection, and keeping the voltage unchanged.

(16) Using a third mask to prepare Al₂O₃ A passivation layer 97.

(17) The positive and negative electrodes of the perovskite battery 9 are led out from the edge by using the bus bars 10, and the semi-transparent perovskite battery 9 with low open-circuit voltage and high short-circuit current is prepared, wherein the voltage is about 0.69V, and the current is about 4A. As shown in fig. 9. Different translucent perovskite cells 9 are connected in series to obtain a translucent perovskite cell assembly string 3.

(18) Laying an EVA film (i.e. lower layer film 6) and butyl rubber 8 on lower packaging glass 7, and using a converging tape 10 to make the size of the lower packaging glass 16 x 16cm²The positive and negative electrodes of the crystalline silicon battery are led out, the voltage of the crystalline silicon battery is about 0.69V, and the current is about 4A. And connecting different crystalline silicon batteries in a series connection mode to obtain the crystalline silicon battery assembly string 5.

(19) Laying an EVA (ethylene vinyl acetate) adhesive film (namely the middle adhesive film 4) on the connected crystalline silicon battery component string 5, and then laying a string of the semitransparent perovskite battery component string 3 prepared in the step (17), wherein the coating surface of the string faces downwards. The top is a string of translucent perovskite battery modules 3 and the bottom is a string of crystalline silicon battery modules 5. The upper and lower 48 cell modules were directly connected in series to obtain a string of upper and lower cell modules with a voltage of about 33V and a current of 4A, as shown in fig. 7. The 24 battery packs were connected in series to obtain an upper and a lower battery pack string having a voltage of about 16.6V and a current of 4A, as shown in fig. 8.

(110) Laying an upper adhesive film 2 and upper packaging glass 1 above the semitransparent perovskite battery component string 3, and then putting the assembled battery component into a laminating machine for laminating, wherein the laminating parameters are as follows: temperature 120 deg.C, pressure 60kPa, lamination time 5 min. And obtaining the four-terminal laminated structure of the perovskite battery assembly and the crystalline silicon battery assembly after lamination. The perovskite battery component string 3 on the upper layer and the crystalline silicon battery component string 5 on the lower layer have similar open-circuit voltage and short-circuit current, have similar output power, do not need to use different inverters, only use one shared inverter, and save production and operation cost.

Example 2

Referring to fig. 10, fig. 1 to fig. 5a and fig. 5b, a second embodiment of the method for manufacturing a four-terminal perovskite and crystalline silicon tandem cell assembly of the present invention includes the following steps:

(21) after washing, 16 x 16cm²ITO surface (i.e., surface of conductive substrate 91) PEDOT: PSS serves as a hole transport layer (i.e., first carrier transport layer 92).

(22) In PEDOT: preparation of MAPbI on PSS₃A perovskite light absorbing layer 93.

(23) A C60 electron transport layer (i.e., second carrier transport layer 94) is prepared on the perovskite light absorbing layer 93. The edge is cleared in the side edge region 98 using laser cutting, removing a portion of the PEDOT: PSS, MAPbI₃And C60, leaving the ITO conductive layer on the glass.

(24) A BCP buffer layer 95 is evaporated using a first mask.

(25) The AZO transparent electrode layer 96 is prepared using the second mask. The semitransparent perovskite battery 9 is divided into 40 perovskite sub-batteries 11 with the same area size to form a parallel connection structure, the current of the perovskite battery 9 is increased by 40 times after parallel connection, and the voltage is unchanged.

(26) A third mask is used to prepare the tris (8-hydroxyquinoline) aluminum passivation layer 97.

(27) The positive and negative electrodes of the perovskite battery 9 are led out from the edge by using the bus bars 10, and the semi-transparent perovskite battery 9 with low open-circuit voltage and high short-circuit current is prepared, wherein the voltage is about 0.69V, and the current is about 4A. As shown in fig. 10. Different translucent perovskite cells 9 are connected in series to obtain a translucent perovskite cell assembly string 3.

(28) Laying an EVA film (i.e. lower layer film 6) and butyl rubber 8 on lower packaging glass 7, and using a converging tape 10 to make the size of the lower packaging glass 16 x 16cm²The positive and negative electrodes of the crystalline silicon battery are led out, the voltage of the crystalline silicon battery is about 0.69V, and the current is about 4A. And connecting different crystalline silicon batteries in a series connection mode to obtain the crystalline silicon battery assembly string 5.

(29) Laying a layer of EVA (ethylene vinyl acetate) adhesive film (namely the middle adhesive film 4) on the connected crystalline silicon battery component, and then laying a string of the semitransparent perovskite battery component strings 3 prepared in the step (27), wherein the film-coated surfaces of the semitransparent perovskite battery component strings face downwards. The top is a string of translucent perovskite battery modules 3 and the bottom is a string of crystalline silicon battery modules 5. The upper and lower 48 cell modules were directly connected in series to obtain a string of upper and lower cell modules with a voltage of about 33V and a current of 4A, as shown in fig. 7. The 24 battery packs were connected in series to obtain an upper and a lower battery pack string having a voltage of about 16.6V and a current of 4A, as shown in fig. 8.

(210) Laying an upper adhesive film 2 and upper packaging glass 1 above the semitransparent perovskite battery component string 3, and then putting the assembled battery component into a laminating machine for laminating, wherein the laminating parameters are as follows: temperature 120 deg.C, pressure 60kPa, lamination time 5 min. And obtaining the four-terminal laminated structure of the perovskite battery assembly and the crystalline silicon battery assembly after lamination. The perovskite battery component string 3 on the upper layer and the crystalline silicon battery component string 5 on the lower layer have similar open-circuit voltage and short-circuit current, have similar output power, do not need to use different inverters, only use one shared inverter, and save production and operation cost.

The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims

1. The utility model provides a four terminal perovskite and crystal silicon tandem cell subassembly, its characterized in that includes from last encapsulation glass, upper rubber film, perovskite battery pack cluster, middle glued film, crystal silicon battery pack cluster, lower floor's glued film and the lower encapsulation glass that sets gradually down, perovskite battery pack cluster and crystal silicon battery pack cluster have close short-circuit current and open circuit voltage, perovskite battery pack cluster and crystal silicon battery pack cluster share an inverter, go up encapsulation glass, upper rubber film, perovskite battery pack cluster and middle glued film and be semitransparent or transparent state respectively.

2. The four-terminal perovskite and crystalline silicon tandem cell assembly of claim 1, wherein the perovskite cell assembly string comprises a plurality of perovskite cells connected in series with one another by a conductive circuit, each perovskite cell comprising positive and negative bus strips and a plurality of perovskite sub-cells connected in parallel with one another by the positive and negative bus strips.

3. The four-terminal perovskite and crystalline silicon laminated cell assembly as claimed in claim 2, wherein each perovskite cell comprises a conductive substrate, a first carrier transmission layer, a perovskite light absorption layer, a second carrier transmission layer, a buffer layer, a transparent electrode layer and a passivation layer from bottom to top in sequence, positive bus strips and negative bus strips are respectively arranged at two sides of the perovskite cell and positioned on the surface of the transparent electrode layer, each perovskite cell is provided with a scribing groove filled with the same material as the passivation layer, one side of the scribing groove is provided with a common transparent electrode layer, the bottom surface of the common transparent electrode layer is in contact with and communicated with the conductive substrate, the top surface of the common transparent electrode layer is in contact with and communicated with the bus strips, a plurality of perovskite sub-cells are arranged at the other side of the scribing groove in parallel, and the transparent electrode layers of two adjacent perovskite sub-cells are separated by an interval groove, the same material as the passivation layer is filled in each of the spaced trenches.

4. The four-terminal perovskite and crystalline silicon tandem cell assembly of claim 3, wherein the first carrier transport layer and the second carrier transport layer have a thickness of 10nm to 300 nm.

5. The four-terminal perovskite and crystalline silicon tandem cell assembly of claim 3, wherein the thickness of the perovskite light absorption layer is 80nm to 500 nm.

6. The four-terminal perovskite and crystalline silicon stacked cell assembly of claim 3, wherein the transparent electrode layer has a thickness of 80nm to 200 nm.

7. The four-terminal perovskite and crystalline silicon tandem cell assembly of claim 3, wherein the thickness of the passivation layer is 100nm to 1000 nm.