CN206460962U - A kind of flexible cadmium telluride thin-film battery - Google Patents
A kind of flexible cadmium telluride thin-film battery Download PDFInfo
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- CN206460962U CN206460962U CN201621459212.7U CN201621459212U CN206460962U CN 206460962 U CN206460962 U CN 206460962U CN 201621459212 U CN201621459212 U CN 201621459212U CN 206460962 U CN206460962 U CN 206460962U
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- cadmium telluride
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of flexible cadmium telluride thin-film battery, the flexible cadmium telluride thin-film battery includes substrate, the substrate is stainless steel layer, extension lamination is provided with the substrate, the extension lamination is followed successively by dorsum electrode layer, back contact, light absorbing layer, Window layer and first electrode FTO layers from lower to upper, the back contact is mixes copper zinc telluridse composite film layer, and the light absorbing layer is Cadimium telluride thin film layer, and the Window layer is indium sulfide thin film layer.Described flexible cadmium telluride thin-film battery has flexibility, the characteristics of Window layer is without cadmium, it is to avoid virose CdS use, and realizes that back is adulterated, and reduces back potential barrier, adds the energy gap of battery, improve the open-circuit voltage of battery.
Description
Technical field
The utility model is related to solar film battery field, and in particular to a kind of flexible cadmium telluride thin-film battery.
Background technology
Cadmium telluride (CdTe) thin film solar cell is a kind of solar cell of high conversion efficiency, and it is one kind with p-type
Thin-film solar cells based on CdTe and n-type Cd hetero-junctions.Many companies and research institution pay close attention to CdTe, part at present
Company realizes double glass type CdTe thin film solar components of volume production, and volume production efficiency is up to 16.3%.But double glass type CdTe thin films
Solar components are due to weight reasons, using limitation is highly susceptible to, additionally due to flexible CdTe thin film solar components should
Paulin, solar electric torch, solar telephone, solar sailor are opened with more extensively, such as can apply to solar energy knapsack, solar energy
Even on solar powered aircraft.One important applied field of flexible solar is BIPV (Building Integrated
Photovoltaic, BIPV), so flexible CdTe is the direction of future studies and development.
Many flexible CdTe thin film solar cells use CdS Window layers at present, and its is seriously polluted, and for CdTe
For hull cell, the energy gap using CdS as Window layer for battery, which is improved, very big restricted, i.e., for raising
The open-circuit voltage of battery has great difficulty.Due to the toxicity problem of cadmium, make for many research institutions of selection of Window layer
It can be less than CdS with the Lattice Matching of ZnS Window layers, but ZnS and CdTe, thus the not good situation of battery performance can be caused.
Existing flexible CdTe thin film solar cell performance boost is difficult, and volume production cost is higher, it is difficult to realize mass production.
Utility model content
In view of this, the application provides a kind of flexible cadmium telluride thin-film battery, by increasing capacitance it is possible to increase the energy gap of battery, improves
The open-circuit voltage of battery, realize back adulterate, reduce back potential barrier, so as to get cadmium telluride diaphragm solar battery have flexibility
The characteristics of change, no cadmium, it is advantageously implemented the mass production of flexible cadmium telluride thin-film battery.
To solve above technical problem, the technical scheme that the utility model is provided is a kind of flexible cadmium telluride thin-film battery,
Including substrate, the substrate is stainless steel layer, is provided with extension lamination on the substrate, and the extension lamination is from lower to upper successively
For dorsum electrode layer, back contact, light absorbing layer, Window layer and first electrode FTO layers, the back contact is answered to mix copper zinc telluridse
Film layer is closed, the light absorbing layer is Cadimium telluride thin film layer, and the Window layer is indium sulfide thin film layer.
It is preferred that, the extension lamination also includes isolation layer, and the isolation layer is located at the substrate and the dorsum electrode layer
Between, the isolation layer is aluminum oxide film layer or silicon oxide film layer.
It is preferred that, the extension lamination also includes resistive formation, and the resistive formation is located at Window layer and described first electrode FTO layers
Between, the resistive formation is SnO 2 thin film layer.
It is preferred that, the dorsum electrode layer is molybdenum film layer.
It is preferred that, the thickness of the light absorbing layer is 2-6 μm.
It is preferred that, the extension lamination also includes encapsulated layer, and the encapsulated layer is ethylene-tetrafluoroethylene copolymer film
Layer.
It is preferred that, the depositional mode of the extension lamination is magnetron sputtering method, and the temperature of deposition is less than 300 DEG C.
In technical scheme, described flexible cadmium telluride thin-film battery is for substrate, not with stainless steel (SS)
One layer of isolation layer is deposited in steel substrate of becoming rusty, the isolation layer can be aluminum oxide film layer or silicon oxide film layer, prevent Fe, Cr
Enter inside battery Deng impurity, influence battery performance；Then one layer of dorsum electrode layer, one layer of back contact, one layer of light are sequentially depositing
Absorbed layer, one layer of Window layer, a floor height resistance layer, FTO layers of electrode before one layer, wherein dorsum electrode layer is molybdenum film layer, and molybdenum has good
Good electric conductivity, and easily realize Ohmic contact with semiconductor；Back contact realizes copper to mix copper zinc telluridse composite film layer
Doping, reduce back potential barrier effect；Light absorbing layer is Cadimium telluride thin film layer；Window layer is the indium sulfide thin film layer without cadmium,
It not only substitutes CdS well, realizes prepared by the CdTe battery without cadmium, while can increase the energy gap of battery, improves electricity
The open-circuit voltage in pond；In addition, being packaged using ethylene-tetrafluoroethylene copolymer film layer (ETFE).Above-mentioned depositing operation
All it is that battery after the completion of the magnetically controlled sputter method using low temperature, deposition realizes that battery is connected by laser and mechanical scratching mode
Structure.
Compared with prior art, the beneficial effect of technical scheme is：Using the indium sulfide thin film layer without cadmium, replace
For CdS, realize prepared by the CdTe battery without cadmium, by increasing capacitance it is possible to increase the energy gap of battery, improve the open-circuit voltage of battery, realize the back of the body
Portion adulterate, reduce back potential barrier, while avoiding virose CdS use, so as to get cadmium telluride diaphragm solar battery tool
The characteristics of flexibleization, no cadmium, it is advantageously implemented the mass production of flexible cadmium telluride thin-film battery.
Brief description of the drawings
Fig. 1 is a kind of structural representation of flexible cadmium telluride thin-film battery described herein.
Embodiment
In order that those skilled in the art more fully understands the technical solution of the utility model, below in conjunction with the accompanying drawings and tool
The utility model is described in further detail for body embodiment.
A kind of flexible cadmium telluride thin-film battery as shown in Figure 1, including substrate 1, the substrate 1 are stainless steel layer, described
Be provided with extension lamination on substrate 1, the extension lamination be followed successively by from lower to upper isolation layer 2, dorsum electrode layer 3, back contact 4,
Light absorbing layer 5, Window layer 6, resistive formation 7, preceding electrode FTO layers 8, wherein, the isolation layer 2 is that aluminum oxide film layer or silicon are aoxidized
Thing film layer, the dorsum electrode layer 3 is molybdenum film layer, and the back contact 4 is mixes copper zinc telluridse composite film layer, and the light is inhaled
It is Cadimium telluride thin film layer to receive layer 5, and its thickness is 2-6 μm, and the Window layer 6 is indium sulfide thin film layer, and the resistive formation 7 is oxidation
Tin thin film layer, the extension lamination also includes encapsulated layer 9, and the encapsulated layer 9 is ethylene-tetrafluoroethylene copolymer film layer.On
The depositional mode for the extension lamination stated is magnetron sputtering method, and the temperature of deposition is less than 300 DEG C.
Flexible cadmium telluride thin-film battery described in the present embodiment is for substrate 1, in the substrate 1 of stainless steel with stainless steel (SS)
One layer of isolation layer 2 of upper deposition, the isolation layer 2 can be aluminum oxide film layer or silicon oxide film layer, prevent the impurity such as Fe, Cr
Into inside battery, battery performance is influenceed；Then one layer of dorsum electrode layer 3, one layer of back contact 4, one layer of light absorbs are sequentially depositing
Layer 5, one layer of Window layer 6, a floor height resistance layer 7, electrode FTO layers 8 before one layer, wherein dorsum electrode layer 3 is molybdenum film layer, and molybdenum has good
Good electric conductivity, and easily realize Ohmic contact with semiconductor；Back contact 4 realizes to mix copper zinc telluridse composite film layer
The doping of copper, reduces the effect of back potential barrier；Light absorbing layer 5 is Cadimium telluride thin film layer；Window layer 6 is the indium sulfide thin film without cadmium
Layer, it not only substitutes CdS well, realizes prepared by the CdTe battery without cadmium, while can increase the energy gap of battery, improves
The open-circuit voltage of battery；In addition, being packaged using ethylene-tetrafluoroethylene copolymer film layer (ETFE).
It the above is only preferred embodiment of the present utility model, it is noted that above-mentioned preferred embodiment should not be regarded
For to limitation of the present utility model, protection domain of the present utility model should be defined by claim limited range.For
For those skilled in the art, do not departing from spirit and scope of the present utility model, can also make some
Improvements and modifications, these improvements and modifications also should be regarded as protection domain of the present utility model.
Claims (7)
1. a kind of flexible cadmium telluride thin-film battery, including substrate, it is characterised in that：The substrate is on glassy layer, the substrate
Be provided with extension lamination, the extension lamination be followed successively by from lower to upper dorsum electrode layer, back contact, light absorbing layer, Window layer with
And first electrode FTO layers, the back contact is mixes copper zinc telluridse composite film layer, and the light absorbing layer is Cadimium telluride thin film layer,
The Window layer is indium sulfide thin film layer.
2. a kind of flexible cadmium telluride thin-film battery according to claim 1, it is characterised in that：The extension lamination also includes
Isolation layer, the isolation layer is located between the substrate and the dorsum electrode layer, and the isolation layer is aluminum oxide film layer or silicon
Oxide film layer.
3. a kind of flexible cadmium telluride thin-film battery according to claim 1, it is characterised in that：The extension lamination also includes
Resistive formation, the resistive formation is located at Window layer and described preceding between electrode FTO layer, and the resistive formation is SnO 2 thin film layer.
4. a kind of flexible cadmium telluride thin-film battery according to claim 1, it is characterised in that：The dorsum electrode layer is that molybdenum is thin
Film layer.
5. a kind of flexible cadmium telluride thin-film battery according to claim 1, it is characterised in that：The thickness of the light absorbing layer
For 2-6 μm.
6. a kind of flexible cadmium telluride thin-film battery according to claim 1, it is characterised in that：The extension lamination also includes
Encapsulated layer, the encapsulated layer is ethylene-tetrafluoroethylene copolymer film layer.
7. a kind of flexible cadmium telluride thin-film battery according to claim 1, it is characterised in that：The deposition of the extension lamination
Mode is magnetron sputtering method, and the temperature of deposition is less than 300 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621459212.7U CN206460962U (en) | 2016-12-28 | 2016-12-28 | A kind of flexible cadmium telluride thin-film battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621459212.7U CN206460962U (en) | 2016-12-28 | 2016-12-28 | A kind of flexible cadmium telluride thin-film battery |
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| Publication Number | Publication Date |
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| CN206460962U true CN206460962U (en) | 2017-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621459212.7U Active CN206460962U (en) | 2016-12-28 | 2016-12-28 | A kind of flexible cadmium telluride thin-film battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172643A (en) * | 2017-11-29 | 2018-06-15 | 成都中建材光电材料有限公司 | A kind of CdTe lamination solar cells and preparation method thereof |
-
2016
- 2016-12-28 CN CN201621459212.7U patent/CN206460962U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172643A (en) * | 2017-11-29 | 2018-06-15 | 成都中建材光电材料有限公司 | A kind of CdTe lamination solar cells and preparation method thereof |
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