CN209056508U - A kind of flexible CIGS thin film solar battery - Google Patents
A kind of flexible CIGS thin film solar battery Download PDFInfo
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- CN209056508U CN209056508U CN201822217835.9U CN201822217835U CN209056508U CN 209056508 U CN209056508 U CN 209056508U CN 201822217835 U CN201822217835 U CN 201822217835U CN 209056508 U CN209056508 U CN 209056508U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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Abstract
The utility model discloses a kind of flexible CIGS thin film solar battery, including flexible substrates, and flexible substrates top surface is sequentially laminated with back electrode, CIGS thin film, buffer layer, resistive formation, Window layer and anti-reflection layer from the bottom to top;Back electrode includes the alloy film layer stacked gradually from the bottom to top, ZnAl film layer, drop resistance metallic diaphragm, anticorrosion film and Mo film layer;Alloy film layer is CuAl, CuZn, TiAl or TiCu film;Drop resistance metallic diaphragm is Ti, Al, Ag or Cu film layer;Anticorrosion film is MoN, MoO, Al2O3, TiN or TiON film layer;Buffer layer is ZnS or InS film;Resistive formation is intrinsic ZnO film;Window layer is GZO or IGZO film;Anti-reflection layer is MgF2Or ZnS film;The battery does not need that barrier layer, back electrode is relatively thin and has many advantages, such as preferable vacuum technology compatibility, indeformable, anticorrosive, the good chemical stability of later period high temperature selenizing.
Description
Technical field
The utility model relates to technical field of thin-film solar, specifically a kind of flexible CIGS thin film sun
It can battery.
Background technique
Copper indium gallium selenide (CIGS) thin-film solar cells just rapidly develops at present, but most is substrate of glass, flexible CIGS
Thin-film solar cells just starts, foldable due to its light weight, flexible, easy to carry, therefore can use circulating type
Sputtering sedimentation is advantageously implemented large-scale production, and significantly reduces cost, can be widely used in portable emergency charging back
Packet, photovoltaic tent, photovoltaic curtain, photovoltaic roof, solar telephone etc. have wide application space, improve flexible CIGS film
Solar battery efficiency and service life are conducive to the sustainable and healthy development of China's photovoltaic industry.
Utility model content
The purpose of this utility model is to provide a kind of flexible CIGS thin film solar battery, which is not needed
Barrier layer, back electrode is relatively thin and has preferable vacuum technology compatibility, later period high temperature selenizing indeformable, anticorrosive, good
The advantages that chemical stability, in addition multi-layer film structure and substrate adhesive strength are high, have good Ohmic contact with CIGS.
The technical scheme adopted by the utility model to solve the technical problem is as follows:
A kind of flexible CIGS thin film solar battery, including flexible substrates, flexible substrates top surface from the bottom to top according to
It is secondary to be laminated with back electrode, CIGS thin film, buffer layer, resistive formation, Window layer and anti-reflection layer;
The back electrode includes the alloy film layer stacked gradually from the bottom to top, ZnAl film layer, drop resistance metallic diaphragm, anticorrosion
Film layer and Mo film layer;The alloy film layer is CuAl, CuZn, TiAl or TiCu film;Drop resistance metallic diaphragm be Ti, Al,
Ag or Cu film layer;The anticorrosion film is MoN, MoO, Al2O3, TiN or TiON film layer;
The buffer layer is ZnS or InS film;
The resistive formation is intrinsic ZnO film;
The Window layer is GZO or IGZO film;
The anti-reflection layer is MgF2Or ZnS film;
In the back electrode alloy film layer with a thickness of 60~120nm, ZnAl film layer with a thickness of 40~80nm, drop resistance gold
Belong to film layer with a thickness of 20~40nm, anticorrosion film with a thickness of 15~60nm, Mo film layer with a thickness of 55~75nm;
The CIGS thin film with a thickness of 1300~2200nm;
The buffer layer with a thickness of 40~120nm;
The resistive formation with a thickness of 40~120nm;
The Window layer with a thickness of 600~900nm;
The anti-reflection layer with a thickness of 30~110nm.
Further, the flexible substrates use polymeric substrates or metal flexible substrate.
The beneficial effects of the utility model are:
One, using polymeric substrates or metal flexible substrate as flexible substrates, light weight is foldable, flexible, is convenient for
It carries, therefore circulating type sputtering sedimentation can be used, be advantageously implemented large-scale production, and significantly reduce cost.
Two, back electrode uses multi-layer film structure, and the addition of alloy film layer and drop resistance film layer can effectively improve back electrode
Electric conductivity, ZnAl film layer are well bonded alloy film layer to drop resistance film layer, reduce and answer in the film of whole back electrode
Power, drop resistance film layer can relative reduction ZnAl film layer to the resistivity of anticorrosion film, anticorrosion film can prevent later period selenizing
Corrosion of the selenium to alloy film layer in the process, Mo film layer make selenium react appropriate and controllable with Mo, and with the CIGS as absorbed layer
Film forms good Ohmic contact, beneficial to CIGS thin film solar battery efficiency raising, back electrode reduce barrier layer and
The number of plies of Mo, and the thickness of Mo is reduced, back electrode integral thickness reduces, and cost reduces.
Three, buffer layer is ZnS or InS film, and unconventional CdS, had not only reduced cost simultaneously but also had reduced environmental pollution.
Four, Window layer is GZO or IGZO film, and the film thickness sputtered needed for relatively traditional AZO film is lower and has
There are better electric conductivity and transmitance.
Five, anti-reflection layer allows absorbed layer to be collected into more sunlights, improves the efficiency of light absorption of battery.
Detailed description of the invention
The present invention will be further described with reference to the accompanying drawings and examples:
Fig. 1 is the structural schematic diagram of the utility model.
Specific embodiment
As shown in Figure 1, the utility model provides a kind of flexible CIGS thin film solar battery, including flexible substrates
1, flexible substrates 1 use polymeric substrates or metal flexible substrate, and polymeric substrates can be polyimides, polybenzimidazoles
Deng metal flexible substrate can be iron-nickel alloy, titanium foil, molybdenum foil, aluminium foil, copper foil etc.;
1 top surface of flexible substrates is sequentially laminated with back electrode 2, CIGS thin film 3, buffer layer 4, resistive formation 5, window from the bottom to top
Layer 6 and anti-reflection layer 7;
The back electrode 2 includes the alloy film layer 21 stacked gradually from the bottom to top, ZnAl film layer 22, drop resistance metallic diaphragm
23, anticorrosion film 24 and Mo film layer 25;The alloy film layer 21 is CuAl, CuZn, TiAl or TiCu film;The drop resistance gold
Category film layer 23 is Ti, Al, Ag or Cu film layer;The anticorrosion film 24 is MoN, MoO, Al2O3, TiN or TiON film layer;
The buffer layer 4 is ZnS or InS film;
The resistive formation 5 is intrinsic ZnO film;
The Window layer 6 is GZO or IGZO film;
The anti-reflection layer 7 is MgF2Or ZnS film;
In the back electrode 2 alloy film layer 21 with a thickness of 60~120nm, ZnAl film layer 22 with a thickness of 40~80nm,
Drop resistance metallic diaphragm 23 with a thickness of 20~40nm, anticorrosion film 24 with a thickness of 15~60nm, Mo film layer 25 with a thickness of
55~75nm;
The CIGS thin film 3 with a thickness of 1300~2200nm;
The buffer layer 4 with a thickness of 40~120nm;
The resistive formation 5 with a thickness of 40~120nm;
The Window layer 6 with a thickness of 600~900nm;
The anti-reflection layer 7 with a thickness of 30~110nm.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility model
Limitation;Anyone skilled in the art, it is all available in the case where not departing from technical solutions of the utility model ambit
The methods and technical content of the disclosure above makes many possible changes and modifications to technical solutions of the utility model, or is revised as
The equivalent embodiment of equivalent variations.Therefore, all contents without departing from technical solutions of the utility model, according to the utility model
Technical spirit any simple modification, equivalent replacement, equivalence changes and modification made to the above embodiment are still fallen within practical
In the range of the protection of new technique scheme.
Claims (2)
1. a kind of flexible CIGS thin film solar battery, which is characterized in that including flexible substrates, flexible substrates top surface by
Under supreme be sequentially laminated with back electrode, CIGS thin film, buffer layer, resistive formation, Window layer and anti-reflection layer;
The back electrode includes the alloy film layer stacked gradually from the bottom to top, ZnAl film layer, drop resistance metallic diaphragm, anticorrosion film
With Mo film layer;The alloy film layer is CuAl, CuZn, TiAl or TiCu film;Drop resistance metallic diaphragm be Ti, Al, Ag or
Cu film layer;The anticorrosion film is MoN, MoO, Al2O3, TiN or TiON film layer;
The buffer layer is ZnS or InS film;
The resistive formation is intrinsic ZnO film;
The Window layer is GZO or IGZO film;
The anti-reflection layer is MgF2Or ZnS film;
In the back electrode alloy film layer with a thickness of 60~120nm, ZnAl film layer with a thickness of 40~80nm, drop resistance metal film
Layer with a thickness of 20~40nm, anticorrosion film with a thickness of 15~60nm, Mo film layer with a thickness of 55~75nm;
The CIGS thin film with a thickness of 1300~2200nm;
The buffer layer with a thickness of 40~120nm;
The resistive formation with a thickness of 40~120nm;
The Window layer with a thickness of 600~900nm;
The anti-reflection layer with a thickness of 30~110nm.
2. a kind of flexible CIGS thin film solar battery according to claim 1, which is characterized in that the flexibility
Substrate uses polymeric substrates or metal flexible substrate.
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CN201822217835.9U CN209056508U (en) | 2018-12-27 | 2018-12-27 | A kind of flexible CIGS thin film solar battery |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109449228A (en) * | 2018-12-27 | 2019-03-08 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin film solar battery |
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2018
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109449228A (en) * | 2018-12-27 | 2019-03-08 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin film solar battery |
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