CN202871803U - Copper indium gallium selenide thin-film solar cell - Google Patents
Copper indium gallium selenide thin-film solar cell Download PDFInfo
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- CN202871803U CN202871803U CN 201220483151 CN201220483151U CN202871803U CN 202871803 U CN202871803 U CN 202871803U CN 201220483151 CN201220483151 CN 201220483151 CN 201220483151 U CN201220483151 U CN 201220483151U CN 202871803 U CN202871803 U CN 202871803U
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- solar cell
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- silicate glass
- molybdenum electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a copper indium gallium selenide (CIGS) thin-film solar cell. The CIGS thin-film solar cell, from bottom to top, sequentially comprises a molybdenum electrode layer, a CIGS absorption layer, a zinc sulfide buffer layer, an intrinsic zinc oxide layer and an aluminum-doped zinc oxide layer, wherein a high-alkali alumino-silicate glass substrate is disposed below the molybdenum electrode layer; a magnesium fluoride antireflective film and a zinc sulfide antireflective film are disposed above the aluminum-doped zinc oxide layer; and an upper surface of the high-alkali alumino-silicate glass substrate and each layers thereabove are provided with suede structures. The arrangement of the double layers of antireflective films can better held sunlight penetrates through a window layer of the cell and goes into the absorption layer. The suede structures are in favor of entering of Na+ into the CIGS absorption layer through apertures or slits in the molybdenum electrode layer, has a relatively good light trapping effect, helps to increase absorption of lights and to improve photoelectric conversion efficiency. The high-alkali alumino-silicate glass substrate has a significant high-intensity characteristic, and guarantees that the cell has excellent anti-damage performance and shock resistance in a wild long-term power generation environment.
Description
Technical field
The utility model relates to field of thin film solar cells, particularly a kind of copper-indium-galliun-selenium film solar cell take silicate glass as substrate.
Background technology
Copper-indium-galliun-selenium film solar cell is the most rising a kind of thin-film solar cells owing to its efficient height, good stability, low cost and other advantages receive people's concern.The base plate glass of this battery is chosen conventional soda-lime-silica glass usually, be that the content of alkali metal oxide is higher in the glass, mass percent is about 15%, this mainly is because the alkali metal ion in the glass, Na+ particularly, can pass the molybdenum electrode layer of battery and enter CuInGaSe absorbed layer, and significantly promote thus the opto-electronic conversion performance of battery.Yet the soda-lime-silica glass of this routine is because the content of alkali metal oxide is higher, and aluminium content is less, thereby cause the intensity of glass not high, the shock resistance of glass and damage-resistant can be just bad, this is for the long-term Copper Indium Gallium Selenide assembly of generating in the open air, may be subject to the impact of certain external force, and cause base plate glass appearance damage, cut to a certain degree, thereby affect the generating effect of battery.Conventional copper-indium-galliun-selenium film solar cell substrate all adopts smooth soda-lime-silica glass substrate simultaneously, the film of preparation does not have suede structure thereon, be unfavorable for forming good sunken light effect and increase light at the travel track of inside battery, increase is to the absorption of light, thereby affects its photoelectric conversion efficiency.
The utility model content
The purpose of this utility model provides the copper-indium-galliun-selenium film solar cell that a kind of photoelectric conversion efficiency is high, damage-resistant can be strong.
For achieving the above object, the utility model is by the following technical solutions: a kind of copper-indium-galliun-selenium film solar cell, include successively molybdenum electrode layer, CuInGaSe absorbed layer, zinc sulphide resilient coating, native oxide zinc layer and Al-Doped ZnO layer from bottom to top, it is characterized in that, described molybdenum electrode layer below is provided with high-alkali alumina silicate glass substrate, and described Al-Doped ZnO layer top also is provided with the magnesium fluoride antireflective coating.
The further technical scheme of the utility model also has following characteristics:
Described magnesium fluoride film top also is provided with the zinc sulphide antireflective coating.
Described high-alkali alumina silicate glass upper surface of base plate and each layer of top thereof all have suede structure.
Described each layer thickness is respectively: high-alkali alumina silicate glass substrate 2～5mm; Molybdenum electrode layer 1～1.5mm; CuInGaSe absorbed layer 1.5～3mm; Zinc sulphide resilient coating 50～80nm; Native oxide zinc layer 50～80nm; Al-Doped ZnO layer 380～400nm; Magnesium fluoride antireflective coating 80～100nm; Zinc sulphide antireflective coating 40～60nm.
The beneficial effects of the utility model:
(1) adopts magnesium fluoride/zinc sulphide double layer antireflection coating, can make better sunray see through the battery Window layer and enter absorbed layer inside, increase the absorption of light, improve the photoelectric conversion efficiency of battery.
(2) with the silicate glass of high alkali content and the high aluminium content substrate as copper-indium-galliun-selenium film solar cell, compare with conventional soda-lime-silica glass, have obvious high strength characteristics, guarantee that battery generates electricity for a long time and possesses excellent anti-damage, shock resistance in the environment in the open air; Substrate surface is with suede structure, so that follow-up preparation on substrate all layer/films such as molybdenum electrode layer, CuInGaSe absorbed layer all have suede structure, be conducive to Na+ in the glass and pass aperture in the molybdenum electrode layer or narrow and enter CuInGaSe absorbed layer inside, and the matte rete has better sunken light effect to light, increase is conducive to improve photoelectric conversion efficiency to reflection and the absorption of incident ray at inside battery.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
As shown in Figure 1, copper indium gallium selenide film battery provided by the utility model, above surface with the high-alkali alumina silicate glass of suede structure as substrate 1, plated film successively on the upper surface of substrate 1, formation possesses molybdenum electrode layer 2, CuInGaSe absorbed layer 3, zinc sulphide resilient coating 4, native oxide zinc layer 5, Al-Doped ZnO layer 6, magnesium fluoride antireflective coating 7 and the zinc sulphide antireflective coating 8 of suede structure, wherein, high-alkali alumina silicate glass substrate 2～5mm; Molybdenum electrode layer 1～1.5mm; CuInGaSe absorbed layer 1.5～3mm; Zinc sulphide resilient coating 50～80nm; Native oxide zinc layer 50～80nm; Al-Doped ZnO layer 380～400nm; Magnesium fluoride antireflective coating 80～100nm; Zinc sulphide antireflective coating 40～60nm.Double layer antireflection coating is set, can makes better sunray see through the battery Window layer and enter absorbed layer inside, increase the absorption of light; Suede structure is conducive to Na+ in the glass and passes aperture in the molybdenum electrode layer or narrow and enter CuInGaSe absorbed layer inside, the matte rete has better sunken light effect to light simultaneously, increase is conducive to improve photoelectric conversion efficiency to reflection and the absorption of incident ray at inside battery.Adopt high-alkali alumina silicate glass as the substrate of battery device, have obvious high strength characteristics, guarantee that battery generates electricity for a long time and possesses excellent anti-damage, shock resistance in the environment in the open air.
Above-described embodiment is as preferred embodiments of the present utility model; describe technical conceive of the present utility model and essential implementation in detail; be not to be that protection range of the present utility model is limited; all any simple modification and equivalent structure transformation or modifications of doing according to the utility model Spirit Essence all should be encompassed within the protection range of the present utility model.
Claims (4)
1. copper-indium-galliun-selenium film solar cell, include successively molybdenum electrode layer, CuInGaSe absorbed layer, zinc sulphide resilient coating, native oxide zinc layer and Al-Doped ZnO layer from bottom to top, it is characterized in that, described molybdenum electrode layer below is provided with high-alkali alumina silicate glass substrate, and described Al-Doped ZnO layer top also is provided with the magnesium fluoride antireflective coating.
2. a kind of copper-indium-galliun-selenium film solar cell according to claim 1 is characterized in that, described magnesium fluoride film top also is provided with the zinc sulphide antireflective coating.
3. a kind of copper-indium-galliun-selenium film solar cell according to claim 1 and 2 is characterized in that, described high-alkali alumina silicate glass upper surface of base plate and each layer of top thereof all have suede structure.
4. a kind of copper-indium-galliun-selenium film solar cell according to claim 3 is characterized in that, described each layer thickness is respectively: high-alkali alumina silicate glass substrate 2～5mm; Molybdenum electrode layer 1～1.5mm; CuInGaSe absorbed layer 1.5～3mm; Zinc sulphide resilient coating 50～80nm; Native oxide zinc layer 50～80nm; Al-Doped ZnO layer 380～400nm; Magnesium fluoride antireflective coating 80～100nm; Zinc sulphide antireflective coating 40～60nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220483151 CN202871803U (en) | 2012-09-21 | 2012-09-21 | Copper indium gallium selenide thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220483151 CN202871803U (en) | 2012-09-21 | 2012-09-21 | Copper indium gallium selenide thin-film solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN202871803U true CN202871803U (en) | 2013-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220483151 Expired - Fee Related CN202871803U (en) | 2012-09-21 | 2012-09-21 | Copper indium gallium selenide thin-film solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140309A (en) * | 2014-06-04 | 2015-12-09 | 北京汉能创昱科技有限公司 | Thin-film solar cell and preparation method thereof |
| CN106449807A (en) * | 2016-11-11 | 2017-02-22 | 辽宁工业大学 | Photovoltaic cell and preparation method thereof |
| CN108649105A (en) * | 2018-07-02 | 2018-10-12 | 北京铂阳顶荣光伏科技有限公司 | A kind of method for manufacturing solar battery |
-
2012
- 2012-09-21 CN CN 201220483151 patent/CN202871803U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140309A (en) * | 2014-06-04 | 2015-12-09 | 北京汉能创昱科技有限公司 | Thin-film solar cell and preparation method thereof |
| CN105140309B (en) * | 2014-06-04 | 2017-10-03 | 北京创昱科技有限公司 | A kind of thin-film solar cells and preparation method thereof |
| CN106449807A (en) * | 2016-11-11 | 2017-02-22 | 辽宁工业大学 | Photovoltaic cell and preparation method thereof |
| CN106449807B (en) * | 2016-11-11 | 2018-08-28 | 辽宁工业大学 | A kind of photovoltaic cell and preparation method thereof |
| CN108649105A (en) * | 2018-07-02 | 2018-10-12 | 北京铂阳顶荣光伏科技有限公司 | A kind of method for manufacturing solar battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130410 Termination date: 20150921 |
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| EXPY | Termination of patent right or utility model |