CN209526097U - Generating electricity on two sides CIGS thin-film solar component - Google Patents
Generating electricity on two sides CIGS thin-film solar component Download PDFInfo
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- CN209526097U CN209526097U CN201920181168.5U CN201920181168U CN209526097U CN 209526097 U CN209526097 U CN 209526097U CN 201920181168 U CN201920181168 U CN 201920181168U CN 209526097 U CN209526097 U CN 209526097U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a kind of generating electricity on two sides CIGS thin-film solar components, include a substrate glass, the two sides of the substrate glass are successively arranged a metal electrode layer, an absorbed layer, a buffer layer, a Window layer and a cover-plate glass, the metal electrode layer is Mo electrode layer, the absorbed layer is CuInGaSe absorbed layer, the buffer layer is CdS or ZnS, and the Window layer is doping ZnO, and the cover-plate glass is tempering ultra-clear glasses.The generating electricity on two sides CIGS thin-film solar component is sequentially depositing metal electrode layer, absorbed layer, buffer layer and Window layer on positive and negative two surfaces of substrate glass, in symmetrical two battery packs of tow sides preparation structure, two-sided ultrawhite tempered glass of enclosing again is packaged, " sandwich " modular construction of symmetrical configuration is formed, it is two-sided to generate electricity.
Description
Technical field
The utility model relates to a kind of solar energy films, more precisely, be a kind of generating electricity on two sides CIGS thin-film too
Positive energy component.
Background technique
Copper-indium-galliun-selenium film solar cell refers to absorbed layer by four kinds of copper (Cu), indium (In), gallium (Ga), selenium (Se) elements
The thin-film solar cells constituted according to a certain percentage.This thin-film solar cells is usually hierarchical structure, and substrate is usually
The materials such as glass or stainless steel deposit CuInGaSe absorbed layer, cadmium sulfide buffer layer, zinc oxide Window layer respectively on substrate
Equal plural layers, are topmost one layer of cover-plate glass.Copper-indium-galliun-selenium film solar cell low, life cycle with power attenuation
Long, the advantages that dim light power generation performance is good and appearance consistency is good.Due to requiring low, the CIGS thin-film sun to lighting angle
Energy battery is more suitable for being installed on anti-poverty projects and the garden landscapes, trip such as building facade, the complementation of agriculture light, fishing light complementation
The fields such as trip, communications and transportation.
CIGS thin-film solar component majority is single side power generation at present, and only has tempering cover-plate glass in single side.This
For the photovoltaic module of kind of structure vertically-mounted or be applied to the fishing light mutual added time, the other of component does not absorb light on one side, limits copper
The generating efficiency of indium gallium selenium thin film solar component.On the other hand, single side tempered glass component meets not on safety of structure
Photovoltaic Building Integration demand, it is necessary to which the material of additional enhancing structure intensity just can apply to Photovoltaic Building Integration.
Patent CN103850372A proposes a kind of copper indium gallium selenium solar curtain wall component.Photovoltaic module two sides are equipped with ultrawhite steel
Change glass support plate, photovoltaic module structure is kept to stablize.The patented product is that have the CIGS thin-film of more high structural strength too
Positive energy component, but can only single side power generation.
Utility model content
The utility model mainly solves technical problem present in the prior art, to provide a kind of generating electricity on two sides copper and indium
Gallium selenium thin film solar component.
Above technical problems of the utility model are mainly solved by the following technical scheme:
A kind of generating electricity on two sides CIGS thin-film solar component, which is characterized in that the generating electricity on two sides copper indium gallium selenide
Thin film solar component includes a substrate glass, and the two sides of the substrate glass are successively arranged a metal electrode layer, an absorption
Layer, a buffer layer, a Window layer and a cover-plate glass, the metal electrode layer are Mo electrode layer, and the absorbed layer is copper
Indium gallium selenium absorbed layer, the buffer layer are CdS or ZnS, and the Window layer is doping ZnO, and the cover-plate glass is steel
Change ultra-clear glasses.
As the utility model preferred embodiment, the metal electrode layer with a thickness of 300~500nm, it is described
Absorbed layer with a thickness of 1000~1500nm, the buffer layer with a thickness of 30~50nm, the Window layer with a thickness of
1500~2000nm.
The generating electricity on two sides CIGS thin-film solar component of the utility model has the advantage that the generating electricity on two sides copper and indium
Gallium selenium thin film solar component positive and negative two surfaces of substrate glass be sequentially depositing metal electrode layer, absorbed layer, buffer layer and
Window layer, in symmetrical two battery packs of tow sides preparation structure, two-sided ultrawhite tempered glass of enclosing again is packaged, and is formed
" sandwich " modular construction of symmetrical configuration, it is two-sided to generate electricity.It is applying at ground or roof power station, with certain inclination angle
Ground or roof reflector light, scattering light etc. can be absorbed in degree installation, the back side, and generating efficiency is higher than common copper indium gallium selenide film assembly
15%~30%；It is vertically-mounted applied to architecture-integral, such as photovoltaic gobo, two-sided to generate electricity, generating efficiency can
To improve 50%~100%.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of the generating electricity on two sides CIGS thin-film solar component of the utility model.
Specific embodiment
The preferred embodiment of the utility model is described in detail with reference to the accompanying drawing, so that the advantages of the utility model
It can be easier to be readily appreciated by one skilled in the art with feature, to make the protection scope of the utility model apparent clear
Define.
As shown in Figure 1, the generating electricity on two sides CIGS thin-film solar component includes a substrate glass 1, the substrate glass 1
Two sides be successively arranged a metal electrode layer 2, an absorbed layer 3, a buffer layer 4, a Window layer 5 and a cover-plate glass 6, the metal
Electrode layer 2 is Mo electrode layer, which is CuInGaSe absorbed layer, which is CdS or ZnS, which is to mix
Miscellaneous ZnO, the cover-plate glass 6 are tempering ultra-clear glasses.
The metal electrode layer 2 with a thickness of 300~500nm, the absorbed layer 3 with a thickness of 1000~1500nm, the buffering
Layer 4 with a thickness of 30~50nm, the Window layer 5 with a thickness of 1500~2000nm.
The generating electricity on two sides CIGS thin-film solar component is sequentially depositing metal on positive and negative two surfaces of substrate glass 1
Electrode layer 2, absorbed layer 3, buffer layer 4 and Window layer 5, it is two-sided attached again in symmetrical two battery packs of tow sides preparation structure
Upper ultrawhite tempered glass is packaged, and forms " sandwich " modular construction of symmetrical configuration, two-sided to generate electricity.It is applying on ground
When face or roof power station, with the installation of certain tilt angle, ground or roof reflector light, scattering light etc., power generation is can be absorbed in the back side
Efficiency is higher by 15%~30% than common copper indium gallium selenide film assembly；It is vertically-mounted applied to architecture-integral, such as photovoltaic gobo
Deng two-sided to generate electricity, generating efficiency can be improved 50%~100%.
Two-sided due to the generating electricity on two sides CIGS thin-film solar component has tempered glass as cover sheet, knot
Structure is symmetrical, and thickness of glass is adjustable, to meet under varying environment the needs of to modular construction intensity and installation requirements.
The generating electricity on two sides CIGS thin-film solar modular construction is simple, and effect is obvious, low in cost, practical.
Not limited to this, any change or replacement expected without creative work should all be covered in the utility model
Protection scope within.Therefore, the protection scope of the utility model should be determined by the scope of protection defined in the claims.
Claims (2)
1. a kind of generating electricity on two sides CIGS thin-film solar component, which is characterized in that the generating electricity on two sides copper indium gallium selenide is thin
Film solar component include a substrate glass (1), the two sides of the substrate glass (1) be successively arranged a metal electrode layer (2),
One absorbed layer (3), a buffer layer (4), a Window layer (5) and a cover-plate glass (6), the metal electrode layer (2) are Mo electricity
Pole layer, the absorbed layer (3) are CuInGaSe absorbed layer, and the buffer layer (4) is CdS or ZnS, the Window layer
It (5) is doping ZnO, the cover-plate glass (6) is tempering ultra-clear glasses.
2. generating electricity on two sides CIGS thin-film solar component according to claim 1, which is characterized in that the metal
Electrode layer (2) with a thickness of 300~500nm, the absorbed layer (3) with a thickness of 1000~1500nm, the buffer layer
(4) with a thickness of 30~50nm, the Window layer (5) with a thickness of 1500~2000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920181168.5U CN209526097U (en) | 2019-02-01 | 2019-02-01 | Generating electricity on two sides CIGS thin-film solar component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920181168.5U CN209526097U (en) | 2019-02-01 | 2019-02-01 | Generating electricity on two sides CIGS thin-film solar component |
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| Publication Number | Publication Date |
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| CN209526097U true CN209526097U (en) | 2019-10-22 |
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| CN201920181168.5U Active CN209526097U (en) | 2019-02-01 | 2019-02-01 | Generating electricity on two sides CIGS thin-film solar component |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171640A (en) * | 2021-11-25 | 2022-03-11 | 泰州锦能新能源有限公司 | Preparation method of copper indium gallium selenide solar cell |
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2019
- 2019-02-01 CN CN201920181168.5U patent/CN209526097U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171640A (en) * | 2021-11-25 | 2022-03-11 | 泰州锦能新能源有限公司 | Preparation method of copper indium gallium selenide solar cell |
| CN114171640B (en) * | 2021-11-25 | 2024-03-01 | 泰州锦能新能源有限公司 | Preparation method of copper indium gallium selenium solar cell |
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