CN205960004U

CN205960004U - High -efficient heterojunction solar cell

Info

Publication number: CN205960004U
Application number: CN201620793405.XU
Authority: CN
Inventors: 尤宇文; 宋广华; 罗骞; 黄辉明
Original assignee: Goldstone Fujian Energy Co Ltd
Current assignee: Goldstone Fujian Energy Co Ltd
Priority date: 2016-07-26
Filing date: 2016-07-26
Publication date: 2017-02-15
Anticipated expiration: 2026-07-26

Abstract

The utility model discloses a high -efficient heterojunction solar cell, including n type silicon substrate, the deposit is on first deposit intrinsic amorphous silicon layer, n type amorphous silicon layer and a transparent conducting oxide layer of n type silicon substrate sensitive surface in proper order, and the deposit is on second deposit intrinsic amorphous silicon layer, p type amorphous silicon layer and the 2nd transparent conducting oxide layer of the n type silicon substrate face of being shaded from the sun in proper order, be equipped with the conducting layer on the 2nd transparent conducting oxide layer of the n type silicon substrate face of being shaded from the sun, be equipped with the protective layer on the conducting layer, the 2nd transparent conducting oxide layer, conducting layer, protective layer coincide form the face that is shaded from the sun pellicular cascade, the protective layer is transparent conducting oxide layer or silver layer. The utility model discloses the face film laminated structure that is shaded effectively improves the battery ability that the face electrode collected the transmission electric current of being shaded, promotes battery conversion efficiency, reduces the low temperature silver thick liquid consumption of the face that is shaded electrode, reduction in production cost, the protective layer can prevent the oxidation. And can resist the corruption of alkali.

Description

A kind of efficient heterojunction solar battery

Technical field

This utility model is related to technical field of solar batteries, more particularly, to a kind of efficient heterojunction solar battery.

Background technology

Heterojunction solar battery is the solaode growing thin amorphous silicon layer on silicon substrate, has that structure is simple, work Skill temperature is low, high conversion efficiency, and the feature of good temp characteristic is suitable for one of high-efficiency battery of large-scale promotion application, tool There is good development prospect.

The primary structure of heterojunction solar battery in the market is：N-type silicon substrate sensitive surface successively deposits Thin film intrinsic amorphous silicon layer and P-type non-crystalline silicon emitter layer, form the PN heterojunction with thin film intrinsic amorphous silicon interlayer；Two Deposit including transparent conducting oxide layer with sputtering method on the thin amorphous silicon layer of face doping, finally make on including transparent conducting oxide layer Solaode gate line electrode, using silk screen printing low temperature silver paste on including transparent conducting oxide layer, is formed too after baking Sun energy battery electrode, but in order to obtain higher conversion efficiency, back of solar cell need to print very intensive grid line, causes low Warm silver paste consumption is larger, and monolithic battery is relatively costly, is unfavorable for commercial production.

Utility model content

For the problems referred to above, this utility model provides a kind of efficient heterojunction solar battery, solves solar cell The intensive grid line of back up, causes low temperature silver paste consumption big, the problem of battery high cost.

For solving above-mentioned technical problem, this utility model be employed technical scheme comprise that：A kind of efficient heterojunction solar Battery, including n-type silicon substrate, is sequentially deposited at the first deposition intrinsic amorphous silicon layer, the N-shaped non-crystalline silicon of n-type silicon substrate sensitive surface Layer and the first including transparent conducting oxide layer, are sequentially deposited at the second deposition intrinsic amorphous silicon layer, the p-type of n-type silicon substrate shady face Amorphous silicon layer and the second including transparent conducting oxide layer, the second including transparent conducting oxide layer of described n-type silicon substrate shady face sets There is conductive layer, described conductive layer is provided with protective layer, described second including transparent conducting oxide layer, conductive layer, protective layer congruent form Become shady face pellicular cascade, described protective layer is including transparent conducting oxide layer or silver layer.

Further, described conductive layer be copper metal layer, ambrose alloy metal level, nickel metal layer, silver metal layer, in aluminum metal layer One kind, described conductive layer thickness be 100～1000nm.

Further, described protective layer thickness is 10～100nm.

Further, described first including transparent conducting oxide layer surface is provided with and is made using silk screen printing low temperature silver paste Sensitive surface primary gate electrode, described sensitive surface primary gate electrode height is 10～40um.

Further, described protective layer is provided with the shady face main grid electricity made using silk screen printing low temperature silver paste Pole, described shady face primary gate electrode height is 10～40um.

From the above-mentioned description to this utility model structure, compared to the prior art, this utility model has excellent as follows Point：

This utility model passes through shady face pellicular cascade structure, effectively improves battery shady face electrode and collects transmission electric current Ability, lifts battery conversion efficiency, reduces the low temperature silver paste consumption of shady face electrode, reduces production cost, described protective layer Can anti-oxidation.And the corrosion of alkali can be resisted.

Brief description

The accompanying drawing constituting the part of the application is used for providing further understanding to of the present utility model, of the present utility model Schematic description and description is used for explaining this utility model, does not constitute to improper restriction of the present utility model.In accompanying drawing In：

Fig. 1 is a kind of structural representation of efficient heterojunction solar battery of this utility model；

Fig. 2 is a kind of shady face structural representation of efficient heterojunction solar battery of this utility model.

Specific embodiment

In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement Example, is further elaborated to this utility model.It should be appreciated that specific embodiment described herein is only in order to explain This utility model, is not used to limit this utility model.

With reference to Fig. 1, Fig. 2, a kind of efficient heterojunction solar battery, including n-type silicon substrate 1, it is sequentially deposited at n-type silicon lining First deposition intrinsic amorphous silicon layer 2 of bottom 1 sensitive surface, N-shaped amorphous silicon layer 3 and the first including transparent conducting oxide layer 4, are sequentially depositing In the second deposition intrinsic amorphous silicon layer 5 of n-type silicon substrate 1 shady face, p-type amorphous silicon layer 6 and the second including transparent conducting oxide layer 7, N-shaped amorphous silicon layer 3 and p-type amorphous silicon layer 6 are made using CVD, wherein the surface reflectivity of n-type silicon substrate 300～ It is less than 5%, the first including transparent conducting oxide layer 4 and the second including transparent conducting oxide layer 7 adopt ITO layer in 1100nm wave-length coverage Or the indium oxide layer of doping, its characteristic is the material that light passes through 100 nano thickness, and its transmitance is at least greater than 90%, first The resistivity of including transparent conducting oxide layer 4 and the second including transparent conducting oxide layer 7 is generally less than 3.5 × 10-4ohm-cm, its Thickness is 50～120nm, and the second including transparent conducting oxide layer 7 of described n-type silicon substrate 1 shady face is provided with conductive layer 8, described Conductive layer 8 is provided with protective layer 9, and described second including transparent conducting oxide layer 7, conductive layer 8, protective layer 9 are built up shady face Pellicular cascade.

Wherein, conductive layer 8 is one of copper metal layer, ambrose alloy metal level, nickel metal layer, silver metal layer, aluminum metal layer, Conductive layer 8 thickness be 100～1000nm, protective layer 9 be including transparent conducting oxide layer or silver layer, protective layer thickness be 10～ 100nm.

The sensitive surface main grid made using silk screen printing low temperature silver paste is provided with the first including transparent conducting oxide layer 4 surface Electrode 10, sensitive surface primary gate electrode 10 height is 10～40um, is provided with using silk screen printing low temperature silver paste on protective layer 8 surface The shady face primary gate electrode 11 made, shady face primary gate electrode 11 height is 10～40um.

This utility model adopts shady face pellicular cascade structure design it is not necessary to the very intensive grid line of printing, causes low Warm silver paste consumption is larger, effectively improves the ability that battery shady face electrode collects transmission electric current, lifts battery conversion efficiency, reduces The low temperature silver paste consumption of shady face electrode, reduces and produces life originally.

The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all this Any modification, equivalent and improvement made within the spirit of utility model and principle etc., should be included in this utility model Protection domain within.

Claims

1. a kind of efficient heterojunction solar battery it is characterised in that：Including n-type silicon substrate, it is sequentially deposited at n-type silicon substrate and is subject to First deposition intrinsic amorphous silicon layer of bright finish, N-shaped amorphous silicon layer and the first including transparent conducting oxide layer, are sequentially deposited at n-type silicon Second deposition intrinsic amorphous silicon layer of substrate shady face, p-type amorphous silicon layer and the second including transparent conducting oxide layer, described n-type silicon Second including transparent conducting oxide layer of substrate shady face is provided with conductive layer, and described conductive layer is provided with protective layer, and described second Including transparent conducting oxide layer, conductive layer, protective layer are built up shady face pellicular cascade, and described protective layer is transparent conductive oxide Nitride layer or silver layer.

2. according to claim 1 a kind of efficient heterojunction solar battery it is characterised in that：Described conductive layer is copper metal Layer, one of ambrose alloy metal level, nickel metal layer, silver metal layer, aluminum metal layer, described conductive layer thickness is 100～1000nm.

3. according to efficient heterojunction solar battery a kind of described in claim 1 it is characterised in that：Described protective layer thickness be 10～ 100nm.

4. according to efficient heterojunction solar battery a kind of described in claim 1 it is characterised in that：Described first transparent conductive oxide Nitride layer surface is provided with the sensitive surface primary gate electrode made using silk screen printing low temperature silver paste, described sensitive surface primary gate electrode height For 10～40um.

5. a kind of efficient heterojunction solar battery described in claim 1 it is characterised in that：Described protective layer is provided with to be adopted The shady face primary gate electrode made with silk screen printing low temperature silver paste, described shady face primary gate electrode height is 10～40um.