CN104916785A - CH3NH3PbI3 thin-film solar cell preparation method - Google Patents

CH3NH3PbI3 thin-film solar cell preparation method Download PDF

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CN104916785A
CN104916785A CN201510309060.6A CN201510309060A CN104916785A CN 104916785 A CN104916785 A CN 104916785A CN 201510309060 A CN201510309060 A CN 201510309060A CN 104916785 A CN104916785 A CN 104916785A
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pbi
evaporation
thin
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solar cells
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方泽波
徐闰
谭永胜
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University of Shaoxing
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a preparation method for a CH3NH3PbI3 thin film and a solar cell thereof, which belongs to the field of novel material device manufacturing techniques. The CH3NH3PbI3 thin film preparation method comprises the steps that a CH3NH3PbI3 solution based (CH3COO)<2>Pb is used as a single evaporation source, a metal evaporation boat is heated rapidly to a temperature above 1000 DEG C in less than 1 second, and the CH3NH3PbI3 thin film with accurate components can be prepared. The CH3NH3PbI3 thin film prepared by adopting the single source reaction flash vaporization method has the advantages of fast reaction rate, fast evaporation rate, cavity-free property and long service life, and is suitable for manufacturing planar devices. Further, a p-i-n type planar solar cell deice is composed of TiO2 or ZnO which is adopted as n-type materials, Spiro-OMeTAD which is adopted as p-type materials and the i-type CH3NH3PbI3 thin film, and the device with the efficiency of 8.85% can be obtained after optimizing the preparation conditions.

Description

A kind of CH 3nH 3pbI 3thin-film solar cells preparation method
Technical field
The present invention relates to a kind of preparation method of solar device, specifically relate to a kind of CH 3nH 3pbI 3the thin-film solar cells preparation method of material, belongs to new material device fabrication field.
Background technology
The world today, along with earth resource day by day reduce and the mankind to the continuous increase of energy demand, energy crisis is extremely urgent.In order to survival and development, the mankind must seek the reproducible clean new forms of energy that can substitute conventional energy resource, and one of selection is wherein solar power generation.Solar energy has and stores huge, never exhausted, and cleanliness without any pollution, not by advantages such as region restrictions is the most important new forms of energy of the mankind.
Current solar cell mainly comprises crystal silicon cell and thin-film solar cells, and wherein thin-film solar cells is few because producing materials, and low price, the advantages such as plasticity is good become the development trend of solar-energy photo-voltaic cell.Now, the hull cell material of two kinds of main flow industrialization is cadmium telluride (CdTe) and Copper Indium Gallium Selenide (CIGS), and they all containing element (Te and In) rare in the earth's crust, are therefore not suitable for large-scale production.Recently, a kind of with CH 3nH 3pbI 3organic inorganic hybridization perovskite material thin-film solar cells for representative obtains the extensive concern of academia.Contained by this kind of organic inorganic hybridization perovskite material, element is in the earth's crust and is rich in element, can be mass-produced, and cheap.Started from 2012, with CH 3nH 3pbI 3in research for absorbent body layer solar cell, its conversion efficiency rose violently rapidly in short 1 year, breached 15%.By in June, 2014, the peak efficiency of empirical tests can reach 17.9%.This makes this material very likely become follow-on main flow thin-film solar cells material, thus has also attracted the concern of large quantities of researcher both domestic and external.The preparation method of this material is mainly chemical method.As spin-coating method and the two-step method etc. based on spin-coating method.These two kinds of methods all can based on porous material TiO 2with deposit high-quality film in ZnO, thus obtain high efficiency.But not too applicable for planar device, chief reason is that this material material when after-bake is annealed is easy to cohesion and forms large grain size, thus makes to occur cavity between large grain size.This will reduce the absorption of photon, and reduces parallel resistance simultaneously, and device efficiency is reduced.On the other side, the method based on vacuum can obviously improve plastic film covering degree.As Henry Snaith adopts double source method can prepare film without empty little crystal grain, but double source method controls complicated, two independently evaporation source need stable being operated in determine in the speed of ratio.In addition, for realizing high-quality thin film, evaporation rate very slow, general needs controls within 0.5 dust is per second.Speed low is like this not suitable for large-scale production.And the physical growth method that growth rate is higher is instantly all based on PbI 2, CH 3nH 3i and PbI 2chemical reaction process comparatively slow, this can cause CH in the process of evaporation at a high speed 3nH 3i and PbI 2course of reaction greatly lag behind the process of heating evaporation, thus make the CH for preparing 3nH 3pbI 3film causes the conversion efficiency of battery and life-span all lower because there is impurity.
Have based on this, propose the present invention.
Summary of the invention
For the above-mentioned technical problem of prior art, the object of this invention is to provide a kind of CH 3nH 3pbI 3the thin-film solar cells preparation method of material, adopts based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3solution does evaporation source, directly prepares the CH of surface without cavity by single source reactive flash method with the evaporation rate be exceedingly fast 3nH 3pbI 3perovskite thin film as the absorbed layer of solar cell, and prepares corresponding solar cell device, for the organic inorganic hybridization perovskite thin film solar cell preparing high conversion efficiency provides a kind of new technique.
For achieving the above object, the present invention is achieved by the following technical solutions:
A kind of CH 3nH 3pbI 3thin-film solar cells preparation method, comprises the following steps:
(1), use suitable material as substrate, after preliminary treatment, at described deposited on substrates N-shaped material, then put on the sample stage of vacuum evaporation apparatus;
(2), CH 3nH 3i and (CH 3cOO) 2pb powder is dissolved in organic solvent according to a certain percentage, is prepared into based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3solution;
(3), by step (2) based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3dissolution homogeneity be laid on pretreated evaporation of metal boat;
(4), at cavity air pressure lower than 5x10 -3under the condition of Pa or inert gas, by single source reactive flash method evaporation CH 3nH 3pbI 3film;
(5) film, completed by evaporation carries out post annealed process;
(6) CH, prepared 3nH 3pbI 3spin coating hole transmission layer on thin-film material;
(7), electrode evaporation, obtain CH 3nH 3pbI 3thin-film solar cells.
Described step (1) is as deposition substrate using transparent conducting glass, adopt Qu Latong clean surface, after the Qu Latong of surface residual being rinsed out with clear water, adopt acetone ultrasonic cleaning 15 minutes, then use deionized water rinsing surface, then clean 15 minutes with EtOH Sonicate, use deionized water rinsing surface again, dried subsequently, then adopt UV ozone or Microwave plasma treatment surface, the transparent conducting glass that preliminary treatment completes adopts the method depositing Ti O of magnetron sputtering 2or ZnO.
The method depositing Ti O of described magnetron sputtering 2or ZnO is: adopt high-purity Ti O 2or ZnO is as sputtering target material, first sputtering chamber is evacuated to 5x10 -3pa, then pass into Ar gas, sputtering pressure remains on 0.6Pa, and sputtering power is 150W, and sputtering time 36 minutes can deposit the fine and close TiO of one deck 50-100 nanometer thickness on transparent conducting glass 2or ZnO film.
Described transparent conducting glass is the SnO mixing F 2, mix the ZnO of Al or mix the In of Sn 2o 3.
Described step (2) is by CH 3nH 3i and (CH 3cOO) 2the powder of Pb is successively dissolved in gamma-butyrolacton according to certain ratio, adds thermal agitation 1-12 hour, make the two mix, thus be mixed with based on (CH under the condition of 25-100 ° of C 3cOO) 2the CH of Pb 3nH 3pbI 3solution.
Described step (3) is based on (CH by a certain amount of 3cOO) 2the CH of Pb 3nH 3pbI 3solution drops on evaporation of metal boat, then smears evenly, makes it complete and cover evaporation boat surface equably.
Described step (4) is for be evacuated to cavity air pressure lower than 5x10 -3pa, continue to keep pumping speed to keep this vacuum degree, maybe can close vacuum pump or valve, or pass into inert gas to 1-100Pa, then load 80-250A or keep this conditioned disjunction to pass into inert gas, then within the time being less than 1 second, be rapidly heated raw material to being greater than 1000-1500 ° of C, whole evaporation time is less than 5 seconds.
Described step (5) is the CH completed by evaporation completed by evaporation 3nH 3pbI 3film is at N 2the film that 5-60 minute can form densification, well-crystallized is toasted under the condition of atmosphere and 70-150 ° of C.
Described step (6) is that Spiro-OMeTAD is spin-coated on as hole transmission layer the CH that evaporation completes 3nH 3pbI 3on thin-film material.
Described step (7) is the material surface after spin coating hole transmission layer, by gold or the silver electrode of the method evaporation definite shape of vacuum evaporation, thus obtains CH 3nH 3pbI 3solar cell.
By the method, can implementation efficiency be finally the preparation of the perovskite solar cell of 8.13%.
The physical growth method that the present invention adopts a kind of growth rate simple to operate that is swift in response high, namely based on (CH 3cOO) 2single source reactive flash legal system of Pb is for CH 3nH 3pbI 3thin-film material, and obtain high efficiency solar cell device.This preparation method uses based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3solution does evaporation source, makes it on metal boat, form smooth thin layer when vacuumizing.Subsequently under vacuum or N 2or be rapidly heated with the extremely short time under the atmosphere of inert gas, general needs rises to 1000 degree being less than in 1 second, and keeps the time being less than 10 seconds, thus realizes rapid evaporation.Due to CH 3nH 3i and (CH 3cOO) 2chemical reaction velocity between Pb is exceedingly fast, therebetween total overall reaction process can complete in 10 seconds, thus the process of fast reaction and rapid evaporation almost can be terminated simultaneously, this can allow the efficiency of solar cell and life-span be further improved.The method is simple to operate, and the extremely pure and uniform outer surface of the film prepared is without cavity.Adopt the material prepared of the method as absorbed layer, TiO 2or ZnO is N-shaped material, Spiro-OMeTAD or P 3hT as p-type material, thus forms p-i-n junction type device, and achieves the battery efficiency of more than 8%.
The present invention compared with the existing technology, has following beneficial effect:
1, evaporation source of the present invention adopts based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3solution, is a kind of brand-new evaporation source, can improves efficiency and the life-span of battery to a certain extent.
2, method of the present invention belongs to physics preparation method, and process is simple, is easy to operation, favorable repeatability.
3, the CH for preparing of method of the present invention 3nH 3pbI 3film surface is smooth without cavity, has good uniformity.
4, single source of the present invention reactive flash method has the feature of evaporation at a high speed, is easy to large-scale production.
Accompanying drawing explanation
Fig. 1 is the standby CH of single source reactive flash legal system 3nH 3pbI 3film X-ray diffractogram;
Fig. 2 is the standby CH of single source reactive flash legal system 3nH 3pbI 3the scanning electron microscope diagram of film;
Fig. 3 is the standby CH of single source reactive flash legal system 3nH 3pbI 3the current/voltage figure of thin-film solar cells, tests under the illumination condition of 1.5AM.
Embodiment
Below in conjunction with specific embodiment, the present invention is further illustrated, but protection scope of the present invention is not limited to this.
A kind of CH of the present invention 3nH 3pbI 3thin-film solar cells preparation method, comprises the following steps:
(1), by transparent conducting glass SnO 2: F, namely mixes the SnO of F 2be called for short FTO as deposition substrate, first adopt Qu Latong clean surface, then rinse out with the Qu Latong of clear water by surface residual, adopt acetone ultrasonic cleaning 15 minutes afterwards, then use deionized water rinsing surface, clean 15 minutes with EtOH Sonicate more afterwards, use deionized water rinsing surface again, dried subsequently.Finally adopt UV ozone process 10 minutes, also can adopt Microwave plasma treatment 10 minutes.
(2), transparent conducting glass SnO after the pre-treatment 2: on F, adopt the method depositing Ti O of magnetron sputtering 2, this process adopts high-purity Ti O 2as sputtering target material, first sputtering chamber is evacuated to 5x10 -3pa, then pass into Ar gas, sputtering pressure remains on 0.6Pa, and sputtering power is 150W, and sputtering time 36 minutes can at transparent conducting glass SnO 2: the fine and close TiO of F upper deposition one deck 50 nanometer thickness 2film, this film also can 60,70,80,90 or 100 nanometer thickness, between 50-100 nanometer.
(3), the N-shaped TiO of 50 nanometers will be scribbled 2the transparent conducting glass SnO of film 2: F puts on the sample stage of vacuum evaporation apparatus.Subsequently CH 3nH 3i and (CH 3cOO) 2the powder of Pb is successively dissolved in gamma-butyrolacton or other solvent according to the molar ratio of 3:1, adds thermal agitation 12 hours, make the two mix, thus be mixed with based on (CH under the condition of 50 DEG C 3cOO) 2the CH of Pb 3nH 3pbI 3solution, wherein the mass percent of solution is 40%.Also can add thermal agitation 12 hours under the condition of 25 DEG C, 45 DEG C, 60 DEG C, 85 DEG C, 94 DEG C or 100 DEG C, this temperature is at 25-100 DEG C.
(4), CH 3nH 3pbI 3being applied on molybdenum sheet of dissolution homogeneity.At cavity air pressure lower than 5x10 -3pa and sample substrate temperature are under the condition of room temperature, by single source reactive flash method evaporation CH 3nH 3pbI 3film.The key of single source reactive flash method is raw material to be rapidly heated within the time being less than 1 second to being greater than 1000 DEG C, electric current used is 200 amperes, also can 80A, 95A, 105A, 120A, 150A or 250A, between 80-250A, decide size of current according to the material of boat and shape, whole evaporation time is less than 5 seconds.The thickness of film depends primarily on the distance between the consumption of solution and source and substrate.The amount of solution that the film of general 500nm needs is 100 microlitres, and the distance between source and substrate is about 12cm.The smooth CH without cavity can be realized by the method 3nH 3pbI 3the high speed deposition of thin-film material.The structure of film and surface topography are respectively as Fig. 1 and Fig. 2.
(5) on the perovskite thin film material, at evaporation completed after spin coating hole transmission layer Spiro-OMeTAD, then evaporation silver electrode, complete the preparation of perovskite solar cell.
(6), by the organic inorganic hybridization plane solar cell obtained by above method under the illumination condition of 1.5AM, this shorted devices electric current can reach 16.06mA/cm 2, open circuit voltage is 875mV, and fill factor, curve factor is 0.63, and the energy efficiency of this thin-film solar cells is 8.85%, as shown in Figure 3.
In the present invention, the transparent conducting glass in step (1) can also mix the ZnO of Al for AZO() or ITO(mix the In of Sn 2o 3).Also can be rapidly heated to being greater than 1000-1500 DEG C within the time being less than 1 second by raw material in step (4), whole evaporation time is less than 5 seconds.
The invention belongs to new material device fabrication field, with based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3solution does single evaporation source, adopts the time being less than 1 second evaporation of metal boat to be heated to rapidly the temperature of more than 1000 DEG C, can prepare composition CH accurately 3nH 3pbI 3film.Adopt the CH that single source reactive flash legal system is standby 3nH 3pbI 3thin film responds, and speed is fast, evaporation rate fast, and film is without cavity, and the life-span is long, is applicable to the feature doing planar device.And adopt TiO 2or ZnO is N-shaped material, Spiro-OMeTAD is the CH of p-type material and i type 3nH 3pbI 3film forms p-i-n type plane solar energy battery device together, can obtain the device that efficiency is 8.85% after optimized fabrication condition.
Above-described embodiment only illustrates inventive concept of the present invention for explaining, but not the restriction to rights protection of the present invention, all changes utilizing this design the present invention to be carried out to unsubstantiality, all should fall into protection scope of the present invention.

Claims (10)

1. a CH 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that comprising the following steps:
(1), use suitable material as substrate, after preliminary treatment, at described deposited on substrates N-shaped material, then put on the sample stage of vacuum evaporation apparatus;
(2), CH 3nH 3i and (CH 3cOO) 2pb powder is dissolved in organic solvent according to a certain percentage, is prepared into based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3solution;
(3), by step (2) based on (CH 3cOO) 2the CH of Pb 3nH 3pbI 3dissolution homogeneity be laid on pretreated evaporation of metal boat;
(4), at cavity air pressure lower than 5x10 -3under the condition of Pa or inert gas, by single source reactive flash method evaporation CH 3nH 3pbI 3film;
(5) film, completed by evaporation carries out post annealed process;
(6) CH, prepared 3nH 3pbI 3spin coating hole transmission layer on thin-film material;
(7), electrode evaporation, obtain CH 3nH 3pbI 3thin-film solar cells.
2. CH as claimed in claim 1 3nH 3pbI 3thin-film solar cells preparation method, it is characterized in that: described step (1) is as deposition substrate using transparent conducting glass, adopt Qu Latong clean surface, after the Qu Latong of surface residual being rinsed out with clear water, adopt acetone ultrasonic cleaning 15 minutes, then deionized water rinsing surface is used, 15 minutes are cleaned again with EtOH Sonicate, use deionized water rinsing surface again, dried subsequently, then adopt UV ozone or Microwave plasma treatment surface, the transparent conducting glass that preliminary treatment completes adopts the method depositing Ti O of magnetron sputtering 2or ZnO.
3. CH as claimed in claim 2 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that the method depositing Ti O of described magnetron sputtering 2or ZnO is: adopt high-purity Ti O 2or ZnO is as sputtering target material, first sputtering chamber is evacuated to 5x10 -3pa, then pass into Ar gas, sputtering pressure remains on 0.6Pa, and sputtering power is 150W, and sputtering time 36 minutes can deposit the fine and close TiO of one deck 50-100 nanometer thickness on transparent conducting glass 2or ZnO film.
4. CH as claimed in claim 2 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that: described transparent conducting glass is the SnO mixing F 2, mix the ZnO of Al or mix the In of Sn 2o 3.
5. CH as claimed in claim 1 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that: described step (2) is by CH 3nH 3i and (CH 3cOO) 2the powder of Pb is successively dissolved in gamma-butyrolacton according to certain ratio, adds thermal agitation 1-12 hour, make the two mix, thus be mixed with based on (CH under the condition of 25-100 DEG C 3cOO) 2the CH of Pb 3nH 3pbI 3solution.
6. CH as claimed in claim 1 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that: described step (3) is based on (CH by a certain amount of 3cOO) 2the CH of Pb 3nH 3pbI 3solution drops on evaporation of metal boat, then smears evenly, makes it complete and cover evaporation boat surface equably.
7. CH as claimed in claim 1 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that: described step (4) is for be evacuated to cavity air pressure lower than 5x10 -3pa, continue to keep pumping speed to keep this vacuum degree, maybe can close vacuum pump or valve, or pass into inert gas to 1-100Pa, then load 80-250A or keep this conditioned disjunction to pass into inert gas, then be rapidly heated to being greater than 1000-1500 DEG C within the time being less than 1 second by raw material, whole evaporation time is less than 5 seconds.
8. CH as claimed in claim 1 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that: described step (5) is the CH completed by evaporation completed by evaporation 3nH 3pbI 3film is at N 2the film that 5-60 minute can form densification, well-crystallized is toasted under the condition of atmosphere and 70-150 DEG C.
9. CH as claimed in claim 1 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that: described step (6) is that Spiro-OMeTAD is spin-coated on as hole transmission layer the CH that evaporation completes 3nH 3pbI 3on thin-film material.
10. CH as claimed in claim 1 3nH 3pbI 3thin-film solar cells preparation method, is characterized in that: described step (7) is the material surface after spin coating hole transmission layer, by gold or the silver electrode of the method evaporation definite shape of vacuum evaporation, thus obtains CH 3nH 3pbI 3solar cell.
CN201510309060.6A 2015-06-09 2015-06-09 CH3NH3PbI3 thin-film solar cell preparation method Pending CN104916785A (en)

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CN109155366A (en) * 2016-03-18 2019-01-04 洛桑联邦理工学院 High efficiency large area perovskite solar battery and its production technology
CN109155366B (en) * 2016-03-18 2023-04-11 洛桑联邦理工学院 High-efficiency large-area perovskite solar cell and production process thereof
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CN106098948A (en) * 2016-06-13 2016-11-09 上海大学 The perovskite thin film of single step flash method growing large-size crystal grain and the preparation method of plane solaode
CN106784316A (en) * 2016-07-22 2017-05-31 河北工业大学 Thin film solar cell that a kind of perovskite monocrystal material is combined with crystallite silicon composite and preparation method thereof
CN106972100A (en) * 2016-07-22 2017-07-21 河北工业大学 Thin film solar cell that a kind of perovskite monocrystal material is combined with p type single crystal silicon and preparation method thereof
CN110350093A (en) * 2018-04-08 2019-10-18 华中科技大学 A kind of method and its application preparing solar battery light-absorption layer based on fusion method
CN110350093B (en) * 2018-04-08 2021-07-27 华中科技大学 Method for preparing light absorption layer of solar cell based on melting method and application thereof
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CN108832005B (en) * 2018-06-25 2022-04-01 陕西师范大学 Preparation of high-efficiency CsPbBr by single-source thermal evaporation method3Method for inorganic perovskite battery
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Application publication date: 20150916