CN106098948A - The perovskite thin film of single step flash method growing large-size crystal grain and the preparation method of plane solaode - Google Patents
The perovskite thin film of single step flash method growing large-size crystal grain and the preparation method of plane solaode Download PDFInfo
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Abstract
The invention discloses perovskite thin film and the preparation method of plane solaode of a kind of single step flash method growing large-size crystal grain, wherein perovskite thin film preparation method is to do single evaporation source with the solution of perovskite material, use moment that electric current quickly adds to rapidly 200A, evaporator temperature moment is made to reach more than 1000 DEG C, material moment distils, by adjusting different solutions proportioning, prepare that composition is controlled and the perovskite thin film of big crystallite dimension.It is low that the perovskite thin film using a step flash method to prepare has energy consumption, and evaporation rate is fast, and the time is short, and thin film is uniform without cavity and large area, and the substrate range of choice is wide, is suitable for doing the feature of planar device.Use PCBM is n-type material simultaneously, and Spiro OMeTAD is that p-type material constitutes p i N-shaped plane solar energy battery device together with the perovskite thin film of i type, can obtain the efficiency device more than 10.01% after optimizing preparation condition.
Description
Technical field
The present invention relates to the preparation method of a kind of solaode, particularly relate to the system of a kind of plane solaode
Preparation Method, is applied to thin-film solar cells manufacturing process technology field.
Background technology
Society, the development of the mankind is day by day rapid, and the development of human society then be unable to do without the energy.For a long time, people
The main energy sources that class utilizes has the non-renewable energy resources such as coal, oil and natural gas.Since entering 21 century, along with people are raw
Producing the rapid raising lived, the most significantly increase the demand of the energy with consuming, non-renewable energy resources are faced with the danger of exhaustion
Machine, therefore finding novel, clean regenerative resource becomes the task of top priority.Multiple new forms of energy are had constantly to be utilized exploitation at present,
Such as solar energy, water energy, wind energy etc..Wherein solar energy is due to its innumerable and stability of originating, and becomes and most has development potentiality
Renewable new forms of energy.Mode currently with solar energy mainly has two kinds: photothermal deformation and opto-electronic conversion.Photothermal conversion is
Being widely used, its topmost representative is exactly solar water heater；Photoelectric conversion is then in the high speed development stage, and it is
Good mode is exactly solaode, is also called photovoltaic cell.Solaode during photoelectric conversion, pollution-free, zero-emission
Put, do not produce any noise and radiation, be a kind of eco-friendly green energy resource excellence reforming unit.
In photovoltaic market, crystal silicon solar energy battery is still occupied an leading position at present, and efficiency is close to 20%.But monocrystal silicon consumes
Time power consumption.Although material saved by second filial generation solaode, growth cost is low, but also has unavoidable shortcoming, Te, In,
Ga etc. are the elements that on the earth, reserves are little, more rare than Au, this will make its cannot large-scale production, strong influence its
The output value.Third generation solar cell, such as organic photovoltaic (OPVs), DSSC (DSCs) and the quantum dot sun
Can battery (QDSCs), be by blade coating by solution, Shiscreen printing and the technique such as spraying be coated in unconventional substrate thus
Ensure low-cost solar cell power generation.Recently, the fast development of a kind of new material has attracted industrial circle and many researcheres
Attention.There is the CH of perovskite structure3NH3PbX3L material, be a kind of energy gap be the direct band gap material of 1.5eV, its
Middle X=I, Br or C.With CH3NH3PbX3L material is that the conversion efficiency of the solaode of absorbent body layer is the most fast
Speed rises violently, and 3.8% from the beginning has broken through to 20.1%, becomes the study hotspot of domestic and international photovoltaic art.The system of this material
Preparation Method is mainly chemical method.Such as spin-coating method and two-step method based on spin-coating method etc..Both approaches all can be based on porous
Material TiO2With ZnO deposits high-quality thin film, thus obtain high efficiency.But the thin film prepared due to spin-coating method is uneven
Whole, coverage rate is the highest, and this will reduce the absorption of photon, and reduce parallel resistance simultaneously, makes device efficiency reduce, for plane
Device unsuitable for, on the other side, method based on vacuum can obviously improve thin film coverage.As professor Snaith uses
The double source method of steaming altogether substantially improve thin film prepared by the spin-coating method deficiency on coverage rate, thickness evenness and pore quantity,
Defining continuous print thin film, its crystallite dimension is in micron dimension.But double source method controls complexity, two independent evaporation sources need control
System, in certain temperature range, is that evaporation rate can stable determine in ratio.It addition, for realizing high-quality thin film, evaporation speed
Rate needs very slow, it is generally required to control per second at 0.5 angstrom within.The lowest speed is not suitable for large-scale production.
Summary of the invention
In order to solve prior art problem, it is an object of the invention to the deficiency overcoming prior art to exist, it is provided that a kind of
The perovskite thin film of single step flash method growing large-size crystal grain and the preparation method of plane solaode, use perovskite material
Solution or the powder of material do evaporation source, directly prepare the perovskite thin film absorbed layer as solaode with single step flash method,
And prepare corresponding solar cell device, provide a kind of new for preparing the perovskite thin film solaode of high conversion efficiency
Technique.
Creating purpose for reaching foregoing invention, the present invention uses following technical proposals:
The preparation method of the perovskite thin film of a kind of single step flash method growing large-size crystal grain, comprises the following steps:
A. perovskite material dispensing: use N, N-Dimethylformamide (DMF) and γ-butyrolactone
(GBL) any one or the most several mixture in, as organic solvent, have been dissolved in the material powder that two kinds different
Machine solvent is prepared as ABX3Type organic inorganic hybridization perovskite solution, or the material powder that two kinds different is mixed
ABX3Type organic inorganic hybridization perovskite powders, the material powder that two of which is different is respectively AX powder and BX2Powder, wherein A
Being monovalence organic molecule group of making a comment or criticism, B is positive divalent metal element, and X is the halogen of negative one valency, is carrying out perovskite material
During material dispensing, the AX powder in the material powder of employing and BX2The material mol ratio of powder is (1.0 ~ 3.0): 1, according to difference
Raw material adjust proportioning parameter；As currently preferred technical scheme, when carrying out perovskite material dispensing, it is preferred to use
Material powder in AX powder be CH3NH3X, i.e. A are the CH of positive monovalence3NH3Organic molecule group, it is preferred to use former
BX in material powder2Powder is PbX2, i.e. B is Pb metallic element, and X is preferably I, Br or Cl element, prepared ABX3Type is organic
Inorganic hybridization perovskite solution is CH3NH3PbX3Perovskite solution, or the ABX of preparation3Type organic inorganic hybridization perovskite powder
End is CH3NH3PbX3Perovskite powders；
B. the perovskite thin film of single step flash method growing large-size crystal grain: use the ABX of preparation in described step a3Type is organic
Inorganic hybridization perovskite solution or ABX3Type organic inorganic hybridization perovskite powders does single evaporation source, is carried out by evaporation of metal boat
Pretreatment, evaporation of metal boat preferably employs tantalum piece, molybdenum sheet or leaf and makes, and uses flash method apparatus, by perovskite solution
Transfer is coated on evaporation of metal boat be formed liquid film, or perovskite powders is laid on evaporation of metal boat formation powder uniformly
Last layer, then inserts the evaporation of metal boat after charging in the vaporization chamber of steaming method apparatus；Again the air pressure in vaporization chamber is taken out
Vacuum is to less than 5 × 10-3Pa, and continue the vacuum keeping pumping speed to keep vaporization chamber, or close vacuum pump and gas piping
Valve, and be passed through noble gas or nitrogen make vaporization chamber internal gas pressure to 1-100Pa, when atmosphere pressure conditional stability in vaporization chamber
After, load and be not less than the electric current of 200A, by the perovskite material solution on evaporation of metal boat or perovskite material powder less than 1
It is rapidly heated to 1000-1500 DEG C in the time of second, makes the perovskite material solute in perovskite material solution or perovskite material
Material powder moment distillation, controls evaporation process and is less than 5 seconds, by flash method, by the perovskite material in perovskite material solution
Solute or perovskite material powder are deposited with on substrate, i.e. prepare the perovskite thin film of big crystallite dimension on substrate.
As currently preferred technical scheme, in described step a when carrying out perovskite material dispensing, by adjusting
AX powder and BX2Perovskite material proportioning raw materials when powder mixes, and in the material powder preferably employed further
AX powder and BX2The material mol ratio of powder is 2.0:1, finally prepares in described step b that composition is controlled and big crystal grain
The perovskite thin film of size.
Calcium prepared by the preparation method of a kind of perovskite thin film utilizing single step flash method growing large-size crystal grain of the present invention
Titanium ore thin film, as the preparation method of the plane solaode of absorbent body layer, comprises the following steps:
(1) substrate pre-treatment and prepare electron transfer layer: substrate uses transparent conducting glass substrate or silicon chip, carries out pre-to substrate
Processing, use PCBM as n-type material, then one layer of electron transfer layer PCBM of spin coating on substrate, as evaporation lining after solidification
The end, is standby, the preprocessing process that wherein substrate carried out particularly as follows:
When using transparent conducting glass substrate, it is preferred to use FTO or ITO, substrate is FTO, i.e. mixes the SnO of F2；Or ITO, i.e.
Mix the In of Sn2O3, first use TritonX to clean transparent conducting glass substrate surface, then clean with deionized water, adopt the most respectively
Clean 15 minutes with acetone, EtOH Sonicate, finally use UV ozone or Microwave plasma treatment transparent conducting glass substrate
Surface, i.e. completes transparent conducting glass substrate pre-treatment；When using silicon chip as substrate, first by RCA standard cleaning method to silicon
After sheet cleans, at 900 DEG C, being passed through dry oxygen and carry out aoxidizing 10 minutes, aoxidizing out a layer thickness at silicon chip surface is 83 nm
Silicon dioxide layer, i.e. complete silicon chip pretreatment；
(2) prepared by absorbent body layer: use the single step flash method of described step b, will combine electric transmission in described step (1)
Substrate after layer PCBM is put on the sample stage of flash method apparatus, grows on the layer electron transfer layer PCBM of substrate
The perovskite thin film material layer of the i type of large scale crystal grain, makes perovskite thin film material layer as absorbent body layer and electric transmission
Layer combines；
(3) prepared by hole transmission layer: Spiro-OMeTAD is as p-type material, at the perovskite that described step (2) prepares in employing
Spin coating Spiro-OMeTAD material layer on thin film, as hole transmission layer after solidification, with and in the described step (2) master of preparation
The perovskite thin film material layer of absorbing layer i type constitutes p-together with the electron transfer layer n-type material layer prepared in step (1)
I-n type planar photo device；
(4) use vacuum evaporation method, described step (3) is deposited with on the hole transmission layer of preparation preparation there is setting pattern
The gold electrode of shape or silver electrode, thus prepare plane solar cell device.
The present invention compared with prior art, has and the most obviously highlights substantive distinguishing features and remarkable advantage:
1. the present invention uses simple and the physical growth method of fast growth, i.e. single step flash method, prepares organic inorganic hybridization calcium
Titanium ore thin-film material, and obtain high efficiency solar cell device, compared with the double source method of prior art and spin-coating method,
It is little with substrate dependence that the present invention uses single step flash method to prepare thin film, and is low temperature process, and the substrate range of choice is wide, it is simple to
Graphical preparation, and save material, the province that saves time can, it is easy to large-scale production；
2. the inventive method process is simple, it is easy to operation, favorable repeatability, can prepare large area uniform, and flatness is high, crystal grain
The thin film that size is big, the inventive method can realize the preparation of the electricity conversion perovskite solaode more than 10.01%.
Accompanying drawing explanation
Fig. 1 is the flash method apparatus structural representation that the embodiment of the present invention one uses.
Fig. 2 is the CH that the embodiment of the present invention one uses prepared by single step flash method3NH3PbI3Thin film X-ray diffractogram.
Fig. 3 is the CH that the embodiment of the present invention one uses prepared by single step flash method3NH3PbI3The scanning electron microscope of thin film
Figure.
Fig. 4 is the plane CH of the embodiment of the present invention one preparation3NH3PbI3Thin-film solar cells functional layer structure is illustrated
Figure.
Fig. 5 is the plane CH of the embodiment of the present invention one preparation3NH3PbI3Thin-film solar cells device sectional view.
Fig. 6 is the CH of the embodiment of the present invention one preparation3NH3PbI3Thin-film solar cells is under the illumination condition of 1.5AM
Current/voltage test figure.
Detailed description of the invention
Details are as follows for the preferred embodiments of the present invention:
Embodiment one:
In the present embodiment, see Fig. 1～6, a kind of utilize perovskite thin film as the plane solar-electricity of absorbent body layer
The preparation method in pond, comprises the following steps:
(1) substrate pre-treatment: substrate uses FTO transparent conducting glass substrate, first etches required with zinc powder and dilute hydrochloric acid
Pattern, deionized water rinsing is clean, then uses TritonX to clean transparent conducting glass substrate surface, removes the dirt of substrate surface
Stain, then cleans with deionized water, is rinsed out by the TritonX that substrate surface is remaining, be respectively adopted acetone, EtOH Sonicate afterwards
Clean 15 minutes, then use deionized water rinsing surface, subsequently substrate surface air gun is dried up, finally use at UV ozone
Reason transparent conducting glass substrate surface, i.e. completes transparent conducting glass substrate pre-treatment；
(2) electron transfer layer is prepared: using PCBM as n-type material, the PCBM taking 5mg is dissolved in the chlorobenzene of 1ml, is stirred at room temperature
12h, is allowed to be sufficiently mixed, and under dark condition, on the most pretreated FTO transparent conducting glass, spin coating electronics passes
Defeated layer PCBM, spin coating parameters is 50ul, 4000rpm/20s, anneals 20 minutes at 70 DEG C, makes conduct after the solidification of PCBM material layer
Evaporation substrate is standby, sees Fig. 4 and Fig. 5；
(3) prepared by absorbent body layer: adopt the perovskite thin film of single step flash method growing large-size crystal grain as absorbent body layer, title
Take the PbI of certain mass ratio2And CH3NH3I, according to PbI2And CH3NH3The ratio that material mol ratio is 1:1 of I, is made into
CH3NH3PbI3Perovskite raw material powder mixture, by CH3NH3PbI3Perovskite raw material powder mixture has been dissolved in as solute
In machine solvent, be prepared as organic inorganic hybridization perovskite solution as single evaporation source, organic solvent use γ-
Butyrolactone (GBL), carries out pretreatment by evaporation of metal boat, and evaporation of metal boat uses molybdenum sheet to make, and uses flash method
Apparatus, to CH3NH3PbI3Perovskite solution is heated and stirred 12h at 50 DEG C, then by CH3NH3PbI3Solution liquid-transfering gun
It is applied on molybdenum sheet formation liquid film uniformly, then will coat CH3NH3PbI3Molybdenum sheet after solution liquid film inserts steaming method instrument dress
In the vaporization chamber put；Again the air pressure in vaporization chamber is evacuated to less than 5 × 10-3Pa, and continue to keep pumping speed to keep evaporation
The vacuum of room, the substrate after combining electron transfer layer PCBM in described step (2) puts into the sample of flash method apparatus
In sample platform, under conditions of underlayer temperature is room temperature, load the electric current being not less than 200A, by the perovskite material solution on molybdenum sheet
It is rapidly heated within the time less than 1 second to 1000 DEG C, makes the perovskite material solute moment in perovskite material solution distil,
Control evaporation process to be less than 5 seconds, by flash method, the perovskite material solute in perovskite material solution is deposited with on substrate
PCBM material layer on, i.e. on the layer electron transfer layer PCBM of substrate, the perovskite of the i type of growing large-size crystal grain is thin
Membrane layers, makes perovskite thin film material layer be combined with electron transfer layer as absorbent body layer, sees Fig. 2, Fig. 3, Fig. 4 and Tu
5；Seeing Fig. 1, in flash method apparatus, be labeled as 1, what the position of 2,3,4 was put is four sheet glass substrates, as accompanying sheet,
Observe intracavity diverse location film quality with this, wherein accompany sheet 1 to be in the position of underface distance 5cm of molybdenum sheet, accompany at sheet 2
In the position with 1 parallel distance 20cm, accompany sheet 3 with 4 all in height identical with substrate and the position of distance 20cm, accompany sheet 3
Upward, sheet 4 is accompanied to face down；
(4) prepared by hole transmission layer: Spiro-OMeTAD is as p-type material, at the perovskite that described step (3) prepares in employing
Spin coating Spiro-OMeTAD material layer on thin film, spin coating parameters is 25ul, 2000rpm/40s, places an evening in glove box,
As hole transmission layer after the solidification of Spiro-OMeTAD material layer, with and in described step (3) the absorbent body layer i type of preparation
Perovskite thin film material layer constitute p-i-n type plane together with the electron transfer layer n-type material layer of preparation in the step (2)
Photoelectric device, sees Fig. 4 and Fig. 5；
(5) use vacuum evaporation method, described step (4) utilizes on the hole transmission layer of preparation mask plate evaporation preparation tool
There is the gold electrode setting pattern form, thus prepare plane solar cell device, see Fig. 4 and Fig. 5.
The present embodiment experimental test and analysis:
See Fig. 6, by the organic inorganic hybridization plane solaode obtained by embodiment one method in the illumination of 1.5AM
Under the conditions of, this shorted devices electric current is up to 15.81mA/cm2, open-circuit voltage is 990 mV, and fill factor, curve factor is 0.64, and this thin film is too
The energy efficiency of sun energy battery is 10.01%.
Embodiment one uses perovskite material solution to do single evaporation source, adds to electric current rapidly be not less than 200A, is dodging
Steaming method primary response state is under vacuum condition, or under the atmospheric condition that the whole process of flash method is non-oxide reducing gas,
The temperature making perovskite material solution reaches politics and law temperature in the moment less than 1 second, makes the perovskite in perovskite material solution
Material moment distils, and utilizes flash method to be deposited with on substrate, i.e. by the perovskite material solute in perovskite material solution
Substrate is prepared the perovskite thin film of big crystallite dimension.
Embodiment two:
The present embodiment is essentially identical with embodiment one, is particular in that:
In the present embodiment, a kind of utilize perovskite thin film as the preparation side of the plane solaode of absorbent body layer
Method, comprises the following steps:
(1) substrate pre-treatment: substrate uses silicon chip, after first using RCA standard cleaning method to Wafer Cleaning, at 900 DEG C, is passed through dry
Dry oxygen carries out aoxidizing 10 minutes, aoxidizes out, at silicon chip surface, the silicon dioxide layer that a layer thickness is 83 nm, i.e. completes silicon chip pre-
Process；
(2) this step is identical with embodiment one；
(3) this step is identical with embodiment one；
(4) this step is identical with embodiment one；
(5) this step is identical with embodiment one.
The present embodiment is prepared for perovskite thin film equally as absorbent body layer, and completes plane solaode
Preparation.
Above in conjunction with accompanying drawing, the embodiment of the present invention is illustrated, but the invention is not restricted to above-described embodiment, it is also possible to
The purpose of the innovation and creation according to the present invention makes multiple change, under all spirit according to technical solution of the present invention and principle
The change made, modify, substitute, combine or simplify, all should be the substitute mode of equivalence, as long as meeting the goal of the invention of the present invention,
Perovskite thin film and the preparation of plane solaode without departing from single step flash method growing large-size crystal grain of the present invention
The know-why of method and inventive concept, broadly fall into protection scope of the present invention.
Claims (8)
1. the preparation method of the perovskite thin film of a single step flash method growing large-size crystal grain, it is characterised in that include following
Step:
A. perovskite material dispensing: the material powder that two kinds different is dissolved in organic solvent and is prepared as ABX3Type organic-inorganic
Hydridization perovskite solution, or the material powder that two kinds are different is mixed and made into ABX3Type organic inorganic hybridization perovskite powders,
The material powder that two of which is different is respectively AX powder and BX2Powder, wherein A is monovalence organic molecule group of making a comment or criticism, and B is
Positive divalent metal element, X is the halogen of negative one valency, when carrying out perovskite material dispensing, in the material powder of employing
AX powder and BX2The material mol ratio of powder is (1.0 ~ 3.0): 1, adjusts proportioning parameter according to different raw materials；
B. the perovskite thin film of single step flash method growing large-size crystal grain: use the ABX of preparation in described step a3Type is organic
Inorganic hybridization perovskite solution or ABX3Type organic inorganic hybridization perovskite powders does single evaporation source, is carried out by evaporation of metal boat
Pretreatment, uses flash method apparatus, is coated on evaporation of metal boat form liquid film by the transfer of perovskite solution, or by calcium
Titanium ore powder is laid on evaporation of metal boat formation powder bed uniformly, then the evaporation of metal boat after charging is inserted steaming method instrument
In the vaporization chamber of device device；Again the air pressure in vaporization chamber is evacuated to less than 5 × 10-3Pa, and continue to keep pumping speed to keep
The vacuum of vaporization chamber, or close vacuum pump and gas piping valve, and it is passed through noble gas or nitrogen makes vaporization chamber internal gas pressure
To 1-100Pa, when, after atmosphere pressure conditional stability in vaporization chamber, loading the electric current being not less than 200A, by evaporation of metal boat
Perovskite material solution or perovskite material powder were rapidly heated to 1000-1500 DEG C within the time less than 1 second, made perovskite
Perovskite material solute in material solution or the distillation of perovskite material powder moment, control evaporation process and be less than 5 seconds, by dodging
Steaming method, is deposited with the perovskite material solute in perovskite material solution or perovskite material powder on substrate, i.e. at substrate
On prepare the perovskite thin film of big crystallite dimension.
The preparation method of the perovskite thin film of single step flash method growing large-size crystal grain, its feature the most according to claim 1
Being: in described step a, when carrying out perovskite material dispensing, the AX powder in the material powder of employing is CH3NH3X, i.e.
A is the CH of positive monovalence3NH3Organic molecule group, the BX in the material powder of employing2Powder is PbX2, i.e. B is Pb metal
Element, X is I, Br or Cl element, prepared ABX3Type organic inorganic hybridization perovskite solution is CH3NH3PbX3Perovskite is molten
Liquid, or the ABX of preparation3Type organic inorganic hybridization perovskite powders is CH3NH3PbX3Perovskite powders.
The preparation method of the perovskite thin film of single step flash method growing large-size crystal grain the most according to claim 1 or claim 2, it is special
Levy and be: in described step a when carrying out perovskite material dispensing, by adjusting AX powder and BX2When powder mixes
Perovskite material proportioning raw materials, in described step b, finally prepare controlled and big crystallite dimension the perovskite of composition thin
Film.
The preparation method of the perovskite thin film of single step flash method growing large-size crystal grain, its feature the most according to claim 3
It is: in described step a, when carrying out perovskite material dispensing, the AX powder in the material powder of employing and BX2Powder
Material mol ratio is 2.0: 1.
The preparation method of the perovskite thin film of single step flash method growing large-size crystal grain the most according to claim 1 or claim 2, it is special
Levying and be: in described step b, when carrying out the perovskite thin film of flash method growing large-size crystal grain, evaporation of metal boat uses
Tantalum piece, molybdenum sheet or leaf are made.
The preparation method of the perovskite thin film of single step flash method growing large-size crystal grain the most according to claim 1 or claim 2, it is special
Levy and be: in described step a, AX powder and BX2Two kinds of different material powders of powder are dissolved in organic solvent preparation
Become ABX3When type organic inorganic hybridization perovskite is molten, the organic solvent of employing be N, N-Dimethylformamide (DMF) and
Any one or the most several mixture in γ-butyrolactone (GBL).
7. one kind utilizes the preparation method of the perovskite thin film of single step flash method growing large-size crystal grain described in claim 1 to prepare
Perovskite thin film as the preparation method of the plane solaode of absorbent body layer, it is characterised in that include following step
Rapid:
(1) substrate pre-treatment and prepare electron transfer layer: substrate uses transparent conducting glass substrate or silicon chip, carries out pre-to substrate
Processing, use PCBM as n-type material, then one layer of electron transfer layer PCBM of spin coating on substrate, as evaporation lining after solidification
The end, is standby, the preprocessing process that wherein substrate carried out particularly as follows:
When use transparent conducting glass substrate time, first use TritonX clean transparent conducting glass substrate surface, then spend from
Sub-water cleans, and is respectively adopted acetone, EtOH Sonicate cleaning 15 minutes afterwards, finally uses at UV ozone or microwave plasma
Reason transparent conducting glass substrate surface, i.e. completes transparent conducting glass substrate pre-treatment；When using silicon chip as substrate, first use
After RCA standard cleaning method is to Wafer Cleaning, at 900 DEG C, it is passed through dry oxygen and carries out aoxidizing 10 minutes, aoxidize at silicon chip surface
Go out the silicon dioxide layer that a layer thickness is 83 nm, i.e. complete silicon chip pretreatment；
(2) prepared by absorbent body layer: use the single step flash method of described step b, will combine electric transmission in described step (1)
Substrate after layer PCBM is put on the sample stage of flash method apparatus, grows on the layer electron transfer layer PCBM of substrate
The perovskite thin film material layer of the i type of large scale crystal grain, makes perovskite thin film material layer as absorbent body layer and electric transmission
Layer combines；
(3) prepared by hole transmission layer: Spiro-OMeTAD is as p-type material, at the perovskite that described step (2) prepares in employing
Spin coating Spiro-OMeTAD material layer on thin film, as hole transmission layer after solidification, with and in the described step (2) master of preparation
The perovskite thin film material layer of absorbing layer i type constitutes p-together with the electron transfer layer n-type material layer prepared in step (1)
I-n type planar photo device；
(4) use vacuum evaporation method, described step (3) is deposited with on the hole transmission layer of preparation preparation there is setting pattern
The gold electrode of shape or silver electrode, thus prepare plane solar cell device.
The preparation method of the perovskite thin film of single step flash method growing large-size crystal grain, its feature the most according to claim 7
It is: in described step (1), when substrate uses transparent conducting glass substrate, concrete employing FTO or ITO.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN109216547A (en) * | 2018-09-20 | 2019-01-15 | 西安交通大学 | A kind of preparation method of perovskite thin film and its preparation method of solar battery |
| CN110047998A (en) * | 2018-01-17 | 2019-07-23 | 杭州纤纳光电科技有限公司 | A kind of immersion prepares the equipment and application method of perovskite solar battery |
| CN111540836A (en) * | 2020-05-11 | 2020-08-14 | 北京工业大学 | Method for improving humidity stability of perovskite by changing surface terminal |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110047998A (en) * | 2018-01-17 | 2019-07-23 | 杭州纤纳光电科技有限公司 | A kind of immersion prepares the equipment and application method of perovskite solar battery |
| CN110047998B (en) * | 2018-01-17 | 2023-09-26 | 杭州纤纳光电科技有限公司 | Device for preparing perovskite solar cell in immersion mode and use method |
| CN108447996A (en) * | 2018-02-07 | 2018-08-24 | 友达光电股份有限公司 | Perovskite structure, electronic device using same, and method for manufacturing photoelectric conversion layer |
| CN108447996B (en) * | 2018-02-07 | 2022-06-28 | 友达光电股份有限公司 | Perovskite structure, electronic device using same, and method for manufacturing related photoelectric conversion layer |
| CN109216547A (en) * | 2018-09-20 | 2019-01-15 | 西安交通大学 | A kind of preparation method of perovskite thin film and its preparation method of solar battery |
| CN109216547B (en) * | 2018-09-20 | 2020-08-28 | 西安交通大学 | Preparation method of perovskite thin film and preparation method of solar cell thereof |
| CN111540836A (en) * | 2020-05-11 | 2020-08-14 | 北京工业大学 | Method for improving humidity stability of perovskite by changing surface terminal |
| CN111540836B (en) * | 2020-05-11 | 2023-10-10 | 北京工业大学 | Method for improving humidity stability of perovskite surface by changing terminal |
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