CN107887475A - Preparation method of tungsten oxide electron transfer layer and products thereof and application - Google Patents
Preparation method of tungsten oxide electron transfer layer and products thereof and application Download PDFInfo
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- CN107887475A CN107887475A CN201711168429.1A CN201711168429A CN107887475A CN 107887475 A CN107887475 A CN 107887475A CN 201711168429 A CN201711168429 A CN 201711168429A CN 107887475 A CN107887475 A CN 107887475A
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910001930 tungsten oxide Inorganic materials 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- 230000027756 respiratory electron transport chain Effects 0.000 title claims abstract description 32
- 238000004528 spin coating Methods 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000003756 stirring Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 230000001476 alcoholic effect Effects 0.000 claims abstract description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 6
- 229910003091 WCl6 Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 25
- 230000005540 biological transmission Effects 0.000 description 23
- 230000005611 electricity Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 7
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The present invention relates to preparation method of tungsten oxide electron transfer layer and products thereof and application, a kind of tungsten oxide electron transfer layer can be in high volume synthesized in electro-conductive glass substrate by WOx low temperature preparations, including：5ml alcoholic solutions are measured, a certain amount of tungsten hexachloride is weighed and is dissolved among solvent alcohol, stir to solution and be completely dissolved, obtain the solution of yellow；Continue to stir, yellow solution is changed into transparent light blue solution；Spin coating 30s on FTO electro-conductive glass after cleaning；Substrate after spin coating 150 degrees Centigrade in an oven；Repeat 2 ~ 4 times, obtain tungsten oxide electron transport layer materials of good performance.8.3% efficiency is obtained in electron transfer layer made from 150 °C.Electron transfer layer prepared by this method requires no the complex processes such as high temperature sintering, preparation method technique and simple flow, and Parameter adjustable scope is wide, and repeatability is strong, and consumed energy is low, significantly reduces the cost of manufacture of battery, is advantageous to the large-scale promotion of technology.
Description
Technical field
The present invention relates to a kind of preparation method of tungsten oxide electron transfer layer and products thereof and application, belong to inorganic nano material
Material and synthesis technical field.
Background technology
In solar cell research field, perovskite solar cell has huge as a kind of new solar cell
Application potential, photoelectric transformation efficiency from initial 4% till now 22%.Perovskite material has excellent combination property,
The absorption of incident light can be completed simultaneously, photo-generated carrier such as excites, transported, separating at multiple processes, extinction coefficient is high and band
Gap width is suitable, being capable of simultaneous transmission electronics and hole.Perovskite solar battery structure is simple, can low temperature in a mild condition
Prepare.
The carrier that electron transfer layer is made as separation of charge and transmission, it is the key component and opto-electronic conversion of solar cell
Basis, its performance directly affect and determined the efficiency of solar cell.The carrier transport speed of electron transfer layer how is improved, is subtracted
The compound of few electron-hole pair is to improve one of the total photoelectric transformation efficiency of solar cell and practical key technology.
In whole conversion process of energy, overriding concern is light absorbs and carrier mobility problem.No matter which kind of material
Material the diffusion transport of carrier all be present with interfacial reaction process, it is necessary to which material has macropore, porous, high surface and height electricity
Transport factor.Therefore have to constantly find and develop new material, pass through the control of different component, different structure and surface nature
System, realizes the material of high-specific surface area and high carrier transport and the preparation of structure, realizes the Efficient Conversion of solar cell.As
One of core of perovskite solar cell, electron transport material are usually TiO2、ZnO、SnO2、Nb2O5、WO3、CeO2Etc. nothing
Machine semi-conducting material, in these materials, TiO2With ZnO as a kind of environment amenable optical function material, property is stable, nothing
Poison is harmless, and technological process is simple in actual applications, and operating condition is easily controlled, non-secondary pollution, rapidly becomes in recent years excellent
Different solar cell material.Generally conventional TiO2The high annealing temperature that electron transfer layer usually requires 500 degrees centigrades is come
Organic template and additive are eliminated, but annealing causes high manufacturing cost, high temperature sintering energy consumption is big, complex process, no
Beneficial to the large-scale commercial application of perovskite solar cell, high-sintering process also counteracts that perovskite solar cell exists
Application in flexible substrates.Therefore in order to lift preparation flow, it should be prepared that the electron transfer layer of low temperature substitutes, so as to after
Flexible perovskite solar cell is prepared on the plastic substrate.
Using preparation method of the nano materials such as WOx as perovskite battery compacted zone, report at present less.Being of WOx
Stable semiconductor, band gap are wide on（2-3eV）, electron mobility height（10-20cm2V-1s-1）, and with than TiO2It is higher
Mobility.
The content of the invention
For overcome the deficiencies in the prior art, present invention aims at：A kind of preparation side of tungsten oxide electron transfer layer is provided
Method.
Another object of the present invention is：Product prepared by the above method is provided.
A further object of the present invention is：The application of the said goods is provided.
The object of the invention is realized by following proposal：A kind of preparation method of tungsten oxide electron transfer layer, the electric transmission
Layer is by WOx low temperature preparations, can in high volume be synthesized in electro-conductive glass substrate；Comprise the technical steps that：
（1）5ml alcoholic solutions are measured, a certain amount of tungsten hexachloride is weighed and is dissolved among solvent alcohol, stir to solution and be completely dissolved, obtain
The solution of yellow；
（2）Continue to stir, yellow solution is changed into transparent light blue solution；
（3）Spin coating 30s on FTO electro-conductive glass after cleaning；
（4）Substrate after spin coating 150 degrees Centigrade in an oven；
（5）, will be above-mentioned in order to obtain preferable film quality（3）（4）Step repeats 2 ~ 4 times, obtains tungsten oxide of good performance
Electron transport layer materials.
On the basis of such scheme, step（1）Described in solvent for normal propyl alcohol, isopropanol, n-butanol；WCl6Solution
Concentration is 0.01 ~ 0.1 mol/L.
Step（3）Described in spin speed be 2500 ~ 3500rmp.
Step（4）Described in heat time be 10 ~ 25 minutes.
The present invention provides a kind of tungsten oxide electron transfer layer, is prepared according to any of the above-described methods described.
The present invention provides a kind of application of tungsten oxide electron transfer layer as perovskite solar cell electron transfer layer.
The tungsten oxide film obtained by above-mentioned preparation method, its crystal formation and standard powder diffraction card (JCPDS: 36-
1451) match.Pattern is homogeneous, and purity is high, and stability is strong, can in high volume synthesize, and can be widely applied to perovskite battery etc.
Field, spin coating calcium titanium ore bed, hole transmission layer Spiro-OMeTAD on the basis of the electron transfer layer of preparation, and electrode evaporation
Layer Au, the perovskite solar cell of preparation obtain 8.3% efficiency of transmission.
Electron transfer layer prepared by this method is made up of tungsten oxide, and tungsten oxide electron transfer layer requires no high temperature sintering
Etc. complex process, can preparing at low temperature, the preparation method technique and simple flow, Parameter adjustable scope is wide, and repeatability is strong,
Be advantageous to the large-scale promotion of technology, consumed energy is low, significantly reduces the cost of manufacture of battery, is before one kind possesses business
The preparation method of scape.
Brief description of the drawings
Fig. 1：The X-ray powder diffraction pattern of tungsten oxide as made from embodiment 2；
Fig. 2：The low power stereoscan photograph of the tungsten oxide film as made from embodiment 2；
Fig. 3：The high power stereoscan photograph of the tungsten oxide film as made from embodiment 2；
Fig. 4：The AFM plans of the tungsten oxide film as made from embodiment 2；
Fig. 5：The AFM stereograms of the tungsten oxide film as made from embodiment 2；
Fig. 6：The UV-Visible absorption curve of the tungsten oxide film as made from embodiment 2 and perovskite thin film；
Fig. 7：Perovskite solar battery structure schematic diagram；
Fig. 8：The I-V curve of perovskite solar cell as made from embodiment 2.
Embodiment
Below by embodiment, the present invention is further elaborated.It will be understood to those of skill in the art that following examples
Only the preferred embodiments of the present invention, its purpose, which is only that, is best understood from present disclosure.Therefore, the cited case is not intended to limit
Protection scope of the present invention.
With reference to instantiation, the present invention will be further described.
Embodiment 1
（1）5ml normal propyl alcohol solution is measured, weighs 0.5g tungsten hexachlorides, tungsten hexachloride is dissolved among normal propyl alcohol, is obtained solubility and is
0.1g/ml, stir to being completely dissolved, obtain the solution of yellow；
（2）Continue to stir, yellow solution is changed into transparent light blue solution；
（3）With 3000rmp speed spin coating 30s on FTO electro-conductive glass after cleaning；
（4）Substrate after spin coating 150 degrees Centigrade 15 minutes in an oven；
（5）, will be above-mentioned in order to obtain preferable film quality（3）（4）Step repeats 3 times, obtains the tungsten oxide electricity of stable performance
Son transmission layer material；
The tungsten oxide film obtained by above-mentioned preparation method, its crystal formation and standard powder diffraction card (JCPDS: 36-1451)
Match.Spin coating calcium titanium ore bed, hole transmission layer Spiro-OMeTAD on the basis of the electron transfer layer of preparation, and electricity is deposited
Pole layer Au, the perovskite solar cell of preparation obtain 7.8% efficiency of transmission.
Embodiment 2
（1）5ml aqueous isopropanols are measured, weigh 0.25g tungsten hexachlorides, tungsten hexachloride is dissolved among isopropanol, is obtained solubility and is
0.05g/ml, stir to being completely dissolved, obtain the solution of yellow；
（2）Continue to stir, yellow solution is changed into transparent light blue solution；
（3）With 2500rmp speed spin coating 40s on FTO electro-conductive glass after cleaning；
（4）Substrate after spin coating 150 degrees Centigrade 25 minutes in an oven；
（5）, will be above-mentioned in order to obtain preferable film quality（3）（4）Step repeats 3 times, obtains the tungsten oxide electricity of stable performance
Son transmission layer material；
The tungsten oxide film obtained by above-mentioned preparation method, its crystal formation and standard powder diffraction card (JCPDS: 36-1451)
Match.Spin coating calcium titanium ore bed, hole transmission layer Spiro-OMeTAD on the basis of the electron transfer layer of preparation, and electricity is deposited
Pole layer Au, the perovskite solar cell of preparation obtain 8.3% efficiency of transmission.X-ray powder such as Fig. 1 tungsten oxide spreads out
Penetrate collection of illustrative plates, Fig. 2 low power stereoscan photograph of tungsten oxide film, Fig. 3 tungsten oxide film high power stereoscan photograph, figure
The tungsten oxide film and perovskite of the AFM plans of 4 tungsten oxide film, the AFM stereograms of Fig. 5 tungsten oxide film and Fig. 6
Shown in the UV-Visible absorption curve of film.
Perovskite solar battery structure such as Fig. 7, I-V curve such as Fig. 8 of the perovskite solar cell.
Embodiment 3
（1）5ml butanol solutions are measured, weigh 0.5g tungsten hexachlorides, tungsten hexachloride is dissolved among n-butanol, is obtained solubility and is
0.1g/ml, stir to being completely dissolved, obtain the solution of yellow；
（2）Continue to stir, yellow solution is changed into transparent light blue solution；
（3）With 3500rmp speed spin coating 30s on FTO electro-conductive glass after cleaning；
（4）Substrate after spin coating 150 degrees Centigrade 20 minutes in an oven；
（5）, will be above-mentioned in order to obtain preferable film quality（3）（4）Step repeats 3 times, obtains the tungsten oxide electricity of stable performance
Son transmission layer material；
The tungsten oxide film obtained by above-mentioned preparation method, its crystal formation and standard powder diffraction card (JCPDS: 36-1451)
Match.Spin coating calcium titanium ore bed, hole transmission layer Spiro-OMeTAD on the basis of the electron transfer layer of preparation, and electricity is deposited
Pole layer Au, the perovskite solar cell of preparation obtain 6.7% efficiency of transmission.
Embodiment 4
（1）5ml aqueous isopropanols are measured, weigh 0.25g tungsten hexachlorides, tungsten hexachloride is dissolved among isopropanol, is obtained solubility and is
0.05g/ml, stir to being completely dissolved, obtain the solution of yellow；
（2）Continue to stir, yellow solution is changed into transparent light blue solution；
（3）With 3500rmp speed spin coating 25s on FTO electro-conductive glass after cleaning；
（4）Substrate after spin coating 150 degrees Centigrade 15 minutes in an oven；
（5）, will be above-mentioned in order to obtain preferable film quality（3）（4）Step repeats 2 times, obtains the tungsten oxide electricity of stable performance
Son transmission layer material；
The tungsten oxide film obtained by above-mentioned preparation method, its crystal formation and standard powder diffraction card (JCPDS: 36-1451)
Match.Spin coating calcium titanium ore bed, hole transmission layer Spiro-OMeTAD on the basis of the electron transfer layer of preparation, and electricity is deposited
Pole layer Au, the perovskite solar cell of preparation obtain 7.7% efficiency of transmission.
Embodiment 5
（1）5ml normal propyl alcohol solution is measured, weighs 0.25g tungsten hexachlorides, tungsten hexachloride is dissolved among normal propyl alcohol, is obtained solubility and is
0.05g/ml, stir to being completely dissolved, obtain the solution of yellow；
（2）Continue to stir, yellow solution is changed into transparent light blue solution；
（3）With 3000rmp speed spin coating 20s on FTO electro-conductive glass after cleaning；
（4）Substrate after spin coating 150 degrees Centigrade 15 minutes in an oven；
（5）, will be above-mentioned in order to obtain preferable film quality（3）（4）Step repeats 4 times, obtains the tungsten oxide electricity of stable performance
Son transmission layer material；
The tungsten oxide film obtained by above-mentioned preparation method, its crystal formation and standard powder diffraction card (JCPDS: 36-1451)
Match.Spin coating calcium titanium ore bed, hole transmission layer Spiro-OMeTAD on the basis of the electron transfer layer of preparation, and electricity is deposited
Pole layer Au, the perovskite solar cell of preparation obtain 7.4% efficiency of transmission.
Embodiment 6
5ml butanol solutions, 0.25g tungsten hexachlorides are weighed, tungsten hexachloride is dissolved among n-butanol, and it is 0.05g/ to obtain solubility
Ml, stir to being completely dissolved, obtain the solution of yellow；
（1）Continue to stir, yellow solution is changed into transparent light blue solution；
（2）With 4000rmp speed spin coating 20s on FTO electro-conductive glass after cleaning；
（3）Substrate after spin coating 150 degrees Centigrade 10 minutes in an oven；
（4）, will be above-mentioned in order to obtain preferable film quality（3）（4）Step repeats 3 times, obtains the tungsten oxide electricity of stable performance
Son transmission layer material；
The tungsten oxide film obtained by above-mentioned preparation method, its crystal formation and standard powder diffraction card (JCPDS: 36-1451)
Match.Spin coating calcium titanium ore bed, hole transmission layer Spiro-OMeTAD on the basis of the electron transfer layer of preparation, and electricity is deposited
Pole layer Au, the perovskite solar cell of preparation obtain 6.1% efficiency of transmission.
Claims (6)
- A kind of 1. preparation method of tungsten oxide electron transfer layer, it is characterised in that：, can be in electro-conductive glass base by WOx low temperature preparations In high volume synthesized on bottom；Comprise the technical steps that：（1）5ml alcoholic solutions are measured, a certain amount of tungsten hexachloride is weighed and is dissolved among solvent alcohol, stir to solution and be completely dissolved, obtain The solution of yellow；（2）Continue to stir, yellow solution is changed into transparent light blue solution；（3）Spin coating 30s on FTO electro-conductive glass after cleaning；（4）Substrate after spin coating 150 degrees Centigrade in an oven；（5）Will be above-mentioned（3）（4）Step repeats 2 ~ 4 times, obtains tungsten oxide electron transport layer materials of good performance.
- 2. according to the preparation method of tungsten oxide electron transfer layer described in claims 1, it is characterised in that：Step（1）Described in Solvent be normal propyl alcohol, isopropanol or n-butanol；WCl6The concentration of solution is 0.01 ~ 0.1 mol/L.
- 3. according to the preparation method of tungsten oxide electron transfer layer described in claims 1, it is characterised in that：Step（3）Described in Spin speed be 2500 ~ 3500rmp.
- 4. according to the preparation method of tungsten oxide electron transfer layer described in claims 1, it is characterised in that：Step（4）Described in Heat time be 10 ~ 25 minutes.
- 5. a kind of tungsten oxide electron transfer layer, it is characterised in that be prepared according to any methods describeds of claim 1-4.
- 6. a kind of electron transfer layer of tungsten oxide according to claim 5 should as perovskite solar cell electron transfer layer With.
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Cited By (4)
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| CN110299453A (en) * | 2019-07-01 | 2019-10-01 | 上海第二工业大学 | A kind of tungsten oxide electron transfer layer, preparation method and its application in perovskite solar battery |
| CN111261787A (en) * | 2018-11-30 | 2020-06-09 | 中国科学院大连化学物理研究所 | Perovskite battery based on tungsten oxide and preparation method thereof |
| CN114823945A (en) * | 2022-04-27 | 2022-07-29 | 东北大学秦皇岛分校 | Detector structure of metal/titanium doped tungsten oxide Schottky junction and preparation method thereof |
| RU2786055C2 (en) * | 2021-02-18 | 2022-12-16 | Федеральное Государственное Бюджетное Учреждение Науки Федеральный Исследовательский Центр Проблем Химической Физики И Медицинской Химии Российской Академии Наук (Фиц Пхф И Мх Ран) | Photovoltaic device with electron-selective layer based on tungsten oxide and method for manufacture of this device |
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| CN110299453A (en) * | 2019-07-01 | 2019-10-01 | 上海第二工业大学 | A kind of tungsten oxide electron transfer layer, preparation method and its application in perovskite solar battery |
| RU2786055C2 (en) * | 2021-02-18 | 2022-12-16 | Федеральное Государственное Бюджетное Учреждение Науки Федеральный Исследовательский Центр Проблем Химической Физики И Медицинской Химии Российской Академии Наук (Фиц Пхф И Мх Ран) | Photovoltaic device with electron-selective layer based on tungsten oxide and method for manufacture of this device |
| CN114823945A (en) * | 2022-04-27 | 2022-07-29 | 东北大学秦皇岛分校 | Detector structure of metal/titanium doped tungsten oxide Schottky junction and preparation method thereof |
| CN114823945B (en) * | 2022-04-27 | 2024-04-09 | 东北大学秦皇岛分校 | Detector structure of metal/titanium doped tungsten oxide Schottky junction and preparation method |
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