CN102544230A - Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film - Google Patents
Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film Download PDFInfo
- Publication number
- CN102544230A CN102544230A CN2012100399239A CN201210039923A CN102544230A CN 102544230 A CN102544230 A CN 102544230A CN 2012100399239 A CN2012100399239 A CN 2012100399239A CN 201210039923 A CN201210039923 A CN 201210039923A CN 102544230 A CN102544230 A CN 102544230A
- Authority
- CN
- China
- Prior art keywords
- film
- czt
- sublimation
- energy
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for producing a cadmium (Cd1)-x zinc (Zn) x tellurium (Te) (CZT) film, which belongs to the field of an inorganic nonmetal material device manufacturing technology. The method for producing the CZT film adopts a Cdl-xZnxTe polycrystal or monocrystal disc which is doped with a small amount of Zn (x is smaller than 1%) as a sublimation source, and uses a close-spaced-sublimation method to directly produce the x (50%) Cdl-xZnxTe film. The CZT film is adopted to produce a top absorbing layer of a laminated solar battery, so the development of the solar battery which is low in cost and has high conversion efficiency is benefited, and meanwhile, the CdZnTe film also can be applied to a high energy particle detector.
Description
Technical field
The present invention relates to a kind of Cd of the variable energy gap of growing
1-xZn
xThe method of Te film belongs to the fabricating parts in inorganic non-metal field.
Background technology
The energy is the important substance basis that human civilization is rely and developed.The world today, along with reducing day by day and human continuous increase to energy demand of earth resource, energy crisis is extremely urgent.For survival and development, the mankind must seek to substitute the reproducible clean new forms of energy of conventional energy resource, wherein first-selected solar power generation.Solar energy has and stores hugely, never exhausted, cleanliness without any pollution, does not receive advantage such as region restriction, is human most important new forms of energy.Utilize the photovoltaic effect of solar cell to generate electricity, become the most important mode that the solar energy scale is utilized.
At present solar cell mainly comprises crystal silicon cell and thin-film solar cells, good output under the thin-film solar cells Yin Gaowen wherein, and weaknesses is good; Pollute few; Help environmental protection, energy output is high, and plasticity is good; The production materials are few, and advantages such as low price become the development trend of solar-energy photo-voltaic cell.But the conversion efficiency of current film battery assembly is also lower, and the laboratory peak efficiency of wherein the highest CIGS (CIGS) battery is 19.9% and efficient that volume production is gone up in industry just 13.1%.In order further to improve the efficient of this thin-film solar cells, can realize through the binode laminated cell.Promptly let the short light of wavelength absorbed by the wide gap material battery of top layer, the long energy transmissive of wavelength enters to let than the utilization of low energy gap width material cell, thereby to greatest extent luminous energy is become electric energy, improves conversion efficiency.Think that in the world using energy gap is the bottom cell that the CIGS material of 0.9 eV is done lamination solar cell, and the energy gap of corresponding top cell ideal material should be for about 1.6eV.To this, everybody broad research mainly be Cd
1-xZn
xTe (CZT) film, its energy gap can be adjustable continuously between 1.45 (CdTe)～2.26eV (ZnTe) with not coexisting of Zn content.And the CdZnTe film of mixing Zn10% (at.%) also can be done Detector for High Energy Particles.At present; Mainly adopt the near space sublimed method to prepare the CdTe film in the world then with the magnetically controlled sputter method ZnTe film of on the CdTe film, growing; Then film is annealed; Like this at the CZT of generation at the interface of CdTe/ZnTe film, the technology more complicated of this method growth CdZnTe film, and also Zn content is not easy control in the CZT film.Also there is research group to adopt Cd
1-xZn
xThe Te powder is attempted the Cd that grows for the near space sublimation source
1-xZn
xThe Te film adopts x to be 0.7 Cd to the maximum even discover
1-xZn
xThe Te source also can't grow x greater than 0.1 Cd
1-xZn
xThe Te film.Therefore the present invention proposes to adopt the Cd that mixes a small amount of Zn (x is less than 1%)
1-xZn
xTe polycrystalline or monocrystalline disk are done sublimation source, under high vacuum, directly prepare x with the near space sublimed method<50% Cd
1-xZn
xThe Te film.
Summary of the invention
Content of the present invention is to adopt CdZnTe polycrystalline or the monocrystalline disk of mixing a small amount of Zn4% (at.%) to do sublimation source; Directly prepare the absorbed layer of CZT film with the near space sublimed method as solar cell; Along with Zn content in the CZT film of the variation of underlayer temperature growth can change; Thereby the CZT film that can prepare different energy gaps, this can provide a kind of new material and new technology for the thin-film solar cells of preparation high conversion efficiency.
The present invention is characterized in the CZT film that obtains among the present invention, the CZT film that adopts better simply prepared to go out the higher different energy gaps of Zn ratio is done the absorbed layer of solar cell.
For achieving the above object, the present invention adopts following technical proposals and step:
With transparent conducting glass (SnO
2: F) put on the sample stage of near space distillation depositing device, deposit the CZT film in the above; Earlier sublimation chamber is evacuated to 5Pa before the deposit film with vacuum pump; Sublimation source is for mixing the CdZnTe crystal disk of Zn 4% (at.%); 650 ° of C of sublimation source temperature, 300～500 ° of C of sample substrate temperature, cavity air pressure is 1 Pa～10KPa; The distillation time is 30 minutes, can realize that finally x is the Cd of 5%-50%
1-xZn
xThe controllable deposition of Te film.
The present invention compares with prior art, has following remarkable advantage:
(1) CZT thin-film solar cells of the present invention; Employing is mixed CdZnTe polycrystalline or the monocrystalline crystal disk of Zn 4% (at.%) as sublimation source; Easy to operate with our homemade CdZnTe crystal list source growth CZT thin-film technique, only need regulate just can the grow CZT film of change energy gap of underlayer temperature.
(2) change the sample substrate temperature from 300 ° of C to 500 ° of C; Make Zn doping from 8.5% to 45.8% (at.%) in the film; Can generate energy gap 1.5eV and change to the CZT film about 1.7eV, and the less Cd of Zn is mixed in the use of present international research institution
1-xZn
xThe Te powder is done sublimation source, is difficult to prepare Zn content greater than 10% CZT film.The CZT film of the high Zn content that we prepare is fit to do the top layer absorbed layer of laminated cell very much, thereby improves the photoelectric conversion efficiency of CIGS/CZT overlapping thin film solar battery.This process also can be applicable to film CdZnTe Detector for High Energy Particles simultaneously.
Description of drawings
Fig. 1: the CZT film X-ray diffractogram for preparing under the various substrate.
Fig. 2: 300 ℃ of the scanning electron microscope diagrams (a) of the CZT film for preparing under the various substrate, (b) 400 ℃, (c) 450 ℃, (d) 500 ℃.
Embodiment
After instance of the present invention specifically being described at present.
Embodiment 1:
With transparent conducting glass (SnO
2: F) put on the sample stage of near space distillation depositing device, deposit the CZT film in the above; Earlier with vacuum pump sublimation chamber is evacuated to 5Pa before the deposit film, sublimation source is to mix the Cd of a small amount of Zn
1-xZn
xTe monocrystalline disk, x=4% wherein, 650 ° of C of source temperature, 500 ° of C of sample substrate temperature, cavity air pressure is 10Pa, the distillation time is 30 minutes.Calculate through measuring, the energy gap of this film is 1.7eV.
Embodiment 2:
With transparent conducting glass (SnO
2: F) put on the sample stage of near space distillation depositing device, deposit the CZT film in the above; Earlier with vacuum pump sublimation chamber is evacuated to 5Pa before the deposit film, sublimation source is to mix the Cd of a small amount of Zn
1-xZn
xTe monocrystalline disk, x=4% wherein, 650 ° of C of source temperature, 450 ° of C of sample substrate temperature, cavity air pressure is 10Pa, the distillation time is 30 minutes.Calculate through measuring, the energy gap of this film is 1.6eV.
Embodiment 3:
With transparent conducting glass (SnO
2: F) put on the sample stage of near space distillation depositing device, deposit the CZT film in the above; Earlier with vacuum pump sublimation chamber is evacuated to 5Pa before the deposit film, sublimation source is to mix the Cd of a small amount of Zn
1-xZn
xTe monocrystalline disk, x=4% wherein, 650 ° of C of source temperature, 400 ° of C of sample substrate temperature, cavity air pressure is 10Pa, the distillation time is 30 minutes.Calculate through measuring, the energy gap of this film is 1.53eV.
Embodiment 4:
With transparent conducting glass (SnO
2: F) put on the sample stage of near space distillation depositing device, deposit the CZT film in the above; Earlier with vacuum pump sublimation chamber is evacuated to 5Pa before the deposit film, sublimation source is to mix the Cd of a small amount of Zn
1-xZn
xTe monocrystalline disk, x=4% wherein, 650 ° of C of source temperature, 300 ° of C of sample substrate temperature, cavity air pressure is 10Pa, the distillation time is 30 minutes.Calculate through measuring, the energy gap of this film is 1.5eV.
Table 1: the Zn content and the energy gap of the CZT film for preparing under the various substrate
| Underlayer temperature (℃) | 300 | 400 | 450 | 500 |
| X value (%) | 8.51 | 13.64 | 26.62 | 45.8 |
| Energy gap (eV) | 1.5 | 1.53 | 1.6 | 1.7 |
Claims (1)
- One kind the growth variable energy gap Cd 1-xZn xThe method of Te film, this method has following technical process:With transparent conducting glass SnO 2: F puts on the sample stage of near space distillation depositing device, deposits Cd in the above 1-xZn xThe Te film; Earlier sublimation chamber is evacuated to 5Pa before the deposit film with vacuum pump; The Cd of a small amount of Zn is mixed in employing 1-xZn xTe polycrystalline or monocrystalline disk are done sublimation source, x=4% wherein, and 550-650 ° of C of sublimation source temperature, 300～500 ° of C of sample substrate temperature, cavity air pressure is lower than 10 Pa, and the distillation time is 30 minutes, can realize that finally x is the Cd of 5%-50% 1-xZn xThe controllable deposition of Te film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100399239A CN102544230A (en) | 2012-02-22 | 2012-02-22 | Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100399239A CN102544230A (en) | 2012-02-22 | 2012-02-22 | Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102544230A true CN102544230A (en) | 2012-07-04 |
Family
ID=46350672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100399239A Pending CN102544230A (en) | 2012-02-22 | 2012-02-22 | Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102544230A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343389A (en) * | 2013-07-05 | 2013-10-09 | 上海大学 | Preparation method for CdZnTe film with cylindrical structure |
| CN104952977A (en) * | 2015-05-15 | 2015-09-30 | 欧贝黎新能源科技股份有限公司 | Manufacturing method of inorganic thin film solar cell |
| CN105161565A (en) * | 2015-06-29 | 2015-12-16 | 上海大学 | CdZnTe photoelectric detector comprising graphene transition layer, and preparation method for CdZnTe photoelectric detector |
| CN108456847A (en) * | 2015-09-14 | 2018-08-28 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detectors on polycrystalline CZT |
| CN110148627A (en) * | 2019-04-28 | 2019-08-20 | 上海大学 | CZT film composite material and preparation method thereof with metal buffer layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234765A (en) * | 2010-04-23 | 2011-11-09 | 昆明物理研究所 | Preparation method of target material for growing tellurium cadmium mercury film |
-
2012
- 2012-02-22 CN CN2012100399239A patent/CN102544230A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234765A (en) * | 2010-04-23 | 2011-11-09 | 昆明物理研究所 | Preparation method of target material for growing tellurium cadmium mercury film |
Non-Patent Citations (1)
| Title |
|---|
| 袁研研等: "CSS法制备CdZnTe薄膜时衬底温度的影响规律", 《功能材料》, vol. 42, no. 5, 31 October 2011 (2011-10-31), pages 890 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343389A (en) * | 2013-07-05 | 2013-10-09 | 上海大学 | Preparation method for CdZnTe film with cylindrical structure |
| CN104952977A (en) * | 2015-05-15 | 2015-09-30 | 欧贝黎新能源科技股份有限公司 | Manufacturing method of inorganic thin film solar cell |
| CN105161565A (en) * | 2015-06-29 | 2015-12-16 | 上海大学 | CdZnTe photoelectric detector comprising graphene transition layer, and preparation method for CdZnTe photoelectric detector |
| CN108456847A (en) * | 2015-09-14 | 2018-08-28 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detectors on polycrystalline CZT |
| CN108456847B (en) * | 2015-09-14 | 2019-11-01 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detector on polycrystalline CZT |
| CN110148627A (en) * | 2019-04-28 | 2019-08-20 | 上海大学 | CZT film composite material and preparation method thereof with metal buffer layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102569442B (en) | Thin film solar cell and manufacturing method thereof | |
| CN102306666B (en) | Copper indium gallium selenium (CIGS) solar battery with gradient energy band and preparation method thereof | |
| CN102074590B (en) | Back-contact electrode in cadmium telluride diaphragm solar battery structure and preparation method | |
| CN102779864B (en) | Cadmium telluride thin-film battery and manufacturing method thereof | |
| CN103999229A (en) | Method for manufacturing czts based thin film having dual band gap slope, method for manufacturing czts based solar cell having dual band gap slope and czts based solar cell thereof | |
| CN101840942A (en) | Thin-film solar cell and manufacturing method thereof | |
| CN101127371A (en) | A nano structure thin film solar battery and its making method | |
| CN102544230A (en) | Method for growing variable forbidden bandwidth cadmium (Cd1)-x zinc (Zn) x tellurium (Te) film | |
| CN101882652A (en) | Preparation process of amorphous silicon film solar battery based on laser etched and crystallized optical film layer | |
| CN106206249B (en) | Topological insulator thin film with photovoltaic characteristic and preparation method thereof | |
| CN102157617B (en) | Preparation method of silicon-based nano-wire solar cell | |
| CN103219413A (en) | Grapheme radial heterojunction solar cell and preparation method thereof | |
| CN102983215A (en) | Method for preparing silicon thin-film solar cells with silicon nano-wire structures | |
| CN102437237A (en) | Chalcopyrite type thin film solar cell and manufacturing method thereof | |
| CN101882653B (en) | Preparation method of solar battery based on nano CdS (Cadmium Sulfide) film | |
| CN102031565B (en) | Polycrystal material with sulvanite structure and application thereof | |
| CN105552166A (en) | Method for preparing copper-indium-diselenide photoelectric film by two-step method of nitrate system | |
| CN105489672A (en) | Method for preparing copper indium diselenide photoelectric thin film by chloride system through two-step method | |
| CN202601694U (en) | Three-node laminated film solar battery module | |
| CN102024858B (en) | Ink, thin film solar cell and manufacturing methods thereof | |
| CN101707219B (en) | Solar cell with intrinsic isolation structure and production method thereof | |
| CN102005487B (en) | Light absorption layer material for flexible thin film solar cell and preparation method thereof | |
| CN101719521A (en) | Solar cell of sandwich structure consisting of Si/FeSi2/Si and manufacturing method thereof | |
| CN103305793B (en) | A kind of method preparing buffer layer oxides target and sull thereof | |
| CN102185001B (en) | Structure and manufacturing of silicon-based nanometer zinc oxide powder thin film hetero-junction solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |