CN105161565A - CdZnTe photoelectric detector comprising graphene transition layer, and preparation method for CdZnTe photoelectric detector - Google Patents
CdZnTe photoelectric detector comprising graphene transition layer, and preparation method for CdZnTe photoelectric detector Download PDFInfo
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- 229910004611 CdZnTe Inorganic materials 0.000 title claims abstract description 124
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 59
- 230000007704 transition Effects 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 22
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- 239000013078 crystal Substances 0.000 claims abstract description 5
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- 239000010931 gold Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 37
- 230000008022 sublimation Effects 0.000 claims description 21
- 238000000859 sublimation Methods 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 239000003708 ampul Substances 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
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- 238000002203 pretreatment Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 2
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- 239000007772 electrode material Substances 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 239000000686 essence Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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Abstract
The invention discloses a CdZnTe photoelectric detector comprising a graphene transition layer, and a preparation method for the CdZnTe photoelectric detector. Based on a close-space sublimation method, the Br_2-methanol corrosion of a deposited CdZnTe film is carried out, and then the technology of spin coating is employed for manufacturing the graphene transition layer between a CdZnTe and an Au electrode, thereby obtaining the CdZnTe photoelectric detector. The graphene transition layer is added into the CdZnTe photoelectric detector, thereby forming a novel CdZnTe photoelectric detector structure. The new structure effectively prevents the CdZnTe surface from being affected by the environment, eliminates the impurities and defects on the CdZnTe surface, improves the crystal quality of the CdZnTe, remarkably improves the interface contact between the CdZnTe and the Au electrode, obtains better ohmic contact, reduces the dark current of a device, and improves the sensitivity and photoelectric response of the device. The method is simple in technology, is lower in cost, is high in repeatability, and enlarges the application range of the CdZnTe in the photoelectric detector.
Description
Technical field
The present invention relates to a kind of photodetector and preparation method thereof, particularly relate to a kind of CdZnTe photodetector and preparation method thereof, be applied to photoelectric detection equipment and technical field of composite preparation.
Background technology
CdZnTe material is II-VI compound semiconductor materials of great potential, compare traditional silicon, germanium, GaAs, CdZnTe has larger energy gap and atomic number, and can at room temperature work, in addition, the energy gap of this kind of material can along with the change of Zn component be in 1.45eV ~ 2.26eV change, and this material also has the feature of high resistivity simultaneously, and this makes the device made with CdZnTe material can have less leakage current.The feature of these excellences makes CdZnTe film be suitable for the preparation of detector, and at environmental monitoring, nuclear medicine, industrial nondestructive testing, safety inspection, space science, nuclear weapon, prominent anti-and other nuclear technology field has broad application prospects.Compared to CdZnTe crystal counter, the technology of preparing of CdZnTe film is simpler, and cost is lower, easily produces by batch.
The surface appearance of CdZnTe film, electrode process are the key factors affecting CdZnTe photoelectric properties.At present, for the CdZnTe material of high resistant, be difficult to obtain good ohmic contact or accurate ohmic contact.In recent years, Au, Al, Ti, Pt/Au, Cr/Au by as electrode material to obtain the good contact between metal and CdZnTe.In these electrode materials, Au with Pt shows relative ohmic contact characteristic preferably, but the interracial contact problem between they and CdZnTe still has to be solved.Total institute is known, Graphene has unique electricity, optics and mechanical performance, it is a kind of electrode material of excellent performance, be widely used in the devices such as LED, solar cell, ultracapacitor, but there is not yet up to now and Graphene to be contacted the report of functional layer as intensifier electrode material with the interfacial conductive between CdZnTe or document is recorded.
Summary of the invention
In order to solve prior art problem, the object of the invention is to the deficiency overcoming prior art existence, a kind of CdZnTe photodetector containing Graphene transition zone and preparation method thereof is provided, in CdZnTe photodetector, increase Graphene transition zone form a kind of novel photodetector structure, effectively avoid CdZnTe surface by the impact of environment, remove the defect struchures on CdZnTe surface, improve the crystalline quality of CdZnTe, the obvious interracial contact improved between CdZnTe and Au electrode, obtain better ohmic contact, thus reduce the dark current of device, improve sensitivity and the photoelectric respone of device.Device preparation method of the present invention has that technique is simple, lower, the repeatable high of cost, provides new scheme, expand the range of application of CdZnTe in photodetector to the practical application of CdZnTe in photoelectric detection equipment.
Create object for reaching foregoing invention, the present invention adopts following technical proposals:
A CdZnTe photodetector containing Graphene transition zone, forms lamellar composite optoelectronic device structure by conductive substrates, CdZnTe film and metal electrode layer are stacked successively, and conductive substrates adopts the SnO of doped with fluorine
2electro-conductive glass, zinc mole percent level in CdZnTe film is 2 ~ 20%, metal electrode layer adopts Au electrode, the Graphene transition zone that a layer thickness is 0.2-0.5mm is set between CdZnTe film and metal electrode layer, makes to form ohmic contact interface composite structure between CdZnTe film and metal electrode layer.
The thickness of above-mentioned CdZnTe film is preferably 200-300mm.
The thickness of above-mentioned metal electrode layer is preferably 100-200nm, and diameter is 1.5-5mm.
The present invention also provides a kind of preparation method of the CdZnTe photodetector containing Graphene transition zone, comprises the steps:
The preparation of a.CdZnTe monocrystalline sublimation source: Cd, Zn, Te of purity being all 99.99% put into quartz ampoule simultaneously, under a high vacuum, mobile heating is adopted to grow the CdZnTe monocrystal of distributed components, wherein the mole percent level of zinc is 2 ~ 20%, using for subsequent use as sublimation source for the crystal cut grown;
B. substrate pre-treatment: the SnO adopting doped with fluorine
2electro-conductive glass (FTO), as substrate, by substrate Qu Latong, acetone and ethanol difference ultrasonic cleaning 5 ~ 20 minutes, washes away impurity and the organic substance of substrate surface, puts into close spaced sublimation reative cell after then being dried;
C.CdZnTe thick film growth course: open mechanical pump and vacuumize in close spaced sublimation reative cell, mechanical pump is closed after close spaced sublimation reative cell internal gas pressure is evacuated to below 5Pa, again the sublimation source prepared in step a and the substrate after step b process are heated to 500 ~ 650 DEG C and 350 ~ 400 DEG C respectively, 30 ~ 180min is prepared at Grown CdZnTe thick film, then CdZnTe thick film and substrate are cooled to room temperature, after the mechanical pump of pass, in close spaced sublimation reative cell, take out the substrate in conjunction with CdZnTe thick film; The preferred thickness controlling preparation CdZnTe thick film is 200-300mm;
D. bromine methyl alcohol corrosion process: compound concentration is the bromine methanol solution of 0.1 ~ 0.5%, the substrate in conjunction with CdZnTe thick film prepared in step c is immersed bromine methanol solution corrosion 10 ~ 60s, the substrate methyl alcohol in conjunction with CdZnTe thick film after corrosion is preserved, and dries up with nitrogen;
E. the preparation process of Graphene transition zone: adopt and repeatedly divide rotating speed spin-coating method to prepare Graphene transition zone in the CdZnTe thick film surface through steps d process, each spin coating graphene solution used is 50-100 μ L, be specially: first spin coating 20-30s under 2000-3000r/min rotating speed, then in the baking oven of 100 DEG C, dry 5min; Then spin coating 10-20s under 2000-1000r/min rotating speed, then dries 5min in the baking oven of 100 DEG C; Spin coating 5-10s under 500-1000r/min rotating speed again, 5min is dried in 100 DEG C of baking ovens, finally the Graphene transition zone completing spin coating is placed 2-3h in the baking oven of 100 DEG C, prepare the Graphene transition zone that thickness is 0.2-0.5mm, and make the solidification of Graphene transition zone be combined in CdZnTe thick film surface, on the CdZnTe thick film of substrate, namely prepare the Graphene transition zone of ohmic contact;
F. the preparation process of gold electrode: adopt vacuum vapor deposition method to prepare Au electrode, open mechanical pump take out in reative cell and gas circuit vacuum to below 5Pa, and open diffusion pump and will be evacuated to 5 ' 10 in reative cell
-3pa, start Au evaporation source baking evaporation, after Au all melts, the Graphene transition zone prepared in step e under the effect of mask plate prepares gold electrode on the surface, make to form ohmic contact interface composite structure between CdZnTe thick film and gold electrode, thus make the CdZnTe photodetector containing Graphene transition zone; The thickness that gold electrode is prepared in preferred control is 100-200nm, and diameter is 1.5-5mm; When adopting vacuum vapor deposition method to prepare Au electrode, the Graphene transition zone surface putting hole hole dia preferably prepared in step e is the circular electrode mask plate of 1.5mm, and preferably controlling evaporation pressure is 5 ' 10
-3pa, evaporation current is preferably 180-220A, and preferably stops 10-15s, and Au is all melted.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
1. increase the structure that Graphene transition zone is a kind of novel photodetector in CdZnTe photodetector of the present invention, the present invention utilizes the excellent properties of Graphene effectively to avoid CdZnTe surface by the impact of environment, the obvious interracial contact improved between CdZnTe and Au electrode, obtain better ohmic contact, thus reduce the dark current of device, improve sensitivity and the photoelectric respone of device;
2. CdZnTe photodetector of the present invention is under the ultraviolet light irradiation of 280nm at wavelength, and detector sensitivity does not adopt the traditional C dZnTe photodetector of Graphene transition zone to rise an order of magnitude;
3. CdZnTe photodetector preparation method of the present invention has that technique is simple, lower, the repeatable high of cost, expands the range of application of CdZnTe film in the photodetectors such as ultraviolet light, X ray and gamma-rays.
Accompanying drawing explanation
Fig. 1 is preferred embodiment of the present invention CdZnTe photodetector structure schematic diagram.
Embodiment
Details are as follows for the preferred embodiments of the present invention:
In the present embodiment, see Fig. 1, a kind of CdZnTe photodetector containing Graphene transition zone, form lamellar composite optoelectronic device structure by conductive substrates 1, CdZnTe film 2 and metal electrode layer 4 are stacked successively, conductive substrates 1 adopts the SnO of doped with fluorine
2electro-conductive glass, zinc mole percent level in CdZnTe film 2 is 4%, the thickness of CdZnTe film 2 is 270mm, metal electrode layer 4 adopts thickness to be 200nm and diameter is the Au electrode of 1.5mm, the Graphene transition zone 3 that a layer thickness is 0.5mm is set between CdZnTe film 2 and metal electrode layer 4, makes to form ohmic contact interface composite structure between CdZnTe film 2 and metal electrode layer 4.
In the present embodiment, see Fig. 1, the present embodiment contains the preparation method of the CdZnTe photodetector of Graphene transition zone, comprises the steps:
The preparation of a.CdZnTe monocrystalline sublimation source: Cd, Zn, Te of purity being all 99.99% put into quartz ampoule simultaneously, under a high vacuum, quality is good, the CdZnTe monocrystal of distributed components to adopt mobile heating to grow, wherein the mole percent level of zinc is 4%, using for subsequent use as sublimation source for the crystal cut grown;
B. substrate pre-treatment: the SnO adopting doped with fluorine
2electro-conductive glass (FTO), as substrate 1, by substrate 1 Qu Latong, acetone and ethanol difference ultrasonic cleaning 15 minutes, washes away impurity and the organic substance on substrate 1 surface, puts into close spaced sublimation reative cell after then being dried;
C.CdZnTe thick film growth course: open mechanical pump and vacuumize in close spaced sublimation reative cell, mechanical pump is closed after close spaced sublimation reative cell internal gas pressure is evacuated to below 5Pa, again the sublimation source prepared in step a and the substrate after step b process 1 are heated to 650 DEG C and 400 DEG C respectively, grow CdZnTe film 2 on substrate 1 and prepare 180min, obtain the CdZnTe thick film 2 that thickness is 270mm, then CdZnTe film 2 and substrate are cooled to room temperature, after the mechanical pump of pass, in close spaced sublimation reative cell, take out the substrate in conjunction with CdZnTe film 2;
D. bromine methyl alcohol corrosion process: compound concentration is the bromine methanol solution of 0.1%, immerses bromine methanol solution corrosion 30s by the substrate 1 in conjunction with CdZnTe film 2 prepared in step c, the substrate 1 in conjunction with CdZnTe film 2 after corrosion is preserved with methyl alcohol, and dries up with nitrogen;
E. the preparation process of Graphene transition zone: adopt and repeatedly divide rotating speed spin-coating method to prepare Graphene transition zone 3 on the surface at the CdZnTe film 2 through steps d process, each spin coating graphene solution used is 55 μ L, be specially: first spin coating 20s under 3000r/min rotating speed, then in the baking oven of 100 DEG C, dry 5min; Then spin coating 18s under 1000r/min rotating speed, then dries 5min in the baking oven of 100 DEG C; Spin coating 9s under 500r/min rotating speed again, 5min is dried in 100 DEG C of baking ovens, finally the Graphene transition zone 3 completing spin coating is placed 2h in the baking oven of 100 DEG C, prepare the Graphene transition zone 3 that thickness is 0.5mm, and make Graphene transition zone 3 solidification be combined in CdZnTe film 2 surface, the CdZnTe film 2 namely on substrate 1 is prepared the Graphene transition zone 3 of ohmic contact;
F. the preparation process of gold electrode: adopt vacuum vapor deposition method to prepare Au electrode, open mechanical pump take out in reative cell and gas circuit vacuum to below 5Pa, and open diffusion pump and will be evacuated to 5 ' 10 in reative cell
-3pa, start Au evaporation source baking evaporation, after Au all melts, be the circular electrode mask plate of 1.5mm at the surperficial putting hole hole dia of Graphene transition zone 3, controlling evaporation pressure is 5 ' 10
-3pa, evaporation current is 220A, stop 10s, after Au all melts, under the effect of mask plate, prepare thickness on the surface at Graphene transition zone 3 be 200nm and diameter is the metal electrode layer 4 of the gold of 1.5mm, make to form ohmic contact interface composite structure between CdZnTe thick film and gold electrode, thus make the CdZnTe photodetector containing Graphene transition zone.
After the present embodiment processes the CdZnTe film 2 adopting close spaced sublimation method (CSS) to prepare, after passing through that the corrosion of bromine methyl alcohol is carried out to the CdZnTe film 2 of deposition again, spin coating proceeding is adopted to prepare Graphene transition zone 3 between CdZnTe film 2 and Au electrode, thus obtain CdZnTe photodetector, the present embodiment prepares Graphene transition zone 3 to improve the contact performance between CdZnTe and electrode between CdZnTe film 2 and Au electrode, the CdZnTe photodetector of preparation is made effectively to avoid CdZnTe surface by the impact of environment, remove the defect struchures on CdZnTe film 2 surface, improve the crystalline quality of CdZnTe film 2, the obvious interracial contact improved between CdZnTe film 2 and Au electrode, obtain better ohmic contact, thus reduce the dark current of device, improve sensitivity and the photoelectric respone of device, expand CdZnTe thick film at ultraviolet light, range of application in the photodetector such as X ray and gamma-rays.
By reference to the accompanying drawings the embodiment of the present invention is illustrated above; but the invention is not restricted to above-described embodiment; multiple change can also be made according to the object of innovation and creation of the present invention; change, the modification made under all Spirit Essences according to technical solution of the present invention and principle, substitute, combination, to simplify; all should be the substitute mode of equivalence; as long as goal of the invention according to the invention; only otherwise deviate from know-why and the inventive concept of the present invention's CdZnTe photodetector containing Graphene transition zone and preparation method thereof, all protection scope of the present invention is belonged to.
Claims (7)
1. the CdZnTe photodetector containing Graphene transition zone, successively by conductive substrates (1), CdZnTe film (2) with metal electrode layer (4) is stacked forms lamellar composite optoelectronic device structure, it is characterized in that: described conductive substrates (1) adopts the SnO of doped with fluorine
2electro-conductive glass, zinc mole percent level in CdZnTe film (2) is 2 ~ 20%, described metal electrode layer (4) adopts Au electrode, the Graphene transition zone (3) that a layer thickness is 0.2-0.5mm is set between described CdZnTe film (2) and described metal electrode layer (4), makes to form ohmic contact interface composite structure between CdZnTe film (2) and metal electrode layer (4).
2. the CdZnTe photodetector according to claim 1 containing Graphene transition zone, is characterized in that: the thickness of described CdZnTe film (2) is 200-300mm.
3. the CdZnTe photodetector containing Graphene transition zone according to claim 1 or 2, is characterized in that: the thickness of described metal electrode layer (4) is 100-200nm, and diameter is 1.5-5mm.
4. a preparation method for the CdZnTe photodetector containing Graphene transition zone, is characterized in that, comprise the steps:
The preparation of a.CdZnTe monocrystalline sublimation source: Cd, Zn, Te of purity being all 99.99% put into quartz ampoule simultaneously, under a high vacuum, mobile heating is adopted to grow the CdZnTe monocrystal of distributed components, wherein the mole percent level of zinc is 2 ~ 20%, using for subsequent use as sublimation source for the crystal cut grown;
B. substrate pre-treatment: the SnO adopting doped with fluorine
2electro-conductive glass, as substrate, by substrate Qu Latong, acetone and ethanol difference ultrasonic cleaning 5 ~ 20 minutes, washes away impurity and the organic substance of substrate surface, puts into close spaced sublimation reative cell after then being dried;
C.CdZnTe thick film growth course: open mechanical pump and vacuumize in close spaced sublimation reative cell, mechanical pump is closed after close spaced sublimation reative cell internal gas pressure is evacuated to below 5Pa, again the sublimation source prepared in described step a and the substrate after described step b process are heated to 500 ~ 650 DEG C and 350 ~ 400 DEG C respectively, 30 ~ 180min is prepared at Grown CdZnTe thick film, then CdZnTe thick film and substrate are cooled to room temperature, after the mechanical pump of pass, in close spaced sublimation reative cell, take out the substrate in conjunction with CdZnTe thick film;
D. bromine methyl alcohol corrosion process: compound concentration is the bromine methanol solution of 0.1 ~ 0.5%, the substrate in conjunction with CdZnTe thick film prepared in described step c is immersed bromine methanol solution corrosion 10 ~ 60s, the substrate methyl alcohol in conjunction with CdZnTe thick film after corrosion is preserved, and dries up with nitrogen;
E. the preparation process of Graphene transition zone: adopt and repeatedly divide rotating speed spin-coating method to prepare Graphene transition zone in the CdZnTe thick film surface through described steps d process, each spin coating graphene solution used is 50-100 μ L, be specially: first spin coating 20-30s under 2000-3000r/min rotating speed, then in the baking oven of 100 DEG C, dry 5min; Then spin coating 10-20s under 2000-1000r/min rotating speed, then dries 5min in the baking oven of 100 DEG C; Spin coating 5-10s under 500-1000r/min rotating speed again, 5min is dried in 100 DEG C of baking ovens, finally the Graphene transition zone completing spin coating is placed 2-3h in the baking oven of 100 DEG C, prepare the Graphene transition zone that thickness is 0.2-0.5mm, and make the solidification of Graphene transition zone be combined in CdZnTe thick film surface, on the CdZnTe thick film of substrate, namely prepare the Graphene transition zone of ohmic contact;
F. the preparation process of gold electrode: adopt vacuum vapor deposition method to prepare Au electrode, open mechanical pump take out in reative cell and gas circuit vacuum to below 5Pa, and open diffusion pump and will be evacuated to 5 ' 10 in reative cell
-3pa, start Au evaporation source baking evaporation, after Au all melts, the Graphene transition zone prepared in described step e under the effect of mask plate prepares gold electrode on the surface, make to form ohmic contact interface composite structure between CdZnTe thick film and gold electrode, thus make the CdZnTe photodetector containing Graphene transition zone.
5. the preparation method of the CdZnTe photodetector according to claim 4 containing Graphene transition zone, is characterized in that: in described step c, and the thickness controlling the described CdZnTe thick film of preparation is 200-300mm.
6. the preparation method of the CdZnTe photodetector containing Graphene transition zone according to claim 4 or 5, is characterized in that: in described step f, and the thickness controlling the described gold electrode of preparation is 100-200nm, and diameter is 1.5-5mm.
7. the preparation method of the CdZnTe photodetector containing Graphene transition zone according to claim 4 or 5, it is characterized in that: in described step f, when adopting vacuum vapor deposition method to prepare Au electrode, the Graphene transition zone surface putting hole hole dia prepared in described step e is the circular electrode mask plate of 1.5mm, and controlling evaporation pressure is 5 ' 10
-3pa, evaporation current is 180-220A, stops 10-15s, Au is all melted.
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