CN101425553B - Manufacturing method for MgZnO based photoconduction type ultraviolet detector - Google Patents
Manufacturing method for MgZnO based photoconduction type ultraviolet detector Download PDFInfo
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- CN101425553B CN101425553B CN2008102316592A CN200810231659A CN101425553B CN 101425553 B CN101425553 B CN 101425553B CN 2008102316592 A CN2008102316592 A CN 2008102316592A CN 200810231659 A CN200810231659 A CN 200810231659A CN 101425553 B CN101425553 B CN 101425553B
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Abstract
The invention relates to a manufacturing method of an MgZnO based light conducting type ultraviolet detector, which comprises the following steps: cleaning a glass substrate, and splashing an MgZnO alloy film layer on the glass substrate under the situation of no base temperature; carrying out annealing treatment to the glass substrate of the MgZnO alloy film layer splashed in the air under the normal pressure; and plating a Al interdigited electrode on a film by utilizing the vacuum evaporation method. The MgZnO alloy film based light conducting detector prototype device with a MSM structure improves the crystal quality of the film deposited, and has less detector dark current, larger difference between the illumination current and the dark current and good response characteristic.
Description
Technical field
The present invention relates to a kind of manufacture method of MgZnO based photoconduction type ultraviolet detector, especially adopt the MgZnO alloy firm, constituted the method for the photoconductive detector antetype device of metal-semiconductor-metal M SM structure as semiconductor layer.
Background technology
Ultraviolet detector is widely used in fields such as astronomy, combustion enginnering, water purified treatment, flame detecting, biological effect, horizon communication and environmental pollution monitoring.The key of ultraviolet detection technology is development high sensitivity, low noise ultraviolet detector.At present, the ultraviolet detector that has put it into commercial operation mainly contains ultraviolet vacuum diode, ultravioplet photomultiplier, ultraviolet enhancer, ultraviolet pick-up tube and solid violet external detector etc., and wherein commonly used is photomultiplier and silica-based ultraviolet light photo diode.Silica-based ultraviolet light fulgurite need attach filter, and photomultiplier then need be worked under high voltage, and the volume heaviness, efficient is low, fragile and cost is higher, for practical application certain limitation is arranged.Therefore, people begin to pay close attention to the wide band gap semiconducter ultraviolet detector.In the past decade, for fear of using expensive filter, realize that (200～300nm) work, wide band gap semiconducter ultraviolet detectors such as SiC, diamond thin, GaN base and zno-based have caused researcher's extensive attention to ultraviolet detector under solar blind.Along with zno-based quantum-well materials preparation technology's maturation, made the quantum well structure of growth lattice match become possibility, and if in the zno-based material, mix Mg, Zn, Cd, can make its energy gap across blind positive ultra-violet (UV) band and visible region.
Utilize the MgZnO alloy firm as semiconductor layer, the Al interdigited electrode that utilizes vacuum evaporation method on film, to be coated with, prepare photoconductive detector antetype device (people (the Averin S V such as Averin S V of metal-semiconductor-metal (MSM) structure, Sachot R.High2speed MSM2photodetectors.13th IntCrimean onference, Microwave ﹠amp; Telecommunication Technology, 2003,9:190) once this MSM structure was carried out the electromagnetic field simulation, the result shows that electric field strength mainly concentrates near the material surface, effective length of penetration of electric field strength is very low).Owing to the lattice mismatch bigger between glass substrate and the MgZnO film and the difference of thermal coefficient of expansion; regular meeting causes film to become three-dimensional island growth; influence the crystal mass of film; and lattice mismatch also regular meeting in the MgZnO film of deposition, introduce stress, this stress and stress relaxation all can produce bigger influence to semi-conductive performance.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of MgZnO based photoconduction type ultraviolet detector of the crystal mass that can significantly improve institute's deposit film.
For reaching above purpose, the present invention takes following technical scheme to be achieved:
A kind of manufacture method of MgZnO based photoconduction type ultraviolet detector is characterized in that, comprises the steps:
Step 1: substrate of glass is cleaned;
Step 2: under the situation of no base reservoir temperature, sputter thickness is the MgZnO alloy firm layer of 200-800nm on substrate of glass;
Step 3: under normal pressure, in air, the substrate of glass of sputter MgZnO alloy firm layer is carried out annealing in process; Annealing temperature is 250 ℃-450 ℃, annealing time 2h;
Step 4: utilize vacuum evaporation method on the MgZnO alloy firm after the annealing, to plate the A1 interdigited electrode of 100--300nm.
In the described step 1 substrate of glass is cleaned, cleaning fluid adopts the concentrated sulfuric acid and hydrogen peroxide, boils after the mixed with percent by volume 7:3, uses deionized water rinsing then, re-uses each ultrasonic cleaning 15-30min of acetone, alcohol and deionized water.Splash-proofing sputtering process parameter in the described step 2 is: sputtering power is 300W, and base vacuum is 1.4 * 10
-3Pa, sputter pressure is 0.5-1Pa.
The present invention adopts sputtering technology to realize the growth of MgZnO alloy firm by glass substrate surface is carried out preliminary treatment; The MgZnO alloy firm that is coated with is carried out in the air annealing in process under the different temperatures improved the crystal mass of institute's deposit film to discharge its stress.The MgZnO film atomic force microscope photo of annealing in process can be found out under the different temperatures, along with the increase of annealing temperature, film surface becomes smoothly, and average grain diameter becomes big, annealing in process is moved surface atom, thereby has improved the surface roughness of film.The thickness of film is about 200-800nm.
The uviol lamp that to the device centre wavelength for preparing under the different condition is 264nm carries out the I-V feature measurement under the irradiation of distance 15cm place, the I-V characteristic curve of each device shows, in the periodic voltage scope of-20V～20V under the constant ultraviolet lighting, each device totally presents dark current and the illumination electric current all is linear growth with applying bias, and the prepared detector electrodes contact major part of this explanation is a good Ohmic contact.Dark current is very little, and illumination electric current and dark current difference are bigger, and the detector of this explanation the present invention preparation has good response characteristic.Because the light source wave band of selecting for use belongs to ultraviolet, the I that device is good-V characteristic also illustrates MgZnO base detector to the ultraviolet band response obviously.
Description of drawings
Fig. 1 is the interdigital electrode formwork structure schematic diagram of ultraviolet detector of the present invention;
Fig. 2 is the MgZnO alloy firm of the embodiment of the invention 1 two-dimentional atomic force microscope figure after through 250 ℃ of annealing in process;
Fig. 3 is the MgZnO alloy firm of the embodiment of the invention 1 three-dimensional atomic force microscope figure after through 250 ℃ of annealing in process;
Fig. 4 is the MgZnO alloy firm of the embodiment of the invention 2 two-dimentional atomic force microscope figure after through 350 ℃ of annealing in process;
Fig. 5 is the MgZnO alloy firm of the embodiment of the invention 2 three-dimensional atomic force microscope figure after through 350 ℃ of annealing in process;
Fig. 6 is the MgZnO alloy firm of the embodiment of the invention 3 two-dimentional atomic force microscope figure after through 450 ℃ of annealing in process;
Fig. 7 is the MgZnO alloy firm of the embodiment of the invention 3 three-dimensional atomic force microscope figure after through 450 ℃ of annealing in process;
Fig. 8 be the MgZnO alloy firm of the embodiment of the invention 1 through 250 ℃ of annealing in process after, the I-V characteristic curve before and after the UV-irradiation;
Fig. 9 be the MgZnO alloy firm of the embodiment of the invention 2 through 350 ℃ of annealing in process after, the I-V characteristic curve before and after the UV-irradiation;
Figure 10 be the MgZnO alloy firm of the embodiment of the invention 3 through 450 ℃ of annealing in process after, the I-V characteristic curve before and after the UV-irradiation.
Embodiment
The present invention is described in further detail below in conjunction with drawings and the specific embodiments:
The photoconductive detector antetype device of metal-semiconductor-metal (MSM) structure of the present invention preparation, its as shown in Figure 1, concrete preparation process is as follows:
1.1 the simple glass substrate is cleaned, and what cleaning fluid used is the concentrated sulfuric acid and hydrogen peroxide, boils after their mixed with percent by volume 7:3, uses deionized water rinsing then, re-uses each ultrasonic cleaning 15-30min of acetone, alcohol and deionized water.
1.2 under the situation of no base reservoir temperature, sputter thickness is the MgZnO alloy firm layer of 200nm on substrate of glass, sputtering power is 300W, and base vacuum is 1.4 * 10
-3Pa, sputter pressure is 0.5Pa.
1.3 under normal pressure, carry out annealing in process in air, annealing temperature is 250 ℃, 2h.
On film, plate the A1 interdigited electrode of thick about 200nm 1.4 utilize vacuum evaporation method.
Embodiment 2
2.1 the simple glass substrate is cleaned, and what cleaning fluid used is the concentrated sulfuric acid and hydrogen peroxide, boils after their mixed with percent by volume 7:3, uses deionized water rinsing then, re-uses each ultrasonic cleaning 15-30min of acetone, alcohol and deionized water.
2.2 under the situation of no base reservoir temperature, sputter thickness is the MgZnO alloy firm layer of 500nm on substrate of glass, sputtering power is 300W, and base vacuum is 1.4 * 10
-3Pa, sputter pressure is 0.8Pa.
2.3 under normal pressure, carry out annealing in process in air, annealing temperature is 350 ℃, 2h.
On film, plate the A1 interdigited electrode of thick about 300nm 2.4 utilize vacuum evaporation method.
3.1 the simple glass substrate is cleaned, and what cleaning fluid used is the concentrated sulfuric acid and hydrogen peroxide, boils after their mixed with percent by volume 7:3, uses deionized water rinsing then, re-uses each ultrasonic cleaning 15-30min of acetone, alcohol and deionized water.
3.2 under the situation of no base reservoir temperature, sputter thickness is the MgZnO alloy firm layer of 800nm on substrate of glass, sputtering power is 300W, and base vacuum is 1.4 * 10
-3Pa, sputter pressure is 1Pa.
3.3 under normal pressure, carry out annealing in process in air, annealing temperature is 450 ℃, 2h.
On film, plate the A1 interdigited electrode of thick about 100nm 3.4 utilize vacuum evaporation method.
By the crystal growth principle as can be known, the growth course of crystal film comprises nucleation and the growth process of atom at the transporting of surface, crystal.The absorption of atom on substrate, transport, energy that nucleation and grain growth are required is external from the low-temperature plasma that glow discharge produces except part, some energy is that annealing temperature provides.When sample does not have the plus substrate temperature, the energy that atom obtains is lower, its diffusion length is shorter, be difficult for being diffused into suitable nucleation site, be easy to nucleation nearby, this moment, promptly usually said three-dimensional island pattern was grown often with the growth of Volmer-Weber (V-W) pattern, prepared film easily becomes the polycrystal of no any preferred orientation or even noncrystal, and crystal mass is relatively poor.Behind the annealed last handling process of sample, the atom of diffusion can obtain enough energy to migrate to suitable nucleation site, crystal growth pattern at this moment realizes that easily Frank-Vander Merwe (F-M) is the growth of two-dimensional layer pattern, thereby crystal mass improves, under suitable growing condition, even can access the intact monocrystal thin films of crystal mass.The MgZnO alloy firm ultraviolet detector of Zhi Zaoing according to the method described in the present invention; owing to the lattice mismatch bigger between glass substrate and the MgZnO film and the difference of thermal coefficient of expansion; regular meeting causes film to become three-dimensional island growth; thereby influence the crystal mass of film; and lattice mismatch also regular meeting the deposition the MgZnO film in introduce stress; this stress and stress relaxation all can produce influence greatly to semi-conductive performance; the crystal mass of deposit film in order to improve, we have carried out annealing in process to film.The atomic force microscope photo of the MgZnO film of annealing under the different annealing temperature in air, institute's favored area are 5 μ m * 5 μ m.Along with the increase of annealing temperature, film surface becomes smoothly as can be seen from Figure, and the average grain diameter change is big, and annealing in process is moved surface atom, thereby has improved the surface roughness of film.The thickness of film is about 200-800nm.
In above-mentioned preparation thin-film process, we utilize atomic force microscope that sample is observed, its result as shown in drawings, wherein Fig. 2, Fig. 3 are the MgZnO alloy firm through 250 ℃ of annealing in process, Fig. 4, Fig. 5 are the MgZnO alloy firm through 350 ℃ of annealing in process, and Fig. 6, Fig. 7 are the MgZnO alloy firm through 450 ℃ of annealing in process.The result shows the increase along with annealing temperature, and film surface becomes smoothly, and average grain diameter becomes big, annealing in process is moved surface atom, thereby improved the surface roughness of film, obtained the surface of atomically flating, satisfied the requirement of making the high-performance optical electronic device.Fig. 8, Fig. 9 Figure 10 shows that the I-V characteristic curve of each embodiment MgZnO based photoconduction type ultraviolet detector spare.The device for preparing under the different condition, its I-V characteristic curve is to utilize centre wavelength to obtain under the irradiation of distance 15cm place for the uviol lamp of 264nm, wherein Fig. 8 be the MgZnO alloy firm through 250 ℃ of annealing in process after, I-V characteristic curve before and after the UV-irradiation, Fig. 9 be the MgZnO alloy firm through 350 ℃ of annealing in process after, I-V characteristic curve before and after the UV-irradiation, Figure 10 be the MgZnO alloy firm through 450 ℃ of annealing in process after, the I-V characteristic curve of UV-irradiation front and back.By I-V characteristic curve test analysis to MgZnO base MSM structured light photoconductive detector antetype device, in the periodic voltage scope of-20V～20V under the constant ultraviolet lighting, each photoconductive detector spare totally presents dark current and the illumination electric current all is linear growth with applying bias, and the prepared detector electrodes contact major part of this explanation is a good Ohmic contact.We can also see that dark current is very little when unglazed the photograph from figure, and less dark current helps improving the signal to noise ratio of detector, improves the performance of detector; Illumination electric current and dark current difference are bigger, show that the detector that we prepare has good response characteristic.Because the light source wave band of selecting for use belongs to ultraviolet, the I that device is good-V characteristic illustrates that also the MgZnO based photoconduction detector that we prepare responds obviously ultraviolet band.
Claims (3)
1. the manufacture method of a MgZnO based photoconduction type ultraviolet detector is characterized in that, comprises the steps:
Step 1: substrate of glass is cleaned;
Step 2: under the situation of no base reservoir temperature, sputter thickness is the MgZnO alloy firm layer of 200-800nm on substrate of glass;
Step 3: under normal pressure, in air, the substrate of glass of sputter MgZnO alloy firm layer is carried out annealing in process; Annealing temperature is 250 ℃-450 ℃, annealing time 2h;
Step 4: utilize vacuum evaporation method on the MgZnO alloy firm after the annealing, to plate the A1 interdigited electrode of 100--300nm.
2. the manufacture method of MgZnO based photoconduction type ultraviolet detector according to claim 1, it is characterized in that, in the described step 1 substrate of glass is cleaned, cleaning fluid adopts the concentrated sulfuric acid and hydrogen peroxide, boil after the mixed with percent by volume 7:3, use deionized water rinsing then, re-use each ultrasonic cleaning 15-30min of acetone, alcohol and deionized water.
3. the manufacture method of MgZnO based photoconduction type ultraviolet detector according to claim 1 is characterized in that, the splash-proofing sputtering process parameter in the described step 2 is: sputtering power is 300W, and base vacuum is 1.4 * 10
-3Pa, sputter pressure is 0.5-1Pa.
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| CN102694052B (en) * | 2011-03-22 | 2016-01-06 | 中国科学院微电子研究所 | Semiconductor device and method for manufacturing the same |
| CN102735350A (en) * | 2011-04-08 | 2012-10-17 | 北京师范大学 | Silicon photo-multiplier structure, production and usage |
| CN103343316A (en) * | 2013-07-01 | 2013-10-09 | 彩虹集团公司 | Method for preparing MgxZn1-xO alloy film |
| CN106997913B (en) * | 2016-01-22 | 2021-05-25 | 中国科学院物理研究所 | Solar blind ultraviolet light detector unit and array |
| CN107134503A (en) * | 2017-05-04 | 2017-09-05 | 福建农林大学 | Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof |
| CN107331672B (en) * | 2017-06-07 | 2020-08-18 | 西安交通大学 | Integrated non-planar ultraviolet photoelectric detector of micro-lens array |
| CN110590181A (en) * | 2018-06-12 | 2019-12-20 | 兰州大学 | Preparation method of ZnO film and application of ZnO film in ultraviolet sensor |
| CN109585593B (en) * | 2018-12-06 | 2020-02-18 | 湖北大学 | Spontaneous polarization field enhanced ultraviolet light detector based on BeZnOS quaternary alloy and preparation method thereof |
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