CN107134503A - Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof - Google Patents
Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof Download PDFInfo
- Publication number
- CN107134503A CN107134503A CN201710306131.6A CN201710306131A CN107134503A CN 107134503 A CN107134503 A CN 107134503A CN 201710306131 A CN201710306131 A CN 201710306131A CN 107134503 A CN107134503 A CN 107134503A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- photodetector
- thin film
- flexible
- cellulose
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 181
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 91
- 229920002678 cellulose Polymers 0.000 title claims abstract description 62
- 239000001913 cellulose Substances 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000010408 film Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000003595 mist Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 42
- 230000004044 response Effects 0.000 abstract description 5
- 230000004043 responsiveness Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 229960001296 zinc oxide Drugs 0.000 description 69
- 230000008569 process Effects 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229920000298 Cellophane Polymers 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000379 polypropylene carbonate Polymers 0.000 description 3
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000010793 electronic waste Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229920001059 synthetic polymer Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- -1 Alcohol ester Chemical class 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000006065 biodegradation reaction Methods 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof, transparency cellulose film specifically using haze is substrate, utilize magnetron sputtering method developing zinc oxide semiconductive thin film, interdigital electrode mask plate is close on zinc oxide semiconductor thin film again, thin metal layer is grown using electron beam evaporation method on the zinc oxide semiconductor thin film interdigital electrode mask not covered in interdigital electrode mask plate and by interdigital electrode mask plate, remove after interdigital electrode mask plate, manufacture has metal electrode on zinc oxide semiconductor thin film, it is final to prepare the flexible zinc oxide UV photodetector of cellulose base.The present invention is prepared for the UV photodetector of flexibility, the characteristics of device has characteristic response and the flexible for ultraviolet light using the transparency cellulose film of haze as substrate growth zinc oxide semiconductor thin film.The transparency cellulose substrate of haze can play light trapping effect, therefore improve the responsiveness of UV photodetector.
Description
Technical field
It is soft more particularly, to a kind of cellulose base the present invention relates to a kind of flexible UV photodetector and preparation method thereof
Property zinc oxide UV photodetector and preparation method thereof.
Background technology
UV photodetector is in fire alarm, the detection of ambient ultraviolet line, ultra-high-tension power transmission line pollution flashover signal monitoring, medical treatment
Diagnostic field has a wide range of applications.Conventional UV photodetector is all to utilize the semiconductive thin film grown in rigid substrate
Prepare, such as the gallium nitride semiconductor film based on Grown on Sapphire Substrates, or the zinc oxide grown in quartz substrate half
Conductor thin film, therefore lack flexible characteristic.
Change with the mankind to electronic equipment demand, the element of electronic equipment internal is also required to be changed.Nowadays,
The mankind have stepped into the epoch of a wearable device, and this kind equipment is it is desirable that flexible and new user interface.Electronics device
The bendability characteristics of part can greatly improve the free degree of portability, setting and the design of electronic equipment.Flexible ultraviolet light photo
Detector, which has, can be reversed and flexural property, and its application, including wearable device, artificial bionic group can have been expanded significantly
The emerging field such as knit.In the recent period, there is researcher in polypropylene carbonate（PPC）Developing zinc oxide semiconductive thin film in flexible substrate,
And it is prepared for UV photodetector（N.N. Jandow, F.K. Yam, S.M. Thahab, H. Abu Hassan, K.
Ibrahim, Current Applied Physics 2010, 10: 1452）；Also there is researcher in poly terephthalic acid second two
Alcohol ester（PET）P-NiO/n-ZnO composite beds are grown in flexible substrate, and are prepared for ultraviolet detector（Md Rezaul Hasan,
Ting Xie, Sara C. Barron, Guannan Liu, Nhan V. Nguyen, Abhishek Motayed,
Mulpuri V. Rao, and Ratan Debnath, APL Materials, 2015, 3: 106101）.
However, existing flexible ultraviolet detector generally uses the artificial synthesising macromolecule copolymer such as PPC or PET for lining
Bottom, the raw material of such substrate is strongly depend on oil（Michaelangelo D. Tabone, James J. Cregg, Eric
J. Beck Man, And Amy E. Landis, Environmental Science & Technology, 2010, 44:
8264）, and typically non-biodegradation or slowly degrade.Side of these electronic wastes generally by filling or burning
Method processing, therefore serious pollution can be caused to environment.Using in degradable material substitution electronic device difficult degradation it is artificial
Synthetic polymer, the problem of environmental pollution that electronic waste is eliminated from source is a current study hotspot.Transparency cellulose
The polymer that substrate is made up of natural macromolecular, with abundance, cost be low, renewable, degradable, lightweight, flexing
The advantages of performance is good, is the ideal material for substituting traditional synthetic polymer substrate.Meanwhile, cellophane has good heat
The physical and chemical performances such as stability, chemical stability, optical property, mechanical property, are expected to the substrates such as substitution plastics, glass and prepare
" green " electronic device of new generation, thus cause the concern of whole world scientist（Yei Hwan Jung, Tzu-Hsuan
Chang, Huilong Zhang, Chunhua Yao, Qifeng Zheng, Vina W. Yang, Hongyi Mi,
Munho Kim, Sang June Cho, Dong-Wook Park, Hao Jiang, Juhwan Lee, Yijie Qiu,
Weidong Zhou, Zhiyong Cai, Shaoqin Gong and Zhenqiang Ma, Nature
Communications, 2015, 6:7170）.
In addition, the substrate of haze can play light trapping effect, utilization rate of the photoelectric device to incident light is improved
（Zhiqiang Fang, Hongli Zhu, Yongbo Yuan, Dongheon Ha, Shuze Zhu, Colin
Preston, Qingxia Chen, Yuanyuan Li, Xiaogang Han, Seongwoo Lee, Gang Chen,
Teng Li, Jeremy Munday, Jinsong Huang and Liangbing Hu, Nano Letters, 2014,
14:765）.Therefore it can be improved as the substrate of zinc oxide UV photodetector using the transparency cellulose film of haze
The optical responsivity of device, prepares the flexible zinc oxide UV photodetector of cellulose base of excellent performance.
The content of the invention
It is an object of the invention to provide flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof,
The detector of preparation has the characteristic detection feature to ultraviolet light；With flexible characteristic；Biodegradable characteristic；
And have good light impingement rate and higher photodetection responsiveness.Its preparation method is easy, and technique is simple, with significant warp
Ji and environmental benefit.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of preparation method of the flexible zinc oxide UV photodetector of cellulose base of the present invention, it is characterised in that including
Following steps：1）Using magnetron sputtering method on the transparency cellulose film of haze developing zinc oxide semiconductive thin film；2）Will
Interdigital electrode mask is close on zinc oxide semiconductor thin film；3）In interdigital electrode mask plate and not by interdigital electrode mask plate
Thin metal layer is grown using electron beam evaporation method on the zinc oxide semiconductor thin film of covering；4）Remove interdigital electrode mask plate
Afterwards, manufacture has metal electrode on zinc oxide semiconductor thin film, finally prepares the flexible zinc oxide UV electricity of cellulose base
Detector.
Step 1）Developing zinc oxide semiconductive thin film haze transparency cellulose film mist degree be more than 70%.
Step 1）Growth zinc oxide semiconductor thin film thickness be 100 ~ 500nm.
Step 3）Electron beam evaporation method growth thin metal layer be Au, Ag, Ni, Cr or Al thin metal layer.
The thickness of the thin metal layer is 50 ~ 1000nm.
The flexible zinc oxide UV photodetector of cellulose base made from the above-mentioned preparation method of the present invention.
Specifically, the present invention uses following technical scheme：
Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof is thin with the transparency cellulose of haze
Film is substrate, using magnetron sputtering method on cellulosic substrate developing zinc oxide semiconductive thin film, and prepare interdigital structure
UV photodetector.Comprise the following steps：
1）Transparency cellulose film using haze is substrate, using one layer of zinc oxide semiconductor thin film of Grown by Magnetron Sputtering, thick
Spend for 100 ~ 500nm.
2）Interdigital electrode mask plate is close on zinc-oxide film.
3）Deposited by electron beam evaporation method grows on cellulosic substrate/zinc oxide semiconductor thin film/interdigital electrode mask plate
Thin metal layer, thin metal layer material is Au, Ag, Ni, Cr or Al metal, and thickness is 50 ~ 1000nm.
4）Interdigital electrode mask plate is removed, the flexible zinc oxide UV photodetector of cellulose base is prepared.
Compared with existing flexible UV photodetector, the present invention has the advantages that following prominent：
1）The present invention prepares substrate that detector uses for cellophane, and its raw material is the biological materials such as bamboo and wood, is originated rich
Richness, it is renewable；And its can natural degradation, using expiring and discontinued product will not be polluted to environment.For alleviating
Petroleum resources shortage, expands the application of cellulosic material, reduces environmental pollution, has important practical significance.
2）The present invention prepares the transparency cellulose film for the haze that detector is used for substrate, and light source is by substrate during detection
Side is incident, and the cellophane of haze can play light trapping effect, improves utilization rate of the detector to incident light, therefore can be with
Improve the optical responsivity of the flexible zinc oxide UV photodetector of cellulose base.
Brief description of the drawings
Fig. 1 is the flexible zinc oxide UV photodetector schematic diagram of cellulose base.
In figure marked as：1. the transparency cellulose film of haze；2. zinc oxide semiconductor thin film；3. metal is electric
Pole.
Fig. 2 is that the embodiment of the present invention prepares the flexible zinc oxide UV photodetector detailed process of cellulose base.
In figure marked as：1. the transparency cellulose film of haze；2. zinc oxide semiconductor thin film；3. metal electrode；
4. interdigital electrode mask plate；5. thin metal layer.
Fig. 3 is the flexible zinc oxide UV photodetector of cellulose base of the preparation of embodiment 1 in 10V biass, different curvature
Photoresponse spectrum under the case of bending of radius.
Fig. 4 is that the flexible zinc oxide that embodiment 2 is prepared in the transparency cellulose film-substrate of the mist degree of mist degree 75% and zero is purple
The photoresponse spectrum of outer photodetector.
Embodiment
Illustrated below by specific embodiment, with the substantive distinguishing features that the present invention is furture elucidated and marked improvement.
Embodiment 1
Referring to accompanying drawing 2, with haze（75%）Transparency cellulose film 1 be substrate, its preparation method is shown in document（Ming-Chun
Hsieh, Hirotaka Koga, Katsuaki Suganuma and Masaya Nogi, Scientific Reports,
2017, 7:41590）, utilize Grown by Magnetron Sputtering zinc oxide semiconductor thin film：Using zinc-oxide ceramic target as target, haze
Transparency cellulose film-substrate load magnetron sputtering chamber, vacuumized using mechanical pump and molecular pump, when the background pressure of vacuum chamber
Power is less than 1 × 10-4During Pa, high-purity argon gas is passed through, when the pressure of regulation sputtering chamber reaches 2 Pa, starts zinc oxide semi-conductor thin
The growth of film, sputtering power is 100 W, and zinc oxide semiconductor thin film is made on the substrate of transparency cellulose film 1 of haze
2, thickness is 100 nm（The process a seen in Fig. 2）.The interdigital electricity of stainless steel produced using Shenzhen Zhuolida Electronics Co., Ltd.
Pole mask plate, interdigital width is 100 μm, and interdigital spacing is 100 μm, and interdigital length is 1cm, and interdigital electrode mask plate 4 is close to
On zinc-oxide film 2（The process b seen in Fig. 2）.Using electron beam evaporation platform metal foil is grown on interdigital electrode mask plate
Layer：The interdigital electrode mask plate 4 of 1/ zinc oxide semiconductor thin film of cellulosic substrate 2/ is loaded electron beam evaporation cavity, with Au metals
For evaporation source, vacuumized using mechanical pump and molecular pump, when the background pressure of vacuum chamber is less than 1 × 10-4During Pa, electronics is adjusted
Rifle line is to 150mA, and growth layer of Au thin metal layer 5, thickness is 200 nm（The process c seen in Fig. 2）.Interdigital electrode is removed to cover
After film version 4, manufacture has metal electrode 3 on zinc oxide semiconductor thin film 2, so that it is purple to prepare the flexible zinc oxide of cellulose base
Outer photodetector（The process d seen in Fig. 2）Or zinc oxide UV photodetector structure as shown in Figure 1.
Fig. 3 be in embodiment 1 the flexible zinc oxide UV photodetector of the cellulose base for preparing under 10V biass, it is different
Bending radius under measure photoelectric respone spectrum.It can be seen that under differently curved state, cellulose base flexibility zinc oxide UV
The response spectra of electric explorer is held essentially constant, and does not occur obvious blue shift or Red Shift Phenomena, shows the cellulose base prepared
Flexible zinc oxide UV photodetector tool keeps good detection stability in the bent state.Detector is under differently curved
Response spectra response peak near 365 nm wavelength, response cut-off side is both less than 400 nm, shows the flexible oxygen of cellulose base
Changing zinc UV photodetector has good ultraviolet detector sensitivity.
Embodiment 2
Referring to accompanying drawing 2, with haze（75%）Transparency cellulose film 1 be substrate, its preparation method is shown in document（Ming-Chun
Hsieh, Hirotaka Koga, Katsuaki Suganuma and Masaya Nogi, Scientific Reports,
2017, 7:41590）, utilize Grown by Magnetron Sputtering zinc oxide semiconductor thin film：Using zinc-oxide ceramic target as target, haze
Transparency cellulose film-substrate load magnetron sputtering chamber, vacuumized using mechanical pump and molecular pump, when the background pressure of vacuum chamber
Power is less than 1 × 10-4During Pa, high-purity argon gas is passed through, when the pressure of regulation sputtering chamber reaches 2 Pa, starts zinc oxide semi-conductor thin
The growth of film, sputtering power is 100 W, and zinc oxide semiconductor thin film is made on the substrate of transparency cellulose film 1 of haze
2, thickness is 200 nm（The process a seen in Fig. 2）.The interdigital electricity of stainless steel produced using Shenzhen Zhuolida Electronics Co., Ltd.
Pole mask plate, interdigital width is 100 μm, and interdigital spacing is 100 μm, and interdigital length is 1cm, and interdigital electrode mask plate 4 is close to
On zinc-oxide film 2（The process b seen in Fig. 2）.Thin metal layer is grown using electron beam evaporation platform：The oxygen of cellulosic substrate 1/
Change the interdigital electrode mask plate 4 of zinc semiconductive thin film 2/ and load electron beam evaporation cavity, using Al metals as evaporation source, utilize mechanical pump
Vacuumized with molecular pump, when the background pressure of vacuum chamber is less than 1 × 10-4During Pa, regulation electron gun line to 150mA, growth one
Layer Al thin metal layers 5, thickness is 500 nm（The process c seen in Fig. 2）.Interdigital electrode mask plate 4 is removed, cellulose is prepared
Base flexibility zinc oxide UV photodetector（The process d seen in Fig. 2）.As a comparison using the transparency cellulose film of zero mist degree as
Substrate, after identical conditioned growth zinc oxide semiconductor thin film, manufacture has metal electrode on zinc oxide semiconductor thin film 2
3, so as to prepare the flexible zinc oxide UV photodetector of cellulose base or zinc oxide UV photodetector knot as shown in Figure 1
Structure.
Fig. 4 is the photoresponse spectrum for the detector for using the transparency cellulose film of the mist degree of mist degree 75% and zero to be prepared for substrate,
Contrast finds the responsiveness for the detector for using the transparency cellulose film of mist degree 75% to be prepared for substrate than using the saturating of zero mist degree
Light fibers element film is that the responsiveness of detector prepared by substrate is high.
Embodiment 3
Referring to accompanying drawing 2, with haze（80%）Transparency cellulose film 1 be substrate, its preparation method is shown in document（Ming-Chun
Hsieh, Hirotaka Koga, Katsuaki Suganuma and Masaya Nogi, Scientific Reports,
2017, 7:41590）, utilize Grown by Magnetron Sputtering zinc oxide semiconductor thin film：Using zinc-oxide ceramic target as target, haze
Transparency cellulose film-substrate load magnetron sputtering chamber, vacuumized using mechanical pump and molecular pump, when the background pressure of vacuum chamber
Power is less than 1 × 10-4During Pa, high-purity argon gas is passed through, when the pressure of regulation sputtering chamber reaches 2 Pa, starts zinc oxide semi-conductor thin
The growth of film, sputtering power is 100 W, and zinc oxide semiconductor thin film is made on the substrate of transparency cellulose film 1 of haze
2, thickness is 400 nm（The process a seen in Fig. 2）.It is interdigital using the stainless steel for producing Shenzhen Zhuolida Electronics Co., Ltd.
Electrode mask plate, interdigital width is 100 μm, and interdigital spacing is 100 μm, and interdigital length is 1cm, and interdigital electrode mask plate 4 is tight
It is attached on zinc-oxide film 2（The process b seen in Fig. 2）.Thin metal layer is grown using electron beam evaporation platform：Cellulosic substrate 1/
The interdigital electrode mask plate 4 of zinc oxide semiconductor thin film 2/ loads electron beam evaporation cavity, using Ag metals as evaporation source, utilizes machinery
Pump and molecular pump are vacuumized, when the background pressure of vacuum chamber is less than 1 × 10-4During Pa, regulation electron gun line to 150mA, growth
One layer of Ag thin metal layer 5, thickness is 800 nm（The process c seen in Fig. 2）.Remove after interdigital electrode mask plate 4, in zinc oxide half
Manufacture has metal electrode 3 on conductor thin film 2, so as to prepare the flexible zinc oxide UV photodetector of cellulose base（See Fig. 2
In process d）Or zinc oxide UV photodetector structure as shown in Figure 1.
Embodiment 4
Referring to accompanying drawing 2, with haze（85%）Transparency cellulose film 1 be substrate, its preparation method is shown in document（Ming-Chun
Hsieh, Hirotaka Koga, Katsuaki Suganuma and Masaya Nogi, Scientific Reports,
2017, 7:41590）, utilize Grown by Magnetron Sputtering zinc oxide semiconductor thin film：Using zinc-oxide ceramic target as target, haze
Transparency cellulose film-substrate load magnetron sputtering chamber, vacuumized using mechanical pump and molecular pump, when the background pressure of vacuum chamber
Power is less than 1 × 10-4During Pa, high-purity argon gas is passed through, when the pressure of regulation sputtering chamber reaches 2 Pa, starts zinc oxide semi-conductor thin
The growth of film, sputtering power is 100 W, and zinc oxide semiconductor thin film is made on the substrate of transparency cellulose film 1 of haze
2, thickness is 500 nm（The process a seen in Fig. 2）.It is interdigital using the stainless steel for producing Shenzhen Zhuolida Electronics Co., Ltd.
Electrode mask plate, interdigital width is 100 μm, and interdigital spacing is 100 μm, and interdigital length is 1cm, and interdigital electrode mask plate 4 is tight
It is attached on zinc-oxide film 2（The process b seen in Fig. 2）.Thin metal layer is grown using electron beam evaporation platform：Cellulosic substrate 1/
The interdigital electrode mask plate 4 of zinc oxide semiconductor thin film 2/ loads electron beam evaporation cavity, using Cr metals as evaporation source, utilizes machinery
Pump and molecular pump are vacuumized, when the background pressure of vacuum chamber is less than 1 × 10-4During Pa, regulation electron gun line to 150mA, growth
One layer of Cr thin metal layer 5, thickness is 1000 nm（The process c seen in Fig. 2）.Remove after interdigital electrode mask plate 4, in zinc oxide
Manufacture has metal electrode 3 on semiconductive thin film 2, so as to prepare the flexible zinc oxide UV photodetector of cellulose base（See
Process d in Fig. 2）Or zinc oxide UV photodetector structure as shown in Figure 1.
The foregoing is only presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, should all belong to the covering scope of the present invention.
Claims (6)
1. the preparation method of the flexible zinc oxide UV photodetector of a kind of cellulose base, it is characterised in that comprise the following steps：
1）Using magnetron sputtering method haze transparency cellulose film（1）Upper developing zinc oxide semiconductive thin film（2）；2）Will be interdigital
Electrode mask version（4）It is close to zinc oxide semiconductor thin film（2）On；3）In interdigital electrode mask plate（4）Not by interdigital electrode
The zinc oxide semiconductor thin film that mask plate is covered（2）Upper use electron beam evaporation method grows thin metal layer（5）；4）Remove interdigital
Electrode mask plate（4）Afterwards, in zinc oxide semiconductor thin film（2）Upper manufacture has metal electrode（3）, finally prepare cellulose base
Flexible zinc oxide UV photodetector.
2. a kind of preparation method of the flexible zinc oxide UV photodetector of cellulose base as claimed in claim 1, its feature
It is step 1）Developing zinc oxide semiconductive thin film haze transparency cellulose film（1）Mist degree be more than 70%.
3. a kind of preparation method of the flexible zinc oxide UV photodetector of cellulose base as claimed in claim 1, its feature
It is step 1）Growth zinc oxide semiconductor thin film（2）Thickness be 100 ~ 500nm.
4. a kind of preparation method of the flexible zinc oxide UV photodetector of cellulose base as claimed in claim 1, its feature
It is step 3）Electron beam evaporation method growth thin metal layer（5）For Au, Ag, Ni, Cr or Al thin metal layer.
5. a kind of preparation method of the flexible zinc oxide UV photodetector of cellulose base as described in claim 1 or 4, it is special
Levy and be the thin metal layer（5）Thickness be 50 ~ 1000nm.
6. the flexible zinc oxide UV photodetector of cellulose base made from any described preparation methods of claim 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710306131.6A CN107134503A (en) | 2017-05-04 | 2017-05-04 | Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710306131.6A CN107134503A (en) | 2017-05-04 | 2017-05-04 | Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107134503A true CN107134503A (en) | 2017-09-05 |
Family
ID=59716691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710306131.6A Pending CN107134503A (en) | 2017-05-04 | 2017-05-04 | Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107134503A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164994A (en) * | 2018-03-16 | 2019-08-23 | 北京纳米能源与系统研究所 | InGaN/GaN multiple quantum wells solar battery |
| CN111244201A (en) * | 2020-01-15 | 2020-06-05 | 中国科学院长春光学精密机械与物理研究所 | Flexible self-supporting ZnO ultraviolet detector and preparation method thereof |
| CN111564509A (en) * | 2020-06-16 | 2020-08-21 | 山东大学 | Full-oxide flexible photoelectric detector and preparation method and application thereof |
| CN113380906A (en) * | 2021-05-26 | 2021-09-10 | 浙江大学 | Transparent ultraviolet photoelectric detector based on metal-semiconductor-metal structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055903A (en) * | 2007-04-30 | 2007-10-17 | 西安交通大学 | A making method for high-performance ZnO MSM ultra-violet photoconduction detector |
| CN101425553A (en) * | 2008-10-09 | 2009-05-06 | 彩虹集团公司 | Manufacturing method for MgZnO based photoconduction type ultraviolet detector |
| CN101807619A (en) * | 2010-03-19 | 2010-08-18 | 河南大学 | Transparent flexible ultraviolet detector and preparation method thereof |
| CN103236464A (en) * | 2013-04-14 | 2013-08-07 | 吉林大学 | TiO2 ultraviolet detector taking polyethyleneimine (PEI) as interface modification layer and preparation method for TiO2 ultraviolet detector |
| CN103258865A (en) * | 2012-02-21 | 2013-08-21 | 三星康宁精密素材株式会社 | Oxide thin film substrate, method of fabricating thereof, photovoltaic and oled including the same |
| CN103302910A (en) * | 2013-06-25 | 2013-09-18 | 电子科技大学 | Biodegradable flexible conductive base plate and preparation method thereof |
| CN106373669A (en) * | 2016-10-10 | 2017-02-01 | 福建农林大学 | Preparation method for cellulose-based aluminum-doped zinc oxide transparent conductive material |
-
2017
- 2017-05-04 CN CN201710306131.6A patent/CN107134503A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055903A (en) * | 2007-04-30 | 2007-10-17 | 西安交通大学 | A making method for high-performance ZnO MSM ultra-violet photoconduction detector |
| CN101425553A (en) * | 2008-10-09 | 2009-05-06 | 彩虹集团公司 | Manufacturing method for MgZnO based photoconduction type ultraviolet detector |
| CN101807619A (en) * | 2010-03-19 | 2010-08-18 | 河南大学 | Transparent flexible ultraviolet detector and preparation method thereof |
| CN103258865A (en) * | 2012-02-21 | 2013-08-21 | 三星康宁精密素材株式会社 | Oxide thin film substrate, method of fabricating thereof, photovoltaic and oled including the same |
| CN103236464A (en) * | 2013-04-14 | 2013-08-07 | 吉林大学 | TiO2 ultraviolet detector taking polyethyleneimine (PEI) as interface modification layer and preparation method for TiO2 ultraviolet detector |
| CN103302910A (en) * | 2013-06-25 | 2013-09-18 | 电子科技大学 | Biodegradable flexible conductive base plate and preparation method thereof |
| CN106373669A (en) * | 2016-10-10 | 2017-02-01 | 福建农林大学 | Preparation method for cellulose-based aluminum-doped zinc oxide transparent conductive material |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164994A (en) * | 2018-03-16 | 2019-08-23 | 北京纳米能源与系统研究所 | InGaN/GaN multiple quantum wells solar battery |
| CN110164994B (en) * | 2018-03-16 | 2021-04-09 | 北京纳米能源与系统研究所 | InGaN/GaN multi-quantum well solar cell |
| CN111244201A (en) * | 2020-01-15 | 2020-06-05 | 中国科学院长春光学精密机械与物理研究所 | Flexible self-supporting ZnO ultraviolet detector and preparation method thereof |
| CN111564509A (en) * | 2020-06-16 | 2020-08-21 | 山东大学 | Full-oxide flexible photoelectric detector and preparation method and application thereof |
| CN111564509B (en) * | 2020-06-16 | 2022-02-15 | 山东大学 | Full-oxide flexible photoelectric detector and preparation method and application thereof |
| CN113380906A (en) * | 2021-05-26 | 2021-09-10 | 浙江大学 | Transparent ultraviolet photoelectric detector based on metal-semiconductor-metal structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107134503A (en) | Flexible zinc oxide UV photodetector of a kind of cellulose base and preparation method thereof | |
| Kang et al. | Ultrathin, lightweight and flexible perovskite solar cells with an excellent power-per-weight performance | |
| Wu et al. | Ultrathin and conformable lead halide perovskite photodetector arrays for potential application in retina‐like vision sensing | |
| CN101859858B (en) | Transparent conducting electrode based on graphene and manufacture method and applications thereof | |
| Han et al. | Efficiency above 12% for 1 cm2 flexible organic solar cells with Ag/Cu grid transparent conducting electrode | |
| Saeed et al. | PEDOT: PSS: CuNW-based transparent composite electrodes for high-performance and flexible organic photovoltaics under indoor lighting | |
| Bao et al. | Facile preparation of TiO X film as an interface material for efficient inverted polymer solar cells | |
| EP0917208A1 (en) | Polymer-nanocrystal photo device and method for making the same | |
| WO2017073472A1 (en) | Highly reliable perovskite solar cell | |
| CN103579415B (en) | A kind of preparation method of zinc oxide nanowire array ultraviolet photoelectric detector | |
| Nam et al. | > 10% Efficiency Polymer: Fullerene Solar Cells with Polyacetylene‐Based Polyelectrolyte Interlayers | |
| KR100946249B1 (en) | Method for fabricating transparent conducting oxide electrode with high transmittance | |
| Hu et al. | Effect of textured electrodes with light-trapping on performance of polymer solar cells | |
| Engmann et al. | Photon recycling across a ultraviolet-blocking layer by luminescence in polymer solar cells | |
| CN104810436B (en) | A kind of light-emitting diode chip for backlight unit and preparation method thereof | |
| Gao et al. | Enhanced efficiency in polymer solar cells via hydrogen plasma treatment of ZnO electron transport layers | |
| CN103746056A (en) | Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof | |
| CN210805800U (en) | Flexible ultraviolet detector of GaN nanorod array growing on graphene substrate | |
| CN109524491B (en) | GaN-CdZnTe composite structure component with ZnTe transition layer, application and preparation method thereof | |
| Kim et al. | Improved performance of Ga2O3/ITO‐based transparent conductive oxide films using hydrogen annealing for near‐ultraviolet light‐emitting diodes | |
| CN208385439U (en) | A kind of novel metal doped transparent conductive film | |
| KR20170046877A (en) | Composition for reducing work function of metal oxide-based electron-collection buffer layer, inverted organic solar cell using the same, and preparation method of the inverted organic solar cell | |
| CN112928174B (en) | Photoelectric detector of nano material modified light-transmitting film and preparation method thereof | |
| Lin et al. | Enhancing conversion efficiency of inverted organic solar cells using Ag nanoparticles and long wavelength absorbing tin (II) phthalocyanine | |
| Yuan | Low-temperature synthesis of ZnO nanoparticles for inverted polymer solar cell application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170905 |
|
| WD01 | Invention patent application deemed withdrawn after publication |