CN103746056A - Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof - Google Patents
Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof Download PDFInfo
- Publication number
- CN103746056A CN103746056A CN201310740552.1A CN201310740552A CN103746056A CN 103746056 A CN103746056 A CN 103746056A CN 201310740552 A CN201310740552 A CN 201310740552A CN 103746056 A CN103746056 A CN 103746056A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- doped zinc
- wire array
- oxide nano
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 172
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 33
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 29
- 229910052733 gallium Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 238000002360 preparation method Methods 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 229910002601 GaN Inorganic materials 0.000 claims description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 16
- 238000004528 spin coating Methods 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 13
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 12
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 238000002207 thermal evaporation Methods 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 239000000428 dust Substances 0.000 claims description 8
- 239000003054 catalyst Substances 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 229920002521 macromolecule Polymers 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 16
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 15
- 239000004926 polymethyl methacrylate Substances 0.000 description 15
- 239000000523 sample Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 239000002070 nanowire Substances 0.000 description 14
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 5
- 239000003708 ampul Substances 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 5
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229920005573 silicon-containing polymer Polymers 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 4
- 239000003517 fume Substances 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a wavelength-adjustable light-emitting diode based on a gallium-doped zinc oxide nanowire array and a manufacturing method thereof. The wavelength-adjustable light-emitting diode based on the gallium-doped zinc oxide nanowire array comprises a p-type conducting substrate, a gallium-doped zinc oxide nanowire array, a bottom electrode and a top electrode, wherein the gallium-doped zinc oxide nanowire array and the bottom electrode are positioned on the p-type conducting substrate; the top electrode is positioned on the gallium-doped zinc oxide nanowire array. The manufacturing method of the wavelength-adjustable light-emitting diode based on the gallium-doped zinc oxide nanowire array comprises the following steps: providing a p-type conducting substrate; growing a gallium-doped zinc oxide nanowire array on the p-type conducting substrate by controlling the gallium-doping amount of the gallium-doped zinc oxide nanowire array; rotationally coating the grown gallium-doped zinc oxide nanowire array with a blocking layer; etching and removing the blocking layer coated on the top of the gallium-doped zinc oxide nanowire array; depositing the top electrode on the top of the gallium-doped zinc oxide nanowire array; removing a part of the gallium-doped zinc oxide nanowire array to expose the p-type conducting substrate, and manufacturing the bottom electrode on the exposed p-type conducting substrate.
Description
Technical field
The present invention relates to light emitting semiconductor device field, particularly a kind of adjustable light-emitting diode of wavelength based on Ga-doped zinc oxide nano-wire array and preparation method thereof.
Background technology
Semiconductor light-emitting-diode is the small and exquisite light source of new generation of a kind of high energy efficiency, long-life and volume, has widely use at aspects such as illumination, information communication, Display Technique and medical skills.Emission wavelength is an important performance parameter of semiconductor light-emitting-diode, and its bandwidth by luminescent material determines.The adjustable light-emitting diode of wavelength has important utilization prospect at aspects such as white-light illuminating, optics Display Techniques, becomes the study hotspot of semiconductor light-emitting-diode.
In visible ray and ultraviolet light region, gallium nitride material is that business-like light-emitting diode is prepared material, is typical third generation semiconductor material with wide forbidden band.Compared with gallium nitride, zinc oxide has identical lattice structure, similar energy gap, and zinc oxide has better character, such as exciton bind energy is higher, more easily realizes the light transmitting under room temperature; Zinc oxide low price in addition, preparation method is simple, and being expected to replace gallium nitride becomes more efficient and economic light-emitting diode.
The wavelength tunable radiation emitting diode of open report is all to realize by indium doped gallium nitride the movement that gallium nitride can be with at present, and device architecture is all flat film structure, in the process of doping, easily there is a large amount of lattice defects, and the very difficult raising of doping content, thereby cause the luminescent properties of device to decline.
Summary of the invention
The object of the invention is in view of the foregoing defects the prior art has, a kind of brand-new adjustable light-emitting diode of nano-wire array wavelength is proposed, the i.e. adjustable light-emitting diode of the wavelength based on Ga-doped zinc oxide nano-wire array, it not only can realize the controllable adjustment of emission wavelength from ultraviolet to visible region, and can improve doping content, and the material lattice defect problem bringing can avoid adulterating time.The invention also proposes a kind of method of preparing this adjustable light-emitting diode of wavelength based on Ga-doped zinc oxide nano-wire array.
In order to address the above problem, the invention provides a kind of adjustable light-emitting diode of wavelength of Ga-doped zinc oxide nano-wire array, comprise p-type electric-conducting substrate, be positioned at the on-chip Ga-doped zinc oxide nano-wire array of p-type electric-conducting and hearth electrode, and be positioned at the top electrode on Ga-doped zinc oxide nano-wire array.
Preferably, p-type electric-conducting substrate comprises Sapphire Substrate and is positioned at p-type gallium nitride film or the p-type carborundum films in Sapphire Substrate.
Preferably, on Ga-doped zinc oxide nano-wire array, spin coating has barrier layer, and this barrier layer is polymethyl methacrylate (PMMA), dimethyl silicone polymer (PDMS) or polystyrene (PS) macromolecule solvent.
Preferably, the barrier layer of Ga-doped zinc oxide nano-wire array top parcel is removed, top electrode comprises the transparency conductive electrode and the first metal electrode that are deposited on Ga-doped zinc oxide nano-wire array top, and hearth electrode comprises and is deposited on on-chip the second metal electrode of p-type electric-conducting and the 3rd metal electrode.
The present invention also provides the preparation method of the adjustable light-emitting diode of a kind of Ga-doped zinc oxide nano-wire array wavelength, comprises the steps:
(1) provide a p-type electric-conducting substrate;
(2) on p-type electric-conducting substrate by controlling the gallium doping of Ga-doped zinc oxide nano-wire array, carry out the growth of Ga-doped zinc oxide nano-wire array;
(3) spin coating one deck barrier layer on the Ga-doped zinc oxide nano-wire array of growth;
(4) etching is removed the barrier layer that is wrapped in Ga-doped zinc oxide nano-wire array top;
(5) at Ga-doped zinc oxide nano-wire array top deposition top electrode;
(6) the Ga-doped zinc oxide nano-wire array of removal subregion, exposes p-type electric-conducting substrate, on the p-type electric-conducting substrate exposing, makes hearth electrode.
Preferably, p-type electric-conducting substrate is provided is in Sapphire Substrate, to adopt Metalorganic chemical vapor deposition legal system for p-type gallium nitride or p-type carborundum films to step (1); Preferably, and step (1) afterwards, step (2) before, on p-type electric-conducting substrate, evaporation layer of gold film is as the catalyst of growth Ga-doped zinc oxide nano-wire array.
Preferably, in step (2), with the chemical vapour deposition technique Ga-doped zinc oxide nano-wire array of growing using gallium oxide as doped source.More preferably, first Zinc oxide powder and carbon dust are mixed, then mix gallium oxide powder, after grinding evenly, with chemical vapour deposition technique, prepare this Ga-doped zinc oxide nano-wire array, wherein the zinc oxide of Ga-doped zinc oxide nano-wire array growth and carbon dust raw material are to mix according to mass ratio 1:1, and the doping ratio of gallium oxide doping powder is mass ratio 5%-50%.
Alternatively, in step (2), be growth Ga-doped zinc oxide nano-wire array using gallium particle as doped source, gallium particle adulterates according to the mol ratio 5%-50% of gallium element.
Preferably, in step (3), with macromolecule organic solvent this barrier layer of spin coating on Ga-doped zinc oxide nano-wire array, spin coating finishes rear solvent evaporates, and barrier layer polymer is just wrapped in outside Ga-doped zinc oxide nano-wire array.Preferably, macromolecule organic solvent adopts polymethyl methacrylate (PMMA), dimethyl silicone polymer (PDMS) or polystyrene (PS).
Preferably, in step (4), with plasma etching technology, remove the unnecessary barrier layer that is wrapped in Ga-doped zinc oxide nano-wire array top, prepare good top electrode contact.Preferably, in step (5), adopt magnetron sputtering or thermal evaporation method, the Ga-doped zinc oxide nano-wire array top of finishing in etching deposition layer of transparent conductive electrode and indium metal electrode are as top electrode.Preferably, in step (6), with the subregional Ga-doped zinc oxide nano-wire array in dilute hydrochloric acid solution erosion removal conductive substrates top, expose p-type electric-conducting substrate, then adopt the method for magnetron sputtering or thermal evaporation, on the p-type electric-conducting substrate exposing, nickel deposited and indium metal electrode are as hearth electrode.
Compared with prior art, beneficial effect of the present invention is as follows:
1. the present invention proposes to make the adjustable light-emitting diode of wavelength by Ga-doped zinc oxide, with making by indium doped gallium nitride that adjustable light-emitting diode compares traditionally, it is basic innovation, can obtain good character and realize adjustable to visible region of ultraviolet light, can reduce costs again.
2. the adjustable light-emitting diode of Ga-doped zinc oxide wavelength of the present invention adopts nanowire array structure, the structure that is all flat film with wavelength tunable radiation emitting diode is traditionally compared, only need, by utilizing Ga-doped zinc oxide nano-wire array to regulate the energy gap of zinc oxide, just can realize the wavelength regulation and control of zinc oxide nano-wire array light-emitting diode.Along with the increase of gallium doping content, the wavelength of light-emitting diode moves to visible region from ultraviolet region.Without the adjusting that realizes emission wavelength by adjusting thin-film material component, device architecture novelty, simplification and preparation method are simple.
3. the adjustable light-emitting diode of wavelength of the present invention adopts zinc oxide nano-wire array, under nanoscale, the doping of material and growth are different from conventional thin-film material, because size is dwindled, doping efficiency can be higher, and the bigger serface of nano material can discharge the stress in growth course, reduce the defect of material, the material lattice defect of having brought when therefore the adjustable light-emitting diode of zinc oxide nano-wire array wavelength of the present invention has been avoided high-concentration dopant, has realized the controllable adjustment of emission wavelength from ultraviolet to visible region.
4. adjustable light-emitting diode of the present invention adopts the p-type electric-conducting substrate Ga-doped zinc oxide nano-wire array of growing, and p-type electric-conducting substrate contributes to realize the orthogonal array growth of Ga-doped zinc oxide nano wire, improves doping content.
5. the adjustable light-emitting diode of the wavelength of Ga-doped zinc oxide nano-wire array of the present invention can be realized the controllable adjustment of wavelength from ultraviolet to visible region, and gallium doping content is high, function admirable.The method that the adjustable light-emitting diode of wavelength that the present invention is this Ga-doped zinc oxide nano-wire array of preparation adopts is simple, easily industrially realizes and quantizes to produce.
Adjustable light-emitting diode of wavelength of Ga-doped zinc oxide nano-wire array of the present invention and preparation method thereof has important utilization prospect in novel nano-material preparation, wavelength regulation field of optoelectronic devices.
Accompanying drawing explanation
Fig. 1 is the structural representation of Ga-doped zinc oxide nano-wire array LED device of the present invention.
Fig. 2 is the schematic diagram of preparation Ga-doped zinc oxide nano-wire array of the present invention two temperature-area tubular furnaces used.
Fig. 3 is ESEM picture and the high-resolution picture of zinc oxide nano-wire array under different levels of doping of the present invention.(a)-and (f) be followed successively by pure zinc oxide, 5%, 10%, 15%, 20%, the Ga-doped zinc oxide nano-wire array of 25% content.The illustration of every width figure is its corresponding high-resolution picture, and scale is 500 nanometers.
Fig. 4 is x-ray photoelectron power spectrum (XPS) characterization result of Ga-doped zinc oxide nano-wire array of the present invention (5% doped in concentrations profiled).
The high-resolution projection Electronic Speculum picture that Fig. 5 (a) is Ga-doped zinc oxide nano wire of the present invention (25% doped in concentrations profiled), and corresponding constituency high-resolution lattice image and Fourier variation dot matrix.(b) be corresponding nano wire angle of elevation annular dark field image picture and distribution diagram of element.
Fig. 6 is the Photoluminescence of gallium zinc oxide nano-wire array of the present invention.
Fig. 7 is the ESEM picture of Ga-doped zinc oxide nano-wire array of the present invention before and after the spin coating of barrier layer.
Fig. 8 is the voltage-to-current curve of Ga-doped zinc oxide nano-wire array photodiode device of the present invention.
Fig. 9 is the electrical testing of top electrode of the present invention and hearth electrode, and test shows that top electrode and hearth electrode are all ohmic contact.
Figure 10 is the zinc oxide nano-wire array photodiode electroluminescence curve under 20 volts of bias voltages outside of the different gallium doping contents of the present invention.
Figure 11 is the digital photograph of the photodiode of the zinc oxide nano-wire array of the different gallium doping contents of the present invention while lighting.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.It should be noted that, what in figure, provide is only schematic example, is not limitation of the present invention.
Referring to Fig. 1, the adjustable light-emitting diode of the wavelength of Ga-doped zinc oxide nano-wire array of the present invention comprises p-type electric-conducting substrate, and this p-type electric-conducting substrate comprises substrate 1 and is positioned at the p-type electric-conducting film 2 on substrate 1.Wherein, substrate 1 can be the substrate such as sapphire, preferably Sapphire Substrate.The adjustable light-emitting diode of wavelength of Ga-doped zinc oxide nano-wire array of the present invention also comprises and is positioned at the on-chip Ga-doped zinc oxide nano-wire array 3 of p-type electric-conducting and hearth electrode 7,8, and is positioned at the top electrode 5,6 on Ga-doped zinc oxide nano-wire array 3.
P-type electric-conducting substrate of the present invention can be anyly can realize the epitaxially grown substrate of zinc oxide nanowire, and schematic and nonrestrictive example has p-type gallium nitride, p-type carborundum etc.P-type electric-conducting substrate contributes to realize the orthogonal array growth of zinc oxide nanowire, improves doping content.
Ga-doped zinc oxide nano-wire array 3 can be prepared by methods such as chemical vapour deposition technique or physical vaporous depositions.
On Ga-doped zinc oxide nano-wire array 3, spin coating has barrier layer 4.Barrier layer 4 is wrapped in nano wire realizes the barrier layer effect of electrode, thereby can effectively prevent top electrode 5,6 from running through nano-wire array 3 and cause break-over of device.
This barrier layer 4 can be various high molecular organic solvents, and exemplary example has the macromolecular materials such as polymethyl methacrylate (PMMA), dimethyl silicone polymer (PDMS), polystyrene (PS), preferably polymethyl methacrylate (PMMA).
The barrier layer of Ga-doped zinc oxide nano-wire array 3 top parcels is removed, and to prepare good top electrode contact, preferably with plasma etching technology, removes the barrier layer 4 that is wrapped in Ga-doped zinc oxide nano-wire array 3 tops.
The adjustable light-emitting diode its preparation method of wavelength of Ga-doped zinc oxide nano-wire array of the present invention comprises the steps:
(1) provide a p-type electric-conducting substrate;
(2) on this p-type electric-conducting substrate by controlling the gallium doping of Ga-doped zinc oxide nano-wire array, carry out the growth of Ga-doped zinc oxide nano-wire array;
(3) spin coating one deck barrier layer on the Ga-doped zinc oxide nano-wire array of growth;
(4) etching is removed the barrier layer that is wrapped in Ga-doped zinc oxide nano-wire array top;
(5) at Ga-doped zinc oxide nano-wire array top deposition top electrode;
(6) the Ga-doped zinc oxide nano-wire array of removal subregion, exposes p-type electric-conducting substrate, on the p-type electric-conducting substrate exposing, makes hearth electrode.
Wherein, step (1) is in Sapphire Substrate, to adopt Metalorganic chemical vapor deposition legal system to provide this p-type electric-conducting substrate for p-type gallium nitride or p-type carborundum conductive film.Employing contributes to realize the orthogonal array growth of zinc oxide nanowire such as p-type gallium nitride or this class p-type electric-conducting substrate of p-type carborundum, improve doping content.
Step (1) afterwards and step (2) before, on p-type gallium nitride or carborundum conductive substrate, evaporation layer of gold film is as the catalyst of growth Ga-doped zinc oxide nano-wire array.
Wherein, in step (2), with the chemical vapour deposition technique Ga-doped zinc oxide nano-wire array of growing using gallium oxide as doped source.Particularly, first Zinc oxide powder and carbon dust are mixed, then mix gallium oxide powder, grind the evenly rear pair temperature-area tubular furnaces that adopt and prepare this Ga-doped zinc oxide nano-wire array with chemical vapour deposition technique.
The zinc oxide of Ga-doped zinc oxide nano-wire array growth and carbon dust raw material are to mix according to mass ratio 1:1, and the doping ratio of gallium oxide doping powder is mass ratio 5%-50%.Doped source can be also gallium particle, and doping ratio is according to the mol ratio 5%-50% of gallium element.
Wherein, in step (3), with macromolecule organic solvent this barrier layer of spin coating on Ga-doped zinc oxide nano-wire array, after spin coating finishes, solvent evaporates, barrier layer polymer is just wrapped in outside Ga-doped zinc oxide nano-wire array.Macromolecule organic solvent adopts the macromolecular materials such as polymethyl methacrylate (PMMA), dimethyl silicone polymer (PDMS) or polystyrene (PS), preferably adopts polymethyl methacrylate (PMMA).
Wherein, in step (4), with plasma etching technology, remove the unnecessary barrier layer that is wrapped in Ga-doped zinc oxide nano-wire array top, to prepare good top electrode contact.
Wherein, in step (5), adopt magnetron sputtering or thermal evaporation method, the Ga-doped zinc oxide nano-wire array top of finishing in etching deposition layer of transparent conductive electrode and indium metal electrode are as top electrode.
Wherein, in step (6), with the subregional Ga-doped zinc oxide nano-wire array in dilute hydrochloric acid solution erosion removal conductive substrates top, expose p-type electric-conducting substrate, then adopt the method for magnetron sputtering or thermal evaporation, on the p-type electric-conducting substrate exposing, nickel deposited and indium metal electrode are as hearth electrode.
In conjunction with specific embodiments, describe the adjustable light-emitting diode its preparation method of wavelength of Ga-doped zinc oxide nano-wire array of the present invention in detail below.
First prepare Ga-doped zinc oxide nano-wire array.Ga-doped zinc oxide nano-wire array can adopt several different methods preparation, adopts in the present embodiment chemical vapour deposition technique preparation, but also can adopt the method for physical vapour deposition (PVD).In the present embodiment, preparation facilities adopts conventional two temperature-area tubular furnaces, as shown in Figure 2.In the two temperature-area tubular furnaces shown in Fig. 2, the 9th, tube furnace heat-insulation layer, the 10th, diamond heating district, the 11st, outer quartz ampoule, the 12nd, quartz ampoule air inlet, the 13rd, quartz ampoule bleeding point, the 14th, the quartz ampoule of a built-in end opening, the 15th, quartz boat, the 16th, p-type electric-conducting substrate, the 17th, thermocouple.
(1). the preparation of Ga-doped zinc oxide nano-wire array
(1) first in Sapphire Substrate, adopt Metalorganic chemical vapor deposition method deposition p-type electric-conducting film, make p-type electric-conducting substrate 2.The present invention is using the Sapphire Substrate entirety of complete deposition growing p-type electric-conducting film as p-type electric-conducting substrate.In this example, take p-type gallium nitride as example, adopt Metalorganic chemical vapor deposition method deposition p-type gallium nitride conductive film, make p-type gallium nitride conductive substrate 2, also can adopt p-type carborundum, make p-type carborundum conductive substrate.Then get a certain size p-type gallium nitride conductive substrate (length and width are 0.5cm × 0.5cm), use successively ethanol, acetone and deionized water ultrasonic cleaning ten minutes, with drying nitrogen, dry up afterwards stand-by.
(2) utilize the golden film of electron beam evaporation deposition instrument evaporation 5～10 nanometers on the p-type gallium nitride conductive substrate cleaning up, as the catalyst of growth Ga-doped zinc oxide nano-wire array.
(3) growth source material preparation: weigh 6 grams of Zinc oxide powders and 6 grams of carbon dusts mix, be then divided into 6 equal portions, be numbered No. A-F, A raw material is used for preparing pure zinc oxide nano-wire array in contrast.In B-F powder, add respectively 5%, 10%, 15%, 20%, the gallium oxide powder of 25% weight ratio, then grinds respectively evenly.This example, take gallium oxide as doped source, adopts the gallium particle of equal molal weight, can realize equally doping effect of the present invention.
(4) the A powder preparing is placed in the quartz boat 15 of Fig. 2, puts into the inner tube blind end of two temperature-area tubular furnaces.Then the p-type gallium nitride conductive substrate 16 that is coated with golden film catalyst is placed in to inner tube openend, 20～30 centimetres of both distances.Then as shown in Fig. 2 13, vacuum in quartz ampoule 11 is evacuated to below 5 handkerchiefs, pass into the oxygen of 1sccm and the argon gas of 49sccm, as shown in Figure 2 12, afterwards the warm area at quartz boat 15 and p-type gallium nitride conductive substrate 16 places is warming up to respectively to 1000 ℃ and 880 ℃, as shown in Figure 2 10 and 11, then be incubated 30 minutes.At high temperature, carbon dust obtains zinc fume by Zinc oxide powder reduction, and zinc fume obtains the nano-wire array of zinc oxide under the induction of Au catalyst with oxygen reaction.After naturally cooling to room temperature, obtain zinc oxide nano-wire array, be labeled as sample 1.
(5) repeat above-mentioned steps (1)-(4), change successively A powder into B-F powder.At high temperature, carbon dust obtains zinc fume and gallium steam by Zinc oxide powder and gallium oxide powder reduction, zinc fume obtains the nano-wire array of zinc oxide under the induction of Au catalyst with oxygen reaction, thereby gallium steam is as doped source introducing zinc oxide nanowire, growth obtains Ga-doped zinc oxide nano-wire array.Obtaining thus sample is respectively doping 5%, 10%, 15%, 20% and 25% Ga-doped zinc oxide nano-wire array, be labeled as respectively 2-6 sample.(a) and (b) in accompanying drawing 3, (c), (d), (e), (f) are respectively the ESEM pictures of 1-6 sample, and the illustration of every width figure is its corresponding high-resolution picture, and scale is 500 nanometers.Accompanying drawing 4 is x X-ray photoelectron spectroscopy X results of No. 2 samples (5% doped in concentrations profiled), occurs the peak of gallium element, shows that gallium element successfully mixes in zinc oxide nano-wire array.Accompanying drawing 5(a) be that the high-resolution projection Electronic Speculum picture of No. 6 samples (25% doped in concentrations profiled) and corresponding constituency high-resolution lattice image and Fourier change dot matrix, (b) be corresponding nano wire angle of elevation annular dark field image picture and distribution diagram of element, the gallium element that shows high concentration has evenly mixed zinc oxide nanowire, but nano wire still keeps good crystallization property, there is not amorphous and obvious lattice defect.Each the Photoluminescence that curve is respectively 1-6 sample in Fig. 6, therefrom can find out the raising along with doping content, the glow peak of 1-6 sample progressively moves to 417nm from 380nm, at the glow peak at 550nm place, strengthen gradually, this explanation gallium doping content can effectively regulate emission wavelength simultaneously.
In above-mentioned steps, make after Ga-doped zinc oxide nano-wire array 1-6 sample, next, with the Ga-doped zinc oxide nano-wire array 1-6 sample making wavelength tunable radiation emitting diode component preparing.
(2). the making of wavelength tunable radiation emitting diode component
In above-mentioned steps, make on the basis of Ga-doped zinc oxide nano-wire array 1-6 sample, implement respectively following step, obtain corresponding wavelength tunable radiation emitting diode component, measure the device property of light-emitting diode.
(1) spin coating barrier layer (shown in Fig. 1 4): in order to prevent top electrode from running through nano-wire array, cause break-over of device, first spin coating one deck barrier layer on nano-wire array, barrier layer can be various high molecular organic solvents.After spin coating finishes, solvent evaporates, barrier layer polymer parcel nano wire is realized the barrier layer effect of electrode.The present invention, take polymethyl methacrylate (PMMA) as example, can be also the macromolecular materials such as dimethyl silicone polymer (PDMS), polystyrene (PS).
(2) barrier etch: in order to prepare good top electrode contact, need to remove the unnecessary barrier layer macromolecular material that is wrapped in nano wire top with plasma etching technology.The power 800W of plasma etching, 10 minutes time.What Fig. 7 showed is the ESEM picture before and after sample 2 etchings, can find out that gallium dopen Nano linear array is coated by PMMA completely, and only expose at tip.
(3) top electrode deposition (shown in Fig. 1 5): adopt magnetron sputtering or thermal evaporation method, the nano wire top of finishing in etching deposition layer of transparent conductive electrode (tin indium oxide, thickness 100 nanometers) and indium metal electrode (shown in Fig. 15 and 6).
(4) hearth electrode deposition: with the Ga-doped zinc oxide nano-wire array of dilute hydrochloric acid solution erosion removal subregion, expose p-type electric-conducting substrate, be used for making hearth electrode.Afterwards, adopt the method for magnetron sputtering or thermal evaporation, in the p-type electric-conducting substrate of exposing, deposit the nickel (shown in Fig. 1 7) of 100 nanometers and indium metal electrode (shown in Fig. 1 8).
(5) device detection: after completing electrode fabrication, adopt probe station or bonding equipment lead-in wire, complete electricity and the optic test of device.
What Fig. 8 showed is the current-voltage characteristic of utilizing the LED device that the Ga-doped zinc oxide nano-wire array of sample 1-6 makes.As can be seen from the figure,, along with gallium doping content increases, same electrical is depressed electric current to be increased.Fig. 9 shows be the LED device that makes take sample 2 Ga-doped zinc oxide nano-wire arrays as example, the current-voltage characteristic of its top electrode and hearth electrode, it shows that test surfaces top electrode and hearth electrode are all ohmic contact.Figure 10 utilizes wavelength tunable radiation emitting diode component that the Ga-doped zinc oxide nano-wire array of sample 1-6 the makes electroluminescence curve chart under 20 volts of bias voltages.Can find out, along with the increase of gallium doping content, glow peak is adjusted to visible region from ultraviolet region.Figure 11 is at 20 volts of bias voltages, utilizes the luminous picture of the wavelength tunable radiation emitting diode component that the Ga-doped zinc oxide nano-wire array of sample 1-6 makes.
Therefore, the Ga-doped zinc oxide nano-wire array photodiode that the present invention utilizes above-mentioned steps to prepare, adopt the p-type electric-conducting substrate Ga-doped zinc oxide nano-wire array of growing, contribute to realize the orthogonal array growth of zinc oxide nanowire, can improve the doping content of gallium, and employing zinc oxide nano-wire array, because size is dwindled, doping efficiency can be higher, and the bigger serface of nano material can discharge the stress in growth course, the material lattice defect of bringing in the time of can avoiding concentration higher-doped.Meanwhile, owing to only need, by utilizing the energy gap of gallium doping with regard to adjustable zinc oxide, being therefore easy to just can realize the wavelength regulation and control of zinc oxide nano-wire array light-emitting diode.Along with the increase of gallium doping content, glow peak is adjusted to visible region from ultraviolet region, realized the controllable adjustment on a large scale from ultraviolet to visible region, simultaneously, along with the red shift of wavelength, glow peak is broadening gradually, until realize white light emission (as (e) in Figure 11 with (f)), this provides good utilization prospect in utilization fields such as white-light illuminating, the direct panchromatic demonstration of photodiode, wavelength regulation new type light sources for the present invention.
Generally speaking, the invention provides a kind of adjustable light-emitting diode of wavelength based on Ga-doped zinc oxide nano-wire array and preparation method thereof, in novel nano-material preparation, wavelength regulation field of optoelectronic devices, have important utilization prospect.
Claims (10)
1. the adjustable light-emitting diode of the wavelength of Ga-doped zinc oxide nano-wire array, comprises p-type electric-conducting substrate, is positioned at the on-chip Ga-doped zinc oxide nano-wire array of p-type electric-conducting and hearth electrode, and is positioned at the top electrode on Ga-doped zinc oxide nano-wire array.
2. the adjustable light-emitting diode of Ga-doped zinc oxide nano-wire array wavelength as claimed in claim 1, wherein p-type electric-conducting substrate comprises Sapphire Substrate and is positioned at p-type gallium nitride film or the p-type carborundum films in Sapphire Substrate.
3. the adjustable light-emitting diode of Ga-doped zinc oxide nano-wire array wavelength as claimed in claim 1, wherein on Ga-doped zinc oxide nano-wire array, spin coating has barrier layer.
4. the adjustable light-emitting diode of Ga-doped zinc oxide nano-wire array wavelength as claimed in claim 3, wherein the barrier layer of Ga-doped zinc oxide nano-wire array top parcel is removed, top electrode comprises the transparency conductive electrode and the first metal electrode that are deposited on Ga-doped zinc oxide nano-wire array top, and hearth electrode comprises and is deposited on on-chip the second metal electrode of p-type electric-conducting and the 3rd metal electrode.
5. a preparation method for the adjustable light-emitting diode of Ga-doped zinc oxide nano-wire array wavelength, comprises the steps:
(1) provide a p-type electric-conducting substrate;
(2) on p-type electric-conducting substrate by controlling the gallium doping of Ga-doped zinc oxide nano-wire array, carry out the growth of Ga-doped zinc oxide nano-wire array;
(3) spin coating one deck barrier layer on the Ga-doped zinc oxide nano-wire array of growth;
(4) etching is removed the barrier layer that is wrapped in Ga-doped zinc oxide nano-wire array top;
(5) at Ga-doped zinc oxide nano-wire array top deposition top electrode;
(6) the Ga-doped zinc oxide nano-wire array of removal subregion, exposes p-type electric-conducting substrate, on the p-type electric-conducting substrate exposing, makes hearth electrode.
6. preparation method as claimed in claim 5, wherein p-type electric-conducting substrate is provided is in Sapphire Substrate, to adopt Metalorganic chemical vapor deposition legal system for p-type gallium nitride or p-type carborundum films to step (1), and step (1) afterwards, step (2) before, on p-type electric-conducting substrate, evaporation layer of gold film is as the catalyst of growth Ga-doped zinc oxide nano-wire array.
7. as the preparation method of any one in claim 5-6, wherein:
In step (2), the Ga-doped zinc oxide nano-wire array of growing using gallium oxide as doped source with chemical vapour deposition technique, particularly, first Zinc oxide powder and carbon dust are mixed, then mix gallium oxide powder, after grinding evenly, with chemical vapour deposition technique, prepare this Ga-doped zinc oxide nano-wire array, wherein the zinc oxide of Ga-doped zinc oxide nano-wire array growth and carbon dust raw material are to mix according to mass ratio 1:1, and the doping ratio of gallium oxide doping powder is mass ratio 5%-50%.
8. preparation method as claimed in claim 7, is wherein growth Ga-doped zinc oxide nano-wire array using gallium particle as doped source, and gallium particle adulterates according to the mol ratio 5%-50% of gallium element.
9. as the preparation method of any one in claim 5-6, wherein in step (3), with macromolecule organic solvent this barrier layer of spin coating on Ga-doped zinc oxide nano-wire array, spin coating finishes rear solvent evaporates, and barrier layer polymer is just wrapped in outside Ga-doped zinc oxide nano-wire array.
10. as the preparation method of any one in claim 5-6, wherein:
In step (5), adopt magnetron sputtering or thermal evaporation method, the Ga-doped zinc oxide nano-wire array top of finishing in etching deposition layer of transparent conductive electrode and indium metal electrode are as top electrode; With
In step (6), with the subregional Ga-doped zinc oxide nano-wire array in dilute hydrochloric acid solution erosion removal conductive substrates top, expose p-type electric-conducting substrate, then adopt the method for magnetron sputtering or thermal evaporation, on the p-type electric-conducting substrate exposing, nickel deposited and indium metal electrode are as hearth electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310740552.1A CN103746056A (en) | 2013-12-28 | 2013-12-28 | Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310740552.1A CN103746056A (en) | 2013-12-28 | 2013-12-28 | Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103746056A true CN103746056A (en) | 2014-04-23 |
Family
ID=50503063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310740552.1A Pending CN103746056A (en) | 2013-12-28 | 2013-12-28 | Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103746056A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576849A (en) * | 2014-12-22 | 2015-04-29 | 北京工业大学 | Method for improving ultraviolet light intensity of ZnO micron line/nano wire |
| CN104638079A (en) * | 2015-02-02 | 2015-05-20 | 浙江大学 | Ultraviolet LED (light emitting diode) based on one-dimensional micro-nano structure/gallium nitride thin film Schottky junction |
| CN104810434A (en) * | 2015-02-10 | 2015-07-29 | 华中科技大学 | White-light light emitting diode and preparation method thereof |
| CN106544729B (en) * | 2016-11-24 | 2018-12-28 | 国家纳米科学中心 | A kind of GaN-ZnO solid solution nano wire, preparation method and the usage |
| CN113249785A (en) * | 2021-04-27 | 2021-08-13 | 湖北大学 | Co-doped zinc oxide nanowire array, preparation method thereof and optoelectronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060189018A1 (en) * | 2003-06-26 | 2006-08-24 | Gyu-Chul Yi | P-n heterojuction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same |
| CN1921160A (en) * | 2005-08-25 | 2007-02-28 | 三星电机株式会社 | Nanowire light emitting device and manufacturing method thereof |
| CN1949554A (en) * | 2006-11-02 | 2007-04-18 | 浙江大学 | ZnO base nano-wire LED and preparing method thereof |
-
2013
- 2013-12-28 CN CN201310740552.1A patent/CN103746056A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060189018A1 (en) * | 2003-06-26 | 2006-08-24 | Gyu-Chul Yi | P-n heterojuction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same |
| CN1921160A (en) * | 2005-08-25 | 2007-02-28 | 三星电机株式会社 | Nanowire light emitting device and manufacturing method thereof |
| CN1949554A (en) * | 2006-11-02 | 2007-04-18 | 浙江大学 | ZnO base nano-wire LED and preparing method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576849A (en) * | 2014-12-22 | 2015-04-29 | 北京工业大学 | Method for improving ultraviolet light intensity of ZnO micron line/nano wire |
| CN104576849B (en) * | 2014-12-22 | 2017-02-22 | 北京工业大学 | Method for improving ultraviolet light intensity of ZnO micron line/nano wire |
| CN104638079A (en) * | 2015-02-02 | 2015-05-20 | 浙江大学 | Ultraviolet LED (light emitting diode) based on one-dimensional micro-nano structure/gallium nitride thin film Schottky junction |
| CN104638079B (en) * | 2015-02-02 | 2018-03-23 | 浙江大学 | Ultraviolet LED based on one-dimensional micro-nano structure/gallium nitride film schottky junction |
| CN104810434A (en) * | 2015-02-10 | 2015-07-29 | 华中科技大学 | White-light light emitting diode and preparation method thereof |
| CN106544729B (en) * | 2016-11-24 | 2018-12-28 | 国家纳米科学中心 | A kind of GaN-ZnO solid solution nano wire, preparation method and the usage |
| CN113249785A (en) * | 2021-04-27 | 2021-08-13 | 湖北大学 | Co-doped zinc oxide nanowire array, preparation method thereof and optoelectronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bano et al. | ZnO-organic hybrid white light emitting diodes grown on flexible plastic using low temperature aqueous chemical method | |
| Mashford et al. | All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing | |
| JP6649649B2 (en) | Manufacturing system and manufacturing method of perovskite film based on low pressure chemical vapor deposition | |
| Liu et al. | Scalable integration of indium zinc oxide/photosensitive-nanowire composite thin-film transistors for transparent multicolor photodetectors array | |
| CN103746056A (en) | Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof | |
| Liu et al. | A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector | |
| CN101859858A (en) | Transparent conducting electrode based on graphene and manufacture method and applications thereof | |
| Huang et al. | Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on $\hbox {TiO} _ {2} $ Films Deposited by Radio-Frequency Magnetron Sputtering | |
| Locovei et al. | Physical properties of Cu and Dy co-doped ZnO thin films prepared by radio frequency magnetron sputtering for hybrid organic/inorganic electronic devices | |
| Chen et al. | Field-emission and photoelectrical characteristics of ZnO nanorods photodetectors prepared on flexible substrate | |
| Demir et al. | White light generation tuned by dual hybridization of nanocrystals and conjugated polymers | |
| Li et al. | High-performance and flexible CsPbBr3 UV–vis photodetectors fabricated via chemical vapor deposition | |
| CN110777356A (en) | Rare earth doped molybdenum sulfide monomolecular layer film and preparation method thereof | |
| CN109873048A (en) | A kind of manufacturing method of the outer opto-electronic device of transparent violet | |
| Li et al. | Solar-blind photodetectors based on polycrystalline MgZnO thin films | |
| CN110233173A (en) | A kind of multifunction device and preparation method thereof | |
| Ghosh et al. | Effect of oxygen flow rate and radio-frequency power on the photoconductivity of highly ultraviolet sensitive ZnO thin films grown by magnetron sputtering | |
| CN104979038B (en) | Topological insulator/graphene composite and flexible transparent conductive film and preparation method and application | |
| Yuan | Low-temperature growth of well-aligned ZnO nanowire arrays by chemical bath deposition for hybrid solar cell application | |
| Chackrabarti et al. | Investigation on the physical properties of Zn0. 94Cu0. 06O coated film | |
| Wang et al. | Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate | |
| Huang et al. | Effect of gas enhanced metal-semiconductor-metal UV photodetectors based on thermal annealing tungsten oxide thin film prepared by sol–gel method | |
| Weng et al. | Laterally-grown ZnO-nanowire photodetectors on glass substrate | |
| Chou et al. | The study of humidity sensor based on Li-doped ZnO nanorods by hydrothermal method | |
| Yang et al. | Bandgap engineered ultraviolet photodetectors with gallium-zinc-oxide via co-sputtering method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140423 |
|
| WD01 | Invention patent application deemed withdrawn after publication |