CN106997913B - Solar blind ultraviolet light detector unit and array - Google Patents
Solar blind ultraviolet light detector unit and array Download PDFInfo
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- CN106997913B CN106997913B CN201610041786.0A CN201610041786A CN106997913B CN 106997913 B CN106997913 B CN 106997913B CN 201610041786 A CN201610041786 A CN 201610041786A CN 106997913 B CN106997913 B CN 106997913B
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- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000001514 detection method Methods 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 3
- 239000010439 graphite Substances 0.000 claims abstract description 3
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 abstract description 6
- 238000003384 imaging method Methods 0.000 abstract description 3
- 239000007772 electrode material Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- -1 lanthanum aluminate Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides a solar blind ultraviolet light detector unit and an array, wherein the solar blind ultraviolet light detector unit comprises: an oxide substrate, wherein the forbidden band width of the oxide substrate is more than 4.4 electron volts; a first electrode and a second electrode provided on a surface of the oxide substrate, the second electrode having a through hole. The electrode material of the solar blind ultraviolet detector unit of the invention can be metal, graphite or other conductive materials. The solar blind ultraviolet detector array comprises a plurality of solar blind ultraviolet detector units, and second electrodes of the plurality of solar blind ultraviolet detector units are electrically connected to form a net structure. The solar blind ultraviolet detector array can realize scanning detection, imaging and tracking of targets in a sunlight environment.
Description
Technical Field
The invention relates to the field of ultraviolet light detectors, in particular to a solar blind ultraviolet light detector.
Background
Because the solar blind ultraviolet detector is not interfered by sunlight, the solar blind ultraviolet detector can detect ultraviolet light in a sunlight environment, and has very important and wide application in the fields of military, national defense and scientific research, such as missile interception, early warning and the like.
The present inventors have reported a solar blind deep ultraviolet light detector of a fast response perovskite oxide single crystal with a rise time of nanosecond, for example, document 1: xing et al, Optics Letters, Vol.34, No.11,1675 (2009); document 2: xu Wang et al, Physica B,392,104 (2007); chinese patent application No. 201010107349.7 and chinese patent application No. 200510082702.X also disclose several solar blind ultraviolet light detectors. However, the solar blind ultraviolet light detector is still very limited so far, the sensitivity of the solar blind ultraviolet light detector is far from meeting the practical requirement, and the solar blind line array and area array deep ultraviolet light detector has not been reported yet.
Disclosure of Invention
In order to solve the above technical problems in the prior art, an embodiment of the present invention provides a solar blind ultraviolet light detector unit, including:
an oxide substrate, wherein the forbidden band width of the oxide substrate is more than 4.4 electron volts;
a first electrode and a second electrode provided on a surface of the oxide substrate, the second electrode having a through hole.
Preferably, the first electrode and the second electrode are disposed on the same side of the oxide substrate, and the first electrode is located in the through hole of the second electrode.
Preferably, the first electrode is located at the center of the through hole of the second electrode.
Preferably, the first electrode and the second electrode may be disposed on opposite sides of the oxide substrate, respectively.
Preferably, the central axes of the first electrode and the second electrode are on the same straight line and perpendicular to the surface of the oxide substrate.
Preferably, the through hole of the second electrode is a circular hole or a polygonal hole.
Preferably, the first electrode is circular or polygonal.
Preferably, the forbidden band width of the oxide substrate is 4.4-16 electron volts.
Preferably, the material of the oxide substrate is LaAlO3、ZrO2Or MgO.
Preferably, the material of the first electrode or the second electrode is a conductive material such as gold, platinum, silver, aluminum, copper, graphite, indium tin oxide, strontium ruthenate or an alloy.
Embodiments of the present invention also provide a solar-blind ultraviolet light detector array, including:
a plurality of the solar blind ultraviolet detector units;
wherein the plurality of solar blind ultraviolet detector units are arranged in an array.
Preferably, the second electrodes of the plurality of solar blind ultraviolet detector units are electrically connected to form a mesh structure.
The solar blind ultraviolet detector array realizes scanning detection, imaging and tracking of a target.
Drawings
Embodiments of the invention are further described below with reference to the accompanying drawings, in which:
fig. 1 is a schematic perspective view of a solar-blind uv detector unit according to a first embodiment of the present invention.
Fig. 2 is a top view of the solar-blind uv detector unit shown in fig. 1.
Fig. 3 is a cross-sectional view of the solar-blind uv detector unit shown in fig. 1, taken along line a-a.
Fig. 4 is a cross-sectional view of a solar-blind uv detector unit according to a second embodiment of the present invention.
Fig. 5 is a top view of the solar-blind uv detector unit shown in fig. 4.
Fig. 6 is a bottom view of the solar blind uv detector unit shown in fig. 4.
Fig. 7 is a cross-sectional view of a solar-blind uv-light detector unit according to a third embodiment of the invention.
Fig. 8 is a top view of the solar-blind uv detector unit shown in fig. 7.
Fig. 9 is a bottom view of the solar blind uv detector unit shown in fig. 7.
Fig. 10 is a detection circuit diagram of a solar-blind ultraviolet light detector array according to a first embodiment of the present invention.
Fig. 11 is a top view of a solar-blind uv detector array according to a second embodiment of the present invention.
Fig. 12 is a cross-sectional view of a solar-blind uv detector array according to a third embodiment of the present invention.
Fig. 13 is a top view of the solar-blind uv detector array shown in fig. 12.
Fig. 14 is a bottom view of the solar blind uv detector array shown in fig. 12.
Fig. 15 is a side view of a solar-blind uv detector array according to a fourth embodiment of the present invention.
Fig. 16 is a top view of the solar-blind uv detector array shown in fig. 15.
Fig. 17 is a bottom view of the solar blind uv detector shown in fig. 15.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail by embodiments with reference to the accompanying drawings.
Fig. 1 is a schematic perspective view of a solar-blind ultraviolet light detector unit 10 according to a first embodiment of the present invention, fig. 2 is a top view of the solar-blind ultraviolet light detector unit 10, and fig. 3 is a sectional view of the solar-blind ultraviolet light detector unit 10 taken along line a-a, the cross section of which is parallel to one side of the solar-blind ultraviolet light detector unit 10. As shown in fig. 1-3, the solar blind uv detector unit 10 comprises lanthanum aluminate (LaAlO)3) A substrate 11 and a layer of a material disposed on the LaAlO3Electrode 12 and electrode 13 on the same side of substrate 11. Wherein, the electrode 12 has a circular hole 122 with a diameter of 300 microns, and the cylindrical electrode 13 with a diameter of 80 microns is positioned in the circular hole 122 of the electrode 12. The circular hole 122 is aligned with the central axis (not shown in FIG. 3) of the electrode 13 and perpendicular to LaAlO3The surface of the substrate 11.
To prevent the electrode lead (not shown in FIG. 1) soldered to the electrode 13 from affecting the incidence of the probe light on LaAlO3LaAlO may be applied to the surface of the substrate 113The other surface of the substrate 11, on which no electrode is disposed, serves as an optical window, thereby reducing reflection of the probe light and improving the absorption rate of the probe light. Therefore, the electrode material of the solar-blind ultraviolet detector unit 10 is not limited to a transparent conductive material, and may be any conductive material, such as gold, platinum, silver, aluminum, copper, indium tin oxide (IOT), strontium ruthenate (SrRuO)3) Or an alloy, etc.
According to other embodiments of the present invention, the electrode 12 has a square, oval or polygonal through hole.
According to other embodiments of the invention, the electrode 13 is circular or polygonal.
One skilled in the art can use the existing semiconductor process to polish LaAlO3Forming a conductive material film on a single crystal substrate by vacuum coating, magnetron sputtering or laser deposition, and photoetchingThe electrodes 12, 13 are formed simultaneously with the etching process. The preparation steps are few, and the process is simple.
Fig. 4 is a cross-sectional view of a solar-blind ultraviolet light detector unit 30 according to a second embodiment of the present invention, fig. 5 is a top view of the solar-blind ultraviolet light detector unit 30, and fig. 6 is a bottom view of the solar-blind ultraviolet light detector unit 30. As shown in fig. 4-6, the solar-blind uv detector unit 30 comprises LaAlO3 A substrate 31 and a layer of a material disposed on the LaAlO3Electrode 32 and electrode 33 on opposite sides of substrate 31. The electrode 32 has a square through hole 322 with a side of 50 μm. The electrodes 33 are square in shape with a side length of 60 microns. The inner sidewall of the square through-hole 322 is parallel to the outer sidewall of the electrode 33. The central axes of the square through hole 322 and the electrode 33 (not shown in FIG. 4) are collinear and perpendicular to LaAlO3The surface of substrate 31.
The electrode 32 is used as an optical window of the solar-blind ultraviolet light detector unit 30, so that the detection light can be incident to LaAlO through the square through hole 322 of the electrode 323On a substrate 31. The electrodes of the solar-blind uv detector unit 30 may be made of any electrically conductive material. Electrodes 32, 33 are provided on LaAlO3The detection light is incident from the electrode 32 side on the opposite sides of the substrate 31, so that the interference of the electrode and its lead wire to the detection light can be avoided.
Fig. 7 is a cross-sectional view of a solar-blind ultraviolet light detector unit 40 according to a third embodiment of the present invention, fig. 8 is a top view of the solar-blind ultraviolet light detector unit 40, and fig. 9 is a bottom view of the solar-blind ultraviolet light detector unit 40. It is substantially the same as the solar-blind uv detector unit 30 except that the electrode 42 has a circular hole 422 with a diameter of 80 microns and the electrode 43 is circular with a diameter of 80 microns.
Fig. 10 is a detection circuit diagram of a solar-blind ultraviolet light detector array according to a first embodiment of the present invention. As shown in fig. 10, the solar-blind ultraviolet light detector array 110 includes 5 solar-blind ultraviolet light detector units 10 arranged in a line shape, and a distance D1 between central axes of two adjacent electrodes 13 is 500 micrometers, wherein the electrodes 12 in each solar-blind ultraviolet light detector unit 10 are electrically connected to form a mesh structure and serve as the common electrode 112 of the solar-blind ultraviolet light detector array 110. The common electrode 112 is electrically connected to the positive electrode of the dc power source E, and the electrode leads on the 5 electrodes 13 are respectively connected to the negative electrode of the dc power source E through the sampling resistors R.
When detecting light (photon energy is more than LaAlO)3Forbidden bandwidth of substrate) to LaAlO3LaAlO on the surface of the substrate3Electron-hole pairs are generated inside the substrate. The inventor of the patent finds that LaAlO3The diffusion length of the photogenerated carriers of the substrate can reach more than 1 cm under the electric field intensity of 1V/cm, so that LaAlO3Applying a small electric field between the two electrodes of the substrate can make the electron-hole diffuse to the two electrodes respectively, thereby forming a current. Corresponding photoelectric signals can be obtained by measuring the voltage at two ends of the 5 sampling resistors R.
By way of example, assume that the direction of the probe light emitted by the target is unchanged and that the solar-blind uv detector array 110 remains stationary during the measurement. If the photo signals V3, V4, and V5 are obtained at the first timing, the photo signals V2, V3, and V4 are obtained at the second timing, and the photo signals V1, V2, and V3 are obtained at the third timing. Therefore, from the above measurement results, the size, the moving direction, and the moving speed of the target in one dimension can be basically known. Therefore, the scanning detection, imaging and tracking of the target in one dimension are realized.
According to other embodiments of the invention, zirconium oxide (ZrO) is used2) Or magnesium oxide (MgO) substrate instead of LaAlO in the above embodiment3A substrate. Because LaAlO3The forbidden band width of (A) is 5.6 electron volts (the corresponding photon wavelength is
)，ZrO2The forbidden band width of (A) is 5.8 electron volts (the corresponding photon wavelength is
) The forbidden band width of MgO is 8 electron volts (corresponding to photon wavelength)
) Therefore, sunlight does not generate photoelectric effect in the oxide single crystal material, and interference of sunlight is avoided.
The invention is not limited to the use of the three oxide single crystal materials, and the invention can also use the oxide single crystal materials with the forbidden band width larger than 4.4 electron volts (the wavelength corresponding to photon energy is
) Other oxide single crystal materials of (4).
Fig. 11 is a top view of a solar-blind uv detector array according to a second embodiment of the present invention. As shown in fig. 11, the solar-blind uv detector array 120 is composed of 64 (arranged in an 8 × 8 array) solar-blind uv detector units 10. The electrodes 12 in each solar blind ultraviolet detector unit 10 are electrically connected to form a mesh structure and serve as a common electrode 122 of the solar blind ultraviolet detector array 120. The distance D2 between the central axes of two adjacent electrodes 13 is 350 μm.
LaAlO with larger size based on the existing semiconductor process3Large-area preparation of solar-blind ultraviolet detector array on substrate, and vertical LaAlO3And cutting the substrate in the thickness direction to directly obtain the solar blind ultraviolet detector unit and the solar blind ultraviolet detector array with the required shape, such as a circular array or a rectangular array.
The usage method and principle of the solar-blind ultraviolet light detector array 120 are the same as those of the solar-blind ultraviolet light detector array 110, and the description thereof is omitted. The target can be area scan detected, imaged and tracked in two dimensions using the solar-blind uv detector array 120.
Fig. 12 is a cross-sectional view of a solar-blind ultraviolet light detector array 130 according to a third embodiment of the present invention, fig. 13 is a top view of the solar-blind ultraviolet light detector array 130, and fig. 14 is a bottom view of the solar-blind ultraviolet light detector array 130. As shown in fig. 12 to 14, the solar-blind ultraviolet light detector array 130 includes 6 solar-blind ultraviolet light detector units 30 arranged in a line shape, wherein the electrodes 32 in each solar-blind ultraviolet light detector unit 30 are electrically connected to form a mesh structure and serve as the common electrode 132 of the solar-blind ultraviolet light detector array 130. The distance D3' between the central axes of two adjacent electrodes 32 is 100 micrometers, and the distance D3 between the central axes of two adjacent electrodes 33 is 100 micrometers.
Since the central axes of the electrodes 32, 33 in each solar-blind ultraviolet light detector unit 30 are on the same straight line, when ultraviolet light passes through the through-hole of the common electrode 132, it is incident on LaAlO3When on the surface of the substrate, the generated electron-hole diffuse to the corresponding set of electrodes 32 and 33, respectively, and thus, different detector units can detect ultraviolet light corresponding to different spaces.
Fig. 15 is a side view of a solar-blind uv detector array 140 according to a fourth embodiment of the present invention. Fig. 16 is a top view of the solar-blind ultraviolet light detector array 140, and fig. 17 is a bottom view of the solar-blind ultraviolet light detector array 140. As shown in fig. 15-17, the solar-blind uv detector array 140 is composed of 64 (arranged in an 8 x 8 array) solar-blind uv detector units 40. The electrodes 42 in each solar blind ultraviolet detector unit 40 are electrically connected to form a mesh structure and serve as the common electrode 142 of the solar blind ultraviolet detector array 140. The distance D4' between the central axes of the two adjacent electrodes 42 is 100 micrometers, and the distance D4 between the central axes of the two adjacent electrodes 43 is 100 micrometers.
In the present invention, the size, shape and thickness of the oxide substrate are not limited at all, and the smaller the thickness of the oxide substrate is, the higher the detection sensitivity of the unit and array detector with the two-sided electrode structure is.
In the present invention, the size of the opening of the second electrode and the size of the first electrode are not limited, and may be designed according to the intensity of the probe light and the number of array elements.
In the present invention, the number of the units in the array detector is not limited, and the array detector can be designed according to the detection requirement.
Although the present invention has been described by way of preferred embodiments, the present invention is not limited to the embodiments described herein, and various changes and modifications may be made without departing from the scope of the present invention.
Claims (9)
1. A solar-blind uv detector unit, comprising:
an oxide substrate, wherein the forbidden band width of the oxide substrate is more than 4.4 electron volts;
the first electrode and the second electrode are arranged on the surface of the oxide substrate, the second electrode is provided with a through hole for receiving detection light, the first electrode and the second electrode are respectively arranged on two opposite sides of the oxide substrate, the first electrode and the second electrode are connected to two poles of a direct current power supply, the oxide substrate absorbs the detection light to generate electron-hole pairs, and an electric field applied between the first electrode and the second electrode by the direct current power supply enables the electron-hole pairs to be separated to form a loop current.
2. The solar-blind uv detector unit according to claim 1, wherein the central axes of the first and second electrodes are collinear and perpendicular to the surface of the oxide substrate.
3. Solar-blind uv detector unit according to any one of claims 1-2, wherein the through-hole of the second electrode is a circular hole or a polygonal hole.
4. Solar blind uv-light detector unit according to claim 3, wherein the first electrode is circular or polygonal.
5. The solar-blind uv detector unit according to claim 1, wherein the oxide substrate has a forbidden band width greater than 5.6 ev.
6. Solar blind uv-photodetector unit according to claim 5, characterized in that the material of the oxide substrate is LaAlO3、ZrO2Or MgO.
7. The solar-blind uv detector unit according to claim 1, wherein the material of the first or second electrode is gold, platinum, silver, aluminum, copper, graphite, indium tin oxide, strontium ruthenate or an alloy.
8. An array of solar-blind ultraviolet light detectors, comprising:
a plurality of solar blind uv-light detector units according to any one of claims 1 to 7;
wherein the plurality of solar blind ultraviolet detector units are arranged in an array.
9. The solar-blind ultraviolet light detector array of claim 8, wherein the second electrodes of the plurality of solar-blind ultraviolet light detector units are electrically connected to form a mesh structure.
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| CN115296736B (en) * | 2022-07-21 | 2023-07-25 | 中国科学院半导体研究所 | Solar blind ultraviolet communication detector, preparation method and communication method |
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| CN101055902A (en) * | 2007-04-29 | 2007-10-17 | 大连海事大学 | A PIN structure TiO2 base ultraviolet detector and its making method |
| CN102148281A (en) * | 2010-02-05 | 2011-08-10 | 中国科学院物理研究所 | Ultraviolet light detector with fast response, high sensitivity and low noise |
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| WO2009022378A1 (en) * | 2007-08-10 | 2009-02-19 | Osaka Electro-Communication University | Radiation detector |
| CN101425553B (en) * | 2008-10-09 | 2010-11-10 | 彩虹集团公司 | Manufacturing method for MgZnO based photoconduction type ultraviolet detector |
| CN101533868B (en) * | 2009-04-03 | 2013-08-14 | 中国科学院上海硅酸盐研究所 | Heterogenous pn junction solar blind ultraviolet detector |
| CN101969101B (en) * | 2010-09-30 | 2012-07-25 | 昆明物理研究所 | Phthalocyanine rare earth organic infrared semiconductor light guide detector |
| CN103268897B (en) * | 2013-05-30 | 2015-11-04 | 吉林大学 | There is ultraviolet detector and the preparation method of the broad stopband oxide semiconductor thin film of Passivation Treatment |
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| CN101055902A (en) * | 2007-04-29 | 2007-10-17 | 大连海事大学 | A PIN structure TiO2 base ultraviolet detector and its making method |
| CN102148281A (en) * | 2010-02-05 | 2011-08-10 | 中国科学院物理研究所 | Ultraviolet light detector with fast response, high sensitivity and low noise |
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