CN101055902A - A PIN structure TiO2 base ultraviolet detector and its making method - Google Patents
A PIN structure TiO2 base ultraviolet detector and its making method Download PDFInfo
- Publication number
- CN101055902A CN101055902A CNA2007100112045A CN200710011204A CN101055902A CN 101055902 A CN101055902 A CN 101055902A CN A2007100112045 A CNA2007100112045 A CN A2007100112045A CN 200710011204 A CN200710011204 A CN 200710011204A CN 101055902 A CN101055902 A CN 101055902A
- Authority
- CN
- China
- Prior art keywords
- type
- tio
- contact layer
- ultraviolet light
- light detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to a PIN structural TiO2 base ultraviolet light detector for ultraviolet light detector and its manufacturing method. The ultraviolet light detector comprises a conductive substrate, a N-type semiconductor contact layer, an intrinsic TiO2 active layer and a P-type wide-band-gap semiconductor contact layer. The manufacturing method of the ultraviolet light detector comprises the following step: preparing the N-type semiconductor contact layer on the conductive substrate after pretreatment; preparing the intrinsic TiO2 active layer on the N-type semiconductor contact layer; carrying out a partial etching to the around part of the active layer by using a dry etching technology; preparing the P-type contact layer on the etching part of the active layer; preparing a P-type ohmic electrode on the P-type contact layer; and preparing a N-type ohmic electrode on the conductive substrate. The invention has a plurality of advantages such as high external quantum efficiency and sensitivity, rapid response speed, small dark current, small and exquisite volume, cheap cost, and long service life. The film preparation technology is convenient and maturate. The interference of light sources except the ultraviolet ligh may be prevented.
Description
Technical field
The invention belongs to field of semiconductor devices, be specifically related to a kind of TiO that is used for the PIN structure of ultraviolet detector
2Base ultraviolet light detector and preparation method thereof.
Background technology
Ultraviolet light detector is the another dual-use detecting technique that occurs after infrared and laser sensing technology at present.This Detection Techniques are because of its excellent performance, and antijamming capability is strong, have been widely used in numerous areas such as aircraft, rocket and the detection of guided missile wake flame, ultraviolet mechanics of communication, sinter forging, flame early warning.Particularly at aerospace field, to important information in the universe---the detection of ultra-violet radiation, the construction of large space astronomical instrument etc. all presses for a kind of advanced person's ultraviolet detection device.Therefore, countries in the world are advanced in performance, reliable research, and the emphasis problem of research and development is classified in all solid state ultraviolet light detector with low cost as.
At present, the material that is used to prepare ultraviolet light detector is a lot, as dropping into the ultravioplet photomultiplier and the silica-based UV photodetector of commercial and Military Application.Photomultiplier need under high pressure be worked, and volume heaviness, efficient are low, and required circuit complexity, and this has limited its use to a great extent.Less as the general volume of silica-based UV photodetector of semi-conducting material by contrast, weight is lighter, and does not need complicated circuit.Because Si material mature technique makes it become the topmost material of making photo-detector.But as low-gap semiconductor, the Si sill not only absorbs ultraviolet light, and there is absorption equally in visible light, and this makes silica-based ultraviolet detector device have to use expensive filter, and this has just improved the manufacturing cost of detector greatly.And because ultraviolet light detector mostly is operated in extremely under the rugged environment, as flame combustion is monitored, in universe astronomical radiation surveyed or the like, these all are that Si detector institute is inefficient.
In order to address the above problem, keep total solids junction detector spare volume little simultaneously, lightweight advantage, people begin to pay close attention to some and only absorb ultraviolet light, and wide bandgap semiconductor materials high temperature resistant, that be adapted at using in the adverse circumstances.Wherein, SiC, GaN and diamond become the focus of people's research gradually because of its wide energy gap and excellent photoelectric properties.These materials not only energy gap are moderate, and antijamming capability is strong, be adapted at infrared or the visible light background under carry out ultraviolet detector, and have outstanding thermal conductance, thermal stability, chemical inertness, be fit to very much the manufacturing of opto-electronic device.In recent years, existing a plurality of patents are suggested (Kazushi Hayashi, Kobe; Takeshi Tachibana, Kobe; Yoshihiro Yokota, Kobe; Nobuyuki Kawakami, Kobe.Ultraviolet Sensor and Method for Manufacturing the Same, United States Patent:US 7,193,241 B2; Wang Linjun, Xia Yiben, Ma Ying, Su Qingfeng, Liu Jianmin. the preparation method of ultraviolet light detector, China: CN 1874009A; Gou-Chung Chi; Iinn-Kong Sheu; Meng-Che Chen; Min-Lum Lee.Ultraviolet Detector and Manufacture Method Thereof.United StatesPatent:US 7,009,185, B2; Zhao Degang, Yang Hui .PIN structure gallium nitride-base ultraviolet detector, China: CN 1747184A; Giampiero de Cesare; Fernanda Irrera; Fabrizio Palma.Thin Film Detector ofUltraviolet Radiation, with High Spectral Selectivity Option.United States Patent:5,682,037; Xie Jiachun, the beautiful .SiC Schottky of Wang Li ultraviolet detector, China: CN 2703329Y).But the preparation of these materials needs the manufacturing equipment and the backing material of application of expensive usually, and this is in the manufacturing cost that improves virtually, and preparation technology's difficulty of material itself is also bigger.
In order further to reduce cost, people focus on sight the TiO that is all wide bandgap semiconductor materials gradually
2On (bandwidth 3.2eV).This material is not only high temperature resistant, durability is strong, and mature preparation process, and technology difficulty is lower, adopts usual method (vapour deposition, liquid phase deposition, sol-gel process etc.) can make the thin-film material of high-quality, stable performance.And corresponding nano crystal thin film material also will have good characteristics such as highly porous, high surface, high photoconduction, high Optical Electro-Chemistry and catalytic activity.Just because of above-mentioned plurality of advantages, this material has been widely used in fields such as DSSC, photocatalysis Decomposition pollutant, self-cleaning film.In recent years, relevant TiO
2The correlative study of base ultraviolet light transducer day by day increases (MasayukiOkuya, Katsuyuki Shiozaki, Nobuyuki Horikawa, Tsuyoshi Kosugi, G.R.Asoka Kumara, J á no Madar á sz, Shoji Kaneko, Gy rgy Pokol.Porous TiO
2Thin films prepared by spraypyrolysis deposition (SPD) technique and their application to UV sensors, Solid StateIonics 172 (2004): 527-531; Fu Yao, Cao Wanghe.Preparation of transparent TiO
2Nanocrystalline film for UV sensor, Chinese Science Bulletin.2006,51 (14): 1657-1661; Sweet brave, Liu Caixia, Zhang Shuan, Xue Hailin, Dong Wei, Zhang Xindong, Zou Bo, Wu Fengqing, Xu Baokun, Chen Wei friend .TiO
2The photoelectric characteristic of film ultraviolet detector, semiconductor journal, 2005,26 (4): 795-797).
According to the difference of fundamental mode, semiconductor photo detector can be divided into photoconduction type sensitive detection parts and photovoltaic detector spare.Wherein, photovoltaic detector can be divided into p-n junction type, pin junction type and Schottky barrier type etc. again.Advantages such as it is higher that though the photoconduction type device has the interior lights electron gain, and response current is big,, there is the photoconduction duration in this device, so response speed is slower, and has the nonlinear change relation between its photoresponse and the incident light.So the detector that makes with above-mentioned these wide bandgap semiconductor materials is many based on the photovoltaic type photoelectric device.It is small and exquisite that they not only have volume, simple in structure, the advantage highly sensitive, that response characteristic is good, and structurally comprise a depletion layer that forms by Schottky barrier or p-n junction usually, because this depletion layer is in the inside of solid state device, so the photoelectric properties of device are difficult to be subjected to the interference of external environment.High in addition electric field only is applied on the depletion layer, so can obtain gratifying Effect on Detecting usually.At present, a kind of TiO that becomes the metal/semiconductor/metal (MSM structure) on basis with Schottky barrier has been proposed
2Ultraviolet light detector (Xue Hailin, Zhang Xindong, Liu Caixia, Dong Wei, Zhou Jingran, Ruan Shengping, Chen Weiyou, Xu Baokun. metal/semiconductor/metal structure TiO
2Ultraviolet light detector and preparation. China: CN 1828950A), this detector technology is simple, quantum efficiency is high, internal gain is low, response speed is fast, does not have high-temperature diffusion process, can obtain gratifying ultraviolet detection effect.
Compare with this Schottky barrier photo-detector, not only working bias voltage is low for p-n junction type photogenic voltage detector, output impedance and operating frequency height, and under given built-in voltage situation, saturated electric current is than the little several magnitude of the saturation current in the Schottky barrier diode in the p-n junction.In addition, for same semi-conducting material, big than in the Schottky barrier of the built-in voltage in the p-n junction.These advantages can remedy the deficiency that Schottky barrier type photo-detector potential barrier is on the low side, leakage current is big.In addition, for improving the quantum efficiency and the response speed of photodetector, can widen the thickness of depletion layer by the nearly intrinsic region of between p district and n district, adding a light donor doping, thereby form the pin structure.So not only can improve photoresponse intensity and response speed greatly, and leakage current and noise are significantly reduced.But, because TiO
2Be N type electric conducting material, common preparation method is difficult to obtain P type TiO again
2Therefore electric conducting material, wants to form by pn type or pin type TiO on technology
2Base junction type light-detecting device is very difficult.
Summary of the invention
At above technical barrier, the purpose of this invention is to provide a kind of new Ti O of with low cost, stable performance
2The ultraviolet light detector of base pin junction type, and a kind of method of making this detector is provided.The core of this detector is by P molded breadth gap semiconductor film, N type semiconductor film and the intrinsic TiO between the two
2Active area constitutes the pin structure.
Technical scheme of the present invention is PIN structure Ti O
2Base ultraviolet detector comprises conductive substrates 1; Be positioned at the N type contact layer 2 on the conductive substrates 1; Be positioned at the intrinsic TiO on the N type contact layer 2 as the UV Absorption layer
2 Active layer 3; Be positioned at intrinsic TiO
2P type contact layer 4 on the active layer 3; At least one is positioned at P type Ohmic electrode 5 on the P type contact layer 4 and at least one and is positioned at N type Ohmic electrode 6 on the conductive substrates 1.Detector surface has detecting area, and this search coverage has at least one subregion and is exposed to outside the P type Ohmic electrode 5.
N type contact layer 2, intrinsic TiO
2The preparation method of active layer 3 and P type contact layer 4 comprises sol-gel process, liquid phase deposition, vapour deposition process, magnetron sputtering.
The preparation method of P type Ohmic electrode 5 and N type Ohmic electrode 6 comprises sputtering technology, gas-phase deposition, ion plating, evaporation process.
The TiO that the present invention proposes
2The preparation process of base PIN junction type ultraviolet light detector is as follows:
A, conductive substrates 1 is carried out preliminary treatment, preprocess method is, conductive substrates (1) is behind 10% the NaOH solution ultrasonic cleaning 10-20min, in degreaser (NaOH 76g/L, Na through acetone and mass fraction
3PO
426g/L, Na
2CO
3Boil 30g/L), clean up and natural airing in the deionized water of boiling then, the component of degreaser and content are NaOH:76g/L, Na
3PO
4: 26g/L, Na
2CO
3: 30g/L.
B, on pretreated conductive substrates 1 preparation N type contact layer 2, the area of this N type basal layer 2 is less than the area of conductive substrates 1;
C, on N type contact layer 2 preparation intrinsic TiO
2 Active layer 3;
D, employing dry etching technology are to intrinsic TiO
2Carry out partial etching around the active layer 3;
E, prepare P type contact layer 4 in the etched portions of intrinsic active layer 3;
F, on P type contact layer 4, make P type Ohmic electrode 5;
G, on conductive substrates 1, make N type Ohmic electrode 6;
Make PIN structure Ti O
2Base ultraviolet detector.
N type contact layer 2 is N type TiO
2, N type NiO, N type ZnO, N type SnO
2, N type SiO
2A kind of in the material.Thickness 0.5-10 μ m, electron concentration is greater than 1 * 10
18Cm
-3
Intrinsic TiO wherein
2 Active layer 3 is TiO
2Nano-tube film or polycrystalline particle film or monocrystal thin films material, thickness 0.1-10 μ m.
Intrinsic TiO
2The step width that forms after etching around the active layer 3 is 1-5mm, and thickness is 0.05-1 μ m.
P type contact layer 4 is P type NiO, P type ZnO, P type SnO
2And P type TiO
2In a kind of, thickness 0.05-1 μ m, free carrier concentration is less than 1 * 10
16Cm
-3
Because the photo-generated carrier that results from P district and N district must diffuse to the space charge region earlier could quick drift motion under the internal electric field effect, therefore, time response is slower, can produce delayed current.Should reduce the thickness of P type contact layer 4 as far as possible, increase intrinsic TiO
2The thickness of active layer 3 makes light absorption mainly occur in the space charge region.Simultaneously, guarantee that the thickness of active layer 3 is not crossed greatly, enough strong to guarantee the depletion layer electric field, can effectively suppress the compound of photo-generated carrier like this, improve the response speed of detector 1.
P type Ohmic electrode 5 and N type Ohmic electrode 6 are dots structure or loop configuration or curvilinear structures, are made by Au or Pd or Pt or Ni or Al, and thickness is 0.1-5 μ m.
The present invention adopts intrinsic TiO
2Film is as active area, and P molded breadth gap semiconductor film is as P type contact layer, and the N type semiconductor film has constituted the PIN structure devices as N type contact layer.In the device, intrinsic TiO
2Active layer has increased the width of depletion region greatly, and when wavelength was mapped on the device less than the ultraviolet lighting of 380nm, incident light was by intrinsic TiO
2After active layer absorbed, it was right to produce light induced electron-hole, and these light induced electron-holes are to effectively being separated under the effect of internal electric field, and was scanned out depletion region, formed photogenerated current, thereby had avoided right compound in a large number in light induced electron-hole.Because the P type contact layer of detector is covered by P type Ohmic electrode, actual light accepting part is divided into the TiO that is exposed to the outside
2Intrinsic layer, it is right that this just makes that P type contact layer can not produce light induced electron-hole, thereby avoided the generation of delayed current, and therefore, the detector speed of photoresponse is fast, and stability is high.
The invention has the beneficial effects as follows to have external quantum efficiency and highly sensitive, plurality of advantages such as response speed is fast, dark current is little, volume is small and exquisite.The easy maturation of thin film preparation process can adopt preparation method cheaply, prepares nano-TiO as methods such as sol-gel, liquid deposition, vapour depositions
2And semiconductive thin film, the titanium source is comparatively cheap butyl titanate, titanium tetrachloride or titanyl sulfate.Prepared detector is not only with low cost, and long service life, and the ultraviolet light that only wavelength is shorter than 380nm has highly sensitive response output, and to infrared and visible light without any response, can prevent other interference of light sources except that ultraviolet light.
Description of drawings
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
Fig. 1 is the TiO of the PIN structure that proposes of the present invention
2The generalized section of base ultraviolet light detector.
Fig. 2 is the TiO of the PIN structure that proposes of the present invention
2The floor map of base ultraviolet light detector.
Fig. 3 is TiO in the embodiments of the invention 1
2The uv-visible absorption spectra analysis chart of film.
Fig. 4 is TiO in the embodiments of the invention 2
2: the uv-visible absorption spectra analysis chart of Zn film.
Among the figure, 1, conductive substrates, 2, N type contact layer, 3, intrinsic TiO
2Active layer, 4, P type contact layer, 5, P type Ohmic electrode, 6, N type Ohmic electrode.
Embodiment
Intrinsic TiO
2The preparation of colloidal sol: with the butyl titanate is presoma.Butyl titanate and diethanol amine are dissolved in absolute ethyl alcohol (account for total amount 60%), stir 30-60min and obtain mixed solution.In addition with deionized water and absolute ethyl alcohol (account for total amount 40%) mixed evenly after, under continuous stirring, dropwise splash in the above-mentioned mixed liquor, drip and finish the back and continue to stir 30-120min, obtain even, transparent faint yellow TiO
2Colloidal sol.Reactant ratio: butyl titanate: absolute ethyl alcohol: deionized water: diethanol amine=20: 100: 1: 6 (volume ratios).
ZnO: the preparation of Al colloidal sol: with a certain amount of (CH
3COO)
2Zn2H
2O is dissolved in the mixed solution of EGME and monoethanolamine (MEA), [Zn
2+]: [MEA]=1: 1, be made into the mixed solution that zinc ion concentration is 0.5-1.0mol/L.In 50-70 ℃ of water-bath, fully stir then and promptly obtained stable performance, water white Sol A in 1-5 hour.In the ratio of 1-3wt% with an amount of AlCl
36H
2O is dissolved in the solution B of making transparent 0.1-0.3mol/L in the EGME, and splashes in the Sol A in the continuous stirring, obtains ZnO: Al colloidal sol.
The preliminary treatment of conductive substrates: the ITO electro-conductive glass is behind 10% the NaOH solution ultrasonic cleaning 10-20min, in degreaser (NaOH 76g/L, Na through acetone and mass fraction
3PO
426g/L, Na
2O
3Boil 30g/L), in the deionized water of boiling, clean up and natural airing then.
Do mask with tinfoil paper, will shelter from through the edge of pretreated ITO electro-conductive glass, cover width is 2mm.With the ZnO after the ageing: Al colloidal sol adopts dipping-pulling method to prepare ZnO on conductive substrates: Al film, pull rate 2mm/s.Behind each membrane substrate put into temperature and be 80-120 ℃ the dry 10-20min of baking oven, promptly finish and once be coated with membrane process.Increase film thickness by the increase number of times of filming.With the film 500-900 ℃ of roasting 30-120min in resistance furnace for preparing, film cools to room temperature with the furnace afterwards, and obtaining thickness is 0.2-1 μ m, and resistivity is 5 * 10
-2The N type ZnO of Ω cm: Al film.
Adopt same procedure to utilize intrinsic TiO
2Colloidal sol is at N type ZnO: preparation intrinsic TiO on the Al film
2Film, thickness 0.2-2 μ m.Adopt the intrinsic TiO of dry etching technology to making
2Carry out partial etching around the thin layer, form wide 1-5mm, the step of high 0.05-1 μ m.
Shelter from TiO with tinfoil paper without etching
2Film and conductive substrates zone only utilize chemical gaseous phase depositing process to prepare the P type ZnO of thickness for 0.05-1 μ m in stepped area: the P film.Detailed process is: be the zinc source with high-purity diethyl zinc (purity＞991999%) respectively, and O
2(purity＞991999%) as oxygen source, N
2As carrier gas (purity＞991999%), high-purity P
2O
5Powder is as the doped source of phosphorus.Utilize hot vaporizer to make P
2O
5Distillation, the heating-up temperature of evaporator is between 600～900 ℃.Growth room's pressure is 133Pa, and growth temperature is 350-550 ℃, the P type ZnO that makes: the hole concentration 1.5 * 10 of P film
18Cm
-3, resistivity 4.82 Ω cm.
Take off conductive substrates tinfoil paper all around, shelter from ZnO and TiO with tinfoil paper in addition
2Film surface, utilize magnetron sputtering technique at the Al of conductive substrates edge sputter thickness 0.1-5 μ m as N type Ohmic electrode.
Do mask with tinfoil paper, the Al after the sputter is sheltered from, the tinfoil paper that will be covered in addition the ZnO surface takes off, utilize magnetron sputtering technique at the Au of the ZnO film surface sputtering thickness 0.1-5 μ m that exposes as P type Ohmic electrode, obtain Al-N
+/ ZnO-TiO
2-P/ZnO-Au structure.
N type Ohmic electrode is connected with lead respectively with P type Ohmic electrode, carries out at last that tube core is cut apart, pressure welding, encapsulation, makes pin structure Ti O
2Base ultraviolet light detector.
Fig. 3 is prepared TiO
2The uv-visible absorption spectra of film, as can be seen, film does not then absorb the visible light of wavelength greater than 380nm substantially to the very strong absorption of ultraviolet light existence of wavelength less than 380nm.
Utilize bias voltage circuit to provide reverse bias voltage to ultraviolet light detector.When ultraviolet lighting is mapped on the detector film, intrinsic TiO
2It is right to produce light induced electron-hole in the film, and under the effect of internal electric field, light induced electron, hole drift about fast to P district and N district respectively, and import external circuit respectively into through P type and N type Ohmic electrode, produce photo-signal, thereby reach the purpose of ultraviolet detector.
TiO
2: the preparation of Zn colloidal sol: in the ratio of 1-4wt% with an amount of Zn (NO
3)
2Be dissolved in the 20-40ml absolute ethyl alcohol, add 10-15ml butyl titanate and 3-4.5ml diethanol amine again, stir 30-120min and obtain mixed solution.In addition that 0.5-1ml deionized water and 10-30ml absolute ethyl alcohol is evenly mixed, under continuous stirring, dropwise splash in the above-mentioned mixed liquor, drip the end back and continue to stir 30-120min, obtain even, transparent TiO
2: Zn colloidal sol.Reactant volume ratio: butyl titanate: absolute ethyl alcohol: deionized water: diethanol amine=20: 100: 1: 6.
The preprocess method of conductive substrates is with embodiment 1.
Do mask with tinfoil paper, will shelter from through the edge of pretreated ITO electro-conductive glass, the covering width is 2mm.Adopt electron-beam vapor deposition method to prepare N type ZnO: the Al film, concrete grammar is: selecting purity for use is 99.7% ZnO powder, by mass ratio is that to mix purity be 99.99% alumina powder to 1-3%, fully grinding mixes it, under the pressure of 10MPa, be pressed into target then through 20-40s, and placing the coating machine crucible, the ITO electro-conductive glass is placed on the substrate frame.Feed minor amounts of oxygen, the control partial pressure of oxygen is 1 * 10
-2Pa, line are 40mA, and evaporation makes N type ZnO under 150-300 ℃ underlayer temperature: Al transparent membrane, film resiativity 6 * 10
-3Ω cm.
Adopt intrinsic TiO among the embodiment 1
2The preparation method of film utilizes TiO
2: Zn colloidal sol is at N type ZnO: prepare TiO on the Al film
2: Zn film, thickness 0.2-2 μ m.Adopt the TiO of dry etching technology to making
2: carry out partial etching around the Zn thin layer, form wide 1-5mm, the step of high 0.05-1 μ m.
P type ZnO: the preparation of P film contact layer and P, N type Ohmic electrode and the assembling of ultraviolet light detector device are with embodiment 1.
Fig. 4 is prepared TiO
2: the uv-visible absorption spectra of Zn film, film does not then absorb the visible light of wavelength greater than 380nm substantially to the very strong absorption of ultraviolet light existence of wavelength less than 380nm.
Intrinsic TiO
2The preparation of colloidal sol and the preliminary treatment of conductive substrates are with embodiment 1.
Do mask with tinfoil paper, the edge of pretreated ITO electro-conductive glass is sheltered from, the covering width is 2mm.On the ITO electro-conductive glass, deposit the thick In film of 10nm by hot vapour deposition method.With high-purity diethyl zinc (purity＞991999%) as zinc source, O
2(purity＞991999%) as oxygen source, N
2As carrier gas (purity＞991999%), utilize chemical vapour deposition technique on the In film, to prepare the ZnO film of thickness for 0.1-1 μ m.Growth room's pressure is 133Pa, and growth temperature is 350-550 ℃.The ZnO/In film that makes after the deposition obtains N type ZnO: the In film through 600-1000 ℃ of heat treatment 30-120min.
Utilize the preparation method of embodiment 1, at N type ZnO: the intrinsic TiO of preparation thickness 0.2-2 μ m on the In film
2Active layer.Adopt the intrinsic TiO of dry etching technology to making
2Carry out partial etching around the thin layer, form wide 1-5mm, the step of high 0.05-1 μ m.
Other preparation process of device is with embodiment 1.
ZnO: Al colloidal sol, TiO
2The preparation of colloidal sol, the preliminary treatment of conductive substrates, N type ZnO: Al contact layer, TiO
2The preparation of intrinsic active layer is with embodiment 1.
The preparation method of P type contact layer is: utilize the ultrasonic atomizatio pyrolysis technique, respectively with Zn (CH
3COO)
22H
2O, Al (NO
3)
39H
2O and CH
3COONH
4Solution is Zn, Al and N source.Press Zn: Al=20: 3 proportional arrangement solution, Zn (CH in the solution
3COO)
22H
2O concentration is 0.1mol/L.With high-purity N
2Be carrier gas, after the ultrasonic atomizer atomizing, at TiO
2The ZnO of preparation thickness 0.05-1 μ m on the film: N, Al film, growth temperature 350-550 ℃, film growth time 10-60min.Take out film after naturally cooling to room temperature.Film carrier concentration 4.6 * 10
18Cm
-3
Shelter from ZnO and TiO with tinfoil paper
2Film surface, utilize magnetron sputtering technique at the Al of ITO conductive substrates edge sputter thickness 0.1-5 μ m as N type Ohmic electrode.
Do mask with tinfoil paper, the Al after the sputter is sheltered from, the tinfoil paper that will be covered in addition the ZnO surface takes off, utilize magnetron sputtering technique at the Au of the ZnO film surface sputtering thickness 0.1-5 μ m that exposes as P type Ohmic electrode, obtain Al-N
+/ ZnO-TiO
2-P/ZnO-Au structure.
N type Ohmic electrode, P type Ohmic electrode are connected with lead respectively, carry out at last that tube core is cut apart, pressure welding, encapsulation, make the TiO of pin structure
2Base ultraviolet light detector.
N type ZnO: Al contact layer, TiO
2Intrinsic active layer, P type ZnO: the preparation of P contact layer is with embodiment 1.
N type Ohmic electrode and P type Ohmic electrode all are that raw material make by magnetron sputtering method with Au.
The assembling of device is with embodiment 1.
Claims (11)
1, a kind of TiO of pin structure
2Base ultraviolet light detector is characterized in that, comprises conductive substrates (1), is positioned at the N type contact layer (2) on the conductive substrates (1), is positioned at the intrinsic TiO as the UV Absorption layer on the N type contact layer (2)
2Active layer (3) is positioned at intrinsic TiO
2P type contact layer (4) on the active layer (3), at least one is positioned at P type Ohmic electrode (5) on the P type contact layer (4) and at least one and is positioned at N type Ohmic electrode (6) on the conductive substrates (1).
2, the TiO of a kind of pin structure according to claim 1
2Base ultraviolet light detector is characterized in that, described conductive substrates (1) is ITO electro-conductive glass or FTO electro-conductive glass, and thickness is 0.1-2mm.
3, the TiO of a kind of pin structure according to claim 1
2Base ultraviolet light detector is characterized in that, described N type contact layer (2) is N type TiO
2, N type NiO, N type ZnO, N type SnO
2Or N type SiO
2A kind of in the material, thickness is 0.5-10 μ m, electron concentration is greater than 1 * 10
18Cm
-3, and the area of N type contact layer (2) is less than the area of conductive substrates (1).
4, the TiO of a kind of pin structure according to claim 1
2Base ultraviolet light detector is characterized in that, described intrinsic TiO
2Active layer (3) is TiO
2Nano-tube film or nano-multicrystal particle film or monocrystal thin films material, center thickness 0.1-10 μ m, the step width that forms after etching all around is 1-5mm, thickness is 0.05-1 μ m.
5, the TiO of a kind of pin structure according to claim 1
2Base ultraviolet light detector is characterized in that, described P type contact layer (4) is P type NiO, P type ZnO, P type SnO
2Or P type TiO
2A kind of in the material material, thickness is 0.05-1 μ m, free carrier concentration is less than 1 * 10
16Cm
-3
6, the TiO of a kind of pin structure according to claim 1
2Base ultraviolet light detector is characterized in that, described P type Ohmic electrode (5) and N type Ohmic electrode (6) are dots structure or loop configuration or curvilinear structures, is made by Au or Pd or Pt or Ni or Al, and thickness is 0.1-5 μ m.
7, the TiO of a kind of pin structure according to claim 1
2Base ultraviolet light detector is characterized in that, described detector surface has search coverage, and this search coverage has at least one subregion and is exposed to outside the P type Ohmic electrode (5).
8, the TiO of the described a kind of pin structure of preparation claim 1
2The method of base ultraviolet light detector is characterized in that, preparation process comprises: conductive substrates (1) is carried out preliminary treatment; Go up preparation N type contact layer (2) in conductive substrates (1), the area of this N type contact layer (2) is less than conductive substrates (1) area; Go up preparation intrinsic TiO at N type contact layer (2)
2Active layer (3); Adopt dry etching technology to intrinsic TiO
2Active layer (3) carries out partial etching all around; At intrinsic TiO
2The etched portions of active layer (3) prepares P type contact layer (4); Go up making P type Ohmic electrode (5) at P type contact layer (4): go up in conductive substrates (1) and make N type Ohmic electrode (6); Make pin structure Ti O
2Base ultraviolet detector.
9, the TiO of a kind of pin structure according to claim 8
2The preparation method of base ultraviolet light detector is characterized in that, the preprocess method of described conductive substrates (1) is, conductive substrates (1) is behind 10% the NaOH solution ultrasonic cleaning 10-20min, in degreaser (NaOH 76g/L, Na through acetone and mass fraction
3PO
426g/L, Na
2CO
3Boil 30g/L), clean up and natural airing in the deionized water of boiling then, the component of degreaser and content are NaOH:76g/L, Na
3PO
4: 26g/L, Na
2CO
3: 30g/L.
10, the TiO of a kind of pin structure according to claim 8
2The preparation method of base ultraviolet light detector is characterized in that, described N type contact layer (2), intrinsic TiO
2The preparation method of active layer (3) and P type contact layer (4) comprises sol-gel process, liquid phase deposition, vapour deposition process, magnetron sputtering method.
11, the TiO of a kind of pin structure according to claim 8
2The base ultraviolet light detector preparation method is characterized in that, the preparation method of described P type Ohmic electrode (5) and N type Ohmic electrode (6) comprises sputtering technology, gas-phase deposition, ion plating, evaporation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100112045A CN100468784C (en) | 2007-04-29 | 2007-04-29 | A PIN structure TiO2 base ultraviolet detector and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100112045A CN100468784C (en) | 2007-04-29 | 2007-04-29 | A PIN structure TiO2 base ultraviolet detector and its making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101055902A true CN101055902A (en) | 2007-10-17 |
| CN100468784C CN100468784C (en) | 2009-03-11 |
Family
ID=38795619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100112045A Expired - Fee Related CN100468784C (en) | 2007-04-29 | 2007-04-29 | A PIN structure TiO2 base ultraviolet detector and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100468784C (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427096A (en) * | 2011-11-02 | 2012-04-25 | 西南交通大学 | Preparation method of wide-spectrum and strong-absorption surface-photovoltage type photodetector |
| CN102496639A (en) * | 2011-12-21 | 2012-06-13 | 中国科学技术大学 | Plasmon enhancement type solar cell with intermediate bands and photoelectric conversion film material of solar cell |
| CN102544137A (en) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | Sapphire-substrate-based wide-band film type photodetector |
| CN102593228A (en) * | 2012-04-20 | 2012-07-18 | 中国科学院上海技术物理研究所 | Wide-waveband thin-film type photoelectric detector based on Pt/Ti/SiO2/Si substrate |
| CN102651422A (en) * | 2011-10-10 | 2012-08-29 | 京东方科技集团股份有限公司 | Short wavelength photodetector and manufacturing method thereof |
| CN105242390A (en) * | 2015-10-27 | 2016-01-13 | 西安交通大学 | Multi-ring-band MEMS confocal pinhole detector and measurement method thereof |
| CN105720117A (en) * | 2014-12-02 | 2016-06-29 | 中国科学院大连化学物理研究所 | TiO2 out-phase junction ultraviolet (UV)/deep ultraviolet (DUV) detector device having built-in electric field and preparation |
| CN106920360A (en) * | 2017-03-23 | 2017-07-04 | 南通大学 | Remote fire method of real-time and system based on AlGaN base solar blind ultraviolet detectors |
| CN106997913A (en) * | 2016-01-22 | 2017-08-01 | 中国科学院物理研究所 | Solar blind UV detector cells and array |
| CN106997908A (en) * | 2016-01-22 | 2017-08-01 | 中国科学院物理研究所 | It can be seen that blind UV detector cells and array |
| CN109148635A (en) * | 2018-08-31 | 2019-01-04 | 西安理工大学 | CuAlO2/Ga2O3Ultraviolet photodiode and preparation method |
| CN109524497A (en) * | 2018-11-07 | 2019-03-26 | 西安交通大学 | A kind of transparent super fast response self energizing ultraviolet detector and preparation method thereof |
| CN110335876A (en) * | 2019-04-29 | 2019-10-15 | 上海天马微电子有限公司 | Radiation image detection panel and preparation method thereof, Radiological image detection |
| CN111463308A (en) * | 2020-05-13 | 2020-07-28 | 厦门大学 | Silicon carbide coaxial ultraviolet photoelectric detector and preparation method thereof |
| CN113725310A (en) * | 2021-08-13 | 2021-11-30 | 中国科学院上海技术物理研究所 | Multi-junction germanium-based long-wave infrared detector and preparation method thereof |
| CN114464693A (en) * | 2022-04-12 | 2022-05-10 | 北京中科海芯科技有限公司 | Photoelectric detector and preparation method thereof |
| WO2023236403A1 (en) * | 2022-06-06 | 2023-12-14 | 深圳市吉迩科技有限公司 | Heating element and preparation method therefor |
-
2007
- 2007-04-29 CN CNB2007100112045A patent/CN100468784C/en not_active Expired - Fee Related
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651422A (en) * | 2011-10-10 | 2012-08-29 | 京东方科技集团股份有限公司 | Short wavelength photodetector and manufacturing method thereof |
| CN102427096A (en) * | 2011-11-02 | 2012-04-25 | 西南交通大学 | Preparation method of wide-spectrum and strong-absorption surface-photovoltage type photodetector |
| CN102427096B (en) * | 2011-11-02 | 2013-05-22 | 西南交通大学 | Preparation method of wide-spectrum and strong-absorption surface-photovoltage type photodetector |
| CN102496639A (en) * | 2011-12-21 | 2012-06-13 | 中国科学技术大学 | Plasmon enhancement type solar cell with intermediate bands and photoelectric conversion film material of solar cell |
| CN102496639B (en) * | 2011-12-21 | 2014-05-14 | 中国科学技术大学 | Plasmon enhancement type solar cell with intermediate bands and photoelectric conversion film material of solar cell |
| CN102544137A (en) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | Sapphire-substrate-based wide-band film type photodetector |
| CN102593228A (en) * | 2012-04-20 | 2012-07-18 | 中国科学院上海技术物理研究所 | Wide-waveband thin-film type photoelectric detector based on Pt/Ti/SiO2/Si substrate |
| CN105720117B (en) * | 2014-12-02 | 2017-12-05 | 中国科学院大连化学物理研究所 | A kind of TiO with built in field2Out-phase knot is ultraviolet/deep ultraviolet detector part and preparation |
| CN105720117A (en) * | 2014-12-02 | 2016-06-29 | 中国科学院大连化学物理研究所 | TiO2 out-phase junction ultraviolet (UV)/deep ultraviolet (DUV) detector device having built-in electric field and preparation |
| CN105242390A (en) * | 2015-10-27 | 2016-01-13 | 西安交通大学 | Multi-ring-band MEMS confocal pinhole detector and measurement method thereof |
| CN106997913B (en) * | 2016-01-22 | 2021-05-25 | 中国科学院物理研究所 | Solar blind ultraviolet light detector unit and array |
| CN106997913A (en) * | 2016-01-22 | 2017-08-01 | 中国科学院物理研究所 | Solar blind UV detector cells and array |
| CN106997908B (en) * | 2016-01-22 | 2021-05-25 | 中国科学院物理研究所 | Visible blind ultraviolet detector unit and array |
| CN106997908A (en) * | 2016-01-22 | 2017-08-01 | 中国科学院物理研究所 | It can be seen that blind UV detector cells and array |
| CN106920360B (en) * | 2017-03-23 | 2019-04-19 | 南通大学 | Remote fire method of real-time and system based on AlGaN base solar blind ultraviolet detector |
| CN106920360A (en) * | 2017-03-23 | 2017-07-04 | 南通大学 | Remote fire method of real-time and system based on AlGaN base solar blind ultraviolet detectors |
| CN109148635B (en) * | 2018-08-31 | 2020-07-28 | 西安理工大学 | CuAlO2/Ga2O3Ultraviolet photodiode and preparation method |
| CN109148635A (en) * | 2018-08-31 | 2019-01-04 | 西安理工大学 | CuAlO2/Ga2O3Ultraviolet photodiode and preparation method |
| CN109524497B (en) * | 2018-11-07 | 2020-10-27 | 西安交通大学 | Transparent ultrafast response self-powered ultraviolet detector and preparation method thereof |
| CN109524497A (en) * | 2018-11-07 | 2019-03-26 | 西安交通大学 | A kind of transparent super fast response self energizing ultraviolet detector and preparation method thereof |
| CN110335876A (en) * | 2019-04-29 | 2019-10-15 | 上海天马微电子有限公司 | Radiation image detection panel and preparation method thereof, Radiological image detection |
| CN111463308A (en) * | 2020-05-13 | 2020-07-28 | 厦门大学 | Silicon carbide coaxial ultraviolet photoelectric detector and preparation method thereof |
| CN111463308B (en) * | 2020-05-13 | 2021-09-07 | 厦门大学 | Silicon carbide coaxial ultraviolet photoelectric detector and preparation method thereof |
| CN113725310A (en) * | 2021-08-13 | 2021-11-30 | 中国科学院上海技术物理研究所 | Multi-junction germanium-based long-wave infrared detector and preparation method thereof |
| CN113725310B (en) * | 2021-08-13 | 2024-03-26 | 中国科学院上海技术物理研究所 | Multi-junction germanium-based long-wave infrared detector and preparation method thereof |
| CN114464693A (en) * | 2022-04-12 | 2022-05-10 | 北京中科海芯科技有限公司 | Photoelectric detector and preparation method thereof |
| WO2023236403A1 (en) * | 2022-06-06 | 2023-12-14 | 深圳市吉迩科技有限公司 | Heating element and preparation method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100468784C (en) | 2009-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100468784C (en) | A PIN structure TiO2 base ultraviolet detector and its making method | |
| Leung et al. | Progress and design concerns of nanostructured solar energy harvesting devices | |
| CN105870334B (en) | Efficient perovskite single crystal optical detector and preparation method thereof | |
| Peng et al. | Hexagonal TiO 2 microplates with superior light scattering for dye-sensitized solar cells | |
| CN104993059B (en) | A kind of silicon substrate perovskite heterojunction solar battery and preparation method thereof | |
| CN101853894B (en) | Nanowire heterojunction array-base ultraviolet light detector and preparation method thereof | |
| CN104659123A (en) | Compound film solar battery and manufacturing method thereof | |
| CN101697319B (en) | Dye-sensitized anode of solar battery light and preparation method thereof | |
| JP2013055178A (en) | Thin film solar cell and manufacturing method of the same | |
| CN109037374A (en) | Based on NiO/Ga2O3Ultraviolet photodiode and preparation method thereof | |
| TWI299577B (en) | ||
| JP2015233139A (en) | Solar cell containing buffer layer formed by atomic layer deposition method and manufacturing method of the same | |
| CN102208479A (en) | Nano coaxial-cable heterojunction array base ultraviolet detector and manufacturing method thereof | |
| CN110718634A (en) | Solar cell with electronic transmission layer of grating array structure and preparation method thereof | |
| TW201907574A (en) | Two-dimensional electronic devices and related fabrication methods | |
| KR101134595B1 (en) | Substrate of photovoltaic cell, method for manufacturing the same and photovoltaic cell | |
| CN110611030A (en) | Perovskite solar cell with array structure electron transport layer and preparation method thereof | |
| CN102222572A (en) | Preparation method of light anode with a composite nano-wire array/ nano-crystalline porous membrane structure | |
| CN109755342A (en) | A kind of Direct-type X-ray detector and preparation method thereof | |
| CN107658384B (en) | Organic-inorganic multi-heterojunction nano-array-based broad-spectrum photoelectric detector and preparation method thereof | |
| CN209104182U (en) | Amorphous silicon/crystalline silicon heterojunction solar battery | |
| CN111244194A (en) | ZnO/Cu based on aluminum nanoparticle local surface plasma effect2O heterojunction ultraviolet light detector | |
| CN104851942B (en) | The preparation method of ZnO/I doping ZnO core/shell structure nano-wire array | |
| CN101916827B (en) | Preparation method of organic/titanium dioxide composite ultraviolet detector | |
| CN111139449A (en) | Zinc oxide based transparent electrode photoelectric detector and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090311 Termination date: 20110429 |