CN102544137A - Sapphire-substrate-based wide-band film type photodetector - Google Patents
Sapphire-substrate-based wide-band film type photodetector Download PDFInfo
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- CN102544137A CN102544137A CN2012100193698A CN201210019369A CN102544137A CN 102544137 A CN102544137 A CN 102544137A CN 2012100193698 A CN2012100193698 A CN 2012100193698A CN 201210019369 A CN201210019369 A CN 201210019369A CN 102544137 A CN102544137 A CN 102544137A
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Abstract
The invention discloses a gem-substrate-based wide-band film type photodetector which is characterized by comprising a sapphire substrate, an n-conductivity type Mn-Co-Ni-O film, and a p-conductivity type Mn-Co-Ni-O film, wherein a top electrode is arranged on partial surface of the p-conductivity type Mn-Co-Ni-O film; the film is etched to the exposed part of the n-conductivity type Mn-Co-Ni-O film; and a bottom electrode is arranged at the exposed part, thereby preparing a pn node, generating a photovoltaic effect, and realizing the detection for the ultraviolet-visible-infrared wide band.
Description
Technical field
The present invention relates to a kind of broadband film-type photodetector, particularly a kind of based on Sapphire Substrate, go out the structure of the novel broadband photodetector of pn knot with polynary transition metal oxide Mn-Co-Ni-O film preparation.
Background technology
Sensitive detection parts are photoelectric technology development key and basis, play an important role in science and technology and aspect such as civilian.Photodetector is the highest one type of detector medium sensitivity, has the detectivity height, the characteristics that response speed is fast, but its work generally all has the certain wavelengths scope.Generally, gallium nitride (GaN) detector operation wave band is 250～400nm, and Si base detector operation wave band is 400～800nm, and indium gallium arsenic (InGaAs) detector operation wave band is 900～1700nm.Pursuing development broadband photodetector is the direction that people make great efforts always, develops the new material system for this reason, and (250～1700nm) will exist very important actual application value further to widen the detector operation wave band.
Polynary transition metal oxide Mn-Co-Ni-O material is unique a kind of all band temperature-sensitive radiation detection material of finding at present.This oxide has semiconductor property, and the charge carrier number was few when temperature was low, thereby its resistance value is higher; Along with the rising of temperature, the charge carrier number increases, and its resistance value reduces.Has 200 nanometers-50 micron extremely broad photoresponse wave band with its prepared device, long and advantages of cheap price of life-span.The Mn-Co-Ni-O material has high temperature coefficient of resistance; Its sensitive characteristic has important use at aspects such as thermal-sensitive electric resistance device, Infrared Detectorss; And discover that it has abundant physical characteristic; Utilize the photoelectric characteristic of this material and the design of device architecture, can produce photovoltaic effect, realize of the application of Mn-Co-Ni-O material as the photodetection material.This patent adopts the preparation of Mn-Co-Ni-O transition metal oxide film and the design of device architecture, to realize the broadband (target of 250～1700nm) detections.
Summary of the invention
The invention provides a kind of structure of the broadband film-type photodetector based on Sapphire Substrate.Utilize the difference of Mn-Co-Ni-O thin-film material conduction type; Adopt wet chemistry method on Sapphire Substrate, to prepare the Mn-Co-Ni-O film overlaying structure that conduction type is p type and n type; Form the pn knot; When light incident is arranged photovoltaic effect can take place, realize ultraviolet-visible-infrared broadband detection.
Below we combine accompanying drawing that this patent is done detailed elaboration.
The structure of detector is as shown in Figure 1; Comprise: sapphire sheet substrate 1, conduction type are the Mn-Co-Ni-O film 2 of n type, Mn-Co-Ni-O film 3, top electrode 4 and the hearth electrode 5 that conduction type is the p type; It is characterized in that: the conduction type that on sapphire sheet substrate 1, prepares thickness successively and be 100 nanometers to 9 micron is the Mn-Co-Ni-O film 2 of n type, and thickness is that the conduction type of 100 nanometers to 9 micron is the Mn-Co-Ni-O film 3 of p type; Be to make a conductive layer as top electrode 4 on the part face of Mn-Co-Ni-O film 3 of p type at conduction type, hearth electrode 5 is produced on removes Mn-Co-Ni-O film 3 that a part of conduction type is the p type and the conduction type of 1/10-2/3 thickness is that the conduction type that exposes behind the Mn-Co-Ni-O film 2 of n type is on the Mn-Co-Ni-O film 2 of n type.
The preparation of devices method is as shown in Figure 2, comprising:
1. the cleaning of substrate:
Select Sapphire Substrate, clean, remove the impurity and the dirt of substrate surface, then dry for standby with conventional method.
2. growth for Thin Film:
Adopt the wet chemistry method described in the patent ZL:200610030144.7 to prepare the Mn-Co-Ni-O film; Choosing manganese acetate, cobalt acetate, nickel acetate is raw material; Make solvent with glacial acetic acid; Preparing conduction type respectively is the precursor solution of n and p, uses sol evenning machine and quick anneal oven to prepare thin-film material then.
1 growth conduction type was the Mn-Co-Ni-O film 2 of n type on Sapphire Substrate before this; Be that the continued growth conduction type is the Mn-Co-Ni-O film 3 of p type on the Mn-Co-Ni-O film 2 of n type at conduction type; So just preparing conduction type is p type and n type Mn-Co-Ni-O film overlaying structure, forms the pn knot.
3. the preparation of electrode:
Adopting etching technics to remove a part of conduction type is that the Mn-Co-Ni-O film 2 of n type is the Mn-Co-Ni-O film 3 of p type with conduction type; Wherein conduction type is that the Mn-Co-Ni-O film 3 of p type is all removed; Conduction type is that the Mn-Co-Ni-O film 2 of n type is removed 1/10-2/3 thickness; At the conduction type that exposes is to protect with mask plate on the n type Mn-Co-Ni-O film 2, and preparation lastblock conductive layer is as hearth electrode 5; At conduction type be on the part face of p type Mn-Co-Ni-O film 2 with the mask plate protection, preparation lastblock conductive layer is as top electrode 4.
Preparation method of the present invention has following good effect and advantage:
1. select sapphire sheet as substrate, the Mn-Co-Ni-O film of on Sapphire Substrate, growing has good crystallinity.
2.Mn-Co-Ni-O material is full wave temperature-sensitive detecting material; The present invention utilizes the photoelectric characteristic of this material and the design of device architecture; Can produce photovoltaic effect, be used to prepare ultraviolet-visible-infrared broadband photoelectric detector, expand the range of application of Mn-Co-Ni-O thin-film material.
3.Mn-Co-Ni-O the conduction type of material is associated with its set of dispense ratio, along with the variation of component ratio, the conduction type of material can be changed between n and p.The Mn-Co-Ni-O material is a spinel structure, and its general formula can be written as Mn
3-x-yCo
yNi
xO
4, in general, high Ni content (0.75≤x≤1.0) Mn-Co-Ni-O material is the n type, like NiMn
2O
4, Ni
0.75Co
0.5Mn
1.75O
4Film; And the Mn-Co-Ni-O material of low Ni content (0≤x≤0.5) is the p type, like Ni
0.5Co
1.0Mn
1.5O
4, Ni
0.48Co
0.96Mn
1.56O
4, MnCo
2O
4Film.
4. conduction type is that the Mn-Co-Ni-O thin-film material of p type and n type all is a spinel structure; Lattice constant is close, when preparation pn knot, does not have the problem of lattice mismatch, and the conduction type of on substrate, growing successively is the film of n type and p type; Can successfully form the pn knot, be used to prepare photovoltaic detector spare.
5. utilize the photodetector work of photovoltaic effect not need applying bias, device power consumption is low, and its structure helps being prepared into extensive focal plane device, and broad development prospect is arranged.
Description of drawings
Fig. 1. the present invention is based on the structural representation of the broadband film-type photodetector of Sapphire Substrate;
Among the figure:
1---Sapphire Substrate;
2---conduction type is the Mn-Co-Ni-O film of n type;
3---conduction type is the Mn-Co-Ni-O film of p type;
4---top electrode;
5---hearth electrode.
Fig. 2. preparation method's flow chart.
Embodiment
An embodiment who obtains through experimental study is provided below, and the present invention is done further detailed description.
On Sapphire Substrate, on this substrate, prepare the NiMn of 1.5 micron thick earlier through wet chemistry method
2O
4Film, the conduction type of this film is the n type, at NiMn
2O
4On the film then with the grow Mn of 1.5 micron thick of wet chemistry method
1.56Co
0.96Ni
0.48O
4Film, the conduction type of this film are the p types, and so just preparing conduction type is the film overlaying structure of p type and n type, form the pn knot.Just obtained pn knot photovoltaic detector spare behind preparation hearth electrode and the top electrode.
Claims (1)
1. broadband film-type photodetector based on Sapphire Substrate; It comprises: sapphire sheet substrate (1), conduction type are the Mn-Co-Ni-O film (2) of n type, Mn-Co-Ni-O film (3), top electrode (4) and the hearth electrode (5) that conduction type is the p type, it is characterized in that:
On sapphire sheet substrate (1), preparing thickness successively and be rice in 100 is the Mn-Co-Ni-O film (2) of n type to 9 microns conduction type, and thickness is that the conduction type of 100 nanometers to 9 micron is the Mn-Co-Ni-O film (3) of p type; Be to make a conductive layer as top electrode (4) on the part face of Mn-Co-Ni-O film (3) of p type at conduction type, hearth electrode (5) is produced on and removes a part of conduction type is that the Mn-Co-Ni-O film (3) of p type and the conduction type of 1/10-2/3 thickness are that the conduction type that exposes behind the Mn-Co-Ni-O film (2) of n type is on the Mn-Co-Ni-O film (2) of n type.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104166A (en) * | 2017-05-03 | 2017-08-29 | 常州大学怀德学院 | A kind of ZnO/NiFe2O4Nano-array composite heterogenous junction material and its solar cell of preparation |
Citations (4)
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|---|---|---|---|---|
| JP2000348905A (en) * | 1999-06-03 | 2000-12-15 | Matsushita Electric Ind Co Ltd | Thin-film thermistor element and manufacture of the same |
| US6475604B1 (en) * | 1999-06-03 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Thin film thermistor element and method for the fabrication of thin film thermistor element |
| CN101055902A (en) * | 2007-04-29 | 2007-10-17 | 大连海事大学 | A PIN structure TiO2 base ultraviolet detector and its making method |
| US20100065743A1 (en) * | 2006-12-14 | 2010-03-18 | Commissariat A L'energie Atomique | Use of a combination of iron monoxide and spinel oxides as a sensitive material for detecting infrared radiation |
-
2012
- 2012-01-20 CN CN2012100193698A patent/CN102544137A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000348905A (en) * | 1999-06-03 | 2000-12-15 | Matsushita Electric Ind Co Ltd | Thin-film thermistor element and manufacture of the same |
| US6475604B1 (en) * | 1999-06-03 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Thin film thermistor element and method for the fabrication of thin film thermistor element |
| US20100065743A1 (en) * | 2006-12-14 | 2010-03-18 | Commissariat A L'energie Atomique | Use of a combination of iron monoxide and spinel oxides as a sensitive material for detecting infrared radiation |
| CN101055902A (en) * | 2007-04-29 | 2007-10-17 | 大连海事大学 | A PIN structure TiO2 base ultraviolet detector and its making method |
Non-Patent Citations (1)
| Title |
|---|
| 葛玉建等: "化学沉积法低温生长锰钴镍薄膜结晶性及红外椭偏光谱研究", 《红外与毫米波学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104166A (en) * | 2017-05-03 | 2017-08-29 | 常州大学怀德学院 | A kind of ZnO/NiFe2O4Nano-array composite heterogenous junction material and its solar cell of preparation |
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Application publication date: 20120704 |