CN101777601A - InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof - Google Patents
InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an InAs/GaSb superlattice infrared photoelectric detector, comprising: a GaSb substrate (1); an epitaxial wafer prepared on the GaSb substrate and sequentially comprising, from bottom to top, a GaSb buffer layer (2), a p-type ohmic contact layer (3), an InAs/GaSb superlattice layer and an InAs cover layer (8); and etching is implemented on the epitaxial wafer with phosphoric acid and citric acid solution by adopting standard photoetching technique so as to expose the p-type ohmic contact layer (3), and electrodes made of alloys are then respectively sputtered on the p-type ohmic contact layer (3) and the InAs cover layer (8). The invention simultaneously discloses a manufacturing method of the InAs/GaSb superlattice infrared photoelectric detector. According to the invention, the InAs/GaSb superlattice infrared photoelectric detector can be manufactured by utilizing InAs/GaSb superlattice material.
Description
Technical field
The present invention relates to technical field of semiconductors, especially relating to is a kind of 3 to 5 microns medium wave band InAs/GaSb superlattice Infrared Detectorss of growing on the GaSb substrate and preparation method thereof.
Background technology
Along with progress of science and technology, various wave bands are suitable for multi-purpose Infrared Detectors and grow up gradually, in dual-use fields such as strategic early-warning, tactics warning, night vision, guidance, communication, meteorology, earth resource detection, industrial flaw detection, medical science, spectrum, thermometric, atmospheric monitorings, Infrared Detectors all is widely used at present.But Infrared Detectorss such as current the most frequently used silicon-doped detector, InSb, QWIP, MCT all require to work at low temperatures, need special refrigeration plant, involve great expense, thereby its application are restricted.Theoretical prediction shows that the InAs/GaSb superlattice are uniquely a kind ofly can have more high efficiency infrared detector material than HgCdTe.Its excellent material characteristic comprises: the high effective mass in electronics and hole can effectively reduce tunnelling current, improves the density of states; There are bigger energy difference in heavy hole band and light hole band, can effectively reduce the auger recombination probability, improve carrier lifetime etc.Therefore the InAs/GaSb super crystal lattice material is the most possible at present third generation infrared detector material of realizing working and room temperature.
Summary of the invention
(1) technical problem that will solve
The purpose of this invention is to provide 3 to 5 microns medium wave band InAs/GaSb superlattice Infrared Detectorss of on the GaSb substrate, growing of a kind of low-dark current, high detectivity and preparation method thereof.
(2) technical scheme
An aspect for achieving the above object the invention provides a kind of InAs/GaSb superlattice infrared photodetector, comprising:
GaSb substrate 1;
The epitaxial wafer of preparation on this GaSb substrate 1, this epitaxial wafer comprises GaSb resilient coating 2, p type ohm ohmic contact layer 3, InAs/GaSb superlattice layer and InAs cap rock 8 from the bottom to top successively; And
On this epitaxial wafer, adopt standard photolithography techniques and phosphoric acid, citric acid solution etching to expose p type ohm ohmic contact layer 3, then the electrode that the sputter alloy is made on p type ohm ohmic contact layer 3 and InAs cap rock 8 respectively.
In the such scheme, described epitaxial wafer utilizes molecular beam epitaxial method to prepare on GaSb substrate 1.
In the such scheme, the thickness of described GaSb resilient coating 2 is 300nm to 500nm, and the thickness of described p type ohm ohmic contact layer 3 is 500nm to 1000nm, and the thickness of described InAs cap rock 8 is 20nm to 200nm.
In the such scheme, the InAs/GaSb superlattice layer in the described epitaxial wafer is made up of the InAs layer/GaSb layer that is no less than 300 cycles or 2 microns of alternating growth, and wherein every layer of GaSb thickness is 3nm, and every layer of InAs thickness is by surveying the wavelength decision.
In the such scheme, this detector further comprises a passivation layer on epitaxial wafer, and this passivation layer adopts SiO
2Material forms.
In the such scheme, described electrode adopts the titanium platinum alloy, for the thickness of each layer in this titanium platinum alloy of p type Ohm contact electrode be Ti (
)/Pt (
)/Au (
), for the thickness of each layer in this titanium platinum alloy of n type Ohm contact electrode be Ti (
)/Pt (
)/Au (
).
Be another aspect that achieves the above object, the present invention also provides a kind of method of the InAs/GaSb of making superlattice infrared photodetector, comprising:
The GaSb substrate is placed on the molecular beam epitaxial device specimen holder,, then the GaSb substrate is risen to 560 ℃ of degasification 3 minutes under Sb protection 530 ℃ of deoxidations;
Under 520 ℃ of temperature on the GaSb substrate growth GaSb resilient coating;
The GaSb underlayer temperature is reduced to 380 to 420 ℃, and growing p-type ohm ohmic contact layer, InAs/GaSb superlattice layer and InAs cap rock are finished the preparation of epitaxial wafer successively;
The epitaxial wafer for preparing is adopted standard photolithography techniques and phosphoric acid, citric acid solution etching, expose p type ohm ohmic contact layer, then the electrode that the sputter alloy is made on p type ohm ohmic contact layer and InAs cap rock respectively.
In the such scheme, in the step of described growth InAs/GaSb superlattice, the switching sequence of phase shutter and time are followed successively by weekly: interrupt, open simultaneously In and As, interruption, simultaneously open In and Sb, open Ga and Sb simultaneously.
In the such scheme, described electrode adopts the titanium platinum alloy, for the thickness of each layer in this titanium platinum alloy of p type Ohm contact electrode be Ti (
)/Pt (
)/Au (
), for the thickness of each layer in this titanium platinum alloy of n type Ohm contact electrode be Ti (
)/Pt (
)/Au (
).
In the such scheme, this method also comprises after finishing the making step of electrode:
Passivation is carried out on the epitaxial wafer surface, formed a passivation layer, this passivation layer adopts SiO
2Material forms.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention, realized utilizing the InAs/GaSb super crystal lattice material to make the InAs/GaSb superlattice infrared photodetector.
2, utilize the present invention, realized molecular beam epitaxial method growing high-quality InAs/GaSb super crystal lattice material.
3, utilize the present invention, realized reducing the dark current of medium wave band Infrared Detectors, improve the detectivity and the working temperature of detector.
Description of drawings
Fig. 1 is the structural representation of InAs/GaSb superlattice infrared photodetector provided by the invention;
Fig. 2 is the method flow diagram of making InAs/GaSb superlattice infrared photodetector provided by the invention;
The growth course schematic diagram of Fig. 3 is InAs/GaSb superlattice provided by the invention weekly phase;
Fig. 4 is that experience tight-binding method InAs 8ML/GaSb 8ML superlattice can be with analog result.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
InAs/GaSb superlattice infrared photodetector provided by the invention and preparation method thereof, be on the GaSb substrate, to grow high-quality resilient coating earlier with molecular beam epitaxy technique, the InAs/GaSb superlattice epitaxial wafer of back preparation 3 to 5 μ m detecting bands utilizes this epitaxial wafer to make infrared photoconductivity detector again.
As shown in Figure 1, Fig. 1 is the structural representation of InAs/GaSb superlattice infrared photodetector provided by the invention, comprising:
GaSb substrate 1;
The epitaxial wafer of preparation on this GaSb substrate 1, this epitaxial wafer comprises GaSb resilient coating 2, p type ohm ohmic contact layer 3, InAs/GaSb superlattice layer and InAs cap rock 8 from the bottom to top successively; And
On this epitaxial wafer, adopt standard photolithography techniques and phosphoric acid, citric acid solution etching to expose p type ohm ohmic contact layer 3, then the electrode that the sputter alloy is made on p type ohm ohmic contact layer 3 and InAs cap rock 8 respectively.
Wherein, described epitaxial wafer utilizes molecular beam epitaxial method to prepare on GaSb substrate 1.The thickness of described GaSb resilient coating 2 is 300nm to 500nm, and the thickness of described p type ohm ohmic contact layer 3 is 500nm to 1000nm, and the thickness of described InAs cap rock 8 is 20nm to 200nm.InAs/GaSb superlattice layer in the described epitaxial wafer is made up of the InAs layer/GaSb layer that is no less than 300 cycles or 2 microns of alternating growth, and wherein every layer of GaSb thickness is 3nm, and every layer of InAs thickness is by surveying the wavelength decision.Described electrode adopts the titanium platinum alloy, for the thickness of each layer in this titanium platinum alloy of p type Ohm contact electrode be Ti (
)/Pt (
)/Au (
), for the thickness of each layer in this titanium platinum alloy of n type Ohm contact electrode be Ti (
)/Pt (
)/Au (
).
In addition, this detector further comprises a passivation layer on epitaxial wafer, and this passivation layer adopts SiO
2Material forms.
As shown in Figure 2, Fig. 2 is the method flow diagram of making InAs/GaSb superlattice infrared photodetector provided by the invention, and this method comprises:
Step 1: the GaSb substrate is placed on the molecular beam epitaxial device specimen holder,, then the GaSb substrate is risen to 560 ℃ of degasification 3 minutes under Sb protection 530 ℃ of deoxidations;
Step 2: the GaSb resilient coating of under 520 ℃ of temperature, on the GaSb substrate, growing;
Step 3: the GaSb underlayer temperature is reduced to 380 to 420 ℃, and growing p-type ohm ohmic contact layer, InAs/GaSb superlattice layer and InAs cap rock are finished the preparation of epitaxial wafer successively;
Step 4: the epitaxial wafer for preparing is adopted standard photolithography techniques and phosphoric acid, citric acid solution etching, expose p type ohm ohmic contact layer, then the electrode that the sputter alloy is made on p type ohm ohmic contact layer and InAs cap rock respectively.
Wherein, in the step of described growth InAs/GaSb superlattice, the switching sequence of phase shutter and time are followed successively by weekly: interrupt, open simultaneously In and As, interruption, simultaneously open In and Sb, open Ga and Sb simultaneously.
This method also comprises after finishing the making step of electrode: passivation is carried out on the epitaxial wafer surface, formed a passivation layer, this passivation layer adopts SiO
2Material forms.
To be example by surveying near the InAs/GaSb Infrared Detectors of wavelength 4.8 μ m, 1 pair of the specific embodiment of the present invention is described in further detail in conjunction with the accompanying drawings below.
Refer again to Fig. 1, adopt molecular beam epitaxial method (1) on the GaSb substrate, utilize molecular beam epitaxial method to prepare GaSb resilient coating (2), GaSb p type ohm ohmic contact layer (3), InAs/GaSb superlattice layer (5 successively, 6,7) and InAs cap rock (8) is made electrode (4,10) then on epitaxial wafer and passivation manufactures photodetector to material surface.
InAs layer and GaSb layer that said InAs/GaSb superlattice layer (5,6,7) was alternately arranged by 320 cycles are formed.The InAs layer thickness is in each cycle
The GaSb layer thickness is in each cycle
The growing method in each cycle is opened earlier and was interrupted shutter 6 seconds as shown in Figure 3, opens In, As shutter more simultaneously 48 seconds; After this close all shutters 6 seconds, opened In, Sb shutter more simultaneously 2 seconds, opened Ga and Sb shutter at last simultaneously 14 seconds.
The speed of growth of InAs is 0.168ML/s in the superlattice layer growth course, and the speed of growth of GaSb is 0.613ML/s.Epitaxial wafer employing standard photolithography techniques and phosphoric acid, citric acid solution etch table top, adopt PECVD evaporation SiO
2200nm makes n, p type Ohm contact electrode (4,10) at last respectively.
Described InAs/GaSb superlattice are made up of the InAs layer/GaSb layer that is no less than 300 cycles or 2 microns of alternating growth.Wherein every layer of GaSb thickness and every layer of InAs thickness is by surveying the wavelength decision, and can simulate detection cut-off wavelength under specific InAs and the GaSb thickness by experience tight-binding method, electron effective mass, as shown in Figure 4.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an InAs/GaSb superlattice infrared photodetector is characterized in that, comprising:
GaSb substrate (1);
Go up the epitaxial wafer of preparation at this GaSb substrate (1), this epitaxial wafer comprises GaSb resilient coating (2), p type ohm ohmic contact layer (3), InAs/GaSb superlattice layer and InAs cap rock (8) from the bottom to top successively; And
On this epitaxial wafer, adopt standard photolithography techniques and phosphoric acid, citric acid solution etching to expose p type ohm ohmic contact layer (3), go up the electrode that the sputter alloy is made at p type ohm ohmic contact layer (3) and InAs cap rock (8) respectively then.
2. InAs/GaSb superlattice infrared photodetector according to claim 1 is characterized in that, described epitaxial wafer utilizes molecular beam epitaxial method to go up preparation at GaSb substrate (1).
3. InAs/GaSb superlattice infrared photodetector according to claim 1, it is characterized in that, the thickness of described GaSb resilient coating (2) is 300nm to 500nm, the thickness of described p type ohm ohmic contact layer (3) is 500nm to 1000nm, and the thickness of described InAs cap rock (8) is 20nm to 200nm.
4. InAs/GaSb superlattice infrared photodetector according to claim 1, it is characterized in that, InAs/GaSb superlattice layer in the described epitaxial wafer is made up of the InAs layer/GaSb layer that is no less than 300 cycles or 2 microns of alternating growth, wherein every layer of GaSb thickness is 3nm, and every layer of InAs thickness is by surveying the wavelength decision.
5. InAs/GaSb superlattice infrared photodetector according to claim 1 is characterized in that, this detector further comprises a passivation layer on epitaxial wafer, and this passivation layer adopts SiO
2Material forms.
6. InAs/GaSb superlattice infrared photodetector according to claim 1 is characterized in that, described electrode adopts the titanium platinum alloy, is Ti for the thickness of each layer in this titanium platinum alloy of p type Ohm contact electrode
/ Pt
/ Au
Thickness for each layer in this titanium platinum alloy of n type Ohm contact electrode is Ti
/ Pt
/ Au
7. a method of making the InAs/GaSb superlattice infrared photodetector is characterized in that, comprising:
The GaSb substrate is placed on the molecular beam epitaxial device specimen holder,, then the GaSb substrate is risen to 560 ℃ of degasification 3 minutes under Sb protection 530 ℃ of deoxidations;
Under 520 ℃ of temperature on the GaSb substrate growth GaSb resilient coating;
The GaSb underlayer temperature is reduced to 380 to 420 ℃, and growing p-type ohm ohmic contact layer, InAs/GaSb superlattice layer and InAs cap rock are finished the preparation of epitaxial wafer successively;
The epitaxial wafer for preparing is adopted standard photolithography techniques and phosphoric acid, citric acid solution etching, expose p type ohm ohmic contact layer, then the electrode that the sputter alloy is made on p type ohm ohmic contact layer and InAs cap rock respectively.
8. the method for making InAs/GaSb superlattice infrared photodetector according to claim 7, it is characterized in that, in the step of described growth InAs/GaSb superlattice, the switching sequence of phase shutter and time are followed successively by weekly: interrupt, open simultaneously In and As, interruption, simultaneously open In and Sb, open Ga and Sb simultaneously.
9. the method for making according to claim 7 InAs/GaSb superlattice infrared photodetector is characterized in that described electrode adopts the titanium platinum alloy, is Ti for the thickness of each layer in this titanium platinum alloy of p type Ohm contact electrode
/ Pt
/ Au
Thickness for each layer in this titanium platinum alloy of n type Ohm contact electrode is Ti
/ Pt
/ Au
10. the method for making InAs/GaSb superlattice infrared photodetector according to claim 7 is characterized in that this method also comprises after finishing the making step of electrode:
Passivation is carried out on the epitaxial wafer surface, formed a passivation layer, this passivation layer adopts SiO
2Material forms.
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|---|---|---|---|
| CN201010106773XA CN101777601B (en) | 2010-02-03 | 2010-02-03 | Manufacturing method of InAs/GaSb superlattice infrared photoelectric detector |
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|---|---|---|---|
| CN201010106773XA CN101777601B (en) | 2010-02-03 | 2010-02-03 | Manufacturing method of InAs/GaSb superlattice infrared photoelectric detector |
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|---|---|
| CN101777601A true CN101777601A (en) | 2010-07-14 |
| CN101777601B CN101777601B (en) | 2012-05-30 |
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| CN102534764A (en) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | Method for epitaxially growing type-II superlattice narrow-spectrum infrared photoelectric detector material |
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