CN113725310B - Multi-junction germanium-based long-wave infrared detector and preparation method thereof - Google Patents
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 31
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 34
- 238000010521 absorption reaction Methods 0.000 claims abstract description 28
- 230000000903 blocking effect Effects 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 238000005468 ion implantation Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000001312 dry etching Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000000233 ultraviolet lithography Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only Ge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
- G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a multi-junction germanium-based long-wave infrared detector and a preparation method thereof, wherein the detector consists of a germanium substrate, an electrode area, an absorption area, a blocking area, a lead electrode and a passivation layer, and the preparation method comprises four steps, namely, the absorption area, the electrode area, the passivation layer and the lead electrode are sequentially formed on the high-resistance germanium substrate through photoetching, ion implantation, rapid annealing, film deposition, dry etching and other processes. The long-wave infrared detector prepared by the invention introduces a plurality of absorption areas and blocking areas on the basis of the traditional structure of blocking the impurity area detector, thereby obtaining a plurality of depletion areas, increasing the width of the depletion areas, increasing the effective light absorption area of the device and improving the response rate and the detection rate of the detector. The preparation method of the invention is compatible with the current semiconductor process technology, and has low research, development and production costs.
Description
Technical Field
The invention relates to a long-wave infrared detector and a preparation method thereof, and the multi-junction germanium-based long-wave infrared detector is particularly suitable for the field of medium-infrared and far-infrared astronomical detection within the range of 40-200 mu m.
Background
Infrared astronomy is an important branch in the astronomy field, and the key to developing infrared astronomy is to develop infrared detectors. Common infrared detectors can be prepared from mercury cadmium telluride, indium antimonide, indium gallium arsenide and other materials, and the infrared light is absorbed by utilizing the property of a semiconductor material, so that the energy of the absorbed photons needs to be larger than the forbidden band width of the semiconductor material, and the detectable wavelength is shorter.
The impurity blocking band detector introduces impurity energy levels by doping the semiconductor material and absorbs infrared light by utilizing the impurity energy levels. The response wavelength of the detector is determined by ionization activation energy of impurities in the semiconductor material, the response wavelength of the silicon-based impurity blocking band detector is covered by 4-50 mu m, and the germanium-based and gallium arsenide-based impurity blocking band detectors can expand the response wavelength to 200 and 300 mu m respectively. Compared with other infrared detectors, the impurity blocking band detector has remarkable advantages, and has become a mainstream detector in the field of middle and far infrared astronomical detection.
The conventional impurity blocking band detector has structural disadvantages, which limit further improvement of detection performance. From theoretical analysis, it is known that the electric field intensity in the absorption region of the device is not uniformly distributed but is distributed only in a narrow depletion region, and the electric field intensity in the neutral region other than the depletion region is small. Only the photo-generated carriers generated in the depletion region can be effectively separated under the drive of the electric field, and the photo-generated carriers generated in the neutral region can be quickly recombined. Therefore, in order to improve the detection performance of the device, the width of the depletion region should be made as large as possible. The width of the depletion region is mainly determined by the doping concentration, the operating voltage and the width of the blocking region, and the widening difficulty is great. With the further development of astronomy, the requirements on astronomical detection technology are continuously increased, and the structure of the existing detector must be optimized and improved, so that the performance of the detector is improved.
Disclosure of Invention
The invention aims to provide a multi-junction germanium-based impurity blocking band (MBIB) long-wave infrared detector, and provides a preparation method for realizing the structure, which solves the technical problem of narrow depletion region of the traditional impurity blocking band detector. The novel detector is different from the traditional impurity zone detector in structure and working mode, and is characterized in that:
the long-wave infrared detector adopts a planar structure, namely an electrode area, an absorption area and a blocking area are all positioned in a near-surface layer of the germanium substrate;
the lead electrode is positioned above the electrode area, and the passivation layer is positioned above the absorption area and the blocking area;
the absorption area and the blocking area are periodically distributed between the lead electrodes;
the long wave infrared detector has n absorption regions and n blocking regions, thereby having n depletion regions, and the width of the depletion regions is increased by n-1 times (n is usually 2 or more and 10 or less).
The germanium substrate is high-resistance, and the impurity concentration range is 1×10 12 ～1×10 14 cm -3 。
The electrode region is made of degenerately doped germanium material, the doping element can be boron, gallium or beryllium, and the impurity concentration range is 5 multiplied by 10 18 ～5×10 19 cm -3 The doping depth ranges from 0.2 to 2 mu m and the width ranges from 50 to 200 mu m.
The absorption region is made of doped germanium material, the doping element is boron, gallium or beryllium, and the impurity concentration range is 1 multiplied by 10 16 ～1×10 17 cm -3 The doping depth ranges from 0.2 to 2 mu m and the width ranges from 5 to 50 mu m.
The blocking area is made of high-resistance germanium material, and the width range is 1-5 mu m.
The preparation method for realizing the detector comprises the following steps:
(1) forming an absorption region pattern on the surface of the germanium substrate by utilizing a photoetching process, and then implanting required impurities into the ion implantation to form an absorption region;
(2) forming an electrode region pattern on the surface of the germanium substrate by utilizing a photoetching process, and then forming an electrode region by implanting required impurities into ions;
(3) depositing a silicon nitride passivation layer on the surface of the germanium substrate by using a film deposition process, and then performing a rapid annealing process to activate the ion implanted impurities;
(4) and opening an electrode window on the passivation layer by using a dry etching process, and then evaporating a metal film to form a lead electrode.
The invention has the advantages that:
1. the invention inherits the advantages of the traditional impurity blocking band detector, can detect long wavelength, and simultaneously avoids the defects of the traditional impurity blocking band detector.
2. The invention has simple structure and low preparation cost, is compatible with the current semiconductor technology, and is easy to popularize to silicon-based and gallium arsenide-based impurity blocking band detectors.
Drawings
FIG. 1 is an overall block diagram of a detector of the present invention.
Fig. 2 is a device structure diagram of embodiment 1 of the present invention.
Fig. 3 is a device structure diagram of embodiment 2 of the present invention.
Fig. 4 is a device structure diagram of embodiment 3 of the present invention.
FIG. 5 is a flow chart of the process for manufacturing the detector of the present invention.
Detailed Description
The following description of the invention and the accompanying drawings gives three preferred embodiments of the invention and further describes technical details, structural features and functional features of the invention in connection with examples which, however, do not limit the scope of the invention and are intended to be included in the examples described in the summary of the invention and the description of the drawings. Theoretical analysis shows that compared with the traditional impurity blocking band detector, the performance of the device in the embodiment 1 of the invention can be improved by 1 time, the performance of the device in the embodiment 2 of the invention can be improved by 4 times, and the performance of the device in the embodiment 3 of the invention can be improved by 9 times. The preparation method of the detector is specifically realized by the following steps:
example 1:
the high-resistance Ge substrate 1 is selected, and the doping concentration is 1 multiplied by 10 13 cm -3 Two absorption region patterns are manufactured on the surface of the Ge substrate 1 by means of ultraviolet lithography, the width of a single absorption region is 50 mu m, and the thickness of the used photoresist is about 3 mu m, so that the photoresist can be used as a masking agent in the subsequent ion implantation process;
b impurity is implanted into the absorption region 3 by a plurality of ion implantation processes to a depth of about 1 μm and a doping concentration of about 4×10 16 cm -3 ；
Manufacturing electrode region patterns on the surface of the Ge substrate 1 by means of ultraviolet lithography, wherein the electrode region width is 100 mu m;
the electrode region 2 is again implanted with B impurity by a plurality of ion implantation processes to a depth of about 1 μm and a doping concentration of about 3×10 18 cm -3 ；
Depositing a 200nm thick layer of Si on the surface of the Ge substrate 1 by means of PECVD technology 3 N 4 As a device passivation layer 6;
manufacturing an electrode pattern on the surface of the passivation layer by means of ultraviolet lithography, and then opening an electrode window by means of RIE etching;
pd with a thickness of 20nm and Au with a thickness of 200nm are deposited at the electrode window as lead electrodes 5 by an electron beam deposition technique, and then the device is annealed at 300 ℃ for 300S by a rapid annealing technique.
Example 2:
the high-resistance Ge substrate 1 is selected, and the doping concentration is 1 multiplied by 10 13 cm -3 Five absorption region patterns are manufactured on the surface of the Ge substrate 1 by means of ultraviolet lithography, the width of a single absorption region is 20 mu m, and the thickness of the used photoresist is about 3 mu m, so that the photoresist can be used as a masking agent in the subsequent ion implantation process;
b impurity is implanted into the absorption region 3 by a plurality of ion implantation processes to a depth of about 1 μm and a doping concentration of about 5×10 16 cm -3 ；
Manufacturing electrode region patterns on the surface of the Ge substrate 1 by means of ultraviolet lithography, wherein the electrode region width is 100 mu m;
the electrode region 2 is again implanted with B impurity by a plurality of ion implantation processes to a depth of about 1 μm and a doping concentration of about 3×10 18 cm -3 ；
Depositing a 200nm thick layer of Si on the surface of the Ge substrate 1 by means of PECVD technology 3 N 4 As a device passivation layer 6;
manufacturing an electrode pattern on the surface of the passivation layer by means of ultraviolet lithography, and then opening an electrode window by means of RIE etching;
pd with a thickness of 20nm and Au with a thickness of 200nm are deposited at the electrode window as lead electrodes 5 by an electron beam deposition technique, and then the device is annealed at 300 ℃ for 300S by a rapid annealing technique.
Example 3:
the high-resistance Ge substrate 1 is selected, and the doping concentration is 1 multiplied by 10 13 cm -3 Ten absorption region patterns are manufactured on the surface of the Ge substrate 1 by means of ultraviolet lithography, the width of a single absorption region is 10 mu m, and the thickness of the used photoresist is about 3 mu m, so that the photoresist can be used as a masking agent in the subsequent ion implantation process;
b impurity is implanted into the absorption region 3 by a plurality of ion implantation processes to a depth of about 1 μm and a doping concentration of about 2×10 16 cm -3 ；
Manufacturing electrode region patterns on the surface of the Ge substrate 1 by means of ultraviolet lithography, wherein the electrode region width is 100 mu m;
the electrode region 2 is again implanted with B impurity by a plurality of ion implantation processes to a depth of about 1 μm and a doping concentration of about 3×10 18 cm -3 ；
Depositing a 200nm thick layer of Si on the surface of the Ge substrate 1 by means of PECVD technology 3 N 4 As a device passivation layer 6;
manufacturing an electrode pattern on the surface of the passivation layer by means of ultraviolet lithography, and then opening an electrode window by means of RIE etching;
pd with a thickness of 20nm and Au with a thickness of 200nm are deposited at the electrode window as lead electrodes 5 by an electron beam deposition technique, and then the device is annealed at 300 ℃ for 300S by a rapid annealing technique.
Claims (6)
1. The utility model provides a multijunction germanium-based long wave infrared detector, includes germanium substrate (1), electrode zone (2), absorption zone (3), blocking zone (4), lead electrode (5) and passivation layer (6), its characterized in that:
the long-wave infrared detector adopts a planar structure, namely an electrode area (2), an absorption area (3) and a blocking area (4) are all positioned in a near-surface layer of a germanium substrate (1);
the lead electrode (5) is positioned above the electrode region (2), and the passivation layer (6) is positioned above the absorption region (3) and the blocking region (4);
the absorption area (3) and the blocking area (4) are periodically distributed between the lead electrodes (5);
the long wave infrared detector is provided with n absorption areas (3) and n blocking areas (4), so that the long wave infrared detector is provided with n depletion areas, the width of the depletion areas is increased by n-1 times, and n is more than or equal to 2 and less than or equal to 10.
2. The multi-junction germanium-based long wave infrared detector of claim 1, wherein: the germanium substrate (1) is high-resistance, and the impurity concentration range is 1 multiplied by 10 12 ～1×10 14 cm -3 。
3. The multi-junction germanium-based long wave infrared detector of claim 1, wherein: the electrode region (2) is made of degenerately doped germanium material, the doping element is boron, gallium or beryllium, and the impurity concentration range is 5 multiplied by 10 18 ～5×10 19 cm -3 The doping depth ranges from 0.2 to 2 mu m and the width ranges from 50 to 200 mu m.
4. The multi-junction germanium-based long wave infrared detector of claim 1, wherein: the absorption region (3) is made of doped germanium material, the doping element is boron, gallium or beryllium, and the impurity concentration range is 1 multiplied by 10 16 ～1×10 17 cm -3 The doping depth ranges from 0.2 to 2 mu m and the width ranges from 5 to 50 mu m.
5. The multi-junction germanium-based long wave infrared detector of claim 1, wherein: the blocking area (4) is made of high-resistance germanium material, and the width range is 1-5 mu m.
6. A method of making the multi-junction germanium-based long wave infrared detector of claim 1, comprising the steps of:
(1) forming an absorption region pattern on the surface of the germanium substrate (1) by utilizing a photoetching process, and then forming an absorption region (3) by implanting required impurities;
(2) forming an electrode region pattern on the surface of the germanium substrate (1) by utilizing a photoetching process, and then forming an electrode region (2) by ion implantation of required impurities;
(3) depositing a silicon nitride passivation layer (6) on the surface of the germanium substrate (1) by utilizing a film deposition process, and then performing a rapid annealing process to activate ion implanted impurities;
(4) and opening an electrode window on the passivation layer (6) by utilizing a dry etching process, and then evaporating a metal film to form the lead electrode (5).
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| CN113725310A (en) | 2021-11-30 |
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