CN112531070A - Core-shell nano-pillar array-based deep ultraviolet detector and preparation method thereof - Google Patents

Core-shell nano-pillar array-based deep ultraviolet detector and preparation method thereof Download PDF

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CN112531070A
CN112531070A CN202011337981.0A CN202011337981A CN112531070A CN 112531070 A CN112531070 A CN 112531070A CN 202011337981 A CN202011337981 A CN 202011337981A CN 112531070 A CN112531070 A CN 112531070A
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gallium nitride
nano
core
layer
pillar array
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黄凯
李冠錡
唐锐钒
高娜
李澄
李金钗
康俊勇
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Xiamen University
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    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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Abstract

The invention provides a deep ultraviolet detector based on a core-shell nano-pillar array and a preparation method thereof. The deep ultraviolet detector based on the core-shell nano-pillar array comprises a substrate and a gallium nitride layer positioned on the substrate, wherein the upper half part of the gallium nitride layer forms a gallium nitride nano-pillar array, and the gallium nitride nano-pillar array and gallium oxide coated outside the upper surface of the gallium nitride nano-pillar array form a core-shell nano-pillar array heterojunction; the metal electrodes are respectively arranged on the electrode areas on the surfaces of the gallium nitride layer and the gallium oxide layer and form Schottky contact. The dark current of the deep ultraviolet detector can be effectively reduced through the formation of the core-shell heterojunction, the responsivity of the device is improved, and the performance of the photoelectric detection device based on the semiconductor heterojunction is improved. The deep ultraviolet detector based on the core-shell nano-column array provided by the invention is simple in structure, easy to prepare and convenient for large-scale production.

Description

Core-shell nano-pillar array-based deep ultraviolet detector and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to a deep ultraviolet detector based on a core-shell nano-pillar array and a preparation method thereof.
Background
The deep ultraviolet photoelectric detector with the working wavelength in the solar blind area (200-280 nm) has strong signal identification capability and strong anti-interference characteristic facing complex environment, and has wide application prospect in the fields of missile guidance, ozone hole monitoring, biomedical analysis, fire component detection and the like. However, the deep ultraviolet photodetectors developed at present are still not precise and sensitive enough for recognizing weak light signals, which puts higher requirements on the structure and performance of the deep ultraviolet photodetectors.
The deep ultraviolet detector based on the aluminum gallium nitrogen/gallium nitride, magnesium zinc oxygen/zinc oxide semiconductor heterojunction has become one of the research hotspots of the ultraviolet detection technology in recent years by virtue of the advantages of low dark current and high responsivity. However, the aluminum gallium nitrogen/gallium nitride heterojunction has a larger energy band offset, which is not beneficial to the rapid separation and collection of photon-generated carriers; the magnesium-zinc-oxygen/zinc oxide heterojunction faces the problems of poor crystallization quality and large epitaxy difficulty of a magnesium-zinc-oxygen material with a high magnesium component, and the performance of the prepared deep ultraviolet detector is limited to a certain extent. The gallium oxide semiconductor material has an ultra-wide band gap of 4.9eV and does not need alloying, so the gallium oxide semiconductor material is considered as an ideal manufacturing material of a new generation of deep ultraviolet photoelectric detector.
The Chinese patent application 201711020720.4 discloses a gallium oxide phase-combination nano-pillar array and a preparation method thereof, and the method realizes the rapid and effective separation of current carriers by forming the gallium oxide of different phases into a phase heterojunction nano-pillar array; but the heterogeneous structure essentially relates to the same material with different phases, and the performance of the formed heterogeneous structure interface is not improved obviously, so that the performance and the application of the detector are greatly limited. The Chinese patent application 201810997396.X provides a photoelectrochemical solar blind ultraviolet detector based on a gallium oxide nano-pillar array, the detector is composed of gallium oxide nano-pillar arrays of different phases growing on a transparent conductive substrate, the electrochemical preparation process and the device structure are complex, large-area production and manufacturing are not facilitated, and industrialization is difficult to realize.
Therefore, it is urgently needed to develop a semiconductor heterojunction deep ultraviolet photoelectric detector with a simpler device structure and higher performance and a preparation method thereof, and the deep ultraviolet photoelectric detector has important significance for completing a detection technology based on semiconductor heterojunction and improving the ultraviolet photoelectric detection level.
Disclosure of Invention
The invention aims to overcome the defects that the dark current inhibition of the current deep ultraviolet detector prepared based on the semiconductor heterojunction is not obvious enough, the device structure is complex, the preparation process is complicated, the large-area production and manufacturing are not facilitated and the like, and provides the deep ultraviolet detector based on the core-shell nano-pillar array and the preparation method thereof.
The first technical scheme of the invention is as follows:
a deep ultraviolet detector based on a core-shell nano-pillar array is provided with a substrate and a gallium nitride layer positioned on the substrate; the upper half part of the gallium nitride layer forms a gallium nitride nanorod array, the gallium nitride nanorod array and gallium oxide coated outside the upper surface of the gallium nitride nanorod array form a core-shell nanorod array heterojunction, and metal electrodes are respectively arranged in electrode areas on the surfaces of the gallium nitride layer and the gallium oxide layer and form Schottky contact.
In a preferred embodiment, the substrate is one of a homogeneous substrate gallium nitride single crystal or a heterogeneous substrate aluminum nitride single crystal, sapphire, silicon carbide, and single crystal silicon.
In a preferred embodiment, the gallium nitride layer has a thickness of 4-4.5 μm.
In a preferred embodiment, the gallium nitride/gallium oxide heterojunction nanocolumn has a diameter of 300nm to 2 um.
In a preferred embodiment, the gallium oxide layer has a thickness of 10nm to 300 nm.
In a preferred embodiment, the metal electrode is any one of a Ni/Au or Ti/Au or Cr/Au metal composite layer.
The second technical scheme of the invention is as follows:
a preparation method of a deep ultraviolet detector based on a core-shell nano-pillar array comprises the following steps:
(1) growing a gallium nitride epitaxial layer with a certain thickness on a homogeneous or heterogeneous substrate by using a metal organic chemical vapor phase epitaxy technology;
(2) growing a silicon dioxide film layer on the surface of the gallium nitride by a plasma enhanced chemical vapor deposition method;
(3) forming a Polystyrene (PS) micro-nano sphere template by pulling on the surface of the silicon dioxide film layer, wherein the diameter adjustable range of the micro-nano sphere is 300nm-2 um; bombarding the surface of a Polystyrene (PS) micro-nano sphere template by using oxygen plasmas to obtain a micro-nano sphere array with controllable size and period;
(4) adopting reactive coupling plasma etching to form a silicon dioxide mask layer distributed in an array manner, and simultaneously removing the PS micro-nano sphere template on the surface through a tetrahydrofuran solution;
(5) and etching the gallium nitride film layer containing the mask layer by reactive coupling plasma, and removing the silicon dioxide mask layer by wet etching to form the gallium nitride nano-pillar array. Thus, the preparation of the gallium nitride nano-pillar array is completed;
(6) placing the obtained gallium nitride nano-pillar array in a micro-control diffusion furnace, oxidizing the surface of the gallium nitride nano-pillar array for 1-10 hours, and oxidizing the surface layer of the gallium nitride nano-pillar array to obtain a gallium oxide film layer so as to form a gallium nitride/gallium oxide core-shell nano-pillar array heterojunction;
(7) carrying out first photoetching on the structure by using a standard photoetching process, and then removing the photoresist of the exposed part by using an acetone solution and exposing a window, wherein a gallium oxide layer is arranged at the window; reacting and coupling the gallium oxide at the plasma etching window to the gallium nitride layer, thereby exposing the surface area of the gallium nitride layer of the metal electrode to be deposited, covering and protecting the rest part by photoresist, removing the photoresist, cleaning the sample and preparing for secondary photoetching;
(8) performing alignment according to the first photoetching mark, then completing second photoetching treatment, and removing the exposed photoresist by using acetone to obtain the specific positions of the metal electrodes to be deposited on the surfaces of the gallium oxide layer and the gallium nitride layer;
(9) and simultaneously depositing the metal electrode at the specific position of the metal electrode to be deposited by utilizing a magnetron sputtering technology, stripping the photoresist, and then quickly performing thermal annealing in a nitrogen atmosphere to form Schottky contact, thereby finally preparing the deep ultraviolet detector based on the core-shell nano-column array.
In a preferred embodiment, the thickness of the silicon dioxide mask layer in step (2) is 100-300 nm.
Compared with the prior art, the invention has the following beneficial effects:
the detector provided by the invention has a simple structure, greatly simplifies the preparation process and is easy for large-scale production. By using the gallium nitride/gallium oxide nanorod array heterojunction, the nanorod array has a strong optical absorption capacity and a high carrier generation capacity due to the direct high surface-to-volume ratio and the effective optical coupling with incident light. Since the gallium nitride/gallium oxide heterojunction results in a smaller conduction band offset and a higher valence band offset, when ultraviolet light is shone on the device under reverse bias, photogenerated electrons can be transported in the conduction band and collected at the electrode, but few photogenerated holes are collected because of the high valence band offset and the low hole mobility of gallium oxide itself. These factors may cause internal gain mechanisms. When a hole is collected at the front electrode under reverse bias, several electrons have been collected at the back electrode, which is actually a photon generated number of carriers, which are mainly composed of photo-generated electrons; under the condition of illumination, the gallium oxide has low carrier mobility and the gallium nitride/gallium oxide heterojunction plays a certain role in reducing dark current.
Drawings
For a further understanding of the invention, reference will now be made to the appended drawings in which examples are illustrated.
FIG. 1 is a schematic diagram of the complete structure of a deep ultraviolet detector based on a core-shell nano-pillar array in the embodiment of the invention;
FIG. 2 is a top view (surface) of a scanning electron microscope of an embodiment of the GaN/GaN core-shell nanorod array;
FIG. 3 is a cross-sectional view of a scanning electron microscope of an embodiment of the GaN/GaN core-shell nanorod array;
fig. 4 is a flowchart of a method for manufacturing a deep ultraviolet detector based on a core-shell nano-pillar array in an embodiment of the present invention.
Detailed Description
The invention is further described below by means of specific embodiments. The drawings are only schematic and can be easily understood, and the specific proportion can be adjusted according to design requirements. In the drawings, the relative relationship of elements in the drawings as described above should be understood by those skilled in the art to mean that the relative positions of the elements are correspondingly determined by the elements on the front and the back for easy understanding, and therefore, the elements may be turned over to present the same elements, and all should fall within the scope of the present disclosure.
Example 1
The embodiment provides a deep ultraviolet detector based on a core-shell nano-pillar array, as shown in fig. 1, the structure of which includes: a substrate 1 and a gallium nitride layer 2; the upper half part of the gallium nitride layer 2 forms a gallium nitride nano-pillar array, and the gallium nitride nano-pillar array and the gallium oxide layer 3 coating the outer surface of the upper surface of the gallium nitride nano-pillar array form a core-shell nano-pillar array heterojunction; metal electrodes 4 and 5 are provided on the electrode regions on the surfaces of the gallium nitride layer 2 and the gallium oxide layer 3, respectively, and form schottky contacts.
The substrate layer 1 is sapphire, the thickness of the gallium nitride layer 2 is 4-4.5um, and the metal electrodes 4 and 5 are Cr/Au metal composite layers.
The diameter of the gallium nitride/gallium oxide heterojunction nano-column is 500nm-600nm, as shown in figure 2.
The gallium oxide layer 3 is 60nm thick as shown in fig. 3.
In fig. 1, 6 is the light incidence direction.
In this embodiment, as shown in fig. 4, a method for manufacturing a deep ultraviolet detector based on a core-shell nanopillar array includes the following steps:
step 1: growing a gallium nitride layer on a substrate;
in this step, the sapphire substrate 1 is cleaned at a high temperature to remove surface contamination. Growing a gallium nitride layer 2 on a sapphire substrate with H2Carrying MO source trimethyl gallium, ammonia gas and other reactants through a multi-channel pipeline as carrier gas, uniformly mixing the gases, then entering a reaction chamber, and growing a gallium nitride film layer 2 on the sapphire substrate 1.
Step 2: depositing a silicon dioxide mask layer on the surface of the gallium nitride layer;
in this step, the gallium nitride epitaxial wafer obtained in step 1 was ultrasonically cleaned in acetone and isopropanol solutions for 10 minutes, respectively, and then immersed in dilute hydrochloric acid (concentrated hydrochloric acid mixed with water at a volume ratio of 1: 1) for 5 minutes to remove the oxide on the surface of the gallium nitride layer 2. And growing a silicon dioxide film layer with the thickness of about 200nm on the surface of the gallium nitride layer 2 by a plasma enhanced chemical vapor deposition method.
And step 3: manufacturing a PS nanosphere array on the surface of the silicon dioxide mask layer;
in the step, a PS micro-nano sphere template is formed on the surface of the silicon dioxide mask layer through lifting, and the adjustable range of the sphere diameter is 300nm-2 um; and bombarding the surface of the sample by using oxygen plasmas to obtain the micro-nano spherical array with controllable size and period.
And 4, step 4: etching the silicon dioxide mask layer and removing the PS micro-nano spheres on the surface of the silicon dioxide mask layer;
in the step, a silicon dioxide mask layer in array distribution is formed by adopting reactive coupling plasma etching, and a PS micro-nano sphere template on the surface of the silicon dioxide mask layer is removed by using a tetrahydrofuran solution.
And 5: forming a gallium nitride nano-pillar array;
in the step, the gallium nitride layer 2 with silicon dioxide as a mask layer is etched through reactive coupling plasma, and the gallium nitride nano-pillar array is formed after the silicon dioxide mask layer is removed through wet etching.
Step 6: forming a gallium nitride/gallium oxide core-shell nano-pillar array heterojunction;
in the step, the obtained gallium nitride nano-pillar array is placed in a micro-control diffusion furnace, and oxidized for 1 hour to obtain a gallium oxide layer 3 with the thickness of about 60nm on the surface layer of the gallium nitride nano-pillar array. Thereby forming a gallium nitride/gallium oxide core-shell nanopillar array heterojunction with the gallium nitride nanopillar array as the core and the gallium oxide layer as the shell as shown in fig. 2 and fig. 3, wherein the diameter of the gallium nitride/gallium oxide core-shell nanopillar is 500-600 nm.
And 7: photoetching for the first time to expose the surface area of the gallium nitride layer of the metal electrode to be deposited;
in the step, AZ5214E photoresist is used for gluing, and the first mask plate is used for alignment and exposure through a Germany Karlsuss MA6/BA6 double-sided alignment photoetching machine after whirl coating and prebaking; and (3) finishing the first photoetching by using a standard photoetching process, developing and exposing a gallium oxide area, removing the photoresist of the exposed part after the first photoetching by using an acetone solution to expose the gallium oxide layer 3, etching the surface gallium oxide layer 3 to the gallium nitride layer 2 by using a reactive coupling plasma etching technology, and exposing the surface area of the gallium nitride layer 2 of the metal electrode to be deposited.
And 8: determining the specific positions of the metal electrodes to be deposited on the surfaces of the gallium nitride layer and the gallium oxide layer by second photoetching;
in the step, a second mask plate for alignment and mask plate exposure are used according to the first photoetching mark; and developing to expose the specific positions of the metal electrodes to be deposited on the surfaces of the gallium nitride layer 2 and the gallium oxide layer 3.
And step 9: simultaneously depositing metal electrodes on the surface of the gallium nitride layer and the surface of the gallium oxide layer and forming Schottky contact;
respectively depositing Cr/Au metal composite layers with the thickness of 40nm/60nm on the surface of the gallium nitride layer 2 and the surface of the gallium oxide layer 3 by adopting direct-current magnetron sputtering, and stripping photoresist to form an electrode structure based on a gallium nitride/gallium oxide core-shell nano-column array, wherein the diameter of an outer ring of a ring-mounted electrode is 300nm, and the diameter of an inner ring is 240 nm; and (3) rapidly annealing the obtained device for 120s under the condition of 200 ℃ in a nitrogen atmosphere, wherein the metal electrode 4 and the metal electrode 5 respectively form Schottky contact with the gallium nitride layer 2 and the gallium oxide layer 3.
And thus, the preparation of the deep ultraviolet detector based on the gallium nitride/gallium oxide core-shell nano-pillar array is completed.
The above description is only an embodiment of the present invention, but the design concept of the present invention is not limited thereto, and any insubstantial changes, modifications or substitutions of the present invention using the design concept belong to the behaviors violating the protection scope of the present invention.

Claims (9)

1. A deep ultraviolet detector based on a core-shell nano-pillar array is characterized in that: comprises a substrate and a gallium nitride layer positioned on the substrate; the upper half part of the gallium nitride layer forms a gallium nitride nanorod array, and the gallium nitride nanorod array and the gallium oxide layer coated outside the upper surface of the gallium nitride nanorod array form a core-shell nanorod array heterojunction; and the metal electrodes are respectively arranged in the electrode areas on the surfaces of the gallium nitride layer and the gallium oxide layer and form Schottky contact.
2. The deep ultraviolet detector based on the core-shell nano-pillar array is characterized in that: the substrate is a homogeneous substrate gallium nitride or heterogeneous substrate aluminum nitride single crystal or sapphire or silicon carbide or monocrystalline silicon.
3. The deep ultraviolet detector based on the core-shell nano-pillar array is characterized in that: the thickness of the gallium nitride layer is 4-4.5 um.
4. The deep ultraviolet detector based on the core-shell nano-pillar array is characterized in that: the diameter of the gallium nitride/gallium oxide heterojunction nano-column is 300nm-2 um.
5. The deep ultraviolet detector based on the core-shell nano-pillar array is characterized in that: the thickness of the gallium oxide layer is 10nm-300 nm.
6. The deep ultraviolet detector based on the core-shell nano-pillar array is characterized in that: the metal electrode is one of homogeneous metal composite layers in Ni/Au or Ti/Au or Cr/Au combination.
7. A preparation method of a deep ultraviolet detector based on a core-shell nano-pillar array is characterized by comprising the following steps:
(1) growing gallium nitride on a homogeneous or heterogeneous substrate by applying metal organic chemical vapor deposition;
(2) growing a silicon dioxide mask layer on the surface of the gallium nitride by utilizing plasma enhanced chemical vapor deposition;
(3) lifting the surface of the silicon dioxide mask layer to form a polystyrene micro-nano sphere template, and bombarding the surface of the micro-nano sphere template by using oxygen plasma to obtain a micro-nano sphere array with controllable size and period;
(4) forming a silicon dioxide mask layer in array distribution by adopting reactive coupling plasma etching; removing the polystyrene micro-nano sphere template on the surface of the silicon dioxide mask layer through tetrahydrofuran solution;
(5) etching the gallium nitride film layer containing the silicon dioxide mask layer by reactive coupling plasma; removing the silicon dioxide mask layer by wet etching to form a gallium nitride nano-pillar array;
(6) oxidizing for 1-10 hours to obtain a gallium oxide film layer on the surface layer of the gallium nitride nano-pillar array and form a gallium nitride/gallium oxide core-shell nano-pillar array heterojunction;
(7) exposing a gallium oxide layer window by the first photoetching treatment, and etching gallium oxide on the window to a gallium nitride layer by reactive coupling plasma;
(8) carrying out secondary photoetching treatment to obtain the specific positions of the metal electrodes to be deposited on the surfaces of the gallium oxide layer and the gallium nitride layer;
(9) and depositing metal electrodes on the specific positions of the metal electrodes to be deposited simultaneously by utilizing a magnetron sputtering technology, and rapidly annealing in a nitrogen atmosphere to form Schottky contact between the metal electrodes and the gallium nitride and the gallium oxide respectively.
8. The method for preparing the deep ultraviolet detector based on the core-shell nano-pillar array according to claim 7, wherein the thickness of the gallium nitride layer is 4-4.5 um.
9. The method for preparing the deep ultraviolet detector based on the core-shell nano-pillar array according to claim 7, wherein in the step (3), the diameter of the micro-nano sphere is in a controllable range of 300nm to 2 μm.
CN202011337981.0A 2020-11-25 2020-11-25 Core-shell nano-pillar array-based deep ultraviolet detector and preparation method thereof Pending CN112531070A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113044809A (en) * 2021-03-22 2021-06-29 南京大学 Vertical Ga2O3 nanotube ordered array and preparation method thereof
CN115296561A (en) * 2022-09-05 2022-11-04 广东工业大学 Core-shell coaxial gallium nitride piezoelectric nano generator and processing method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050164475A1 (en) * 2004-01-23 2005-07-28 Martin Peckerar Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
CN101894831A (en) * 2009-05-20 2010-11-24 中国科学院半导体研究所 Ultraviolet-infrared dual band detector and manufacturing method thereof
CN102522448A (en) * 2012-01-13 2012-06-27 浙江大学 Magnesium nickel oxide-based multi-band solar-blind region ultraviolet detector and manufacturing method for same
CN103022216A (en) * 2012-11-22 2013-04-03 中山大学 BeMgZnO-based homogenous p-n structure ultraviolet detector and preparation method thereof
CN105957801A (en) * 2016-05-31 2016-09-21 中国科学院半导体研究所 Gallium nitride nanocone and gallium nitride nanorod mixed array manufacturing method
KR20180086806A (en) * 2017-01-23 2018-08-01 경희대학교 산학협력단 Method for manufacturing a gallium nitride substrate
CN110690316A (en) * 2019-10-31 2020-01-14 华南理工大学 GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column and preparation method thereof
CN110690317A (en) * 2019-10-31 2020-01-14 华南理工大学 Based on individual layer MoS2Self-powered ultraviolet detector of thin film/GaN nano-pillar array and preparation method thereof
CN211295123U (en) * 2019-10-31 2020-08-18 华南理工大学 GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050164475A1 (en) * 2004-01-23 2005-07-28 Martin Peckerar Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
CN101894831A (en) * 2009-05-20 2010-11-24 中国科学院半导体研究所 Ultraviolet-infrared dual band detector and manufacturing method thereof
CN102522448A (en) * 2012-01-13 2012-06-27 浙江大学 Magnesium nickel oxide-based multi-band solar-blind region ultraviolet detector and manufacturing method for same
CN103022216A (en) * 2012-11-22 2013-04-03 中山大学 BeMgZnO-based homogenous p-n structure ultraviolet detector and preparation method thereof
CN105957801A (en) * 2016-05-31 2016-09-21 中国科学院半导体研究所 Gallium nitride nanocone and gallium nitride nanorod mixed array manufacturing method
KR20180086806A (en) * 2017-01-23 2018-08-01 경희대학교 산학협력단 Method for manufacturing a gallium nitride substrate
CN110690316A (en) * 2019-10-31 2020-01-14 华南理工大学 GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column and preparation method thereof
CN110690317A (en) * 2019-10-31 2020-01-14 华南理工大学 Based on individual layer MoS2Self-powered ultraviolet detector of thin film/GaN nano-pillar array and preparation method thereof
CN211295123U (en) * 2019-10-31 2020-08-18 华南理工大学 GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TAO HE ET AL.: ""Broadband ultraviolet photodetector based on vertical Ga2O3/GaN nanowire array with high responsivity"", 《ADVANCED OPTICAL MATERIALS》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113044809A (en) * 2021-03-22 2021-06-29 南京大学 Vertical Ga2O3 nanotube ordered array and preparation method thereof
CN113044809B (en) * 2021-03-22 2022-03-18 南京大学 Vertical Ga2O3 nanotube ordered array and preparation method thereof
CN115296561A (en) * 2022-09-05 2022-11-04 广东工业大学 Core-shell coaxial gallium nitride piezoelectric nano generator and processing method thereof
US11963450B2 (en) 2022-09-05 2024-04-16 Guangdong University Of Technology Method for manufacturing core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator

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