CN105957801A - Gallium nitride nanocone and gallium nitride nanorod mixed array manufacturing method - Google Patents
Gallium nitride nanocone and gallium nitride nanorod mixed array manufacturing method Download PDFInfo
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- CN105957801A CN105957801A CN201610373179.4A CN201610373179A CN105957801A CN 105957801 A CN105957801 A CN 105957801A CN 201610373179 A CN201610373179 A CN 201610373179A CN 105957801 A CN105957801 A CN 105957801A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
The invention provides a gallium nitride nanocone and gallium nitride nanorod mixed array manufacturing method, and the method comprises the steps: firstly sequentially depositing a gallium nitride layer, a mask layer and a photoresist layer on a substrate; secondly arranging small polystyrene balls on the photoresist layer in a dense manner, taking the small polystyrene balls as lenses, and carrying out the exposure and development of the photoresist layer, so as to form a circular hole array on the photoresist layer; thirdly transferring the pattern of the photoresist layer to a silicon oxide layer through employing the etching technology, and carrying out etching till the lower gallium nitride layer is exposed, so as to form a circular hole array on the mask layer; and finally growing a gallium nitride nanocone and gallium nitride nanorod mixed array in a circular hole array of the mask layer. The method can produce the gallium nitride nanocone and gallium nitride nanorod mixed array in a large scale, and the sizes of the gallium nitride nanocones and gallium nitride nanorods can be controlled.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of gallium nitride (GaN) nanocone and
The manufacture method of gallium nitride nano-pillar mixing array.
Background technology
Based on the III-V nitride material of GaN and InGaN and AlGaN alloy material it is
The most valued novel semiconductor material.GaN base material is direct band gap width
Bandgap semiconductor material, has the direct band gap of continuous variable between 0.7-6.2eV, excellent thing
Reason, chemical stability, high saturated electron drift velocity, the superiority such as high breakdown field strength and high heat conductance
Energy.GaN base LED have energy-saving and environmental protection, cold light source, color rendering index height, fast response time,
Volume is little and the outstanding advantages such as long working life, and it is as the green solid light source of a new generation's illumination revolution
Demonstrate huge application potential.
GaN material makes One-Dimensional GaN nanostructured as the good characteristic of important semi-conducting material
Have wider in fields such as micro-nano photoelectric device, photoelectric detector, electronic device, environment and medical science
General potential application foreground, therefore, processability One-Dimensional GaN nano junction excellent, high-quality
Structure and characteristic research just become the advanced subject of the current world, studies in China.GaN nano junction at present
The mask choosing epitaxial growth method that structure is conventional is the most all the side by electron beam exposure and nano impression
Method makes.But both approaches has respective shortcoming: electron beam exposure is difficult to large-scale production,
Nano impression then needs the pressure version that preparation is expensive, and the motility for size Control is poor.
Summary of the invention
(1) to solve the technical problem that
It is an object of the invention to provide a kind of gallium nitride nanocone and gallium nitride nano-pillar mixing array
Manufacture method, can large-scale production go out gallium nitride nanocone and gallium nitride nano-pillar mixing array, and
And the size of gallium nitride nanocone and gallium nitride nano-pillar is controlled.
(2) technical scheme
The gallium nitride nanocone of present invention offer and the manufacture method of gallium nitride nano-pillar mixing array, bag
Include:
S1, is sequentially depositing gallium nitride layer, mask layer and photoresist layer on a substrate, it is preferable that lining
The end is Sapphire Substrate or silicon substrate, and the material of mask layer is silicon oxide or silicon nitride, described mask
The thickness of layer is 20nm～100nm；
S2, arranges one layer of compact arranged polystyrene sphere, wherein, polyphenyl second on photoresist layer
A diameter of 200nm of alkene bead～1 μm；
S3, with described polystyrene sphere as lens, is exposed photoresist layer and develops, with
Described photoresist layer forms circular opening array；
S4, uses etching technics to transfer on silicon oxide layer by the figure of photoresist layer, and etching is until sudden and violent
Expose lower section gallium nitride layer, to form circular opening array at mask layer；
S5, growing gallium nitride nano-pillar and and gallium nitride nanocone in the circular opening array of mask layer
Mixing array.
Further, in step S1, deposition process includes MOCVD, MBE, HVPE.
Further, in step S3, use ultraviolet source photoresist layer is exposed and develops, expose
The light time is 3s～10s, and developing time is 2s～6s.
Further, etching technics includes inductively coupled plasma (ICP) and reactive ion etching
(RIE)。
Further, in step S5, use MOCVD Pulsed growth method growing gallium nitride nano-pillar and
With gallium nitride nanocone mixing array, wherein, growth temperature is 1000 DEG C, and carrier gas is nitrogen and hydrogen
Mixed gas, ratio is 1: 1, but its flow 2000sccm.Set of time is: ammonia is passed through 6s
Rear closedown, is passed through trimethyl gallium (TMGa) 18s, is then shut off, pause 6s.Ammonia is passed through flow
It is 70sccm for 500sccm, TMGa flow.
Further, also include after step S3, use stripping technology or ultrasonic technique to remove polyphenyl
Ethylene bead.
(3) beneficial effect
The present invention utilizes the characteristic of pipe/polyhenylethylene nano bead, can control gained circular opening easily
Diameter and periodic distance, and specific pulsed growth methods gained can be utilized with large-scale production
To nano-device comprise the nanostructured of two kinds of patterns, the present invention can be used for GaN base LED, LD,
The photoelectric devices such as HEMT, it is also possible to for other semiconductor device epitaxy technology of III/V, II/VI.
Accompanying drawing explanation
Fig. 1 is gallium nitride nanocone and the gallium nitride nano-pillar mixing array of embodiment of the present invention offer
The flow chart of manufacture method.
Fig. 2 is to be sequentially depositing plane gallium-nitride layer, mask layer and light in the embodiment of the present invention on substrate
Cross-sectional view after photoresist layer.
Fig. 3 is cross section after transparent polystyrene bead of tiling above photoresist layer in the embodiment of the present invention
Figure.
Fig. 4 is exposure imaging the cross-sectional view after removing polystyrene sphere in the embodiment of the present invention.
Fig. 5 is cross-sectional view after etch mask layer in the embodiment of the present invention.
Fig. 6 be in the embodiment of the present invention MOCVD growth after cross-sectional view.
Fig. 7 be the embodiment of the present invention prepare nanocone and the mixing array scanning electron microscope (SEM) photograph of nano-pillar
Sheet.
Description of reference numerals
10 substrates
11 gallium nitride layers
12 mask layers
13 photoresist layers
20 polystyrene spheres
30 circular openings
40 gallium nitride nano-pillar
41 gallium nitride nanocone
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with concrete real
Execute example, and referring to the drawings, the present invention is described in more detail.
Fig. 1 is gallium nitride nanocone and the gallium nitride nano-pillar mixing array of embodiment of the present invention offer
The flow chart of manufacture method, as it is shown in figure 1, method includes:
S100, is sequentially depositing plane gallium-nitride layer 11, mask layer 12 and photoresist layer over the substrate 10
13.As in figure 2 it is shown, deposition has gallium nitride layer 11 on substrate 10, on gallium nitride layer 11, deposition is covered
Mold layer 12, the thickness of mask layer is 20nm～100nm, and on mask layer 12, deposition has photoresist layer
13, wherein, photoresist layer 13 uses positive photoresist, the deposition process of each layer all can use
One in MOCVD, MBE, HVPE.
S200, arranges a packed mono-layer polystyrene sphere 20 above photoresist layer 13.Such as Fig. 3
Shown in, close-packed arrays between each polystyrene sphere 20, and this layer be single solid matter polyphenyl
Ethylene bead, solid matter polystyrene sphere 20 diameter can as required 200nm～1 μm it
Between change, therefore can conveniently control diameter and the periodic distance of follow-up gained circular opening 30.
S300, with polystyrene sphere 20 as lens, uses ultraviolet source expose and develop, is formed
Circular opening array；Time of exposure is 3s～10s, and developing time is 2s～6s.
S400, use stripping technology or ultrasonic technique removal polystyrene sphere 20, as shown in Figure 4,
After exposure imaging, photoresist layer runs through multiple circular opening 30.
S500, uses etching technics to be transferred to by photoetching offset plate figure on mask layer 12, and etching is until sudden and violent
Expose lower section gallium nitride layer 11, as it is shown in figure 5, after over etching, mask layer 12 has also extended through
Multiple circular openings 30.
S600, uses mocvd method growing gallium nitride nano-pillar and and nanocone mixing array, growth
Temperature is 1000 DEG C, and carrier gas is nitrogen and hydrogen gas mixture, and ratio is 1: 1, but its flow
2000sccm.Set of time is: ammonia is closed after being passed through 6s, is passed through trimethyl gallium (TMGa) 18s,
Be then shut off, pause 6s, ammonia be passed through flow be 500sccm, TMGa flow be 70sccm, system
Obtain nanocone as shown in Figure 6 and Figure 7 and the mixing array of nano-pillar.
Particular embodiments described above, is carried out the purpose of the present invention, technical scheme and beneficial effect
Further describe, be it should be understood that the foregoing is only the present invention specific embodiment and
, be not limited to the present invention, all within the spirit and principles in the present invention, that is done any repaiies
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. gallium nitride nanocone and a manufacture method for gallium nitride nano-pillar mixing array, its feature
It is, including:
S1, is sequentially depositing gallium nitride layer, mask layer and photoresist layer on a substrate；
S2, arranges one layer of compact arranged polystyrene sphere on photoresist layer；
S3, with described polystyrene sphere as lens, is exposed described photoresist layer and develops,
To form circular opening array at described photoresist layer；
S4, uses etching technics to transfer on silicon oxide layer by the figure of photoresist layer, and etching is until sudden and violent
Expose lower section gallium nitride layer, to form circular opening array at described mask layer；
S5, in the circular opening array of described mask layer growing gallium nitride nano-pillar and and gallium nitride receive
Rice cone mixing array.
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that in described step S1 deposition process include MOCVD, MBE,
HVPE。
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that described substrate is Sapphire Substrate or silicon substrate.
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that the material of described mask layer is silicon oxide or silicon nitride, described in cover
The thickness of mold layer is 20nm～100nm.
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that a diameter of 200nm of described polystyrene sphere～1 μm.
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that in described step S3, uses ultraviolet source to described photoresist layer
Being exposed and develop, time of exposure is 3s～10s, and developing time is 2s～6s.
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that etching technics includes inductively coupled plasma and reactive ion etching.
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that in described step S5, uses the growth of MOCVD Pulsed growth method
Gallium nitride nano-pillar and and gallium nitride nanocone mixing array.
Gallium nitride nanocone the most according to claim 1 and gallium nitride nano-pillar mixing array
Manufacture method, it is characterised in that also include after described step S3, use stripping technology or
Ultrasonic technique removes polystyrene sphere.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435720A (en) * | 2016-09-22 | 2017-02-22 | 东莞市联洲知识产权运营管理有限公司 | Preparation method of GaN film material |
| CN110473873A (en) * | 2019-07-15 | 2019-11-19 | 华南师范大学 | A kind of preparation method of orderly ferroelectricity topology domain structure array |
| CN110690316A (en) * | 2019-10-31 | 2020-01-14 | 华南理工大学 | GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column and preparation method thereof |
| CN112531070A (en) * | 2020-11-25 | 2021-03-19 | 厦门大学 | Core-shell nano-pillar array-based deep ultraviolet detector and preparation method thereof |
| CN114496768A (en) * | 2022-04-01 | 2022-05-13 | 浙江大学杭州国际科创中心 | Preparation method of nano-pillar array |
| CN115386958A (en) * | 2022-08-24 | 2022-11-25 | 闽都创新实验室 | Gallium nitride nano foam and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435720A (en) * | 2016-09-22 | 2017-02-22 | 东莞市联洲知识产权运营管理有限公司 | Preparation method of GaN film material |
| CN110473873A (en) * | 2019-07-15 | 2019-11-19 | 华南师范大学 | A kind of preparation method of orderly ferroelectricity topology domain structure array |
| CN110473873B (en) * | 2019-07-15 | 2022-04-29 | 华南师范大学 | Preparation method of ordered ferroelectric topological domain structure array |
| CN110690316A (en) * | 2019-10-31 | 2020-01-14 | 华南理工大学 | GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column and preparation method thereof |
| CN112531070A (en) * | 2020-11-25 | 2021-03-19 | 厦门大学 | Core-shell nano-pillar array-based deep ultraviolet detector and preparation method thereof |
| CN114496768A (en) * | 2022-04-01 | 2022-05-13 | 浙江大学杭州国际科创中心 | Preparation method of nano-pillar array |
| CN115386958A (en) * | 2022-08-24 | 2022-11-25 | 闽都创新实验室 | Gallium nitride nano foam and preparation method thereof |
| CN115386958B (en) * | 2022-08-24 | 2024-02-02 | 闽都创新实验室 | Gallium nitride nano foam and preparation method thereof |
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Application publication date: 20160921 |