CN107706263A - Infrared block impurity band double-color detector and preparation method thereof in a kind of new germanium based photoconduction - Google Patents
Infrared block impurity band double-color detector and preparation method thereof in a kind of new germanium based photoconduction Download PDFInfo
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- 239000012535 impurity Substances 0.000 title claims abstract description 38
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 22
- 238000001259 photo etching Methods 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
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- 230000008020 evaporation Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 9
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- 238000010586 diagram Methods 0.000 description 4
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- 238000005468 ion implantation Methods 0.000 description 4
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- 229910021641 deionized water Inorganic materials 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
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- 230000008569 process Effects 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses infrared block impurity band double-color detector in a kind of new germanium based photoconduction and preparation method thereof.Detector is made up of N number of with lower unit, and one of unit is：In HpGe substrate, the electrode layer for being doped into degeneracy, impurity band barrier layer, highly doped absorbed layer, the electrode layer for being doped into degeneracy, highly doped absorbed layer, impurity band barrier layer are sequentially distributed from one end to the other end, wherein electrode layer is metal electrode layer, is passivation layer above barrier layer and absorbed layer.The present invention mainly prepares infrared absorption layer using ion implanting and the technological means of electrode layer is successfully prepared infrared block impurity band double-color detector in Ge based photoconductions.The space although device has greatly improved in performance, manufacture craft is simple, and cost is cheap and reproducible, has important application prospect in fields such as space flight, astrosurveillances.
Description
Technical field
Patent of the present invention is related to infrared block impurity band double-color detector and its preparation in a kind of new germanium based photoconduction
Method.
Background technology
In recent years, with the traction that system is applied, core component of the infrared detector as infrared machine system, it grinds
Study carefully, develop or even produce and increasingly attract attention, and multicolor is even more one of most important direction of advance of infrared detector.It is infrared
Detector is that the infrared radiation signal of the specific wavelength of incidence is transformed into electric signal so as to realize the device of detection purpose, and it is more
Colorization then refers to that multiple wave bands can be detected.As important a member in infrared detector extended familys, extrinsic photoconductor detector
It can be used for realizing that multicolor detects.After the sufficiently large photon of semiconductor absorber energy, some internal carriers turn from bound state
It is changed into free state, so that conductivity semiconductor increases, it is exactly that photoconduction is visited using detector made of this photoconductive effect
Survey device.By the way that some impurity elements are mixed in semiconductor, the detection wavelength of detector, such photoconductive detector can adjust
It is extrinsic.It can realize that multicolor detects to semiconductor doping Determination of Multi-Impurities, it is contemplated that the intrinsic sound of semiconductor
Should, only adulterating a kind of impurity element can be to realize dual-color detection.
It is and the high sensitivity photoconductive detector of far infrared detection infrared used in stop impurity band (BIB) device, its
Basic theories is the stop to skipping trajectories effect in impurity band.This stop mechanism allows it dense using larger doping
Degree prepares extrinsic photoconductor detector, reduces dark current by barrier layer to improve the performance of conventional extrinsic photoconductor.Should
The substrate of type of sensors typically has Si, Ge and GaAs, wherein especially based on the above two.The absorbed layer of traditional BIB detectors is
Prepared with the method for extension, the manufacture craft of this method is more complicated.Absorbed layer is prepared using ion implanting, can larger journey
Degree ground simplifies manufacture craft, is BIB detector production methods emerging in recent years.The device architecture of extension type is three-dimensional, and
The device architecture of ion implantation type is then plane formula.JeffreyW.Beeman et al. has successfully produced Ge:B ion implantation types
Infrared detector, Kaisheng Liao et al. has also successfully produced Si:P ion injection type infrared detector, He Zhu et al.
Also using surface phasmon structure to this Si:The performance of P ion injection type infrared detector is optimized.
The content of the invention
The purpose of the present invention is the coupled ion injection technique using high-purity germanium wafer as substrate, there is provided a kind of spy of planar structure
Survey device.Not only manufacture craft is simple for the device, and the middle electromagnetic infrared wave of two kinds of different-wavebands effectively can be visited
Survey, realize double-coloredization.The present invention is achieved through the following technical solutions：
The invention discloses infrared block impurity band double-color detector in a kind of new germanium based photoconduction, detector is by N
Individual to be formed with lower unit, one of unit is：In HpGe substrate, it is sequentially distributed from one end to the other end and is doped into letter
And electrode layer, impurity band barrier layer, highly doped absorbed layer, the electrode layer for being doped into degeneracy, highly doped absorbed layer, impurity band resistance
Barrier, wherein electrode layer are metal electrode layers, are passivation layers above barrier layer and absorbed layer.
As a further improvement, passivation layer of the present invention is the silica of PECVD methods growth.
As a further improvement, detector of the present invention also includes being bonded with metal electrode layer by spherical pressure welding
Spun gold lead.
As a further improvement, electrode layer of the present invention is P ion injection region, metal electrode layer is Al films,
Described absorbed layer is S ion implanted regions.
The invention also discloses a kind of preparation side of infrared block impurity band double-color detector in new germanium based photoconduction
Method, in HpGe substrate, absorbed layer and electrode layer are prepared by way of photoetching, ion implanting increase temperature annealing, is clipped in two
Barrier layer between person also just naturally form, growth of passivation layer, use on absorbed layer and barrier layer using PECVD methods
Radio-frequency magnetron sputter method evaporation metal electrode layer on electrode layer, metal electrode layer and gold wire bonding are obtained with gold wire bonder
Contact conductor.
As a further improvement, its preparation process is as follows：
1) the thick silica of one layer of 200nm is grown on high-purity germanium wafer by the use of PECVD method and is used as photo-etching mark；
2) photoetching uptake zone, by the mask with photoresist of the region in addition to uptake zone；
3) after eroding silicon dioxide layer, ion implanting prepares absorbed layer.
4) electrode district of photoetching ion implanting, by the mask with photoresist of the region in addition to electrode district；
5) ion implanting is carried out again after corrosion silica prepare electrode layer；
6) short annealing (RTA), destroyed crystal structure, activator impurity atom during repairing ion implanting；
7) barrier layer is naturally form between absorbed layer and electrode layer；
8) regrow the thick silica of 200nm by the use of PECVD method and be used as passivation layer；
9) perforate, i.e., behind the region that photoetching ion implanting electrode layer contacts with metal electrode layer, corrosion silica passivation
Layer；
10) photolithographic electrode district, by the mask with photoresist of the part in addition to this region；
11) the metal Al films of the μ m-thick of Grown by Magnetron Sputtering 1 are as metal electrode layer；
12) flow is put into acetone reagent and peeled off；
13) anneal, metal electrode is formed Ohmic contact with ion implanting electrode district；
14) scribing, encapsulation, routing.
As a further improvement, absorbed layer doping concentration of the present invention is 2E17cm3, thickness is 1 μm, and length is
20 μm, barrier layer length is 7 μm, and electrode layer doping concentration is 1E20cm3, the annealing temperature of short annealing is 800 DEG C, and the time is
30s。
As a further improvement, after rf magnetron sputtering evaporation metal electrode layer of the present invention, need to through 300 DEG C,
30min annealing is to form Ohmic contact.
The beneficial effects of the invention are as follows：
The present invention mainly prepares infrared absorption layer using ion implanting and the technological means of electrode layer is successfully prepared Ge bases
Infrared block impurity band double-color detector in photoconduction.During 4K, detector spectrum has two response peaks, respectively positioned at 1.4 μm and
At 6.5 μm.Wherein the former is Ge intrinsic response, and spectral response range is between 1.2-1.6 μm；The latter corresponds to S atom in Ge
Interior impurity energy level, spectral response range is between 2-10 μm.When operating voltage is 1V, Blackbody response sensitivily is about 400mA/W, black
Body detectivity is about 9.7E10cm Hz1/2/W.When temperature is increased to 20K, Blackbody detectivity still can reach in the case of 1V
7.0E10cm Hz1/2/W.The space although device has greatly improved in performance, manufacture craft is simple, cost it is cheap and
It is reproducible, there is important application prospect in fields such as space flight, astrosurveillances.
Brief description of the drawings
Fig. 1 is the Ge prepared:S it is double-colored stop impurity band detector sectional view (on) and plan (under)；
1 is HpGe substrate in figure, and 2 be electrode layer, and 3 be barrier layer, and 4 be absorbed layer, and 5 be metal electrode layer, and 6 be passivation
Layer；
Fig. 2 is detector under 1V biass, optogalvanic spectra schematic diagram during different temperatures；
Fig. 3 is situation of change schematic diagram of Blackbody response sensitivily of the detector in different temperatures with bias；
Fig. 4 is situation of change schematic diagram of dark current of the detector in different temperatures with bias.
Embodiment
The invention discloses infrared block impurity band double-color detector in a kind of new germanium based photoconduction, device architecture is
Plane formula, it is highly doped uptake zone and high-purity impurity band Resistance between two end electrodes, is covered above two regions
There is passivation layer.It is extrinsic Ge of the one layer of heavy doping to degeneracy under the metal electrode region being connected with uptake zone or Resistance.
The brief preparation process of the present invention is as follows：
1) the thick silica of one layer of 200nm is grown on high-purity germanium wafer by the use of PECVD method and is used as photo-etching mark；
2) uptake zone, by the mask with photoresist of the region in addition to uptake zone；
3) after eroding silicon dioxide layer, ion implanting prepares absorbed layer 4；
4) electrode district of photoetching ion implanting, by the mask with photoresist of the region in addition to electrode district；
5) ion implanting is carried out again after corroding silica, and implantation dosage is bigger than uptake zone, to reach degeneracy
Effect；
6) short annealing (RTA), destroyed crystal structure, activator impurity atom during repairing ion implanting；
7) barrier layer 3 is naturally form between absorbed layer 4 and electrode layer 2；
8) regrow the thick silica of 200nm by the use of PECVD method and be used as passivation layer；
9) perforate, i.e., behind the region that photoetching ion implanting electrode layer contacts with metal electrode layer, corrosion silica passivation
Layer；
10) photolithographic electrode district, by the mask with photoresist of the part in addition to this region；
11) the metal Al films of the μ m-thick of Grown by Magnetron Sputtering 1 are as electrode；
12) flow is put into acetone reagent and peeled off；
13) anneal, metal electrode is formed Ohmic contact with ion implanting electrode district；
14) scribing, encapsulation, routing.
Doped chemical of the present invention is S, and its impurity energy level in Ge is 0.18eV, and corresponding wavelength is 6.9 μm.Inhale
It is 1 μm to receive thickness degree, and length is 20 μm, and barrier layer length is 7 μm.Device uses interdigital structure, and each device cell contains about
20 junior units, the uptake zone gross area are 20 × 400 μm2。
Step 3) intermediate ion implantation dosage of the present invention is 2E17cm3, step 5) intermediate ion implantation dosage is 1E20cm3.Step
6) short annealing temperature is 800 DEG C in, annealing time 30s.Annealing temperature is 300 DEG C in step 10), and annealing time is
30min。
Technical scheme is further described below by specific embodiment：
Making programme
Fig. 1 is the Ge prepared:S it is double-colored stop impurity band detector sectional view (on) and plan (under), below scheme
Can be with reference to the schematic diagram shown in Fig. 1.
A. the preparation and cleaning of HpGe piece substrate 1
Commercially high-purity germanium wafer is as substrate, its crystal orientation<100>, resistivity is more than 50 Ω cm.Successively use
Carbon tetrachloride is cleaned by ultrasonic 5 minutes 2 times, and acetone is cleaned by ultrasonic 5 minutes 3 times, and alcohol is cleaned by ultrasonic 5 minutes 3 times, and deionized water is anti-
Rinse 10 times again, nitrogen drying.
B. the preparation of photo-etching mark
Photo-etching mark is used as by the use of PECVD method deposition growing 200nm silica.
C. photoetching uptake zone 4
Dark room conditions are arranged, are put into from refrigerator taking-up AZ4620 photoresists stand-by in spin coating vent cabinet.Flow is passed through normal
After the carbon tetrachloride of rule, acetone, alcohol, deionized water are cleaned, nitrogen drying, in 100 DEG C of baking water removals.After about 10 minutes, take
Go out flow and carry out spin coating, it is first even under the conditions of 500 revs/min 10 seconds, then even 40 seconds under the conditions of 4000 revs/min, photoresist
About 3 μm of thickness.After spin coating, flow is placed on front baking 4 minutes on 100 DEG C of hot plates, while photoresist is put back into refrigerator, it is clear with acetone
Wash sol evenning machine.Connect litho machine and mercury lamp power supply is preheated, and photolithography plate is installed on litho machine.Etching condition is exposure
20 seconds time, exposure intensity is determined by litho machine.After photoetching, flow is dipped in development 80 seconds, during which ceaselessly stirs development
Liquid is uniform to develop.Take out flow and rinse out remaining developer solution with deionized water, dried up with nitrogen gun, be placed on 100 DEG C
Dried 10 minutes after on hot plate.Now, mercury lamp power supply is disconnected, photoetching electromechanical source disconnects after 20 minutes, it is therefore an objective to cool to mercury lamp.
After the completion of photoetching, the silicon dioxide layer of the exterior domain of photoresist is eroded in hydrofluoric acid at room temperature, this region namely uptake zone.
D. ion implanting uptake zone 4
Ion implanting S elements.To reduce the influence of channelling effect, flow horizontal direction is tilted into 7 ° of placements during injection.For
Ensure the uniformity longitudinally injected, contain some steps in injecting scheme, the energy of each step differs with dosage；From
Sub- implantation step is：
1、400keV——9E12cm3；
2、300keV——5E12cm3；
3、200keV——3E12cm3；
4、100keV——2E12cm3；
5、50keV——1E12cm3。
E. photoetching ion implanting electrode layer 2
After ion implanting absorbed layer, remove photoresist.Act on, flow need to be soaked in view of bombardment of the ion implanting line to photoresist
Ultrasound can remove photoresist for 15 minutes completely in acetone.Followed by photoetching electrode layer, specific steps are identical with C, and corrosion is as the same.
F. ion implanting electrode layer 2
Ion implanting P element.Flow is also horizontally oriented 7 ° of placements of inclination, and ion implanting step is：
1、200keV——3E15cm3；
2、100keV——1E15cm3；
3、50keV——5E14cm3。
G. short annealing
In order to reduce diffusion of the impurity in annealing process as far as possible, ion implanting is repaired to crystalline substance using the method for short annealing
The damage of lattice, with activator impurity atom.Annealing is carried out in nitrogen atmosphere, and annealing temperature is 800 DEG C, time 30s.After annealing
Increase gas flow, unnecessary heat is taken away, short annealing can be played a part of, temperature allows flow certainly when dropping to 200 DEG C
So cooling.
H. growth of passivation layer 6
200nm silicon dioxide passivation layers are grown with PECVD method.
I. perforate
Photoetching ion implanting electrode layer and metal electrode contact area, other regions cover with photoresist, rotten with hydrofluoric acid
Lose the silicon dioxide layer exposed.
J. photolithographic electrode layer 5
Lithography step is identical with C.
K. metal electrode layer 5 is prepared
The metal Al films of 1 μ m-thick are grown with the mode of magnetron sputtering, then flow is immersed in acetone and peeled off.For
Prevent Al films from coming off, during stripping can not ultrasound, so splitting time is longer, need 10 hours or so.Then under 300 DEG C of environment under
Place 30 minutes and annealed.
L. scribing, encapsulation, routing
Scribing is carried out by unit with scribing machine convection rib, spin coating protection is carried out on flow surface before scribing.Again by detector
Unit uses low temperature glue bond with heat sink.Using gold wire bonder, metal electrode is connected with heat sink pin with spun gold.
So far the whole Making programme of detector is just completed.
Test and result
By process above process, complete detector chip is obtained.
In order to test device performance, chip is loaded into Dewar bottle, and heat sink corresponding pin is connected on Dewar bottle pin,
After closing Dewar bottle, using mechanical pump and molecular pump, air pressure in bottle is evacuated to 5E-4Pa.Then liquid helium drop is poured into Dewar bottle
Temperature, to assigned temperature after carry out performance test.
The optogalvanic spectra of detector is as shown in Figure 2 when operating voltage is 1V.It is apparent that spectrum contains two response peaks, ring
It is 1.2-1.6 μm and 2-10 μm respectively to answer scope, belongs to middle infrared band, therefore dual-color detection infrared in realizing.Fig. 3 and
Fig. 4 sets forth situation of change of the black matrix response with dark current with bias.It can be seen that under the conditions of 4K, operating voltage 1V
When, Blackbody response sensitivily is about 400mA/W, and with reference to dark current, the Blackbody detectivity that can be obtained now is about 9.7E10cmHz1/2/W.Temperature
When degree is increased to 20K, the Blackbody detectivity under this bias still can reach 7.0E10cm Hz1/2/W.Although the performance side of detector
Face still has greatly improved space, but confirm it is this be easy to implement, the scheme that cost is cheap is conscientiously may be used for dual-color detection
Capable.
Above-described is only the preferred embodiment of the present invention, it is noted that for the ordinary skill of the art
For personnel, on the premise of core technical features of the present invention are not departed from, some improvements and modifications can also be made, these improvement
Protection scope of the present invention is also should be regarded as with retouching.
Claims (8)
- A kind of 1. infrared block impurity band double-color detector in new germanium based photoconduction, it is characterised in that described detector It is made up of N number of with lower unit, described one of unit is：In HpGe substrate (1), divide successively from one end to the other end Cloth the electrode layer (2) for being doped into degeneracy, impurity band barrier layer (3), highly doped absorbed layer (4), the electrode layer for being doped into degeneracy (2), highly doped absorbed layer (4), impurity band barrier layer (3), wherein electrode layer (2) are above metal electrode layer (5), barrier layer (3) and absorbed layer (4) is above passivation layer (6).
- 2. infrared block impurity band double-color detector in germanium based photoconduction according to claim 1, it is characterised in that described Passivation layer (6) be PECVD methods growth silica.
- 3. infrared block impurity band double-color detector in germanium based photoconduction according to claim 1, it is characterised in that described Detector also include the spun gold lead that is bonded by spherical pressure welding with metal electrode layer (5).
- 4. infrared block impurity band double-color detector in germanium based photoconduction according to claim 1, it is characterised in that described Electrode layer (2) be P ion injection region, described metal electrode layer (5) is Al films, and described absorbed layer (4) is S ions note Enter area.
- A kind of 5. infrared block impurity band dual-color detection in new germanium based photoconduction as claimed in claim 1 or 2 or 3 or 4 The preparation method of device, it is characterised in that in HpGe substrate (1), the system by way of photoetching, ion implanting increase temperature annealing Standby absorbed layer (4) and electrode layer (2), the barrier layer (3) being clipped between the two also just naturally form, be existed using PECVD methods Growth of passivation layer (6) above absorbed layer and barrier layer, using radio-frequency magnetron sputter method on electrode layer (2) evaporation metal electrode layer (5) metal electrode layer (5) and gold wire bonding, are obtained into contact conductor with gold wire bonder.
- 6. the preparation method of infrared block impurity band double-color detector, its feature exist in the germanium based photoconduction described in claim 5 In its preparation process is as follows：1) the thick silica of one layer of 200nm is grown on high-purity germanium wafer by the use of PECVD method and is used as photo-etching mark；2) photoetching uptake zone, by the mask with photoresist of the region in addition to uptake zone；3) after eroding silicon dioxide layer, ion implanting prepares absorbed layer (4).4) electrode district of photoetching ion implanting, by the mask with photoresist of the region in addition to electrode district；5) ion implanting is carried out again after corrosion silica prepare electrode layer (2)；6) short annealing (RTA), destroyed crystal structure, activator impurity atom during repairing ion implanting；7) barrier layer (3) is naturally form between absorbed layer (4) and electrode layer (2)；8) regrow the thick silica of 200nm by the use of PECVD method and be used as passivation layer (6)；9) perforate, i.e., behind the region that photoetching ion implanting electrode layer contacts with metal electrode layer, silicon dioxide passivation layer is corroded；10) photolithographic electrode district, by the mask with photoresist of the part in addition to this region；11) the metal Al films of the μ m-thick of Grown by Magnetron Sputtering 1 are as metal electrode layer (5)；12) flow is put into acetone reagent and peeled off；13) anneal, metal electrode is formed Ohmic contact with ion implanting electrode district；14) scribing, encapsulation, routing.
- 7. the preparation method of infrared block impurity band double-color detector in germanium based photoconduction according to claim 6, it is special Sign is that described absorbed layer (4) doping concentration is 2E17cm3, thickness is 1 μm, and length is 20 μm, and barrier layer length is 7 μm, Electrode layer (2) doping concentration is 1E20cm3, the annealing temperature of short annealing is 800 DEG C, time 30s.
- 8. the preparation method of infrared block impurity band double-color detector in germanium based photoconduction according to claim 6, it is special Sign is, after rf magnetron sputtering evaporation metal electrode layer (5), need to be connect through the annealing of 300 DEG C, 30min with forming ohm Touch.
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