CN105957917B - Wavelength selection Si based photoconduction mid and far infrared based on surface phasmon stops impurity band detector and preparation method thereof - Google Patents
Wavelength selection Si based photoconduction mid and far infrared based on surface phasmon stops impurity band detector and preparation method thereof Download PDFInfo
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- CN105957917B CN105957917B CN201610436379.XA CN201610436379A CN105957917B CN 105957917 B CN105957917 B CN 105957917B CN 201610436379 A CN201610436379 A CN 201610436379A CN 105957917 B CN105957917 B CN 105957917B
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The invention patent discloses a kind of wavelength selection Si based photoconduction mid and far infrared blocking impurity band detector and preparation method thereof based on surface phasmon, sequentially consist of high-purity silicon base, the burial hearth electrode of low-resistivity in high-purity silicon base, highly doped absorbed layer, impurity band barrier layer, the passivation layer just deposited over the barrier layer, barrier layer is equipped with top electrode interconnecting area and top electrode, top electrode is the square period array of circular apertures formed by aluminium film, aluminium film forms the surface phasmon structure that square period array of circular apertures is detector, realize wavelength selection function.Top electrode uses metallic aluminium, and the preparation process of aluminium is easy to be mature, and cheap to be easily obtained, resistant to rust ability is strong, while good with the compatible performance of device；The square period array of circular apertures of metallic aluminium is prepared using stripping technology, compared to corrosion technology, controllability and actual effect are more preferable.
Description
Technical field
The blocking for the wavelength selection mid and far infrared wave band response based on surface phasmon that the invention patent relates to a kind of is miscellaneous
Matter band semiconductor detector and preparation method.
Background technique
In recent years, with the traction that system is applied, core component of the infrared detector as infrared machine system is ground
Study carefully, develop or even produce more and more attention has been paid to.Infrared detector is that incident infrared radiation signal is transformed into electric signal is defeated
Device out, extrinsic photoconductor detector are one kind of infrared detector.After the sufficiently large photon of semiconductor absorber energy, body
Interior some carriers are changed into free state from bound state, so that conductivity semiconductor be made to increase, utilize this photoconductive effect system
At detector be exactly photoconductive detector.
Stopping impurity band (BIB) device is infrared used in and far infrared detection highly-sensitive detector, is managed substantially
By being blocking to skipping trajectories effect in impurity band.This blocking mechanism makes it that biggish doping concentration preparation can be used
Extrinsic photoconductor detector reduces dark current by barrier layer to improve the performance of conventional extrinsic photoconductor.It is ground in the past
The BIB detector absorbed layer studied carefully mainly has Si:As for n-type doping, and Si:Sb type detector, absorbed layer is the main of p-type doping
There is Si:B type detector.Also there are many reports for Si:P type detector in recent years, and most of is front incident type device.Shanghai technology
Physics Institute Liao et al. has been made using full epitaxial structure buries hearth electrode thickness in the Si:P type BIB detection of μm magnitude
Device.
Surface phasmon (SPP) is a kind of electromagnetic surface wave generated by incident photon or electron excitation, solely due to it
Special performance, is widely used in photoelectric fields such as nano-photoetching, filter, nonlinear opticses.Periodical array of circular apertures
It is a kind of common phasmon structure, is applied in terms of transmission enhancing, wavelength selection based on its abnormal optical transmission phenomenon
Extensively.Iain J.H.McCrindle et al. is prepared using the composite construction of triangular shaped periods array of circular apertures and Terahertz Meta Materials
Multispectral filter；Chiyang Chang et al. is prepared for Ag array of circular apertures at the In-Ga-As quantum dots infrared detector back side
Detector is realized in the wavelength selection performance of middle infrared band.
Summary of the invention
The purpose of the present invention is using high-purity silicon wafer as base, provide a kind of pair of broadband light of mid and far infrared effectively to be detected
Device, expand the investigative range of light, improve detectivity and response rate to mid-infrared and far-infrared light.Periodical circular hole battle array is utilized simultaneously
Column realize the wavelength selection performance of detector, lay the foundation for the research and preparation of multispectral infrared detector.
The present invention is achieved through the following technical solutions:
The wavelength selection Si base semiconductor photoconduction mid and far infrared resistance based on surface phasmon that the invention discloses a kind of
Impurity band detector is kept off, high-purity silicon base, the burial hearth electrode of low-resistivity in high-purity silicon base, highly doped is sequentially consisted of
Miscellaneous absorbed layer, impurity band barrier layer, the passivation layer just deposited over the barrier layer, the barrier layer are equipped with top electrode interconnecting area
And top electrode, the top electrode are the square period array of circular apertures formed by aluminium film, the detector further includes out
To the V-groove of HIGH-PURITY SILICON substrate, the aluminium film forms the surface phasmon that square period array of circular apertures is detector
Structure realizes wavelength selection function.
As a further improvement, passivation layer of the present invention includes the silicon nitride of upper epidermis and the oxidation of layer
Silicon.
As a further improvement, of the present invention bury the ion implanted region that hearth electrode is As, detector further includes
The spun gold lead being bonded by spherical pressure welding with top electrode interconnecting area.
As a further improvement, top electrode interconnecting area of the present invention is Al electrode, the doping member of ion implanted region
Element is P, and the doped chemical of epitaxial growth absorbed layer is P.
Infrared resistance in the wavelength selection Si base semiconductor photoconduction that the invention also discloses a kind of based on surface phasmon
The preparation method of gear impurity band detector increases temperature annealing (RTA) mode by ion implanting and prepares in HIGH-PURITY SILICON piece substrate
The burial hearth electrode of low-resistivity utilizes chemical vapor deposition (CVD) method epitaxial growth thick film Si:P absorbed layer and impurity band
Barrier layer utilizes plasma enhanced chemical vapor deposition (PECVD) method growth of passivation layer on barrier layer, utilizes wet process
Corrosion obtains V-groove and contacts with hearth electrode formation is buried, and top electrode interconnection is deposited over the barrier layer using radio-frequency magnetron sputter method
Area is bonded with top electrode interconnecting area with spun gold using the square period array of circular apertures of photoetching process preparation aluminium film and obtains electrode
Lead.
As a further improvement, specific preparation process is as follows by the present invention:
1) hearth electrode is buried by ion implanting and high annealing preparation on high purity silicon substrate surface；
2) chemical vapor deposition extension absorbed layer, barrier layer；
3) mark of the 300nm silica as ion implanting is grown on the barrier layer described in；
4) photoetching, silica on wet etching barrier layer, outputs square hole；
5) pass through square hole ion implanting；
6) it anneals；
7) photoetching removes the silica except top electrode ion implanted region square hole；
8) silica and 500nm nitrogen of 300nm are successively grown in barrier layer surface plasma enhanced chemical vapor deposition
SiClx is as passivation layer；
9) photoetching, the silica and silicon nitride of dry etching passivation layer expose the fresh silicon table for needing to etch V-groove
Face；
10) V-groove of wet etching silicon；
11) silicon nitride of dry etching passivation layer, photoetching, the silica of wet etching passivation layer expose square hole
Ion implanted region；
12) rf magnetron sputtering plates 0.6 μm of top electrode interconnecting area, and the top electrode interconnecting area is aluminium；
13) aluminium except top electrode region is eroded；
14) photoetching, the silica in wet etching top electrode region；
15) polar region is being powered on, square period array of circular apertures is lithographically derived on barrier layer；
16) in square period array of circular apertures rf magnetron sputtering plating 100nm thickness aluminium film；
17) removing obtains square period array of circular apertures；
18) scribing, spun gold lead are bonded with top electrode interconnecting area；
As a further improvement, absorbed layer doping concentration of the present invention is 3.5E17cm3, with a thickness of 21 μm, inhale
Receive some compensation doping acceptor, concentration Na=8E12cm in layer3, the impurity doping concentration on the barrier layer is
1E13cm3, with a thickness of 7 μm.
As a further improvement, Implantation Energy 180KeV, implantation dosage is when step 1) intermediate ion of the present invention injects
5E15cm2, when step 5) intermediate ion injects, implantation dosage 3E14cm2, Implantation Energy 60KeV is quick after ion implanting
Annealing, annealing temperature are 850 DEG C, time 30s.
As a further improvement, after rf magnetron sputtering of the present invention plates electrode interconnection area, by 450 DEG C, 30min
Annealing, form Ohmic contact with sample, the array period of the square period array of circular apertures of the aluminium is 8 μm, circle
Pore radius is 2 μm.
The beneficial effects of the present invention are:
The present invention mainly uses ion implanting preparation to bury hearth electrode to be had with chemical vapor epitaxy thick film infrared absorption
The technological means that active layer combines be successfully prepared Si based photoconduction mid and far infrared stop impurity band detector, the detector have compared with
Wide spectral response range, excellent Blackbody response sensitivily and detectivity, light at a temperature of 5k to wavelength at 5-37 μm have
Higher sensitivity and responsiveness.Blackbody response sensitivily of the detector in operating temperature 5K, operating voltage 2V is 4.84A/W, peak
Value response rate is 20.37A/W, and quantum efficiency (containing gain) is 1.01, Blackbody detectivity 1.03E+11cmHz1/2/ W, peak value
Detectivity is 4.34E+11cmHz1/2/W.Meanwhile surface phasmon theory has obtained successfully applying on the detector, benefit
The square period array of circular apertures of metallic aluminium is successfully prepared in the top electrode region of detector with photoetching and lift-off technology.In incidence
Under the action of light, since surface plasmon resonance occurs for metallic aluminium top electrode and silicon contact interface, the photoelectric current of detector is rung
It answers peak that apparent red shift occurs, and occurs the enhancing of photocurrent response at 27.68 μm, realize the wavelength selection of detector
Performance lays a solid foundation for the development of multispectral sensing device.The detector is entirely silicon technology, and process repeatability is good,
Device stability is good, has important application prospect in fields such as space flight, astrosurveillances.
It, can be to doping depth, doping using ion implantation technique in the preparation process for burying hearth electrode and top electrode
Dosage formation more effectively controls；Passivation layer is done using silica and silicon nitride and burial hearth electrode corrosion protection layer can be effective
It is compound that ground reduces surface carrier, while forming good protective effect to device in hearth electrode corrosion process；Top electrode makes
With metallic aluminium, the preparation process of aluminium is easy to be mature, and cheap to be easily obtained, resistant to rust ability is strong, while compatible with device
Performance is good；The square period array of circular apertures of metallic aluminium is prepared using stripping technology, compared to corrosion technology, controllability and practical effect
Fruit is more preferable.
Detailed description of the invention
Fig. 1 is the partial cross section structural schematic diagram that the wavelength selection Si base Si:P prepared stops the detector of impurity band；
Fig. 2 is the floor map of detector upper surface；
Fig. 3 is the SEM figure of square period array of circular apertures；
Fig. 4 is the sectional view done after top electrode ion implanted region；
Fig. 5 is the sample in cross section figure after growth of passivation layer；
Fig. 6 is the sample in cross section figure after wet etching V-groove；
Fig. 7 is the test of the square period array of circular apertures of aluminium on intrinsic silicon and the transmitted light that theoretical modeling obtains respectively
Spectrum；
Fig. 8 is the photoelectricity for not adding square period array of circular apertures and the detector for doing square period array of circular apertures respectively
Flow response spectra.
In figure, 1 is high-purity silicon base, and 2 be to bury hearth electrode, and 3 be absorbed layer, and 4 be barrier layer, and 5 be passivation layer, 6 be on
Electrode interconnection area, 7 be top electrode, and 8 be top electrode ion implanted region.
Specific embodiment
With reference to the accompanying drawings of the specification, by specific embodiment, the present invention is described further.
Fig. 1 is the partial cross section structural schematic diagram that the wavelength selection Si base Si:P prepared stops the detector of impurity band；Fig. 2
It is the floor map of detector upper surface；Detector sequentially consists of high-purity silicon base 1, low electricity in high-purity silicon base 1
The burial hearth electrode 2 of resistance rate, highly doped absorbed layer 3, impurity band barrier layer 4, the passivation layer 5 of 4 disposed thereon on barrier layer stop
Layer 4 is equipped with top electrode interconnecting area 6 and square period metallic aluminium array of circular apertures, and detector further includes out to HIGH-PURITY SILICON substrate 1
V-groove.
The specific preparation step of detector of the present invention is illustrated by following embodiment:
A. the preparation and cleaning of high-purity silicon base 1
High-purity silicon base 1 is bought by market, crystal orientation<100>, resistivity>1000 Ω cm, will be into before epitaxial growth
Row cleaning.Successively it is cleaned by ultrasonic 5 minutes 2 times with carbon tetrachloride, acetone is cleaned by ultrasonic 5 minutes 3 times, and alcohol is cleaned by ultrasonic 5 minutes 3
It is secondary, it deionized water repeated flushing 10 times, is dried with nitrogen.
B. the preparation of hearth electrode 2 is buried
Before ion implanting, plasma enhanced chemical vapor deposition SiO is first used2As passivation layer 5, SiO2Thickness
For 10nm.To prevent the channelling effect in ion implantation process, the beam direction of ion implanting deviates 7 ° of channel direction, ion note
Entering energy is 180KeV, implantation dosage 5E15cm2As ion.To avoid the spontaneous annealing in injection process, when injection, is served as a contrast
Bottom temperature is room temperature.In order to reduce diffusion of the impurity in annealing process to the greatest extent, we use RTA method, anneal in nitrogen atmosphere
Middle progress is enclosed, annealing temperature is 850 DEG C, time 30s.Increase gas flow after annealing, extra heat is taken away, Ke Yiqi
To the effect of short annealing, temperature allows silicon wafer natural cooling when dropping to 200 DEG C.Sample after annealing is immersed in HF solution
26 DEG C of processing 30s of middle constant temperature, erode the oxide layer on surface.
C. epitaxial growth absorbed layer 3, barrier layer 4
The absorbed layer 3 that epitaxial deposition obtains is with a thickness of 21 μm, doping concentration 3.5E17cm3.Its processing step is as follows:
At a temperature of 630 DEG C through-current capacity be 150slm hydrogen 5min be used for degasification, then increase temperature sequentially into 670 DEG C, 850 DEG C,
1090 DEG C, 1095 DEG C, etch 0.5min in the HCl that flow is 1slm later, then 1095 DEG C at a temperature of, be with flow
The hydrogen gas washing 1min of 150slm, the gas and its flow used in growth course are respectively as follows: SiHCl3, 6slm, H2, 205slm,
PH3, 550sccm, last gas washing cooling.
The barrier layer 4 that epitaxial deposition obtains is with a thickness of 7 μm, doping concentration 1E14cm3.Its processing step is as follows: with stream
Amount is 50slm, and the hydrogen that revolving speed is 40r/min leads to 3min and carries out degasification, temperature is then increased, in flow 80slm, revolving speed 60r/
It is warming up to 851 DEG C in the hydrogen stream of min and needs 0.2min, is risen in flow 90slm, the hydrogen stream of revolving speed 60r/min from 851 DEG C
5min is needed to 1140 DEG C, keeps 0.2min, the gas used in growth course later and its flow difference in this temperature
Are as follows: SiHCl3, 8.5slm, H2, 90slm, 60r/min, last gas washing.
D. top electrode ion implanted region 8 is made
Fig. 4 is the sectional view done after top electrode ion implanted region 8；Step process is similar to burial hearth electrode 2, sees B. not
It is 60KeV, implantation dosage 3E14cm with place ion implantation energy2With need to make ion implanting by lithography before ion implanting
Figure, corrosion obtain square hole.Its lithography step is as follows: arrangement dark room conditions, and it is logical to be put into spin coating from refrigerator taking-up photoresist
It is stand-by in wind cabinet.After epitaxial wafer is cleaned by conventional carbon tetrachloride, acetone, alcohol, deionized water, it is dried with nitrogen, 100
DEG C baking water removal.About after ten minutes, take out epitaxial wafer carry out spin coating, condition be at the uniform velocity 2500 revs/min, spin coating time 30 seconds,
2.5 μm of photoresist thickness.After spin coating, epitaxial wafer is placed on 100 degrees Celsius of hot plates and carries out photoetching front baking, timing 3 minutes, by light
Photoresist puts back to refrigerator, with alcohol washes sol evenning machine.Meanwhile connection litho machine and mercury lamp power supply are preheated, and reticle is pacified
Loaded on litho machine.Etching condition is the time for exposure 24 seconds, and exposure intensity is determined by litho machine.After photoetching, development operation is carried out,
The proportion of developer solution and water be 1:1, developing time 50 seconds.After being dried with nitrogen, it is placed on after carrying out photoetching on 120 degrees Celsius of hot plates
It dries, timing 10 minutes.At this point, mercury lamp power supply is disconnected, photoetching electromechanical source disconnects after twenty minutes, and purpose to mercury lamp in order to cool down.
After twenty minutes, baking box power supply is closed.Under room temperature, the oxide layer of ion implanted regions is eroded in hydrofluoric acid.
E. deposit passivation layer 5
Fig. 5 is the sample in cross section figure after growth of passivation layer 5；It is deposited using plasma enhanced chemical vapor deposition method
Growing silicon oxide 300nm.
The alignment of F.V type groove
Fig. 6 is the sample in cross section figure after wet etching V-groove；It arranges dark room conditions, takes out photoresist from refrigerator and be put into
It is stand-by in spin coating vent cabinet.After epitaxial wafer is cleaned by conventional carbon tetrachloride, acetone, alcohol, deionized water, nitrogen is blown
It is dry, 100 DEG C of baking water removals.About after five minutes, it takes out epitaxial wafer and carries out spin coating, condition is at the uniform velocity 2500 revs/min, spin coating time
30 seconds.After spin coating, epitaxial wafer is placed on progress photoetching front baking on 100 degrees Celsius of hot plates, timing 3 minutes, photoresist is put back into ice
Case, with alcohol washes sol evenning machine.Meanwhile connection litho machine and mercury lamp power supply are preheated, and reticle is installed on litho machine
On.This step is lithographically alignment, needs reticle align with epitaxial wafer picture on surface, is nested, can expose.Etching condition is to expose
21 seconds between light time, exposure intensity is determined by litho machine.After photoetching, development operation is carried out, the proportion of developer solution and water is 1:1, is shown
The shadow time 60 seconds.After being dried with nitrogen, it is placed on after carrying out photoetching on 120 degrees Celsius of hot plates and dries, timing 15 minutes.At this point, by mercury lamp
Power supply disconnects, and photoetching electromechanical source disconnects after twenty minutes, and purpose to mercury lamp in order to cool down.After twenty minutes, baking box power supply is closed.Photoetching
Deep etching 32um is carried out to sample with TEMAH solution later.
G. photoetching exposes the top electrode ion implanted region 8 of square hole
It arranges dark room conditions, takes out photoresist from refrigerator and be put into spin coating vent cabinet for use.It will be outer after corrosion treatment
It after prolonging piece by conventional carbon tetrachloride, acetone, alcohol, deionized water cleaning, is dried with nitrogen, 100 DEG C of baking water removals.About 3 points
Zhong Hou takes out epitaxial wafer and carries out spin coating, and condition is at the uniform velocity 1500 revs/min, spin coating time 30 seconds.After spin coating, epitaxial wafer is put
Photoetching front baking is carried out on 100 DEG C of degrees Celsius of hot plates, timing 3 minutes, photoresist is put back into refrigerator, with alcohol washes sol evenning machine.
Meanwhile connection litho machine and mercury lamp power supply are preheated, and reticle is installed on litho machine.This step is lithographically alignment, needs
It wants reticle align with epitaxial wafer picture on surface, is nested, can expose.Etching condition is the time for exposure 21 seconds, exposure intensity
It is determined by litho machine.Then 3-5min of baking on 120 DEG C of hot plate are placed on.Carry out pan-exposure again later, the time for exposure is
1.5min.After photoetching, development operation is carried out, the proportion of developer solution and water is 1:1, developing time 35 seconds.After being dried with nitrogen, it is placed on
It is dried after carrying out photoetching on 120 degrees Celsius of hot plates, timing 15 minutes.At this point, mercury lamp power supply is disconnected, photoetching electromechanical source is after twenty minutes
It disconnects.After twenty minutes, baking box power supply is closed.
H. rf magnetron sputtering plates electrode interconnection area 6
Rf magnetron sputtering is aluminized with a thickness of 0.6 μm.
I. the aluminium except 6 domain of top electrode interconnecting area is eroded
Epitaxial wafer is placed in+10% aqueous solution of+10% nitric acid of 80% phosphoric acid, is reacted under 25 degrees Celsius of water bath condition
About 30 seconds, corrode Al.
J. photoresist is removed
Epitaxial wafer after upper step process is soaked in acetone, 25 degrees Celsius of water-bath 10 minutes, takes out epitaxial wafer, leaching
Essence of steeping in wine 3 times 5 minutes each, then is rinsed 5-10 times with deionized water, is dried with nitrogen.
K. photoetching, the silica in 7 region of wet etching top electrode
It arranges dark room conditions, takes out photoresist from refrigerator and be put into spin coating vent cabinet for use.It will be outer after corrosion treatment
It after prolonging piece by conventional carbon tetrachloride, acetone, alcohol, deionized water cleaning, is dried with nitrogen, 100 DEG C of baking water removals.About 3 points
Zhong Hou takes out epitaxial wafer and carries out spin coating, and condition is at the uniform velocity 2000 revs/min, spin coating time 40 seconds.After spin coating, epitaxial wafer is put
Photoetching front baking is carried out on 100 DEG C of degrees Celsius of hot plates, timing 4 minutes, photoresist is put back into refrigerator, with alcohol washes sol evenning machine.
Meanwhile connection litho machine and mercury lamp power supply are preheated, and reticle is installed on litho machine.This step is lithographically alignment, needs
It wants reticle align with epitaxial wafer picture on surface, is nested, can expose.Etching condition is the time for exposure 90 seconds, exposure intensity
It is determined by litho machine.After photoetching, development operation is carried out, the proportion of developer solution and water is 1:1, developing time 15 minutes.Nitrogen is blown
After dry, it is placed on after carrying out photoetching on 110 degrees Celsius of hot plates and dries, timing 10 minutes.At this point, mercury lamp power supply is disconnected, photoetching is electromechanical
Source disconnects after twenty minutes.After twenty minutes, baking box power supply is closed.Under room temperature, the oxidation in 7 region of top electrode is eroded in hydrofluoric acid
Silicon.
K. the figure of square period array of circular apertures is lithographically derived in 7 region of top electrode
Fig. 3 is the SEM figure of square period array of circular apertures, arranges dark room conditions, and taking-up photoresist is put into even from refrigerator
It is stand-by in glue vent cabinet.After sample after corrosion is rinsed by conventional carbon tetrachloride, acetone, alcohol, deionized water, nitrogen
Drying, 100 DEG C of baking water removals.After about 3 minutes, takes out sample and carry out spin coating, condition is at the uniform velocity 2000 revs/min, 40 seconds.It is even
Piece is placed on to front baking 1.5min on 95 DEG C of hot plate after glue, photoresist is put back into refrigerator and alcohol washes sol evenning machine.Meanwhile
It connects litho machine and mercury lamp power supply is preheated, and reticle is installed on litho machine.This step is lithographically alignment, needs photoetching
Version aligns with epitaxial wafer picture on surface, is nested, can expose.Etching condition is that the time parameter of exposure is set as 20s, is exposed
Intensity is determined by litho machine.Expose soft baking 1.5min on the hot plate for need for piece to be put into after the completion 100 DEG C.We set later
Pan-exposure parameter be 45s.After photoetching, development operation is carried out, we, which put it in RZX-3038 developer solution stoste, develops
35s obtains figure.At this point, mercury lamp power supply is disconnected, photoetching electromechanical source disconnects after twenty minutes.
L. the aluminium film of rf magnetron sputtering vapor deposition 100nm thickness
M. removing obtains square period array of circular apertures
Sample, which is put into ultrasonic vibration 1 minute or so in acetone soln, to finally obtain the photoresist lift off on surface
Square period array of circular apertures.Sample is taken out, immersion alcohol 3 times 5 minutes each, then is rinsed 5-10 times with deionized water, and nitrogen is blown
It is dry.K. contact conductor production gold wire bonder bonding gold wire and electrode, draw detector lead, complete detector production, side
It can be used for testing.
Test result
By process above process, the detector chip of complete wavelength selection semiconductor light conductive structures is obtained.
In order to test device performance, chip is packed into Dewar bottle, and the gold thread in respective electrode is welded to Dewar with indium
On bottle pin, mechanical pump is vacuumized 2 hours.
Liquid nitrogen is poured into Dewar bottle, is tested under cryogenic conditions.
Fig. 8 is the photoelectricity for not adding square period array of circular apertures and the detector for doing square period array of circular apertures respectively
Flow response spectra.From the detector photocurrent response spectrum of Fig. 8 it can be seen that, not plus the photoelectric respone peak position of the detector of structure
At 24.65 μm, the response peak with structured detector is located at 27.68 μm., with Fig. 7, Fig. 7 is on intrinsic silicon respectively for this
The transmitted spectrum that the test of the square period array of circular apertures of aluminium and theoretical modeling obtain, period are 8 μm, and circle hole radius is 2 μm
27.47 μm of Resonance Transmission peak position of array of circular apertures be very close.It can be seen that the introducing of square period array of circular apertures
The surface plasmon resonance of metallic aluminium Yu silicon substrate contact surface is realized, the photocurrent response light of detector has admirably been tuned
Spectrum, realizes wavelength selection performance, haves laid a good foundation for the preparation of multispectral infrared detector.
What has been described above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill of the art
For personnel, under the premise of not departing from core technical features of the present invention, several improvements and modifications can also be made, these improvement
It also should be regarded as protection scope of the present invention with retouching.
Claims (1)
1. a kind of wavelength selection Si base semiconductor photoconduction mid and far infrared based on surface phasmon stops impurity band detector,
It is characterized in that, sequentially consisting of high-purity silicon base (1), prepared on high-purity silicon base (1) by ion implanting mode
The burial hearth electrode (2) of low-resistivity, epitaxial growth is highly doped on burial hearth electrode (2) prepared by ion implanting mode
Absorbed layer (3), impurity band barrier layer (4), in the passivation layer (5) of impurity band barrier layer (4) disposed thereon, the impurity band resistance
Barrier (4) is equipped with top electrode interconnecting area (6) and top electrode (7), and the top electrode (7) is the square formed by aluminium film
Period array of circular apertures, the detector further include out to the V-groove of HIGH-PURITY SILICON substrate (1), the square period circular hole battle array
Column are the structure of through-hole comprising multiple continuous vertical sections, the interface of square the period array of circular apertures and electrode interconnection area (6)
It is in infrared ray excited lower generation surface phasmon；
Specific preparation process is as follows for the detector:
1) it buries the preparation of hearth electrode (2): being covered on high purity silicon substrate (1) surface by ion implanting and quick high-temp annealing preparation
Buried end electrode (2)；
2) growth of highly doped absorbed layer (3), impurity band barrier layer (4): the highly doped absorbed layer of chemical vapor deposition extension is utilized
(3), impurity band barrier layer (4)；
3) deposition of passivation layer: plasma chemical vapor deposition (PECVD) growth of passivation layer is used；
4) acquisition of V-groove: V-groove is formed using the method for ultraviolet photolithographic, wet etching；
The preparation of top electrode interconnecting area (6) and top electrode (7): annealing preparation top electrode is combined using ultraviolet photolithographic, magnetron sputtering
Interconnecting area；
The array period for the square period array of circular apertures that the aluminium film is formed is 8 μm, and circle hole radius is 2 μm；State
The highly doped absorbed layer (3) of epitaxial growth is on burial hearth electrode (2) prepared by ion implanting mode with a thickness of 21 μm, impurity band
Barrier layer (4) is with a thickness of 7 μm；Epitaxial growth is highly doped on the burial hearth electrode (2) prepared in ion implanting mode
Miscellaneous absorbed layer (3) doping concentration is 3.5E17cm3, dopant gas species PH3, impurity band barrier layer (4) doping concentration is
1E13cm3。
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