CN114899256A - Preparation method of blue light detection chip with sub-wavelength structure - Google Patents
Preparation method of blue light detection chip with sub-wavelength structure Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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Abstract
The invention discloses a preparation method of a blue light detection chip with a sub-wavelength structure, which comprises the steps of selecting a silicon dioxide sheet, and sequentially carrying out ultrasonic cleaning treatment and drying treatment on the silicon dioxide sheet; performing evaporation treatment on the silicon dioxide sheet based on a vacuum environment to generate an aluminum metal layer; depositing a silicon epitaxial layer on the upper surface of the aluminum metal layer, and processing the silicon epitaxial layer by a photoetching process and an ion implantation method to generate silicon epitaxial layers and silicon dioxide cylindrical arrays with different dopings; and preparing the gold micro-nano structure array through a photoetching process and a coating process, and preparing the blue light detection chip with the sub-wavelength structure. The manufacturing method of the invention has high integration level and can realize batch production, and the blue light detection chip obtained by the manufacturing method has higher quantum efficiency and wavelength selectivity. The preparation method of the blue light detection chip with the sub-wavelength structure can be widely applied to the technical field of photoelectricity.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a preparation method of a blue light detection chip with a sub-wavelength structure.
Background
The Visible Light Communication (VLC) technology is a communication method in which light in a visible light band is used as an information carrier, and an optical signal is directly transmitted in the air without a transmission medium such as an optical fiber or a wired channel. The communication technology has the characteristics of low energy consumption, environmental protection, high safety and the like, the VLC system mainly comprises parts such as signal modulation coding, light source emission, light source transmission, light signal reception, signal demodulation and the like, wherein a receiving end for converting light signals into electric signals is one of important links of the VLC system, and the quality of the performance of the receiver can directly influence the quality of the whole system. A conventional VLC receiving system is composed of an optical part and an electrical part, wherein the optical part includes a receiving-end optical antenna, a filter and a detection chip. The optical antenna mainly achieves beam shaping of the emitted light so that the light is accurately emitted towards the receiving system. The filter plate mainly removes stray light and other wave bands of visible light without loading signals. The detection chip is an essential part of the receiving system and has the function of converting optical signals into electric signals. At present commercial visible light detector's spectral response scope is 320nm-730nm, the sensitivity crest is about 560nm, however, the visible light that bears the weight of the signal is monochromatic light, other visible lights just become interference light, and the response wavelength range of detector is big, will make the noise increase of detector, then the performance of detector also can receive the interference, so, an additional filter usually before surveying the chip, most interference light and stray light can be filtered out to the filter, but the light intensity that can make incident light according to the degree that the filter filtered out can change, the filter is effectual, incident light intensity can weaken thereupon, the performance that can make the detector reduces equally, current scheme does not solve actual problem, lead to the absorption efficiency of blue light unsatisfactory.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a method for manufacturing a blue light detection chip with a sub-wavelength structure, where the blue light detection chip with a sub-wavelength structure manufactured by the method can filter most of stray light and improve absorption efficiency of blue light.
In order to achieve the above object, the technical solution of the present invention comprises the following steps:
s1, selecting a silicon dioxide sheet, and sequentially carrying out ultrasonic cleaning treatment and drying treatment on the silicon dioxide sheet;
s2, performing evaporation treatment on the silicon dioxide sheet based on a vacuum environment to generate an aluminum metal layer;
s3, depositing a silicon layer on the upper surface of the aluminum metal layer, and processing the silicon layer through a photoetching process and an ion implantation method to generate silicon epitaxial layers and silicon dioxide cylindrical arrays with different doping;
s4, preparing the gold micro-nano structure array through a photoetching process and a coating process, and preparing the blue light detection chip with the sub-wavelength structure.
Further, the thickness of the silicon dioxide sheet is 0.5-50 μm.
Further, the step of selecting the silicon dioxide sheet, and sequentially performing ultrasonic cleaning treatment and drying treatment on the silicon dioxide sheet specifically comprises:
s11, selecting a silicon dioxide sheet, and carrying out ultrasonic cleaning treatment on the silicon dioxide sheet through a cleaning solution to obtain a cleaned silicon dioxide sheet;
s12, drying the cleaned silicon dioxide sheet by nitrogen to obtain a dried silicon dioxide sheet;
and S13, putting the dried silicon dioxide sheet into a vacuum oven for drying treatment.
Further, the thickness of the aluminum metal layer is 10 nm-500 nm.
Further, the step of depositing a silicon layer on the upper surface of the aluminum metal layer and processing the silicon layer by a photolithography process and an ion implantation method to generate silicon epitaxial layers and silicon dioxide cylindrical arrays with different dopings specifically includes:
s31, depositing a silicon layer on the upper surface of the aluminum metal layer in a deposition furnace by a plasma enhanced chemical vapor deposition method;
and S32, processing the silicon epitaxial layer through a photoetching process and an ion implantation method to generate the silicon epitaxial layer with different doping and the silicon dioxide cylindrical array.
Further, the silicon layer includes p + Type silicon epitaxial layer, p-type silicon epitaxial layer, i-type intrinsic silicon epitaxial layer, n + Several types of type silicon epitaxial layers and n-type silicon epitaxial layers are combined, the combination direction of the silicon epitaxial layers comprises a vertical direction and a horizontal direction, and the silicon epitaxial layers are arranged in the vertical direction and the horizontal directionThe thickness of the silicon layer is 1-10 μm.
Further, when the silicon epitaxial layer combination direction is the horizontal direction, the method further comprises the steps of spin-coating a protective layer on the aluminum metal layer by utilizing a photoetching process, depositing an insulating silicon dioxide layer on the surface of the aluminum metal layer by carrying out silane thermal decomposition treatment, and removing the protective layer after the treatment.
Furthermore, the thickness of the silicon dioxide cylinder array is 1-10 μm, the radius is 50-300 nm, and the period is 300-500 nm.
Further, the coating process comprises evaporation coating, magnetron sputtering and electroforming methods.
Further, the gold micro-nano structure comprises a column shape, an annular shape and a strip shape, the period of the gold micro-nano structure array is 20 nm-800 nm, the radius of the column shape is 5 nm-100 nm, the radius of the annular inner ring is 2 nm-100 nm, the radius of the annular outer ring is 5 nm-400 nm, the width of the strip shape is 5 nm-100 nm, and the length of the strip shape is 300 nm-500 nm.
The method has the beneficial effects that: the manufacturing method of the invention combines the micro-optoelectronic mechanical system (MOEMS) process with the Plasma Enhanced Chemical Vapor Deposition (PECVD), magnetron sputtering, evaporation coating and other processes, and the characteristics of the MOEMS process such as batch and high integration level can ensure that the silicon dioxide column array and the gold micro-nano structure array have better uniformity and consistency, meanwhile, the integrated preparation is suitable for manufacturing large-batch arrays and can improve the working efficiency, the invention prepares the silicon dioxide cylindrical array in the silicon layer by the ion implantation method, by changing the parameters of the silicon dioxide column array, the reflection efficiency of the detection chip to incident visible light and the selectivity to visible light wave bands are improved, and further, a gold micro-nano structure array is prepared on the upper surface of the silicon layer by an evaporation method, so that the absorption efficiency of blue light in the incident visible light is improved, and the volume of a detector system is not increased while most of stray light is filtered.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a blue light detecting chip with a sub-wavelength structure according to the present invention;
FIG. 2 is a vertical sectional view of a silicon layer arranged in a vertical direction in a method for manufacturing a blue light detecting chip having a subwavelength structure according to the present invention;
FIG. 3 is a longitudinal sectional view showing a silicon layer arranged in a horizontal direction in a method for manufacturing a blue light detecting chip having a subwavelength structure according to the present invention;
FIG. 4 shows a vertical (p) direction of a silicon epitaxial layer of a blue light detecting chip with a sub-wavelength structure according to the present invention + →p→p + →p→n + ) A manufacturing process flow chart of the arrangement;
FIG. 5 shows a vertical (n) direction of a silicon epitaxial layer of a blue light detecting chip with a sub-wavelength structure according to the present invention + →n→n + →n→p + ) A manufacturing process flow chart of the arrangement;
FIG. 6 shows a vertical (n) direction of a silicon epitaxial layer of a blue light detecting chip with a sub-wavelength structure according to the present invention + →i→p + ) A manufacturing process flow chart of the arrangement;
FIG. 7 shows a silicon epitaxial layer in the horizontal direction (n) of a blue light detecting chip with a sub-wavelength structure according to the present invention + →n→n + →n→p + ) A manufacturing process flow chart of the arrangement;
FIG. 8 shows a silicon epitaxial layer in the horizontal direction (n) of a blue light detecting chip with a sub-wavelength structure according to the present invention + →i→p + ) A flow chart of the arranged manufacturing process.
Reference numerals: 1. a substrate; 2. an aluminum metal layer; 3. p is a radical of + A type silicon epitaxial layer; 4. a p-type silicon epitaxial layer; 5. n is + A type silicon epitaxial layer; 6. an n-type silicon epitaxial layer; 7. an i-type intrinsic silicon epitaxial layer; 8. a gold micro-nano structure array; 9. a cylindrical array of silicon dioxide; 10. an insulating silicon dioxide layer.
Detailed Description
The invention is described in further detail below with reference to the figures and the specific embodiments. The step numbers in the following embodiments are provided only for convenience of illustration, the order between the steps is not limited at all, and the execution order of each step in the embodiments can be adapted according to the understanding of those skilled in the art.
Referring to fig. 1, the invention provides a method for preparing a blue light detection chip with a sub-wavelength structure, comprising the following steps:
s1, selecting a silicon dioxide sheet, and sequentially carrying out ultrasonic cleaning treatment and drying treatment on the silicon dioxide sheet;
specifically, the thickness of the silicon dioxide sheet is 0.5-50 μm, and the drying treatment process comprises the steps of drying the silicon dioxide sheet by using nitrogen firstly and then drying the silicon dioxide sheet by using a vacuum oven.
S2, performing evaporation treatment on the silicon dioxide sheet based on a vacuum environment to generate an aluminum metal layer 2;
specifically, the thickness of the aluminum metal layer 2 is 10nm to 500 nm.
S3, depositing a silicon layer on the upper surface of the aluminum metal layer, and processing the silicon epitaxial layer through a photoetching process and an ion implantation method to generate silicon epitaxial layers with different doping and a silicon dioxide cylindrical array 9;
specifically, the plasma enhanced chemical vapor deposition method comprises the specific process of performing deposition treatment on the upper surface of the aluminum metal layer 2 by a vapor deposition method in a deposition furnace to obtain a silicon layer, wherein the silicon layer comprises p + Type silicon epitaxial layer 3, p-type silicon epitaxial layer 4, i-type intrinsic silicon epitaxial layer 7, n + The silicon epitaxial layer structure comprises a silicon epitaxial layer 5 and an n-type silicon epitaxial layer 6, wherein the combination direction comprises a vertical direction and a horizontal direction, the thickness of the silicon layer is 1 mu m-10 vm, when the combination direction of the silicon epitaxial layers is the horizontal direction, the silicon epitaxial layer structure further comprises a protective layer which is formed by spin-coating the aluminum metal layer through a photoetching process, an insulating silicon dioxide layer is deposited on the surface of the aluminum metal layer through silane thermal decomposition treatment, and the protective layer is removed after the treatment.
S4, preparing the gold micro-nano structure array 8 through a photoetching process and a coating process, and preparing the blue light detection chip with the sub-wavelength structure.
Specifically, the thickness of the silicon dioxide cylindrical array 9 is 1-10 μm, the radius is 50-300 nm, the period is 300-500 nm, the coating process comprises evaporation coating, magnetron sputtering and electroforming methods, the gold micro-nano structure comprises a column shape, an annular shape and a strip shape, the period of the gold micro-nano structure array 8 is 20-800 nm, the radius of the column shape is 5-100 nm, the radius of an annular inner ring is 2-100 nm, the radius of an annular outer ring is 5-400 nm, the width of the strip shape is 5-100 nm, and the length of the strip shape is 300-500 nm.
The blue light detection chip with the sub-wavelength structure prepared by the method of the invention refers to fig. 2 and fig. 3;
the preparation method of the invention is as follows:
detailed description of the preferred embodiment
Referring to fig. 4, a silicon dioxide sheet is selected as a substrate 1 of a chip, the chip is placed in a cleaning solution for ultrasonic cleaning, is dried by nitrogen, is finally placed in a vacuum oven for drying to obtain a silicon dioxide substrate, is then respectively wiped on the surface of the substrate 1 by using a polishing solution and an alcohol ether mixed solution, is then rapidly placed in a vacuum chamber for evaporation, the pressure in the vacuum chamber is as low as possible during evaporation to reduce the oxidation of aluminum, the substrate 1 cannot be heated, the chip is further cleaned, is placed in a PECVD deposition furnace, 1-10 mu m silicon layers are enhanced and deposited by plasmas, each epitaxial layer is deposited by combining PECVD deposition and ion implantation, the vertical arrangement direction of the epitaxial layers of the silicon layers is p + →p→p + →p→n + The chip is required to be thoroughly cleaned before each epitaxial layer is manufactured, then a mask pattern of the silicon dioxide column array is photoetched on the surface of the silicon layer through an MOEMS (metal-oxide-semiconductor field effect transistor) process, the silicon dioxide column array and the gold micro-nano structure array 8 have good uniformity and consistency due to the characteristics of mass production and high integration of the MOEMS process, meanwhile, the integrated preparation is suitable for manufacturing of the mass array and can improve the working efficiency, then the silicon dioxide column array is manufactured through an ion implantation process, and the mask layer is removed, wherein the mask material can be metal, photoresist, polyimide, polydimethylsiloxane and other materials. Cleaning the chip again, then spin-coating a protective layer on the upper surface of the silicon, making a mask pattern by using a photoetching process, finally preparing a gold micro-nano structure array 8 by using methods such as evaporation coating, magnetron sputtering, electroforming and the like, and finally removing the protective layer to obtain the blue light detection chip with the sub-wavelength structure.
Detailed description of the invention
Referring to fig. 5, the preparation method is the same as the first embodiment, except that the vertical arrangement direction of the silicon layer epitaxial layer further includes: n is + →n→n + →n→p + 。
Detailed description of the preferred embodiment
Referring to fig. 6, the preparation method is the same as the first embodiment, except that the vertical arrangement direction of the silicon layer epitaxial layer further includes: n is + →i→p + 。
Detailed description of the invention
Referring to fig. 7, the preparation method is the same as the first embodiment, and the difference is that the horizontal arrangement direction of the silicon layer epitaxial layer further includes: n is + →n→n + →n→p + 。
Detailed description of the preferred embodiment
Referring to fig. 8, the preparation method is the same as the first embodiment, except that the horizontal arrangement direction of the silicon layer epitaxial layer further includes: n is + →i→p + 。
The technical scheme of the invention is as follows:
the characteristics of mass and high integration of the MOEMS process can ensure that the silicon dioxide column array and the gold micro-nano structure array 8 have better uniformity and consistency, and the integrated preparation is suitable for the manufacture of mass arrays and can improve the working efficiency, the structure of the blue light detection chip with the sub-wavelength structure can effectively weaken the reflectivity of blue light on the surface of the detection chip and the transmissivity of the detection chip, simultaneously enhance the reflectivity of visible light of other wave bands on the surface of the chip, the interface of the gold micro-nano structure arranged on the upper surface of the chip and a silicon layer excites a plasmon mode, and a guide film, a base film and a cavity film excited between a silicon dioxide column in the silicon layer and an air and aluminum metal layer 2 are mutually coupled, so that the reflection, projection and absorption of the chip to the visible light are changed, and the gold micro-nano structure on the upper surface of the chip is far smaller than the incident wavelength, therefore what arouse is local surface plasmon, can improve the absorptivity of chip, and air, silicon layer and aluminium metal level 2 have constituted similar optical fiber structure simultaneously, and then continue reinforcing silicon to the absorption of blue light, so novel detection chip has also improved the absorptivity of blue light when changing wavelength selectivity to the quantum efficiency and the responsivity of device have been improved.
The contents in the above method embodiments are all applicable to the present system embodiment, the functions specifically implemented by the present system embodiment are the same as those in the above method embodiment, and the beneficial effects achieved by the present system embodiment are also the same as those achieved by the above method embodiment.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A preparation method of a blue light detection chip with a sub-wavelength structure is characterized by comprising the following steps:
s1, selecting a silicon dioxide sheet, and sequentially carrying out ultrasonic cleaning treatment and drying treatment on the silicon dioxide sheet;
s2, performing evaporation treatment on the silicon dioxide sheet based on a vacuum environment to generate an aluminum metal layer;
s3, depositing a silicon layer on the upper surface of the aluminum metal layer, and processing the silicon layer through a photoetching process and an ion implantation method to generate silicon epitaxial layers and silicon dioxide cylindrical arrays with different doping;
s4, preparing the gold micro-nano structure array through a photoetching process and a coating process, and preparing the blue light detection chip with the sub-wavelength structure.
2. The method for preparing the blue light detection chip with the sub-wavelength structure as claimed in claim 1, wherein the thickness of the silicon dioxide sheet is 0.5 μm to 50 μm.
3. The method for preparing the blue light detection chip with the sub-wavelength structure according to claim 2, wherein the step of selecting the silicon dioxide sheet, and sequentially performing ultrasonic cleaning treatment and drying treatment on the silicon dioxide sheet comprises:
s11, selecting a silicon dioxide sheet, and carrying out ultrasonic cleaning treatment on the silicon dioxide sheet through a cleaning solution to obtain a cleaned silicon dioxide sheet;
s12, drying the cleaned silicon dioxide sheet by nitrogen to obtain a dried silicon dioxide sheet;
and S13, putting the dried silicon dioxide sheet into a vacuum oven for drying treatment.
4. The method for manufacturing the blue light detection chip with the sub-wavelength structure according to claim 1, wherein the thickness of the aluminum metal layer is 10nm to 500 nm.
5. The method for preparing the blue light detection chip with the sub-wavelength structure according to claim 1, wherein the step of depositing a silicon layer on the upper surface of the aluminum metal layer and processing the silicon layer by a photolithography process and an ion implantation method to generate the silicon epitaxial layer and the silicon dioxide cylindrical array with different dopings specifically comprises:
s31, depositing a silicon layer on the upper surface of the aluminum metal layer in a deposition furnace by a plasma enhanced chemical vapor deposition method;
and S32, processing the silicon epitaxial layer through a photoetching process and an ion implantation method to generate the silicon epitaxial layer with different doping and the silicon dioxide cylindrical array.
6. The method of claim 5, wherein the silicon layer comprises p + Type silicon epitaxial layer, p-type silicon epitaxial layer, i-type intrinsic silicon epitaxial layer, n + The silicon epitaxial layer is formed by combining a plurality of types of type silicon epitaxial layers and n-type silicon epitaxial layers, the combination direction of the silicon epitaxial layers comprises a vertical direction and a horizontal direction, and the thickness of the silicon layer is 1-10 mu m.
7. The method according to claim 6, further comprising spin-coating a protective layer on the aluminum metal layer by using a photolithography process when the silicon epitaxial layer has a horizontal direction, performing a silane thermal decomposition process to deposit an insulating silicon dioxide layer on the surface of the aluminum metal layer, and removing the protective layer after the process.
8. The method for preparing a blue light detection chip with a subwavelength structure according to claim 1, wherein the thickness of the silicon dioxide cylindrical array is 1-10 μm, the radius is 50-300 nm, and the period is 300-500 nm.
9. The method for preparing the blue light detection chip with the sub-wavelength structure as claimed in claim 1, wherein the coating process comprises evaporation coating, magnetron sputtering and electroforming.
10. The method for preparing the blue light detection chip with the sub-wavelength structure according to claim 1, wherein the gold micro-nano structure comprises a column shape, a ring shape and a strip shape, the period of the gold micro-nano structure array is 20nm to 800nm, the radius of the column shape is 5nm to 100nm, the radius of the ring inner ring is 2nm to 100nm, the radius of the ring outer ring is 5nm to 400nm, the width of the strip shape is 5nm to 100nm, and the length of the strip shape is 300nm to 500 nm.
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