CN114899245A - Blue light band-pass silicon-based detection chip - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 239000010703 silicon Substances 0.000 title claims abstract description 103
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 103
- 238000001514 detection method Methods 0.000 title claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 50
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 43
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000010931 gold Substances 0.000 claims abstract description 40
- 229910052737 gold Inorganic materials 0.000 claims abstract description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000002086 nanomaterial Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 90
- 238000000034 method Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
The invention discloses a blue light band-pass silicon-based detection chip which comprises a substrate, an aluminum metal layer, a silicon dioxide cylindrical array and a gold micro-nano structure array, wherein the aluminum metal layer covers the upper surface of the substrate, the silicon layer is arranged on the upper surface of the aluminum metal layer, the silicon dioxide cylindrical array is arranged in the silicon layer, and the gold micro-nano structure array is arranged on the upper surface of the silicon layer. According to the invention, the silicon dioxide cylindrical array is prepared in the epitaxial layer of the silicon layer, so that the reflection efficiency of the detection chip to incident visible light is changed, and the gold micro-nano structure array is further prepared on the upper surface of the epitaxial layer of the silicon layer, so that the performance of the device is improved and the chip has the blue light band-pass effect. The blue-light band-pass silicon-based detection chip can be widely applied to the technical field of photoelectricity.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a blue light band-pass silicon-based detection chip.
Background
The Visible Light Communication (VLC) technology is a communication method in which light in a visible light band is used as an information carrier, and an optical signal is directly transmitted in the air without a transmission medium such as an optical fiber or a wired channel. The communication technology has the characteristics of low energy consumption, environmental protection, high safety and the like, and the VLC system mainly comprises signal modulation coding, light source emission, light source transmission, light signal receiving, signal demodulation and the like, wherein a receiving end for converting light signals into electric signals is one of important links of the VLC system, and the quality of the performance of the receiver can directly influence the quality of the whole system; the traditional VLC receiving system consists of an optical part and an electrical part, wherein the optical part comprises a receiving end optical antenna, a filter and a detection chip, the optical antenna mainly realizes the beam shaping of emitted light, so that the light is accurately emitted to the receiving system, and the filter mainly removes stray light and visible light of other wave bands without loading signals; however, the visible light carrying the signal is monochromatic light, other visible light becomes interference light, if the response wavelength range of the detector is large, the noise of the detector is increased, and then the performance of the detector is interfered.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a blue-light bandpass silicon-based detection chip, which can filter most of stray light and further improve the performance of the device without increasing the volume of the system.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the utility model provides a blue light band-pass silicon-based detection chip, includes basement, aluminium metal layer, silicon layer, silica cylinder array and gold micro-nano structure array, the upper surface of basement covers aluminium metal layer, the upper surface of aluminium metal layer is equipped with the silicon layer, set up silica cylinder array in the silicon layer, the silicon layer upper surface sets up gold micro-nano structure array, wherein:
the substrate is used for supporting the detection chip structure;
the aluminum metal layer is used as a lower electrode of the chip;
the silicon layer is used for absorbing photons and converting the photons into photon-generated carriers;
the silica cylinder array is used for changing the reflectivity and the transmissivity of visible light;
the gold micro-nano structure array is used for improving the absorption rate and wavelength selectivity of blue light.
Further, the substrate is a silicon dioxide substrate.
Further, the thickness of the silicon dioxide substrate is 0.5-50 μm.
Further, the upper surface of the substrate is covered with a layer of aluminum metal layer, and the thickness of the aluminum metal layer is 10 nm-500 nm.
Further, the upper surface of the aluminum metal layer is covered with a silicon layer, and the silicon layer is formed by p + Type silicon epitaxial layer, p-type silicon epitaxial layer, i-type intrinsic silicon epitaxial layer, n + The epitaxial layer comprises a plurality of types of silicon epitaxial layers and an n-type silicon epitaxial layer, and the combination direction comprises a vertical direction and a horizontal direction.
Further, when the combined direction of the silicon layers is the horizontal direction, an insulating silicon dioxide layer is added between the silicon layers and the aluminum metal layer, wherein the lower surface of the silicon layer is an insulating silicon dioxide layer, the lower surface of the insulating silicon dioxide layer is an aluminum metal layer, the lower surface of the aluminum metal layer is a substrate, and the thickness of the insulating silicon dioxide layer is 2 nm-2 μm.
Further, the thickness of the silicon layer is 1 μm to 10 μm.
Furthermore, a silicon dioxide cylindrical array is arranged in the silicon layer, the thickness of the silicon dioxide cylindrical array is 1-10 mu m, the radius of the silicon dioxide cylindrical array is 50-300 nm, and the period of the silicon dioxide cylindrical array is 300-500 nm.
Further, a gold micro-nano structure is arranged on the upper surface of the silicon layer, the gold micro-nano structure array is made of gold materials, and the gold micro-nano structure comprises a column shape, an annular shape and a strip shape.
Further, the period of the gold micro-nano structure array is 20 nm-800 nm, the column radius is 5 nm-100 nm, the annular inner ring radius is 2 nm-100 nm, the annular outer ring radius is 5 nm-400 nm, the strip width is 5 nm-100 nm, and the strip length is 300 nm-500 nm.
The device of the invention has the beneficial effects that: according to the invention, the silicon dioxide cylindrical array is prepared in the silicon layer, so that the reflection efficiency of the detection chip on incident visible light is changed, most of stray light is filtered, the gold micro-nano structure array is further prepared on the upper surface of the silicon layer, the absorption efficiency of blue light in the incident visible light is improved, the performance of the device can be improved while most of stray light is filtered, and the volume of the system is not increased.
Drawings
FIG. 1 is a longitudinal sectional view of a blue-light bandpass silicon-based detection chip of the present invention with silicon layers arranged in a vertical direction;
FIG. 2 is a longitudinal sectional view of a blue-light bandpass silicon-based detection chip of the present invention with silicon layers arranged in a horizontal direction;
FIG. 3 is a schematic structural diagram of a gold micro-nano structure array in a blue light band-pass silicon-based detection chip according to the invention;
FIG. 4 is a perspective view of a cylindrical gold micro-nano structure array in a blue light band-pass silicon-based detection chip according to the invention;
FIG. 5 is a perspective view of an annular gold micro-nano structure array in a blue light band-pass silicon-based detection chip;
FIG. 6 is a perspective view of a strip-shaped gold micro-nano structure array in the blue light band-pass silicon-based detection chip.
Reference numerals: 1. a substrate; 2. an aluminum metal layer; 3. p is a radical of + A type silicon epitaxial layer; 4. a p-type silicon epitaxial layer; 5. n is a radical of an alkyl radical + A type silicon epitaxial layer; 6. an n-type silicon epitaxial layer; 7. an i-type intrinsic silicon epitaxial layer; 8. a gold micro-nano structure array; 9. a cylindrical array of silicon dioxide; 10. an insulating silicon dioxide layer.
Detailed Description
The invention is described in further detail below with reference to the figures and the specific embodiments. The step numbers in the following embodiments are provided only for convenience of illustration, the order between the steps is not limited at all, and the execution order of each step in the embodiments can be adapted according to the understanding of those skilled in the art.
According to the invention, the reflection efficiency of visible light is changed by preparing the silicon dioxide cylindrical array 9, the absorption efficiency of blue light in the visible light is further improved by preparing the gold micro-nano structure array 8, the performance of a device can be improved while most of stray light is filtered, and the volume of the system is not increased.
Referring to fig. 1 and 2, the invention provides a blue light band-pass silicon-based detection chip, which comprises a substrate 1, an aluminum metal layer 2, a silicon layer, a silicon dioxide cylindrical array 9 and a gold micro-nano structure array 8, wherein the aluminum metal layer 2 covers the upper surface of the substrate 1, the silicon layer is arranged on the upper surface of the aluminum metal layer 2, the silicon dioxide cylindrical array 9 is arranged in the silicon layer, and the gold micro-nano structure array 8 is arranged on the upper surface of the silicon layer.
The substrate 1 is used for supporting a detection chip, wherein the substrate 1 is a silicon dioxide substrate, and the thickness of the silicon dioxide substrate is 0.5-50 μm.
The aluminum metal layer 2 is used as a lower electrode of the chip, wherein the upper surface of the substrate 1 is covered with a layer of the aluminum metal layer 2, and the thickness of the aluminum metal layer 2 is 10 nm-500 nm.
The silicon layer is used for absorbing photons and converting the photons into photon-generated carriers, wherein the upper surface of the aluminum metal layer is covered with a silicon layer which is formed by p + Type silicon epitaxial layer 3, p-type silicon epitaxial layer 4, i-type intrinsic silicon epitaxial layer 7, n + The silicon epitaxial layer comprises a silicon epitaxial layer 5 and an n-type silicon epitaxial layer 6, the combination direction comprises a vertical direction and a horizontal direction, when the combination direction of the silicon layers is the horizontal direction, a layer of insulating silicon dioxide layer is added between the silicon layers and an aluminum metal layer, the lower surface of the silicon layer is an insulating silicon dioxide layer, the lower surface of the insulating silicon dioxide layer is an aluminum metal layer 2, the lower surface of the aluminum metal layer 2 is a substrate 1, and the thickness of the insulating silicon dioxide layer is 2 nm-2 microns.
The silicon dioxide cylinder array 9 is used for changing the reflectivity and the transmissivity of visible light, wherein the silicon dioxide cylinder array 9 is arranged in the silicon layer, the thickness of the silicon dioxide cylinder array 9 is 1-10 micrometers, the radius is 50-300 nm, and the period is 300-500 nm.
Referring to fig. 3, the gold micro-nano structure array 8 is used for improving the absorption rate of blue light, wherein the gold micro-nano structure is arranged on the upper surface of the silicon layer, the gold micro-nano structure array 8 is made of gold materials, the gold micro-nano structure comprises a column shape, an annular shape and a strip shape, the period of the gold micro-nano structure array 8 is 20nm to 800nm, the radius of the column shape is 5nm to 100nm, the radius of the annular inner ring is 2nm to 100nm, the radius of the annular outer ring is 5nm to 400nm, the width of the strip shape is 5nm to 100nm, and the length of the strip shape is 300nm to 500 nm.
A schematic structural diagram of a blue light band-pass silicon-based detection chip when the gold micro-nano structure is cylindrical is shown in fig. 4;
a schematic structural diagram of a blue light band-pass silicon-based detection chip when the gold micro-nano structure is annular is shown in fig. 5;
the schematic structural diagram of the blue light band-pass silicon-based detection chip when the gold micro-nano structure is in a strip shape refers to fig. 6.
The technical scheme of the invention is as follows:
the structure of the blue light band-pass silicon-based detection chip can effectively weaken the reflectivity of blue light on the surface of the detection chip and the transmissivity of the detection chip, and simultaneously enhance the reflectivity of visible light in other wave bands on the surface of the chip, a plasmon mode is excited at the interface of a gold micro-nano structure and a silicon layer arranged on the upper surface of the chip, and a guide film, a base film and a cavity film excited between a silicon dioxide column in the silicon layer and air and an aluminum metal layer 2, and the modes of various types are mutually coupled, so that the reflection, transmission and absorption of the visible light by the chip are changed, the gold micro-nano structure on the upper surface of the chip is far smaller than the incident wavelength, so that the local surface plasmon is excited, the absorptivity of the chip can be improved, meanwhile, the air, the silicon layer and the aluminum metal layer 2 form a similar optical fiber structure, and further the absorption of the blue light by the silicon is continuously enhanced, so that the novel detection chip also improves the absorptivity of the blue light while changing the wavelength selectivity, therefore, the quantum efficiency and the responsivity of the device are improved, and the addition of a filter disc is omitted, so that the volume of the system is reduced.
The preparation method of the invention is as follows:
selecting a silicon dioxide sheet as a substrate 1 of the chip, putting the chip into cleaning liquid for ultrasonic cleaning, drying the chip by using nitrogen, finally putting the chip into a vacuum oven for drying to obtain a silicon dioxide substrate, wiping the surface of the substrate 1 by using polishing liquid and alcohol ether mixed liquid respectively, then quickly putting the substrate into a vacuum chamber for evaporation, wherein the pressure in the vacuum chamber is as low as possible during evaporation to reduce the oxidation of aluminum, and the substrate 1 cannot be heated simultaneouslyFurther cleaning the chip, putting the chip into a Plasma Enhanced Chemical Vapor Deposition (PECVD) deposition furnace, depositing a 2-10 mu m silicon layer by plasma enhancement, wherein the deposition of each epitaxial layer needs to be finished by combining PECVD deposition and ion implantation, and aiming at vertical distribution, the sequence of the silicon epitaxial layers comprises p from bottom to top + →p→p + →p→n + 、n + →n→n + →n→p + And n + →i→p + For horizontal placement, the epitaxial layer direction includes n + →n→n + →n→p + And n + →i→p + The method comprises the steps of thoroughly cleaning a chip before manufacturing each epitaxial layer, photoetching a mask pattern of a silicon dioxide column array on the surface of a silicon layer through a micro-electro-mechanical system (MOEMS) process technology, manufacturing the silicon dioxide column array by utilizing an ion implantation process, and removing the mask layer, wherein the mask material can be metal, photoresist, polyimide, polydimethylsiloxane and other materials. Cleaning the chip again, then spin-coating a protective layer on the upper surface of the silicon, making a mask pattern by using a photoetching process, finally preparing a gold micro-nano structure array 8 by using methods such as evaporation coating, magnetron sputtering, electroforming and the like, and finally removing the protective layer to obtain the blue-light band-pass silicon-based detection chip.
The contents in the method embodiments are all applicable to the system embodiments, the functions specifically implemented by the system embodiments are the same as those in the method embodiments, and the beneficial effects achieved by the system embodiments are also the same as those achieved by the method embodiments.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The utility model provides a chip is surveyed on blue light band-pass silica-based, its characterized in that, includes basement, aluminium metal floor, silicon layer, silica cylinder array and gold micro-nano structure array, the upper surface of basement covers aluminium metal floor, the upper surface of aluminium metal floor is equipped with the silicon layer, set up silica cylinder array in the silicon layer, the silicon layer upper surface sets up gold micro-nano structure array, wherein:
the substrate is used for supporting the detection chip structure;
the aluminum metal layer is used as a lower electrode of the chip;
the silicon layer is used for absorbing photons and converting the photons into photon-generated carriers;
the silica cylinder array is used for changing the reflectivity and the transmissivity of visible light;
the gold micro-nano structure array is used for improving the absorption rate and wavelength selectivity of blue light.
2. The blue bandpass silicon-based detection chip according to claim 1, wherein the substrate is a silicon dioxide substrate.
3. The blue-light band-pass silicon-based detection chip of claim 2, wherein the thickness of the silicon dioxide substrate is 0.5 μm to 50 μm.
4. The blue-light band-pass silicon-based detection chip of claim 1, wherein the upper surface of the substrate is covered with an aluminum metal layer, and the thickness of the aluminum metal layer is 10nm to 500 nm.
5. The blue-light band-pass silicon-based detection chip of claim 1, wherein the aluminum metal layer is covered with a silicon layer, and the silicon layer is formed by p + Type silicon epitaxial layer, p-type silicon epitaxial layer, i-type intrinsic silicon epitaxial layer, n + The epitaxial layer comprises a plurality of types of silicon epitaxial layers and an n-type silicon epitaxial layer, and the combination direction comprises a vertical direction and a horizontal direction.
6. The blue-light band-pass silicon-based detection chip of claim 5, wherein when the combination direction of the silicon layers is a horizontal direction, an insulating silicon dioxide layer is added between the silicon layers and the aluminum metal layer, wherein the lower surface of the silicon layer is the insulating silicon dioxide layer, the lower surface of the insulating silicon dioxide layer is the aluminum metal layer, the lower surface of the aluminum metal layer is a substrate, and the thickness of the insulating silicon dioxide layer is 2 nm-2 μm.
7. The blue-light bandpass silicon-based detection chip according to claim 6, wherein the thickness of the silicon layer is 1 μm to 10 μm.
8. The blue-light band-pass silicon-based detection chip of claim 1, wherein a silicon dioxide cylinder array is arranged in the silicon layer, the thickness of the silicon dioxide cylinder array is 1-10 μm, the radius of the silicon dioxide cylinder array is 50-300 nm, and the period of the silicon dioxide cylinder array is 300-500 nm.
9. The blue light band-pass silicon-based detection chip according to claim 1, wherein a gold micro-nano structure is arranged on the upper surface of the silicon layer, the gold micro-nano structure array is made of gold material, and the gold micro-nano structure comprises a column shape, an annular shape and a strip shape.
10. The blue light band-pass silicon-based detection chip of claim 9, wherein the period of the gold micro-nano structure array is 20nm to 800nm, the radius of a column is 5nm to 100nm, the radius of an annular inner ring is 2nm to 100nm, the radius of an annular outer ring is 5nm to 400nm, the width of a strip is 5nm to 100nm, and the length of the strip is 300nm to 500 nm.
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| CN109713081A (en) * | 2018-12-27 | 2019-05-03 | 中国科学院长春光学精密机械与物理研究所 | The production method of integrated silicon-based visible light detector array device |
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| 王浩冰等: "局域表面等离激元共振增强硅蓝光波段吸收特性研究", 《中国光学》, vol. 13, no. 6, 31 December 2020 (2020-12-31), pages 1362 - 1384 * |
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