CN205049772U - Periodic hole array structure's is equal from excimer sensor - Google Patents
Periodic hole array structure's is equal from excimer sensor Download PDFInfo
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- CN205049772U CN205049772U CN201520802224.4U CN201520802224U CN205049772U CN 205049772 U CN205049772 U CN 205049772U CN 201520802224 U CN201520802224 U CN 201520802224U CN 205049772 U CN205049772 U CN 205049772U
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Abstract
The utility model discloses a periodic hole array structure's is equal from excimer sensor, including the metal film, align to grid is provided with the hole array structure of unit in a N cycle on the metal film, and the hole array structure of unit in every cycle has seted up a centre bore for the center department at the metal film, is equipped with a pair of connecting hole in the outside symmetry of centre bore, the connecting hole all is connected with the centre bore through the nanometer slit of sculpture on the metal film, and centre bore, connecting hole and nanometer slit integrated into one piece and have a perfect understanding in the upper and lower surface of metal film, and it has the dielectric layer to pack at the inner space of centre bore, connecting hole and nanometer slit, wherein N's >= 2 positive integer. The utility model discloses a cycle hole array structure and joining nanometer slit technique, the messenger makes the sensor and compares with prior art, has optical transmittance height, small in size, simple manufacture's characteristics.
Description
Technical field
The utility model relates to a kind of sensor, is specifically related to a kind of phasmon sensor of periodic array of holes structure, belongs to micro-nano photon technology field.
Background technology
Optical anomaly transmission (ExtraordinaryOpticalTransmission, EOT) characteristic shows as: when light incides the metallic film with sub-wavelength period hole array, the efficiency of transmission of light obtains great enhancing, breaches the restriction of traditional aperture theory.Since the people such as Ebbesen in 1998 set forth this EOT phenomenon, obtain about research in this respect and paid close attention to widely, and obtained important application in many aspects.Meanwhile, scientific research personnel finds the parameter such as shape, metal material, angle of light degree in the cycle by changing hole array structure, golden film thickness, hole, effectively can regulate the position of transmission peaks, and the size of transmissivity.These all have extremely wide application prospect in bio-sensing, optical filter, new type light source and optical memory etc.
About the explanation of the Physical Mechanism of optical anomaly transmission (EOT) phenomenon, Genet and Ebbesen finds that the EOT phenomenon of nanohole array comes from being coupled of incident light and surface phasmon (SPPs): when hole array cycle corresponding to reciprocal lattice vector and the momentum matching of SPPs time, SPPs is easily excited, and passing hole is through the another side of film.Surface phasmon (SPPs) is a kind of special electromagnetic wave, is that the free electron generation collective oscillation of metal surface under the exciting of incident light produces.This special electromagnetic wave is propagated along the direction of metal surface, and is exponentially decaying perpendicular on the direction of metal surface, therefore is also referred to as conduction type surface phasmon.The very coarse metal film in surface or form curved-surface structure metal (as spheroid, cylinder etc.) around, its surface phasmon can not be propagated along interface with the form of ripple, but by the near surface of local in these structures, be called as local surface phasmon (LSPs), because LSPRs has the special performance of ability, minimized size and the electric field constraint overcoming diffraction limit, LSPRs has vital role at periodicity metal nano-void array structure (generally comprising the nanostructured of circle, rectangle, triangle or two kinds of different structure composite holes).
Along with the continuous progress of nano science, surface phasmon has developed in order to an emerging subject, and is widely used in the field such as biology, chemistry, information, the energy.In recent years, emerge in an endless stream about to the research of optical anomaly transmission EOT effect.Researchers by optimizing the parameters of array of subwavelength holes periodic structure, improve light transmissive performance one after another.Such as, the people such as LiuJQ in 2013 use two cover circular hole to be arranged in rectangle nano-pore array structure, and the people such as ZhangX in 2014 devise composite Nano hole array structure, all have important reference significance to the research of optical anomaly transmission EOT characteristic.
Along with the development of science and technology, sensor, as a kind of carrier of transmission information, has a wide range of applications in fields such as communication, medical treatment, military, automatic controls.But traditional sensor, due to the restriction by the condition such as volume, stability, well can not adapt to the needs of optronics technique development.And surface phasmon optical sensor is because of a series of advantages such as its volume are little, low in energy consumption, reliability is high, cause the attention of more and more people.But existing surface phasmon optical sensor is generally only arrange a kind of cycle hole array (as circular, rectangle) structure on metal film, the transmissivity of the light of the surface phasmon optical sensor of this kind of structure is low, and more difficult each parameter by adjustment hole array is to obtain the position can selecting transmission peaks.
Utility model content
For above-mentioned deficiency, technical problem to be solved in the utility model is to provide the phasmon sensor of the high periodic array of holes structure of a kind of light transmission, and is reached the object regulating its transmitted spectrum by each parameter changing hole array structure.
For solving the problems of the technologies described above, the utility model is achieved through the following technical solutions:
A kind of phasmon sensor of periodic array of holes structure, comprise metal film, the evenly distributed unit hole array structure being provided with N number of cycle on described metal film, the unit hole array structure in each cycle for offer a center pit on metal film, a pair connecting hole is provided with in the outer symmetrical of center pit, described connecting hole is all connected with center pit by the nano slit etched on metal film, and center pit, connecting hole and nano slit one-body molded and run through the upper and lower surface of metal film, center pit, the inner space of connecting hole and nano slit is filled with dielectric layer, the positive integer of wherein said N >=2.
In such scheme, the thickness of described metal film any one can meet the thickness of phasmon working sensor condition, and be the performance improving sensor, the thickness of described metal film is specifically as follows 50nm.
In such scheme, the width of described nano slit can be 25 ~ 55nm.
In such scheme, described dielectric layer is the residing in use surrounding environment (as air, liquid, solid etc.) of this phasmon sensor, is sound wave or the communication media of light wave in transmitting procedure.Therefore, described dielectric layer can be specifically transparent air layer, solid layer or other dielectric layers; Further, the specific inductive capacity of described dielectric layer can be 1.0 ~ 2.5.
In such scheme, for making processing simple and easy, the length of the unit hole array structure in each cycle and wide equal.
In such scheme, described center pit is specifically as follows circular hole, and described connecting hole is specifically as follows rectangular opening.
In such scheme, further, the diameter of described circular hole can be 40nm ~ 100nm.
In such scheme, further, the length of described rectangular opening can be more than or equal to the diameter of circular hole.
In such scheme, further preferably, the length of described rectangular opening equals the diameter of circular hole.
Compared with the phasmon sensor of existing hole array period structure, advantage of the present utility model is:
1, by adopting the unit hole array structure be made up of circular hole and the rectangular opening (being connected by nano slit between rectangular opening with circular hole) that is symmetrically set in circular hole both sides, on metal film, the cycle evenly distributedly arranges multiple identical unit hole array structure, utilize in this structure that SPPs and LSPRs is by the nano slit effect of intercoupling, be enhanced light transmissive phasmon sensor.It has, and light transmission is high, compact, the simple feature of making;
2, when making this phasmon sensor, by width or other structural parameters of the diameter of change metal circular hole, the length of rectangular opening and width, nano slit, make the phasmon sensor that obtains obtain the position can selecting transmission peaks, have high-transmission rate, can close to infrared spectrum.
Accompanying drawing explanation
Fig. 1 is wherein a kind of structural representation of the phasmon sensor of this non-periodic pore array structure.
Fig. 2 is the schematic diagram of the unit hole array structure of one-period in the phasmon sensor of this non-periodic pore array structure.
Fig. 3 is the phasmon sensor of this non-periodic pore array structure and the transmitted light spectrogram of comparative example.
Fig. 4 is transmitted light spectrogram when adopting different Circularhole diameter in the phasmon sensor of this non-periodic pore array structure.
Fig. 5 is the transmitted light spectrogram adopting different nm Slit width in the phasmon sensor of this non-periodic pore array structure.
Fig. 6 is dielectric layer in the phasmon sensor of this non-periodic pore array structure transmitted light spectrogram when adopting different specific inductive capacity.
Number in the figure is: 1, metal film, 2, circular hole, 3, rectangular opening, 4, nano slit;
The diameter of 2r, circular hole, the length of p, unit hole array structure, the length of a, rectangular opening, the width of b, rectangular opening, the width of d, nano slit.
Embodiment
Below in conjunction with specific embodiment, explanation is further explained to the utility model, but not in order to limit the utility model.
As shown in Figure 1, a kind of phasmon sensor of periodic array of holes structure, comprises metal film 1, and the thickness of described metal film 1 is 50nm, can also be other thickness certainly.The evenly distributed unit hole array structure being provided with N number of cycle on described metal film 1, the unit hole array structure in each cycle is as shown in Figure 2: for offering a center pit on metal film 1, a pair connecting hole is provided with in the outer symmetrical of center pit, described connecting hole is all connected with center pit by the nano slit 4 etched on metal film 1, and center pit, connecting hole and nano slit 4 is one-body molded and run through the upper and lower surface of metal film 1, dielectric layer is filled with, the positive integer of wherein said N >=2 in the inner space of center pit, connecting hole and nano slit 4.For meeting different optical sensor requirements, the specific inductive capacity of described medium is 1.0 ~ 2.5, and the width d of described nano slit 4 is 25 ~ 55nm.
In the present embodiment, the length of the unit hole array structure in each cycle and wide equal, is namely p.Described center pit is specially circular hole 2, can also be the hole of other shape and structures certainly, as rectangular opening, triangle etc.Described connecting hole is specially rectangular opening 3, can also be the hole of other any one shape and structures certainly, as circular hole, square hole, triangle etc.The diameter 2r of described circular hole 2 is 40nm ~ 100nm.The length of described rectangular opening 3 is more than or equal to the diameter of circular hole 2, and the concrete length a being preferably rectangular opening 3 equals the diameter of circular hole 2.
The utility model, by changing the diameter of circular hole 2, the width of nano slit 4 and the specific inductive capacity of medium, regulating position and the size of transmission peaks, thus obtaining a kind of at desirable wave band, the phasmon sensor with the spectrum of high-transmission rate.
During utility model works:
Gaussian beam is incident vertically downward and incident vertically upward and in the upper surface transmitted light outgoing of metal film 1 by the lower surface of metal film 1 in metal film 1 lower surface outgoing or Gaussian beam from the upper surface of metal film 1.When Gaussian beam be normally incident in metal film 1 wherein a surface time, the SPPs that adjacent circular holes 2 array produces and the LSPRs that produces of rectangular opening 3 array is intercoupled by nano slit 4, forms a powerful local electromagnetic field, greatly strengthen the transmission of light like this.
Below in conjunction with embody rule embodiment, following result is shown to the result of use of phasmon sensor:
As shown in Figure 3, for the transmitted light spectrogram of sensor of the present utility model and comparative example, wherein a comparative example is the phasmon sensor of the hole array period structure only having circular hole 2, and an other comparative example is the phasmon sensor of the hole array period structure not adopting nano slit 4 and be made up of circular hole 2 and rectangular opening 3 compound.Fig. 3 horizontal ordinate is lambda1-wavelength, and unit is the ordinate in nm, figure is transmissivity, is also referred to as transmission coefficient, and solid line is transmittance graph of the present utility model in the drawings, and close pecked line and dot-and-dash line are the transmittance graph of comparative example.Can obviously find out from Fig. 3, the utility model makes transmissivity obtain very large enhancing, is up to 0.82 after adopting nano slit 4 to connect adjacent circular hole 2 and rectangular opening 3, and comparative example is the highest by only 0.18 and 0.30.
As shown in Figure 4, for adopting transmitted light spectrogram during different circular hole 2 diameter in the phasmon sensor of this non-periodic pore array structure.Horizontal ordinate in figure and the expression of ordinate are identical with Fig. 3's, represent the radius r of 4 different circular holes 2 in the drawings with four kinds of different curves respectively, the radius r of circular hole 2 is followed successively by 20,30,40,50nm.From the result Fig. 4, along with the increase of circular hole 2 diameter 2r, transmissivity increases gradually, and blue shift appears in the position of transmission peaks, and the wavelength that namely transmission peaks is corresponding reduces.
As shown in Figure 5, for adopting the transmitted light spectrogram of the width d of different nano slit 4 in the phasmon sensor of this non-periodic pore array structure.Horizontal ordinate in figure and the expression of ordinate are identical with Fig. 3's, represent the width d of 4 different nano slits 4 in the drawings with four kinds of different curves respectively, the width d of nano slit 4 is respectively 25,35,45,55nm.Result from Fig. 5: along with the increase of the width d of nano slit 4, transmissivity increases gradually, the continuous blue shift in position of transmission peaks, the wavelength that namely transmission peaks is corresponding constantly reduces.
As shown in Figure 6, for the dielectric layer in this phasmon sensor adopts the transmitted light spectrogram of different specific inductive capacity.Horizontal ordinate in figure and the expression of ordinate are identical with Fig. 3's, and represent 4 differing dielectric constant ε of dielectric layer in the drawings respectively with four kinds of different curves, DIELECTRIC CONSTANT ε is respectively 1.0,1.5,2.0,2.5.Result from Fig. 6: along with the increase of the specific inductive capacity of dielectric layer, the position rule red shift of transmission peaks, the wavelength that namely transmission peaks is corresponding constantly increases, the reduction of simultaneous transmissivity.
These are only and embodiment of the present utility model is described; be not limited to the utility model; for a person skilled in the art; all within spirit of the present utility model and principle; any amendment of doing, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (9)
1. the phasmon sensor of a periodic array of holes structure, comprise metal film (1), the upper evenly distributed unit hole array structure being provided with N number of cycle of described metal film (1), it is characterized in that: the unit hole array structure in each cycle for offer a center pit on metal film (1), a pair connecting hole is provided with in the outer symmetrical of center pit, described connecting hole is all connected with center pit by the nano slit (4) etched on metal film (1), and center pit, connecting hole and nano slit (4) one-body molded and run through the upper and lower surface of metal film (1), at center pit, the inner space of connecting hole and nano slit (4) is filled with dielectric layer, the positive integer of wherein said N >=2.
2. the phasmon sensor of periodic array of holes structure according to claim 1, is characterized in that: the thickness of described metal film (1) is 50nm.
3. the phasmon sensor of periodic array of holes structure according to claim 1 and 2, is characterized in that: the width of described nano slit (4) is 25 ~ 55nm.
4. the phasmon sensor of periodic array of holes structure according to claim 3, is characterized in that: the specific inductive capacity of described dielectric layer is 1.0 ~ 2.5.
5. the phasmon sensor of periodic array of holes structure according to claim 3, is characterized in that: the length of the unit hole array structure in each cycle and wide equal.
6. the phasmon sensor of periodic array of holes structure according to claim 3, is characterized in that: described center pit is circular hole (2), and described connecting hole is rectangular opening (3).
7. the phasmon sensor of periodic array of holes structure according to claim 6, is characterized in that: the diameter of described circular hole (2) is 40nm ~ 100nm.
8. the phasmon sensor of periodic array of holes structure according to claim 6, is characterized in that: the length of described rectangular opening (3) is more than or equal to the diameter of circular hole (2).
9. the phasmon sensor of periodic array of holes structure according to claim 8, is characterized in that: the length of described rectangular opening (3) equals the diameter of circular hole (2).
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105738990A (en) * | 2016-04-29 | 2016-07-06 | 桂林电子科技大学 | Plasmon waveguide filter with high transmission characteristic |
| CN105957917A (en) * | 2016-06-17 | 2016-09-21 | 浙江大学 | Surface plasmon-based wavelength selection Si-based photoconductive mid and far-infrared blocked impurity band detector and preparation method thereof |
| CN107478597A (en) * | 2017-08-21 | 2017-12-15 | 桂林电子科技大学 | Metal rectangular slit array structure plasma light fiber sensor based on double transmission peak |
| CN109270031A (en) * | 2018-09-06 | 2019-01-25 | 桂林电子科技大学 | A kind of annulus-rectangle composite Nano hole array surface phasmon fibre optical sensor |
| CN111224223A (en) * | 2020-03-20 | 2020-06-02 | Oppo广东移动通信有限公司 | Sensor and electronic device |
| CN111308588A (en) * | 2020-03-23 | 2020-06-19 | 中北大学 | Multi-band perfect absorber based on surface plasmons |
| CN112630878A (en) * | 2021-01-12 | 2021-04-09 | 西安电子科技大学 | Filter based on nanopore array structure |
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2015
- 2015-10-16 CN CN201520802224.4U patent/CN205049772U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105738990A (en) * | 2016-04-29 | 2016-07-06 | 桂林电子科技大学 | Plasmon waveguide filter with high transmission characteristic |
| CN108345054A (en) * | 2016-04-29 | 2018-07-31 | 陈晓辉 | A kind of filtering method |
| CN105738990B (en) * | 2016-04-29 | 2018-08-31 | 桂林电子科技大学 | A kind of phasmon waveguide filter of strong transmissison characteristic |
| CN105957917A (en) * | 2016-06-17 | 2016-09-21 | 浙江大学 | Surface plasmon-based wavelength selection Si-based photoconductive mid and far-infrared blocked impurity band detector and preparation method thereof |
| CN107478597A (en) * | 2017-08-21 | 2017-12-15 | 桂林电子科技大学 | Metal rectangular slit array structure plasma light fiber sensor based on double transmission peak |
| CN107478597B (en) * | 2017-08-21 | 2020-07-03 | 桂林电子科技大学 | Metal rectangular slit array structure plasma optical fiber sensor based on double transmission peaks |
| CN109270031A (en) * | 2018-09-06 | 2019-01-25 | 桂林电子科技大学 | A kind of annulus-rectangle composite Nano hole array surface phasmon fibre optical sensor |
| CN111224223A (en) * | 2020-03-20 | 2020-06-02 | Oppo广东移动通信有限公司 | Sensor and electronic device |
| CN111224223B (en) * | 2020-03-20 | 2021-05-11 | Oppo广东移动通信有限公司 | Sensor and electronic device |
| CN111308588A (en) * | 2020-03-23 | 2020-06-19 | 中北大学 | Multi-band perfect absorber based on surface plasmons |
| CN112630878A (en) * | 2021-01-12 | 2021-04-09 | 西安电子科技大学 | Filter based on nanopore array structure |
| CN112630878B (en) * | 2021-01-12 | 2022-03-22 | 西安电子科技大学 | Filter based on nanopore array structure |
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