CN111463308A - Silicon carbide coaxial ultraviolet photoelectric detector and preparation method thereof - Google Patents
Silicon carbide coaxial ultraviolet photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
A silicon carbide coaxial ultraviolet photoelectric detector and a preparation method thereof relate to an ultraviolet photoelectric detector. The silicon carbide coaxial ultraviolet photoelectric detector is provided with a silicon carbide n + type substrate with high doping concentration, a homogeneous n-type buffer layer is arranged on the silicon surface of the n + type substrate, a cylindrical silicon carbide n-type layer is arranged upwards in the center of the n-type buffer layer, a cylindrical tubular silicon carbide low-doping i-type absorption layer and a cylindrical tubular silicon carbide p + type ohmic contact layer are sequentially arranged outwards by taking the axis of the n-type layer as the center, the p + type ohmic contact layers are all arranged on the upper part of the side of the i-type absorption layer and are not contacted with the n + type substrate, the whole device forms a p-i-n structure from outside to inside in the horizontal direction, and SiO (silicon dioxide) layers are arranged on the surfaces of the p + type ohmic contact layer, the i-type absorption layer and the n-type2A passivation layer; the back surface of the n + type substrate is provided with an n + type electrode, and the upper surface of the p + type ohmic contact layer side is provided with a p + type electrodeAnd (4) a pole. Better device responsivity can be obtained, and the efficiency of collecting photon-generated carriers is improved.
Description
Technical Field
The invention relates to an ultraviolet photoelectric detector, in particular to a silicon carbide coaxial ultraviolet photoelectric detector capable of obviously improving the absorption and the responsivity of ultraviolet solar blind short-waveband signals and a preparation method thereof.
Background
With the increasingly wide application of ultraviolet rays in the aspects of industrial manufacturing, medical and health disinfection, environmental monitoring and the like, the detection technology of ultraviolet light waveband signals, particularly ultraviolet light solar blind waveband (with the wavelength of 0.20-0.28 mu m) signals is gradually paid attention to, ultraviolet photodetectors of different materials and structures are developed successively, and the ultraviolet photodetectors made of semiconductor materials have the excellent characteristics of low voltage, small volume, long service life and the like, and become research hotspots.
At present, a silicon-based detector is mature in process, but the silicon forbidden band width is small, the short wave ultraviolet signal detection can be influenced by visible light, a filter plate needs to be additionally installed, and the wide forbidden band semiconductor photoelectric detector can accurately detect the ultraviolet signal. Silicon carbide, one of the important materials of the third generation wide bandgap semiconductor, has characteristics of wide bandgap, high breakdown electric field, high carrier saturation, high rate, good thermal conductivity, etc. (Huili Zhu, Xiaping Chen, Jianfa Cai, Zhengyun Wu, 4H-Siresultature amplitude and photo detectors with low breakdown voltage and high [ J ], Solid-State Electronics,2009, Vol.53: 7-10). The silicon carbide ultraviolet photoelectric detector has the excellent properties of visible light blindness, higher quantum efficiency, radiation resistance and the like. Because the absorption coefficient of ultraviolet signals is large, the absorption length (i.e. the propagation distance) is short, a highly doped p + -type ohmic contact layer of a commonly used pn junction and a p-i-n structure ultraviolet photodetector has stronger absorption to ultraviolet incident light and converts the ultraviolet incident light into photogenerated carriers, the p + -type ohmic contact layer has no space depletion layer basically, the photogenerated carriers cannot be separated and collected by an electric field and disappear through the carrier recombination effect, and the responsivity of the device is reduced (XiapingChen, Huili Zhu, Jiafa Cai, zhengyu Wu, High-performance 4H-SiC-basedlraviolet p-i-nphotoetector [ J ], j.appl.phys.,2007,102: 024505).
Disclosure of Invention
The invention aims to provide a silicon carbide coaxial ultraviolet photoelectric detector and a preparation method thereof, which can improve the absorption of an absorption layer of the device on incident light and the conversion of carriers and improve the detection capability of the detector, aiming at the defect that the responsivity and the quantum efficiency are reduced due to the absorption of an ultraviolet incident signal by a p + layer in the conventional silicon carbide ultraviolet photoelectric detector with a vertical sandwich p-i-n structure.
The silicon carbide coaxial ultraviolet photoelectric detector is provided with a silicon carbide n + type substrate with high doping concentration, a homogeneous silicon carbide n-type buffer layer is arranged on the silicon surface of the silicon carbide n + type substrate, a cylindrical silicon carbide n-type layer is arranged upwards in the center of the silicon carbide n-type buffer layer, a cylindrical tubular silicon carbide low-doping i-type absorption layer and a cylindrical tubular silicon carbide p + type ohmic contact layer are sequentially arranged from the axis of the cylindrical silicon carbide n-type layer to the outside, the silicon carbide p + type ohmic contact layers are all arranged on the upper part of the cylindrical tubular silicon carbide low-doping i-type absorption layer side and are not in contact with the silicon carbide n + type substrate, a p-i-n structure is formed in the horizontal direction of the whole device from the outside to the inside, and SiO (silicon dioxide) is arranged on the surfaces of the silicon carbide p + type ohmic contact layer, the cylindrical tubular silicon carbide low-doping i-type absorption layer and the cylindrical silicon carbide n-2A passivation layer; an ohmic contact n + type electrode is arranged on the back surface of the silicon carbide n + type substrate, and an ohmic contact p + type electrode is arranged on the upper surface of the p + type ohmic contact layer side.
The height of the cylindrical silicon carbide n-type layer can be 2-4 mu m, the radius of the bottom surface can be 2-5 mu m, and the doping concentration can be 1 × 1018/cm3～5×1018/cm3(ii) a The total height of the cylindrical tubular silicon carbide low-doped i-type absorption layer is consistent with that of the cylindrical silicon carbide n-type layer; the cylindrical tubular silicon carbide low-doped i-type absorption layer is composed of an upper cylindrical tubular body and a lower cylindrical tubular body which are different in radius, the inner circle radius of the upper cylindrical tubular body can be 2-5 mu m, the outer circle radius can be 10-50 mu m, the height can be 1-2 mu m, the inner circle radius of the lower cylindrical tubular body can be 2-5 mu m, and the outer circle radius can be 2-5 mu m12-55 μm, 1-2 μm in height, and 10% in the same doping concentration of the upper and lower cylindrical tubular bodies13/cm3～1014/cm3The order of magnitude, the total thickness of the cylindrical tubular silicon carbide low-doped i-type absorption layer is consistent with the thickness of the cylindrical silicon carbide n-type layer;
the cylindrical tubular silicon carbide p + type ohmic contact layer is arranged on the upper part of the outer side of the silicon carbide low-doped i-type absorption layer, the thickness of the cylindrical tubular silicon carbide p + type ohmic contact layer is consistent with that of a cylindrical tubular body on the silicon carbide low-doped i-type absorption layer, the thickness of the cylindrical tubular silicon carbide p + type ohmic contact layer can be 1-2 micrometers, the height of the cylindrical tubular silicon carbide p + type ohmic contact layer can be 1-2 micrometers, the inner circle radius can be 10-50 micrometers, the outer circle radius can be 12-55 micrometers, and the doping concentration19/cm3An order of magnitude.
The thickness of the cylindrical tubular silicon carbide p + type ohmic contact layer is smaller than the total thickness of the silicon carbide low-doped i type absorption layer.
The preparation method of the silicon carbide coaxial ultraviolet photoelectric detector comprises the following steps:
1) carrying out RCA standard cleaning on the silicon carbide n + type substrate;
2) growing a silicon carbide n-type buffer layer and a non-intentionally doped absorption layer on the Si surface of the silicon carbide n + type substrate subjected to RCA standard cleaning treatment in a homoepitaxial manner;
3) etching the sample to form a cylindrical non-intentionally doped absorption layer;
4) preparing a cylindrical n-type layer in the center of the cylindrical non-intentionally doped absorption layer by ion implantation and annealing, and forming a cylindrical tubular silicon carbide low-doped i-type absorption layer;
5) preparing a cylindrical tubular silicon carbide p + type ohmic contact layer which is coaxial with the cylindrical silicon carbide n-type layer through ion implantation and annealing;
6) preparation of SiO2A passivation layer;
7) and preparing a p + type electrode and an n + type electrode.
In step 2), the doping concentration of the silicon carbide n-type buffer layer can be 1 × 1018/cm3～5×1018/cm3The thickness can be 100 to 300 nm.
In the step 3), the etching can adopt a coupled plasma etching method, and the cylindrical shape is not doped intentionallyThe dopant concentration of the heteroabsorber layer may be of the order of 1013/cm3～1014/cm3。
In the step 4), the outer radius of the cylindrical tubular silicon carbide low-doped i-type absorption layer can be 12-55 μm, and the doping concentration order of magnitude can be 1013/cm3～1014/cm3The thickness of the film is 2 to 4 μm.
In the step 5), the height of the cylindrical tubular silicon carbide p + type ohmic contact layer is 1-2 microns, the inner circle radius of the bottom surface is 10-50 microns, the outer circle radius of the bottom surface is 12-55 microns, and the doping concentration order of magnitude is 1019/cm3。
In step 6), the preparation of SiO2The specific method of the passivation layer can be as follows: cleaning a sample by adopting RCA standard, removing impurities on the surface of the sample, alternately oxidizing by adopting dry oxygen, wet oxygen and dry oxygen, and growing and fully paving an oxide layer on the front surface (in the direction of the upper surface of the i-type absorption layer) of the sample to serve as a sacrificial layer; putting the sample with the grown sacrificial layer into buffered hydrofluoric acid for corrosion, and removing the sacrificial layer; dry oxygen, wet oxygen, dry oxygen and nitrogen are alternately oxidized to grow a thermal oxidation silicon dioxide layer with the thickness of about 60nm, a silicon dioxide layer with the thickness of tens to hundreds of nanometers is grown by a chemical vapor deposition method, and the two silicon dioxide layers form SiO (silicon oxide) of the device2And a passivation layer.
In step 7), the specific method for preparing the p + type electrode and the n + type electrode may be: exposing and developing the photoresist by photolithography, and etching p with buffered hydrofluoric acid+Forming an oxide layer on the upper part of the type ohmic contact layer to form a ring-shaped electrode window, preparing a layer of alloy by adopting a magnetron sputtering process to form a p + type electrode, preparing a layer of photoresist on the front surface of a sample for protection and isolation, corroding the oxide layer on the bottom surface of the substrate by using buffer hydrofluoric acid, preparing an alloy layer by adopting magnetron sputtering to form an n + type electrode, annealing the n + type electrode and the p + type electrode to ensure that the p + type electrode and the n + type electrode of the sample are respectively connected with the p + type electrode and the p + type electrode+The type ohmic contact layer and the n + type substrate form a good ohmic contact.
Compared with the prior art, the invention has the following outstanding advantages:
according to the silicon carbide coaxial p-i-n structure ultraviolet photoelectric detector, the whole device forms a p-i-n structure from outside to inside in the horizontal direction, an ultraviolet signal is firstly incident to the i-type absorption layer, the influence of a p + type ohmic contact layer on the absorption of the ultraviolet incident light in the existing p-i-n device is solved, the strong absorption of other layers or electrodes on the ultraviolet light is avoided, the ultraviolet incident light is ensured to directly reach the i-type absorption layer, a detection signal is formed, and therefore better device responsivity is obtained. Therefore, compared with the silicon carbide ultraviolet photoelectric detector with the conventional vertical p-i-n sandwich structure, the silicon carbide coaxial p-i-n structure ultraviolet photoelectric detector has more photogenerated carriers in the i-type absorption layer, and has higher quantum efficiency and responsivity. The width of the i layer can be larger on the premise of low requirement on the photoresponse speed, and the efficiency of collecting photon-generated carriers is further improved. The method has important significance and wide application prospect for devices with high sensitivity required by weak ultraviolet detection.
Drawings
Fig. 1 is a schematic top view of a silicon carbide coaxial ultraviolet photodetector according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of a silicon carbide coaxial ultraviolet photodetector according to an embodiment of the present invention.
Fig. 3 is an absolute spectral response curve of the silicon carbide coaxial uv photodetector and a conventional vertical sandwich p-i-n uv photodetector according to an embodiment of the present invention.
In fig. 1 and 2, each is labeled: n + type electrode 1, silicon carbide n + type substrate 2, silicon carbide n type buffer layer 3, cylindrical tubular silicon carbide low-doped i type absorption layer 4, cylindrical tubular silicon carbide p + type ohmic contact layer 5, p + type electrode 6, SiO2Passivation layer 7, cylindrical silicon carbide n-type layer 8.
Detailed Description
The following examples will further illustrate the present invention with reference to the accompanying drawings.
In order to make the structure designed by the present invention more clear and understandable, referring to the schematic structural diagrams of fig. 1 and 2, the top view structure of the silicon carbide coaxial p-i-n structure ultraviolet photodetector of the present invention is shown in fig. 1, and the cross-sectional structure is shown in fig. 2.
The silicon carbide coaxial ultraviolet photoelectric detector is provided with a silicon carbide n + type substrate 2 with high doping concentration, a silicon surface of the silicon carbide n + type substrate 2 is provided with a homogeneous silicon carbide n type buffer layer 3, a cylindrical silicon carbide n type layer 8 is arranged upwards at the center of the silicon carbide n type buffer layer 3, a cylindrical tubular silicon carbide low-doped i-type absorption layer 4 and a cylindrical tubular silicon carbide p + -type ohmic contact layer 5 are sequentially arranged from the axis of a cylindrical silicon carbide n-type layer 8 as the center to the outside, the silicon carbide p + -type ohmic contact layers 5 are all arranged on the upper part of the side of the cylindrical tubular silicon carbide low-doped i-type absorption layer 4 and are not contacted with a silicon carbide n + -type substrate 2, the whole device forms a p-i-n structure from the outside to the inside in the horizontal direction, SiO is arranged on the surfaces of the silicon carbide p + type ohmic contact layer 5, the cylindrical tubular silicon carbide low-doped i type absorption layer 4 and the cylindrical silicon carbide n type layer 8.2A passivation layer 7; an ohmic contact n + type electrode 1 is provided on the back surface of the silicon carbide n + type substrate 2, and an ohmic contact p + type electrode 6 is provided on the upper surface of the p + type ohmic contact layer 5.
The height of the cylindrical silicon carbide n-type layer 8 can be 2-4 mu m, the radius of the bottom surface can be 2-5 mu m, and the doping concentration can be 1 × 1018/cm3～5×1018/cm3(ii) a The total height of the cylindrical tubular silicon carbide low-doped i-type absorption layer 4 is consistent with that of the cylindrical silicon carbide n-type layer 8; the cylindrical tubular silicon carbide low-doped i-type absorption layer 4 is composed of an upper cylindrical tubular body and a lower cylindrical tubular body which have different radiuses, the inner circle radius of the upper cylindrical tubular body can be 2-5 mu m, the outer circle radius can be 10-50 mu m, the height can be 1-2 mu m, the inner circle radius of the lower cylindrical tubular body can be 2-5 mu m, the outer circle radius can be 12-55 mu m, the height can be 1-2 mu m, the doping concentrations of the upper cylindrical tubular body and the lower cylindrical tubular body are the same and can be 1013/cm3～1014/cm3The order of magnitude, the total thickness of the cylindrical tubular silicon carbide low-doped i-type absorption layer 4 is consistent with the thickness of the cylindrical silicon carbide n-type layer 8;
the cylindrical tubular silicon carbide p + type ohmic contact layer 5 is arranged on the upper part of the outer side of the silicon carbide low-doped i type absorption layer 4, the thickness of the cylindrical tubular silicon carbide p + type ohmic contact layer is consistent with that of the cylindrical tubular body on the silicon carbide low-doped i type absorption layer 4, the thickness of the cylindrical tubular silicon carbide p + type ohmic contact layer can be 1-2 mu m, and the height of the cylindrical tubular silicon carbide p + type ohmic contact layer can be1-2 μm, 10-50 μm inner circle radius, 12-55 μm outer circle radius, and 10 doping concentration19/cm3An order of magnitude.
The thickness of the cylindrical tubular silicon carbide p + type ohmic contact layer 5 is smaller than the total thickness of the silicon carbide low-doped i type absorption layer 4.
The preparation method of the silicon carbide coaxial ultraviolet photoelectric detector comprises the following steps:
1) RCA standard cleaning is carried out on the silicon carbide n + type substrate 2;
2) growing a silicon carbide n-type buffer layer 3 and a non-intentionally doped absorption layer in a silicon carbide n + type substrate 2 Si surface homoepitaxial mode after RCA standard cleaning treatment, wherein the doping concentration of the silicon carbide n-type buffer layer 3 can be 1 × 1018/cm3～5×1018/cm3The thickness can be 100 to 300 nm.
3) Etching the sample to form a cylindrical non-intentionally doped absorption layer; the etching can adopt a coupled plasma etching method, and the doping concentration order of the cylindrical non-intentionally doped absorption layer can be 1013/cm3～1014/cm3。
4) Preparing a cylindrical n-type layer in the center of the cylindrical non-intentionally doped absorption layer by ion implantation and annealing, and forming a cylindrical tubular silicon carbide low-doped i-type absorption layer 4; the outer radius of the cylindrical tubular silicon carbide low-doped i-type absorption layer 4 can be 12-55 mu m, and the doping concentration order of magnitude can be 1013/cm3～1014/cm3The thickness of the film is 2 to 4 μm.
5) Preparing a cylindrical tubular silicon carbide p + type ohmic contact layer 5 which is coaxial with the cylindrical silicon carbide n-type layer 8 through ion implantation and annealing; the height of the cylindrical tubular silicon carbide p + type ohmic contact layer 5 is 1-2 mu m, the radius of the inner circle of the bottom surface is 10-50 mu m, the radius of the outer circle of the bottom surface is 12-55 mu m, and the doping concentration order of magnitude is 1019/cm3。
6) Preparation of SiO2Passivation layer 7: cleaning sample with RCA standard to remove impurities on sample surface, alternately oxidizing with dry oxygen, wet oxygen and dry oxygen, and spreading a layer of oxide on sample front surface (i-type absorption layer upper surface direction)The layer is used as a sacrificial layer; putting the sample with the grown sacrificial layer into buffered hydrofluoric acid for corrosion, and removing the sacrificial layer; dry oxygen, wet oxygen, dry oxygen and nitrogen are alternately oxidized to grow a thermal oxidation silicon dioxide layer with the thickness of about 60nm, a silicon dioxide layer with the thickness of tens to hundreds of nanometers is grown by a chemical vapor deposition method, and the two silicon dioxide layers form SiO (silicon oxide) of the device2A passivation layer 7.
7) Preparing a p + type electrode 6 and an n + type electrode 1, exposing and developing the photoresist by adopting a photoetching process, and corroding the p + type electrode by using buffer hydrofluoric acid+Forming an oxide layer on the upper part of the type ohmic contact layer to form a ring-shaped electrode window, preparing a layer of alloy by adopting a magnetron sputtering process to form a p + type electrode 6, preparing a layer of photoresist on the front surface of a sample for protection and isolation, corroding the oxide layer on the bottom surface of the substrate by using buffer hydrofluoric acid, preparing an alloy layer by adopting magnetron sputtering to form an n + type electrode 1, annealing the n + type electrode 1 and the p + type electrode 6 to ensure that the p + type electrode and the n + type electrode of the sample are respectively connected with the p + type electrode and the p + type electrode+The type ohmic contact layer and the n + type substrate form a good ohmic contact.
Specific examples are given below.
The preparation method of the silicon carbide coaxial ultraviolet photoelectric detector comprises the following steps:
1) RCA standard cleaning is carried out on the silicon carbide high-doped n + type substrate 2 sample, and the steps are as follows:
a. ultrasonic cleaning with toluene, acetone and ethanol sequentially for at least two times, and washing with de-heating and cold ionized water.
b. Boiling the third liquid at 250 ℃ for 20min, and washing the third liquid by hot and cold deionized water, wherein the third liquid is prepared from the following components in percentage by volume
H2SO4∶H2O2＝4∶1。
c. The sample is soaked in diluted hydrofluoric acid (hydrogen fluoride and deionized water in the volume ratio of 1 to 10) for 3min or more, and then washed with hot and cold deionized water.
d. Boiling the sample in a first liquid (NH) at a volume ratio for 10min or more, and washing with hot and cold deionized water3·H2O∶H2O2∶H2O＝1∶1∶4。
e. Boiling the sample in second liquid for 10min or more, and washing with hot and cold deionized water, wherein the first liquid is HCl: H according to volume ratio2O2∶H2O＝1∶1∶4。
f. Soaking the sample in diluted hydrofluoric acid (hydrogen fluoride and deionized water in the volume ratio of 1 to 10) for 3min or more, flushing with hot and cold deionized water, and blowing the substrate with nitrogen for later use.
2) The (0001) Si face of the silicon carbide n + type substrate 2 after the RCA standard cleaning treatment is subjected to homoepitaxial growth with the doping concentration of 1 × 1018/cm3～5×1018/cm3A silicon carbide n-type buffer layer 3 with a thickness of 100-300 nm and a doping concentration of 1013/cm3～1014/cm3And the silicon carbide layer with the thickness of 2-4 um is not doped with the absorption layer intentionally.
3) And etching the non-intentionally doped absorption layer into a cylindrical non-intentionally doped absorption layer with the radius of 12-55 mu m by adopting a coupled plasma etching method.
4) Adopting photoetching, oxidation, sputtering, high-temperature ion implantation and high-temperature activation processes to form a cylindrical silicon carbide n-type layer 8 with the same thickness (2-4 mu m) and the bottom surface circle radius of 2-5 mu m at the center of the cylindrical non-intentionally-doped absorption layer, wherein the doping concentration can be 1 × 1018/cm3～5×1018/cm3. The cylindrical non-intentionally doped absorber layer is changed to a cylindrical tubular silicon carbide low doped i-type absorber layer 4.
5) Adopting photoetching, oxidation, sputtering, high-temperature ion implantation and high-temperature activation processes to form a cylindrical tubular silicon carbide p + type ohmic contact layer 5 which is coaxial with the n-type layer, has the height of 1-2 mu m, the inner circle radius of the bottom surface of 10-50 mu m and the outer circle radius of the bottom surface of 12-55 mu m, and has the doping concentration of 10 orders of magnitude19/cm3。
6) Cleaning a sample by adopting RCA standard, removing impurities on the surface of the sample, alternately oxidizing by adopting dry oxygen, wet oxygen and dry oxygen, and growing and fully paving an oxide layer on the front surface (in the direction of the upper surface of the i-type absorption layer) of the sample to serve as a sacrificial layer; putting the sample with the grown sacrificial layer into buffered hydrofluoric acid for corrosion, and removing the sacrificial layer; dry oxygen, wet oxygen, dry oxygen and nitrogen are alternately oxidized to grow a thermal oxidation silicon dioxide layer with the thickness of about 60nm, a silicon dioxide layer with the thickness of tens of nanometers to hundreds of nanometers is grown by a chemical vapor deposition method, and the two silicon dioxide layers form a passivation layer 7 of the device.
7) Exposing and developing the photoresist by photolithography, and etching p with buffered hydrofluoric acid+Forming an oxide layer on the upper part of the ohmic contact layer to form a ring-shaped electrode window, preparing a layer of alloy by adopting a magnetron sputtering process to form a p + type electrode 6, preparing a layer of photoresist on the front surface of a sample for protection and isolation, corroding the oxide layer on the bottom surface of the substrate by using buffer hydrofluoric acid, preparing an alloy layer by adopting magnetron sputtering to form an n + type electrode 1, annealing the electrodes 1 and 6 to ensure that the p + type electrode and the n + type electrode of the sample are respectively connected with the p + type electrode and the n + type electrode+The type ohmic contact layer and the n + type substrate form a good ohmic contact.
The ultraviolet photoelectric detector prepared by the invention is of a silicon carbide coaxial p-i-n structure, the simulation absolute spectral response curve of the ultraviolet photoelectric detector with the conventional vertical sandwich p-i-n structure is shown in fig. 3, as can be seen from fig. 3, the i absorption layers of the ultraviolet photoelectric detectors with the two structures are both 2 microns, and the simulation result shows that the responsivity of the silicon carbide coaxial ultraviolet photoelectric detector is obviously improved compared with that of the ultraviolet photoelectric detector with the conventional vertical sandwich p-i-n structure, and particularly, the responsivity is improved by 630.3-0.6 times in an ultraviolet solar blind short waveband (200-280 nm).
The method comprises the steps of sequentially growing a silicon carbide n-type buffer layer and a silicon carbide non-intentionally-doped absorption layer on the silicon surface of a silicon carbide n + type substrate in a homoepitaxial manner, etching the non-intentionally-doped absorption layer into a cylindrical non-intentionally-doped absorption layer by adopting a coupled plasma etching method, forming a cylindrical silicon carbide n-type layer and a cylindrical tubular p + type ohmic contact layer which is coaxial with the n-type layer at the center of the cylindrical non-intentionally-doped absorption layer by adopting high-temperature ion implantation and high-temperature oxidation activation processes, and forming a coaxial cylindrical tubular silicon carbide i-type absorption layer. And preparing a silicon dioxide passivation layer on the surfaces of the p + type ohmic contact layer, the i-type absorption layer and the n-type layer of the device simultaneously through an optimized thermal oxidation and chemical vapor deposition process. And respectively preparing p + type and n + type electrodes on the surface of the p + type ohmic contact layer and the bottom surface of the n + type substrate by adopting photoetching, magnetron sputtering and annealing processes. The silicon carbide coaxial ultraviolet photoelectric detector effectively avoids the influence of a p + layer on the absorption of ultraviolet incident light existing in the conventional p-i-n device at present, improves the absorption of an i-type absorption layer on optical signals and the conversion of carriers, and can obtain higher light responsivity.
Claims (10)
1. A silicon carbide coaxial ultraviolet photoelectric detector is characterized in that a silicon carbide n + type substrate with high doping concentration is arranged, a homogeneous silicon carbide n-type buffer layer is arranged on the silicon surface of the silicon carbide n + type substrate, a cylindrical silicon carbide n-type layer is arranged upwards in the center of the silicon carbide n-type buffer layer, a cylindrical tubular silicon carbide low-doped i-type absorption layer and a cylindrical tubular silicon carbide p + type ohmic contact layer are sequentially arranged from the axis of the cylindrical silicon carbide n-type layer as the center to the outside, the silicon carbide p + type ohmic contact layer is completely arranged on the upper part of the side of the cylindrical tubular silicon carbide low-doped i-type absorption layer and is not contacted with the silicon carbide n + type substrate, the whole device forms a p-i-n structure from the outside to the inside in the horizontal direction, SiO is arranged on the surfaces of the silicon carbide p + type ohmic contact layer, the cylindrical tubular silicon carbide low-doped i type absorption layer and the cylindrical silicon carbide n type layer.2A passivation layer; an ohmic contact n + type electrode is arranged on the back surface of the silicon carbide n + type substrate, and an ohmic contact p + type electrode is arranged on the upper surface of the p + type ohmic contact layer side.
2. The silicon carbide coaxial ultraviolet photodetector as claimed in claim 1, wherein the height of the cylindrical silicon carbide n-type layer is 2 to 4 μm, the radius of the bottom surface is 2 to 5 μm, and the doping concentration is 1 × 1018/cm3～5×1018/cm3。
3. The silicon carbide coaxial ultraviolet photodetector as claimed in claim 1, wherein the cylindrical tubular silicon carbide low-doped i-type absorption layer is composed of an upper cylindrical tubular body and a lower cylindrical tubular body with different radiuses, the radius of the inner circle of the upper cylindrical tubular body is 2-5 μm, and the radius of the outer circle of the upper cylindrical tubular body is halfThe diameter is 10-50 mu m, the height is 1-2 mu m, the inner circle radius of the lower cylindrical tubular body is 2-5 mu m, the outer circle radius is 12-55 mu m, the height is 1-2 mu m, the doping concentration of the upper cylindrical tubular body and the lower cylindrical tubular body are the same and are both 1013/cm3～1014/cm3And the total height of the cylindrical tubular silicon carbide low-doped i-type absorption layer is consistent with that of the cylindrical silicon carbide n-type layer.
4. The silicon carbide coaxial ultraviolet photodetector as claimed in claim 1, wherein the cylindrical tubular silicon carbide p + type ohmic contact layer is provided at an upper portion of an outer side of the silicon carbide low-doped i type absorption layer, has a height corresponding to a height of the cylindrical tubular body on the silicon carbide low-doped i type absorption layer, and has a height of 1 to 2 μm, an inner circle radius of 10 to 50 μm, an outer circle radius of 12 to 55 μm, and a doping concentration of 1019/cm3An order of magnitude.
5. The silicon carbide coaxial ultraviolet photodetector of claim 1, wherein the cylindrical tubular silicon carbide p + type ohmic contact layer has a height less than the total height of the silicon carbide low i-doped absorber layer.
6. The method for preparing a silicon carbide coaxial ultraviolet photodetector as claimed in claim 1, characterized by comprising the steps of:
1) carrying out RCA standard cleaning on the silicon carbide n + type substrate;
2) growing a silicon carbide n-type buffer layer and a non-intentionally doped absorption layer on the Si surface of the silicon carbide n + type substrate subjected to RCA standard cleaning treatment in a homoepitaxial manner;
3) etching the sample to form a cylindrical non-intentionally doped absorption layer;
4) preparing a cylindrical n-type layer in the center of the cylindrical non-intentionally doped absorption layer by ion implantation and annealing, and forming a cylindrical tubular silicon carbide low-doped i-type absorption layer;
5) preparing a cylindrical tubular silicon carbide p + type ohmic contact layer which is coaxial with the cylindrical silicon carbide n-type layer through ion implantation and annealing;
6) preparation of SiO2A passivation layer;
7) and preparing a p + type electrode and an n + type electrode.
7. The method according to claim 6, wherein in step 2), the n-type buffer layer has a doping concentration of 1 × 1018/cm3～5×1018/cm3The thickness is 100 to 300 nm.
8. The method for preparing a silicon carbide coaxial ultraviolet photodetector as claimed in claim 6, wherein in the step 3), the etching adopts a coupled plasma etching method.
9. The method for preparing the silicon carbide coaxial ultraviolet photodetector as claimed in claim 6, wherein in step 6), the SiO is prepared2The specific method of the passivation layer comprises the following steps: cleaning a sample by adopting RCA standard, removing impurities on the surface of the sample, alternately oxidizing by adopting dry oxygen, wet oxygen and dry oxygen, and growing and paving an oxide layer on the front surface of the sample to serve as a sacrificial layer; putting the sample with the grown sacrificial layer into buffered hydrofluoric acid for corrosion, and removing the sacrificial layer; dry oxygen, wet oxygen, dry oxygen and nitrogen are alternately oxidized to grow a thermal oxidation silicon dioxide layer with the thickness of about 60nm, a silicon dioxide layer with the thickness of tens to hundreds of nanometers is grown by a chemical vapor deposition method, and the two silicon dioxide layers form SiO (silicon oxide) of the device2And a passivation layer.
10. The method according to claim 6, wherein in step 7), the p + type electrode and the n + type electrode are prepared by exposing and developing a photoresist by photolithography, and p is etched by buffered hydrofluoric acid+Forming an oxide layer on the upper part of the ohmic contact layer to form an annular electrode window, preparing a layer of alloy by adopting a magnetron sputtering process to form a p + type electrode, preparing a layer of photoresist on the front surface of a sample for protection and isolation, corroding the oxide layer on the bottom surface of the substrate by using buffer hydrofluoric acid, and preparing an alloy layer by adopting magnetron sputteringForming n + type electrode, annealing the n + type electrode and the p + type electrode to make the p + type electrode and the n + type electrode of the sample and the p + type electrode respectively+The type ohmic contact layer and the n + type substrate form a good ohmic contact.
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