CN109473488B - Visible blind ultraviolet detector and preparation method thereof - Google Patents
Visible blind ultraviolet detector and preparation method thereof Download PDFInfo
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- CN109473488B CN109473488B CN201710798855.7A CN201710798855A CN109473488B CN 109473488 B CN109473488 B CN 109473488B CN 201710798855 A CN201710798855 A CN 201710798855A CN 109473488 B CN109473488 B CN 109473488B
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000006096 absorbing agent Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a visible blind ultraviolet detector and a preparation method thereof, wherein the visible blind ultraviolet detector comprises the following steps: an absorber, wherein the energy gap of the absorber material is 3 eV-8 eV; a first electrode and a second electrode disposed on a surface of the absorber; and a third electrode disposed between the first electrode and the second electrode, the third electrode being proximate to the first electrode. The visible blind ultraviolet detector greatly improves the sensitivity of the detector.
Description
Technical Field
The invention relates to the field of optical detectors, in particular to a visible blind ultraviolet light detector and a preparation method thereof.
Background
The visible blind ultraviolet detector is not interfered by visible light and infrared light, can detect an ultraviolet light signal under the environment conditions of the visible light and the infrared light, has unique advantages, and has very wide and important application in the fields of scientific research, space detection, military and the like.
In order to eliminate the effect of schottky between the absorber and the electrode to further improve the sensitivity, the prior art provides a visible blind ultraviolet detector, as shown in fig. 1, electrodes 12 and 13 are respectively arranged at both ends of an absorber 11 (a strontium titanate single crystal with a thickness of 0.5mm, a width of 5mm and a length of 10 mm) made of a wide bandgap material, and electrodes 14 and 15 are arranged between the electrodes 12 and 13, wherein the electrode 14 is close to the electrode 12, and the electrode 15 is close to the electrode 13. The electrode 12 is connected to the electrode 13 via a resistor 16 having a resistance of 2M omega and a power supply 17 having a voltage of 9 volts in that order.
Fig. 2 shows an equivalent circuit diagram of the visible blind uv detector shown in fig. 1, with schottky diode 113 formed between electrode 13 and absorber 11 and schottky diode 112 formed between electrode 12 and absorber 11, as shown in fig. 2. In the circuit shown in fig. 2, the schottky diode 112 is in reverse operation. Only ultraviolet light (for example, pulsed laser light having a wavelength of 308nm and an energy of 20 mJ) having photon energy larger than the forbidden band width of the absorber 11 is incident on the surface of the absorber 11 to generate a photoelectric effect, thereby generating electron-hole pairs in the absorber 11, so that the absorber 11 has a conductive property. The voltage peak value at two ends of the resistor 16 is measured to be 0.4 volt by using an oscilloscope, however, the voltage peak value between the output leads 18 and 19 led out from the electrodes 14 and 15 is measured to be 0.6 volt, and the voltage value obtained between the output leads 18 and 19 eliminates the influence of the Schottky diodes 112 and 113 between the electrodes 12 and 13 and the absorber 11 on the measurement, and improves the detection sensitivity.
Nevertheless, the above-mentioned visible blind uv detectors suffer from the following problems: the output leads 18 and 19 and the power supply 17 do not have the same ground potential, so that the acquisition of voltage signals is inconvenient; when the number of photons of the ultraviolet light received by the absorber 11 is larger, the voltage value between the output leads 18 and 19 is smaller, and the sensitivity thereof is difficult to satisfy the requirements of practical applications.
Disclosure of Invention
To solve the above technical problems in the prior art, an embodiment of the present invention provides a visible blind ultraviolet light detector, which includes:
an absorber having a forbidden band width of 3eV to 8 eV;
a first electrode and a second electrode disposed on a surface of the absorber;
a third electrode disposed between the first and second electrodes, the third electrode being proximate to the first electrode.
Preferably, the three-electrode visible blind ultraviolet light detector further comprises a power supply, and the anode and the cathode of the power supply are electrically connected to the first electrode and the second electrode respectively.
Preferably, the three-electrode visible-blind uv detector further comprises two output leads connected to the third electrode and to the negative electrode of the power supply.
Preferably, the three-electrode visible blind ultraviolet light detector further comprises a protective resistor connected between the negative electrode of the power supply and the second electrode.
Preferably, the material of the absorber is one of strontium titanate, barium titanate, lithium niobate, lanthanum niobate, sapphire, lithium tantalate, lanthanum titanate, zirconium oxide, zinc oxide, and magnesium oxide.
Preferably, the absorber is a strontium titanate single crystal.
Preferably, the strontium titanate single crystal is in a sheet shape and has a (001) crystal plane.
Preferably, the first electrode, the second electrode, and the third electrode are provided on the (001) crystal plane of the strontium titanate single crystal.
Preferably, the first, second and third electrodes are strip-shaped and parallel to each other, and the distance between the third electrode and the first electrode is 2 to 1000 micrometers.
Preferably, the material of the first electrode, the second electrode and the third electrode is gold, platinum, copper, aluminum, graphite, indium tin oxide, strontium ruthenate or metal alloy.
The embodiment of the invention also provides a preparation method of the visible blind ultraviolet detector, which comprises the following steps:
step 1), preparing an absorber with the forbidden band width of 3 eV-8 eV;
and 2) growing a conductive material on the surface of the absorber to form a first electrode, a second electrode and a third electrode, wherein the third electrode is positioned between the first electrode and the second electrode and is close to the first electrode.
Preferably, after the step 2), the method further comprises the following steps:
step 3), connecting the positive electrode and the negative electrode of a power supply to the first electrode and the second electrode respectively;
and 4) respectively leading out output leads from the third electrode and the negative electrode of the power supply.
The visible blind ultraviolet detector can almost completely collect voltage signals generated by incident light, eliminates the influence of a Schottky diode between an electrode and an absorber, and greatly improves the sensitivity of the detector. And the detection signal is output to the ground, so that the acquisition of the voltage signal is facilitated. The response speed can reach nanosecond and picosecond magnitude, and the method has very important application in the fields of scientific research, military and the like.
Drawings
Embodiments of the invention are further described below with reference to the accompanying drawings, in which:
fig. 1 is a schematic diagram of a prior art visible blind uv detector.
Fig. 2 is an equivalent circuit diagram of the visible blind uv detector shown in fig. 1.
Fig. 3 is a schematic structural diagram of a visible blind ultraviolet light detector according to a first embodiment of the present invention.
Fig. 4 is an equivalent circuit diagram of the visible blind uv detector shown in fig. 3.
Fig. 5 is a schematic diagram of a visible blind uv detector according to a second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail by embodiments with reference to the accompanying drawings.
Fig. 3 is a schematic structural diagram of a visible blind ultraviolet light detector according to a first embodiment of the present invention. As shown in fig. 3, the visible blind uv detector 20 comprises: from (001) -oriented strontium titanate (SrTiO)3) An absorber 21 formed of a single crystal material and having a thickness of 0.5mm, a width of 5mm and a length of 10mm, and a polished surface 211 thereof serving as a detection light incident surface; electrodes 22, 23 arranged at opposite ends on the polished surface 211 of the absorber 21, and an electrode 25 located between the electrodes 22, 23, the electrode 25 being parallel to the electrode 23 and spaced apart by 1 mm, wherein the electrodes 22, 23, 25 are strip-shaped electrodes made of silver material and having a width of 1 mm and being parallel to each other. The electrode 22 is connected to the electrode 23 by a power supply 27 of 9 volts, the negative pole of the power supply 27 and the electrode 25 being connected to output leads 28, 29, respectively.
Fig. 4 is an equivalent circuit diagram of the visible blind uv detector shown in fig. 3. As shown in fig. 4, a schottky diode 213 is formed between the electrode 23 and the absorber 21, and a schottky diode 212 is formed between the electrode 22 and the absorber 21.
Also, a pulse laser of 308nm and 20mJ energy is incident on the polished surface 211, so that the absorber 21 generates electron-hole pairs, and the positive electrode of the power supply 27, the positive electrode and the negative electrode of the schottky diode 213, the absorber 21, the negative electrode and the positive electrode of the schottky diode 212, and the negative electrode of the power supply 27 form a conductive loop. The voltage peak between the output leads 28 and 29 is measured by an oscilloscope to be 6 volts, the peak value is much higher than the voltage peak value of 0.6 volts between the output leads 18 and 19 of the detector in fig. 1, and since the voltage value between the output leads 28 and 29 comprises the voltage signals on the absorber 21 and the Schottky diode 212, almost all photoelectric signals are obtained, and the detection sensitivity is improved. Therefore, in the case of measuring the same ultraviolet light, the voltage signal measured by the blind visible ultraviolet light detector 20 of the present invention is 10 times that measured by the existing blind visible ultraviolet light detector. It can be seen that the sensitivity of the visible-blind uv detector 20 of the present invention is improved by an order of magnitude. Has wide and important application in scientific research, space exploration, military and other fields.
In addition, the output lead 28 is connected to the negative pole of the power supply 27 and therefore has the same ground potential, which facilitates the measurement of the voltage value.
As can be seen from the above measurement principle, the larger the number of photons of the ultraviolet light received by the absorber 21, the larger the voltage value between the output leads 28 and 29, and therefore the intensity of the detected ultraviolet light can be reflected intuitively.
Since the present invention obtains the voltage value between the output leads 28, 29, the electrode 25 is made as close as possible to the electrode 23, thereby maximizing the sensitivity. According to other embodiments of the present invention, the spacing between the electrodes 25 and 23 of the present invention is preferably between 2 microns and 1000 microns.
The above-mentioned visible blind uv detector 20 is prepared as follows: SrTiO with the thickness of 0.5mm, the width of 5mm and the length of 10mm is prepared3Single crystalAnd the (001) crystal face thereof is subjected to polishing treatment to form a polished surface 211; evaporating a strip-shaped or strip-shaped silver film with the width of 1 mm at one end of the polishing surface 211 to form an electrode 22, and evaporating two strip-shaped silver films with the width of 1 mm and the interval of 1 mm at the other opposite end of the polishing surface 211 to form electrodes 23 and 25; selecting a power supply, and connecting the anode of the power supply to the electrode 23 and the cathode of the power supply to the electrode 22; output leads 29, 28 are respectively led out from the electrodes 25 and the negative electrode of the power supply 27.
Fig. 5 is a schematic diagram of a visible blind uv detector according to a second embodiment of the present invention. Which is substantially the same as fig. 3 except that the blind uv detector 30 further comprises a protective resistor 36 of 2M omega connected between the electrode 32 and the negative pole of the power supply 37. The protective resistor 36 can effectively prevent burnout of the power source 37 due to an accidental short circuit of the absorber 31. In addition, the protective resistor 36 has little influence on the value of the voltage signal between the output leads 38, 39.
According to another embodiment of the present invention, the absorber of the present invention has a forbidden band width of 3eV to 8eV, and barium titanate or lithium niobate (LiNbO) may be selected3) Lanthanum niobate (LaNbO)3) White gem (Al)2O3) Lithium tantalate (LiTaO)3) Lanthanum titanate (LaTaO)3) Zirconium oxide (ZrO), zinc oxide (ZnO)2) And one of magnesium oxide.
In other embodiments of the present invention, the material of the electrode is not limited to silver material, but may be gold, platinum, copper, aluminum, graphite, indium tin oxide (IOT), strontium ruthenate (SrRuO)3) Or metal alloys, etc.
The shape of the three electrodes on the surface of the absorber of the present invention is not limited to a strip shape, and other shapes such as a ring shape and a circle shape may be employed.
In other embodiments of the present invention, the absorber in a sheet shape may be arbitrarily oriented, and the size of the detection light incident surface of the absorber may be selected according to the size of the detected ultraviolet light beam.
Although the present invention has been described by way of preferred embodiments, the present invention is not limited to the embodiments described herein, and various changes and modifications may be made without departing from the scope of the present invention.
Claims (7)
1. A visible blind ultraviolet light detector, comprising:
an absorber having a forbidden band width of 3eV to 8 eV;
a first electrode and a second electrode disposed on a surface of the absorber;
a third electrode disposed between the first and second electrodes, the third electrode being proximate to the first electrode;
a power supply having a positive electrode and a negative electrode electrically connected to the first electrode and the second electrode, respectively; and
two output leads connected to the third electrode and to a negative pole of the power supply.
2. The blind visible ultraviolet light detector of claim 1, further comprising a protective resistor connected between the negative electrode of the power supply and the second electrode.
3. The visible blind uv detector of any one of claims 1 to 2, wherein the material of the absorber is one of strontium titanate, barium titanate, lithium niobate, lanthanum niobate, sapphire, lithium tantalate, lanthanum titanate, zirconium oxide, zinc oxide, and magnesium oxide.
4. The visible blind uv detector of claim 3, wherein the absorber is in the form of a sheet.
5. The visible blind uv detector of any one of claims 1 to 2, wherein the first, second and third electrodes are stripe, ring or circular, and the third electrode is spaced from the first electrode by a distance of 2 to 1000 microns.
6. The visible blind uv detector of any one of claims 1 to 2, wherein the material of the first, second and third electrodes is gold, platinum, copper, aluminum, graphite, indium tin oxide, strontium ruthenate or a metal alloy.
7. A method of making a visible blind uv detector according to claim 1, comprising the steps of:
step 1), preparing an absorber with the forbidden band width of 3 eV-8 eV;
step 2), growing a conductive material on the surface of the absorber to form a first electrode, a second electrode and a third electrode, wherein the third electrode is positioned between the first electrode and the second electrode and is close to the first electrode;
step 3), connecting the positive electrode and the negative electrode of a power supply to the first electrode and the second electrode respectively;
and 4) respectively leading out output leads from the third electrode and the negative electrode of the power supply.
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| CN112201704B (en) * | 2019-06-19 | 2022-12-06 | 中国科学院物理研究所 | Anti-interference high-sensitivity ultraviolet light detector |
| CN112490309B (en) * | 2020-12-07 | 2022-10-25 | 中国科学院长春光学精密机械与物理研究所 | Thin film ultraviolet detector and preparation method thereof |
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| CN1812303A (en) * | 2005-01-27 | 2006-08-02 | 中国科学院半导体研究所 | Efficient micro-mechanical tunable resonant cavity enhanced detector and producing method thereof |
| WO2016203712A1 (en) * | 2015-06-15 | 2016-12-22 | Canon Kabushiki Kaisha | Semiconductor device generating or detecting terahertz waves |
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| JPH0821728B2 (en) * | 1988-06-10 | 1996-03-04 | 浜松ホトニクス株式会社 | Semiconductor light receiving element and detector using the same |
| JP5661399B2 (en) * | 2010-09-28 | 2015-01-28 | 株式会社ジャパンディスプレイ | Optical sensor and optical sensor array |
| CN102231403B (en) * | 2011-06-20 | 2013-06-05 | 中国石油大学(北京) | Ultraviolet detector |
| CN106997909B (en) * | 2016-01-22 | 2019-04-05 | 中国科学院物理研究所 | A kind of highly sensitive blind deep ultraviolet light detector of subsisting |
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| CN1812303A (en) * | 2005-01-27 | 2006-08-02 | 中国科学院半导体研究所 | Efficient micro-mechanical tunable resonant cavity enhanced detector and producing method thereof |
| WO2016203712A1 (en) * | 2015-06-15 | 2016-12-22 | Canon Kabushiki Kaisha | Semiconductor device generating or detecting terahertz waves |
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