CN112490309B - Thin film ultraviolet detector and preparation method thereof - Google Patents
Thin film ultraviolet detector and preparation method thereof Download PDFInfo
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- CN112490309B CN112490309B CN202011416050.XA CN202011416050A CN112490309B CN 112490309 B CN112490309 B CN 112490309B CN 202011416050 A CN202011416050 A CN 202011416050A CN 112490309 B CN112490309 B CN 112490309B
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- 238000002360 preparation method Methods 0.000 title abstract description 19
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides BaTiO 3 A film ultraviolet detector and a preparation method thereof, in particular to a BaTiO with a forbidden band width of 3.9-4.4 eV 3 A film. Comprises a substrate, baTiO grown on the upper surface of the substrate 3 Film and composite with BaTiO 3 An interdigital electrode layer on the thin film; baTiO 2 3 The forbidden band width of the film is 3.9-4.4 eV; baTiO 2 3 The grain size of the film is 0.01-30 nm; baTiO 2 3 The thickness of the film is 50-500 nm; baTiO 2 3 The light absorption cut-off edge of the film is 280-320 nm. BaTiO prepared by the invention 3 The film has the characteristics of small crystal grain size, wide forbidden band width, absorption cut-off edge of 280-320 nm and the like, so that BaTiO 3 The detection wavelength corresponding to the ultraviolet detector is 280-320 nm, is an excellent UVB photoelectric detection material, and realizes BaTiO 3 The detection of the UVB wave band widens the application of the UVB wave band in the field of UVB ultraviolet detectors.
Description
Technical Field
The invention relates to a semiconductor material growth collarA BaTiO compound, especially 3 A thin film ultraviolet detector and a preparation method thereof.
Background
Although ultraviolet (10-400 nm) radiation has a small proportion in solar radiation, the radiation has important influence on the life of the whole human. Ultraviolet light can be classified according to wavelength into: ultraviolet A (UVA) with a wavelength of 320-400 nm; ultraviolet B (UVB) with a wavelength of 280-320 nm; ultraviolet C (UVC) with a wavelength of 100-280 nm. Wherein ultraviolet B (UVB) radiation is closely related to human health. In one aspect, a suitable amount of UVB radiation is beneficial for the formation of human vitamin D, thereby reducing the risk of developing cancer. On the other hand, excessive UVB radiation can suppress the immune system, cause cataracts and lead to skin cancer. Therefore, in order to best exploit the advantages and bypass the disadvantages, there is an urgent need for the detection and quantitative analysis of UVB radiation. In recent years, wide bandgap semiconductor ultraviolet detectors are considered to be third generation ultraviolet detectors that can replace vacuum photomultipliers and Si photomultipliers due to their advantages of small size, light weight, no need for filters during operation, no need for refrigeration, etc.
In wide bandgap semiconductor materials, baTiO 3 The perovskite structure is a direct band gap semiconductor, the forbidden band width is most commonly 3.41eV, and the perovskite structure has excellent detection performance on near ultraviolet band photoelectric detection. Due to the common BaTiO 3 The forbidden band width is too narrow, the corresponding optical absorption edge is 361nm, the detector is not suitable for being used as an ultraviolet detector of UVB wave band, the spectrum selectivity to UVB is not available, and the application of the detector in the UVB wave band photoelectric detector is limited.
Therefore, how to find a method for realizing BaTiO 3 The detection of the UVB band and the widening of the application thereof in the field of UVB ultraviolet detectors have become one of the focuses of great concern of many prospective researchers in the industry.
Disclosure of Invention
In order to overcome the technical problems in the prior art, the invention provides BaTiO 3 A thin film ultraviolet detector and a preparation method thereof; baTiO prepared by the invention 3 Thin film toolHas the characteristics of small crystal grain size, wide forbidden band width, absorption cut-off edge of 280-320 nm and the like, so that BaTiO 3 The detection wavelength corresponding to the ultraviolet detector is 280-320 nm, and the ultraviolet detector is an excellent UVB photoelectric detection material.
In order to achieve the purpose, the invention adopts the following specific technical scheme: baTiO 3 The thin film ultraviolet detector is characterized by comprising a substrate and BaTiO grown on the upper surface of the substrate 3 Film and composite on BaTiO 3 An interdigital electrode layer on the thin film; the BaTiO 3 The forbidden band width of the film is 3.9-4.4 eV; the BaTiO 3 The grain size of the film is 0.01-30 nm; the thickness of the BaTiO3 film is 50-500 nm; the BaTiO 3 The light absorption cut-off edge of the film is 280-320 nm.
Preferably, the BaTiO 3 Having a steep absorption cut-off edge; the BaTiO 3 At the position of the absorption cut-off edge, the transmissivity is reduced by 60 to 90 percent within the range of 6nm wave band.
Preferably, the substrate comprises one or more of a sapphire substrate, an indium tin oxide substrate, a quartz substrate and a magnesium oxide substrate; the thickness of the substrate is 150-800 nm.
Preferably, the material of the interdigital electrode layer comprises one or more of gold, silver, titanium, platinum and aluminum; the thickness of the interdigital electrode layer is 30-200 nm.
Preferably, a BaTiO 3 The preparation method of the ultraviolet detector is characterized by comprising the following steps of:
1) Mixing BaTiO with a solvent 3 Performing magnetron sputtering deposition on the target material, and depositing on a substrate at a certain temperature to obtain the BaTiO grown on the substrate 3 A substrate of a thin film;
2) BaTiO is obtained in the steps 3 Forming an interdigital electrode mask on the film, then forming a metal layer, removing the mask to form an interdigital electrode layer, and obtaining BaTiO 3 An ultraviolet detector.
Preferably, the BaTiO 3 The element ratio of Ba to Ti of the target material is 1;
the temperature of the substrate is 20-500 ℃;
the magnetron sputtering radio frequency power is 40-180W;
the pressure in the magnetron sputtering deposition process is 1 multiplied by 10 -2 ～1×10 1 Pa；
The time of magnetron sputtering deposition is 1-3 h;
the method for forming the interdigital electrode mask comprises negative photoresist photoetching.
Preferably, the means of forming the metal layer comprises one or more of small ion sputtering, thermal evaporation, PLD and ALD;
the sputtering current of the small-sized ion sputtering is 9mA;
the mask removing mode comprises ultrasonic removing;
the ultrasonic time is 3min;
the BaTiO 3 The photoresponse cut-off edge of the ultraviolet detector is 280-320 nm;
the BaTiO 3 The ultraviolet detector has an MSM structure.
The invention can obtain the following technical effects:
1. the BaTiO 3 The material has the characteristics of wide forbidden band width, small grain size, steep absorption cut-off edge and the like.
2. The invention prepares BaTiO 3 The film material also has the advantage of large area, so that the BaTiO prepared by the invention 3 The outer detector has the advantages of being capable of being used as a UVB ultraviolet detector and good spectral selectivity.
3. The preparation method of the controllable ultraviolet detector provided by the invention has the advantages of simple steps, mild conditions, good repeatability and controllable process, and is beneficial to large-scale popularization and application.
Drawings
FIG. 1a is a BaTiO compound of the present invention 3 Film ultraviolet detector and BaTiO provided by preparation method thereof 3 The structure of the ultraviolet detector is schematically illustrated;
FIG. 1b shows a BaTiO compound of the present invention 3 Film ultraviolet detector and BaTiO provided by preparation method thereof 3 A structural sketch map of an interdigital electrode layer of the ultraviolet detector is shown;
FIG. 2 shows a BaTiO of the present invention 3 Thin film ultraviolet detector and method of making the same BaTiO of example 1 3 X-ray diffraction pattern of the film;
FIG. 3 shows a BaTiO of the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 1 3 A UV-VIS absorption spectrum of the film;
FIG. 4 shows a BaTiO compound of the present invention 3 Thin film ultraviolet detector and method of making the same BaTiO of example 1 3 A forbidden band width diagram of the film;
FIG. 5 shows a BaTiO of the present invention 3 Thin film ultraviolet detector and method of making the same BaTiO of example 1 3 Scanning electron micrographs of the films;
FIG. 6 shows a BaTiO of the present invention 3 Thin film ultraviolet detector and method of making the same BaTiO of example 1 3 A light response characteristic curve chart of the ultraviolet detector;
FIG. 7 shows a BaTiO compound of the present invention 3 Thin film ultraviolet detector and method of manufacturing the same BaTiO in example 2 3 X-ray diffraction pattern of the film;
FIG. 8 shows a BaTiO of the present invention 3 Thin film ultraviolet detector and method of manufacturing the same BaTiO in example 2 3 A UV-VIS absorption spectrum of the film;
FIG. 9 shows a BaTiO of the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 2 3 A forbidden band width diagram of the film;
FIG. 10 shows a BaTiO compound of the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 2 3 Scanning electron micrographs of the films;
FIG. 11 shows a BaTiO of the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 3 3 X-ray diffraction pattern of the film;
FIG. 12 shows a BaTiO compound of the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 3 3 A UV-VIS absorption spectrum of the film;
FIG. 13 shows a BaTiO compound of the present invention 3 Thin film ultraviolet detector and method of making the same BaTiO of example 3 3 A forbidden band width diagram of the film;
FIG. 14 shows a BaTiO of the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 3 3 Scanning electron microscopy of the film;
wherein the reference numerals include: substrate 1, baTiO 3 A film 2 and an interdigital electrode layer 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
The following will describe a BaTiO provided by the present invention 3 The thin film ultraviolet detector and the preparation method thereof are explained in detail.
FIG. 1a is a BaTiO provided by the invention 3 The structure of the ultraviolet detector is schematically illustrated; FIG. 1b is a schematic diagram of the structure of the interdigital electrode layer.
As shown in FIG. 1, baTiO is added 3 Carrying out magnetron sputtering deposition on the target material, and depositing on a substrate at a certain temperature to obtain the BaTiO grown on the substrate 3 A substrate 1 of a film 2;
in BaTiO 3 Forming an interdigital electrode mask on the film 2, then forming a metal layer, removing the mask to form an interdigital electrode layer 3, and obtaining BaTiO 3 A thin film ultraviolet detector.
The BaTiO thus obtained 3 The forbidden band width of the film 2 is 3.9-4.4 eV; the BaTiO 3 The grain size of the film 2 is 0.01-30 nm; the BaTiO 3 The thickness of the film 2 is 50-500 nm; the BaTiO 3 The light absorption cutoff edge of the film 2 is 280 to 320nm.
Example 1
FIGS. 2 to 6 show a BaTiO compound according to the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 1 3 Film test data.
Putting the cleaned sapphire substrate into a magnetron sputtering growth chamber, adjusting the growth temperature to 500 ℃, and the pressure to be 1 multiplied by 10 -1 Pa. BaTiO with an element ratio of Ba to Ti of 1 3 Sputtering the target material with the radio frequency power of 60W, growing for 2h, closing the radio frequency, reducing the temperature of the substrate to room temperature to obtain BaTiO 3 A film.
In BaTiO 3 And forming 20 pairs of interdigital electrode masks with the spacing of 5 mu m and the length of 500 mu m on the thin film material by using negative photoresist lithography: putting the obtained sample into a small-sized film plating machine, and sputtering metal platinum under the condition that the pressure is 6Pa and the current is 9mA; removing the colloid mask by ultrasonic for 3min to form a platinum interdigital electrode layer to obtain the BaTiO with the MSM structure 3 An ultraviolet detector. Structure of the device fig. 1a shows a schematic diagram of the structure of the platinum interdigital electrode layer as shown in fig. 1 b.
For BaTiO obtained in example 1 3 The film was subjected to powder X-ray diffraction (XRD) measurement, and its pattern was shown in FIG. 2. As can be seen from the figure, baTiO prepared on a sapphire substrate 3 The film is in a perovskite structure. The XRD (110) peak is sharper, which indicates that the crystal quality is higher. From the full width at half maximum of the diffraction peak (110), the crystal grain size was calculated to be 20.53nm according to the scherrer equation.
For BaTiO obtained in example 1 3 The film is subjected to ultraviolet-visible light absorption spectrum test, and the obtained spectrum is shown in figure 3, and the graph shows that the prepared BaTiO 3 The film has a steep single light absorption cut-off edge which is around 298nm and is positioned in UVB wave band.
For BaTiO obtained in example 1 3 The film is subjected to ultraviolet-visible absorption spectrogram calculation to obtain (alpha hv) 2 - (hv) as shown in FIG. 4. It can be seen that BaTiO 3 The forbidden band width of the film is 4.1eV.
For BaTiO obtained in example 1 3 The film was subjected to Scanning Electron Microscope (SEM) testing, and its surface pattern was shown in fig. 5. As can be seen from the figure, baTiO was produced 3 The surface of the film is smooth, the crystal quality is good, and the film forming property is good.
For instance, a pair of fruitsBaTiO obtained in example 1 3 The ultraviolet detector performs a photoresponse characteristic test to obtain a spectrum shown as 6. As can be seen from the figure, baTiO was produced 3 The light responsivity of the ultraviolet detector under 5V is 0.0087A/W, the cut-off edge of-3 dB is 312nm, and the ultraviolet detector is in UVB wave band, which shows that the prepared BaTiO 3 The ultraviolet detector is suitable for being used as a UVB ultraviolet detector, the difference value of the-3 dB cut-off edge and the wavelength corresponding to the peak value responsivity is only 18nm, and the ultraviolet detector has good spectrum selectivity.
Example 2
FIGS. 7 to 10 show a BaTiO compound according to the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 2 3 Film test data.
Putting the cleaned sapphire substrate into a magnetron sputtering growth chamber, adjusting the growth temperature to 20 ℃, and controlling the pressure to be 1 multiplied by 10 -2 Pa. BaTiO with an element ratio of Ba to Ti of 1 3 Sputtering the target material with the radio frequency power of 40W, growing for 1h, closing the radio frequency, and reducing the temperature of the substrate to room temperature to obtain BaTiO 3 A film.
In BaTiO 3 Negative photoresist lithography is used to form 20 pairs of interdigital electrode masks with a pitch of 5 μm and a length of 500 μm on the thin film material. The obtained sample was put into a small-sized film coater, and metal platinum was sputtered with a current of 9mA under a pressure of 6 Pa. Then removing the colloid mask by ultrasonic for 3min to obtain the BaTiO with the MSM structure 3 An ultraviolet detector.
For BaTiO obtained in example 2 3 The film was subjected to powder X-ray diffraction (XRD) measurement, and its spectrum was as shown in FIG. 7. As can be seen from the figure, baTiO prepared on a sapphire substrate 3 The film is in a perovskite structure. The XRD (110) peak is sharper, which indicates higher crystalline quality. From the full width at half maximum of the diffraction peak (110), the crystal grain size was calculated to be 21.64nm according to the scherrer equation.
The obtained spectrum is shown in FIG. 8, from which it can be seen that BaTiO was prepared 3 The film has a steep single light absorption cut-off edge, the light absorption cut-off edge is about 291nm and is positioned in a UVB wave band.
For BaTi obtained in example 3O 3 The film is subjected to ultraviolet-visible absorption spectrogram calculation to obtain (alpha hv) 2 - (hv), as in FIG. 9, baTiO can be seen 3 The forbidden band width of the film is 4.40eV.
For BaTiO obtained in example 2 3 The films were subjected to Scanning Electron Microscopy (SEM) testing, as shown in FIG. 10, of the prepared BaTiO 3 The surface of the film is relatively flat and has good film forming property.
For BaTiO obtained in example 2 3 Testing photoresponse characteristics of ultraviolet detector to prepare BaTiO 3 The peak light responsivity of the ultraviolet detector under 5V is 286nm, the peak light responsivity is 0.0018A/W, the-3 dB cut-off edge is 297nm and is in UVB wave band, which shows that the prepared BaTiO is 3 The uv detector is suitable as a UVB uv detector.
Example 3
FIGS. 11 to 14 show a BaTiO compound according to the present invention 3 Film ultraviolet detector and its preparation method BaTiO in embodiment 3 3 Film test data.
And putting the cleaned sapphire substrate into a magnetron sputtering growth chamber, and adjusting the growth temperature to 500 ℃ and the pressure to be 1 multiplied by 10Pa. BaTiO with an element ratio of Ba to Ti of 1 3 Sputtering the target material with the radio frequency power of 180W, growing for 2h, closing the radio frequency, reducing the temperature of the substrate to room temperature to obtain BaTiO 3 A film.
In BaTiO 3 And forming 20 pairs of interdigital electrode masks with the spacing of 5 μm and the length of 500 μm on the thin film material by using negative photoresist lithography. The obtained sample was placed in a small-sized coater, and metal platinum was sputtered at a current of 9mA under a pressure of 6 Pa. Then removing the colloid mask by ultrasonic for 3min to obtain the BaTiO with the MSM structure 3 An ultraviolet detector.
For BaTiO obtained in example 3 3 Subjecting the film to powder X-ray diffraction (XRD) test, and growing BaTiO 3 The thin film had a perovskite structure, and the main diffraction peak was (110) as shown in fig. 11.
For BaTiO obtained in example 3 3 The film is subjected to ultraviolet-visible light absorption spectrum test to prepare BaTiO 3 Film(s)The relatively steep light absorption cutoff edge is around 310nm and is in the UVB band, as shown in fig. 12.
For BaTiO obtained in example 3 3 The film is subjected to ultraviolet-visible absorption spectrogram calculation to obtain (alpha hv) 2 - (hv), as shown in FIG. 13, baTiO can be seen 3 The forbidden band width of the film is 3.92eV.
For BaTiO obtained in example 3 3 The film was subjected to Scanning Electron Microscope (SEM) testing, as shown in FIG. 14, to prepare BaTiO 3 The surface of the film is relatively flat and the film forming property is good.
For BaTiO obtained in example 3 3 The ultraviolet detector carries out photoresponse characteristic test, and the prepared BaTiO 3 The peak light responsivity of the ultraviolet detector under 5V is 305nm, the peak light responsivity is 0.0013A/W, a-3 dB cut-off edge is 316nm, and the ultraviolet detector is in UVB wave band, which indicates that the prepared BaTiO is 3 The ultraviolet detector is suitable as a UVB ultraviolet detector.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (6)
1. The thin film ultraviolet detector is characterized by comprising a substrate (1) and BaTiO grown on the upper surface of the substrate 3 Film (2) and composite with BaTiO 3 An interdigital electrode layer (3) on the thin film (2); the BaTiO 3 The forbidden band width of the film (2) is 4.4eV; the BaTiO 3 The grain size of the film (2) is 21.64nm; the BaTiO 3 The thickness of the film (2) is 50-500 nm; the BaTiO 3 The light absorption cut-off edge of the film (2) is 280-320 nm;
the BaTiO 3 The film (2) is of a perovskite structure and has a steep single light absorption cut-off edge; the BaTiO 3 The transmittance of the film (2) is reduced by 60 to 90 percent in the wavelength range of 6nm at the position of the absorption cut-off edge; wherein, baTiO 3 The element ratio of Ba to Ti of the target material is 1; the substrate temperature is 20 ℃; the magnetron sputtering radio frequency power is 40W; the pressure in the magnetron sputtering deposition process is 1 x 10 -2 Pa; the time of magnetron sputtering deposition is 1h.
2. The thin film ultraviolet detector of claim 1, characterized in that the substrate (1) comprises one or more of a sapphire substrate, an indium tin oxide substrate, a quartz substrate and a magnesium oxide substrate; the thickness of the substrate (1) is 150-800 nm.
3. The thin film ultraviolet detector as claimed in claim 1, wherein the material of the interdigital electrode layer (3) comprises one or more of gold, silver, titanium, platinum and aluminum; the thickness of the interdigital electrode layer (3) is 30-200 nm.
4. A method for manufacturing an ultraviolet detector according to any one of claims 1 to 3, comprising the steps of:
1) Mixing BaTiO 3 Performing magnetron sputtering deposition on the target material, and depositing on a substrate at a certain temperature to obtain the BaTiO grown on the substrate 3 A substrate for the membrane (2);
2) In the BaTiO 3 Forming an interdigital electrode mask on the film (2), then forming a metal layer, removing the mask to form an interdigital electrode layer (3) to obtain BaTiO 3 An ultraviolet detector.
5. The method for manufacturing an ultraviolet detector as set forth in claim 4,
the method for forming the interdigital electrode mask comprises negative photoresist photoetching.
6. The method for preparing an ultraviolet detector as set forth in claim 4, wherein the metal layer is formed by one or more of small ion sputtering, thermal evaporation, PLD and ALD;
the sputtering current of the small-sized ion sputtering is 9mA;
the mask removing mode comprises ultrasonic removing;
the ultrasonic time is 3min;
the BaTiO 3 The photoresponse cut-off edge of the ultraviolet detector is 280-320 nm;
the BaTiO 3 The ultraviolet detector has an MSM structure.
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