CN112490309A - Thin film ultraviolet detector and preparation method thereof - Google Patents
Thin film ultraviolet detector and preparation method thereof Download PDFInfo
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- CN112490309A CN112490309A CN202011416050.XA CN202011416050A CN112490309A CN 112490309 A CN112490309 A CN 112490309A CN 202011416050 A CN202011416050 A CN 202011416050A CN 112490309 A CN112490309 A CN 112490309A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 title claims abstract description 18
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- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 230000031700 light absorption Effects 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
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- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention provides BaTiO3A film ultraviolet detector and a preparation method thereof, in particular to a BaTiO with the forbidden band width of 3.9-4.4 eV3A film. Comprises a substrate, BaTiO grown on the upper surface of the substrate3Film and composite with BaTiO3An interdigital electrode layer on the thin film; BaTiO 23The forbidden band width of the film is 3.9-4.4 eV; BaTiO 23The grain size of the film is 0.01-30 nm; BaTiO 23The thickness of the film is 50-500 nm; BaTiO 23The light absorption cut-off edge of the film is 280-320 nm. BaTiO prepared by the invention3The film has the characteristics of small crystal grain size, wide forbidden band width, 280-320 nm absorption cut-off edge and the like, so that BaTiO3The detection wavelength corresponding to the ultraviolet detector is 280-320 nm, and the ultraviolet detector is an excellent UVB photoelectric detection material, and realizes BaTiO3The detection of the UVB wave band widens the application of the UVB wave band in the field of UVB ultraviolet detectors.
Description
Technical Field
The invention relates to the field of semiconductor material growth, in particular to BaTiO3A thin film ultraviolet detector and a preparation method thereof.
Background
Sunlight is one of basic energy sources for survival and development of the human society, and although ultraviolet light (10-400 nm) radiation has a small proportion in solar radiation, the ultraviolet light has important influence on the life of the whole human. Ultraviolet light can be classified according to wavelength into: ultraviolet A (UVA) with a wavelength of 320-400 nm; ultraviolet B (UVB) with a wavelength of 280-320 nm; ultraviolet C (UVC) with a wavelength of 100-280 nm. Wherein ultraviolet B (UVB) radiation is closely related to human health. In one aspect, a suitable amount of UVB radiation favors the formation of human vitamin D, which may reduce the risk of developing cancer. On the other hand, excessive UVB radiation can suppress the immune system, cause cataracts and lead to skin cancer. Therefore, in order to best exploit the advantages and bypass the disadvantages, there is an urgent need for the detection and quantitative analysis of UVB radiation. In recent years, wide bandgap semiconductor ultraviolet detectors are considered to be third generation ultraviolet detectors that can replace vacuum photomultipliers and Si photomultipliers due to their advantages of small size, light weight, no need for filters during operation, no need for refrigeration, etc.
In wide bandgap semiconductor materials, BaTiO3The perovskite structure is a direct band gap semiconductor, the forbidden band width is most commonly 3.41eV, and the perovskite structure has excellent detection performance on near ultraviolet band photoelectric detection. Due to the common BaTiO3The forbidden band width is too narrow, the corresponding optical absorption edge is 361nm, the ultraviolet detector is not suitable for being used as an ultraviolet detector of UVB wave band, the ultraviolet detector has no spectrum selectivity to UVB, and the application of the ultraviolet detector in UVB wave band is limited.
Therefore, how to find a method for realizing BaTiO3The detection of the UVB band and the widening of the application thereof in the field of UVB ultraviolet detectors have become one of the focuses of great concern of many prospective researchers in the industry.
Disclosure of Invention
In order to overcome the prior technical problems, the invention provides BaTiO3A thin film ultraviolet detector and a preparation method thereof; BaTiO prepared by the invention3The film has the characteristics of small crystal grain size, wide forbidden band width, 280-320 nm absorption cut-off edge and the like, so that BaTiO3The detection wavelength corresponding to the ultraviolet detector is 280-320 nm, and the ultraviolet detector is an excellent UVB photoelectric detection material.
In order to achieve the purpose, the invention adopts the following specific technical scheme: BaTiO3The film ultraviolet detector is characterized by comprising a substrate and BaTiO grown on the upper surface of the substrate3Film and composite with BaTiO3An interdigital electrode layer on the thin film; the BaTiO3The forbidden band width of the film is 3.9-4.4 eV; the BaTiO3The grain size of the film is 0.01-30 nm; the thickness of the BaTiO3 film is 50-500 nm; the BaTiO3The light absorption cut-off edge of the film is 280-320 nm.
Preferably, the BaTiO3Having a steep absorption cut-off edge; the BaTiO3At the position of the absorption cut-off edge, the transmissivity is reduced by 60 to 90 percent within the wave band of 6 nm.
Preferably, the substrate comprises one or more of a sapphire substrate, an indium tin oxide substrate, a quartz substrate and a magnesium oxide substrate; the thickness of the substrate is 150-800 nm.
Preferably, the material of the interdigital electrode layer comprises one or more of gold, silver, titanium, platinum and aluminum; the thickness of the interdigital electrode layer is 30-200 nm.
Preferably, a BaTiO3The preparation method of the ultraviolet detector is characterized by comprising the following steps:
1) mixing BaTiO3Magnetron sputtering deposition is carried out on the target material, and the lining is arranged at a certain temperatureDepositing on the bottom to obtain the BaTiO grown3A substrate of a thin film;
2) BaTiO is obtained in the above step3Forming an interdigital electrode mask on the film, then forming a metal layer, removing the mask to form an interdigital electrode layer, and obtaining BaTiO3An ultraviolet detector.
Preferably, the BaTiO3The element ratio of Ba to Ti of the target material is 1: 1;
the temperature of the substrate is 20-500 ℃;
the magnetron sputtering radio frequency power is 40-180W;
the pressure in the magnetron sputtering deposition process is 1 multiplied by 10-2～1×101Pa；
The magnetron sputtering deposition time is 1-3 h;
the method for forming the interdigital electrode mask comprises negative photoresist photoetching.
Preferably, the means of forming the metal layer comprises one or more of small ion sputtering, thermal evaporation, PLD and ALD;
the sputtering current of the small-sized ion sputtering is 9 mA;
the mask removing mode comprises ultrasonic removing;
the ultrasonic time is 3 min;
the BaTiO3The light response cut-off edge of the ultraviolet detector is 280-320 nm;
the BaTiO3The ultraviolet detector has an MSM structure.
The invention can obtain the following technical effects:
1. the BaTiO3The material has the characteristics of wide forbidden band width, small grain size, steep absorption cut-off edge and the like.
2. The invention prepares BaTiO3The film material also has the advantage of large area, so that the BaTiO prepared by the invention3The outer detector has the advantages of being capable of being used as a UVB ultraviolet detector and good spectral selectivity.
3. The preparation method of the controllable ultraviolet detector provided by the invention has the advantages of simple steps, mild conditions, good repeatability and controllable process, and is beneficial to large-scale popularization and application.
Drawings
FIG. 1a shows a BaTiO of the present invention3Film ultraviolet detector and BaTiO provided by preparation method thereof3The structure of the ultraviolet detector is schematically illustrated;
FIG. 1b shows a BaTiO of the present invention3Film ultraviolet detector and BaTiO provided by preparation method thereof3The structure diagram of an interdigital electrode layer of the ultraviolet detector is shown;
FIG. 2 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 13X-ray diffraction pattern of the film;
FIG. 3 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 13A UV-VIS absorption spectrum of the film;
FIG. 4 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 13A forbidden band width diagram of the film;
FIG. 5 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 13Scanning electron microscopy of the film;
FIG. 6 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 13A light response characteristic curve chart of the ultraviolet detector;
FIG. 7 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 23X-ray diffraction pattern of the film;
FIG. 8 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 23A UV-VIS absorption spectrum of the film;
FIG. 9 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 23A forbidden band width diagram of the film;
FIG. 10 shows a BaTiO of the present invention3Thin film ultraviolet detectorAnd preparation method of BaTiO in example 23Scanning electron microscopy of the film;
FIG. 11 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 33X-ray diffraction pattern of the film;
FIG. 12 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 33A UV-VIS absorption spectrum of the film;
FIG. 13 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 33A forbidden band width diagram of the film;
FIG. 14 shows a BaTiO of the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 33Scanning electron microscopy of the film;
wherein the reference numerals include: substrate 1, BaTiO3A film 2 and an interdigital electrode layer 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
The following will describe a BaTiO provided by the present invention3The thin film ultraviolet detector and the preparation method thereof are explained in detail.
FIG. 1a is a BaTiO provided by the invention3The structure of the ultraviolet detector is schematically illustrated; FIG. 1b is a schematic diagram of the structure of the interdigital electrode layer.
As shown in FIG. 1, BaTiO is added3Carrying out magnetron sputtering deposition on the target material, and depositing on a substrate at a certain temperature to obtain the BaTiO grown on the substrate3A substrate 1 of a film 2;
in BaTiO3Forming an interdigital electrode mask on the film 2, then forming a metal layer, removing the mask to form an interdigital electrode layer 3, and obtaining BaTiO3A thin film ultraviolet detector.
Obtained byBaTiO of (5)3The forbidden band width of the film 2 is 3.9-4.4 eV; the BaTiO3The grain size of the film 2 is 0.01-30 nm; the BaTiO3The thickness of the film 2 is 50-500 nm; the BaTiO3The light absorption cut-off edge of the film 2 is 280 to 320 nm.
Example 1
FIGS. 2 to 6 show a BaTiO compound according to the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 13Film test data.
Putting the cleaned sapphire substrate into a magnetron sputtering growth chamber, adjusting the growth temperature to 500 ℃, and the pressure to be 1 multiplied by 10-1Pa. BaTiO with an element ratio of Ba to Ti of 1:1 is used3Sputtering the target material with the radio frequency power of 60W, growing for 2h, closing the radio frequency, and reducing the temperature of the substrate to room temperature to obtain BaTiO3A film.
In BaTiO3And forming 20 pairs of interdigital electrode masks with the spacing of 5 mu m and the length of 500 mu m on the thin film material by using negative photoresist lithography: putting the obtained sample into a small-sized film plating machine, and sputtering metal platinum under the condition that the pressure is 6Pa and the current is 9 mA; removing the colloid mask by ultrasonic for 3min to form a platinum interdigital electrode layer to obtain the BaTiO with the MSM structure3An ultraviolet detector. Device structure diagram fig. 1a shows a schematic diagram of a platinum interdigitated electrode layer structure as shown in fig. 1 b.
For BaTiO obtained in example 13The film was subjected to powder X-ray diffraction (XRD) measurement, and its spectrum was as shown in FIG. 2. As can be seen from the figure, BaTiO prepared on a sapphire substrate3The film is in a perovskite structure. The XRD (110) peak is sharper, which indicates that the crystal quality is higher. From the full width at half maximum of the diffraction peak (110), the crystal grain size was calculated to be 20.53nm according to the scherrer equation.
For BaTiO obtained in example 13The film is subjected to ultraviolet-visible light absorption spectrum test, and the obtained spectrum is shown in figure 3, from which the BaTiO prepared3The film has a steep single light absorption cut-off edge, the light absorption cut-off edge is around 298nm and is positioned in a UVB wave band.
For BaTiO obtained in example 13The film is subjected to ultraviolet-visible absorption spectrogram calculation to obtain (alpha hv)2- (hv) scheme, as shown in FIG. 4. It can be seen that BaTiO3The forbidden band width of the film is 4.1 eV.
For BaTiO obtained in example 13The film was subjected to Scanning Electron Microscope (SEM) testing, and its surface pattern was shown in fig. 5. As can be seen from the figure, BaTiO was prepared3The surface of the film is smooth, the crystal quality is good, and the film forming property is good.
For BaTiO obtained in example 13The ultraviolet detector performs a photoresponse characteristic test to obtain a spectrum shown as 6. As can be seen from the figure, BaTiO was prepared3The light responsivity of the ultraviolet detector under 5V is 0.0087A/W, the cut-off edge of-3 dB is 312nm, and the ultraviolet detector is in UVB wave band, which shows that the prepared BaTiO3The ultraviolet detector is suitable for being used as a UVB ultraviolet detector, the difference value of a-3 dB cut-off edge and the wavelength corresponding to the peak responsivity is only 18nm, and the ultraviolet detector has good spectral selectivity.
Example 2
FIGS. 7 to 10 show a BaTiO compound according to the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 23Film test data.
Putting the cleaned sapphire substrate into a magnetron sputtering growth chamber, adjusting the growth temperature to 20 ℃, and adjusting the pressure to 1 multiplied by 10-2Pa. BaTiO with an element ratio of Ba to Ti of 1:1 is used3Sputtering the target material with the radio frequency power of 40W, growing for 1h, closing the radio frequency, and reducing the temperature of the substrate to room temperature to obtain BaTiO3A film.
In BaTiO3And forming 20 pairs of interdigital electrode masks with the spacing of 5 μm and the length of 500 μm on the thin film material by using negative photoresist lithography. The obtained sample was put into a small-sized film coater, and metal platinum was sputtered with a current of 9mA under a pressure of 6 Pa. Then removing the colloid mask by ultrasonic for 3min to obtain the BaTiO with the MSM structure3An ultraviolet detector.
For BaTiO obtained in example 23The film was subjected to powder X-ray diffraction (XRD) measurement, and its spectrum was as shown in FIG. 7. As can be seen from the figure, inBaTiO prepared on sapphire substrate3The film is in a perovskite structure. The XRD (110) peak is sharper, which indicates that the crystal quality is higher. From the full width at half maximum of the diffraction peak (110), the crystal grain size was 21.64nm as calculated according to the Sheer equation.
The obtained spectrum is shown in FIG. 8, from which it can be seen that BaTiO was prepared3The film has a steep single light absorption cut-off edge, the light absorption cut-off edge is about 291nm and is positioned in a UVB wave band.
For BaTiO obtained in example 33The film is subjected to ultraviolet-visible absorption spectrogram calculation to obtain (alpha hv)2- (hv), as in FIG. 9, BaTiO can be seen3The forbidden band width of the film is 4.40 eV.
For BaTiO obtained in example 23The film was subjected to Scanning Electron Microscope (SEM) testing, as shown in FIG. 10, of the BaTiO prepared3The surface of the film is relatively flat and the film forming property is good.
For BaTiO obtained in example 23Testing photoresponse characteristics of ultraviolet detector to prepare BaTiO3The peak light responsivity of the ultraviolet detector under 5V is 286nm, the peak light responsivity is 0.0018A/W, the-3 dB cut-off edge is 297nm and is in UVB wave band, which shows that the prepared BaTiO is3The ultraviolet detector is suitable as a UVB ultraviolet detector.
Example 3
FIGS. 11 to 14 show a BaTiO compound according to the present invention3Film ultraviolet detector and its preparation method BaTiO in embodiment 33Film test data.
And putting the cleaned sapphire substrate into a magnetron sputtering growth chamber, and adjusting the growth temperature to 500 ℃ and the pressure to be 1 multiplied by 10 Pa. BaTiO with an element ratio of Ba to Ti of 1:1 is used3Sputtering the target material with the radio frequency power of 180W, growing for 2h, closing the radio frequency, and reducing the temperature of the substrate to room temperature to obtain BaTiO3A film.
In BaTiO3And forming 20 pairs of interdigital electrode masks with the spacing of 5 μm and the length of 500 μm on the thin film material by using negative photoresist lithography. Putting the obtained sample into a small-sized film coating machine, and controlling the current to be 9m under the condition that the pressure is 6PaAnd A, sputtering metal platinum. Then removing the colloid mask by ultrasonic for 3min to obtain the BaTiO with the MSM structure3An ultraviolet detector.
For BaTiO obtained in example 33Subjecting the film to powder X-ray diffraction (XRD) test, and growing BaTiO3The thin film had a perovskite structure, and as shown in FIG. 11, the main diffraction peak was (110).
For BaTiO obtained in example 33The film is subjected to ultraviolet-visible light absorption spectrum test to prepare BaTiO3The film has a relatively steep light absorption cut-off, which is around 310nm and is in the UVB band, as shown in fig. 12.
For BaTiO obtained in example 33The film is subjected to ultraviolet-visible absorption spectrogram calculation to obtain (alpha hv)2- (hv), as shown in FIG. 13, it can be seen that BaTiO3The forbidden band width of the film is 3.92 eV.
For BaTiO obtained in example 33The film was subjected to Scanning Electron Microscope (SEM) testing, as shown in FIG. 14, to prepare BaTiO3The surface of the film is relatively flat and the film forming property is good.
For BaTiO obtained in example 33Testing photoresponse characteristics of ultraviolet detector to prepare BaTiO3The peak light responsivity of the ultraviolet detector under 5V is 305nm, the peak light responsivity is 0.0013A/W, the-3 dB cut-off edge is 316nm, and the ultraviolet detector is in UVB wave band, which shows that the prepared BaTiO is3The ultraviolet detector is suitable as a UVB ultraviolet detector.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (7)
1. The film ultraviolet detector is characterized by comprising a substrate (1) and BaTiO growing on the upper surface of the substrate3Film (2) and composite material of BaTiO3An interdigital electrode layer (3) on the thin film (2); the BaTiO3The forbidden band width of the film (2) is 3.9-4.4 eV; the BaTiO3The grain size of the film (2) is 0.01-30 nm; the BaTiO3The thickness of the film (2) is 50-500 nm; the BaTiO3The light absorption cut-off edge of the film (2) is 280-320 nm.
2. The thin film ultraviolet detector of claim 1, wherein the BaTiO3The film (2) has a steep absorption cut-off edge; the BaTiO3The transmittance of the film (2) is reduced by 60 to 90 percent in the wave band range of 6nm at the position of the absorption cut-off edge.
3. The thin film ultraviolet detector of claim 1, characterized in that the substrate (1) comprises one or more of a sapphire substrate, an indium tin oxide substrate, a quartz substrate and a magnesium oxide substrate; the thickness of the substrate (1) is 150-800 nm.
4. The thin film ultraviolet detector according to claim 1, characterized in that the material of the interdigital electrode layer (3) comprises one or more of gold, silver, titanium, platinum and aluminum; the thickness of the interdigital electrode layer (3) is 30-200 nm.
5. A preparation method of an ultraviolet detector is characterized by comprising the following steps:
1) mixing BaTiO3Performing magnetron sputtering deposition on the target material, and depositing on a substrate at a certain temperature to obtain the BaTiO grown3A substrate for the film (2);
2) in the BaTiO3Forming an interdigital electrode mask on the film (2), then forming a metal layer, removing the mask to form an interdigital electrode layer (3) to obtain BaTiO3An ultraviolet detector.
6. The method of claim 5, wherein the BaTiO is used for preparing the UV detector3The element ratio of Ba to Ti of the target material is 1: 1;
the temperature of the substrate is 20-500 ℃;
the magnetron sputtering radio frequency power is 40-180W;
the pressure in the magnetron sputtering deposition process is 1 multiplied by 10-2～1×101Pa；
The magnetron sputtering deposition time is 1-3 h;
the method for forming the interdigital electrode mask comprises negative photoresist photoetching.
7. The method for preparing an ultraviolet detector as set forth in claim 5, wherein the metal layer is formed by one or more of small ion sputtering, thermal evaporation, PLD and ALD;
the sputtering current of the small-sized ion sputtering is 9 mA;
the mask removing mode comprises ultrasonic removing;
the ultrasonic time is 3 min;
the BaTiO3The light response cut-off edge of the ultraviolet detector is 280-320 nm;
the BaTiO3The ultraviolet detector has MSM junctionAnd (5) forming.
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