CN1812303A - Efficient micro-mechanical tunable resonant cavity enhanced detector and producing method thereof - Google Patents
Efficient micro-mechanical tunable resonant cavity enhanced detector and producing method thereof Download PDFInfo
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Abstract
This invention is a kind of high-efficiency micro-machine tunable resonant cavity enhancement mode probe. Its structure concludes: a substrate; a bonded boundary layer which is produced on the substrate; a first reflector produced on the bonded boundary layer, through which makes the first reflector and the substrate firmly bonding together; a extension layer produced on the first reflector. The probe active area and machine tuning area constitute cavity part of the resonant cavity; a secondary reflector produced on the extension layer; a protection layer produced on the surface and flank of the probe active area part; The first, secondary and third probe electrode are produced on the probe active area part and machine tuning part. .
Description
Technical field
The present invention relates to a kind of efficient micro-mechanical tunable resonant cavity enhanced detector and preparation method thereof.Be particularly related to a kind of micromechanical process that utilizes and make the efficient resonant cavity enhanced detector of tunable long wavelength (1.3～1.6 mu m waveband).
Background technology
Along with the arrival of information age, global traffic amount rapid growth, the development of communication network is faced with unprecedented opportunities and challenge.Just begin developed as far back as the optical-fibre communications sixties, the single channel optical fiber communication can not have been satisfied the growing demand of the traffic, people begin to seek to transmit simultaneously the light signal of a plurality of wavelength in an optical fiber, wavelength division multiplexing (WDM) technology that Here it is, the mid-90, the maturation of erbium-doped fiber amplifier promoted the commercialization of wavelength division multiplex device especially, developed into today wavelength-division multiplex technique and developed to the dense wavelength division technology.
One of key device of wavelength-division multiplex system: download the demultiplexing receiver that speech channel is used, generally adopt the discrete combined mode of demultiplexing (filter)+photodetector in the commercialization at present.Demodulation multiplexer commonly used at present mainly comprises: film interference filter, reflection-type diffraction grating, array waveguide grating, waveguide grating type demultiplexing device, optical fiber coupled mode demultiplexing device.There are many shortcomings in the demultiplexing receiver of this discrete combined mode, and such as inserting loss, volume is big, poor stability etc.(Resonant CavityEnhanced, RCE) detector is a kind of scheme of first-selection and demultiplexing and detector are integrated in all over the body resonant cavity enhanced.Resonant cavity enhanced detector has not only possessed the wavelength selectivity that demodulation multiplexer had, and because the humidification of resonant cavity has solved the contradiction of mutual restriction between the quantum efficiency that exists and the response speed to a certain extent in conventional photodetectors.Compare with discrete demultiplexing receiver, a clear superiority of resonant cavity is the integrated level height.
The basic structure of resonant cavity detector comprises speculum and intermediate light uptake zone up and down.The prime design requirement of resonant cavity detector is the reflectivity enough high (preferably near 100%) of down speculum, and the reflectivity of the speculum of upper reflector and following speculum satisfies matching relationship R
1=R
2e
-2 α dShi Xiaoguo optimum, wherein R
1The reflectivity of expression upper reflector, R
2Expression is the reflectivity of speculum down, and α represents the absorption coefficient of light of absorbing material, and d is the thickness of uptake zone.The 980nm wave band resonant cavity detector that comparative maturity has been arranged in the market, but still there is not ripe long wavelength's (1.3～1.6 mu m waveband) resonant cavity detector product, its main cause is as follows: the high material of long wavelength light responsiveness is mainly contained InP base system row epitaxial material, and typical example has In
0.53Ga
0.47As, this material and InP substrate lattice match, absorbing wavelength can extend to 1.65 μ m, and the epitaxy technique maturation.But the refringence of the material InP/InGaAsP that following speculum is used is very little, reach 99% reflectivity, and the logarithm of InP/InGaAsP deielectric-coating needs 30 pairs, even more than 40 pairs, difficulty is big, and the cost height is not suitable for industrial production.A solution is to utilize the Direct Bonding technology that the InGaAs light absorbing zone is bonded to the bigger GaAs/AlAs speculum of refringence, replace InP/InGaAsP with GaAs/AlAs, the difficult point that wherein relates generally to comprises 2 points, one, the Direct Bonding technology difficulty is higher, the cleannes that generally require operational environment are more than 100 grades, its two, the speculum of growth high reflectance (more than 99%) also needs the GaAs/AlAs epitaxial loayer more than 20 pairs.As research, said method all has the pertinent literature report: G.L.Christenson et al.IEEE Photonics Technol.Lett.Vol.9, pp.725,1997, and N.Chitica et al.IEEE Photonics Technol.Lett.Vol.11, pp.584,1999.
Be clearer elaboration content of the present invention, we at first introduce device architecture, the operation principle of conventional micro-mechanical adjustable detector, and characteristics.As shown in Figure 1, a basic micro-mechanical adjustable detector, its structure comprises: following speculum 10, theoretically, the reflectivity of following speculum is high more good more, generally up to more than 99%; Detector active region 12 under being positioned on the speculum, the district of light absorption just, for optical communication 1.3～1.6 mu m wavebands, active area generally adopts the InGaAs material of InP base, it and InP base lattice match, the epitaxy technique maturation, light absorption is strong; The upper reflector 13 of position-controllable and following speculum 10 constitute a pair of resonant cavity system, and the reflectivity of upper reflector needs and the reflectivity of following speculum is complementary; And the mechanical adjustment control section 14 of microcavity.When light incided resonant cavity, because the coherent interference effect of resonant cavity, the light that satisfies the particular phases condition entered resonant cavity, and other light are reflected, thereby had the wavelength selection, and the response curve of typical resonant cavity and structure are shown in Fig. 2 A, Fig. 2 B.The position of resonant wavelength and chamber are long closely bound up, utilize the electrostatic attraction effect control chamber between two electrodes long, thereby reach tuning purpose.
The basic design principle of wavelength selectivity better detection device is: the reflectivity of following speculum is enough high, and the reflectivity of the reflectivity of upper reflector and following speculum is complementary, and light absorption district material has stronger absorption to the light of service band.Two kinds of designs of the general employing of conventional tunable detector, the one speculum adopts the InP/InGaAsP material, and active area adopts InGaAsP (perhaps InGaAs), disposable epitaxial growth; It two is that speculum adopts the GaAs/AlAs material, and active area adopts InGaAsP (perhaps InGaAs), perhaps the GaInNAs material of GaAs base.Because the refractive index difference of InP/InGaAsP is little, surpass 99% for reaching reflectivity, the logarithm of deielectric-coating needs 30 pairs even more than 40 right, extension cost height, therefore the speculum of long wavelength's (especially 1.55 mu m wavebands) detector adopts the InP/InGaAsP material, often is not suitable for industrial production.Design two also is difficult to the logical of row, if adopt GaAs base GaInNAs material as light absorbing material, existing processes technology extension has the GaInNAs of response still immature to 1.55 mum wavelengths; If InGaAs light absorption district is bonded on the GaAs/AlAs speculum of high specular reflectivity of reflector by the Direct Bonding technology, also there are a lot of difficult points, at first the speculum of extension long wavelength high reflectance is equally very difficult, and its two Direct Bonding technology difficulty height is not easy to improve rate of finished products.
Summary of the invention
The objective of the invention is to disclose a kind of efficient micro-mechanical tunable resonant cavity enhanced detector and preparation method thereof, in the micro-mechanical adjustable panel detector structure of routine, speculum adopts the InP/InGaAsP material up and down, because the refringence of InP and InGaAsP is very little, for obtaining reflectivity is that 99% speculum needs extension more than 30 pairs, thereby the cost costliness, be not suitable for industrial production.A kind of alternative method is that active area is bonded directly on the GaAs/AlAs speculum, but because Direct Bonding technological requirement height often needs to add glossing, has not only increased cost of manufacture, and increased technology difficulty, is difficult to guarantee rate of finished products.Speculum adopts Si/SiO about in the panel detector structure that the present invention discloses
2Material, 5 couples of Si/SiO
2Material just can obtain the reflectivity up to 99%, has solved the high problem of high reflectivity mirror extension cost.By the sol-gel bonding techniques speculum is bonded on the silicon chip, the technological requirement of sol-gel bonding is low, and cost is low, thereby has solved the difficult problem of long wave long micro mechanical adjustable detector.
Especially, one object of the present invention has been to disclose device architecture of the tunable long wavelength's resonant cavity of a kind of low cost detector and preparation method thereof.In this device architecture, the reflectivity of speculum can be up to 99.9% up and down, and can obviously not increase the technology cost.Technology difficulty provided by the invention is relatively low, is fit to industrial production.
A kind of efficient micro-mechanical tunable resonant cavity enhanced detector of the present invention is characterized in that, its structure comprises:
One substrate;
One bonded interface layer, this bonded interface layer is made on the substrate;
One first speculum, this first speculum is made on the bonded interface layer, and this first speculum is in the same place with the substrate good bond by the effect of bonded interface layer;
One epitaxial loayer, this epitaxial loayer are made on first speculum, and this epitaxial loayer is the cavity part of resonant cavity;
One second speculum, this second speculum is made on the epitaxial loayer;
One protective layer, this protective layer are produced on the surface and the side of epitaxial loayer; And
First, second, third electrode is produced on epitaxial loayer and the mechanical tuning part.
Wherein epitaxial loayer includes source region part and mechanical tuning part, and this active area part and the disposable extension of mechanical tuning part generate, and include sacrifice layer in tuning district, form air chamber behind the releasing sacrificial layer, are used for tuning.
Wherein the material of active area is an IV family material, III-V family, II-VI family material or organic substance material are good to the light absorption of L-band 1.3～1.6 μ m.
Wherein the bonded interface layer is that bonding medium annealing back forms, and this layer is good to the photopermeability of L-band 1.3～1.6 μ m.
Wherein first speculum and the used material of second speculum are SiO
2/ Si, Al
2O
3/ Si, SiNxOy/Si.
The manufacture method of a kind of efficient micro-mechanical tunable resonant cavity enhanced detector of the present invention is characterized in that, comprises the steps:
A) at the first substrate growing epitaxial layers;
B) growth first Bragg mirror on epitaxial loayer;
C) coated with adhesive on the epitaxial wafer of second substrate and first Bragg mirror fits together face-to-face;
D) remove first substrate, on second substrate, stay the epitaxial loayer that has speculum;
E) on epitaxial loayer, make the adjustable detector of microcavity then according to the corresponding micromechanics manufacture craft of epitaxial material system; And
F) second Bragg mirror of growing in the above;
Wherein the material of first, second Bragg mirror is SiO
2/ Si, Al
2O
3/ Si, SiNxOy/Si.
Wherein carry out behind the adhesive in the spin coating needing elder generation through 50～150 ℃, 1～30 hour low-temperature bake before next step technology,, need on sample, apply 0.1～3kg/cm during annealing to improve bond strength
2Pressure.
Wherein step e) comprises that twice mask, photoetching, etching form two mesa structures, further carries out mask, photoetching and etching, forms cantilever beam structure, the growth insulating barrier, photoetching also etches electrode hole, and disposable then growth forms first electrode, second electrode and third electrode.
Efficient micro-mechanical tunable resonant cavity enhanced detector that the present invention discloses and preparation method thereof, speculum all adopts SiO up and down in this device architecture
2/ Si material, 5 couples of SiO
2The reflectivity of/Si just can reach 99%, and its material can adopt the growth of PECVD (plasma-enhanced vapour deposition) system, and is with low cost, effectively solved the expensive technology difficult problem of InP/InGaAsP speculum, and technology is simple simultaneously, is fit to industrial production.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the device architecture schematic diagram of conventional micro-mechanical adjustable detector.
Fig. 2 A is the response curve of typical resonant cavity detector system.
Fig. 2 B is the photo (vertical view) of typical micromachine cantilever beam structure.
Fig. 3 A～3I is the manufacture craft flow chart of micro-mechanical tunable resonant cavity detector of the present invention.
Embodiment
See also Fig. 3 I, a kind of efficient micro-mechanical tunable resonant cavity enhanced detector of the present invention is characterized in that, its structure comprises:
One substrate 150;
One bonded interface layer 104, this bonded interface layer 104 is made on the substrate 150, and this bonded interface layer 104 is that bonding medium annealing back forms, and this layer is good to the photopermeability of L-band 1.3～1.6 μ m;
One first speculum 102, this first speculum 102 is made on the bonded interface layer 104, this first speculum 102 is in the same place with substrate 150 good bond by the effect of bonded interface layer 104, and this first speculum 102 and second speculum, 122 used materials are SiO
2/ Si, Al
2O
3/ Si, SiNxOy/Si;
One epitaxial loayer 101, this epitaxial loayer 101 is made on first speculum 102, the cavity part that this epitaxial loayer 101 is resonant cavities, wherein epitaxial loayer 101 includes source region 110 parts and mechanical tuning part 121, there is an air chamber 123 centre of this mechanical tuning part 121, and these active area 110 parts and mechanical tuning part 121 disposable extensions generate, and include sacrifice layer in tuning district, form air chamber 123 behind the releasing sacrificial layer, be used for tuning; The material of this active area 110 is IV family materials, III-V family, II-VI family material or organic substance material are good to the light absorption of L-band 1.3～1.6 μ m;
One second speculum 122, this second speculum 122 is made on the epitaxial loayer 101;
One protective layer 111, this protective layer 111 is produced on the surface and the side of epitaxial loayer 101; And
First, second, third electrode A, B, C are produced on epitaxial loayer 110 and the mechanical tuning part 121.
See also Fig. 3 A～3H, the manufacture method of a kind of efficient micro-mechanical tunable resonant cavity enhanced detector of the present invention is characterized in that, comprises the steps:
A) at first substrate, 100 growing epitaxial layers 101 (Fig. 3 A), it comprises detector active region 110 and mechanical tuning district 121, and wherein the mechanical tuning district comprises sacrifice layer (epitaxial loayers at air chamber 123 places);
B) growth first Bragg mirror 102 (Fig. 3 B) on epitaxial loayer 101;
C) coated with adhesive on the epitaxial wafer 101 of second substrate 150 and first Bragg mirror 102, (Fig. 3 C) face-to-face fits together, needing earlier through 50～150 ℃, 1～30 hour low-temperature bake before next step technology wherein to carry out behind the adhesive in the spin coating, to improve bond strength, need on sample, apply 0.1～3kg/cm during annealing
2Pressure;
D) remove first substrate 100, on second substrate 150, stay the epitaxial loayer 101 (Fig. 3 D) that has speculum;
E) then on epitaxial loayer according to the corresponding manufacture craft of epitaxial material system make two table top detectors (Fig. 3 E, 3F, 3G);
F) second Bragg mirror 122 (Fig. 3 H) of growing in the above; And
G) with the method releasing sacrificial layer of selective corrosion, form air chamber (Fig. 3 I).
Wherein the material of first, second Bragg mirror 102,122 is SiO
2/ Si, Al
2O
3/ Si, SiNxOy/Si.
Comprise in the step e) that wherein twice mask, photoetching, etching form two mesa structures, further carry out mask, photoetching and etching, form cantilever beam structure (Fig. 3 E), the growth insulating barrier, photoetching also etches electrode hole (Fig. 3 F), disposable then growth forms first electrode, second electrode and third electrode (Fig. 3 G).
Fig. 3 A～3I has disclosed the process flow diagram of the given micro-mechanical adjustable detector of Fig. 3 I.At first on first substrate 100 growth detector epitaxial loayer 101 (Fig. 3 A).In best an enforcement, first substrate is the InP substrate, and its epitaxial structure is as follows:
Table 1: the structural representation of epitaxial loayer
| 10 | InP intrinsic layer 100nm | The block layer is used for bonding |
| 9 | InGaAsP (λ g=1.25 μ m) 480nm p mixes | The n electrode layer of detector |
| 8 | InGaAsP (λ g=1.25 μ m) 770nm intrinsic | Wall |
| 7 | InGaAs (λ g～1.63 μ m) 12nm intrinsic | The light absorption district |
| 6 | InGaAsP (λ g=1.25 μ m) 115nm intrinsic | Wall |
| 5 | In0.53Ga0.47As 12nm intrinsic | The light absorption district |
| 4 | InGaAsP (λ g=1.25 μ m) 100nm intrinsic | Wall |
| 3 | InGaAsP (λ g=1.25 μ m) 300nm n mixes | The p electrode layer of detector, also be used for public electrode, apply tuning voltage |
| 2 | InP 800nm intrinsic | Sacrifice layer is used for tuning |
| 1 | InGaAsP (λ g=1.25 μ m) 500nm p mixes | The n electrode layer is used to apply tuning voltage |
| 0 | InP resilient coating and InP substrate |
Delay outward, then on epitaxial loayer with the method growth SiO of PECVD or electron beam evaporation
2Speculum 102 under/Si Prague (Fig. 3 B), in another most preferred embodiment, SiO
2/ Si Al
2O
3/ Si substitutes.Then the Bragg mirror 102 and second substrate 150 are carried out chemical cleaning, silicon latex (sol-gel) 103,151 in the oven dry back spin coating sticks together (Fig. 3 C).The preparation of silicon latex referring to " C.J.Brinker; K.D.Keefer; D.W.Schaefer and C.S.Ashley; " Sol-gel transition in simple silicates; " J.Non-Crystalline Solids, vol.48, pp.47-64,1982 ", perhaps use other similar products.Then heat-treat, 60～150 ℃ of first low temperature baking 3～30 hours being warmed up to 250 ℃ and kept 1～10 hour at a slow speed, further improves bond strength.Generally need apply certain pressure during annealing, to obtain the higher bonded interface of thickness uniform strength.Afterwards, remove first substrate 100 with chemical corrosion or the way that is used mechanical reduction.Staying growth on second substrate 150 has the epitaxial loayer 101 of the speculum of high reflectance.In a most preferred embodiment, first substrate 100 is InP substrates, and second substrate 150 is silicon chips, and the method for removing the InP substrate is to use HCl: H
3PO
4=1: 1 corrosive liquid (room temperature), corrosion rate is approximately 2～3.2 μ m/min.
Use the method for silicon latex bonding, technological requirement is low, need not speculum is carried out polishing before the bonding, and with the method for PECVD or electron beam evaporation growth speculum, compared with using epitaxial device (as molecular beam epitaxial device MBE or the gas phase epitaxy of metal organic compound equipment MOCVD) speculum that growth thickness is bigger, its difficulty and cost all have reduction significantly, thereby have solved the difficult problem that long wavelength's (especially 1.55 mu m wavebands) resonant cavity detector is difficult to make.Then make the micro-mechanical adjustable detector at epitaxial loayer according to common process, concise and to the point step is described below:
Use two step mask and etchings, on epitaxial loayer, etch two mesa structures, shown in Fig. 3 E.According to device function, the epitaxial loayer separated into two parts, detector active region part 110 (following table part) and tuning district 121 (upper table surface part), the active area part mainly comprises the D electrode of detector, intrinsic uptake zone and n electrode district, tuning district mainly comprises two electrode layers and middle sacrifice layer.In a most preferred embodiment, epitaxial layer structure is as shown in table 1, active area 110 comprises in the table 1 the 3rd～10 layer, must guarantee during the etching following table that following table stops at the 9th layer (n electrode layer), to form the good ohmic contact, tuning district 121 mainly comprises the 1st～3 floor in the table 1, and the 3rd layer as public electrode layer, must be parked in the 3rd layer (p electrode layer) during the etching upper table surface, to form the good ohmic contact.Afterwards, further carry out photoetching, etching forms cantilever beam structure, and its vertical view is seen Fig. 2 B.The insulating barrier 111 of then growing, and etch electrode hole and incidence hole, see Fig. 3 F.Use band glue lift-off technology growth electrode afterwards, peel off the back and form electrode A, B, C, electrode B is a common electrode, and electrode A and B are used for the photoelectric current of pick-up probe, and electrode B and C are used to apply tuning voltage, shown in Fig. 3 G.In a most preferred embodiment, electrode adopts Ti/Pt/Au, and its advantage is that adhesiveness is good, and good stability.Then, band glue growth upper reflector 122 (Fig. 3 H).In the present embodiment, upper reflector adopts SiO
2/ Si material makes the method growth of deposited by electron beam evaporation.At last, releasing sacrificial layer (Fig. 3 I).In a most preferred embodiment, epitaxial loayer adopts InP base InGaAsP material, and sacrifice layer adopts the InP material, sees Table in 1 the 2nd layer, and corrosive liquid adopts HCl: H
3PO
4(room temperature).Since then, finish the element manufacturing of detector, dissociate, after the pressure welding, between electrode B and C, apply tuning voltage, between electrode A and B, collect the photoelectric current of detector.The light vertical incidence.
Although the present invention describes by each embodiment, this should just not think that it is all the elements of the present invention or intension.After reading top of the present invention elaborating, undoubtedly, the insider can carry out various replacements and correction to those technology of the present invention.Therefore, the application's criminal record claim can be construed to the institute that is encompassed under original spirit of the present invention and the field changes and revises.
Claims (9)
1, a kind of efficient micro-mechanical tunable resonant cavity enhanced detector is characterized in that, its structure comprises:
One substrate;
One bonded interface layer, this bonded interface layer is made on the substrate;
One first speculum, this first speculum is made on the bonded interface layer, and this first speculum is in the same place with the substrate good bond by the effect of bonded interface layer;
One epitaxial loayer, this epitaxial loayer are made on first speculum, and it comprises detector active region and mechanical tuning district, constitute the cavity part of resonant cavity jointly;
One second speculum, this second speculum is made on the epitaxial loayer;
One protective layer, this protective layer are produced on the surface and the side of epitaxial loayer; And
First, second, third electrode is produced on detector active region part and the mechanical tuning part.
2, efficient micro-mechanical tunable resonant cavity enhanced detector according to claim 1 is characterized in that, wherein in the centre in mechanical tuning district one air chamber is arranged, and is used for tuning.
3, efficient micro-mechanical tunable resonant cavity enhanced detector according to claim 1, it is characterized in that wherein the material of active area is an IV family material, III-V family, II-VI family material or organic substance material are good to the light absorption of L-band 1.3～1.6 μ m.
4, efficient micro-mechanical tunable resonant cavity enhanced detector according to claim 1 is characterized in that, wherein the bonded interface layer is that bonding medium annealing back forms, and this layer is good to the photopermeability of L-band 1.3～1.6 μ m.
5, efficient micro-mechanical tunable resonant cavity enhanced detector according to claim 1 is characterized in that, wherein first speculum and the used material of second speculum are SiO
2/ Si, Al
2O
3/ Si, SiNxOy/Si.
6, a kind of manufacture method of efficient micro-mechanical tunable resonant cavity enhanced detector is characterized in that, comprises the steps:
A) at the first substrate growing epitaxial layers, this epitaxial loayer comprises detector active region and tuning district, and tuning district comprises sacrifice layer;
B) growth first Bragg mirror on epitaxial loayer;
C) coated with adhesive on the epitaxial wafer of second substrate and first Bragg mirror fits together face-to-face;
D) remove first substrate, on second substrate, stay the epitaxial loayer that has speculum;
E) on epitaxial loayer, make two table top detectors, form cantilever beam structure according to the corresponding manufacture craft of epitaxial material system;
F) second Bragg mirror of growing in the above; And
G) with the method releasing sacrificial layer of selective corrosion, form air chamber.
7, the manufacture method of efficient micro-mechanical tunable resonant cavity enhanced detector according to claim 6 is characterized in that, wherein the material of first, second Bragg mirror is SiO
2/ Si, Al
2O
3/ Si, SiNxOy/Si.
8, the manufacture method of efficient micro-mechanical tunable resonant cavity enhanced detector according to claim 6, it is characterized in that, needing earlier through 50～150 ℃, 1～30 hour low-temperature bake before next step technology wherein to carry out behind the adhesive in the spin coating, to improve bond strength, need on sample, apply 0.1～3kg/cm during annealing
2Pressure.
9, the manufacture method of efficient micro-mechanical tunable resonant cavity enhanced detection according to claim 6, it is characterized in that, wherein step e) comprises that twice mask, photoetching, etching form two mesa structures, further carry out mask, photoetching and etching, form cantilever beam structure, the growth insulating barrier, photoetching also etches electrode hole, disposable then growth forms first electrode, second electrode and third electrode.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106935681A (en) * | 2017-01-23 | 2017-07-07 | 中国科学院西安光学精密机械研究所 | A kind of preparation method of the complete ultrafast photo-detector of light solid-state |
| CN108333679A (en) * | 2018-02-11 | 2018-07-27 | 南京邮电大学 | Silicon substrate gaN series photon chip and preparation method towards blue light visible light communication |
| CN109473488A (en) * | 2017-09-07 | 2019-03-15 | 中国科学院物理研究所 | It can be seen that blind UV detector and preparation method thereof |
| CN110223913A (en) * | 2019-06-03 | 2019-09-10 | 云南大学 | A method of removal InP semiconductive material substrate |
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2005
- 2005-01-27 CN CN 200510006264 patent/CN1812303A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935681A (en) * | 2017-01-23 | 2017-07-07 | 中国科学院西安光学精密机械研究所 | A kind of preparation method of the complete ultrafast photo-detector of light solid-state |
| CN109473488A (en) * | 2017-09-07 | 2019-03-15 | 中国科学院物理研究所 | It can be seen that blind UV detector and preparation method thereof |
| CN109473488B (en) * | 2017-09-07 | 2020-05-12 | 中国科学院物理研究所 | Visible blind ultraviolet detector and preparation method thereof |
| CN108333679A (en) * | 2018-02-11 | 2018-07-27 | 南京邮电大学 | Silicon substrate gaN series photon chip and preparation method towards blue light visible light communication |
| CN108333679B (en) * | 2018-02-11 | 2020-04-21 | 南京邮电大学 | Silicon-based GaN photonic chip for blue light visible light communication and preparation method thereof |
| CN110223913A (en) * | 2019-06-03 | 2019-09-10 | 云南大学 | A method of removal InP semiconductive material substrate |
| CN112582880A (en) * | 2020-12-11 | 2021-03-30 | 睿创微纳(无锡)技术有限公司 | Infrared detector |
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