CN108333679A - Silicon substrate gaN series photon chip and preparation method towards blue light visible light communication - Google Patents
Silicon substrate gaN series photon chip and preparation method towards blue light visible light communication Download PDFInfo
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- CN108333679A CN108333679A CN201810144374.9A CN201810144374A CN108333679A CN 108333679 A CN108333679 A CN 108333679A CN 201810144374 A CN201810144374 A CN 201810144374A CN 108333679 A CN108333679 A CN 108333679A
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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Abstract
The invention discloses a kind of silicon substrate gaN series photon chips and preparation method towards blue light visible light communication, realization carrier is the silicon substrate nitride wafers with low-refraction covering, silicon substrate nitride wafers include silicon substrate layer and the top layer nitride with low-refraction covering above silicon substrate layer, and nano optical wave guide, splitter, resonant ring, coupling grating and the ni au electrode for energization are provided on top layer nitride.The present invention is small, the integration with height, can be applied to the fields such as photon calculating and visible light communication, promotes blue wave band visible light communication technology in various performance indicators such as the rate of information throughput, information processing rate and terminal part integrated levels.
Description
Technical field
The present invention relates to silicon substrate gaN series photon chips and preparation method towards blue light visible light communication, belong to information material
Material and device arts.
Background technology
Visible light communication is the wireless light communication technology to be grown up based on LED component, utilizes its Output optical power and drive
The high-speed response characteristic of streaming current realizes wireless communication using visible light as information carrier.Visible light communication technology green is low
Near-zero energy consumption communication can be achieved in carbon, also can effectively avoid the weakness such as radio communication electromagnetic signal leakage, and rapid build is anti-dry
It disturbs, the security information space of anti-intercepting and capturing.In the spectral range of visible light, blue wave band has shorter wavelength and broader light
Compose frequency range.
Currently, another big bottleneck for restricting the application of visible light wireless communication technique is the small of sending and receiving end and signal processing module
Type and micromation.Monolithic integrated LED light source and and photoelectric sensor, in conjunction with embedded processing systems, can be visible light without
Line communication miniaturization sending and receiving end, provides an effective solution scheme.Meanwhile LED component can be regulated and controled by photonic device
It is emitted spectrum, increases the spectrum utilization efficiency of visible light wireless communication, by signal processing technology, further increases the property of system
Energy.In conclusion the visible light communication technology in face of continuing to develop needs exploitation to provide the integration requirement of core terminal device
There is the active blue-ray LED photon chip of high response speed, the micromation with photonic signal processing function.
Invention content
Technical problem：A kind of promotion blue wave band visible light communication technology of present invention offer is in the rate of information throughput, information
The silicon substrate gaN series photon towards blue light visible light communication of various performance indicators such as processing speed and terminal part integrated level
Chip and preparation method.
Technical solution：The silicon substrate gaN series photon chip towards blue light visible light communication of the present invention, to carry low-refraction
The silicon substrate nitride wafers of covering are carrier, including silicon substrate nitride crystalline silicon substrate layer, top nitride layer, setting are in institute
State the resonant ring in top nitride layer, nano optical wave guide, coupling grating, splitter, have the function of emit blue light optical signal and
The difunctional photoelectric device for detecting blue light optical signal function, be correspondingly arranged around the resonant ring multiple difunctional photoelectric devices and
The both ends of multiple nano optical wave guides, one of straight line nano optical wave guide are connected respectively a difunctional photoelectric device, together
When connected respectively with a corresponding coupling grating by a splitter, remaining nanometer optical wave directive/guide one end and resonant ring pair
It should be arranged, the other end is correspondingly connected with a difunctional photoelectric device, while being coupled with corresponding one by a splitter
Grating connects, and each difunctional photoelectric device includes positive electrode, negative electrode and the top layer nitride between positive and negative electrode
Layer, the difunctional photoelectric device are connected with one end of nano optical wave guide in the horizontal direction.Top nitride layer include by
Up to the p-type GaN layer of lower setting, active layer, low-refraction covering and N-type GaN layer, the resonant ring, nano optical wave guide, coupling
Grating, splitter are to be etched to N-type GaN layer from top to bottom, and the positive and negative anodes are arranged in p-type GaN layer upper surface, and negative electrode is set
It sets on the N-type GaN layer upper surface exposed after etching.
Further, in integrated chip of the present invention, positive electrode and negative electrode are ni au electrode.
Further, in integrated chip of the present invention, the ingredient of low-refraction covering is AlGaN, the light of low-refraction covering
Refractive index is learned less than p-type GaN layer, the light refractive index of active layer and N-type GaN layer.
Further, in integrated chip of the present invention, blue light optical signal is limited in top nitride layer by low-refraction covering
It is inside transmitted and handles, realize the integreted phontonics core with strong photon restriction effect and good light propagation modulating characteristic
Piece.
Further, in integrated chip of the present invention, nano optical wave guide and splitter are used for transmission and detach blue light optical signal；
Resonant ring is used to adjust the frequency characteristic of blue light optical signal, realizes wavelength-division multiplex；Coupling grating is for introducing blue light optical signal
It is monitored in external spectrometer.
The integrated chip of the present invention is carved by electron beam lithography, optical lithography and three or five groups of reactive ions in the horizontal direction
The top nitride layer is passed through nano optical wave guide, splitter, resonant ring and the coupling grating of processing sets up by the modes such as erosion,
LED blue light emitting devices are constituted with the top layer nitride and ni au electrode and suitable for the difunctional phototube of blue wave band
Part is correspondingly arranged in the horizontal direction, and the chip-scale for forming transmitting-receiving with the processing of blue light optical signal is integrated.
The preparation method of the silicon substrate gaN series photon chip towards blue light visible light communication of the present invention, includes the following steps：
Step (1) carries out electron beam lithography in the top layer nitride upper surface of silicon substrate nitride wafers and defines nanometer optical wave
It leads, the graphic structure of splitter, resonant ring, coupling grating, difunctional photoelectric device, and uses electron beam evaporation technique deposition chromium
Metal layer；
Step (2) is golden to being vaporized on the chromium on electron beam resist surface in being cleaned by ultrasonic environment using organic solvents-acetone
Belong to layer to be removed, obtains the chromium metal layer with graphic structure；
Step (3) uses three-five material reactive ion etching technology, using the chromium metal layer as hardmask, carves
The top layer nitride of silicon substrate nitride wafers is lost to N-type GaN layer, obtains nano optical wave guide, splitter, resonant ring, coupling light
The structure of grid, difunctional photoelectric device；
Step (4) carries out optical lithography in the top layer nitride upper surface of silicon substrate nitride wafers, defines difunctional light
The graphic structure of the positive and negative electrode of electrical part, and ni au complex metal layer is deposited using electron beam evaporation technique；
Step (5) is compound to being vaporized on the ni au on photoresist surface in being cleaned by ultrasonic environment using organic solvents-acetone
Metal layer is removed, and double positive and negative electrodes for attacking photoelectric device are obtained.
Further, in preparation method of the present invention, silicon substrate nitride wafers include silicon substrate layer, top nitride layer,
The top nitride layer includes the p-type GaN layer being from top to bottom arranged, active layer, low-refraction covering and N-type GaN layer.
Further, in preparation method of the present invention, step is etched in (3) by following means：It is reacted using in three-five
The high etching selection ratio of chromium metal layer and top layer nitride is being pushed up using chromium metal layer as hardmask during ion etching
The etching depth that 2 microns to 5 microns are obtained on layer nitride, by nano optical wave guide, splitter, resonant ring, coupling grating, double work(
The structure of energy photoelectric device is etched to N-type GaN layer.
As third generation semiconductor, gallium nitride material possesses excellent photoelectric properties.The energy gap of GaN material is
3.4eV can form ternary or quaternary solid solution alloy with InN (energy gap 1.9eV) AIN (energy gap 6.2eV)
System, corresponding direct band gap wavelength can be used for the manufacture and exploitation of blue photons chip.The present invention propose it is a kind of towards
The silicon substrate gaN series photon chip of blue light visible light communication contributes in conjunction with the excellent photoelectric characteristic of silicon substrate gaN series material and advanced
Micro-nano processing technology, promoted blue wave band visible light communication technology in the rate of information throughput, information processing rate and terminal
Various performance indicators such as device integration.
In integrated chip of the present invention, top layer nitride and ni au electrode constitute LED blue light emitting devices and are suitable for blue light
The difunctional photoelectric device of wave band, for generating and receiving blue light optical signal, nano optical wave guide and splitter are used for transmission and divide
From blue light optical signal；Resonant ring is used to adjust the frequency characteristic of blue light optical signal, realizes wavelength-division multiplex；Coupling grating is used for will be blue
Light optical signal is introduced into external spectrometer and is monitored.The present invention is small, and the integration with height can be applied to photon
The fields such as calculating and visible light communication promote blue wave band visible light communication technology in the rate of information throughput, information processing rate
With various performance indicators such as terminal part integrated level.
Advantageous effect：Compared with prior art, the present invention haing the following advantages：
Common its modulation bandwidth of commercialization white LED light source only has several megahertzs in visible light communication at present, and by property
Can optimization blue light LED light source its be adjusted to bandwidth and reach as high as hundreds of megahertzs.Simultaneously as signal processing module still relies on
Electronic chip, which greatly limits the further development of visible light communication, the quantum size limitation of electronic device and
Power problems also become the bottleneck of visible light communication field sustainable development.Photon chip can be used for the following ultrahigh speed communication and fortune
The main information processing apparatus of calculation can greatly improve data transmission and arithmetic speed in visible light communication technology.
And current photon chip is mostly based on the passive optical signal of photon chip of the SOI Substrate towards 1.55 μm of telecommunications optical bands
Processing apparatus, although they already have basic optical signal prosessing ability, SOI Substrate is as passive substrate, optical signal
It needs to be generated by external light source, and is coupled into photon chip by fibre system, same optical signal is converted into electric signal and also needs
It wants external photoelectric sensor to be handled, considerably increases the volume and cost of entire optical communication system.Simultaneously because silicon substrate
The wave band of the limitation of material energy gap, accessible optical signal is also limited to infrared band or more, can not handle wavelength
Smaller, the visible light signal of signal bandwidth bigger.
The present invention utilizes the silicon substrate nitride wafers with low-refraction covering, in a highly integrated manner in top layer nitrogen
It is synchronous in compound to prepare the blue-ray LED device as visible light signal light source, it will be seen that optical signal is converted to double work(of electric signal
Energy photoelectric device and nano optical wave guide, splitter, resonant ring and the coupling grating for being used for transmission and handling visible light signal.Nanometer
Optical waveguide and splitter are used for transmission and detach blue light optical signal；Resonant ring is used to adjust the frequency characteristic of blue light optical signal, real
Existing wavelength-division multiplex；Coupling grating is used to blue light optical signal being introduced into external spectrometer and be monitored.Meanwhile low-refraction packet
Layer can will be seen that being limited in top layer nitride for optical signal is handled and transmitted, and realizing has strong photon restriction effect
With the blue light active photonic integrated chip of good light propagation modulating characteristic.Using LED component excitation there is high bandwidth height to respond
The blue light optical signal of speed；Blue light optical signal is transmitted in nano optical wave guide, and using micro-ring resonator, splitter etc. is passive
Photonic device regulates and controls the optical characteristics such as the spectrum of blue light optical signal, frequency response characteristic and transmission form, utilizes coupling
Blue light optical signal is introduced into external spectrometer and is monitored by grating, will be blue finally by single chip integrated photoelectric sensor
Light optical signal is converted into electric signal, obtains the high-performance active photonic towards blue wave band visible light communication under wavelength-division multiplex technique
Integrated chip.Present invention can apply to the fields such as photon calculating and visible light communication, promote blue wave band visible light communication technology
In various performance indicators such as the rate of information throughput, information processing rate and terminal part integrated levels.
Description of the drawings
Fig. 1 is the schematic top plan view of the silicon substrate gaN series photon chip towards blue light visible light communication；
Fig. 2 is the cross-sectional view of the silicon substrate gaN series photon chip towards blue light visible light communication；
Fig. 3 is the preparation process flow of the silicon substrate gaN series photon chip towards blue light visible light communication；
Fig. 4 is the test system schematic of the silicon substrate gaN series photon chip towards blue light visible light communication.
Have in figure：P-type GaN layer 1, active layer 2, low-refraction covering 3, N-type GaN layer 4, resonant ring 5, nano optical wave guide 6,
Coupling grating 7, splitter 8, difunctional photoelectric device 9, positive electrode 10, negative electrode 11.
Specific implementation mode
Technical scheme of the present invention is described in further detail below in conjunction with the accompanying drawings：
As shown in Figure 1, the silicon substrate gaN series photon chip towards blue light visible light communication of the present invention, realization carrier is silicon
Underlayer nitriding object chip, the silicon substrate nitride wafers include carrying the top layer nitride of low-refraction covering and positioned at top layer
The silicon substrate layer of nitride lower part.It is provided with low-refraction packet below the active layer of the top layer nitride of silicon substrate nitride wafers
Layer, low-refraction covering lower section are provided with N-type GaN layer；Have for generating in the top layer nitride of silicon substrate nitride wafers
With the active photonic device for receiving blue light optical signal, LED blue light emitting devices and difunctional photoelectric device；Silicon substrate nitride is brilliant
There is the passive photonic device for being used for transmission and handling blue light optical signal in the top layer nitride of piece, nano optical wave guide, splitter,
Resonant ring and coupling grating etc..
The present invention will be upper by three-five reactive ion etching to N-type GaN layer using chromium metal layer as hardmask
It states active and passive photonic device fabrication to be arranged in low-refraction covering and active layer, using low-refraction covering by blue light light
Signal, which is limited in active layer, to be transmitted and handles.Chromium metal layer and top layer are utilized during three-five reactive ion etching
The high etching selection ratio of nitride under the etching speed of 100 nm/minutes, carries out 20 using chromium metal layer as hardmask
Minute etching obtains 2 microns of etching depth on top layer nitride, is etched to N-type GaN layer.As claimed in claim 8,
The high etching selection ratio that chromium metal layer and top layer nitride are utilized during three-five reactive ion etching, is made with chromium metal layer
Under the etching speed of 100 nm/minutes etch within 35 minutes for hardmask, it is micro- that 3.5 are obtained on top layer nitride
The etching depth of rice, is etched to N-type GaN layer.As claimed in claim 8, it is utilized during three-five reactive ion etching
The high etching selection ratio of chromium metal layer and top layer nitride, using chromium metal layer as hardmask, at the quarter of 100 nm/minutes
It loses under speed, etch within 50 minutes, 5 microns of etching depth is obtained on top layer nitride, is etched to N-type GaN layer.Having
In body application scenarios, blue light optical signal of the LED component excitation with high bandwidth high response speed is utilized；Blue light optical signal is in nanometer
It is transmitted in optical waveguide, using micro-ring resonator, spectrum of the passive photonics such as the optical branching device device to blue light optical signal, frequency
The optical characteristics such as response characteristic and transmission form are regulated and controled, using coupling grating by blue light optical signal introduce outside spectrometer
In be monitored, finally by single chip integrated photoelectric sensor, convert blue light optical signal to electric signal, obtain wavelength-division multiplex
High-performance active photonic integrated chip towards blue wave band visible light communication under technology.
A kind of optimization structure as the present invention：The silicon substrate gaN series photon chip towards blue light visible light communication
Blue light optical signal launch end is LED component, and blue light optical signal is transmitted in nano optical wave guide, using micro-ring resonator, is divided
The passive photonics such as road device device adjusts the optical characteristics such as the spectrum of blue light optical signal, frequency response characteristic and transmission form
Blue light optical signal is introduced into external spectrometer using coupling grating and is monitored, finally by single chip integrated photoelectricity by control
Sensor converts blue light optical signal to electric signal, obtains the height towards blue wave band visible light communication under wavelength-division multiplex technique
Performance active photonic integrated chip.Using manufacturing process such as electron beam lithography, crome metal hardmask and III-V etching technologies,
Nano optical wave guide, splitter, resonant ring and the coupling grating that the top nitride layer is passed through to processing sets up, with the top layer
Nitride and ni au electrode constitute LED blue light emitting devices and difunctional photoelectric device suitable for blue wave band in level side
It is connected with each other upwards, realizes that the chip-scale of the transmitting-receiving and processing to blue light optical signal is integrated.
The silicon substrate gaN series photon chip application range towards blue light visible light communication designed by the present invention, such as：
Using the high bandwidth high response speed characteristic for the blue light optical signal that LED component generates, can be used in photon calculating
The integrated form application of acquisition and processing occurs for signal, realizes high operation frequency, and energy consumption is very low, does not need complicated heat dissipation
Device.It can be applied to high speed visible light communication field simultaneously and will be seen that transmitting, reception, transmission and the processing procedure of optical signal carry out
One chip is integrated, promotes blue wave band visible light communication technology in the rate of information throughput, information processing rate and terminal part collection
At various performance indicators such as degree.
A kind of preparation method of the silicon substrate gaN series photon chip towards blue light visible light communication has also been devised in the present invention, packet
Include following specific steps：
Step (1) carries out electron beam lithography in the top layer nitride upper surface of silicon substrate nitride wafers and defines nanometer optical wave
It leads, the graphic structure of splitter, resonant ring, coupling grating, LED blue light emitting devices and difunctional photoelectric device, and using electricity
Beamlet evaporation coating technique deposition chromium metal layer；
Step (2) is removed using organic solvents-acetone in being cleaned by ultrasonic environment, is obtained brilliant in silicon substrate nitride
Etching nano optical wave guide in the top layer nitride of piece, splitter, resonant ring, coupling grating, LED blue light emitting devices and difunctional
When optoelectronic device structure, it is used as the chromium metal layer with graphic structure of hardmask；
Step (3) uses three-five material reactive ion etching technology, using chromium metal layer as hardmask, etches silicon
The top layer nitride of underlayer nitriding object chip is to N-type GaN layer；
Step (4) carries out optical lithography in the top layer nitride upper surface of silicon substrate nitride wafers, defines LED blue lights hair
The graphic structure of the positive and negative electrode of optical device and difunctional photoelectric device, and it is compound using electron beam evaporation technique deposition ni au
Metal layer；
Step (5) is removed using organic solvents-acetone in being cleaned by ultrasonic environment, obtain LED blue light emitting devices and
The positive and negative electrode of difunctional photoelectric device.
Above-described embodiment is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill of the art
For personnel, without departing from the principle of the present invention, several improvement and equivalent replacement can also be made, these are to the present invention
Claim be improved with the technical solution after equivalent replacement, each fall within protection scope of the present invention.
Claims (8)
1. a kind of silicon substrate gaN series photon chip towards blue light visible light communication, which is characterized in that the integrated chip is low to carry
The silicon substrate nitride wafers of refractive index covering (3) are carrier, including silicon substrate layer, top nitride layer, setting are on the top
Layer nitride layer in resonant ring (5), nano optical wave guide (6), coupling grating (7), splitter (8), have transmitting blue light light letter
The difunctional photoelectric device (9) of number function and detection blue light optical signal function is correspondingly arranged around the resonant ring (5) multiple double
Function photoelectric device (9) and multiple nano optical wave guides (6), the both ends of one of straight line nano optical wave guide (6) are corresponding respectively to be connected
A difunctional photoelectric device (9) is connect, while being connected respectively with a corresponding coupling grating (7) by a splitter (8),
Then one end is correspondingly arranged remaining nano optical wave guide (6) with resonant ring (5), and the other end and a difunctional photoelectric device (9) are right
It should connect, while be connected with a corresponding coupling grating (7) by a splitter (8), each difunctional photoelectric device (9)
Include positive electrode (10), negative electrode (11) and the top nitride layer between positive and negative electrode, the difunctional phototube
Part is connected with one end of nano optical wave guide (6) in the horizontal direction；
The top nitride layer include the p-type GaN layer (1) being from top to bottom arranged, active layer (2), low-refraction covering (3) and
N-type GaN layer (4), the resonant ring (5), nano optical wave guide (6), coupling grating (7), splitter (8) are to etch from top to bottom
To N-type GaN layer (4), positive and negative anodes (10) setting is revealed after etching in p-type GaN layer (1) upper surface, negative electrode (11) setting
On N-type GaN layer (4) upper surface gone out.
2. the silicon substrate gaN series photon chip according to claim 1 towards blue light visible light communication, which is characterized in that institute
It is ni au electrode to state positive electrode (10) and negative electrode (11).
3. the silicon substrate gaN series photon chip according to claim 1 towards blue light visible light communication, which is characterized in that institute
The ingredient for stating low-refraction covering (3) is A1GaN, and the light refractive index of low-refraction covering (3) is less than p-type GaN layer (1), has
The light refractive index of active layer (2) and N-type GaN layer (4).
4. the silicon substrate gaN series photon chip according to claim 3 towards blue light visible light communication, which is characterized in that institute
State low-refraction covering (3) blue light optical signal be limited in top nitride layer and be transmitted and handle, realize have it is strong
The photon integrated chip of photon restriction effect and good light propagation modulating characteristic.
5. the silicon substrate gaN series photon chip according to claim 1,2,3 or 4 towards blue light visible light communication, feature
It is, the nano optical wave guide (6) and splitter (8) are used for transmission and detach blue light optical signal；Resonant ring (5) is for adjusting indigo plant
The frequency characteristic of light optical signal realizes wavelength-division multiplex；Coupling grating (7) is used to blue light optical signal being introduced into external spectrometer
It is monitored.
6. a kind of preparation method of the silicon substrate gaN series photon chip towards blue light visible light communication, which is characterized in that this method packet
Include following steps：
Step (1) carries out electron beam lithography in the top layer nitride upper surface of silicon substrate nitride wafers and defines nano optical wave guide
(6), the graphic structure of splitter (8), resonant ring (5), coupling grating (7), difunctional photoelectric device (9), and use electron beam
Evaporation coating technique deposition chromium metal layer；
Step (2) is using organic solvents-acetone to being vaporized on the chromium metal layer on electron beam resist surface in being cleaned by ultrasonic environment
It is removed, obtains the chromium metal layer with graphic structure；
Step (3) uses three-five material reactive ion etching technology, using the chromium metal layer as hardmask, etches silicon
The top layer nitride of underlayer nitriding object chip obtains nano optical wave guide (6), splitter (8), resonant ring to N-type GaN layer (4)
(5), the structure of coupling grating (7), difunctional photoelectric device (9)；
Step (4) carries out optical lithography in the top layer nitride upper surface of silicon substrate nitride wafers, defines difunctional phototube
The graphic structure of the positive and negative electrode of part (9), and ni au complex metal layer is deposited using electron beam evaporation technique；
Step (5) is using organic solvents-acetone to being vaporized on the ni au composition metal on photoresist surface in being cleaned by ultrasonic environment
Layer is removed, and double positive electrodes (10) and negative electrode (11) for attacking photoelectric device are obtained.
7. the preparation method of the silicon substrate gaN series photon chip according to claim 6 towards blue light visible light communication, special
Sign is that the silicon substrate nitride wafers include silicon substrate layer, top nitride layer, and the top nitride layer includes by upper
To the p-type GaN layer (1) of lower setting, active layer (2), low-refraction covering (3) and N-type GaN layer (4).
8. the preparation method of the silicon substrate gaN series photon chip according to claim 7 towards blue light visible light communication, special
Sign is, is etched by following means in the step (3)：Using during three-five reactive ion etching chromium metal layer and
The high etching selection ratio of top layer nitride, using chromium metal layer as hardmask, 2 microns to 5 of acquisition is micro- on top layer nitride
The etching depth of rice, by nano optical wave guide (6), splitter (8), resonant ring (5), coupling grating (7), difunctional photoelectric device
(9) structure is etched to N-type GaN layer (4).
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| CN114975649A (en) * | 2022-05-11 | 2022-08-30 | 南京邮电大学 | Silicon substrate gallium nitride photonic integrated chip for environmental perception and manufacturing method thereof |
| CN116449631A (en) * | 2023-06-15 | 2023-07-18 | 国科大杭州高等研究院 | Multi-waveguide integrated logic gate device, photoelectric device and preparation method thereof |
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| CN102540505A (en) * | 2012-01-13 | 2012-07-04 | 中国科学院半导体研究所 | SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling |
| CN107111060A (en) * | 2014-07-14 | 2017-08-29 | 拜奥德光电公司 | With the 3D integreted phontonics of optical coupling element |
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| CN116449631A (en) * | 2023-06-15 | 2023-07-18 | 国科大杭州高等研究院 | Multi-waveguide integrated logic gate device, photoelectric device and preparation method thereof |
| CN116449631B (en) * | 2023-06-15 | 2023-11-03 | 国科大杭州高等研究院 | Multi-waveguide integrated logic gate device, photoelectric device and preparation method thereof |
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