CN111739881B - Visible light receiving and transmitting integrated device based on MEMS thermopile and manufacturing method thereof - Google Patents
Visible light receiving and transmitting integrated device based on MEMS thermopile and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a visible light receiving and transmitting integrated device based on an MEMS (micro-electromechanical system) thermopile and a manufacturing method thereof, wherein the device comprises a substrate, a buffer layer, a multi-quantum well diode and the thermopile, wherein a first cavity is arranged in the substrate; a second cavity is arranged in the buffer layer; the middle region of the N-type GaN structure layer of the multi-quantum well diode is suspended above the second cavity, and the multi-quantum well structure layer and the P-type GaN structure layer are positioned above the middle region of the N-type GaN structure layer; the thermopile is distributed around the multiple quantum well diode and comprises a plurality of thermocouples which are connected in series, wherein each thermocouple comprises an N-type GaN semiconductor arm and a metal arm. The invention can simultaneously realize two functions of light emission and light detection by using a multi-quantum well diode structure, thereby improving the integration level of devices and reducing the power consumption and the cost of a system. The invention adopts the monolithic integrated MEMS thermopile to control the working temperature of the multi-quantum well diode, reduces the volume compared with the off-chip packaging scheme, and can realize the local temperature regulation and control of the chip.
Description
Technical Field
The invention belongs to the technical field of photonic integration, and relates to a visible light transceiving integrated device based on an MEMS (micro-electromechanical system) thermopile and a manufacturing method thereof.
Background
The photonic integration technology (PIC) integrates optical or photoelectric devices with different functions on the same substrate, has the remarkable advantages of small volume, light weight, low energy consumption cost, excellent performance, high reliability and the like, can effectively solve the problems of communication capacity shortage and energy consumption surge in the internet of things and wireless communication networks, and has become a research hotspot in the field of optical communication and a technical direction of future strategic development at present. The optical transmitter and the optical receiver are indispensable components of the internet of things and a wireless communication network, monolithic integration of the optical transmitter and the optical receiver is one of the difficulties that a Photonic Integrated Circuit (PIC) needs to overcome, compatibility of different device structures and process technologies needs to be solved, and materials meeting performance requirements of the two devices need to be selected.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a visible light transceiving integrated device based on a MEMS thermopile and a method for manufacturing the same, which are used to solve the problem that it is difficult to achieve good monolithic integration of an optical transmitter and an optical receiver in the prior art.
To achieve the above and other related objects, the present invention provides a visible light transceiving integrated device based on a MEMS thermopile, comprising:
the device comprises a substrate, a first cavity and a second cavity, wherein the first cavity penetrates through the substrate up and down;
the buffer layer is positioned on the substrate and covers the first cavity, a second cavity penetrating through the buffer layer from top to bottom is arranged in the buffer layer, the second cavity is communicated with the first cavity, and the opening area of the second cavity is smaller than that of the first cavity;
the multiple quantum well diode is positioned on the buffer layer and covers the second cavity, the multiple quantum well diode sequentially comprises an N-type GaN structure layer, a multiple quantum well structure layer and a P-type GaN structure layer from bottom to top, wherein the edge region of the N-type GaN structure layer is connected with the buffer layer, the middle region of the N-type GaN structure layer is suspended above the second cavity, the multiple quantum well structure layer and the P-type GaN structure layer are positioned above the middle region of the N-type GaN structure layer, a positive electrode is arranged on the P-type GaN structure layer, and a negative electrode is arranged on the edge region of the N-type GaN structure layer;
the thermoelectric pile is positioned on the buffer layer and distributed around the multiple quantum well diodes, the thermoelectric pile comprises a plurality of thermocouples which are sequentially connected in series, each thermocouple comprises an N-type GaN semiconductor arm and a metal arm, the N-type GaN semiconductor arm and the metal arm of the same thermocouple are connected through hot end interconnection metal, two adjacent thermocouples are connected in series through cold end interconnection metal, and the distance between the cold end interconnection metal and the multiple quantum well diodes is larger than the distance between the hot end interconnection metal and the multiple quantum well diodes.
Optionally, one end of the N-type GaN semiconductor arm and the end of the metal arm connected to the hot-end interconnection metal are suspended above the first cavity, and one end of the N-type GaN semiconductor arm and the end of the metal arm connected to the cold-end interconnection metal extend horizontally out of the first cavity in a direction away from the multiple quantum well diode.
Optionally, a concave cavity is formed in the lower surface of the N-type GaN structure layer, and the concave cavity faces the second cavity.
Optionally, the visible light transceiving integrated device further includes a heat sink metal, the heat sink metal is located on the buffer layer, and a distance between the heat sink metal and the multiple quantum well diode is greater than a distance between the cold junction interconnection metal and the multiple quantum well diode.
Optionally, the visible light transceiving integrated device further includes a thermopile anode and a thermopile cathode, the thermopile anode and the thermopile cathode are located on the buffer layer, wherein the thermopile anode is connected to the metal arm of the thermocouple located at the head end of the thermopile, and the thermopile cathode is connected to the N-type GaN semiconductor arm of the thermocouple located at the tail end of the thermopile.
Optionally, the thermopiles are circumferentially distributed around the multiple quantum well diode, and a circumferential angle range is greater than 270 °.
Optionally, at least one cross-section of the multiple quantum well diode is circular or rectangular.
Optionally, the MQW layer comprises an InGaN/GaN stack, the material of the positive electrode comprises any one of a Ni/Au stack, a Pt/Au stack, a Ni/Pt/Au stack and an Au/Mg/Au stack, and the material of the negative electrode comprises any one of a Ti/Al stack, a Ti/Al/Ti/Au stack and a Ti/Al/Ni/Au stack.
The invention also provides a manufacturing method of the visible light transceiving integrated device based on the MEMS thermopile, which comprises the following steps:
providing a substrate, wherein a buffer layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer are sequentially arranged on the upper surface of the substrate from bottom to top;
imaging the P-type GaN layer and the multi-quantum well layer to obtain a multi-quantum well structure layer and a P-type GaN structure layer;
patterning the N-type GaN layer to obtain an N-type GaN structure layer and a plurality of N-type GaN semiconductor arms;
forming a positive electrode on the P-type GaN structure layer;
forming a negative electrode, a plurality of metal arms, a plurality of hot-end interconnect metals, and a plurality of cold-end interconnect metals;
forming a first cavity in the substrate, wherein the first cavity penetrates through the substrate up and down;
forming a second cavity in the buffer layer, wherein the second cavity penetrates through the buffer layer from top to bottom and is communicated with the first cavity, and the opening area of the second cavity is smaller than that of the first cavity;
wherein:
the N-type GaN structure layer, the multiple quantum well structure layer and the P-type GaN structure layer are used as components of a multiple quantum well diode, the edge region of the N-type GaN structure layer is connected with the buffer layer, the middle region of the N-type GaN structure layer is suspended above the second cavity, the multiple quantum well structure layer and the P-type GaN structure layer are located above the middle region of the N-type GaN structure layer, and the negative electrode is located on the edge region of the N-type GaN structure layer;
the plurality of N-type GaN semiconductor arms and the plurality of metal arms are used as components of a thermopile, the thermopile is positioned on the buffer layer and distributed around the multiple quantum well diode, the thermopile comprises a plurality of thermocouples which are sequentially connected in series, each thermocouple comprises an N-type GaN semiconductor arm and a metal arm, the N-type GaN semiconductor arm and the metal arm of the same thermocouple are connected through the hot end interconnection metal, two adjacent thermocouples are connected in series through the cold end interconnection metal, and the distance between the cold end interconnection metal and the multiple quantum well diode is greater than the distance between the hot end interconnection metal and the multiple quantum well diode.
Optionally, one end of the N-type GaN semiconductor arm and the end of the metal arm connected to the hot-end interconnection metal are suspended above the first cavity, and one end of the N-type GaN semiconductor arm and the end of the metal arm connected to the cold-end interconnection metal extend horizontally out of the first cavity in a direction away from the multiple quantum well diode.
Optionally, the method further includes a step of forming a cavity on a lower surface of the N-type GaN structure layer, where the cavity faces the second cavity.
Optionally, a heat sink is formed on the buffer layer while the positive electrode is formed, and a distance between the heat sink metal and the multiple quantum well diode is greater than a distance between the cold junction interconnection metal and the multiple quantum well diode.
Optionally, a thermopile anode and a thermopile cathode are formed on the buffer layer simultaneously with the formation of the metal arm, wherein the thermopile anode is connected to the metal arm of the thermocouple located at the head end of the thermopile, and the thermopile cathode is connected to the N-type GaN semiconductor arm of the thermocouple located at the tail end of the thermopile.
Optionally, the thermopiles are circumferentially distributed around the multiple quantum well diode, and a circumferential angle range is greater than 270 °.
Optionally, at least one cross-section of the multiple quantum well diode is circular or rectangular.
Optionally, the MQW layer comprises an InGaN/GaN stack, the material of the positive electrode comprises any one of a Ni/Au stack, a Pt/Au stack, a Ni/Pt/Au stack and an Au/Mg/Au stack, and the material of the negative electrode comprises any one of a Ti/Al stack, a Ti/Al/Ti/Au stack and a Ti/Al/Ni/Au stack.
As described above, the visible light transceiving integrated device based on the MEMS thermopile and the manufacturing method thereof simultaneously realize two functions of light emission and light detection by utilizing a multi-quantum well diode structure, greatly improve the integration level of the photonic device, and are beneficial to reducing the power consumption and the cost of a system. The invention adopts the monolithic integrated MEMS thermopile to control the working temperature of the multi-quantum well diode, reduces the volume compared with the off-chip packaging scheme, and can realize the local temperature regulation and control of the chip. The integrated device can be prepared by adopting a mature silicon-based gallium nitride LED epitaxial wafer, the performance of the epitaxial wafer is stable and excellent at present, other epitaxial and ion implantation processes are not needed in the preparation process of the device, and the silicon-based substrate can be processed by utilizing a mature MEMS process line, so that the integrated device has important significance for batch production and reduction of production cost.
Drawings
Fig. 1 is a top view of the visible light transceiving integrated device based on the MEMS thermopile of the present invention.
Fig. 2 is a cross-sectional view of the visible light transceiving integrated device based on the MEMS thermopile of the present invention.
Fig. 3 is a bottom view of the visible light transceiving integrated device based on the MEMS thermopile of the present invention.
FIG. 4 is a schematic view showing a buffer layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer sequentially arranged on the upper surface of a substrate from bottom to top.
Fig. 5 is a schematic view showing that the P-type GaN layer and the multi-quantum well layer are patterned to obtain a multi-quantum well structure layer and a P-type GaN structure layer.
Fig. 6 is a schematic diagram illustrating the N-type GaN layer patterned to obtain an N-type GaN structure layer and a plurality of N-type GaN semiconductor arms.
Fig. 7 is a schematic view showing a positive electrode formed on the P-type GaN structure layer.
Fig. 8 is a schematic diagram showing the formation of a negative electrode, a plurality of metal arms, a plurality of hot side interconnect metals, and a plurality of cold side interconnect metals.
Fig. 9 is a schematic view showing the formation of a first cavity in the substrate.
Fig. 10 is a schematic view showing the formation of a second cavity in the buffer layer.
FIG. 11 is a schematic view showing the formation of a cavity on the bottom surface of the N-type GaN structure layer.
Element number description: the structure comprises a substrate 1, a buffer layer 2, a first cavity 3, a second cavity 4, an N-type GaN structure layer 5, a multi-quantum well structure layer 6, a P-type GaN structure layer 7, a positive electrode 8, a negative electrode 9, an N-type GaN semiconductor arm 10, a metal arm 11, a hot end interconnection metal 12, a cold end interconnection metal 13, a cavity 14, a heat sink metal 15, a thermopile positive electrode 16, a thermopile negative electrode 17, an N-type GaN layer 18, a multi-quantum well layer 19 and a P-type GaN layer 20.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 11. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
In the present embodiment, a visible light transceiving integrated device based on a MEMS thermopile is provided, please refer to fig. 1, fig. 2 and fig. 3, which respectively show a top view, a cross-sectional view and a bottom view of the visible light transceiving integrated device, wherein fig. 2 is a cross-sectional view along a direction a-a' of fig. 1. As can be seen from the figure, the visible light transceiving integrated device comprises a substrate 1, a buffer layer 2, a multiple quantum well diode and a thermopile, wherein a first cavity 3 which vertically penetrates through the substrate 1 is arranged in the substrate 1; the buffer layer 2 is positioned on the substrate 1 and covers the first cavity 3, a second cavity 4 which penetrates through the buffer layer 2 from top to bottom is arranged in the buffer layer 2, the second cavity 4 is communicated with the first cavity 3, and the opening area of the second cavity 4 is smaller than that of the first cavity 3; the multiple quantum well diode is positioned on the buffer layer 2 and covers the second cavity 4, the multiple quantum well diode sequentially comprises an N-type GaN structure layer 5, a multiple quantum well structure layer 6 and a P-type GaN structure layer 7 from bottom to top, wherein the edge region of the N-type GaN structure layer 5 is connected with the buffer layer 2, the middle region of the N-type GaN structure layer 5 is suspended above the second cavity 4, the multiple quantum well structure layer 6 and the P-type GaN structure layer 7 are positioned above the middle region of the N-type GaN structure layer 5, the P-type GaN structure layer 7 is provided with a positive electrode 8, and the edge region of the N-type GaN structure layer 5 is provided with a negative electrode 9; the thermopile is located on the buffer layer 2 and distributed around the multiple quantum well diodes, the thermopile comprises a plurality of thermocouples which are sequentially connected in series, each thermocouple comprises an N-type GaN semiconductor arm 10 and a metal arm 11, the N-type GaN semiconductor arm 10 and the metal arm 11 of the same thermocouple are connected through hot end interconnection metal 12, two adjacent thermocouples are connected in series through cold end interconnection metal 13, and the distance between the cold end interconnection metal 13 and the multiple quantum well diodes is larger than the distance between the hot end interconnection metal 12 and the multiple quantum well diodes.
As an example, one end of the N-type GaN semiconductor arm 10 and the metal arm 11 connected to the hot-end interconnection metal 12 is suspended above the first cavity 3, and one end of the N-type GaN semiconductor arm 10 and the metal arm 11 connected to the cold-end interconnection metal 13 horizontally extends out of the first cavity 3 in a direction away from the multiple quantum well diode, thereby implementing an MEMS (micro electro mechanical system) thermopile. By utilizing the refrigeration effect of the MEMS thermopile, the heat dissipation and temperature regulation of the film structure (the multiple quantum well diode) can be realized.
As an example, the lower surface of the N-type GaN structure layer 5 is provided with a cavity 14, and the cavity 14 faces the second cavity 4. The cavity 14 reduces the thickness of the active region, and is beneficial to forming a sub-wavelength thin film structure with the thickness of the active region smaller than the light-emitting wavelength, so that the light-emitting performance of the device is improved.
As an example, the visible light transceiving integrated device further includes a heat sink metal 15, the heat sink metal 15 is located on the buffer layer 2, and a distance between the heat sink metal 15 and the multiple quantum well diode is greater than a distance between the cold end interconnection metal 13 and the multiple quantum well diode.
As an example, the visible light transceiving integrated device further includes a thermopile anode 16 and a thermopile cathode 17, the thermopile anode 16 and the thermopile cathode 17 are located on the buffer layer 2, wherein the thermopile anode 16 is connected to the metal arm 11 of the thermocouple located at the head end of the thermopile, and the thermopile cathode 17 is connected to the N-type GaN semiconductor arm 10 of the thermocouple located at the tail end of the thermopile.
As an example, the thermopiles are circumferentially distributed around the multiple quantum well diode, and the circumferential angle range is greater than 270 °, so that uniform heat dissipation to the periphery can be realized.
As an example, at least one cross section of the multiple quantum well diode is circular or rectangular. The arrangement form of the thermopile depends on the structure form of the multiple quantum well diode, for example, if the multiple quantum well diode adopts a circular structure, the MEMS thermopile is in a ring arrangement form, and if the multiple quantum well diode adopts a rectangular structure, the MEMS thermopile is in a surrounding rectangular arrangement form. Of course, in other embodiments, the cross section of the multiple quantum well diode may have other shapes, and the arrangement of the thermopile is adjusted accordingly, which should not limit the scope of the present invention.
As an example, the substrate 1 includes a silicon substrate 1, the multiple quantum well layer includes an InGaN/GaN stacked layer, the material of the positive electrode 8 includes any one of a Ni/Au stacked layer, a Pt/Au stacked layer, a Ni/Pt/Au stacked layer, and an Au/Mg/Au stacked layer, the material of the negative electrode 9 includes any one of a Ti/Al stacked layer, a Ti/Al/Ti/Au stacked layer, and a Ti/Al/Ni/Au stacked layer, and the metal arm 11, the hot-end interconnection metal 12, and the cold-end interconnection metal 13 may be made of the same material as the material of the negative electrode 9.
In the visible light transceiving integrated device based on the MEMS thermopile of this embodiment, the multiple quantum well diode can simultaneously realize two functions of light emission and light detection, wherein when forward bias is applied to two ends of the multiple quantum well diode, that is, the positive electrode 8 is connected to the positive electrode of the power supply, the negative electrode 910 is connected to the negative electrode of the power supply, diffusion current is dominant, at this time, holes are injected into the positive electrode 8, electrons are injected into the negative electrode 9, and the injected electrons and holes are confined in the narrow band material InGaN of the multiple quantum well structure layer 6, and are recombined to emit light of a spectral line corresponding to an energy band structure; when photons with proper energy are incident on the multiple quantum well diode, light interacts with a semiconductor material to generate electrons and holes, namely photon-generated carriers, when an external voltage is negative, namely the positive electrode 8 is connected with the negative electrode of a power supply, the negative electrode 9 is connected with the positive electrode of the power supply, photocurrent can be output in an external circuit, and light intensity detection can be realized according to the magnitude of the photocurrent.
In addition, when the thermopile anode 16 is connected with a power supply anode and the thermopile cathode 17 is connected with a power supply cathode, heat can be extracted from the inner side of the thermopile to the outer side according to the Peltier effect, and temperature difference is generated at two ends of the thermopile, so that heat dissipation and temperature control can be realized when the multiple quantum well diode emits light.
It should be noted that the thermopile is electrically connected to the multiple quantum well diode independently, and the temperature of the light emitting region is controlled by applying a certain voltage or current to the two ends of the thermopile, wherein the thermopile can be independently controlled, the temperature control is flexible, not only can the heat dissipation be realized, but also the accurate temperature control can be realized, and the electronic device can work at a predetermined temperature.
The visible light receiving and transmitting integrated device based on the MEMS thermopile of the embodiment utilizes a multi-quantum well diode structure to simultaneously realize two functions of light emission and light detection, thereby greatly improving the integration level of the photonic device and being beneficial to reducing the power consumption and the cost of a system. The monolithic integrated MEMS thermopile is adopted to control the working temperature of the multi-quantum well diode, compared with an off-chip packaging scheme (the connection of two components is realized in a packaging mode), the size is reduced, the compatibility of the thermopile and the diode preparation is realized, and the local temperature regulation and control of a chip can be realized.
Example two
The embodiment provides a method for manufacturing a visible light transceiving integrated device based on a MEMS thermopile, which comprises the following steps:
as shown in fig. 4, a substrate 1 is provided, and a buffer layer 2, an N-type GaN layer 18, a multi-quantum well layer 19 and a P-type GaN layer 20 are sequentially disposed on an upper surface of the substrate 1 from bottom to top.
By way of example, the substrate 1 includes, but is not limited to, a Si substrate, and the multiple quantum well layer 19 includes an InGaN/GaN stack.
As shown in fig. 5, the P-type GaN layer 20 and the multiple quantum well layer 19 are patterned to obtain the multiple quantum well structure layer 6 and the P-type GaN structure layer 7.
Specifically, the P-type GaN layer 20 and the multiple quantum well layer 19 are etched by lithography until the N-type GaN layer 18 is exposed, thereby forming a light emitting region of the multiple quantum well diode.
As shown in fig. 6, the N-type GaN layer 18 is patterned to obtain the N-type GaN structure layer 5 and the plurality of N-type GaN semiconductor arms 10.
Specifically, the N-type GaN layer 18 is etched and etched until the buffer layer 2 is exposed, thereby forming the N-type GaN structure layer 5 of the multiple quantum well diode and the N-type GaN semiconductor arm 10 of the thermocouple.
As shown in fig. 7, a positive electrode 8 is formed on the P-type GaN structure layer 7.
Specifically, a metal layer is photoetched and deposited, then the photoresist and the metal layer on the photoresist are removed, and the positive electrode 8 of the multiple quantum well diode is formed by stripping. The material of the positive electrode 8 includes, but is not limited to, any one of a Ni/Au stack, a Pt/Au stack, a Ni/Pt/Au stack, and an Au/Mg/Au stack. In this embodiment, the heat sink metal 15 is formed on the buffer layer 2 at the same time as the positive electrode 8 is formed.
As shown in fig. 8, a negative electrode 9, a plurality of metal arms 11 (see fig. 1), a plurality of hot-end interconnection metals 12, and a plurality of cold-end interconnection metals 13 are formed.
As an example, another metal layer is photo-etched and deposited, and the photoresist and the metal layer on the photoresist are removed, and the negative electrode 9 forming the multiple quantum well diode, the metal arm 11 of the thermopile, the hot-side interconnection metal 12, and the cold-side interconnection metal 13 are stripped. The metal layer includes, but is not limited to, any one of a Ti/Al stack, a Ti/Al/Ti/Au stack, and a Ti/Al/Ni/Au stack.
As an example, the metal arm 11 is formed, and a thermopile positive electrode 16 and a thermopile negative electrode 17 are formed on the buffer layer 2.
As shown in fig. 9, a first cavity 3 is formed in the substrate 1, and the first cavity 3 penetrates the substrate 1 up and down.
As an example, a deep reactive ion etching technique of silicon is used to remove the silicon substrate in the central region of the device to obtain said first cavity 3. One end of the N-type GaN semiconductor arm 10 and one end of the metal arm 11 connected to the hot-end interconnection metal 12 are suspended above the first cavity 3, and one end of the N-type GaN semiconductor arm 10 and one end of the metal arm 11 connected to the cold-end interconnection metal 13 horizontally extend out of the first cavity 3 in a direction away from the multiple quantum well diode, so that the MEMS thermopile is realized. By utilizing the refrigeration effect of the MEMS thermopile, the heat dissipation and temperature regulation of the film structure (the multiple quantum well diode) can be realized.
As shown in fig. 10, a second cavity 4 is formed in the buffer layer 2, the second cavity 4 penetrates the buffer layer 2 up and down and is communicated with the first cavity 3, and an opening area of the second cavity 4 is smaller than an opening area of the first cavity 3.
As an example, the buffer layer 2 and part of the N-type GaN structure layer 5 of the light emitting region are removed by using a III-V inductively coupled plasma etching technique to obtain the second cavity 4.
As shown in fig. 11, in the present embodiment, a cavity 14 is further formed on the lower surface of the N-type GaN structure layer 5, and the cavity 14 faces the second cavity 4. The cavity 14 reduces the thickness of the active region, and is beneficial to forming a sub-wavelength thin film structure with the thickness of the active region smaller than the light-emitting wavelength, so that the light-emitting performance of the device is improved.
Thus, a visible light transceiving integrated device based on the MEMS thermopile is manufactured, wherein the N-type GaN structure layer 5, the multiple quantum well structure layer 6 and the P-type GaN structure layer 7 are used as components of a multiple quantum well diode, the edge region of the N-type GaN structure layer 5 is connected with the buffer layer 2, the middle region of the N-type GaN structure layer 5 is suspended above the second cavity 4, the multiple quantum well structure layer 6 and the P-type GaN structure layer 7 are located above the middle region of the N-type GaN structure layer 5, and the negative electrode 9 is located on the edge region of the N-type GaN structure layer 5; the plurality of N-type GaN semiconductor arms 10 and the plurality of metal arms 11 are used as components of a thermopile, the thermopile is positioned on the buffer layer 2 and distributed around the multiple quantum well diodes, the thermopile comprises a plurality of thermocouples which are sequentially connected in series, each thermocouple comprises one N-type GaN semiconductor arm 10 and one metal arm 11, other materials do not need to be extended, the N-type GaN semiconductor arms 10 and the metal arms 11 of the same thermocouple are connected through the hot end interconnection metal 12, two adjacent thermocouples are connected in series through the cold end interconnection metal 13, the distance between the cold end interconnection metal 13 and the multiple quantum well diodes is larger than the distance between the hot end interconnection metal 12 and the multiple quantum well diodes, the distance between the heat sink metal 15 and the multiple quantum well diodes is larger than the distance between the cold end interconnection metal 13 and the multiple quantum well diodes, the thermopile anode 16 is connected to the metal arm 11 of the thermocouple located at the head end of the thermopile, and the thermopile cathode 17 is connected to the N-type GaN semiconductor arm 10 of the thermocouple located at the tail end of the thermopile.
As an example, the thermopiles are circumferentially distributed around the multiple quantum well diode, and the circumferential angle range is larger than 270 degrees, so that uniform heat dissipation to the periphery is realized.
As an example, at least one cross section of the multiple quantum well diode is circular or rectangular. The arrangement form of the thermopile depends on the structural form of the multiple quantum well diode, if the multiple quantum well diode adopts a circular structure, the MEMS thermopile is in an annular arrangement form, and if the multiple quantum well diode adopts a rectangular structure, the MEMS thermopile is in an arrangement form surrounding the rectangle. Of course, in other embodiments, the cross section of the multiple quantum well diode may have other shapes, and the arrangement of the thermopile is adjusted accordingly, which should not limit the scope of the present invention.
According to the manufacturing method of the visible light transceiving integrated device based on the MEMS thermopile, the mature silicon-based gallium nitride LED epitaxial wafer is adopted to prepare the visible light transceiving integrated device, the performance of the epitaxial wafer is stable and excellent at present, other epitaxy and ion implantation processes are not needed in the device preparation process, and the silicon-based substrate can be processed by utilizing a mature MEMS process line, so that the manufacturing method has important significance for batch production and reduction of production cost.
In summary, the visible light transceiving integrated device based on the MEMS thermopile and the manufacturing method thereof of the present invention utilize a multiple quantum well diode structure to simultaneously achieve two functions of light emission and light detection, greatly improve the integration level of the photonic device, and facilitate to reduce the power consumption and cost of the system. The invention adopts the monolithic integrated MEMS thermopile to control the working temperature of the multi-quantum well diode, reduces the volume compared with the off-chip packaging scheme, and can realize the local temperature regulation and control of the chip. The integrated device can be prepared by adopting a mature silicon-based gallium nitride LED epitaxial wafer, the performance of the epitaxial wafer is stable and excellent at present, other epitaxial and ion implantation processes are not needed in the preparation process of the device, and the silicon-based substrate can be processed by utilizing a mature MEMS process line, so that the integrated device has important significance for batch production and reduction of production cost. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (16)
1. A visible light receiving and transmitting integrated device based on a MEMS thermopile is characterized by comprising:
the device comprises a substrate, a first cavity and a second cavity, wherein the first cavity penetrates through the substrate up and down;
the buffer layer is positioned on the substrate and covers the first cavity, a second cavity penetrating through the buffer layer from top to bottom is arranged in the buffer layer, the second cavity is communicated with the first cavity, and the opening area of the second cavity is smaller than that of the first cavity;
the multiple quantum well diode is positioned on the buffer layer and covers the second cavity, the multiple quantum well diode sequentially comprises an N-type GaN structure layer, a multiple quantum well structure layer and a P-type GaN structure layer from bottom to top, wherein the edge region of the N-type GaN structure layer is connected with the buffer layer, the middle region of the N-type GaN structure layer is suspended above the second cavity, the multiple quantum well structure layer and the P-type GaN structure layer are positioned above the middle region of the N-type GaN structure layer, a positive electrode is arranged on the P-type GaN structure layer, and a negative electrode is arranged on the edge region of the N-type GaN structure layer;
the thermoelectric pile is positioned on the buffer layer and distributed around the multiple quantum well diodes, the thermoelectric pile comprises a plurality of thermocouples which are sequentially connected in series, each thermocouple comprises an N-type GaN semiconductor arm and a metal arm, the N-type GaN semiconductor arm and the metal arm of the same thermocouple are connected through hot end interconnection metal, two adjacent thermocouples are connected in series through cold end interconnection metal, and the distance between the cold end interconnection metal and the multiple quantum well diodes is larger than the distance between the hot end interconnection metal and the multiple quantum well diodes.
2. The visible light transceiving integrated device based on the MEMS thermopile of claim 1, wherein: the N-type GaN semiconductor arm and one end, connected with the hot-end interconnection metal, of the metal arm are suspended above the first cavity, and one ends, connected with the cold-end interconnection metal, of the N-type GaN semiconductor arm and the metal arm horizontally extend out of the first cavity in the direction far away from the multiple quantum well diode.
3. The visible light transceiving integrated device based on the MEMS thermopile of claim 1, wherein: and a concave cavity is formed in the lower surface of the N-type GaN structure layer and is opposite to the second cavity.
4. The visible light transceiving integrated device based on the MEMS thermopile of claim 1, wherein: the visible light transceiving integrated device further comprises heat sink metal, the heat sink metal is located on the buffer layer, and the distance between the heat sink metal and the multiple quantum well diode is larger than the distance between the cold end interconnection metal and the multiple quantum well diode.
5. The visible light transceiving integrated device based on the MEMS thermopile of claim 1, wherein: the visible light transceiving integrated device further comprises a thermopile anode and a thermopile cathode, wherein the thermopile anode and the thermopile cathode are located on the buffer layer, the thermopile anode is connected with the metal arm of the thermocouple located at the head end of the thermopile, and the thermopile cathode is connected with the N-type GaN semiconductor arm of the thermocouple located at the tail end of the thermopile.
6. The visible light transceiving integrated device based on the MEMS thermopile of claim 1, wherein: the thermopiles are distributed around the multiple quantum well diodes in a surrounding mode, and the surrounding angle range is larger than 270 degrees.
7. The visible light transceiving integrated device based on the MEMS thermopile of claim 1, wherein: in a top view, at least one cross section of the multiple quantum well diode is circular or rectangular.
8. The visible light transceiving integrated device based on the MEMS thermopile of claim 1, wherein: the multi-quantum well structure layer comprises an InGaN/GaN laminated layer, the material of the positive electrode comprises any one of a Ni/Au laminated layer, a Pt/Au laminated layer, a Ni/Pt/Au laminated layer and an Au/Mg/Au laminated layer, and the material of the negative electrode comprises any one of a Ti/Al laminated layer, a Ti/Al/Ti/Au laminated layer and a Ti/Al/Ni/Au laminated layer.
9. A manufacturing method of a visible light receiving and transmitting integrated device based on an MEMS thermopile is characterized by comprising the following steps:
providing a substrate, wherein a buffer layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer are sequentially arranged on the upper surface of the substrate from bottom to top;
imaging the P-type GaN layer and the multi-quantum well layer to obtain a multi-quantum well structure layer and a P-type GaN structure layer;
patterning the N-type GaN layer to obtain an N-type GaN structure layer and a plurality of N-type GaN semiconductor arms;
forming a positive electrode on the P-type GaN structure layer;
forming a negative electrode, a plurality of metal arms, a plurality of hot-end interconnect metals, and a plurality of cold-end interconnect metals;
forming a first cavity in the substrate, wherein the first cavity penetrates through the substrate up and down;
forming a second cavity in the buffer layer, wherein the second cavity penetrates through the buffer layer from top to bottom and is communicated with the first cavity, and the opening area of the second cavity is smaller than that of the first cavity;
wherein:
the N-type GaN structure layer, the multiple quantum well structure layer and the P-type GaN structure layer are used as components of a multiple quantum well diode, the edge region of the N-type GaN structure layer is connected with the buffer layer, the middle region of the N-type GaN structure layer is suspended above the second cavity, the multiple quantum well structure layer and the P-type GaN structure layer are located above the middle region of the N-type GaN structure layer, and the negative electrode is located on the edge region of the N-type GaN structure layer;
the plurality of N-type GaN semiconductor arms and the plurality of metal arms are used as components of a thermopile, the thermopile is positioned on the buffer layer and distributed around the multiple quantum well diode, the thermopile comprises a plurality of thermocouples which are sequentially connected in series, each thermocouple comprises an N-type GaN semiconductor arm and a metal arm, the N-type GaN semiconductor arm and the metal arm of the same thermocouple are connected through the hot end interconnection metal, two adjacent thermocouples are connected in series through the cold end interconnection metal, and the distance between the cold end interconnection metal and the multiple quantum well diode is greater than the distance between the hot end interconnection metal and the multiple quantum well diode.
10. The method for manufacturing the visible light transceiving integrated device based on the MEMS thermopile of claim 9, wherein: the N-type GaN semiconductor arm and one end, connected with the hot-end interconnection metal, of the metal arm are suspended above the first cavity, and one ends, connected with the cold-end interconnection metal, of the N-type GaN semiconductor arm and the metal arm horizontally extend out of the first cavity in the direction far away from the multiple quantum well diode.
11. The method for manufacturing the visible light transceiving integrated device based on the MEMS thermopile of claim 9, wherein: the method further comprises the step of forming a concave cavity on the lower surface of the N-type GaN structure layer, wherein the concave cavity is opposite to the second cavity.
12. The method for manufacturing the visible light transceiving integrated device based on the MEMS thermopile of claim 9, wherein: and forming the positive electrode and forming a heat sink metal on the buffer layer, wherein the distance between the heat sink metal and the multiple quantum well diode is greater than the distance between the cold end interconnection metal and the multiple quantum well diode.
13. The method for manufacturing the visible light transceiving integrated device based on the MEMS thermopile of claim 9, wherein: and forming a thermopile anode and a thermopile cathode on the buffer layer while forming the metal arm, wherein the thermopile anode is connected with the metal arm of the thermocouple positioned at the head end of the thermopile, and the thermopile cathode is connected with the N-type GaN semiconductor arm of the thermocouple positioned at the tail end of the thermopile.
14. The method for manufacturing the visible light transceiving integrated device based on the MEMS thermopile of claim 9, wherein: the thermopiles are distributed around the multiple quantum well diodes in a surrounding mode, and the surrounding angle range is larger than 270 degrees.
15. The method for manufacturing the visible light transceiving integrated device based on the MEMS thermopile of claim 9, wherein: in a top view, at least one cross section of the multiple quantum well diode is circular or rectangular.
16. The method for manufacturing the visible light transceiving integrated device based on the MEMS thermopile of claim 9, wherein: the multiple quantum well layer comprises an InGaN/GaN laminated layer, the material of the positive electrode comprises any one of a Ni/Au laminated layer, a Pt/Au laminated layer, a Ni/Pt/Au laminated layer and an Au/Mg/Au laminated layer, and the material of the negative electrode comprises any one of a Ti/Al laminated layer, a Ti/Al/Ti/Au laminated layer and a Ti/Al/Ni/Au laminated layer.
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