CN109904276B - GaN-based vertical integrated optoelectronic chip and preparation method thereof - Google Patents
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Abstract
The invention relates to a GaN-based vertical integrated photoelectronic chip and a preparation method thereof, and solves the technical problems that the integration density of the existing GaN-based vertical integrated photoelectronic chip cannot be further improved and is the same as the horizontal structure, and the performance cannot reach the optimum. The GaN-based vertical integrated optoelectronic chip can realize optical communication between an LED and a PD, epitaxial layers are respectively grown on two sapphires, designed structures of a detector and a light emitting diode are grown on the epitaxial layers, the sapphires are thinned, and the surfaces of the two sapphires without growth devices are bonded together through Bonding, so that the GaN-based vertical integrated optoelectronic chip can be used for establishing optical communication in the vertical direction and further improving the integration density of optical communication of GaN-based materials. According to the structure, the detector PD and the light emitting diode LED are respectively and independently designed, so that information transmission among devices with vertical structures can be realized. The invention has simple process, low cost and wide application prospect.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a GaN-based vertically integrated optoelectronic chip and a preparation method thereof.
Background
Integrated photoelectrons have important application prospects in the fields of information communication, multimedia, personal consumption, measurement sensing, biosensing, military and the like, and compared with Si-based integrated photoelectronic devices, GaN-based integrated photoelectrons have significant advantages, which are mainly embodied in the following two aspects: (1) si is an indirect bandgap semiconductor material, and Si-based light source problems are significant problems that restrict the development and application of Si-based photoelectrons; (2) the traditional Si material has strong absorptivity to visible light, SiO2The material has smaller refractive index and poorer optical field limiting capability, and the GaN material does not absorb visible light and has larger refractive index. Theoretically, GaN-based materials are used to prepare visible light waveguides andexcellent material for planar integrated photonic devices.
At present, from the development of GaN-based integrated photoelectrons, active devices such as a light emitting diode Led, a modulator, a detector PD and the like are mainly integrated on the same substrate in a horizontal structure, and are connected by passive devices such as an optical waveguide, an isolator, a coupler and the like to form a micro-optoelectronic system. In China, the light emitting and the detection of the visible light communication InGaN/GaN multi-quantum well diode with the horizontal structure are realized, and the information transmission rate can reach 20 MHZ. However, the integrated photoelectron of the horizontal structure has two disadvantages, the first is that the integration density of the planar structure cannot be further improved, and the second is that the horizontal GaN structure integrates a detector PD and a light emitting diode LED which require the same horizontal structure, so that the performance of the two cannot be optimized, and the transmission performance of the integrated photoelectron communication is affected.
Disclosure of Invention
The invention provides a GaN-based vertical integrated optoelectronic chip and a preparation method thereof, aiming at solving the technical problems that the GaN integrated optoelectronic integrated density in the prior art can not be further improved and can not be the same as the horizontal structure and the performance can not reach the optimum.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a GaN-based vertical integrated optoelectronic chip comprises a multiple quantum well diode (LED) part and a multiple quantum well detector (PD) part;
the multiple quantum well diode LED section includes: a substrate and a multiple quantum well LED structure;
the multi-quantum well LED structure comprises a GaN epitaxial layer, an n-GaN layer, an In GaN/GaN layer and a p-GaN layer which are sequentially grown on a substrate;
the multiple quantum well detector PD part includes: a substrate and a multiple quantum well PD structure;
the multi-quantum well PD structure comprises a GaN epitaxial layer, aN n-GaN layer, aN InGaaN/GaN layer and a p-GaN layer which are sequentially grown on a substrate;
one surface of the substrate of the LED part of the multiple quantum well diode, on which the device is not grown, and one surface of the substrate of the PD part of the multiple quantum well detector, on which the device is not grown, are bonded together;
the multi-quantum well LED structure and the multi-quantum well PD structure are plated with metal electrodes respectively and packaged with leads.
In the above technical scheme, the n-GaN is formed by doping Si in a GaN material, and the p-GaN is formed by doping Mg in the GaN material.
In the above technical solution, the substrate is sapphire.
In the above technical solution, the metal electrode is Ni, Au, Pt, Ni/Au, Ti/Al or Ti/Al/Ti/Au.
A preparation method of a GaN-based vertical integrated optoelectronic chip comprises the following steps:
growing a GaN epitaxial layer on a substrate;
growing an n-GaN layer on the GaN epitaxial layer;
growing an InGaN/GaN layer on the n-GaN layer;
step four, performing photoetching and etching after spin-coating photoresist on the InGaN/GaN layer in the step three;
growing a p-GaN layer on the InGaN/GaN layer to complete the preparation of the multi-quantum well LED structure;
step six, repeating the steps one to five to obtain a multi-quantum well PD structure;
polishing and thinning one surfaces of the two substrates, on which the devices are not grown, and then bonding the two substrates together;
and step eight, respectively evaporating metal electrodes on the multi-quantum well LED structure and the multi-quantum well PD structure, and then packaging by leads to complete the preparation of the GaN-based vertical integrated optoelectronic chip.
In the technical scheme, an MOCVD technology is adopted to grow a GaN epitaxial layer, an n-GaN layer, an InGaN/GaN layer or a p-GaN layer.
In the above technical solution, in the fourth step, the photoresist is a negative photoresist or a positive photoresist with an inversion characteristic.
In the above technical scheme, when the metal electrode is a Ni/Au composite electrode, the annealing condition temperature is 400-600 ℃ and the time is 3-15 minutes.
In the above technical scheme, when the metal electrode is a Ti/Al composite electrode, the annealing temperature is 500-700 ℃ and the time is 30 seconds-5 minutes.
The invention has the beneficial effects that:
the GaN-based vertical integrated optoelectronic chip can realize optical communication between an LED and a PD, epitaxial layers are respectively grown on two sapphires, designed structures of a detector and a light emitting diode are grown on the epitaxial layers, the sapphires are thinned, and the surfaces of the two sapphires without growth devices are bonded together through Bonding, so that the GaN-based vertical integrated optoelectronic chip can be used for establishing optical communication in the vertical direction and further improving the integration density of optical communication of GaN-based materials. In addition, the structure can realize information transmission between devices with vertical structures by respectively and independently designing the detector PD and the light emitting diode LED, respectively growing epitaxial layers on the two sapphires and growing the structures of the designed detector and the light emitting diode on the epitaxial layers, and can also solve the problem that the optical communication performance cannot reach the optimum due to the same PD and LED structures in a horizontal structure.
The GaN-based vertical integrated photoelectronic chip further improves the integration density of a photonic device, reduces the difficulty and cost of device preparation, and realizes the miniaturization and integration of the device.
The preparation method of the GaN-based vertical integrated optoelectronic chip has the advantages of simple process, low cost and wide application prospect.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic structural diagram of a GaN-based vertically integrated optoelectronic chip of the present invention.
FIG. 2 is a flow chart of the fabrication of a GaN-based vertically integrated optoelectronic chip of the present invention.
Detailed Description
The invention provides a GaN-based vertical integrated optoelectronic chip, which comprises a multi-quantum well diode LED part and a multi-quantum well detector PD part; the multiple quantum well diode LED section includes: a substrate and a multiple quantum well LED structure; the multi-quantum well LED structure comprises a GaN epitaxial layer, an n-GaN layer, an InGaN/GaN layer and a p-GaN layer which are sequentially grown on a substrate; the multiple quantum well detector PD part includes: a substrate and a multiple quantum well PD structure; the multi-quantum well PD structure comprises a GaN epitaxial layer, an n-GaN layer, an InGaN/GaN layer and a p-GaN layer which are sequentially grown on a substrate; one surface of the substrate of the LED part of the multiple quantum well diode, on which the device is not grown, and one surface of the substrate of the PD part of the multiple quantum well detector, on which the device is not grown, are bonded together; the multi-quantum well LED structure and the multi-quantum well PD structure are plated with metal electrodes respectively and packaged with leads. Preferably, the n-GaN is formed by doping Si in a GaN material, and the p-GaN is formed by doping Mg in the GaN material; the substrate is sapphire; the metal electrode is Ni, Au, Pt, Ni/Au, Ti/Al or Ti/Al/Ti/Au.
The invention also provides a preparation method of the GaN-based vertical integrated optoelectronic chip, which comprises the following steps:
growing a GaN epitaxial layer on a substrate;
growing an n-GaN layer on the GaN epitaxial layer;
growing an InGaN/GaN layer on the n-GaN layer;
step four, performing photoetching and etching after spin-coating photoresist on the InGaN/GaN layer in the step three;
growing a p-GaN layer on the InGaN/GaN layer to complete the preparation of the multi-quantum well LED structure;
step six, repeating the steps one to five to obtain a multi-quantum well PD structure;
polishing and thinning one surfaces of the two substrates, on which the devices are not grown, and then bonding the two substrates together;
and step eight, respectively evaporating metal electrodes on the multi-quantum well LED structure and the multi-quantum well PD structure, and then packaging by leads to complete the preparation of the GaN-based vertical integrated optoelectronic chip.
Preferably, in the fourth step, the photoresist is a negative photoresist or a positive photoresist having an inversion characteristic.
Preferably, the substrate required for growing the GaN material is a conventional substrate such as sapphire, silicon carbide and the like, and the growing method is a Metal Organic Chemical Vapor Deposition (MOCVD) method, especially a high-temperature MOCVD method.
Preferably, the photoresist used for the lithography is a negative photoresist or a positive photoresist having an inverse characteristic.
Preferably, the method for preparing the electrode is electron beam evaporation or thermal evaporation, the kind of the electrode material is Ni, Au, Pt, Ni/Au, Ti/Al or Ti/Al/Ti/Au, and the like, and the same kind of metal or different kinds of metal capable of forming Schottky or ohmic type half-contact with GaN.
Preferably, the annealing condition in preparing the electrode depends on the metal type, when the metal electrode is a Ni/Au composite electrode, the annealing condition temperature is 400-600 ℃, and the time is 3-15 minutes; when the metal electrode is a Ti/Al composite electrode, the annealing temperature is 500-700 ℃ for 30 seconds-5 minutes.
Preferably, the polishing thickness of the sapphire substrate is determined according to design requirements.
The present embodiment is described with reference to the accompanying drawings, and fig. 2 is a flow chart of the GaN-based vertical integrated optoelectronic chip of the present invention, which includes:
(1) the sapphire substrate (No. 1) was cleaned and blown dry with nitrogen.
(2) The MOCVD method is used for growing a GaN epitaxial layer on a sapphire substrate, then growing an n-GaN layer on the GaN epitaxial layer, then growing an InGaN/GaN layer (also called as an MQWs layer) on the n-GaN layer, and improving the light-emitting wavelength of the multi-quantum well LED by adjusting the In component ratio In the InGaN.
(3) And coating photoresist on the InGaN/GaN layer for photoetching development, using a customized mask plate in the exposure process, completely placing a pattern region on the mask plate above a wafer, setting the exposure time of 7s, and transferring the pattern on the designed mask plate to the photoresist layer by using an exposure technology. The exposed device needs to be developed to show the pattern. The development is mainly carried out by using 3038 developing solution, the developing solution is washed by clear water and dried by nitrogen after the development, and then water vapor is dried on a hot plate, so that the photoetching development step is completed. After photoetching development, ICP nitride etching is needed to form the structure of the device, and cleaning and drying are carried out. Then growing a p-GaN layer on the etched InGaN/GaN layer to finish the preparation of the multi-quantum well LED structure;
(4) since the sapphire substrate (No. 1) is too thick, we need to polish the substrate down to reduce the propagation path of light.
(5) The sapphire substrate (No. 2) was cleaned and blown dry with nitrogen.
(6) The MOCVD method is utilized to grow a GaN epitaxial layer on a sapphire substrate, then grow an n-GaN layer on the GaN epitaxial layer, and then grow an InGaN/GaN layer on the n-GaN layer.
(7) And coating photoresist on the InGaN/GaN layer for photoetching development, using a customized mask plate in the exposure process, completely placing a pattern region on the mask plate above a wafer, setting the exposure time of 7s, and transferring the waveguide structure designed on the mask plate to the photoresist layer by an exposure technology. The exposed wafer needs to be developed to display a pattern. The development is mainly carried out by using 3038 developing solution, the developing solution is washed by clear water and dried by nitrogen after the development, and then water vapor is dried on a hot plate, so that the photoetching development step is completed. After photoetching development, ICP nitride etching is needed to form the structure of the device, and cleaning and drying are carried out. Then growing a p-GaN layer on the etched InGaN/GaN layer to finish the preparation of the multi-quantum well PD structure;
(8) the sapphire substrate (No. 2) was polished and thinned.
(9) And Bonding one surface of the sapphire substrate (number 1) without a grown device and one surface of the sapphire substrate (number 2) without a grown device together through Bonding, plating metal electrodes on the multi-quantum well LED structure and the multi-quantum well PD structure respectively by using an electron beam evaporation technology, and packaging leads to prepare the GaN-based vertical integrated optoelectronic chip.
Referring to fig. 1, the GaN-based vertical integrated optoelectronic chip of the present invention is further described in detail with reference to specific embodiments as follows:
the required substrate of GaN material is selected, and the invention selects sapphire as the substrate.
The multi-quantum well LED structure is prepared by a multi-step growth method, a GaN epitaxial layer, an n-GaN layer, an InGaN/GaN layer and a p-GaN layer grow by a high-temperature MOCVD technology, and particularly by a high-temperature MOCVD method, the thickness of each layer is not specially required, and the LED structure can be designed according to actual needs. The n-GaN is a structure formed by doping Si In a GaN material, the InGaN/GaN layer is a structure formed by growing InGaN and GaN according to a certain proportion of components, light with a required emission wavelength is set according to an In component In the InGaN, and the p-GaN is formed by doping Mg In the GaN material.
The invention utilizes the photoetching technology to etch the integrated waveguide design pattern on the mask plate.
And evaporating a Ni/Au composite layer of the Schottky contact electrode on the p-GaN layer by using an electron beam evaporation technology, wherein the thickness of the Ni/Au composite layer is 10-300 nanometers.
And annealing the Ni/Au Schottky contact electrode by using a rapid annealing furnace in a nitrogen atmosphere at the temperature of 400-600 ℃ for 3-15 minutes.
And repeating the steps to obtain the multi-quantum well PD structure.
And Bonding one surfaces of the sapphire substrates of the multiple quantum well LED structure and the multiple quantum well PD structure, which are not provided with devices, together through Bonding, and packaging a lead.
The invention will be further described with reference to the following figures and examples, but the invention is not limited to these examples.
Example 1
(1) The sapphire substrate (No. 1) was cleaned and blown dry with nitrogen.
(2) The MOCVD method is used for growing a GaN epitaxial layer on a sapphire substrate, then growing an n-GaN layer on the GaN epitaxial layer, and then growing an InGaN/GaN layer (also called MQWs layer) on the n-GaN layer.
(3) And coating photoresist on the InGaN/GaN layer for photoetching development, using a customized mask plate in the exposure process, completely placing a pattern region on the mask plate above a wafer, setting the exposure time of 7s, and transferring the pattern on the designed mask plate to the photoresist layer by using an exposure technology. The exposed device needs to be developed to show the pattern. The development is mainly carried out by using 3038 developing solution, the developing solution is washed by clear water and dried by nitrogen after the development, and then water vapor is dried on a hot plate, so that the photoetching development step is completed. After photoetching development, ICP nitride etching is needed to form the structure of the device, and cleaning and drying are carried out. Then growing a p-GaN layer on the etched InGaN/GaN layer to finish the preparation of the multi-quantum well LED structure;
the n-GaN is formed by doping Si in a GaN material, and the p-GaN is formed by doping Mg in the GaN material;
(4) preparing a metal electrode Ni/Au on the multi-quantum well LED structure by vacuum evaporation, wherein the thickness of the metal electrode Ni/Au is 100 nanometers, and then annealing at the temperature of 500 ℃ for 10 minutes;
(5) since the sapphire substrate (No. 1) is too thick, we need to polish the substrate down to reduce the propagation path of light.
(6) The sapphire substrate (No. 2) was cleaned and blown dry with nitrogen.
(7) The method comprises the steps of growing a GaN epitaxial layer on a sapphire substrate by using an MOCVD method, then growing an n-GaN layer on the GaN epitaxial layer, then growing an InGaN/GaN layer on the n-GaN layer, and improving the luminous efficiency of the multi-quantum well PD by adjusting the component ratio of the InGaN/GaN.
(8) And coating photoresist on the InGaN/GaN layer for photoetching development, using a customized mask plate in the exposure process, completely placing a pattern region on the mask plate above a wafer, setting the exposure time of 7s, and transferring the waveguide structure designed on the mask plate to the photoresist layer by an exposure technology. The exposed wafer needs to be developed to display a pattern. The development is mainly carried out by using 3038 developing solution, the developing solution is washed by clear water and dried by nitrogen after the development, and then water vapor is dried on a hot plate, so that the photoetching development step is completed. After photoetching development, ICP nitride etching is needed to form the structure of the device, and cleaning and drying are carried out. Then growing a p-GaN layer on the etched InGaN/GaN layer to finish the preparation of the multi-quantum well PD structure;
(9) preparing a metal electrode Ni/Au on the multi-quantum well PD structure by vacuum evaporation, wherein the thickness of the metal electrode Ni/Au is 100 nanometers, and then annealing at the annealing temperature of 500 ℃ for 10 minutes;
(10) the sapphire substrate (No. 2) was polished and thinned.
(11) And Bonding one surface of the sapphire substrate (number 1) on which the device is not grown and one surface of the sapphire substrate (number 2) on which the device is not grown together through Bonding, and packaging a lead to obtain the GaN-based vertical integrated optoelectronic chip shown in the figure 1.
Example 2
(1) The sapphire substrate (No. 1) was cleaned and blown dry with nitrogen.
(2) The MOCVD method is used for growing a GaN epitaxial layer on a sapphire substrate, then growing an n-GaN layer on the GaN epitaxial layer, and then growing an InGaN/GaN layer (also called MQWs layer) on the n-GaN layer.
(3) And coating photoresist on the InGaN/GaN layer for photoetching development, using a customized mask plate in the exposure process, completely placing a pattern region on the mask plate above a wafer, setting the exposure time of 7s, and transferring the pattern on the designed mask plate to the photoresist layer by using an exposure technology. The exposed device needs to be developed to show the pattern. The development is mainly carried out by using 3038 developing solution, the developing solution is washed by clear water and dried by nitrogen after the development, and then water vapor is dried on a hot plate, so that the photoetching development step is completed. After photoetching development, ICP nitride etching is needed to form the structure of the device, and cleaning and drying are carried out. Then growing a p-GaN layer on the etched InGaN/GaN layer to finish the preparation of the multi-quantum well LED structure;
the n-GaN is formed by doping Si in a GaN material, and the p-GaN is formed by doping Mg in the GaN material;
(4) preparing a metal electrode Ti/Al on the multi-quantum well LED structure by vacuum evaporation, wherein the thickness of the metal electrode Ti/Al is 50 nanometers, and then annealing, wherein the annealing temperature is 600 ℃, and the time is 2 minutes;
(5) since the sapphire substrate (No. 1) is too thick, we need to polish the substrate down to reduce the propagation path of light.
(6) The sapphire substrate (No. 2) was cleaned and blown dry with nitrogen.
(7) The method comprises the steps of growing a GaN epitaxial layer on a sapphire substrate by using an MOCVD method, then growing an n-GaN layer on the GaN epitaxial layer, then growing an InGaN/GaN layer on the n-GaN layer, and improving the luminous efficiency of the multi-quantum well PD by adjusting the component ratio of the InGaN/GaN.
(8) And coating photoresist on the InGaN/GaN layer for photoetching development, using a customized mask plate in the exposure process, completely placing a pattern region on the mask plate above a wafer, setting the exposure time of 7s, and transferring the waveguide structure designed on the mask plate to the photoresist layer by an exposure technology. The exposed wafer needs to be developed to display a pattern. The development is mainly carried out by using 3038 developing solution, the developing solution is washed by clear water and dried by nitrogen after the development, and then water vapor is dried on a hot plate, so that the photoetching development step is completed. After photoetching development, ICP nitride etching is needed to form the structure of the device, and cleaning and drying are carried out. Then growing a p-GaN layer on the etched InGaN/GaN layer to finish the preparation of the multi-quantum well PD structure;
(9) preparing a metal electrode Ti/Al on the multi-quantum well PD structure by vacuum evaporation, wherein the thickness of the metal electrode Ti/Al is 50 nanometers, and then annealing, wherein the annealing temperature is 600 ℃, and the time is 2 minutes;
(10) the sapphire substrate (No. 2) was polished and thinned.
(11) And Bonding one surface of the sapphire substrate (number 1) on which the device is not grown and one surface of the sapphire substrate (number 2) on which the device is not grown together through Bonding, and packaging a lead to obtain the GaN-based vertical integrated optoelectronic chip shown in the figure 1.
The metal electrodes in the above embodiments may also be replaced by other metal electrodes as defined above, which are not listed here.
The multi-quantum well LED structure and the multi-quantum well PD structure have good luminous efficiency and detection efficiency, and the performance of the device can be adjusted by adjusting the In component. The dislocation density of the sapphire substrate and the GaN material is small. The density of the nanoparticles is close to the dislocation density. The GaN Schottky contact electrode is of the type of Ni, Au, Pt or composite metal material multilayer films of Ni/Au, Ti/Al/Ti/Au and the like, the annealing condition of the electrode can be determined according to the specific metal type, such as the Ni/Au composite electrode, the annealing condition temperature is 400-600 ℃, and the time is 3-15 minutes; for example, the annealing temperature of Ti/Al is 500-700 ℃, and the time is 30 seconds-5 minutes.
The method of the present invention is not limited to the above-described embodiments, and the advantage of the GaN-based vertically integrated optoelectronic chip structure of the present invention over the conventional horizontally integrated waveguide structure is that neither GaN nor sapphire absorbs light emitted from the light source, as determined by the band gap of the material, in the first place. The most important point is that the structure can independently design LED and PD multiple quantum well structures, so that the LED and PD performances respectively reach the optimal performances, which cannot be reached by the traditional horizontal structure. From the perspective of long-term development, when the vertical integrated waveguide is combined with the current horizontal integrated waveguide, a stereoscopic photoelectric interconnection system can be generated, the integration of photoelectric interconnection is facilitated, and the stereoscopic photoelectric interconnection system has potential commercial value.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (9)
1. A GaN-based vertical integrated optoelectronic chip is characterized by comprising a multiple quantum well diode (LED) part and a multiple quantum well detector (PD) part;
the multiple quantum well diode LED section includes: a substrate and a multiple quantum well LED structure;
the multi-quantum well LED structure comprises a GaN epitaxial layer, an n-GaN layer, an InGaN/GaN layer and a p-GaN layer which are sequentially grown on a substrate;
the multiple quantum well detector PD part includes: a substrate and a multiple quantum well PD structure;
the multi-quantum well PD structure comprises a GaN epitaxial layer, an n-GaN layer, an InGaN/GaN layer and a p-GaN layer which are sequentially grown on a substrate;
one surface of the substrate of the LED part of the multiple quantum well diode, on which the device is not grown, and one surface of the substrate of the PD part of the multiple quantum well detector, on which the device is not grown, are bonded together;
the multi-quantum well LED structure and the multi-quantum well PD structure are plated with metal electrodes respectively and packaged with leads.
2. The GaN-based vertically integrated optoelectronic chip of claim 1 wherein the n-GaN is Si doped in GaN material and the p-GaN is Mg doped in GaN material.
3. The GaN-based vertically integrated optoelectronic chip of claim 1 wherein the substrate is sapphire, silicon or silicon carbide.
4. The GaN-based vertically integrated optoelectronic chip of claim 1 wherein the metal electrode is Ni, Au, Pt, Ni/Au, Ti/Al or Ti/Al/Ti/Au.
5. A method for preparing the GaN-based vertically integrated optoelectronic chip as claimed in any of claims 1 to 4, comprising the steps of:
growing a GaN epitaxial layer on a substrate;
growing an n-GaN layer on the GaN epitaxial layer;
growing an InGaN/GaN layer on the n-GaN layer;
step four, performing photoetching and etching after spin-coating photoresist on the InGaN/GaN layer in the step three;
growing a p-GaN layer on the InGaN/GaN layer to complete the preparation of the multi-quantum well LED structure;
step six, repeating the steps one to five to obtain a multi-quantum well PD structure;
polishing and thinning one surfaces of the two substrates, on which the devices are not grown, and then bonding the two substrates together;
and step eight, respectively evaporating metal electrodes on the multi-quantum well LED structure and the multi-quantum well PD structure, and then packaging by leads to complete the preparation of the GaN-based vertical integrated optoelectronic chip.
6. The method for preparing the GaN-based vertically integrated optoelectronic chip of claim 5, wherein an MOCVD technique is used to grow a GaN epitaxial layer, an n-GaN layer, an InGaN/GaN layer or a p-GaN layer.
7. The method of claim 5, wherein the photoresist is a negative photoresist or a positive photoresist with an inversion characteristic in the fourth step.
8. The method as claimed in claim 5, wherein the annealing temperature is 400-600 ℃ and the annealing time is 3-15 minutes when the metal electrode is a Ni/Au composite electrode.
9. The method as claimed in claim 5, wherein the annealing temperature is 500-700 ℃ for 30 seconds-5 minutes when the metal electrode is Ti/Al composite electrode.
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| CN107482031B (en) * | 2017-08-09 | 2020-05-05 | 南京邮电大学 | GaN-based micron-scale LED array and preparation method thereof |
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