CN109462145A - The GaN base elevated duct laser and preparation method of integrated resonance grating microcavity - Google Patents
The GaN base elevated duct laser and preparation method of integrated resonance grating microcavity Download PDFInfo
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- CN109462145A CN109462145A CN201811500232.8A CN201811500232A CN109462145A CN 109462145 A CN109462145 A CN 109462145A CN 201811500232 A CN201811500232 A CN 201811500232A CN 109462145 A CN109462145 A CN 109462145A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
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Abstract
The present invention provides the GaN base elevated duct laser and preparation method of a kind of integrated resonance grating microcavity, the laser includes silicon substrate layer, the epitaxial buffer layer being arranged in the silicon substrate layer, the p-n junction quantum well devices being arranged on the epitaxial buffer layer and optical waveguide, described optical waveguide one end is connected with p-n junction quantum well devices, and the other end is integrated with resonance grating micro-cavity structure.The silicon substrate GaN-based elevated duct laser of the electric pump that the present invention realizes can realize the GaN base elevated duct laser of Wavelength tunable by regulating and controlling micro-cavity structure.The GaN base elevated duct laser of integrated resonance grating microcavity proposed by the present invention can be used for visible light communication, display and sensory field.
Description
Technical field
The invention belongs to information materials and devices field, are related to a kind of GaN base elevated duct of integrated resonance grating microcavity
Laser and preparation method thereof.
Background technique
Nitride material, especially gallium nitride material, refractive index (~2.5) with higher, in near-infrared and visible light
Wave band is transparent, is a kind of optical material haveing excellent performance, and application prospect is extensive.The nitride material being grown on HR-Si substrate
Material, using deep silicon etching technology, can solve the stripping problem of silicon substrate and nitride material, realizes that hanging nitride is thin
Film；Using the big refractive index difference between nitride and air, the nitridation for having very strong restriction effect to light field may be implemented
Object wave is led and micro-nano photonic device, to realize that micromation, highdensity micro-nano photonic device provide physical basis.
Summary of the invention
Technical problem: the present invention, which provides one kind, may be implemented Wavelength tunable, and thickness is adjustable, reduces thick film nitride material
The GaN base elevated duct laser of the integrated resonance grating microcavity of internal optical losses, while a kind of preparation of laser being provided
Method.
Technical solution: the GaN base elevated duct laser of integrated resonance grating microcavity of the invention, with silica-based nitride crystalline substance
Piece is carrier, including silicon substrate layer, the epitaxial buffer layer being arranged in the silicon substrate layer, is arranged on the epitaxial buffer layer
N-GaN layer, the p-n junction quantum well devices and optical waveguide on the n-GaN layer and to link together are set；In the n-
There is the ladder-like table top etched in GaN layer upper surface, and the ladder-like table top includes following table and appearing on the stage on following table
Face, the p-n junction quantum well devices include the p-n junction being arranged on upper table surface, the n- electrode being arranged on following table, setting exist
P- electrode above p-n junction, the p-n junction include the n-GaN layer for being sequentially connected setting from bottom to up, InGaN/GaN Quantum Well
Layer and p-GaN layer, the p- electrode are arranged in p-GaN layer, and optical waveguide is arranged on following table, one end and p-n junction Quantum Well
The n-GaN layer of device connects, and the other end is etched with resonance grating；The position with hanging region is provided with below n-GaN layers described
Set face and through silicon substrate layer, the back cavity of epitaxial buffer layer to n-GaN layer bottom surface so that p-n junction quantum well devices with
Optical waveguide is hanging, and the hanging region includes a part of optical waveguide, a part of p- electrode and n- electrode.
Further, in the GaN base elevated duct laser of integrated resonance grating microcavity of the invention, n- electrode includes n-
The n- contact conductor area that electrodes conduct area is connect with n- electrodes conduct area one end, the p- electrode include hanging p- electrode
Area, the p- electrodes conduct area being connect with the hanging p- electrode district, the p- contact conductor area being connect with p- electrodes conduct area,
The hanging p- electrode district is adjacent with optical waveguide, and opposite with the other end in n- electrodes conduct area.
Further, in the GaN base elevated duct laser of integrated resonance grating microcavity of the invention, in hanging region,
One end that a part of p- electrode includes hanging p- electrode district, is connect in p- electrodes conduct area with hanging p- electrode district, n- electrode
A part include one end opposite with hanging p- electrode district in n- electrodes conduct area.
Further, in the GaN base elevated duct laser of integrated resonance grating microcavity of the invention, the optical waveguide is
Completely hanging rectangular optical waveguide.
Further, in the GaN base elevated duct laser of integrated resonance grating microcavity of the invention, it is desirable that can change
The structural parameters of resonance grating microcavity integrate different resonance grating microcavitys, regulate and control microcavity, realize the silicon substrate GaN of Wavelength tunable
Laser.
The method of the GaN base elevated duct laser for preparing above-mentioned integrated resonance grating microcavity of the invention, including it is as follows
Step:
(1) attenuated polishing is carried out to silicon substrate layer after silica-based nitride wafer back；
(2) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, using lithography alignment technology in photoresist
N-GaN stepped area is defined on layer, the n-GaN stepped area includes following table and upper table surface；
(3) reactive ion beam etching (RIBE) n-GaN stepped area is used；Residual photoresist is removed, ladder-like table top is obtained, is located at
The InGaN/GaN quantum well layer and p-GaN layer of the p-n junction quantum well devices of upper table surface；
(4) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, p-n is defined using lithography alignment technology
Knot quantum well devices are located at p- electrode window through ray region in p-GaN layer, positioned at the n- electrode window through ray region of n-GaN layers of following table；
(5) Ni/Au is deposited respectively in p- electrode window through ray region and n- electrode window through ray region, forms Ohmic contact, it is real
Existing p- electrode and n- electrode remove after residual photoresist to get arriving p-n junction quantum well devices；
(6) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, light wave is defined using lithography alignment technology
Lead 8；
(7) reactive ion beam etch nitride layer from the top down is used, 2.5-3 microns of etching depth, forms waveguiding structure
8；
(8) it is protected in silica-based nitride chip top layer gluing, prevents injured surface device in etching process, nitrogenized in silicon substrate
The one layer photoresist layer of silicon substrate layer lower surface spin coating of object chip defines one and is aligned and covers using behind technique of alignment
The behind etching window in hanging region；
It (9) will by behind etching window using behind deep silicon etching technology using epitaxial buffer layer as etching barrier layer
The silicon substrate layer runs through the lower surface for being etched to epitaxial buffer layer, forms a back cavity；
(10) lithographic technique is thinned using nitride behind, epitaxial buffer layer and n-GaN layers are nitrogenized from the bottom up
Object reduction processing obtains completely hanging optical waveguide；
(11) residual photoresist is removed, using focused-ion-beam lithography technology, is defined simultaneously at the free end of optical waveguide
Resonance grating is etched, the GaN base elevated duct laser of integrated resonance grating microcavity is obtained.
Further, in the method for the present invention, optical waveguide one end defined in the step (6) and p-n junction quantum well devices
N-GaN layer connection.
Further, in the method for the present invention, the resonance grating etched in the step (11) is located at the optical waveguide other end.
Further, in the method for the present invention, the n- electrode realized in step (5) includes n- electrodes conduct area and n- electricity
The n- contact conductor area of pole conduction region one end connection, p- electrode include hanging p- electrode district, connect with the hanging p- electrode district
P- electrodes conduct area, the p- contact conductor area that is connect with p- electrodes conduct area, the hanging p- electrode district and optical waveguide
It is adjacent and opposite with the other end in n- electrodes conduct area.
Further, in the method for the present invention, in the hanging region in the step (8), a part of p- electrode includes outstanding
The one end connecting on empty p- electrode district, p- electrodes conduct area with hanging p- electrode district, a part of n- electrode include that n- electrode is led
One end opposite with hanging p- electrode district in electric area.
In preparation method of the invention, p- electrode window through ray region defined in the step (5) includes sequentially connected outstanding
Empty p- electrode district window, p- electrodes conduct area's window and p- contact conductor area window, n- electrode window through ray region include mutual
The n- electrodes conduct area's window and n- contact conductor area window of connection.
In the present invention, nitride device layers form the hanging optical waveguide of integrated resonance grating microcavity, integrate p-n junction Quantum Well
Device realizes electric pump GaN base elevated duct laser；The present invention claims focused-ion-beam lithography technology is utilized, in optical waveguide
Upper processing resonance grating microcavity forms micro-cavity structure and matches the luminescent spectrum of p-n junction quantum well devices, obtains integrated harmonic light
The GaN base elevated duct laser of grid microcavity；Laser of the present invention, it is desirable that can change resonance grating microcavity structural parameters or
Different resonance grating microcavitys are integrated, regulates and controls microcavity, realizes the silicon substrate GaN laser of Wavelength tunable.
The present invention utilizes focused-ion-beam lithography technology, forms the harmonic light for being integrated in elevated duct and Quantum Well diode
Grid microcavity realizes the silicon substrate GaN-based elevated duct laser of electric pump, thus it is possible to vary the structural parameters or collection of resonance grating microcavity
At different resonance grating microcavitys, regulates and controls micro-cavity structure, realize the GaN base elevated duct laser of Wavelength tunable.
The utility model has the advantages that compared with prior art, the present invention having the advantage that
(1) present invention is the gallium nitride p-n junction quantum well devices being grown on silicon materials, and being adjusted by Quantum Well can bandwidth
Degree can make to adjust its luminescence peak, and technology of preparing is convenient for integrating with silicon microelectric technique, realize integrated silicon-based opto-electronic device.
(2) present invention is by using focused-ion-beam lithography skill in the optical waveguide end being connected with p-n junction quantum well devices
Art defines nanometer grating structure, forms resonant cavity.The light that p-n junction quantum well devices issue is transmitted by optical waveguide, in optical waveguide
Lasing is shaken at the resonant cavity of end, realizes laser.Conventional laser needs grow reflecting mirror on symmetrical two end faces, make
Standby processing step is complicated, and optical absorption loss is big.
(3) present invention realizes resonance by etching resonance grating in the optical waveguide end being connected with p-n junction quantum well devices
Chamber.The resonance of continuous wavelength may be implemented in grating pair arrangement parameter sensitivity, fine tuning parameter.The luminous spectrum of p-n junction quantum well devices
Resonant cavity for Gauss spectrum, transmitting optical transport to waveguide end with certain spectral region can by adjusting grating parameter
To realize the silicon substrate GaN laser of Wavelength tunable.Conventional laser wave band is single, and emphasis depends on the intrinsic luminous spectrum of material
Peak value.
(4) refractive index of silicon materials is greater than GaN material, and light can scatter in silicon substrate when transmitting in GaN base waveguide, this hair
Bright that completely hanging rectangular optical waveguide structure is realized by two-sided processing technology, the absorption to emergent light for solving silicon materials dissipates
Penetrate problem.Meanwhile nitride film is thicker, the mode of support is more, and it is big that high-order is molded as luminous energy loss.The present invention passes through progress
Hanging nitride film behind thinning technique, obtains the adjustable ultra-thin silicon substrate GaN laser of thickness, reduces thick film nitride
The internal optical losses of material.
Detailed description of the invention
Fig. 1 is the schematic top plan view of the GaN base elevated duct laser of the integrated resonance grating microcavity of the present invention；
Fig. 2 is the schematic side view of the GaN base elevated duct laser of the integrated resonance grating microcavity of the present invention；
Fig. 3 is the schematic elevation view of the GaN base elevated duct laser of the integrated resonance grating microcavity of the present invention
Fig. 4 is the preparation technology flow chart of the GaN base elevated duct laser of the integrated resonance grating microcavity of the present invention.
Have in figure: 1- silicon substrate layer；2- epitaxial buffer layer；3-n-GaN layers；4-InGaN/GaN quantum well layer；5-p-GaN
Layer；6-n- electrode；61-n- electrodes conduct area；62-n- contact conductor area；7-p- electrode；The hanging p- electrode district of 71-；72-p- electricity
Pole conduction region；73-p- contact conductor area；8- optical waveguide；9- resonance grating；10- back cavity.
Specific embodiment
Technical solution of the present invention is described in further detail with embodiment with reference to the accompanying drawings of the specification:
Fig. 1 gives the structure schematic top plan view of the GaN base elevated duct laser of the integrated resonance grating microcavity of the present invention.
The GaN base elevated duct laser of the integrated resonance grating microcavity realizes p-n quantum well device using silica-based nitride chip as carrier
Part connects with the elevated duct for being integrated with resonant cavity.
The structure that Fig. 2, Fig. 3 give the GaN base elevated duct laser of the integrated resonance grating microcavity of the present invention survey view with
Schematic elevation view.This integrates the GaN base elevated duct laser of resonance grating microcavity using silica-based nitride chip as carrier, including
Silicon substrate layer 1, the epitaxial buffer layer 2 being arranged in the silicon substrate layer 1, the n-GaN layer being arranged on the epitaxial buffer layer,
The p-n junction quantum well devices and optical waveguide 8 on the n-GaN layer 3 and to link together are set；The table on the n-GaN layer 3
There is the ladder-like table top etched in face, and the ladder-like table top includes following table and the upper table surface on following table, the p-n
Knot quantum well devices include the p-n junction being arranged on upper table surface, the n- electrode 6 being arranged on following table, are arranged on p-n junction
P- electrode 7, the p-n junction includes n-GaN layer 3, InGaN/GaN quantum well layer 4 and the p- for being sequentially connected setting from bottom to up
GaN layer 5, the p- electrode 7 are arranged in p-GaN layer 5, and optical waveguide 8 is arranged on following table, one end and p-n junction quantum well device
The n-GaN layer 3 of part connects, and the other end is etched with resonance grating 9；The position with hanging region is provided with below the n-GaN layer 3
It sets face and runs through silicon substrate layer 1, the back cavity 10 of epitaxial buffer layer 2 to 3 bottom surface of n-GaN layer, so that p-n junction quantum well device
Part and optical waveguide 8 are hanging, and the hanging region includes a part of optical waveguide 8, a part of p- electrode 7 and n- electrode 6.
The present invention integrates in a kind of embodiment of the GaN base elevated duct laser of resonance grating microcavity, and n- electrode 6 includes
The n- contact conductor area 62 that n- electrodes conduct area 61 is connect with 61 one end of n- electrodes conduct area, the p- electrode 7 include outstanding
Empty p- electrode district 71, the p- electrodes conduct area 72 connecting with the hanging p- electrode district 71 connect with p- electrodes conduct area 72
The p- contact conductor area 73 connect, the hanging p- electrode district 71 is adjacent with optical waveguide 8, and the other end with n- electrodes conduct area 61
Relatively.
The present invention integrates in a kind of embodiment of the GaN base elevated duct laser of resonance grating microcavity, in hanging region,
One end that a part of p- electrode 7 includes hanging p- electrode district 71, is connect in p- electrodes conduct area 72 with hanging p- electrode district 71,
A part of n- electrode 6 includes one end opposite with hanging p- electrode district 71 in n- electrodes conduct area 61.
In the GaN base elevated duct laser of integrated resonance grating microcavity in the present invention, deep silicon etching technology, solution are utilized
The certainly stripping problem of silicon substrate layer 1 realizes hanging Quantum Well diode and fiber waveguide device；Further utilize iii-v
Nitride layer 2 is thinned in material sense coupling technology from behind, realizes ultra-thin hanging resonance photonic device；Again
Resonance grating is defined and etches in optical waveguide end using focused-ion-beam lithography technology, it can be by changing resonance grating microcavity
Structural parameters or integrate different resonance grating microcavitys, regulate and control microcavity, realize the silicon substrate GaN laser of Wavelength tunable.
It is as shown in Figure 4: the side of the GaN base elevated duct laser for preparing above-mentioned integrated resonance grating microcavity of the invention
Method includes the following steps:
(1) attenuated polishing is carried out to silicon substrate layer after silica-based nitride wafer back；
(2) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, using lithography alignment technology in photoresist
N-GaN stepped area is defined on layer, the n-GaN stepped area includes following table and upper table surface；
(3) reactive ion beam etching (RIBE) n-GaN stepped area is used；Residual photoresist is removed, ladder-like table top is obtained, is located at
The InGaN/GaN quantum well layer and p-GaN layer of the p-n junction quantum well devices of upper table surface；
(4) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, p-n is defined using lithography alignment technology
Knot quantum well devices are located at p- electrode window through ray region in p-GaN layer, positioned at the n- electrode window through ray region of n-GaN layers of following table；
(5) Ni/Au is deposited respectively in p- electrode window through ray region and n- electrode window through ray region, forms Ohmic contact, it is real
Existing p- electrode and n- electrode remove after residual photoresist to get arriving p-n junction quantum well devices；
(6) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, light wave is defined using lithography alignment technology
It leads；
(7) reactive ion beam etch nitride layer from the top down is used, 2.5-3 microns of etching depth, forms waveguiding structure；
(8) it is protected in silica-based nitride chip top layer gluing, prevents injured surface device in etching process, nitrogenized in silicon substrate
The one layer photoresist layer of silicon substrate layer lower surface spin coating of object chip defines one and is aligned and covers using behind technique of alignment
P- electrode district, p- electrodes conduct area, n- electrodes conduct area and optical waveguide behind etching window；
It (9) will by behind etching window using behind deep silicon etching technology using epitaxial buffer layer as etching barrier layer
The silicon substrate layer runs through the lower surface for being etched to epitaxial buffer layer, forms a cavity；
(10) lithographic technique is thinned using nitride behind, epitaxial buffer layer and n-GaN layers are nitrogenized from the bottom up
Object reduction processing obtains completely hanging rectangular optical waveguide；
(11) residual photoresist is removed, using focused-ion-beam lithography technology, is defined simultaneously at the free end of optical waveguide
Resonance grating is etched, the GaN base elevated duct laser of integrated resonance grating microcavity is obtained.
Above-described embodiment is only the preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill of the art
For personnel, without departing from the principle of the present invention, several improvement and equivalent replacement can also be made, these are to the present invention
Claim improve with the technical solution after equivalent replacement, each fall within protection scope of the present invention.
Claims (8)
1. a kind of GaN base elevated duct laser of integrated resonance grating microcavity, which is characterized in that the laser is nitrogenized with silicon substrate
Object chip is carrier, including silicon substrate layer (1), the epitaxial buffer layer (2) being arranged on the silicon substrate layer (1), is arranged in institute
The p-n junction Quantum Well for stating the n-GaN layer (3) on epitaxial buffer layer (2), being arranged on n-GaN layers described (3) and linking together
Device and optical waveguide (8)；There is the ladder-like table top etched in n-GaN layers described (3) upper surface, the ladder-like table top includes
Following table and the upper table surface on following table, the p-n junction quantum well devices include the p-n junction being arranged on upper table surface, set
Set the n- electrode (6) on following table, the p- electrode (7) being arranged in above p-n junction, the p-n junction includes from bottom to up successively
N-GaN layer (3), InGaN/GaN quantum well layer (4) and the p-GaN layer (5) of setting are connected, the p- electrode (7) is arranged in p-
In GaN layer (5), optical waveguide (8) is arranged on following table, and one end is connect with the n-GaN of p-n junction quantum well devices layer (3), another
End is etched with resonance grating (9)；It is provided with below n-GaN layers described (3) and is served as a contrast with the position face and through-silicon in hanging region
The back cavity (10) of bottom (1), epitaxial buffer layer (2) to n-GaN layers of (3) bottom surface, so that p-n junction quantum well devices and light wave
Lead (8) vacantly, the hanging region includes a part of optical waveguide (8), a part of p- electrode (7) and n- electrode (6).
2. requiring the GaN base elevated duct laser of the integrated resonance grating microcavity according to claim 1, feature exists
It include that the n- electrode that connect with n- electrodes conduct area (61) one end of n- electrodes conduct area (61) draws in, the n- electrode (6)
Line area (62), the p- electrode (7) includes hanging p- electrode district (71), the p- electrode that connect with the hanging p- electrode district (71)
Conduction region (72), the p- contact conductor area (73) being connect with p- electrodes conduct area (72), the hanging p- electrode district (71)
It is adjacent with optical waveguide (8) and opposite with the other end in n- electrodes conduct area (61).
3. requiring the GaN base elevated duct laser of the integrated resonance grating microcavity according to claim 2, feature exists
In, in the hanging region, a part of p- electrode (7) include hanging p- electrode district (71), in p- electrodes conduct area (72) with
One end of hanging p- electrode district (71) connection, a part of n- electrode (6) include electric with hanging p- in n- electrodes conduct area (61)
The opposite one end in polar region (71).
4. a kind of method for the GaN base elevated duct laser for preparing claim 1,2 or the 3 integrated resonance grating microcavitys,
It is characterized in that, method includes the following steps:
(1) attenuated polishing is carried out to silicon substrate layer (1) after silica-based nitride wafer back；
(2) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, using lithography alignment technology on photoresist layer
N-GaN stepped area is defined, the n-GaN stepped area includes following table and upper table surface；
(3) reactive ion beam etching (RIBE) n-GaN stepped area is used；Residual photoresist is removed, obtains ladder-like table top, positioned at appearing on the stage
The InGaN/GaN quantum well layer (4) and p-GaN layer (5) of the p-n junction quantum well devices in face；
(4) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, p-n junction amount is defined using lithography alignment technology
Sub- trap device is located at the p- electrode window through ray region on p-GaN layer (5), the n- electrode window mouth region positioned at n-GaN layers of (3) following table
Domain；
(5) Ni/Au is deposited respectively in p- electrode window through ray region and n- electrode window through ray region, forms Ohmic contact, realize p-
Electrode (7) and n- electrode (6) remove after residual photoresist to get arriving p-n junction quantum well devices；
(6) it is uniformly coated with a layer photoresist in silica-based nitride upper wafer surface, optical waveguide is defined using lithography alignment technology
(8)；
(7) reactive ion beam etch nitride layer from the top down is used, 2.5-3 microns of etching depth, is formed waveguiding structure (8)；
(8) it is protected in silica-based nitride chip top layer gluing, prevents injured surface device in etching process, in silica-based nitride crystalline substance
The one layer photoresist layer of silicon substrate layer (1) lower surface spin coating of piece defines one and is aligned and covers outstanding using behind technique of alignment
The behind etching window of empty region；
It (9) will be described by behind etching window using behind deep silicon etching technology using epitaxial buffer layer as etching barrier layer
Silicon substrate layer runs through the lower surface for being etched to epitaxial buffer layer (2), forms a back cavity (10)；
(10) lithographic technique is thinned using nitride behind, from the bottom up to epitaxial buffer layer (2) and n-GaN layers (3) progress nitrogen
Compound reduction processing obtains completely hanging optical waveguide (8)；
(11) residual photoresist is removed, using focused-ion-beam lithography technology, defines and carves at the free end of optical waveguide (8)
It loses resonance grating (9), obtains the GaN base elevated duct laser of integrated resonance grating microcavity.
5. a kind of method for the GaN base elevated duct laser for preparing integrated resonance grating microcavity according to claim 4,
It is characterized in that, optical waveguide (8) one end defined in the step (6) is connect with the n-GaN of p-n junction quantum well devices layer (3).
6. a kind of method for the GaN base elevated duct laser for preparing integrated resonance grating microcavity according to claim 5,
It is characterized in that, the resonance grating (9) etched in the step (11) is located at optical waveguide (8) other end.
7. according to a kind of side for the GaN base elevated duct laser for preparing integrated resonance grating microcavity of claim 4,5 or 6
Method, which is characterized in that the n- electrode (6) realized in the step (5) includes that n- electrodes conduct area (61) is led with the n- electrode
The n- contact conductor area (62) of electric area (61) one end connection, p- electrode (7) include hanging p- electrode district (71) and the hanging p-
The p- electrodes conduct area (72) of electrode district (71) connection, the p- contact conductor area being connect with p- electrodes conduct area (72)
(73), the hanging p- electrode district (71) is adjacent with optical waveguide (8) and opposite with the other end in n- electrodes conduct area (61).
8. according to a kind of side for the GaN base elevated duct laser for preparing integrated resonance grating microcavity of claim 4,5 or 6
Method, which is characterized in that in the hanging region in the step (8), a part of p- electrode (7) includes hanging p- electrode district
(71), one end connecting on p- electrodes conduct area (72) with hanging p- electrode district (71), a part of n- electrode (6) include n- electricity
One end opposite with hanging p- electrode district (71) on pole conduction region (61).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112034550A (en) * | 2020-08-26 | 2020-12-04 | 华东师范大学重庆研究院 | Silicon nitride phased array chip based on suspended waveguide structure |
| CN112134140A (en) * | 2020-09-07 | 2020-12-25 | 南京邮电大学 | Electrically-controlled active coupled cavity laser |
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| CN112134140A (en) * | 2020-09-07 | 2020-12-25 | 南京邮电大学 | Electrically-controlled active coupled cavity laser |
| CN112134140B (en) * | 2020-09-07 | 2021-09-17 | 南京邮电大学 | Electrically-controlled active coupled cavity laser |
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