CN108133992B - Optical pumping resonance enhances upside-down mounting red-light LED device and preparation method thereof - Google Patents
Optical pumping resonance enhances upside-down mounting red-light LED device and preparation method thereof Download PDFInfo
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- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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Abstract
The invention discloses a kind of optical pumping resonance enhancing upside-down mounting red-light LED devices and preparation method thereof, which includes: the red-light LED quantum well structure with resonant cavity；And exit facet is bonded to the blue LED flip chip of the red-light LED quantum well structure plane of incidence；Wherein, the blue photons which issues excite the red-light LED quantum well structure, and the red-light LED quantum well structure is made to issue red photons.Upside-down mounting red-light LED device is to absorb the photon optical pumping that blue-light LED chip issues to shine in the present invention, and unconventional electrical pumping shines, avoid the epitaxial growth technology and chip preparing process of Conventional flip red-light LED complexity, reduce process complexity, device reliability is improved, and shortens chip manufacturing process.
Description
Technical field
The present invention relates to optoelectronic device technology fields, enhance upside-down mounting red-light LED device more particularly to a kind of optical pumping resonance
Part and preparation method thereof.
Background technique
Red-light LED since the advent of the world has the development course in more than 40 years so far.Red-light LED currently on the market is most of
Be using MOCVD on gaas substrates epitaxial growth AlGaInP quaternary system material and obtain.The internal quantum efficiency of red-light LED
90% or more is had reached, Material growth technology is quite mature.
As LED shows gradually emergence in recent years, the demand to RGB LED also increases sharply in the market, especially right
The demand of small size LED is very vigorous.Realize that the high definition of LED screen is shown, key technology is to reduce the light emitting pixel of display screen,
Reduce the chip size and arrangement spacing of RGB three-primary color LED；Relative to traditional formal dress chip package process, fallen using RGB
Cartridge chip and directly chip is welded on pcb board by flip chip bonding or eutectic Welding, will reduce significantly and beat shared by gold thread
Space, can further reduce chip chamber away from.
Different from the blue green light flip LED of GaN base, the red-light LED flip chip fabrication process of AlGaInP base is sufficiently complex
And it is difficult to obtain high yields.Red-light LED be on opaque GaAs substrate the luminescent materials such as extension GaInP preparation and
At, therefore to prepare the red LED chip of upside-down mounting, it is necessary to first the face p GaP is bonded on new substrate, then GaAs substrate is gone
Remove, and how to accomplish by the face the p GaP high-performance of coated with metallic reflection, large area is equably bonded on new substrate then
An always problem being faced of upside-down mounting red-light LED.
Summary of the invention
(1) technical problems to be solved
In view of this, it is a primary object of the present invention to propose a kind of optical pumping resonance enhancing upside-down mounting red-light LED device and its
Preparation method reduces process complexity to avoid complicated technology needed for electrical pumping device, improves device reliability, and shorten
Chip manufacturing process.
(2) technical solution
In order to achieve the above objectives, according to one embodiment of present invention, the present invention provides a kind of enhancings of optical pumping resonance to fall
Fill red-light LED device, comprising: the red-light LED quantum well structure 1 with resonant cavity；And exit facet is bonded to the red-light LED quantum
The blue LED flip chip 2 of 1 plane of incidence of well structure；Wherein, the blue photons which issues excite this red
Light LED quantum well structure 1 makes the red-light LED quantum well structure 1 issue red photons.
In one embodiment of the invention, the red-light LED quantum well structure 1 includes: bottom Ta2O5/SiO2Prague
Reflecting mirror 5；It is formed in bottom Ta2O5/SiO2AlGaInP multiple quantum wells 4 on Bragg mirror 5；It is formed in this
AlGaInP phase adjustment layer 6 on AlGaInP multiple quantum wells 4；And it is formed on the AlGaInP phase adjustment layer 6
Top AlAs/AlGaAs Bragg mirror 3.
In one embodiment of the invention, the bottom Ta2O5/SiO2Bragg mirror 5 includes: to hand in the multipair period
For the Ta of arrangement2O5/SiO2Dielectric layer, wherein Ta2O5And SiO2Physical thickness be respectively λ0/ 4n, wherein λ0It is quantum well radiation
Central wavelength, n are respectively Ta2O5And SiO2Refractive index.
In one embodiment of the invention, the AlGaInP multiple quantum wells 4 includes: that group is divided into AlGaInP/AlGaInP
Multipair Quantum Well periodic structure, the red photons system which is issued by adjust the AlGaInP
The component of Al and Ga obtains in multiple quantum wells 4, and central wavelength is continuously adjusted from 570nm to 650nm；Red-light LED active area it is total
Thickness is by AlGaInP to the absorption coefficient ≈ 10 of blue light 450-470nm wave band4~105cm-1Estimation obtains, the thickness of active area
Degree is in 400nm between 600nm.
In one embodiment of the invention, the AlGaInP phase adjustment layer 6 is certain thickness AlGaInP extension
Layer, for adjusting Resonant Intake System, the feux rouges for issuing Quantum Well meets condition of resonance.
In one embodiment of the invention, the top AlAs/AlGaAs Bragg mirror 3 includes: the multipair period
The AlAs/AlGaAs dielectric layer of arrangement, wherein the physical thickness of AlAs and AlGaAs is respectively λ0/ 4n, wherein λ0It is Quantum Well hair
Center wavelength of light, n are respectively the refractive index of AlAs and AlGaAs.
In one embodiment of the invention, the blue LED flip chip 2 includes: Sapphire Substrate 7；In indigo plant treasured
N-GaN8, GaN Quantum Well 9 and p-GaN10 successively grown on stone lining bottom 7；And it is formed in the blue LED flip chip 2 together
The p-electrode and n-electrode of side；Wherein blue photons are emitted from the Sapphire Substrate 7 after thinned grinding and polishing.
In order to achieve the above objectives, according to another embodiment of the invention, the present invention provides a kind of enhancings of optical pumping resonance
The preparation method of upside-down mounting red-light LED device, this method comprises: preparing the red-light LED quantum well structure 1 with resonant cavity respectively and falling
Fill blue-light LED chip 2；And the red-light LED quantum well structure 1 with resonant cavity and 2 back bonding of blue LED flip chip are existed
Together.
In one embodiment of the invention, the red-light LED quantum well structure 1 includes: bottom Ta2O5/SiO2Prague
Reflecting mirror 5；It is formed in bottom Ta2O5/SiO2AlGaInP multiple quantum wells 4 on Bragg mirror 5；It is formed in this
AlGaInP phase adjustment layer 6 on AlGaInP multiple quantum wells 4；And it is formed on the AlGaInP phase adjustment layer 6
Top AlAs/AlGaAs Bragg mirror 3.
In one embodiment of the invention, the blue LED flip chip 2 includes: Sapphire Substrate 7；In indigo plant treasured
N-GaN8, GaN Quantum Well 9 and p-GaN10 successively grown on stone lining bottom 7；And it is formed in the blue LED flip chip 2 together
The p-electrode and n-electrode of side；Wherein blue photons are emitted from the Sapphire Substrate 7 after thinned grinding and polishing.
(3) beneficial effect
It can be seen from the above technical proposal that optical pumping resonance enhancing upside-down mounting red-light LED device of the present invention and preparation method thereof
It has the advantages that
1, optical pumping resonance enhancing upside-down mounting red-light LED device provided by the invention and preparation method thereof, upside-down mounting red-light LED device
It is the chip preparing process for being shone by the luminous and unconventional electrical pumping of optical pumping, therefore avoiding complicated upside-down mounting red-light LED, greatly
Chip manufacturing process is simplified greatly, has the advantages that simple process and low cost and yields are high；
2, optical pumping resonance enhancing upside-down mounting red-light LED device provided by the invention and preparation method thereof, red quantum well structure
Relative to traditional red-light LED, thickness is obviously reduced, the former only has the thickness of the latter about 1/10th, therefore shortens feux rouges
The epitaxial process of LED effectively reduces extension cost；
3, optical pumping resonance enhancing upside-down mounting red-light LED device provided by the invention and preparation method thereof, upside-down mounting red-light LED device
With cavity resonator structure, it can make the feux rouges issued have smaller half-peak breadth compared to the feux rouges that regular quantum trap issues, together
When luminous intensity can also greatly promote；
4, optical pumping resonance enhancing upside-down mounting red-light LED device provided by the invention and preparation method thereof, upside-down mounting red-light LED device
It due to using optical pumping to shine, is compared with tradition electrical pumping red-light LED device, there is no what is generated with injected current density variation
Wave length shift, also there is no the temperature drift generated because using temperature change, applying will be more stable in such as display field
With it is reliable.
Detailed description of the invention
To further illustrate technology contents of the invention, below in conjunction with example and attached drawing, detailed description are as follows:
Fig. 1 is the structural schematic diagram for enhancing upside-down mounting red-light LED device according to the optical pumping resonance of the embodiment of the present invention；
Fig. 2 is the method flow that optical pumping resonance enhances upside-down mounting red-light LED device in manufacture Fig. 1 according to the embodiment of the present invention
Figure.
[main element]
Red-light LED quantum well structure of the 1- with resonant cavity；2- blue LED flip chip；
AlAs/AlGaAs Bragg mirror at the top of 3-；4-AlGaInP multiple quantum wells；
The bottom 5- Ta2O5/SiO2Bragg mirror；6-AlGaInP phase adjustment layer；
7- Sapphire Substrate；8-n-GaN；9-GaN Quantum Well；
10-p-GaN；11-p, n metal electrode
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
As shown in FIG. 1, FIG. 1 is the structures of the optical pumping resonance enhancing upside-down mounting red-light LED device according to the embodiment of the present invention to show
It is intended to, it includes: the red-light LED quantum well structure 1 with resonant cavity which, which enhances upside-down mounting red-light LED device,；And outgoing
Face is bonded to the blue LED flip chip 2 of 1 plane of incidence of red-light LED quantum well structure；Wherein, the blue LED flip chip 2
The blue photons of sending excite the red-light LED quantum well structure 1, and the red-light LED quantum well structure 1 is made to issue red photons.
In Fig. 1, red-light LED quantum well structure 1 includes: bottom Ta2O5/SiO2Bragg mirror 5；It is formed in the bottom
Ta2O5/SiO2AlGaInP multiple quantum wells 4 on Bragg mirror 5；It is formed on the AlGaInP multiple quantum wells 4
AlGaInP phase adjustment layer 6；And it is formed in top Prague AlAs/AlGaAs on the AlGaInP phase adjustment layer 6
Reflecting mirror 3.
Wherein, bottom Ta2O5/SiO2Bragg mirror 5 includes: alternately arranged Ta of multipair period2O5/SiO2Medium
Layer, wherein Ta2O5And SiO2Physical thickness be respectively λ0/ 4n, wherein λ0It is quantum well radiation central wavelength, n is respectively Ta2O5
And SiO2Refractive index.
AlGaInP multiple quantum wells 4 includes: the multipair Quantum Well periodic structure that group is divided into AlGaInP/AlGaInP, the feux rouges
The red photons system that LED quantum well structure 1 is issued is obtained by adjusting the component of Al and Ga in the AlGaInP multiple quantum wells 4,
Central wavelength is continuously adjusted from 570nm to 650nm；The overall thickness of red-light LED active area is by AlGaInP to blue light 450-
The absorption coefficient ≈ 10 of 470nm wave band4~105cm-1Estimation obtains, and the thickness of active area is in 400nm between 600nm.
AlGaInP phase adjustment layer 6 is that certain thickness AlGaInP epitaxial layer for adjusting Resonant Intake System makes Quantum Well
The feux rouges of sending meets condition of resonance.
Top AlAs/AlGaAs Bragg mirror 3 includes: the AlAs/AlGaAs dielectric layer of multipair periodic arrangement, wherein
The physical thickness of AlAs and AlGaAs is respectively λ0/ 4n, wherein λ0Quantum well radiation central wavelength, n be respectively AlAs and
The refractive index of AlGaAs.
In Fig. 1, blue LED flip chip 2 includes: Sapphire Substrate 7；The n- successively grown in the Sapphire Substrate 7
GaN8, GaN Quantum Well 9 and p-GaN10；And it is formed in the blue LED flip chip 2 ipsilateral p-electrode and n-electrode；Wherein
Blue photons are emitted from the Sapphire Substrate 7 after thinned grinding and polishing.
Structural representation based on the optical pumping resonance enhancing upside-down mounting red-light LED device shown in FIG. 1 according to the embodiment of the present invention
Figure, Fig. 2 shows the method flows for enhancing upside-down mounting red-light LED device according to optical pumping resonance in manufacture Fig. 1 of the embodiment of the present invention
Figure, this method comprises: preparing red-light LED quantum well structure and the blue LED flip chip with resonant cavity respectively；And it will be with humorous
The red-light LED quantum well structure of vibration chamber is together with blue LED flip chip back bonding.
The method of optical pumping resonance enhancing upside-down mounting red-light LED device in manufacture Fig. 1 shown in Fig. 2 according to the embodiment of the present invention
Flow chart, specifically includes the following steps:
Step 1: grow tens nanometers of GaAs buffer layer on gaas substrates using MOCVD, tens nanometers of regrowth
Ga0.5In0.5P etch stop layer, the stop-layer as subsequent wet removal GaAs substrate；
Step 2: using 6 to 8 pairs of quarter-waves of MOCVD alternating growth (being determined by Quantum Well center emission wavelength)
Al0.5Ga0.5As and AlAs material, as top mirror (thus face goes out light after substrate desquamation, therefore claims top mirror)；
Step 3: then growing the (Al of tens nanometer0.5Ga0.5)0.5In0.5P is as phase adjustment layer, it is therefore an objective to make resonance
Chamber resonance wavelength is consistent with quantum well radiation wavelength；
Step 4: then growing tens of to (Al0.5Ga0.5)0.5In0.5P/(Al0.1Ga0.9)0.5In0.5P (5nm/5nm) conduct
Quantum well active district, overall thickness is between 400nm to 600nm, it is therefore an objective to absorb most blue lights；
Step 5:MOCVD growth phase terminates, take out epitaxial wafer, using DBR vacuum coating equipment on above-mentioned epitaxial layer after
Continuous vapor deposition ten is several to quarter-wave Ta2O5/SiO2Dielectric layer is as lower reflecting mirror；
Step 6: a piece of blue LED flip chip for being ready for the techniques such as electrode is got out, by reducing thin of sapphire substrate；
Step 7: proper silica gel (1~2 μm) in spin coating on a sapphire substrate, by the Ta of feux rouges epitaxial wafer2O5/SiO2It is situated between
Matter DBR placed face down is pasted on silica gel, it is bonded together with Sapphire Substrate using bonder, bonding temperature is optional
150 degrees Celsius, moderate pressure.After silica gel adheres jail, epitaxial wafer taking-up is cooled to room temperature within about 1 hour；
Step 8: above-mentioned coherent two epitaxial wafers are put into a certain proportion of NH3∶H2O2In mixed solution, this is molten
Liquid alternative falls GaAs substrate etching without corroding other dielectric layers of chip.After GaAs substrate etching is complete, until GaInP layers rotten
Erosion stops；
Step 9: the epitaxial wafer after taking out substrate removal in solution is put into dilute hydrochloric acid after deionized water is cleaned and dried up
Solution rinses several seconds, removes GaInP layers, that exposing surface is Al at this time0.5Ga0.5As/AlAs upper reflector；
Step 10: epitaxial wafer being taken out from dilute hydrochloric acid and cleans drying, scribing sliver is then carried out, requirement can be obtained
Upside-down mounting red light chips, chip size are determined by the size of upside-down mounting blue chip.
It in the above-described embodiments, is first to prepare the red-light LED quantum well structure with resonant cavity, then prepare upside-down mounting blue-ray LED
Then red-light LED quantum well structure with resonant cavity is obtained light together with blue LED flip chip back bonding by chip
Pumping resonance enhances upside-down mounting red-light LED device.In practical applications, blue LED flip chip can also be first prepared, then is prepared with humorous
Shake the red-light LED quantum well structure of chamber, then falls blue LED flip chip and red-light LED quantum well structure with resonant cavity
Dress is bonded together, and obtains optical pumping resonance enhancing upside-down mounting red-light LED device.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (8)
1. a kind of optical pumping resonance enhances upside-down mounting red-light LED device characterized by comprising
Red-light LED quantum well structure (1) with resonant cavity；And
Exit facet is bonded to the blue LED flip chip (2) of red-light LED quantum well structure (1) plane of incidence；
Wherein, the blue photons which issues excite the red-light LED quantum well structure (1), keep this red
Light LED quantum well structure (1) issues red photons；
The red-light LED quantum well structure (1) includes:
Bottom Ta2O5/SiO2Bragg mirror (5)；
It is formed in bottom Ta2O5/SiO2AlGaInP multiple quantum wells (4) on Bragg mirror (5)；
The AlGaInP phase adjustment layer (6) being formed on the AlGaInP multiple quantum wells (4)；And
The top AlAs/AlGaAs Bragg mirror (3) being formed on the AlGaInP phase adjustment layer (6).
2. optical pumping resonance according to claim 1 enhances upside-down mounting red-light LED device, which is characterized in that the bottom Ta2O5/
SiO2Bragg mirror (5) includes:
Multipair period alternately arranged Ta2O5/SiO2Dielectric layer, wherein Ta2O5And SiO2Physical thickness be respectively λ0/ 4n, wherein
λ0It is quantum well radiation central wavelength, n is respectively Ta2O5And SiO2Refractive index.
3. optical pumping resonance according to claim 1 enhances upside-down mounting red-light LED device, which is characterized in that the AlGaInP is more
Quantum Well (4) includes:
Group is divided into the multipair Quantum Well periodic structure of AlGaInP/AlGaInP, what which was issued
Red photons system is obtained by adjusting the component of Al and Ga in the AlGaInP multiple quantum wells (4), central wavelength from 570nm to
650nm is continuously adjustable；The overall thickness of red-light LED active area is by AlGaInP to the absorption coefficient d of blue light 450-470nm wave band
≈104~105cm-1Estimation obtains, and the thickness of active area is in 400nm between 600nm.
4. optical pumping resonance according to claim 1 enhances upside-down mounting red-light LED device, which is characterized in that the AlGaInP phase
Position adjustment layer (6) is certain thickness AlGaInP epitaxial layer, and for adjusting Resonant Intake System, the feux rouges for issuing Quantum Well meets
Condition of resonance.
5. optical pumping resonance according to claim 1 enhances upside-down mounting red-light LED device, which is characterized in that the top AlAs/
A1GaAs Bragg mirror (3) includes:
The AlAs/AlGaAs dielectric layer of multipair periodic arrangement, wherein the physical thickness of AlAs and AlGaAs is respectively λ0/ 4n, wherein
λ0It is quantum well radiation central wavelength, n is respectively the refractive index of AlAs and AlGaAs.
6. enhancing upside-down mounting red-light LED device according to optical pumping resonance according to claim 1, which is characterized in that the upside-down mounting
Blue-light LED chip (2) includes:
Sapphire Substrate (7)；
N-GaN (8), GaN Quantum Well (9) and the p-GaN (10) successively grown in the Sapphire Substrate (7)；And
It is formed in the blue LED flip chip (2) ipsilateral p-electrode and n-electrode；
Wherein blue photons are emitted from the Sapphire Substrate (7) after thinned grinding and polishing.
7. a kind of preparation method of optical pumping resonance enhancing upside-down mounting red-light LED device described in any one of claims 1 to 6,
It is characterized in that, this method comprises:
Red-light LED quantum well structure (1) and blue LED flip chip (2) with resonant cavity are prepared respectively；And
Together by the red-light LED quantum well structure (1) with resonant cavity and blue LED flip chip (2) back bonding；
Wherein, the red-light LED quantum well structure (1) includes:
Bottom Ta2O5/SiO2Bragg mirror (5)；
It is formed in bottom Ta2O5/SiO2AlGaInP multiple quantum wells (4) on Bragg mirror (5)；
The AlGaInP phase adjustment layer (6) being formed on the AlGaInP multiple quantum wells (4)；And
The top AlAs/AlGaAs Bragg mirror (3) being formed on the AlGaInP phase adjustment layer (6).
8. the preparation method of optical pumping resonance enhancing upside-down mounting red-light LED device according to claim 7, which is characterized in that institute
Stating blue LED flip chip (2) includes:
Sapphire Substrate (7)；
N-GaN (8), GaN Quantum Well (9) and the p-GaN (10) successively grown in the Sapphire Substrate (7)；And
It is formed in the blue LED flip chip (2) ipsilateral p-electrode and n-electrode；
Wherein blue photons are emitted from the Sapphire Substrate (7) after thinned grinding and polishing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711402665.5A CN108133992B (en) | 2017-12-22 | 2017-12-22 | Optical pumping resonance enhances upside-down mounting red-light LED device and preparation method thereof |
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| CN201711402665.5A CN108133992B (en) | 2017-12-22 | 2017-12-22 | Optical pumping resonance enhances upside-down mounting red-light LED device and preparation method thereof |
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| CN108133992A CN108133992A (en) | 2018-06-08 |
| CN108133992B true CN108133992B (en) | 2019-11-29 |
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| CN109037406A (en) * | 2018-07-18 | 2018-12-18 | 南京阿吉必信息科技有限公司 | A kind of red-light LED flip chip structure and preparation method |
| CN111048496B (en) * | 2018-10-12 | 2021-08-31 | 中国科学院半导体研究所 | Flip LED red light device structure and preparation method thereof |
| CN112786747A (en) * | 2021-02-05 | 2021-05-11 | 东莞市中晶半导体科技有限公司 | InGaN-based red light LED chip structure |
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| CN1547297A (en) * | 2003-12-18 | 2004-11-17 | 北京工业大学 | Structure of intracavity contact type vertical cavity surface emitting laser and preparation method thereof |
| CN104393131A (en) * | 2014-11-07 | 2015-03-04 | 深圳市九洲光电科技有限公司 | Optical pumping white-light LED and preparation method thereof |
| CN105609602A (en) * | 2015-12-29 | 2016-05-25 | 中国科学院半导体研究所 | Inverted RCLED (resonant cavity light-emitting diode) for visible light communication and preparation method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1547297A (en) * | 2003-12-18 | 2004-11-17 | 北京工业大学 | Structure of intracavity contact type vertical cavity surface emitting laser and preparation method thereof |
| CN104393131A (en) * | 2014-11-07 | 2015-03-04 | 深圳市九洲光电科技有限公司 | Optical pumping white-light LED and preparation method thereof |
| CN105609602A (en) * | 2015-12-29 | 2016-05-25 | 中国科学院半导体研究所 | Inverted RCLED (resonant cavity light-emitting diode) for visible light communication and preparation method therefor |
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