CN109037406A - A kind of red-light LED flip chip structure and preparation method - Google Patents
A kind of red-light LED flip chip structure and preparation method Download PDFInfo
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- CN109037406A CN109037406A CN201810788562.5A CN201810788562A CN109037406A CN 109037406 A CN109037406 A CN 109037406A CN 201810788562 A CN201810788562 A CN 201810788562A CN 109037406 A CN109037406 A CN 109037406A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
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- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
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- 230000008569 process Effects 0.000 abstract description 3
- 101100117563 Arabidopsis thaliana DBR4 gene Proteins 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000011982 device technology Methods 0.000 description 1
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- 238000001657 homoepitaxy Methods 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The present invention provides a kind of red-light LED flip chip structure and preparation method, including blue-ray LED flip-chip and the second red quantum well structure being located on the blue-ray LED flip-chip, the second red quantum well structure is equipped with DBR, blue-ray LED flip-chip is shone using electrical pumping, the second red quantum well structure equipped with the DBR is pumped, the second red quantum well structure is by luminescence generated by light, the DBR to blue light carry out reflection and to feux rouges carry out it is anti-reflection, for realizing transmitting narrow bandwidth feux rouges.The present invention reduces red-light LED flip chip fabrication process difficulty, improves chip yield and reliability, save the cost.
Description
Technical field
The invention belongs to optoelectronic device technology fields, and in particular to a kind of red-light LED flip chip structure and preparation side
Method.
Background technique
With LED being constantly progressive in chip manufacturing, integration packaging, display control and technology, LED is not only gradually
Fluorescent lamp is replaced to become the civilian light source of the third generation, and LED full-color display screen also gradually develops to indoor application from outdoor application.
Away from being gradually reduced, the small spacing LED of high definition is shown with its self-luminous, energy-efficient, entirety without spelling the pixel of LED full-color display screen
The development trend that the advantages that seam, service life length, fast response time, high contrast will lead LED to show will welcome explosion type in future and increases
It is long.
Realize that the key technology that high definition is shown is to reduce the size of display screen light emitting pixel.The best way is to use at present
Red, green, blue LED flip chip flip chip bonding or reflux are soldered in PCB circuit board, and each pixel puts three upside-down mounting cores of red, green, blue
Piece, by pixel arrangement at array format, using turntable driving.Due to LED flip chip compared to positive cartridge chip or vertical chip without
Routing is needed, therefore saves elemental area, but LED red light chips are GaAs material systems, if production inverted structure, technique are multiple
It is miscellaneous, yield rate is very low.
Red-light LED is that the luminescent materials such as homoepitaxy AlGaAs are prepared in GaAs semiconductor substrate, if being prepared into same
The inverted structure chip of face electrode, needs to peel off this semiconductor substrate, then be bonded an insulating substrate just can be carried out it is subsequent
The chip preparing process as blue light and green light LED, such as: the techniques such as etching, photoetching, vapor deposition, corrosion.Therefore, feux rouges
LED is since step of preparation process is more, the period is long and technology difficulty is big, so that final finished rate is low, higher cost.
Summary of the invention
The object of the present invention is to provide a kind of red-light LED flip chip structure and preparation methods, reduce red-light LED upside-down mounting core
Piece preparation process difficulty improves chip yield and reliability, save the cost.
The present invention provides the following technical solutions:
A kind of red-light LED flip chip structure, including blue-ray LED flip-chip and it is located at the blue-ray LED flip-chip
On the second red quantum well structure, the second red quantum well structure be equipped with DBR, blue-ray LED flip-chip using electricity
Injection shines, and pumps to the second red quantum well structure equipped with the DBR, the second red quantum well structure
By luminescence generated by light, the DBR reflection is carried out to blue light and feux rouges is carried out it is anti-reflection, for realizing the feux rouges of transmitting narrow bandwidth.
Preferably, the blue-ray LED flip-chip includes Sapphire Substrate and is sequentially arranged in the Sapphire Substrate
GaN buffer layer, N-GaN, multiple quantum wells, P-GaN and PN electrode, the second red quantum trap is located at the Sapphire Substrate
On.
Preferably, the second red quantum trap includes AlGaInP/GaInP multiple quantum wells and the DBR, the DBR with
Silica gel is equipped between the AlGaInP/GaInP multiple quantum wells, the AlGaInP/GaInP multiple quantum wells and the sapphire serve as a contrast
SiO is equipped between bottom2, the AlGaInP/GaInP multiple quantum wells pass through the SiO2It is bonded with the Sapphire Substrate.
A kind of preparation method of red-light LED flip chip structure, comprising the following steps:
S1: preparing blue-ray LED flip-chip, grows LED epitaxial structure using MOCVD on a sapphire substrate, successively gives birth to
Then long GaN buffer layer, N-GaN, multiple quantum wells and P-GaN are prepared, are thinned, are cut into core by ICP etching, PN electrode
Piece；
S2: preparation the first red quantum well structure, on gaas substrates using MOCVD growth GaInP etch stop layer,
AlAs sacrificial layer and AlGaInP/GaInP Quantum Well；
S3: growing optics film reflecting mirror DBR on a transparent substrate, reflect the anti-reflection feux rouges of blue light；
S4: DBR is adhered in the AlGaInP/GaInP Quantum Well of the first red quantum well structure, erodes the first feux rouges
The GaAs substrate of quantum well structure forms the second red quantum well structure；
S5: the AlGaInP/GaInP Quantum Well of the substrate surface of blue light flip-chip and step S4 is bonded to together, is formed
Novel feux rouges LED flip chip structure.
Preferably, novel feux rouges LED flip chip structure is cut into and blue-ray LED flip-chip same size, electric current
Blue-ray LED flip-chip is driven, realizes that blue light pumps red quantum well structure, emits the purpose of feux rouges.
Preferably, the Sapphire Substrate is bonded by SiO2 with the AlGaInP/GaInP Quantum Well.
The beneficial effects of the present invention are: a kind of novel feux rouges LED flip chip structure provided by the invention and preparation method,
The preparation cost for enormously simplifying technique, having saved flip LED red light chips；The present invention is using mature flip LED blue light core
Piece pumps red quantum well structure luminescence generated by light as pumping source, then selects feux rouges outgoing by DBR, so that feux rouges bandwidth is more
It is narrow, it is photochromic purer, and wavelength is smaller with electric current and temperature drift.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.In the accompanying drawings:
Fig. 1 is blue-ray LED flip chip structure schematic diagram of the present invention；
Fig. 2 is red-light LED quantum well structure schematic diagram of the present invention；
Fig. 3 is red-light LED inverted structure schematic diagram of the present invention；
In the figure, it is marked as 1. blue-ray LED flip-chips；1-1. Sapphire Substrate；1-2.GaN buffer layer；1-3.N-GaN；
1-4. multiple quantum wells；1-5.P-GaN；1-6.PN electrode；2. the first red quantum well structure；2-1.GaAs substrate；2-2.GaInP
Etch stop layer；2-3.AlAs sacrificial layer；2-4.AlGaInP/GaInP multiple quantum wells；3. silica gel；4.DBR；5. the second feux rouges amount
Sub- well structure；6.SiO2；7. novel red-light LED inverted structure.
Specific embodiment
As shown in Figure 1-Figure 3, a kind of red-light LED flip chip structure, including blue-ray LED flip-chip 1 and be located at indigo plant
The second red quantum well structure 5 with DBR4 in light LED flip chip 1.Blue-ray LED flip-chip 1 is sent out using electrical pumping
Light pumps the second red quantum well structure 5 for having DBR4 thereon, red quantum well structure 5 therefore by luminescence generated by light,
DBR4 on red quantum trap cavity resonator structure reflects blue light, anti-reflection to feux rouges progress, therefore it is narrow to reach transmitting
The purpose of the feux rouges of bandwidth.
As shown in Figure 1-Figure 3, a kind of preparation method of red-light LED flip chip structure, specific:
A, blue-ray LED flip-chip 1 is prepared:
1) LED epitaxial structure is grown using MOCVD on Sapphire Substrate 1-1, successively grows GaN buffer layer 1-2, N-
GaN 1-3, multiple quantum wells 1-4 and P-GaN 1-5, epitaxial structure overall thickness 7um；
2) side P-GaN 1-5, multiple quantum wells 1-4 and part N-GaN 1-3, depth are etched away using ICP etching technics
1um；
3) PN electrode 1-6 is made, on the table top not etched, the face P mirror electrodes are deposited using electron beam evaporation
NiAgPtAu 1.5um simultaneously prepares figure, and on table top after etching, the face N electrode is deposited using electron beam evaporation
CrPtAu2.5um simultaneously prepares figure；
4) piece is thinned to 80um, then after laser scribing and sliver, becomes blue-ray LED flip-chip one by one.
B, the first red quantum well structure 2 is prepared:
On GaAs substrate 2-1 using MOCVD growth GaInP etch stop layer 2-2, AlAs sacrificial layer 2-3 and
AlGaInP/GaInP Quantum Well 2-4, epitaxial structure overall thickness 2um.
C, reflecting mirror DBR4 is grown on a transparent substrate:
Light is prepared using electron beam evaporation or ion beam sputtering process on glass or sapphire (thickness 50-80um) substrate
Film DBR4 is learned, TiO2/SiO2 or Ta2O5/SiO2 are made of 10-50, which has reflection blue light, the function of anti-reflection feux rouges
Energy.
D, DBR4 is mutually Nian Jie with the first red quantum well structure 2:
DBR4 silica gel 3 is adhered on the multiple quantum wells 2-4 of the first red quantum well structure 2, using acetic acid: phosphoric acid: double
Oxygen water (3:1:1), erodes the GaAs substrate 2-1 of the first red quantum well structure 2, formed with DBR without GaAs substrate
Second red quantum well structure 5；
E, blue-ray LED flip-chip 1 is bonded with the second red quantum well structure 5:
By the Sapphire Substrate face 1-1 of blue-ray LED flip-chip 1, with the second red quantum well structure 5 in above-mentioned steps D
Multiple quantum wells 2-4, pass through SiO26 are bonded to together, form novel feux rouges LED flip chip structure 7.
F, novel feux rouges LED flip chip:
Novel feux rouges LED flip chip structure 7 is split and cut using laser scribing, is formed and 1 phase of blue-ray LED flip-chip
Same size adds driving current to electrode 1-6, reaches optical pumping red quantum well structure, emits the purpose of feux rouges.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, although referring to aforementioned reality
Applying example, invention is explained in detail, for those skilled in the art, still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features.It is all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of red-light LED flip chip structure, which is characterized in that including blue-ray LED flip-chip and be located at the blue-ray LED
The second red quantum well structure on flip-chip, the second red quantum well structure are equipped with DBR, blue-ray LED upside-down mounting core
Piece is shone using electrical pumping, is pumped to the second red quantum well structure equipped with the DBR, the second feux rouges amount
Sub- well structure by luminescence generated by light, the DBR reflection is carried out to blue light and feux rouges is carried out it is anti-reflection, for realizing transmitting narrow bandwidth
Feux rouges.
2. a kind of red-light LED flip chip structure according to claim 1, which is characterized in that the blue-ray LED upside-down mounting core
Piece includes Sapphire Substrate and the GaN buffer layer, N-GaN, multiple quantum wells, the P-GaN that are sequentially arranged in the Sapphire Substrate
With PN electrode, the second red quantum trap is located in the Sapphire Substrate.
3. a kind of red-light LED flip chip structure according to claim 2, which is characterized in that second red quantum
Trap includes AlGaInP/GaInP multiple quantum wells and the DBR, is set between the DBR and the AlGaInP/GaInP multiple quantum wells
There is silica gel, SiO2, the AlGaInP/ are equipped between the AlGaInP/GaInP multiple quantum wells and the Sapphire Substrate
GaInP multiple quantum wells is bonded by the SiO2 with the Sapphire Substrate.
4. a kind of preparation method of red-light LED flip chip structure, which comprises the following steps:
S1: preparing blue-ray LED flip-chip, grows LED epitaxial structure using MOCVD on a sapphire substrate, successively grows GaN
Then buffer layer, N-GaN, multiple quantum wells and P-GaN are prepared, are thinned, are cut into chip by ICP etching, PN electrode；
S2: the first red quantum well structure of preparation, it is sacrificial using MOCVD growth GaInP etch stop layer, AlAs on gaas substrates
Domestic animal layer and AlGaInP/GaInP Quantum Well；
S3: growing optics film reflecting mirror DBR on a transparent substrate, reflect the anti-reflection feux rouges of blue light；
S4: DBR is adhered in the AlGaInP/GaInP Quantum Well of the first red quantum well structure, erodes the first red quantum
The GaAs substrate of well structure forms the second red quantum well structure；
S5: the AlGaInP/GaInP Quantum Well of the substrate surface of blue light flip-chip and step S4 is bonded to together, is formed novel
Red-light LED flip chip structure.
5. a kind of preparation method of red-light LED flip chip structure according to claim 4, which is characterized in that will be novel
Red-light LED flip chip structure, which is cut into, drives blue-ray LED flip-chip with blue-ray LED flip-chip same size, electric current, in fact
Existing blue light pumps red quantum well structure, emits the purpose of feux rouges.
6. a kind of preparation method of red-light LED flip chip structure according to claim 4, which is characterized in that the indigo plant
Jewel substrate is bonded by SiO2 with the AlGaInP/GaInP Quantum Well.
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| WO2023221161A1 (en) * | 2022-05-18 | 2023-11-23 | Tcl华星光电技术有限公司 | Light-emitting device and manufacturing method therefor |
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|---|---|---|---|---|
| CN108133992A (en) * | 2017-12-22 | 2018-06-08 | 中国科学院半导体研究所 | Optical pumping resonance enhancing upside-down mounting red-light LED device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108133992A (en) * | 2017-12-22 | 2018-06-08 | 中国科学院半导体研究所 | Optical pumping resonance enhancing upside-down mounting red-light LED device and preparation method thereof |
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| WO2023221161A1 (en) * | 2022-05-18 | 2023-11-23 | Tcl华星光电技术有限公司 | Light-emitting device and manufacturing method therefor |
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Application publication date: 20181218 |