TWI583025B - Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same - Google Patents

Description

Film type flip chip light-emitting diode with double base and manufacturing method thereof

The invention relates to a film-type flip-chip light-emitting diode with double pedestals and a manufacturing method thereof, in particular to a film-type flip-chip light-emitting diode with an additional transparent sub-base and a manufacturing method thereof. By plating an optical film on the transparent sub-base, the luminous efficiency of the film-type flip-chip light-emitting diode is effectively improved and the light-emitting angle is controlled.

According to the light emitting diode (LED), compared with the traditional incandescent light source, it has the advantages of power saving, small volume, low voltage driving, no mercury, no heat radiation, fast operation response, and long life. The light-emitting diode is the best light source for the next generation of energy-saving lighting. It has been widely used in lighting of household goods, backlights of liquid crystal displays, graphic display screens or third-hand lights of automobiles, including resonant cavity illumination. A semiconductor-emitting device of a resonant-cavity light emitting diode (RCLED), a vertical-cavity surface-emitting diode (VCSEL), and an edge-emitting laser (edge emitting laser) It is currently available effective light-emitting element; however, the luminous efficiency of the light-emitting diode is still one of the important problems that need to be solved urgently. Therefore, many methods for improving the luminous efficiency of the light-emitting diode have been proposed one by one in the past. In the patent, such as the Republic of China Patent Publication No. I371120, "the flip-chip light-emitting diode with epitaxial enhancement layer and its manufacturing method", wherein The steps of the manufacturing method are first to form an epitaxial structure on a substrate; further, a p-type electrode and an n-type electrode are respectively formed on the epitaxial structure; further, an epitaxial enhancement layer is formed on the epitaxial structure, Forming a metal bump receiving area above the p-type electrode and the n-type electrode; connecting, forming a metal bump in the metal bump receiving area on the p-type electrode and the n-type electrode, and forming a metal bump The block portion protrudes from the epitaxial enhancement layer to form an LED structure having an epitaxial enhancement layer; thereafter, the LED structure with the epitaxial enhancement layer is flip-chip bonded to a pedestal; finally, the removal a substrate, forming a flip-chip light-emitting diode with an epitaxial enhancement layer; although the invention adopts an epitaxial structure method for strengthening the flip-chip light-emitting diode, avoiding the use of laser-assisted lift-off technology or other techniques to remove the substrate The rupture of the epitaxial structure is mainly used to improve the yield of the flip-chip light-emitting diode; however, the light-emitting diode manufactured by such a process has a light-emitting structure whose light-emitting efficiency is limited by the stacked structure. Not significant, causing two The efficiency of the polar body is not good; therefore, how to effectively optimize the thin film stacking method to achieve the high light-emitting efficiency of the flip-chip light-emitting diode is still a continuous effort of the technology developers or researchers of today's light-emitting diodes. Overcome and solve important issues.

Nowadays, the inventor is in view of the above-mentioned conventional thin film type flip-chip light-emitting diodes, which have many defects such as poor light-emitting efficiency due to the stacking limitation of the structure, and thus is a tireless spirit and with its rich professional knowledge. With the help of years of practical experience, and improved, and based on this, the present invention was developed.

The main purpose of the present invention is to provide a film-type flip-chip light-emitting diode with a double pedestal and a manufacturing method thereof, in particular to a film-type flip-chip light-emitting diode additionally provided with a transparent sub-base, and a manufacturing method thereof. By plating an optical film on the transparent sub-base, the luminous efficiency of the thin film flip-chip diode is effectively improved and the light-emitting angle is controlled.

In order to achieve the above-mentioned implementation, the present inventors have proposed a method for fabricating a thin film type flip-chip light-emitting diode having a dual pedestal, comprising at least the following steps: first, depositing a first semiconductor layer on a substrate; Forming a light emitting structure layer on the first semiconductor layer; further, forming a second semiconductor layer on the light emitting structure layer, and electrically connecting the second semiconductor layer to the first semiconductor layer; subsequently forming a first contact electrode and a second contact electrode on the first semiconductor layer and the second semiconductor layer; then, forming a first sub-mount on the first contact electrode and the second contact electrode, and The substrate is removed; finally, a transparent second sub-mount is adhered to the first semiconductor layer by an adhesive layer, and a first optical film is formed between the second sub-base and the first semiconductor layer, thereby preparing A double-substrate film-type flip-chip light-emitting diode.

The method for manufacturing a film-type flip chip light-emitting diode having a double pedestal as described above, wherein the adhesive layer is selected from the group consisting of epoxy, silicone or benzocyclobutene (BCB). And one of them is such that the second sub-substrate is adhered to the first semiconductor layer.

The method for manufacturing a film-type flip chip light-emitting diode having a double pedestal as described above, wherein the adhesive layer is further provided with a phosphor.

The method for manufacturing a thin film type flip-chip LED having a dual pedestal as described above, wherein the second sub-substrate is further disposed with a second optical film away from the surface of the first semiconductor layer.

The method for manufacturing a film-type flip chip LED with a double pedestal as described above, wherein the second optical film is an AR coating, a Distributed Bragg Reflector (DBR) or One of the Omni-Directional Reflectors (ODRs).

The method for manufacturing a thin film type flip chip LED having a dual pedestal as described above, wherein the first optical film is an AR coating, a distributed Bragg mirror (DBR) or an omnidirectional mirror ( ODR) and so on.

The method for manufacturing a thin film type flip chip LED having a dual pedestal as described above, wherein the substrate is selected from the group consisting of sapphire (Al ₂ O ₃ ), tantalum carbide (SiC), bismuth (Si), and gallium arsenide ( GaAs), zinc oxide (ZnO), and a group of crystalline materials having a Hexagonal system.

The method for manufacturing a thin film type flip-chip light-emitting diode with a double pedestal as described above, wherein the light-emitting structural layer has a multi-quantum well (MWQ) structure, and the multiple quantum well structure comprises a plurality of mutual The well layers and the barrier layers are alternately stacked, and each well layer has a well layer.

In addition, the present invention further provides a film-type flip-chip light-emitting diode with a double pedestal, which is prepared by the method of the above embodiment, and the film-type flip-chip light-emitting diode system with double pedestal includes at least one first a sub-base, a first contact electrode, a second contact electrode, a first semiconductor layer, a second semiconductor layer, a light-emitting structure layer, and a second sub-base; the first contact electrode system is disposed at the first a second contact electrode is disposed on the first sub-base; the first semiconductor layer is disposed on the first contact electrode; and the second semiconductor layer is disposed on the second contact electrode The light emitting structure layer is disposed between the first semiconductor layer and the second semiconductor layer; the second sub-base is adhered to the first semiconductor layer by an adhesive layer, and the second sub-base and the first semiconductor layer There is a first optical film.

The double-substrate film-type flip-chip light-emitting diode as described above, wherein the second sub-base is further disposed with a second optical film away from the surface of the first semiconductor layer.

Therefore, the dual-substrate film-type flip-chip light-emitting diode of the present invention and the manufacturing method thereof use an adhesive layer to additionally adhere a transparent second sub-base to the first semiconductor layer, and further to the first semiconductor A first optical film of an anti-reflective anti-reflective layer (AR coating) is disposed between the layer and the second sub-base, so that the light emitted by the light-emitting structure layer is easily emitted from the double-substrate film-type flip chip illumination of the present invention. The diode can effectively improve the light extraction efficiency of the double-substrate film-type flip-chip light-emitting diode; in addition, the double-substrate film-type flip-chip light-emitting diode of the present invention and the manufacturing method thereof are A light reflection is adhered between the additional transparent sub-substrate and the first semiconductor layer by an adhesive layer of epoxy, silicone or benzophenone (BCB) a first optical film of one of a functional decentralized Bragg reflector (DBR) or an omnidirectional mirror (ODR), which effectively reflects the light emitted by the light-emitting structure layer into the phosphor colloid formed by the adhesive layer in a total reflection manner. On the light, by the fluorescent colloid The wavelength conversion effectively increases the utilization rate of the phosphor powder, and the light extraction efficiency of the film-type flip chip light-emitting diode with double pedestal is improved.

Furthermore, the double-substrate film-type flip-chip light-emitting diode of the present invention and the manufacturing method thereof are provided by applying an anti-reflection anti-reflection layer (AR) on the additionally disposed transparent second sub-base. The second optical film of the coating, in combination with the function of the first optical film, effectively makes the light emitted by the light-emitting structure layer more easily emitted from the double-base film-type flip-chip light-emitting diode of the present invention to achieve the reinforcement The light extraction efficiency of the double-substrate film-type flip-chip light-emitting diode can also effectively control the light angle; finally, the double-substrate film-type flip-chip light-emitting diode of the present invention and the manufacturing method thereof are A first optical film of a diffused Bragg reflector (DBR) or an omnidirectional mirror (ODR) with a light reflecting function is disposed above the additionally disposed transparent second sub-base to effectively emit the light emitted by the light emitting structure layer The reflective colloid is reflected back to the phosphor colloid formed by the adhesive layer, and the wavelength of the light is converted by the fluorescent colloid, thereby effectively increasing the utilization of the phosphor powder, and combining the function of the first optical film to achieve the reinforcement double Pedestal The light extraction efficiency and the light exit angle of the film-type flip chip light-emitting diode are controlled.

The object of the present invention and its structural design and advantages will be explained in the light of the preferred embodiments shown in the following drawings, so that the reviewing committee can have a more in-depth and specific understanding of the present invention.

First, in the following description of the embodiments, it should be understood that when a layer (or film) or a structure is disposed on another substrate, another layer (or film), or another structure "on" or "down", "Directly" is located in another substrate, layer (or film), or another structure, or has more than one intermediate layer disposed therebetween in an "indirect" manner. The review panel may describe the location of each layer with reference to the drawings.

First, please refer to the first and second figures, which are flowcharts of steps of a preferred embodiment of a method for fabricating a film-type flip-chip diode having a dual pedestal, and a schematic cross-sectional view of a film stack, wherein the present invention The steps of the method for manufacturing the film-type flip chip LED of the double pedestal include:

Step 1 (S1): depositing a first semiconductor layer (2) on a substrate (1), wherein the substrate (1) is selected from the group consisting of sapphire (Al ₂ O ₃ ), tantalum carbide (SiC), germanium (Si), Formed by gallium arsenide (GaAs), zinc oxide (ZnO), and a material having a hexagonal system of crystalline materials; in a preferred embodiment of the invention, the substrate (1) is made of sapphire material Constructed, and the first semiconductor layer (2) is an n-type semiconductor layer;

Step 2 (S2): forming a light-emitting structure layer (3) on the first semiconductor layer (2); in a preferred embodiment of the invention, the light-emitting structure layer (3) is a state having multiple quantum well structures The multi-quantum well structure comprises a plurality of well layers (31) and a barrier layer (32) stacked alternately with each other, and each well layer (32) has a well layer (31);

Step 3 (S3): forming a second semiconductor layer (4) on the light emitting structure layer (3), and the electrical properties of the second semiconductor layer (4) are opposite to those of the first semiconductor layer (2); In a preferred embodiment of the present invention, the electrical property of the second semiconductor layer (4) is a p-type semiconductor layer electrically opposite to the n-type semiconductor layer of the first semiconductor layer (2);

Step 4 (S4): forming a first contact electrode (5) and a second contact electrode (6) on the first semiconductor layer (2) and the second semiconductor layer (4); please refer to the third figure The present invention is a schematic view of electrode formation according to a preferred embodiment of the method for fabricating a thin film type light-emitting diode of the present invention, wherein before the first contact electrode (5) and the second contact electrode (6) are formed, First removing a portion of the second semiconductor layer (4) and the light emitting structure layer (3) by a lithography process and an etching process to expose the first semiconductor layer (2) and then to the first semiconductor layer (2) and Forming a first contact electrode (5) and a second contact electrode (6) on the second semiconductor layer (4) in an ohmic contact; in a preferred embodiment of the invention, contacting the first semiconductor layer (2) The first contact electrode (5) of the semiconductor layer is an n-type electrode, and the second contact electrode (6) contacting the p-type semiconductor layer of the second semiconductor layer (4) is a p-type electrode;

Step 5 (S5): forming a first sub-base (7) on the first contact electrode (5) and the second contact electrode (6), and removing the substrate (1); please refer to the fourth figure together The first sub-substrate forming diagram of a preferred embodiment of the method for fabricating a thin film flip-chip diode having a dual pedestal according to the present invention, wherein a laser lift-off (LLO) can be used. The technique removes the substrate (1) composed of sapphire material, and the laser stripping (LLO) process method is well known in the art and is not the focus of the present invention. Therefore, it is not in the present invention. In addition, a transparent sub-base (7) is formed on the first contact electrode (5) and the second contact electrode (6) having the same height plane, which is the main technical feature of the flip-chip light-emitting diode;

Step 6 (S6): bonding a transparent second sub-mount (8) to the first semiconductor layer (2) by an adhesive layer (81), and the second sub-mount (8) and the first semiconductor The layer (2) has a first optical film (82) for preparing a double-substrate film-type flip-chip light-emitting diode; as shown in the fifth figure, the present invention has a dual base. A method for fabricating a thin film flip-chip diode according to a preferred embodiment of the second sub-substrate, wherein the adhesive layer (81) is selected from the group consisting of epoxy, polysilicon or One of benzocyclobutene (BCB) or the like to adhere the second submount (8) to the first semiconductor layer (2), and in the second preferred embodiment of the present invention, the adhesive layer (81) Further, a phosphor powder may be further added to form a phosphor colloid, and the phosphor colloid can convert the wavelength of light emitted by the light emitting structure layer (3), for example, using a fluorescent powder to convert the blue LED or the ultraviolet UV-LED. The generated blue or ultraviolet light is converted into dichromatic or trichromatic white light respectively; in addition, the first optical film (82) is an anti-reflection layer and dispersed One of a Bragg mirror (DBR) or an omnidirectional mirror (ODR), etc., when the first optical film (82) is an anti-reflection layer, the film-type light-emitting diode of the present invention having a double pedestal can be improved. Light extraction efficiency; when the first optical film (82) is a reflective layer such as a decentralized Bragg mirror (DBR) or an omnidirectional mirror (ODR), the film-type light-emitting diode having a double pedestal can be emitted. The light is totally reflected back to the phosphor colloid formed by the adhesive layer (81), and the phosphor colloid can convert the wavelength of the light emitted by the light emitting structure layer (3) to increase the utilization rate of the phosphor powder.

In addition, referring to FIG. 6 , a second optical film forming diagram of a preferred embodiment of the method for fabricating a thin film flip chip LED of the present invention, wherein the second submount (8) a second optical film (83) may be further disposed away from the surface of the first semiconductor layer (2); in a preferred embodiment of the invention, the second optical film (83) is an anti-reflective layer, dispersed One of a Bragg mirror (DBR) or an omnidirectional mirror (ODR), the function of which is the same as that of the first optical film (82), when the second optical film (83) is an anti-reflection layer, combined with the first The function of the optical film (82) can improve the light extraction efficiency of the double-substrate film-type flip-chip light-emitting diode of the present invention, and can also effectively control the light angle; when the second optical film (83) is a distributed Bragg reflection When a reflective layer such as a mirror (DBR) or an omnidirectional mirror (ODR) is combined with the function of the first optical film (82), the light emitted by the double-base film-type flip-chip light-emitting diode is reflected by total reflection. a phosphor colloid formed by the adhesive layer (81), by which the light-emitting structure layer (3) can be emitted Light wavelength conversion to increase the utilization of the phosphor powder, combined with the function of the first optical film (82), to achieve the control of light extraction efficiency and light exit angle of the film-type flip chip light-emitting diode with double base .

Furthermore, the present invention further provides a film-type flip-chip light-emitting diode having a double pedestal, which is prepared by the method of the above embodiment, and please refer to the fifth embodiment, which has a double-substrate film coating. The crystal light emitting diode system includes at least:

a first sub-base (7);

a first contact electrode (5) is disposed on the first sub-base (7);

a second contact electrode (6) is disposed on the first sub-base (7) corresponding to the first contact electrode (5);

A first semiconductor layer (2) is disposed on the first contact electrode (5); further, in a preferred embodiment of the invention, the electrical property of the first semiconductor layer (2) is an n-type semiconductor layer The first contact electrode (5) electrically connected to the first semiconductor layer (2) in an ohmic contact manner is an n-type electrode;

a second semiconductor layer (4) is disposed on the second contact electrode (6); further, in a preferred embodiment of the invention, the second semiconductor layer (4) and the second contact electrode (6) are Electrically connected in an ohmic contact manner; further, in a preferred embodiment of the invention, the second semiconductor layer (4) is electrically opposite to the n-type semiconductor layer of the first semiconductor layer (2) a p-type semiconductor layer, the second contact electrode (6) is a p-type electrode;

A light-emitting structure layer (3) is disposed between the first semiconductor layer (2) and the second semiconductor layer (4), wherein the light-emitting structure layer (3) is a state having multiple quantum well structures, and multiple quantum The well structure comprises a plurality of well layers (31) and barrier layers (32) stacked alternately with each other, and a well layer (31) between each two barrier layers (32);

a second sub-mount (8) is adhered to the first semiconductor layer (2) by an adhesive layer (81), and the second sub-base (8) and the first semiconductor layer (2) are a first optical film (82), wherein the adhesive layer (81) is selected from the group consisting of epoxy, silicone or benzocyclobutene (BCB) to make the second sub The pedestal (8) is adhered to the first semiconductor layer (2). In the second preferred embodiment of the present invention, the adhesive layer (81) may further be provided with a phosphor powder to form a phosphor colloid. The phosphor colloid can convert the wavelength of the light emitted by the light-emitting structure layer (3), for example, using the phosphor powder to convert the blue light or ultraviolet light generated by the blue LED or the ultraviolet UV-LED into white light of two wavelengths or three wavelengths, respectively. In addition, the first optical film (82) is one of an anti-reflection layer, a distributed Bragg mirror (DBR) or an omnidirectional mirror (ODR), and the first optical film (82) is an anti-reflection. The layer can improve the light extraction efficiency of the dual-substrate thin film type light emitting diode of the present invention, and when the first optical film (82) is a decentralized Bragg reflector (DBR) or an omnidirectional inverse When a reflective layer such as an image-emitting mirror (ODR) is used, the light emitted by the thin-film light-emitting diode having the double pedestal can be totally reflected back to the fluorescent colloid formed by the adhesive layer (81), and the fluorescent light is formed by the fluorescent layer. The colloid can convert the wavelength of light emitted by the light-emitting structure layer (3) to increase the utilization of the phosphor powder.

In addition, a second optical film (83) may be further disposed on the surface of the second sub-base (8) away from the first semiconductor layer (2). Please refer to the second optical film (83) shown in FIG. It is one of an anti-reflection layer, a decentralized Bragg mirror (DBR) or an omnidirectional mirror (ODR), and its function is the same as that of the first optical film (82), and when the second optical film (83) is one The anti-reflection layer combined with the function of the first optical film (82) can improve the light extraction efficiency of the dual-substrate film-type flip-chip light-emitting diode of the present invention, and can also effectively control the light angle; when the second optical film ( 83) When a reflective layer such as a decentralized Bragg reflector (DBR) or an omnidirectional mirror (ODR) is combined, the function of the first optical film (82) can be combined to enable a film-type flip chip diode having a double pedestal to be emitted. The light is totally reflected back to the phosphor colloid formed by the adhesive layer (81), and the phosphor colloid can convert the wavelength of the light emitted by the light emitting structure layer (3) to increase the utilization rate of the phosphor powder. And combining the function of the first optical film (82) to achieve light extraction of the film-type flip chip light-emitting diode with double base Efficiency and control of the angle of light.

It can be seen from the above description that the present invention has the following advantages in comparison with the prior art in the present invention.

1. The double-substrate film-type flip-chip light-emitting diode of the present invention and the method of manufacturing the same, wherein an adhesive layer is additionally adhered to the first semiconductor layer to further adhere a transparent second sub-base, and further to the first semiconductor layer Providing a first optical film with an anti-reflection anti-reflection layer between the second sub-base, so that the light emitted by the light-emitting structure layer can easily emit the double-substrate film-type flip-chip light-emitting diode of the present invention. The light extraction efficiency of the film-type flip chip light-emitting diode with double pedestal is effectively improved.

2. The double-substrate film-type flip-chip light-emitting diode of the present invention and the manufacturing method thereof are provided by using an epoxy resin and an epoxide between the transparent second sub-substrate and the first semiconductor layer. The adhesive layer of one of silicone or benzocyclobutene (BCB) adheres to the first of one of a diffused Bragg reflector (DBR) or an omnidirectional mirror (ODR) with a light reflecting function. The optical film effectively reflects the light emitted by the light-emitting structure layer to the fluorescent colloid formed by the adhesive layer in a total reflection manner, and converts the wavelength of the light by the fluorescent colloid, thereby effectively increasing the utilization rate of the phosphor powder. Improvement in light extraction efficiency of a film-type flip chip light-emitting diode with a double pedestal.

3. The dual-substrate film-type flip-chip light-emitting diode of the present invention and the manufacturing method thereof are provided by coating an anti-reflection layer of an anti-reflection layer on the additionally disposed transparent second sub-base The optical film, in combination with the function of the first optical film, effectively makes the light emitted by the light-emitting structure layer more easily emitted from the double-base film-type flip-chip light-emitting diode of the present invention, so as to enhance the film with the double base The light extraction efficiency of the flip chip light-emitting diode can also effectively control the light angle.

4. The dual-substrate film-type flip-chip light-emitting diode of the present invention and the manufacturing method thereof are provided by dispersing a Bragg mirror or a full light reflecting function over an additionally disposed transparent second sub-base The first optical film of the azimuth mirror effectively reflects the light emitted by the light-emitting structure layer to the fluorescent colloid formed by the adhesive layer in a total reflection manner, and converts the wavelength of the light by the fluorescent colloid, thereby effectively increasing the utilization of the fluorescent powder. Rate, combined with the function of the first optical film, to achieve the control of the light extraction efficiency and the light exit angle of the film-type flip chip light-emitting diode with double base.

In summary, the dual-substrate film-type flip-chip light-emitting diode of the present invention and the method of manufacturing the same can achieve the intended use efficiency by the above-disclosed embodiments, and the present invention has not been disclosed in Before applying, Cheng has fully complied with the requirements and requirements of the Patent Law.爰Issuing an application for a patent for invention in accordance with the law, and asking for a review, and granting a patent, is truly sensible.

The illustrations and descriptions of the present invention are merely preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; those skilled in the art, which are characterized by the scope of the present invention, Equivalent variations or modifications are considered to be within the scope of the design of the invention.

(1) ‧‧‧Substrate

(2) ‧‧‧First semiconductor layer

(3) ‧‧‧Lighted structural layers

(31)‧‧‧ Wells

(32) ‧ ‧ barrier layer

(4) ‧‧‧Second semiconductor layer

(5) ‧‧‧First contact electrode

(6) ‧‧‧second contact electrode

(7) ‧‧‧First sub-base

(8) ‧‧‧Second sub-base

(81) ‧‧‧Adhesive layer

(82) ‧‧‧First optical film

(83)‧‧‧Second optical film

(S1)‧‧‧Step one

(S2)‧‧‧Step 2

(S3) ‧ ‧ Step 3

(S4)‧‧‧Step four

(S5) ‧ ‧ step five

(S6) ‧‧‧Step six

The first figure: a flow chart of the steps of a preferred embodiment of the method for fabricating a thin film type flip-chip LED of the present invention

FIG. 2 is a cross-sectional view showing a thin film stacking method of a preferred embodiment of the present invention

FIG. 3 is a schematic view showing the electrode formation of a preferred embodiment of the method for fabricating a film-type flip-chip diode having a dual pedestal according to the present invention;

FIG. 4 is a schematic view showing the first sub-substrate forming method of a preferred embodiment of the present invention

FIG. 5 is a schematic view showing the second sub-substrate forming method of a preferred embodiment of the present invention

Figure 6 is a schematic view showing the second optical film forming method of a preferred embodiment of the present invention

(S1)‧‧‧Step one

(S2)‧‧‧Step 2

(S3) ‧ ‧ Step 3

(S4)‧‧‧Step four

(S5) ‧ ‧ step five

(S6) ‧‧‧Step six

Claims (8)

A method for manufacturing a thin film type flip chip LED having a double pedestal, comprising the steps of: depositing a first semiconductor layer on a substrate; forming a light emitting structure layer on the first semiconductor layer; forming a second The semiconductor layer is on the light emitting structure layer, and the electrical properties of the second semiconductor layer are opposite to the electrical properties of the first semiconductor layer; forming a first contact electrode and a second contact electrode on the first semiconductor layer and the Forming a first sub-base on the first contact electrode and the second contact electrode, and removing the substrate; and bonding a transparent second sub-base by an adhesive layer A first optical film is disposed on the first semiconductor layer, and the second submount and the first semiconductor layer are formed to form a dual-substrate thin film light emitting diode. The method for manufacturing a thin film type flip chip LED according to claim 1, wherein the adhesive layer is selected from the group consisting of an epoxy, a silicone or a benzene ring. One of the butenes is such that the second submount is adhered to the first semiconductor layer. The method for manufacturing a film-type flip chip LED having a double pedestal according to claim 1 or 2, wherein the adhesive layer is further provided with a phosphor powder. The method for manufacturing a film-type flip chip LED with a double pedestal according to claim 1, wherein the second submount is further provided with a second optical film away from the surface of the first semiconductor layer. The method for manufacturing a thin film type flip chip LED according to claim 4, wherein the second optical film is an anti-reflection layer, a distributed Bragg mirror or an omnidirectional mirror. one. The method for manufacturing a thin film type flip chip LED according to claim 1 or 5, wherein the first optical film is an anti-reflection layer, a distributed Bragg mirror or an omnidirectional reflection. One of the mirrors. The method for manufacturing a thin film type flip chip LED according to claim 1, wherein the substrate is selected from the group consisting of sapphire, tantalum carbide, niobium, gallium arsenide, zinc oxide, and a hexagonal system. A group of crystalline materials. The method for fabricating a thin film-type flip chip light-emitting diode according to claim 1, wherein the light-emitting structure layer has a multiple quantum well structure, and the multiple quantum well structure comprises a plurality of mutual The well layers and the barrier layers are alternately stacked, and each of the barrier layers has one such well layer.