CN103117349A - High-light AlGaInP light emitting diode (LED) and manufacturing method thereof - Google Patents
High-light AlGaInP light emitting diode (LED) and manufacturing method thereof Download PDFInfo
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- CN103117349A CN103117349A CN2011103637910A CN201110363791A CN103117349A CN 103117349 A CN103117349 A CN 103117349A CN 2011103637910 A CN2011103637910 A CN 2011103637910A CN 201110363791 A CN201110363791 A CN 201110363791A CN 103117349 A CN103117349 A CN 103117349A
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Abstract
The invention provides a high-light AlGaInP light emitting diode (LED) and manufacturing method of the LED. According to the high-light AlGaInP LED, a combined type distributed bragg reflector (DBR) structure is adopted and the problem that a traditional DBR is small in reflection angle is solved. The combined type DBR structure is composed of an upper DBR layer and a lower DBR layer, wherein the lower DBR layer is partially oxidized, difference between refractive indexes of the lower DBR layer and the upper DBR layer is increased, and reflection efficiency of light is improved. Meanwhile, cycle grain and surface roughening are simultaneously adopted and total reflection of the surface is further destroyed. The high-light AlGaInP LED improves luminous efficiency and a luminous angle of a chip and achieves improvement of luminance of the chip. Meanwhile, due to the fact that the total reflection of the surface of the chip is destroyed, the high-light AlGaInP LED reduces chances through which the light is turned into heat on the interior of the chip, lowers temperature of the chip, improves properties and reliability of devices, and is simple in craft and low in cost.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, particularly a kind of AlGaInP light-emitting diode and manufacture method thereof.
Background technology
The advantages such as light-emitting diode is little due to volume, the life-span is long, driving voltage is low become photoelectric cell indispensable in daily life already.The application of light-emitting diode is quite extensive, is broadly divided into visible light and invisible light wave band, and visible light wave range is widely used in multiple product in life at present, as mobile phone, PDA product backlight, traffic lights etc.The invisible light wave band is applied in wireless telecommunications, light source of using as remote controller, sensor, communication etc.
The material behavior of AlGaInP uniqueness is fit to the development high brightness LED very much.About the lifting of luminous efficiency, the improvement method is a lot.For example: growth GaP material improves the current expansion ability as Window layer, and its material has very large band gap, and ruddiness is arrived the green-yellow light wave band without absorption, and improves the light extraction efficiency of light-emitting diode by the surface coarsening technology; Growth can effectively promote the luminous efficiency of light-emitting diode with the light-emitting diode of Bragg mirror (Distributed Bragg Reflective, DBR) structure.The periodic structure that DBR is comprised of the different material of refractive index, every layer thickness are 1/4 medium wavelength.It can with active area downwards the light of emission reflex to the device exiting surface, thereby improve luminous efficiency, be that extension of basic device structure forms with the advantage of the LED of dbr structure, material mates with substrate lattice, reflectivity is high, does not affect the electric property of device.
As a kind of luminescent device structure with DBR just is provided in Chinese patent ZL200710187068.5, reflect the light emission rate that improves device by DBR.Yet this traditional DBR only with normal direction angle ± 5 ° scope in have higher reflectivity, for quite faint with the reflectivity of the larger light of normal direction deviation.The refractive index of GaP Window layer and air differ greatly in addition, and the angle of total reflection is too small causes a large amount of light to change into heat because of total reflection in inside.
Although the upside-down mounting AlGaInP light-emitting diode that adopts substrate transfer technology to make utilizes comprehensive metallic mirror technology (ODR) can solve the little problem of traditional DBR angle of reflection, but it is high to be faced with cost, and the low and N-type electrode of yield upwards is unfavorable for the deficiencies such as encapsulation and subsequent applications.
Summary of the invention
In order to address the above problem, the invention provides a kind of high brightness AlGaInP light-emitting diode and manufacture method thereof, produce the positive cartridge chip that a kind of brightness reaches the flip-chip level.
A kind of high brightness AlGaInP light-emitting diode, its structure is followed successively by from the bottom to top: N-type contact electrode, GaAs substrate, combined type dbr structure, N-type limiting layer, active layer, P type limiting layer, GaP Window layer, P type contact electrode, bonding wire electrode, described combined type dbr structure is comprised of upper and lower DBR layer, the material difference of two-layer DBR or material is identical but component different; Described lower DBR layer has oxide regions along the outside of chip surrounding, and the area of this oxide regions accounts for the 30-70% of the chip gross area.According to the basic general knowledge in this area, the component of saying here is namely the mole coefficient of contained element in material.
The material of described upper and lower DBR layer is chosen from AlAs/AlGaAs, AlAs/AlGaInP, AlAs/AlInP, AlAs/InGaP, AlGaAs/AlGaInP, AlGaAs/AlInP, AlGaAs/InGaP, AlGaInP/AlInP, AlGaInP/InGaP or AlInP/InGaP, and the Al component of lower DBR layer material is greater than upper DBR layer.
A preferred embodiment of the present invention is that upper and lower DBR layer material is AlGaAs/AlInP, and the difference of the Al component of lower DBR layer and upper DBR layer is more than or equal to 0.3.
Described GaP Window layer surface is through cycle veining and surface coarsening; The diameter of cycle texture graphics is the 1-5 micron, and the degree of depth is the 1.5-2 micron.
Preferred version of the present invention is that GaP Window layer surface coverage has the ITO layer.
A kind of manufacture method of high brightness AlGaInP light-emitting diode comprises the following steps:
A) provide a substrate;
B) form successively combined type dbr structure, N-type limiting layer, active layer, P type limiting layer and GaP Window layer on substrate;
C) form P type contact electrode and bonding wire electrode on the GaP Window layer;
D) utilize photoetching and wet chemical etch etching cycle texture graphics on the GaP Window layer; Etching liquid comprises the 1-5 kind in hydrochloric acid, sulfuric acid, nitric acid, hydrogen peroxide, phosphoric acid;
E) carry out surface coarsening on through the GaP Window layer after the cycle veining; Coarsening solution comprises the 1-5 kind in NaOH, potassium hydroxide, ammonium phosphate, hydrogen peroxide, clorox;
F) cover one deck ITO layer on the GaP Window layer;
G) with substrate attenuation; Substrate back after attenuate forms the N-type contact electrode;
H) substrate is carried out hemisection, depth of cut gets final product greater than epitaxial loayer;
I) remove the ITO of bonding wire electrode top;
J) test, entirely cut;
Wherein, step h) and i) also comprise oxidation step, described oxidation step is wet oxidation, and process conditions are: oxidation furnaces boiler tube flat-temperature zone temperature 400-430 ℃, and nitrogen flow 0.4-1.5 L/min, water temperature 35-95 ℃, time 20-40 minute.
The thinking that we deal with problems is: utilize the combined type dbr structure to solve the little problem of traditional DBR angle of reflection.The combined type dbr structure that adopts is by upper and lower two groups of material differences or material is identical but DBR layer that component is different forms.Wherein going up the DBR layer is used for reflecting and the light of normal direction angle in ± 5 ° of scopes; The Al constituent content of lower DBR layer material is larger than upper DBR layer, the zone that forms after oxidation and upper DBR layer have larger refringence, make the total reflection angle between them very little, will go back through the part light reflection of upper DBR layer like this, reach the purpose of blast.Due to the application of above-mentioned technology, can make the lighting angle of chip increase approximately 7 ° in addition, more be conducive to improve the brightening effect of following technique.
A general thinking that solves GaP Window layer and the problem that air refraction differs greatly, the angle of total reflection is too small is to carry out surface coarsening or at the surperficial fabrication cycle texture graphics of GaP Window layer, the mode that we adopt is that two kinds of technology are combined, at first utilize the wet etching technology at the surperficial fabrication cycle texture graphics of GaP Window layer, and then carry out the chemical corrosion alligatoring, farthest increase chip list area step of going forward side by side to destroy total reflection.
The present invention has improved light extraction efficiency and the rising angle of chip, has realized the lifting of chip brightness.Due to the total reflection that has destroyed chip surface, reduce light and change into the chance of heat at chip internal simultaneously, reduce chip temperature, improve performance of devices and reliability, and technique is simple, cost is low.
Description of drawings:
Fig. 1 light emitting diode construction figure of the present invention
Fig. 2 light-emitting diode vertical view of the present invention
Wherein:
The 100:GaAs substrate
101: lower DBR layer
102: upper DBR layer
103:N type limiting layer
104: active layer
105:P type limiting layer
The 106:GaP Window layer
The 107:ITO layer
201:P type contact electrode
202: the bonding wire electrode
203:N type contact electrode
Embodiment:
Embodiment 1:
As depicted in figs. 1 and 2, a kind of high brightness AlGaInP light-emitting diode, its structure is followed successively by from the bottom to top: N-type contact electrode, GaAs substrate, combined type dbr structure, N-type limiting layer, active layer, P type limiting layer, GaP Window layer, P type contact electrode, bonding wire electrode, ITO layer.
The upper DBR layer material of combined type dbr structure is Al
0.4Ga
0.3In
0.3P/Al
0.4In
0.6P, lower DBR layer material is Al
0.7Ga
0.3As/AlAs wherein descends the DBR layer to account for the zone of chip area 30% through peroxidating along the outside of chip surrounding; GaP Window layer surface is through cycle veining and surface coarsening, and the diameter of cycle texture graphics is 1 micron, and the degree of depth is 1.5 microns.
The manufacture method of above-mentioned high brightness AlGaInP light-emitting diode comprises the following steps:
A) provide a GaAs substrate;
B) form successively combined type dbr structure, N-type limiting layer, active layer, P type limiting layer and GaP Window layer on substrate;
C) form P type contact electrode and bonding wire electrode on the GaP Window layer;
D) utilize photoetching and wet chemical etch etching cycle texture graphics on the GaP Window layer; Etching liquid is comprised of hydrochloric acid, hydrogen peroxide;
E) carry out surface coarsening on through the GaP Window layer after the cycle veining; Coarsening solution is comprised of NaOH, hydrogen peroxide;
F) cover one deck ITO layer on the GaP Window layer;
G) with substrate attenuation; Substrate back after attenuate forms the N-type contact electrode;
H) substrate is carried out hemisection, depth of cut gets final product greater than epitaxial loayer;
I) carry out wet oxidation, process conditions are: 400 ℃ of oxidation furnaces boiler tube flat-temperature zone temperature, nitrogen flow 0.4L/min, 35 ℃ of water temperatures, 20 minutes time;
J) remove the ITO of bonding wire electrode top;
K) test, full cutting makes chip.
Embodiment 2:
As depicted in figs. 1 and 2, a kind of high brightness AlGaInP light-emitting diode, its structure is followed successively by from the bottom to top: N-type contact electrode, GaAs substrate, combined type dbr structure, N-type limiting layer, active layer, P type limiting layer, GaP Window layer, P type contact electrode, bonding wire electrode, ITO layer.
The upper DBR layer material of combined type dbr structure is Al
0.3Ga
0.7As/Al
0.3In
0.7P, lower DBR layer material is Al
0.6Ga
0.4As/Al
0.6In
0.4P wherein descends the DBR layer to account for the zone of chip area 70% through peroxidating along the outside of chip surrounding; GaP Window layer surface is through cycle veining and surface coarsening, and the diameter of cycle texture graphics is 5 microns, and the degree of depth is 2 microns.
The manufacture method of above-mentioned high brightness AlGaInP light-emitting diode comprises the following steps:
A) provide a GaAs substrate;
B) form successively combined type dbr structure, N-type limiting layer, active layer, P type limiting layer and GaP Window layer on substrate;
C) form P type contact electrode and bonding wire electrode on the GaP Window layer;
D) utilize photoetching and wet chemical etch etching cycle texture graphics on the GaP Window layer; Etching liquid is comprised of hydrochloric acid, sulfuric acid, nitric acid, hydrogen peroxide, phosphoric acid;
E) carry out surface coarsening on through the GaP Window layer after the cycle veining; Coarsening solution is comprised of NaOH, potassium hydroxide, ammonium phosphate;
F) cover one deck ITO layer on the GaP Window layer;
G) with substrate attenuation; Substrate back after attenuate forms the N-type contact electrode;
H) substrate is carried out hemisection, depth of cut gets final product greater than epitaxial loayer;
I) carry out wet oxidation, process conditions are: 430 ℃ of oxidation furnaces boiler tube flat-temperature zone temperature, nitrogen flow 1.5L/min, 95 ℃ of water temperatures, 40 minutes time;
J) remove the ITO of bonding wire electrode top;
K) test, full cutting makes chip.
Embodiment 3:
As depicted in figs. 1 and 2, a kind of high brightness AlGaInP light-emitting diode, its structure is followed successively by from the bottom to top: N-type contact electrode, GaAs substrate, combined type dbr structure, N-type limiting layer, active layer, P type limiting layer, GaP Window layer, P type contact electrode, bonding wire electrode, ITO layer.
The upper DBR layer material of combined type dbr structure is In
0.5Ga
0.5P/Al
0.1Ga
0.4In
0.5P, lower DBR layer material is Al
0.8Ga
0.2As/Al
0.8In
0.2P wherein descends the DBR layer to account for the zone of chip area 50% through peroxidating along the outside of chip surrounding; GaP Window layer surface is through cycle veining and surface coarsening, and the diameter of cycle texture graphics is 3 microns, and the degree of depth is 1.7 microns.
The manufacture method of above-mentioned high brightness AlGaInP light-emitting diode comprises the following steps:
A) provide a GaAs substrate;
B) form successively combined type dbr structure, N-type limiting layer, active layer, P type limiting layer and GaP Window layer on substrate;
C) form P type contact electrode and bonding wire electrode on the GaP Window layer;
D) utilize photoetching and wet chemical etch etching cycle texture graphics on the GaP Window layer; Etching liquid is comprised of nitric acid, hydrogen peroxide, phosphoric acid;
E) carry out surface coarsening on through the GaP Window layer after the cycle veining; Coarsening solution is comprised of NaOH, potassium hydroxide, ammonium phosphate, hydrogen peroxide, clorox;
F) cover one deck ITO layer on the GaP Window layer;
G) with substrate attenuation; Substrate back after attenuate forms the N-type contact electrode;
H) substrate is carried out hemisection, depth of cut gets final product greater than epitaxial loayer;
I) carry out wet oxidation, process conditions are: 415 ℃ of oxidation furnaces boiler tube flat-temperature zone temperature, nitrogen flow 1.0L/min, 65 ℃ of water temperatures, 35 minutes time;
J) remove the ITO of bonding wire electrode top;
K) test, full cutting makes chip.
Embodiment 4:
As depicted in figs. 1 and 2, a kind of high brightness AlGaInP light-emitting diode, its structure is followed successively by from the bottom to top: N-type contact electrode, GaAs substrate, combined type dbr structure, N-type limiting layer, active layer, P type limiting layer, GaP Window layer, P type contact electrode, bonding wire electrode, ITO layer.
The upper DBR layer material of combined type dbr structure is Al
0.3Ga
0.3In
0.4P/Al
0.3In
0.7P, lower DBR layer material is Al
0.7Ga
0.3As/AlAs wherein descends the DBR layer to account for the zone of chip area 40% through peroxidating along the outside of chip surrounding; GaP Window layer surface is through cycle veining and surface coarsening, and the diameter of cycle texture graphics is 2 microns, and the degree of depth is 1.5 microns.
The manufacture method of above-mentioned high brightness AlGaInP light-emitting diode comprises the following steps:
A) provide a GaAs substrate;
B) form successively combined type dbr structure, N-type limiting layer, active layer, P type limiting layer and GaP Window layer on substrate;
C) form P type contact electrode and bonding wire electrode on the GaP Window layer;
D) utilize photoetching and wet chemical etch etching cycle texture graphics on the GaP Window layer; Etching liquid is comprised of sulfuric acid, hydrogen peroxide, phosphoric acid;
E) carry out surface coarsening on through the GaP Window layer after the cycle veining; Coarsening solution is comprised of potassium hydroxide, ammonium phosphate, hydrogen peroxide, clorox;
F) cover one deck ITO layer on the GaP Window layer;
G) with substrate attenuation; Substrate back after attenuate forms the N-type contact electrode;
H) substrate is carried out hemisection, depth of cut gets final product greater than epitaxial loayer;
I) carry out wet oxidation, process conditions are: 420 ℃ of oxidation furnaces boiler tube flat-temperature zone temperature, nitrogen flow 0.8 L/min, 70 ℃ of water temperatures, 25 minutes time;
J) remove the ITO of bonding wire electrode top;
K) test, full cutting makes chip.
Claims (6)
1. high brightness AlGaInP light-emitting diode, its structure is followed successively by from the bottom to top: N-type contact electrode, GaAs substrate, combined type dbr structure, N-type limiting layer, active layer, P type limiting layer, GaP Window layer, P type contact electrode, bonding wire electrode, it is characterized in that described combined type dbr structure is comprised of upper and lower DBR layer, the material difference of two-layer DBR or material is identical but component different; Described lower DBR layer has oxide regions along the outside of chip surrounding, and the area of this oxide regions accounts for the 30-70% of the chip gross area.
2. light-emitting diode as claimed in claim 1, the material that it is characterized in that described upper and lower DBR layer is AlAs/ AlGaAs, AlAs/ AlGaInP, AlAs/ AlInP, AlAs/InGaP, AlGaAs/ AlGaInP, AlGaAs/ AlInP, AlGaAs/ InGaP, AlGaInP/AlInP, AlGaInP/InGaP or AlInP/InGaP, and the Al component in lower DBR layer material is greater than upper DBR layer.
3. light-emitting diode as claimed in claim 2, is characterized in that upper and lower DBR layer material is AlGaAs/ AlInP, and the difference of the Al component of lower DBR layer and upper DBR layer is more than or equal to 0.3.
4. as the described light-emitting diode of claim 1-3 any one, it is characterized in that the surface process cycle veining of GaP Window layer and surface coarsening; The diameter of cycle texture graphics is the 1-5 micron, and the degree of depth is the 1.5-2 micron.
5. light-emitting diode as claimed in claim 4, is characterized in that GaP Window layer surface coverage has the ITO layer.
6. the manufacture method of a high brightness AlGaInP light-emitting diode comprises the following steps:
One substrate is provided;
Form successively combined type dbr structure, N-type limiting layer, active layer, P type limiting layer and GaP Window layer on substrate;
Form P type contact electrode and bonding wire electrode on the GaP Window layer;
Utilize photoetching and wet chemical etch etching cycle texture graphics on the GaP Window layer; Etching liquid comprises the 1-5 kind in hydrochloric acid, sulfuric acid, nitric acid, hydrogen peroxide, phosphoric acid;
Carry out surface coarsening on through the GaP Window layer after the cycle veining; Coarsening solution comprises the 1-5 kind in NaOH, potassium hydroxide, ammonium phosphate, hydrogen peroxide, clorox;
Cover one deck ITO layer on the GaP Window layer;
With substrate attenuation; Substrate back after attenuate forms the N-type contact electrode;
Substrate is carried out hemisection, and depth of cut gets final product greater than epitaxial loayer;
Remove the ITO of bonding wire electrode top;
Test, entirely cut;
Step h) and also comprise oxidation step i) it is characterized in that:, described oxidation step is wet oxidation, and process conditions are: oxidation furnaces boiler tube flat-temperature zone temperature 400-430 ℃, and nitrogen flow 0.4-1.5 L/min, water temperature 35-95 ℃, time 20-40 minute.
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|---|---|---|---|
| CN2011103637910A CN103117349A (en) | 2011-11-17 | 2011-11-17 | High-light AlGaInP light emitting diode (LED) and manufacturing method thereof |
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|---|---|---|---|
| CN2011103637910A CN103117349A (en) | 2011-11-17 | 2011-11-17 | High-light AlGaInP light emitting diode (LED) and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104112800A (en) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | Light emitting diode using composite DBR to improve brightness and method for preparing the light emitting diode |
| CN104112805A (en) * | 2014-07-16 | 2014-10-22 | 厦门乾照光电股份有限公司 | Light-emitting diode (LED) with anti-expansion layer and manufacture method of LED |
| CN104319325A (en) * | 2014-10-29 | 2015-01-28 | 华灿光电(苏州）有限公司 | Red-yellow-light-emitting diode and preparing method thereof |
| CN105428485A (en) * | 2015-12-21 | 2016-03-23 | 扬州乾照光电有限公司 | GaP surface roughened AlGaInP-based LED and manufacturing method therefor |
| CN107112389A (en) * | 2015-01-09 | 2017-08-29 | 信越半导体株式会社 | The manufacture method of luminescence component and luminescence component |
| CN107123705A (en) * | 2017-03-17 | 2017-09-01 | 华灿光电（浙江）有限公司 | A kind of preparation method of light emitting diode |
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| CN112652685A (en) * | 2019-10-11 | 2021-04-13 | 山东华光光电子股份有限公司 | GaAs-based LED adopting DBRs of different materials to improve brightness and preparation method thereof |
| CN113314648A (en) * | 2021-05-27 | 2021-08-27 | 厦门乾照半导体科技有限公司 | LED chip and preparation method thereof |
| CN114342094A (en) * | 2021-11-22 | 2022-04-12 | 厦门市三安光电科技有限公司 | Light emitting diode, preparation method and display panel |
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| CN104112800A (en) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | Light emitting diode using composite DBR to improve brightness and method for preparing the light emitting diode |
| CN104112805A (en) * | 2014-07-16 | 2014-10-22 | 厦门乾照光电股份有限公司 | Light-emitting diode (LED) with anti-expansion layer and manufacture method of LED |
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| CN107123705A (en) * | 2017-03-17 | 2017-09-01 | 华灿光电（浙江）有限公司 | A kind of preparation method of light emitting diode |
| CN109755368A (en) * | 2019-03-12 | 2019-05-14 | 扬州乾照光电有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN112652685A (en) * | 2019-10-11 | 2021-04-13 | 山东华光光电子股份有限公司 | GaAs-based LED adopting DBRs of different materials to improve brightness and preparation method thereof |
| CN112652685B (en) * | 2019-10-11 | 2022-05-10 | 山东华光光电子股份有限公司 | GaAs-based LED adopting DBRs of different materials to improve brightness and preparation method thereof |
| CN110707192A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | High-brightness upright LED structure and manufacturing method thereof |
| CN113314648A (en) * | 2021-05-27 | 2021-08-27 | 厦门乾照半导体科技有限公司 | LED chip and preparation method thereof |
| CN114342094A (en) * | 2021-11-22 | 2022-04-12 | 厦门市三安光电科技有限公司 | Light emitting diode, preparation method and display panel |
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Application publication date: 20130522 |