CN1829014A - Cavity structure based on one-dimensional photon crystal and its preparing method - Google Patents
Cavity structure based on one-dimensional photon crystal and its preparing method Download PDFInfo
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- CN1829014A CN1829014A CN 200510011368 CN200510011368A CN1829014A CN 1829014 A CN1829014 A CN 1829014A CN 200510011368 CN200510011368 CN 200510011368 CN 200510011368 A CN200510011368 A CN 200510011368A CN 1829014 A CN1829014 A CN 1829014A
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Abstract
The present invention provides a structure and method suitable for developing GaN cavity mirror surface base on photons crystal. The present invention adopts deep etching semiconductor micro architecture to form semiconductor and air alternate variational one dimension periodicity photons crystal structure, adopting advanced write through type focusing ion beam (FIB) sub-micron microfabrication technology and simplified processing step, made out semiconductor laser resonant cavity mirror surface. Cavity mirror surface of semiconductor laser diode is made of focused ion beam lithography one dimension photons crystal. Said photons crystal is semiconductor and air alternate variational one dimension periodicity photons crystal. Another cavity mirror surface adopts nature cleavage cavity mirror surface or dry process etching prepared cavity mirror surface, or polished cavity mirror surface prepared from focused ion beam lithography.
Description
Technical field
This invention belongs to field of photoelectric technology, is specifically related to a kind of semiconductor cavity minute surface preparation method, especially a kind of chamber minute surface preparation method who can be used for the integrability of semiconductor laser diode, waveguide and integrated optical circuit thereof.Particularly can be used for solving a kind of advanced person's of minute surface preparation of GaN based laser diode chamber and integrated difficult point thereof preparation method.The present invention relates to a kind of by the semiconductor laser that has at least to form based on the chamber minute surface of the 1-D photon crystal of focused ion beam technology, and preparation method thereof.
Background technology
Semiconductor laser diode (LD) is a kind of small-sized light source of Solid State Laser easily, is widely adopted in optical communication, optical storage areas of information technology such as (VCD, DVD).It also is active device important in the optoelectronic integrated circuit.
Wavelength is that 0.4 micron GaN base royal purple ray laser diode (LD) is key device---the light source of the big Capacity Optical access technique of Information of Development sciemtifec and technical sphere DVD super-high density of future generation, can make DVD memory capacity increase to 4-5 doubly than the CD with existing ruddiness LD light source; Simultaneously, at the high definition laser printing, holographic, large screen television and full-color image show, medical diagnosis, aspects such as seabed communication also have broad application prospects.The GaN base laser has become the focus and the target product of the research and development of each major country of the present world.
Most so far and best GaN base laser (LD) all is to make with the epitaxial wafer of MOCVD growth on the sapphire of the serious mismatch of lattice.Except solving epitaxial growth, the resonant cavity minute surface is preparation vital key of LD and difficult point.But owing to the GaN sill is the reason of following aspect:
(1) with Sapphire Substrate serious lattice mismatch up to 14% is arranged, epitaxial film aufwuchsplate and substrate crystal face deflect, and are difficult to make the naturally cleaved chamber minute surface of desirable GaN;
(2) have lower refractive index, even the GaN naturally cleaved cavity minute surface of perfect crystal, its reflectivity can not satisfy the laser requirement;
(3) emission wavelength is short, and is more harsh to the requirement of chamber minute surface evenness.
Therefore the preparation difficulty of GaN base laser resonant cavity minute surface is big, is difficult to realize with the naturally cleaved method of the general simple crystal of conventional semiconductor laser.RIE (reactive ion etching) commonly used at present in the world, CAIBE (chemically assisted ion beam etching) dry etching technology of etc.ing or with methods such as cleavage behind substrate desquamation acquisition GaN based resonant cavity minute surface, on the minute surface of chamber, carry out the evaporation of multilayer film based on this again, to improve reflectivity.The common feature of said method is that technology is complicated, and preparation section is many and the cycle is long, more is difficult to realize the laser cavity minute surface in long laser of short cavity and the integrated optical circuit thereof.
Summary of the invention
At the preparation difficult point of GaN base laser resonant cavity minute surface, this invention proposes structure and the method that GaN chamber minute surface is developed in a kind of novel being suitable for based on photonic crystal.Promptly, a kind of one dimension periodicity photon crystal structure and method that is formed semiconductor and air alternate by deep etching semiconductor microactuator structure proposed, adopt advanced write-through focused ion beam (FIB) the sub-micron micro-processing technology and the processing step of simplification, produce the resonant cavity minute surface of semiconductor laser.
The 1-D photon crystal that the present invention adopts focused ion beam (FIB) fabrication techniques Prague to be combined as 3 λ/4 (air) and 5 λ/4 (GaN) is realized GaN base laser resonant cavity minute surface, be that cycle of the FIB preparation reported at present GaN Bragg grating of the shortest deep erosion is a 1-D photon crystal, still belong to the first time, so compound material is that object, fabricating technology and 1-D photon crystal Bragg reflector combination aspects all have novelty and creativeness.
The objective of the invention is to propose a kind of simple GaN based laser diode of preparation section with novel resonant cavity minute surface, and the method for preparing this semiconductor cavity minute surface.
The extension sandwich construction of semiconductor laser diode chip of the present invention is traditional " restriction respectively " structure, is formed by metal organic chemical compound vapor deposition (MOCVD) technology growth.Its luminous active layer is made up of Multiple Quantum Well, and active layer is clipped in the centre of lower waveguide layer, limiting layer and P type N type current injection layer successively.
Semiconductor laser diode of the present invention has the limit emitting structural.
Semiconductor laser diode of the present invention has positive and negative two electricity respectively and injects joining zone.
Semiconductor laser diode of the present invention, its luminous zone are strip structure.Described strip structure can be any one in following two kinds of waveguiding structures, and first kind is gain waveguide such as oxidation strip structure; Second kind is refractive index waveguide ridge waveguiding structure.The width of bar shaped is 1 to 20 micron or wideer.Produce the chip of discrete dies by the semiconductor microactuator processing technology of routine.The present invention uses the semiconductor laser of the limit emitting structural of other type, other material system too.
Semiconductor laser diode of the present invention is produced former and later two resonant cavity minute surfaces in the both ends of the surface of limit emission strip structure.The chamber minute surface that the present invention prepares semiconductor laser diode has at least one to be processed by the focused-ion-beam lithography 1-D photon crystal.Described 1-D photon crystal is: the one dimension of semiconductor and air alternate is photonic crystal periodically.
The laser diode resonant cavity of described focused ion beam preparation has three kinds, first kind of preparation method who is chamber, front and back minute surface by focused-ion-beam lithography processing 1-D photon crystal;
Second kind of preparation method is processed into the 1-D photon crystal speculum for the back cavity minute surface by focused-ion-beam lithography, and front cavity mirror keeps traditional laser diode chamber minute surface promptly to adopt preparation method naturally cleaved or dry etching chamber minute surface.
The third preparation method is processed into the 1-D photon crystal speculum for the back cavity minute surface by focused-ion-beam lithography, and the front end face resonator mirror is processed into the chamber minute surface of polishing by focused-ion-beam lithography.
The present invention obtains having the cavity resonator structure of high reflectance minute surface with the disposable repeatedly step such as the cleavage of traditional natural chamber minute surface and the evaporation of dielectric multi-layer optical thin film that replaced of advanced person's focused-ion-beam lithography technical matters.Not only obtain the minute surface of high reflectance but also simplified processing step.
Description of drawings
Below in conjunction with accompanying drawing the present invention is illustrated in further detail:
Fig. 1 has nitride based laser diode structure schematic diagram now;
The nitride based laser diode of Fig. 2 the present invention chamber minute surface schematic diagram, wherein
Fig. 2 a is that chamber, front and back minute surface is 1-D photon crystal chamber minute surface schematic diagram;
Fig. 2 b is the 1-D photon crystal speculum for the back cavity minute surface, and front cavity mirror keeps traditional laser diode chamber minute surface, promptly adopts structural representation naturally cleaved or minute surface chamber, dry etching chamber minute surface;
Fig. 2 c is the 1-D photon crystal speculum for the back cavity minute surface, and the front end face resonator mirror is processed into the structural representation of the chamber minute surface of polishing by focused-ion-beam lithography;
The gallium nitrate based chamber of Fig. 3 specular reflectivity with the wavelength change experimental measurements relatively.
The title of each Reference numeral correspondence is respectively 1-Sapphire Substrate among the figure, 2-GaN resilient coating, 3-n type GaN, 4-n type AlGaN/GaN superlattice limiting layer, 5-n type GaN ducting layer, the 6-InGaN/GaN multiple quantum well active layer, 7-p type AlGaN electronic barrier layer, 8-p type GaN ducting layer, 9-p type AlGaN/GaN superlattice limiting layer, 10-p type GaN ohmic contact layer, 11-p type Ohm contact electrode, 12-n type Ohm contact electrode, 13-cleavage minute surface, 14-1-D photon crystal chamber minute surface, 14a-1-D photon crystal front end chamber minute surface, 14b-chamber, 1-D photon crystal rear end minute surface, 15-naturally cleaved or chamber minute surface that dry etching is prepared, the front end chamber minute surface of 16-focused ion beam polishing.
Most preferred embodiment is described in detail
Below with reference to accompanying drawing of the present invention, more detailed description goes out most preferred embodiment of the present invention.
The present invention proposes a kind of simple GaN based laser diode of preparation section with novel resonant cavity minute surface, and the structure and the method that prepare this semiconductor cavity minute surface.
Be illustrated in figure 1 as existing nitride based laser diode structure schematic diagram, the extension sandwich construction of semiconductor laser diode chip of the present invention is traditional " restriction respectively " structure, is formed by metal organic chemical compound vapor deposition (MOCVD) technology growth.Its luminous active layer is made up of Multiple Quantum Well, and active layer is clipped in the centre of lower waveguide layer, limiting layer and P type N type current injection layer successively.
Semiconductor laser diode of the present invention has the limit emitting structural, and has positive and negative two electricity injection joining zones respectively.
According to semiconductor laser diode of the present invention, its luminous zone is a strip structure.Described strip structure can be any one in following two kinds of waveguiding structures commonly used, and first kind is gain waveguide structure or slab waveguide structure; Second kind is refractive index waveguiding structure or ridge waveguiding structure.Gain waveguide refers to by form dielectric or high resistance area on device, and such as the deposition layer oxide film, the marking shape window by certain width between the insulation layer is injected into laser diode with electric current.The refractive index waveguiding structure is then made a kind of ridge optical waveguide, makes electric current be injected into laser diode from ridged fillet top.The width of bar shaped is 1 to 20 micron or wideer.Produce the chip of discrete dies by the semiconductor microactuator processing technology of routine.The present invention equally also can use the semiconductor laser of the limit emitting structural of other type and material system.
Semiconductor laser diode of the present invention is produced former and later two resonant cavity minute surfaces in the both ends of the surface of limit emission strip structure.Two chamber minute surfaces have at least one to be processed by the focused-ion-beam lithography 1-D photon crystal, and described 1-D photon crystal is: the one dimension of semiconductor and air alternate is photonic crystal periodically.Thereby photonic crystal is the dielectric structure that refractive index or dielectric constant generating period variation in the wavelength dimension scope can produce photon band gap, and what only change in the one-dimensional space is 1-D photon crystal.The known multilayer dielectric film Bragg reflection of people minute surface is the example of simple 1-D photon crystal.
Be illustrated in figure 2 as the nitride based laser diode of the present invention chamber minute surface schematic diagram, the laser diode resonant cavity of described focused ion beam preparation has three kinds, first kind is that chamber, front and back minute surface is processed the 1-D photon crystal structure by focused-ion-beam lithography, and shown in Fig. 2 a, preparation method's step comprises:
1) at first develop the semiconductor laser diode of traditional bar shaped or ridge waveguide structure, comprising:
A) grow the laser diode epitaxial substrate;
B) on substrate, carry out the deposit of p electrode ohmic contact multilayer film;
C) carry out photoetching according to domain;
D) dry etching P district table top; Etching depth reaches n type district;
E) SiO
2Thin film deposition;
F) the electrode contact window is opened in the photoetching of n electrode
G) electrode multilayer film deposit can be carried out the multilayer film deposit of n electrode as required or peel off the deposit of method n electrode multilayer film;
H) alloying obtains semiconductor laser diode.
2) calculating and design have the concrete size and the tolerance requirement of semiconductor/air-distribution Prague (DBR) speculum of 1-D photon crystal structure; Wherein air (etched groove groove at once) and semi-conductive width determine that by formula m λ/4n m is odd number (1,3,5), and λ is an emission wavelength, and n is the effective refractive index of air or semiconductor laser waveguiding structure.Tolerance requires then to require with general traditional asking according to desired reflectivity.
3) focused ion beam (FIB) is carried out the etching of semiconductor/air-distribution Prague (DBR) speculum.The accelerating voltage of selective focus ion beam, generally be fixed as 30kV, the line of selective focus ion beam, be generally 1pA-300pA, utilize the figure Control Software and the operating system of focused ion beam system that the ion beam that focuses on is directly scanned groove structure to be etched at the laser end face napex, concrete etching parameters is on material to be etched with according to step 2) in calculate the etching that requires precision decide, etching depth is determined by the laser diode epitaxial structure, be advisable below reaching n district limiting layer deeply, 3-5 is individual to get final product and the cycle of bragg structure gets.
Be depicted as second kind of structural representation as Fig. 2 b, promptly the back cavity minute surface is processed into the 1-D photon crystal speculum by focused-ion-beam lithography, and front cavity mirror keeps traditional laser diode chamber minute surface promptly to adopt naturally cleaved or dry etching is prepared the chamber minute surface.Wherein the 1-D photon crystal speculum is with the step in the first method.
Be depicted as the third preparation method's chamber mirror surface structure schematic diagram as Fig. 2 c, promptly the back cavity minute surface is processed into the 1-D photon crystal speculum by focused-ion-beam lithography, and the front end face resonator mirror is processed into the chamber minute surface of polishing by focused-ion-beam lithography.Wherein the 1-D photon crystal speculum is with the step in the first method.
Principle of the present invention and good effect analysis:
Form by natural cleavage plane the resonant cavity minute surface of traditional semiconductor (as GaAs or InP sill system) edge-emitting laser.But its reflectivity depends on the refractive index of semi-conducting material, and like this, the naturally cleaved specular reflectivity limiting value of GaAs or InP base is 30%, and the GaN base only is 18%.For this reason, naturally cleaved resonant cavity minute surface is prepared in general employing earlier in traditional semiconductor edge-emitting laser preparation technology, improve the reflectivity of minute surface again by the evaporation dielectric multi-layer optical thin film, such preparation method's step is many, technology is complicated, and can only prepare discrete laser, can't realize that the light of semiconductor laser is integrated.
Thereby photonic crystal is the material with micro-structural that refractive index generating period variation in the wavelength dimension scope can produce photon band gap.Theory and experiment confirm, photonic crystal can be handled light wave becomes the noticeable structure of making novel optical element.Such as can be used for obtaining miniature high reflection mirror, micro wave guide, micro-cavity laser and filter etc.
The gallium nitrate based chamber of Fig. 3 specular reflectivity is with wavelength change experimental measurements comparison diagram, according to the photonic crystal principle, form the one dimension periodicity photonic crystal of semiconductor/air alternating structure with micro-processing technology at the end face of semiconductor laser diode, in theory, adopt limited periodicity (3-5) just can obtain reflectivity up to 90% resonant cavity minute surface.The 1-D photon crystal of our GaN/ air alternating structure that experiment showed, the deep erosion of three cycles, its reflectivity can reach 60%, is 3 times of cleavage minute surface.
Major advantage of the present invention:
The present invention obtains the resonant cavity minute surface of high reflectance with the evaporation of disposable cleavage that has replaced traditional natural chamber minute surface of advanced person's focused-ion-beam lithography technical matters and dielectric multi-layer optical thin film step repeatedly.Not only obtain the minute surface of high reflectance but also simplified processing step.Particularly:
(1) preparation method is simple.Once finish the required effect that reaches of a plurality of steps, simplified processing step;
(2) especially solved the difficult point that the resonant cavity minute surface of Grown GaN base laser is made on the Sapphire Substrate;
(3) can be used for making the integrated optical circuit of GaN base laser;
(4) design of the present invention and method are not only applicable to the GaN based laser diode, and particularly making, research and the production of the long laser diode of short cavity and integrated optical circuit thereof of the semiconductor laser diode that can be used for other various wave bands and material system.
Therefore the present invention has opened up new thinking for the research and development semiconductor laser diode, a kind of laser cavity mirror that improves has been proposed, realize the integrated simple advanced new method of processing step of light of semiconductor laser diode, can be applicable to the manufacturing of various semiconductor laser diodes, promotion has the development of the particularly following GaN base laser of the integrated optical circuit integrated optics technique of semiconductor laser light source.
Although disclose most preferred embodiment of the present invention and accompanying drawing for the purpose of illustration, it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to most preferred embodiment and the disclosed content of accompanying drawing.
Claims (9)
1. cavity configuration based on 1-D photon crystal, the both ends of the surface of semiconductor laser diode limit emission strip structure have former and later two resonant cavity minute surfaces, it is characterized in that:
Have at least one to be focused-ion-beam lithography 1-D photon crystal structure in two chamber minute surfaces;
Described 1-D photon crystal structure is: the one dimension of semiconductor and air alternate is photonic crystal periodically;
Another one chamber minute surface adopts the chamber minute surface of naturally cleaved cavity minute surface or dry etching preparation, or is processed into the chamber minute surface of polishing by focused-ion-beam lithography.
2. the cavity configuration based on 1-D photon crystal according to claim 1, it is characterized in that: described 1-D photon crystal is for only in the one-dimensional space, thereby the generating period variation in the wavelength dimension scope of refractive index or dielectric constant can produce the dielectric structure of photon band gap.
3. the cavity configuration based on 1-D photon crystal according to claim 1 is characterized in that: described semiconductor laser diode has the limit emitting structural.
4. the cavity configuration based on 1-D photon crystal according to claim 1 is characterized in that: described semiconductor laser diode has positive and negative two electricity respectively and injects joining zone.
5. the cavity configuration based on 1-D photon crystal according to claim 1 is characterized in that: described semiconductor laser diode, its luminous zone are strip structure.
6. the cavity configuration based on 1-D photon crystal according to claim 4 is characterized in that: described strip structure is a kind of in gain waveguide structure or the slab waveguide structure, perhaps a kind of in refractive index waveguiding structure or the ridge waveguiding structure.
7. the cavity configuration based on 1-D photon crystal according to claim 1, it is characterized in that: the extension sandwich construction of described semiconductor laser diode is traditional " restriction respectively " structure, its luminous active layer is made up of Multiple Quantum Well, and active layer is clipped in the centre of lower waveguide layer, limiting layer and P type N type current injection layer successively.
8. preparation method based on the cavity configuration of 1-D photon crystal specifically may further comprise the steps: at first the both ends of the surface preparation at semiconductor laser diode limit emission strip structure has former and later two resonant cavity minute surfaces;
Wherein at least one resonant cavity minute surface adopts the focused-ion-beam lithography technology, is prepared into the 1-D photon crystal structure;
Described 1-D photon crystal structure is: the one dimension of semiconductor and air alternate is photonic crystal periodically;
Another one chamber minute surface adopts naturally cleaved cavity mirror or dry etching to prepare, and perhaps adopts focused-ion-beam lithography to be processed into polishing and obtains the chamber minute surface.
9. the preparation method of the cavity configuration based on 1-D photon crystal according to claim 8 is characterized in that the concrete preparation method of 1-D photon crystal structure may further comprise the steps:
At first prepare the semiconductor laser diode of traditional bar shaped or ridge waveguide structure;
Calculate and design concrete size and the tolerance requirement that tool goes out to have the semiconductor/air-distribution Bragg mirror of 1-D photon crystal structure;
Adopt focused ion beam technology to carry out the etching of semiconductor/air-distribution Bragg mirror.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100456049C (en) * | 2007-01-26 | 2009-01-28 | 北京大学 | Method for manufacturing two-dimensional photonic crystals and photonic quasicrystalline |
| CN101527429B (en) * | 2008-03-07 | 2011-12-21 | 三菱电机株式会社 | Semiconductor laser and making method thereof |
| CN105356297A (en) * | 2015-10-30 | 2016-02-24 | 武汉电信器件有限公司 | GaN-based laser and corresponding manufacturing method |
| CN107404067A (en) * | 2017-06-29 | 2017-11-28 | 南京邮电大学 | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity |
| CN107768976A (en) * | 2017-10-23 | 2018-03-06 | 南京邮电大学 | A kind of the silicon substrate GaN waveguide laser and preparation method of integrated resonance grating microcavity |
| CN109462145A (en) * | 2017-12-28 | 2019-03-12 | 南京邮电大学 | The GaN base elevated duct laser and preparation method of integrated resonance grating microcavity |
| CN113189142A (en) * | 2021-04-28 | 2021-07-30 | 哈尔滨商业大学 | Device and method for preparing equivalent test piece for simulating defects of photovoltaic module |
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2005
- 2005-02-28 CN CN 200510011368 patent/CN1829014A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100456049C (en) * | 2007-01-26 | 2009-01-28 | 北京大学 | Method for manufacturing two-dimensional photonic crystals and photonic quasicrystalline |
| CN101527429B (en) * | 2008-03-07 | 2011-12-21 | 三菱电机株式会社 | Semiconductor laser and making method thereof |
| CN105356297A (en) * | 2015-10-30 | 2016-02-24 | 武汉电信器件有限公司 | GaN-based laser and corresponding manufacturing method |
| CN105356297B (en) * | 2015-10-30 | 2018-08-07 | 武汉电信器件有限公司 | A kind of GaN base laser and corresponding manufacturing method |
| CN107404067A (en) * | 2017-06-29 | 2017-11-28 | 南京邮电大学 | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity |
| CN107768976A (en) * | 2017-10-23 | 2018-03-06 | 南京邮电大学 | A kind of the silicon substrate GaN waveguide laser and preparation method of integrated resonance grating microcavity |
| CN109462145A (en) * | 2017-12-28 | 2019-03-12 | 南京邮电大学 | The GaN base elevated duct laser and preparation method of integrated resonance grating microcavity |
| CN113189142A (en) * | 2021-04-28 | 2021-07-30 | 哈尔滨商业大学 | Device and method for preparing equivalent test piece for simulating defects of photovoltaic module |
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